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Algebraic non-Hermitian skin effect and unified non-Bloch band theory in arbitrary dimensions
Authors:
Kai Zhang,
Chang Shu,
Kai Sun
Abstract:
The non-Hermitian skin effect, characterized by a proliferation of exponentially-localized edge modes, has led to numerous novel physical phenomena that challenge the limits of conventional band theory. In sharp contrast to the traditional exponential localization, this manuscript reports a new kind of non-Hermitian skin effect, which we term the ``algebraic non-Hermitian skin effect." This effect…
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The non-Hermitian skin effect, characterized by a proliferation of exponentially-localized edge modes, has led to numerous novel physical phenomena that challenge the limits of conventional band theory. In sharp contrast to the traditional exponential localization, this manuscript reports a new kind of non-Hermitian skin effect, which we term the ``algebraic non-Hermitian skin effect." This effect emerges across a diverse spectrum of non-Hermitian systems in both two- and higher space dimensions. For 2D systems with algebraic non-Hermitian skin effect, on geometries such as a torus or cylinder, these systems exhibit behavior reminiscent of the conventional non-Hermitian skin effect, where eigenmodes are either bulk Bloch waves (on a torus) or exponentially localized edge modes (on a cylinder). However, if the same system is placed on a disk or any geometrical shape featuring open boundaries in all directions, the skin modes immediately transform into the algebraic form, with amplitude decaying as a power-law function of the distance from the boundary. To explore these novel effects, we formulate a unified generalized Brillouin zone (GBZ) framework that is universally applicable to all variations of non-Hermitian skin effects across any spatial dimension, developed through the usage of a generalized transfer-matrix approach. We find that in a $d$-dimensional non-Hermitian system, in general, the GBZ manifold's dimensionality must fall into the range from $d$ to $2d-1$, denoted by ${d \leq \dim\text{GBZ} \leq 2d-1}$. In 1D, this inequality is trivial because the upper and lower bounds converge, forcing the GBZ's dimensionality to match with that of the physical space. However, in 2D and above, this inequality indicates that there is no obligation for the GBZ's dimensionality to concur with the physical space's dimensionality, which gives rise to a new class of non-Hermitian skin effects.
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Submitted 10 June, 2024;
originally announced June 2024.
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Universal spectral moment theorem and its applications in non-Hermitian systems
Authors:
Nan Cheng,
Chang Shu,
Kai Zhang,
Xiaoming Mao,
Kai Sun
Abstract:
The high sensitivity of the spectrum and wavefunctions to boundary conditions, termed the non-Hermitian skin effect, represents a fundamental aspect of non-Hermitian systems. While it endows non-Hermitian systems with unprecedented physical properties, it presents notable obstacles in gras** universal properties that are robust against microscopic details and boundary conditions. In this Letter,…
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The high sensitivity of the spectrum and wavefunctions to boundary conditions, termed the non-Hermitian skin effect, represents a fundamental aspect of non-Hermitian systems. While it endows non-Hermitian systems with unprecedented physical properties, it presents notable obstacles in gras** universal properties that are robust against microscopic details and boundary conditions. In this Letter, we introduce a pivotal theorem: in the thermodynamic limit, for any non-Hermitian systems with finite-range interactions, all spectral moments are invariant quantities, independent of boundary conditions, posing strong constraints on the spectrum. Utilizing this invariance, we propose a new criterion for bulk dynamical phases based on experimentally observable features and applicable to any dimensions and any boundary conditions. Based on this criterion, we define the bulk dispersive-to-proliferative phase transition, which is distinct from the real-to-complex spectral transition and contrary to traditional expectations. We verify these findings in 1D and 2D lattice models.
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Submitted 15 May, 2024; v1 submitted 3 March, 2024;
originally announced March 2024.
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Radical-Induced Changes in Transition Metal Interfacial Magnetic Properties: A Blatter Derivative on Polycrystalline Cobalt
Authors:
Ewa Malgorzata Nowik-Boltyk,
Tobias Junghoefer,
Erika Giangrisostomi,
Ruslan Ovsyannikov,
Chan Shu,
Andrzej Rajca,
Andrea Droghetti,
M. Benedetta Casu
Abstract:
In this work, we study the cobalt radical interface obtained by depositing a monolayer of a derivative of the Blatter radical on polycrystalline cobalt. By examining the occupied and unoccupied states at the interface, using soft X-ray techniques, and combining them with ab initio calculations, we can completely determine the electronic structure at the interface, simultaneously, on both the molec…
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In this work, we study the cobalt radical interface obtained by depositing a monolayer of a derivative of the Blatter radical on polycrystalline cobalt. By examining the occupied and unoccupied states at the interface, using soft X-ray techniques, and combining them with ab initio calculations, we can completely determine the electronic structure at the interface, simultaneously, on both the molecular and ferromagnetic sides, and thus obtain a full understanding of the magnetic properties at the interface. We find that the molecule is strongly hybridized with the surface. Changes in the core level spectra reflect the modification of the molecule and cobalt electronic structure induced by the bonding across the interface. This causes a decrease in the magnetic moments of the cobalt atoms bonded to the molecules that lose their radical character. Our method allows screening, beforehand, the organic ferromagnetic interfaces in view of potential applications in spintronic.
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Submitted 14 February, 2024;
originally announced February 2024.
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Exploring Intrinsic Magnetic Topological Insulators: The Case of EuIn$_2$As$_2$
Authors:
Hao Liu,
Qi-Yi Wu,
Chen Zhang,
Jie Pang,
Bo Chen,
Jiao-Jiao Song,
Yu-Xia Duan,
Ya-Hua Yuan,
Hai-Yun Liu,
Chuan-Cun Shu,
Yuan-Feng Xu,
You-Guo Shi,
Jian-Qiao Meng
Abstract:
In this study, ultrafast optical spectroscopy was employed to elucidate the intricate topological features of EuIn$_2$As$_2$, a promising candidate for a magnetic topological-crystalline axion insulator. Our investigation, focusing on the real-time evolution of topological states, unveiled a narrow surface magnetic gap (2$Δ_0$ $\simeq$ 8.2 meV)) emerging at the antiferromagnetic transition tempera…
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In this study, ultrafast optical spectroscopy was employed to elucidate the intricate topological features of EuIn$_2$As$_2$, a promising candidate for a magnetic topological-crystalline axion insulator. Our investigation, focusing on the real-time evolution of topological states, unveiled a narrow surface magnetic gap (2$Δ_0$ $\simeq$ 8.2 meV)) emerging at the antiferromagnetic transition temperature ($T_N$ $\approx$ 16 K). Below $T_N$, two extremely low-energy collective modes, $ω_1$ and $ω_2$, with frequencies of $\sim$9.9 and 21.6 GHz at $T$ = 4 K, respectively, were observed, exhibiting strong temperature dependence. $ω_1$ correlates with an acoustic phonon, while $ω_2$ is associated with a magnon. The results suggest that EuIn$_2$As$_2$ has the potential to manifest a magnetic topological-crystalline axion insulator, presenting a small magnetic energy gap on the (001) surface. The findings further our understanding of the interplay between magnetism and topology in this material, showcasing its potential for applications in quantum information processing and spintronics.
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Submitted 20 January, 2024;
originally announced January 2024.
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Loss-induced universal one-way transport in periodically driven systems
Authors:
Chang Shu,
Kai Zhang,
Kai Sun
Abstract:
In this paper, we show that a periodically driven Aubry-André-Harper model with imbalanced on-site gain/loss supports universal one-way transport that is immune to impurities and independent of initial excitations. We reveal the underlying mechanism that the periodic driving gives rise to the non-Hermitian skin effect in the effective Floquet Hamiltonian, thereby causing universal non-reciprocal t…
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In this paper, we show that a periodically driven Aubry-André-Harper model with imbalanced on-site gain/loss supports universal one-way transport that is immune to impurities and independent of initial excitations. We reveal the underlying mechanism that the periodic driving gives rise to the non-Hermitian skin effect in the effective Floquet Hamiltonian, thereby causing universal non-reciprocal transport. Additionally, we probe the time-average decay rate of the propagator under long-time bulk dynamics as a signature of the Floquet emergent non-Hermitian skin effect. Our results provide a feasible and controllable way to realize universal one-way transport that is easily accessible to experiments.
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Submitted 9 May, 2024; v1 submitted 16 June, 2023;
originally announced June 2023.
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Collective Spin-Light and Light-Mediated Spin-Spin Interactions in an Optical Cavity
Authors:
Zeyang Li,
Boris Braverman,
Simone Colombo,
Chi Shu,
Akio Kawasaki,
Albert Adiyatullin,
Edwin Pedrozo-Peñafiel,
Enrique Mendez,
Vladan Vuletić
Abstract:
The interaction between an atomic ensemble and a light mode in a high-finesse optical cavity can easily reach the strong-coupling regime, where quantum effects dominate. In this regime, the interaction can be used to generate both atom-light and atom-atom entanglement. We analyze the dominant effects on the collective atomic state and the light field, and derive a unified approach that can account…
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The interaction between an atomic ensemble and a light mode in a high-finesse optical cavity can easily reach the strong-coupling regime, where quantum effects dominate. In this regime, the interaction can be used to generate both atom-light and atom-atom entanglement. We analyze the dominant effects on the collective atomic state and the light field, and derive a unified approach that can account for atomic entanglement induced both by measurements on the light field, and by ignoring the state of the light field altogether. We present analytical expressions for the entanglement induced by the interaction, and determine the conditions that maximize the entanglement-induced gain over the standard quantum limit in quantum sensors and atomic clocks.
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Submitted 25 March, 2022; v1 submitted 22 June, 2021;
originally announced June 2021.
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Synthesis and Thin Films of Thermally Robust Quartet (S = 3/2) Ground State Triradical
Authors:
Chan Shu,
Maren Pink,
Tobias Junghoefer,
Elke Nadler,
Suchada Rajca,
Maria Benedetta Casu,
Andrzej Rajca
Abstract:
High spin (S=3/2) organic triradicals may offer enhanced properties with respect to several emerging technologies, but those synthesized to date typically exhibit small doublet quartet energy gaps and/or possess limited thermal stability and processability. We report a quartet ground state triradical 3, synthesized by a Pd(0)-catalyzed radical-radical cross-coupling reaction, which possesses two d…
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High spin (S=3/2) organic triradicals may offer enhanced properties with respect to several emerging technologies, but those synthesized to date typically exhibit small doublet quartet energy gaps and/or possess limited thermal stability and processability. We report a quartet ground state triradical 3, synthesized by a Pd(0)-catalyzed radical-radical cross-coupling reaction, which possesses two doublet-quartet energy gaps, DeltaEDQ ~ 0.2-0.3 kcal mol-1 and DealtaEDQ2 ~ 1.2-1.8 kcal mol-1. The triradical has a 70+% population of the quartet ground state at room temperature, and good thermal stability with onset of decomposition at > 160 °C under inert atmosphere. Magnetic properties of 3 are characterized by SQUID magnetometry in polystyrene glass and by quantitative EPR spectroscopy. Triradical 3 is evaporated under ultra-high vacuum to form thin films of intact triradicals on silicon substrate, as confirmed by high resolution X-ray photoelectron spectroscopy. AFM and SEM images of the around 1 nm thick films indicate that the triradical molecules form islands on the substrate. The films are stable under ultra-high vacuum for at least 17 h but show onset of decomposition after 4 h at ambient conditions. The drop-cast films are less prone to degradation in air and have longer lifetime.
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Submitted 23 March, 2021;
originally announced March 2021.
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Well-balanced finite volume schemes for hydrodynamic equations with general free energy
Authors:
José A. Carrillo,
Serafim Kalliadasis,
Sergio P. Perez,
Chi-Wang Shu
Abstract:
Well balanced and free energy dissipative first- and second-order accurate finite volume schemes are proposed for a general class of hydrodynamic systems with linear and nonlinear dam**. The natural Liapunov functional of the system, given by its free energy, allows for a characterization of the stationary states by its variation. An analog property at the discrete level enables us to preserve s…
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Well balanced and free energy dissipative first- and second-order accurate finite volume schemes are proposed for a general class of hydrodynamic systems with linear and nonlinear dam**. The natural Liapunov functional of the system, given by its free energy, allows for a characterization of the stationary states by its variation. An analog property at the discrete level enables us to preserve stationary states at machine precision while kee** the dissipation of the discrete free energy. These schemes allow for analysing accurately the stability properties of stationary states in challeging problems such as: phase transitions in collective behavior, generalized Euler-Poisson systems in chemotaxis and astrophysics, and models in dynamic density functional theories; having done a careful validation in a battery of relevant test cases.
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Submitted 4 November, 2020; v1 submitted 3 December, 2018;
originally announced December 2018.
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Atomically thin mirrors made of monolayer semiconductors
Authors:
Giovanni Scuri,
You Zhou,
Alexander A. High,
Dominik S. Wild,
Chi Shu,
Kristiaan De Greve,
Luis A. Jauregui,
Takashi Taniguchi,
Kenji Watanabe,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
Transition metal dichalcogenide monolayers are promising candidates for exploring new electronic and optical phenomena and for realizing atomically thin optoelectronic devices. They host tightly bound electron-hole pairs (excitons) that can be efficiently excited by resonant light fields. Here, we demonstrate that a single monolayer of molybdenum diselenide (MoSe2) can dramatically modify light tr…
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Transition metal dichalcogenide monolayers are promising candidates for exploring new electronic and optical phenomena and for realizing atomically thin optoelectronic devices. They host tightly bound electron-hole pairs (excitons) that can be efficiently excited by resonant light fields. Here, we demonstrate that a single monolayer of molybdenum diselenide (MoSe2) can dramatically modify light transmission near the excitonic resonance, acting as an electrically switchable mirror that reflects up to 85% of incident light at cryogenic temperatures. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor, encapsulated by hexagonal boron nitride. Furthermore, we show that the MoSe2 monolayer exhibits power- and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used. These observations open up new possibilities for studying quantum nonlinear optical phenomena and topological photonics, and for miniaturizing optical devices.
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Submitted 19 May, 2017;
originally announced May 2017.
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Probing dark excitons in atomically thin semiconductors via near-field coupling to surface plasmon polaritons
Authors:
You Zhou,
Giovanni Scuri,
Dominik S. Wild,
Alexander A. High,
Alan Dibos,
Luis A. Jauregui,
Chi Shu,
Kristiaan de Greve,
Kateryna Pistunova,
Andrew Joe,
Takashi Taniguchi,
Kenji Watanabe,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
Transition metal dichalcogenide (TMD) monolayers are direct bandgap semiconductors that feature tightly bound excitons, strong spin-orbit coupling, and spin-valley degrees of freedom. Depending on the spin configuration of the electron-hole pairs, intra-valley excitons of TMD monolayers can be either optically bright or dark. Dark excitons involve nominally spin-forbidden optical transitions with…
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Transition metal dichalcogenide (TMD) monolayers are direct bandgap semiconductors that feature tightly bound excitons, strong spin-orbit coupling, and spin-valley degrees of freedom. Depending on the spin configuration of the electron-hole pairs, intra-valley excitons of TMD monolayers can be either optically bright or dark. Dark excitons involve nominally spin-forbidden optical transitions with zero in-plane transition dipole moment, making their detection with conventional far-field optical techniques challenging. Here, we introduce a new method for probing the optical properties of two-dimensional (2D) materials via near-field coupling to surface plasmon polaritons (SPPs), which selectively enhances optical transitions with dipole moments normal to the 2D plane. We utilize this method to directly detect dark excitons in monolayer TMDs. When a WSe2 monolayer is placed on top of a single-crystal silver film, its emission into near-field-coupled SPPs displays new spectral features whose energies and dipole orientations are consistent with dark neutral and charged excitons. The SPP-based near-field spectroscopy significantly enhances experimental capabilities for probing and manipulating exciton dynamics of atomically thin materials.
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Submitted 20 January, 2017;
originally announced January 2017.
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Discontinuous Galerkin Deterministic Solvers for a Boltzmann-Poisson Model of Hot Electron Transport by Averaged Empirical Pseudopotential Band Structures
Authors:
Jose Morales-Escalante,
Irene M. Gamba,
Yingda Cheng,
Armando Majorana,
Chi-Wang Shu,
James Chelikowsky
Abstract:
The purpose of this work is to incorporate numerically, in a discontinuous Galerkin (DG) solver of a Boltzmann-Poisson model for hot electron transport, an electronic conduction band whose values are obtained by the spherical averaging of the full band structure given by a local empirical pseudopotential method (EPM) around a local minimum of the conduction band for silicon, as a midpoint between…
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The purpose of this work is to incorporate numerically, in a discontinuous Galerkin (DG) solver of a Boltzmann-Poisson model for hot electron transport, an electronic conduction band whose values are obtained by the spherical averaging of the full band structure given by a local empirical pseudopotential method (EPM) around a local minimum of the conduction band for silicon, as a midpoint between a radial band model and an anisotropic full band, in order to provide a more accurate physical description of the electron group velocity and conduction energy band structure in a semiconductor. This gives a better quantitative description of the transport and collision phenomena that fundamentally define the behaviour of the Boltzmann - Poisson model for electron transport used in this work. The numerical values of the derivatives of this conduction energy band, needed for the description of the electron group velocity, are obtained by means of a cubic spline interpolation. The EPM-Boltzmann-Poisson transport with this spherically averaged EPM calculated energy surface is numerically simulated and compared to the output of traditional analytic band models such as the parabolic and Kane bands, numerically implemented too, for the case of 1D $n^+-n-n^+$ silicon diodes with 400nm and 50nm channels. Quantitative differences are observed in the kinetic moments related to the conduction energy band used, such as mean velocity, average energy, and electric current (momentum).
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Submitted 17 January, 2018; v1 submitted 16 December, 2015;
originally announced December 2015.
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Holonomic quantum control with continuous variable systems
Authors:
Victor V. Albert,
Chi Shu,
Stefan Krastanov,
Chao Shen,
Ren-Bao Liu,
Zhen-Biao Yang,
Robert J. Schoelkopf,
Mazyar Mirrahimi,
Michel H. Devoret,
Liang Jiang
Abstract:
Universal computation of a quantum system consisting of superpositions of well-separated coherent states of multiple harmonic oscillators can be achieved by three families of adiabatic holonomic gates. The first gate consists of moving a coherent state around a closed path in phase space, resulting in a relative Berry phase between that state and the other states. The second gate consists of "coll…
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Universal computation of a quantum system consisting of superpositions of well-separated coherent states of multiple harmonic oscillators can be achieved by three families of adiabatic holonomic gates. The first gate consists of moving a coherent state around a closed path in phase space, resulting in a relative Berry phase between that state and the other states. The second gate consists of "colliding" two coherent states of the same oscillator, resulting in coherent population transfer between them. The third gate is an effective controlled-phase gate on coherent states of two different oscillators. Such gates should be realizable via reservoir engineering of systems which support tunable nonlinearities, such as trapped ions and circuit QED.
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Submitted 30 March, 2016; v1 submitted 28 February, 2015;
originally announced March 2015.
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A fast approach to Discontinuous Galerkin solvers for Boltzmann-Poisson transport systems for full electronic bands and phonon scattering
Authors:
Irene M. Gamba,
Armando Majorana,
Jose A. Morales,
Chi-Wang Shu
Abstract:
The present work is motivated by the development of a fast DG based deterministic solver for the extension of the BTE to a system of transport Boltzmann equations for full electronic multi-band transport with intra-band scattering mechanisms. Our proposed method allows to find scattering effects of high complexity, such as anisotropic electronic bands or full band computations, by simply using the…
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The present work is motivated by the development of a fast DG based deterministic solver for the extension of the BTE to a system of transport Boltzmann equations for full electronic multi-band transport with intra-band scattering mechanisms. Our proposed method allows to find scattering effects of high complexity, such as anisotropic electronic bands or full band computations, by simply using the standard routines of a suitable Monte Carlo approach only once. In this short paper, we restrict our presentation to the single band problem as it will be also valid in the multi-band system as well. We present preliminary numerical tests of this method using the Kane energy band model, for a 1-D 400nm $n^{+}-n-n^{+}$ silicon channel diode, showing moments at $t=0.5$ps and $t=3.0$ps.
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Submitted 24 November, 2014;
originally announced November 2014.
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Investigation of Gd3N@C2n (40 < n < 44) family by Raman and inelastic electron tunneling spectroscopy
Authors:
Brian G. Burke,
Jack Chan,
Keith A. Williams,
Jiechao Ge,
Chunying Shu,
Wujun Fu,
Harry C. Dorn,
James G. Kushmerick,
Alexander A. Puretzky,
David B. Geohegan
Abstract:
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational mod…
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The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational modes involving the movement of the encapsulated species are a fingerprint of the interaction between the fullerene cage and the core complex. We present Raman data for the Gd3N@C2n (40 < n < 44) family as well as Y3N@C80, Lu3N@C80, and Y3N@C88 for comparison. Conductance measurements have been performed on Gd3N@C80 and reveal a Kondo effect similar to that observed in C60.
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Submitted 27 October, 2009;
originally announced October 2009.
