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Additive engineering for Sb$_2$S$_3$ indoor photovoltaics with efficiency exceeding 17%
Authors:
Xiao Chen,
Xiaoxuan Shu,
Jiangcheng Zhou,
Lei Wan,
Peng Xiao,
Yuchen Fu,
Junzhi Ye,
Yi-Teng Huang,
Bin Yan,
Dingjiang Xue,
Tao Chen,
Jiejie Chen,
Robert L. Z. Hoye,
Ru Zhou
Abstract:
Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-qualit…
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Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-quality absorber films. Additive engineering is an effective strategy to improved the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb$_2$S$_3$ films to be controlled, enabling the deposition of high-quality Sb$_2$S$_3$ absorbers with reduced grain boundary density, optimized band positions and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb$_2$S$_3$ films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb$_2$S$_3$ absorber films, the MEA-modulated Sb$_2$S$_3$ solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb$_2$S$_3$ IPVs. Furthermore, we construct high performance large-area Sb$_2$S$_3$ IPV modules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb$_2$S$_3$ photovoltaics for indoor energy harvesting.
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Submitted 10 June, 2024;
originally announced June 2024.
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Magnetic asymmetry induced anomalous spin-orbit torque in IrMn
Authors:
**g Zhou,
Xinyu Shu,
Yaohua Liu,
Xiao Wang,
Weinan Lin,
Shaohai Chen,
Liang Liu,
Qidong Xie,
Tao Hong,
** Yang,
Bingbai Yan,
Xiufeng Han,
**gsheng Chen
Abstract:
We demonstrate an anomalous spin-orbit torque induced by the broken magnetic symmetry in the antiferromagnet IrMn. We study the magnetic structure of three phases of IrMn thin films using neutron diffraction technique. The magnetic mirror symmetry M' is broken laterally in both L10-IrMn and L12-IrMn3 but not γ-IrMn3. We observe an out-of-plane dam**-like spin-orbit torque in both L10-IrMn/permal…
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We demonstrate an anomalous spin-orbit torque induced by the broken magnetic symmetry in the antiferromagnet IrMn. We study the magnetic structure of three phases of IrMn thin films using neutron diffraction technique. The magnetic mirror symmetry M' is broken laterally in both L10-IrMn and L12-IrMn3 but not γ-IrMn3. We observe an out-of-plane dam**-like spin-orbit torque in both L10-IrMn/permalloy and L12-IrMn3/permalloy bilayers but not in γ-IrMn3/permalloy. This is consistent with both the symmetry analysis on the effects of a broken M' on spin-orbit torque and the theoretical predictions of the spin Hall effect and the Rashba-Edelstein effect. In addition, the measured spin-orbit torque efficiencies are 0.61+-0.01, 1.01+-0.03 and 0.80+-0.01 for the L10, L12 and γ phases, respectively. Our work highlights the critical roles of the magnetic asymmetry in spin-orbit torque generation.
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Submitted 1 July, 2020;
originally announced July 2020.
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Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface
Authors:
Weinan Lin,
Baishun Yang,
Andy Paul Chen,
Xiaohan Wu,
Rui Guo,
Shaohai Chen,
Liang Liu,
Qidong Xie,
Xinyu Shu,
Yajuan Hui,
Gan Moog Chow,
Yuan** Feng,
Giovanni Carlotti,
Silvia Tacchi,
Hongxin Yang,
**gsheng Chen
Abstract:
We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish the dominant role of the oxide termination (TiO2 vs BaO), from the moderate effec…
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We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish the dominant role of the oxide termination (TiO2 vs BaO), from the moderate effect of ferroelectric polarization in the BTO film, on the PMA and DMI at the oxide/FM interface. We find that the interfacial magnetic anisotropy energy of the BaO-BTO/CoFeB structure is two times larger than that of the TiO2-BTO/CoFeB, while the DMI of the TiO2-BTO/CoFeB interface is larger. We explain the observed phenomena by first-principles calculations, which ascribe them to the different electronic states around the Fermi level at the oxide/ferromagnetic metal interfaces and the different spin-flip processes. This study paves the way for further investigation of the PMA and DMI at various oxide/FM structures and thus their applications in the promising field of energy-efficient devices.
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Submitted 25 June, 2020;
originally announced June 2020.
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Giant spin-orbit splitting in a HgTe quantum well
Authors:
Y. S. Gui,
C. R. Becker,
N. Dai,
J. Liu,
Z. J. Qiu,
E. G. Novik,
M. Schaefer,
X. Z. Shu,
J. H. Chu,
H. Buhmann,
L. W. Molenkamp
Abstract:
We have investigated beating patterns in Shubnikov-de Haas oscillations for HgTe/Hg_{0.3}Cd_{0.7}Te(001) quantum wells with electron densities of 2 to 3 X 10^{12} cm^{-2}. Up to 12 beating nodes have been observed at magnetic fields between 0.9 and 6 T. Zero magnetic field spin-orbit splitting energies up to 30 meV have been directly determined from the node positions as well as from the interse…
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We have investigated beating patterns in Shubnikov-de Haas oscillations for HgTe/Hg_{0.3}Cd_{0.7}Te(001) quantum wells with electron densities of 2 to 3 X 10^{12} cm^{-2}. Up to 12 beating nodes have been observed at magnetic fields between 0.9 and 6 T. Zero magnetic field spin-orbit splitting energies up to 30 meV have been directly determined from the node positions as well as from the intersection of self-consistently calculated Landau levels. These values, which exceed the thermal broadening of Landau levels, k_B T, at room temperature, are in good agreement with Rashba spin-orbit splitting energies calculated by means of an 8 X 8 kp Kane model. The experimental Shubnikov-de Haas oscillations are also in good agreement with numerical simulations based on this model.
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Submitted 22 June, 2004;
originally announced June 2004.
