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Quantum master equation for many-body systems: Derivation based on the Lieb-Robinson bound
Authors:
Koki Shiraishi,
Masaya Nakagawa,
Takashi Mori,
Masahito Ueda
Abstract:
The local Gorini-Kossakowski-Sudarshan-Lindblad (GKSL) quantum master equation is a powerful tool for the study of open quantum many-body systems. However, its microscopic derivation applicable to many-body systems is available only in limited cases of weak internal couplings, and it has yet to be fully understood under what microscopic conditions the local GKSL equation is valid. We derive the lo…
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The local Gorini-Kossakowski-Sudarshan-Lindblad (GKSL) quantum master equation is a powerful tool for the study of open quantum many-body systems. However, its microscopic derivation applicable to many-body systems is available only in limited cases of weak internal couplings, and it has yet to be fully understood under what microscopic conditions the local GKSL equation is valid. We derive the local GKSL equation on the basis of the Lieb-Robinson bound, which provides an upper bound of the propagation of information in quantum many-body systems. We numerically test the validity of the derived local GKSL equation for a one-dimensional tight-binding fermion chain.
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Submitted 22 April, 2024;
originally announced April 2024.
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First-Principles Study of Recombination-Enhanced Migration of an Interstitial Magnesium in Gallium Nitride
Authors:
Yuansheng Zhao,
Kenji Shiraishi,
Tetsuo Narita,
Atsushi Oshiyama
Abstract:
The stable and metastable configurations of interstitial Mg in GaN and its migration energy barriers are studied from first-principles calculations. In addition to the conventional octahedral (O, global energy minimum) and tetrahedral (T, metastable) interstitial sites, we discover two new metastable interstitial complexes with formation energy lower than or close to that of T configuration but hi…
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The stable and metastable configurations of interstitial Mg in GaN and its migration energy barriers are studied from first-principles calculations. In addition to the conventional octahedral (O, global energy minimum) and tetrahedral (T, metastable) interstitial sites, we discover two new metastable interstitial complexes with formation energy lower than or close to that of T configuration but higher than O. Except for Mg at O site which only has +2 charge state, all other configurations also permit charge states +1 or 0. The minimum migration energy barrier for Mg$^{++}$ between O sites is found to be 1.95 eV. We further find that, when Fermi energy is close to the conduction band, the migration between O sites via metastable configurations occur through a recombination-enhanced mechanism in which the charge state changes from +2 at O site to 0 at metastable sites by consecutive capture of two electrons during the migration. This process greatly reduces the migration energy barrier to as low as 1.47 eV. This value is consistent with experiments, and we also discuss the role of intrinsic defects in the migration of Mg.
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Submitted 2 May, 2024; v1 submitted 9 February, 2024;
originally announced February 2024.
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Particle pinning as a method to manipulate marginal stability
Authors:
Kumpei Shiraishi,
Yusuke Hara
Abstract:
We study the critical behavior of low-frequency vibrations of packings with pinned particles near the jamming point. Soft modes form a plateau in the density of states and its frequency is controlled by the contact number as the ordinary jamming transition. The spatial structure of these modes is not largely affected by pins. Below the plateau, the non-Debye scaling predicted by mean-field theorie…
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We study the critical behavior of low-frequency vibrations of packings with pinned particles near the jamming point. Soft modes form a plateau in the density of states and its frequency is controlled by the contact number as the ordinary jamming transition. The spatial structure of these modes is not largely affected by pins. Below the plateau, the non-Debye scaling predicted by mean-field theories and quasi-localized modes breaks down depending on the pinning procedures. We comprehensively explain these behaviors by the impact of pinning operations on the marginal stability of the packings.
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Submitted 8 November, 2023; v1 submitted 3 October, 2023;
originally announced October 2023.
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Non-phononic density of states of two-dimensional glasses revealed by random pinning
Authors:
Kumpei Shiraishi,
Hideyuki Mizuno,
Atsushi Ikeda
Abstract:
The vibrational density of states of glasses is considerably different from that of crystals. In particular, there exist spatially localized vibrational modes in glasses. The density of states of these non-phononic modes has been observed to follow $g(ω) \propto ω^4$, where $ω$ is the frequency. However, in two-dimensional systems, the abundance of phonons makes it difficult to accurately determin…
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The vibrational density of states of glasses is considerably different from that of crystals. In particular, there exist spatially localized vibrational modes in glasses. The density of states of these non-phononic modes has been observed to follow $g(ω) \propto ω^4$, where $ω$ is the frequency. However, in two-dimensional systems, the abundance of phonons makes it difficult to accurately determine this non-phononic density of states because they are strongly coupled to non-phononic modes and yield strong system-size and preparation-protocol dependencies. In this article, we utilize the random pinning method to suppress phonons and disentangle their coupling with non-phononic modes and successfully calculate their density of states as $g(ω) \propto ω^4$. We also study their localization properties and confirm that low-frequency non-phononic modes in pinned systems are truly localized without far-field contributions. We finally discuss the excess density of states over the Debye value that results from the hybridization of phonons and non-phononic modes.
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Submitted 15 January, 2023;
originally announced January 2023.
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Beyond ab initio reaction simulator: an application to GaN metalorganic vapor phase epitaxy
Authors:
Akira Kusaba,
Shugo Nitta,
Kenji Shiraishi,
Tetsuji Kuboyama,
Yoshihiro Kangawa
Abstract:
To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass spectrometry (TOF-MS) data applied to GaN metalorganic vapor phase epitaxy system. Incorporating ab initio knowledge into the optimization successfully reproduces not only the concentration of CH$_4$ (an impurity precursor) as an objective variable but also known reaction pathway…
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To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass spectrometry (TOF-MS) data applied to GaN metalorganic vapor phase epitaxy system. Incorporating ab initio knowledge into the optimization successfully reproduces not only the concentration of CH$_4$ (an impurity precursor) as an objective variable but also known reaction pathways. The simulation results show significant production of GaH$_3$, a precursor of GaN, which has been difficult to detect in TOF-MS experiments. Our proposed approach is expected to be applicable to other applied physics fields that require quantitative prediction that goes beyond ab initio reaction rates.
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Submitted 21 October, 2022;
originally announced October 2022.
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Johari-Goldstein $β$ relaxation in glassy dynamics originates from two-scale energy landscape
Authors:
Kumpei Shiraishi,
Hideyuki Mizuno,
Atsushi Ikeda
Abstract:
Supercooled liquids undergo complicated structural relaxation processes, which have been a long-standing problem in both experimental and theoretical aspects of condensed matter physics. In particular, past experiments universally observed for many types of molecular liquids that relaxation dynamics separated into two distinct processes at low temperatures. One of the possible interpretations is t…
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Supercooled liquids undergo complicated structural relaxation processes, which have been a long-standing problem in both experimental and theoretical aspects of condensed matter physics. In particular, past experiments universally observed for many types of molecular liquids that relaxation dynamics separated into two distinct processes at low temperatures. One of the possible interpretations is that this separation originates from the two-scale hierarchical topography of the potential energy landscape; however, it has never been verified. Molecular dynamics simulations are a promising approach to tackle this issue, but we must overcome laborious difficulties. First, we must handle a model of molecular liquids that is computationally demanding compared to simple spherical models, which have been intensively studied but show only a slower process: $α$ relaxation. Second, we must reach a sufficiently low-temperature regime where the two processes become well separated. Here, we handle an asymmetric dimer system that exhibits a faster process: Johari-Goldstein $β$ relaxation. Then, we employ the parallel tempering method to access the low-temperature regime. These laborious efforts enable us to investigate the potential energy landscape in detail and unveil the first direct evidence of the topographic hierarchy that induces the $β$ relaxation. We also successfully characterize the microscopic motions of particles during each relaxation process. Finally, we study the predictive power of low-frequency modes for two relaxation processes. Our results establish for the first time a fundamental and comprehensive understanding of experimentally observed relaxation dynamics in supercooled liquids.
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Submitted 4 September, 2022;
originally announced September 2022.
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Low-Frequency Vibrational States in Ideal Glasses with Random Pinning
Authors:
Kumpei Shiraishi,
Yusuke Hara,
Hideyuki Mizuno
Abstract:
Glasses exhibit spatially localized vibrations in the low-frequency regime. These localized modes emerge below the boson peak frequency $ω_\text{BP}$, and their vibrational densities of state follow $g(ω) \propto ω^4$ ($ω$ is frequency). Here, we attempt to address how the localized vibrations behave through the ideal glass transition. To do this, we employ a random pinning method, which enables u…
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Glasses exhibit spatially localized vibrations in the low-frequency regime. These localized modes emerge below the boson peak frequency $ω_\text{BP}$, and their vibrational densities of state follow $g(ω) \propto ω^4$ ($ω$ is frequency). Here, we attempt to address how the localized vibrations behave through the ideal glass transition. To do this, we employ a random pinning method, which enables us to study the thermodynamic glass transition. We find that the localized vibrations survive even in equilibrium glass states. Remarkably, the localized vibrations still maintain the properties of appearance below $ω_\text{BP}$ and $g(ω) \propto ω^4$. Our results provide important insight into the material properties of ideal glasses.
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Submitted 25 August, 2022;
originally announced August 2022.
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Instantaneous normal modes of glass-forming liquids during the athermal relaxation process of the steepest descent algorithm
Authors:
Masanari Shimada,
Kumpei Shiraishi,
Hideyuki Mizuno,
Atsushi Ikeda
Abstract:
Understanding glass formation by quenching remains a challenge in soft condensed matter physics. Recent numerical studies on steepest descent dynamics, which is one of the simplest models of quenching, revealed that quenched liquids undergo slow relaxation with a power law towards mechanical equilibrium and that the late stage of this process is governed by local rearrangements of particles. These…
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Understanding glass formation by quenching remains a challenge in soft condensed matter physics. Recent numerical studies on steepest descent dynamics, which is one of the simplest models of quenching, revealed that quenched liquids undergo slow relaxation with a power law towards mechanical equilibrium and that the late stage of this process is governed by local rearrangements of particles. These advances motivate the detailed study of instantaneous normal modes during the relaxation process because the glassy dynamics is considered to be governed by stationary points of the potential energy landscape. Here, we performed a normal mode analysis of configurations during the steepest descent dynamics and found that the dynamics is driven by almost flat directions of the potential energy landscape at long times. These directions correspond to localized modes and we characterized them in terms of their statistics and structure using methods developed in the study of local minima of the potential energy landscape.
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Submitted 26 January, 2024; v1 submitted 23 November, 2021;
originally announced November 2021.
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Negative-charge-storing mechanism of potassium-ion electrets used for vibration-powered generators: Microscopic study of a-SiO2 with and without potassium atoms
Authors:
Toru Nakanishi,
Takeshi Miyajima,
Kenta Chokawa,
Masaaki Araidai,
Hiroshi Toshiyoshi,
Tatsuhiko Sugiyama,
Gen Hashiguchi,
Kenji Shiraishi
Abstract:
A potassium-ion electret, which is a key element of vibration-powered microelectromechanical generators, can store negative charge almost permanently. However, the mechanism by which this negative charge is stored is still unclear. We theoretically study the atomic and electronic structures of amorphous silica (a-SiO2) with and without potassium atoms using first-principles molecular-dynamics calc…
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A potassium-ion electret, which is a key element of vibration-powered microelectromechanical generators, can store negative charge almost permanently. However, the mechanism by which this negative charge is stored is still unclear. We theoretically study the atomic and electronic structures of amorphous silica (a-SiO2) with and without potassium atoms using first-principles molecular-dynamics calculations. Our calculations show that a fivefold-coordinated Si atom with five Si-O bonds (an SiO5 structure) is the characteristic local structure of a-SiO2 with potassium atomsm, which becomes negatively charged and remains so even after removal of the potassium atoms. These results indicate that this SiO5 structure is the physical origin of the robust negative charge observed in potassium-ion electrets. We also find that the SiO5 structure has a Raman peak at 1000cm-1.
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Submitted 9 September, 2020;
originally announced September 2020.
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Mechanical and Vibrational Properties of Three-Dimensional Dimer Packings Near the Jamming Transition
Authors:
Kumpei Shiraishi,
Hideyuki Mizuno,
Atsushi Ikeda
Abstract:
We comprehensively study mechanical and vibrational properties of dimer packings in three-dimensional space with particular attention on critical scaling behaviors near the jamming transition. First, we confirm the dependence of the packing fraction at the transition on the aspect ratio, the isostatic contact number at the transition, and the scaling dependence of the excess contact number on the…
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We comprehensively study mechanical and vibrational properties of dimer packings in three-dimensional space with particular attention on critical scaling behaviors near the jamming transition. First, we confirm the dependence of the packing fraction at the transition on the aspect ratio, the isostatic contact number at the transition, and the scaling dependence of the excess contact number on the excess density. Second, we study the elastic moduli, bulk and shear moduli, and establish power-law scaling of them. Finally, we study the vibrational density of states and its characteristic frequency. The vibrational density of states shows two plateaus in the lower- and higher-frequency regions, which are characterized by rotational and translational vibrational modes, respectively. The onset frequency of the lower-frequency plateau scales linearly to the square root of excess density. The scaling laws in the mechanical and vibrational properties are consistent between two- and three-dimensional dimers, and they are identical to those in spheres.
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Submitted 7 May, 2020; v1 submitted 6 May, 2020;
originally announced May 2020.
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Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
Authors:
Takashi Nakano,
Yosuke Harashima,
Kenta Chokawa,
Kenji Shiraishi,
Atsushi Oshiyama,
Yoshihiro Kangawa,
Shigeyoshi Usami,
Norihito Mayama,
Kazuya Toda,
Atsushi Tanaka,
Yoshio Honda,
Hiroshi Amano
Abstract:
Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in…
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Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in the energy gap induced by the dislocations are elevated towards the conduction band as the Mg impurity approaches the dislocation line, indicating that the Mg-TSD complex is a donor. The formation of the Mg-TSD complex is unequivocally evidenced by our atom probe tomography in which Mg condensation and diffusion through [0001] screw dislocations is observed in p-n diodes. These findings provide a novel picture that the Mg being a p-type impurity in GaN diffuses toward the TSD and then locally forms an n-type region. The appearance of this region along the TSD results the reverse leakage current.
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Submitted 15 April, 2020;
originally announced April 2020.
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Vibrational properties of two-dimensional dimer packings near the jamming transition
Authors:
Kumpei Shiraishi,
Hideyuki Mizuno,
Atsushi Ikeda
Abstract:
Jammed particulate systems composed of various shapes of particles undergo the jamming transition as they are compressed or decompressed. To date, sphere packings have been extensively studied in many previous works, where isostaticity at the transition and scaling laws with the pressure of various quantities, including the contact number and the vibrational density of states, have been establishe…
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Jammed particulate systems composed of various shapes of particles undergo the jamming transition as they are compressed or decompressed. To date, sphere packings have been extensively studied in many previous works, where isostaticity at the transition and scaling laws with the pressure of various quantities, including the contact number and the vibrational density of states, have been established. Additionally, much attention has been paid to nonspherical packings, and particularly recent work has made progress in understanding ellipsoidal packings. In the present work, we study the dimer packings in two dimensions, which have been much less understood than systems of spheres and ellipsoids. We first study the contact number of dimers near the jamming transition. It turns out that packings of dimers have "rotational rattlers", each of which still has a free rotational motion. After correcting this effect, we show that dimers become isostatic at the jamming, and the excess contact number obeys the same critical law and finite size scaling law as those of spheres. We next study the vibrational properties of dimers near the transition. We find that the vibrational density of states of dimers exhibits two characteristic plateaus that are separated by a peak. The high-frequency plateau is dominated by the translational degree of freedom, while the low-frequency plateau is dominated by the rotational degree of freedom. We establish the critical scaling laws of the characteristic frequencies of the plateaus and the peak near the transition. In addition, we present detailed characterizations of the real space displacement fields of vibrational modes in the translational and rotational plateaus.
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Submitted 8 May, 2019;
originally announced May 2019.
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Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons
Authors:
Ayami Hattori,
Keiji Yada,
Masaaki Araidai,
Masatoshi Sato,
Kenji Shiraishi,
Yukio Tanaka
Abstract:
Using a multi-orbital tight-binding model, we have studied the edge states of zigzag silicene, germanene, and stanene nanoribbons (ZSiNRs, ZGeNRs and ZSnNRs, respectively) in the presence of the Coulomb interaction and a vertical electric field. The resulting edge states have non-linear energy dispersions due to multi-orbital effects, and the nanoribbons show induced magnetization at the edges. Ow…
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Using a multi-orbital tight-binding model, we have studied the edge states of zigzag silicene, germanene, and stanene nanoribbons (ZSiNRs, ZGeNRs and ZSnNRs, respectively) in the presence of the Coulomb interaction and a vertical electric field. The resulting edge states have non-linear energy dispersions due to multi-orbital effects, and the nanoribbons show induced magnetization at the edges. Owing to this non-linear dispersion, ZSiNRs, ZGeNRs and ZSnNRs may not provide superior performance in field effect transistors, as has been proposed from single-orbital tight-binding model calculations. We propose an effective low-energy model that describes the edge states of ZSiNRs, ZGeNRs, and ZSnNRs. We demonstrate that the edge states of ZGeNR and ZSnNR show anti-crossing of bands with opposite spins, even if only out-of-plane edge magnetization is present. The ability to tune the spin polarizations of the edge states by applying an electric field points to future opportunities to fabricate silicene, germanene and stanene nanoribbons as spintronics devices.
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Submitted 1 October, 2018;
originally announced October 2018.
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Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons
Authors:
Ayami Hattori,
Sho Tanaya,
Keiji Yada,
Masaaki Araidai,
Masatoshi Sato,
Yasuhiro Hatsugai,
Kenji Shiraishi,
Yukio Tanaka
Abstract:
We investigate the energy dispersion of the edge states in zigzag silicene, germanene and stanene nanoribbons with and without hydrogen termination based on a multi-orbital tight-binding model. Since the low buckled structures are crucial for these materials, both the $π$ and $σ$ orbitals have a strong influence on the edge states, different from the case for graphene nanoribbons. The obtained dis…
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We investigate the energy dispersion of the edge states in zigzag silicene, germanene and stanene nanoribbons with and without hydrogen termination based on a multi-orbital tight-binding model. Since the low buckled structures are crucial for these materials, both the $π$ and $σ$ orbitals have a strong influence on the edge states, different from the case for graphene nanoribbons. The obtained dispersion of helical edge states is nonlinear, similar to that obtained by first-principles calculations. On the other hand, the dispersion derived from the single-orbital tight-binding model is always linear. Therefore, we find that the non-linearity comes from the multi-orbital effects, and accurate results cannot be obtained by the single-orbital model but can be obtained by the multi-orbital tight-binding model. We show that the multi-orbital model is essential for correctly understanding the dispersion of the edge states in tetragen nanoribbons with a low buckled geometry.
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Submitted 30 December, 2016; v1 submitted 16 April, 2016;
originally announced April 2016.
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Flat bands in Weaire-Thorpe model and silicene
Authors:
Y. Hatsugai,
K. Shiraishi,
H. Aoki
Abstract:
In order to analytically capture and identify peculiarities in the electronic structure of silicene, Weaire-Thorpe(WT) model, a standard model for treating three-dimensional (3D) silicon, is applied to silicene with the buckled 2D structure. In the original WT model for four hybridized $sp^3$ orbitals on each atom along with inter-atom hop**, the band structure can be systematically examined in…
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In order to analytically capture and identify peculiarities in the electronic structure of silicene, Weaire-Thorpe(WT) model, a standard model for treating three-dimensional (3D) silicon, is applied to silicene with the buckled 2D structure. In the original WT model for four hybridized $sp^3$ orbitals on each atom along with inter-atom hop**, the band structure can be systematically examined in 3D, where flat (dispersionless) bands exist as well. For examining silicene, here we re-formulate the WT model in terms of the overlap** molecular-orbital (MO) method which enables us to describe flat bands away from the electron-holesymmetric point. The overlap** MO formalism indeed enables us to reveal an important difference: while in 3D the dipersive bands with cones are sandwiched by doubly-degenerate flat bands, in 2D the dipersive bands with cones are sandwiched by triply-degenerate and non-degenerate (nearly) flat bands, which is consistent with the original band calculation by Takeda and Shiraishi. Thus emerges a picture for why the whole band structure of silicene comprises a pair of dispersive bands with Dirac cones with each of the band touching a nearly flat (narrow) band at $Γ$. We can also recognize that, for band engineering, the bonds perpendicular to the atomic plane are crucial, and that a ferromagnetism or structural instabilities are expected if we can shift the chemical potential close to the flat bands.
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Submitted 30 January, 2015; v1 submitted 29 October, 2014;
originally announced October 2014.
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The phase synchronization of an axion and a superconductor
Authors:
Hideto Manjo,
Koichiro Kobayashi,
Kiyoshi Shiraishi
Abstract:
The effects of the axion field have been widely studied in theoretical physics, particularly in particle physics. Considering the phase synchronization and the mean free path of the axion, the bulk of the phase coherent superconductor is regarded as the weak link region of the Josephson junction.It is expected that the axion mass influences the London penetration depth.There is a slight possibilit…
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The effects of the axion field have been widely studied in theoretical physics, particularly in particle physics. Considering the phase synchronization and the mean free path of the axion, the bulk of the phase coherent superconductor is regarded as the weak link region of the Josephson junction.It is expected that the axion mass influences the London penetration depth.There is a slight possibility of detecting this effect because the effect becomes more significant in superconductor with a low carrier density $n_s$.The differences due to the choice of axion model and the axion mass are discussed.
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Submitted 21 January, 2015; v1 submitted 8 July, 2014;
originally announced July 2014.
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Interacting Electron Wave Packet Dynamics in a Two-dimensional Nanochannel
Authors:
Christoph M. Puetter,
Satoru Konabe,
Yasuhiro Hatsugai,
Kenji Ohmori,
Kenji Shiraishi
Abstract:
Classical and quantum dynamics are important limits for the understanding of the transport characteristics of interacting electrons in nanodevices. Here we apply an intermediate semiclassical approach to investigate the dynamics of two interacting electrons in a planar nanochannel as a function of Coulomb repulsion and electric field. We find that charge is mostly redistributed to the channel edge…
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Classical and quantum dynamics are important limits for the understanding of the transport characteristics of interacting electrons in nanodevices. Here we apply an intermediate semiclassical approach to investigate the dynamics of two interacting electrons in a planar nanochannel as a function of Coulomb repulsion and electric field. We find that charge is mostly redistributed to the channel edges and that an electric field enhances the particle-like character of electrons. These results may have significant implications for the design and study of future nanodevices.
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Submitted 9 June, 2013; v1 submitted 12 April, 2013;
originally announced April 2013.
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Semiclassical Klein Tunneling and Valley Hall Effect in Graphene
Authors:
Christoph. M. Puetter,
Satoru Konabe,
Yasuhiro Tokura,
Yasuhiro Hatsugai,
Kenji Shiraishi
Abstract:
We study the dynamics of semiclassical electrons in (gapped) graphene in two complementary limits, i.e. in the Klein tunneling and valley Hall effect regimes, by scattering wave packets off armchair step potentials and by exposing wave packets to a uniform electric field, respectively. Our numerical wave packet simulation goes beyond semiclassical analytical approximations and standard Klein tunne…
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We study the dynamics of semiclassical electrons in (gapped) graphene in two complementary limits, i.e. in the Klein tunneling and valley Hall effect regimes, by scattering wave packets off armchair step potentials and by exposing wave packets to a uniform electric field, respectively. Our numerical wave packet simulation goes beyond semiclassical analytical approximations and standard Klein tunneling treatments and allows to study intra- and intervalley scattering processes. We find distinct Klein tunneling characteristics for low and tall steps, which include unusual Berry curvature induced side shifts of the scattered wave packet trajectories. In the presence of a uniform field, our simulations capture the semiclassical valley Hall effect which manifests in the form of laterally shifted Bloch oscillations. Such anomalous trajectory corrections can be relevant for Klein tunneling experiments and electron optics devices. We present detailed simulation results.
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Submitted 16 August, 2014; v1 submitted 1 November, 2012;
originally announced November 2012.
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Intrinsic Origin of Negative Fixed Charge in Wet Oxidation for Silicon Carbide
Authors:
Yasuhiro Ebihara,
Kenta Chokawa,
Shigenori Kato,
Katsumasa Kamiya,
Kenji Shiraishi
Abstract:
We demonstrate on the basis of first-principles calculations that the formation of carbonate-like moiety in SiO$_2$ could be the intrinsic origin of negative fixed charge in SiC thermal oxidation. We find that two possible origins for the negative fixed charges are O-lone-pair state and a negatively charged CO$_3$ ion in SiO$_2$. Such CO$_3$ ion is able to be formed as a result of the existence of…
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We demonstrate on the basis of first-principles calculations that the formation of carbonate-like moiety in SiO$_2$ could be the intrinsic origin of negative fixed charge in SiC thermal oxidation. We find that two possible origins for the negative fixed charges are O-lone-pair state and a negatively charged CO$_3$ ion in SiO$_2$. Such CO$_3$ ion is able to be formed as a result of the existence of residual C atoms in SiO$_2$, which are expected to be emitted from the interface between SiC and SiO$_2$, and the incorporation of H atoms during wet oxidation.
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Submitted 24 April, 2012;
originally announced April 2012.
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Importance of Initial Electronic State in Two-Dimensional Electron System for Electron Transport from Two-Dimensional Electron Gas to Quantum Dot
Authors:
Masakazu Muraguchi,
Yukihiro Takada,
Shintaro Nomura,
Testuo Endoh,
Kenji Shiraishi
Abstract:
We have theoretically investigated the time-evolution of electron transport from a two-dimensional electron system (2DES) to a quantum dot (QD). We clearly showed that the coherent electron transport is remarkably modified depending on the initial electronic state in the 2DES. The electron transport from the 2DES to the QD is strongly enhanced when the initial state of electron in the 2DES is lo…
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We have theoretically investigated the time-evolution of electron transport from a two-dimensional electron system (2DES) to a quantum dot (QD). We clearly showed that the coherent electron transport is remarkably modified depending on the initial electronic state in the 2DES. The electron transport from the 2DES to the QD is strongly enhanced when the initial state of electron in the 2DES is localized below the QD. We indicate that these features should be obtained in other nano-structure-electrode coupled systems, and the electron transport between the systems having completely different geometrical conditions is significantly affected by the initial spatial distribution of the electron density.
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Submitted 11 December, 2008;
originally announced December 2008.
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Tunable Exchange Interaction in Quantum Dot Devices
Authors:
H. Tamura,
K. Shiraishi,
H. Takayanagi
Abstract:
We theoretically discuss the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between semiconductor quantum dots (QDs). When each QD having a local spin is coupled to the conduction electrons in semiconductors, an indirect exchange interaction, i.e., the RKKY interaction, is induced between two local spins. The RKKY interaction between QDs, which is mediated by the Fermi sea in semiconductors, i…
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We theoretically discuss the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between semiconductor quantum dots (QDs). When each QD having a local spin is coupled to the conduction electrons in semiconductors, an indirect exchange interaction, i.e., the RKKY interaction, is induced between two local spins. The RKKY interaction between QDs, which is mediated by the Fermi sea in semiconductors, is modulated by changing the Fermi energy, and the magnitude or even the sign of the exchange interaction can be tuned, which leads to a tunable magnetic transition in QD devices. We estimate the magnitude of the RKKY interaction in QDs as a function of the electron density and the inter-dot distance.
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Submitted 26 April, 2004;
originally announced April 2004.
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Superconductivity in quantum-dot superlattices composed of quantum wire networks
Authors:
Takashi Kimura,
Hiroyuki Tamura,
Kazuhiko Kuroki,
Kenji Shiraishi,
Hideaki Takayanagi,
Ryotaro Arita
Abstract:
Based on calculations using the local density approximation, we propose quantum wire networks with square and plaquette type lattice structures that form quantum dot superlattices. These artificial structures are well described by the Hubbard model. Numerical analysis reveals a superconducting ground state with transition temperatures $T_c$ of up to 90 mK for the plaquette, which is more than do…
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Based on calculations using the local density approximation, we propose quantum wire networks with square and plaquette type lattice structures that form quantum dot superlattices. These artificial structures are well described by the Hubbard model. Numerical analysis reveals a superconducting ground state with transition temperatures $T_c$ of up to 90 mK for the plaquette, which is more than double the value of 40 mK for the square lattice type and is sufficiently high to allow for the experimental observation of superconductivity.
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Submitted 10 April, 2002;
originally announced April 2002.
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Flat-band ferromagnetism in quantum dot superlattices
Authors:
Hiroyuki Tamura,
Kenji Shiraishi,
Takashi Kimura,
Hideaki Takayanagi
Abstract:
Possibility of flat-band ferromagnetism in quantum dot arrays is theoretically discussed. By using a quantum dot as a building block, quantum dot superlattices are possible. We consider dot arrays on Lieb and kagome lattices known to exhibit flat band ferromagnetism. By performing an exact diagonalization of the Hubbard Hamiltonian, we calculate the energy difference between the ferromagnetic gr…
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Possibility of flat-band ferromagnetism in quantum dot arrays is theoretically discussed. By using a quantum dot as a building block, quantum dot superlattices are possible. We consider dot arrays on Lieb and kagome lattices known to exhibit flat band ferromagnetism. By performing an exact diagonalization of the Hubbard Hamiltonian, we calculate the energy difference between the ferromagnetic ground state and the paramagnetic excited state, and discuss the stability of the ferromagnetism against the second nearest neighbor transfer. We calculate the dot-size dependence of the energy difference in a dot model and estimate the transition temperature of the ferromagnetic-paramagnetic transition which is found to be accessible within the present fabrication technology. We point out advantages of semiconductor ferromagnets and suggest other interesting possibilities of electronic properties in quantum dot superlattices.
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Submitted 1 May, 2001;
originally announced May 2001.
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Magnetic field effects on two-dimensional Kagome lattices
Authors:
Takashi Kimura,
Hiroyuki Tamura,
Kenji Shiraishi,
Hideaki Takayanagi
Abstract:
Magnetic field effects on single-particle energy bands (Hofstadter butterfly), Hall conductance, flat-band ferromagnetism, and magnetoresistance of two-dimensional Kagome lattices are studied. The flat-band ferromagnetism is shown to be broken as the flat-band has finite dispersion in the magnetic field. A metal-insulator transition induced by the magnetic field (giant negative magnetoresistance…
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Magnetic field effects on single-particle energy bands (Hofstadter butterfly), Hall conductance, flat-band ferromagnetism, and magnetoresistance of two-dimensional Kagome lattices are studied. The flat-band ferromagnetism is shown to be broken as the flat-band has finite dispersion in the magnetic field. A metal-insulator transition induced by the magnetic field (giant negative magnetoresistance) is predicted. In the half-filled flat band, the ferromagnetic-paramagnetic transition and the metal-insulator one occur simultaneously at a magnetic field for strongly interacting electrons. All of the important magnetic fields effects should be observable in mesoscopic systems such as quantum dot superlattices.
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Submitted 2 April, 2001;
originally announced April 2001.
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Design of a semiconductor ferromagnet in a quantum dot artificial crystal
Authors:
Kenji Shiraishi,
Hiroyuki Tamura,
Hideaki Takayanagi
Abstract:
We present the theoretical design of quantum dot (QD) artificial ferromagnetic crystals. The electronic structure calculations based on local spin density approximation (LSDA) show that our designed QD artificial crystal from a structure comprising the crossing 0.104-micrometer-wide InAs quantum wires (an effective Kagome lattice) has flat band characteristics. Our examined QD artificial crystal…
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We present the theoretical design of quantum dot (QD) artificial ferromagnetic crystals. The electronic structure calculations based on local spin density approximation (LSDA) show that our designed QD artificial crystal from a structure comprising the crossing 0.104-micrometer-wide InAs quantum wires (an effective Kagome lattice) has flat band characteristics. Our examined QD artificial crystal has the ferromagnetic ground state when the flat band is half-filled, even though it contains no magnetic elements. The ferromagnetic and the paramagnetic state can be freely switched by changing the electron filling via a gate voltage.
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Submitted 17 January, 2001;
originally announced January 2001.
