Showing 1–12 of 12 results for author: Shin, M

A New Paradigm Integrating the Concepts of Particle Abrasion and Breakage

Authors: Priya Tripathi, Seung Jae Lee, Moochul Shin, Chang Hoon Lee

Abstract: This paper introduces a new paradigm that integrates the concepts of particle abrasion and breakage. Both processes can co-occur under loading as soil particles are subjected to friction as well as collisions between particles. Therefore, the significance of this integrating paradigm lies in its ability to address both abrasion and breakage in a single framework. The new paradigm is mapped out in… ▽ More This paper introduces a new paradigm that integrates the concepts of particle abrasion and breakage. Both processes can co-occur under loading as soil particles are subjected to friction as well as collisions between particles. Therefore, the significance of this integrating paradigm lies in its ability to address both abrasion and breakage in a single framework. The new paradigm is mapped out in a framework called the 'particle geometry space.' The x-axis corresponds to the surface-area-to-volume ratio ($A/V$), while the y-axis represents volume ($V$). This space facilitates a holistic characterization of the four-particle geometry features, i.e., shape ($β$) and size ($D$) as well as surface area ($A$) and volume ($V$). Three distinct paths (abrasion, breakage, and equally-occurring abrasion and breakage processes), three limit lines (breakage line, sphere line, and average shape-conserving line), and five different zones are defined in the particle geometry space. Consequently, this approach enables us to systematically relate the extent of co-occurring abrasion and breakage to the particle geometry evolution. △ Less

Submitted 3 September, 2023; v1 submitted 7 June, 2023; originally announced June 2023.

Comments: 10 pages, 5 figures; Introduced a new term 'particle geometry space'; Improved readability and fixed minor typos;

Phenotypic Trait of Particle Geometries

Authors: Seung Jae Lee, Moochul Shin, Chang Hoon Lee, Priya Tripathi

Abstract: People of a race appear different but share a 'phenotypic trait' due to a common genetic origin. Mineral particles are like humans: they appear different despite having a same geological origin. Then, do the particles have some sort of 'phenotypic trait' in the geometries as we do? How can we characterize the phenotypic trait of particle geometries? This paper discusses a new perspective on how th… ▽ More People of a race appear different but share a 'phenotypic trait' due to a common genetic origin. Mineral particles are like humans: they appear different despite having a same geological origin. Then, do the particles have some sort of 'phenotypic trait' in the geometries as we do? How can we characterize the phenotypic trait of particle geometries? This paper discusses a new perspective on how the phenotypic trait can be discovered in the particle geometries and how the 'variation' and 'average' of the geometry can be quantified. The key idea is using the power-law between particle surface-area-to-volume ratio ($A/V$) and the particle volume ($V$) that uncovers the phenotypic trait in terms of $α$ and $β^*$: From the log-transformed relation of $V = (A/V)^α {\times} β^*$, the power value $α$ represents the relation between shape and size, while the term $β^*$ (evaluated by fixing $α$ = -3) informs the angularity of the average shape in the granular material. In other words, $α$ represents the 'variation' of the geometry while $β^*$ is concerned with the 'average' geometry of a granular material. Furthermore, this study finds that $A/V$ and $V$ can be also used to characterize individual particle shape in terms of Wadell's true Sphericity ($S$). This paper also revisits the $M = A/V {\times} L/6$ concept originally introduced by Su et al. (2020) and finds the shape index $M$ is an extended form of $S$ providing additional information about the particle elongation. Therefore, the proposed method using $A/V$ and $V$ provides a unified approach that can characterize the particle geometry at multiple scales from granular material to a single particle. Ref.: Su, Y.F., Bhattacharya, S., Lee, S.J., Lee, C.H., Shin, M.: A new interpretation of three-dimensional particle geometry: M-A-V-L. Transp. Geotech. 23, 100328 (2020). △ Less

Submitted 27 October, 2021; v1 submitted 27 October, 2021; originally announced October 2021.

Comments: 30 pages, 15 figures, 8 tables; No difference from arXiv:2110.14469v1 except the first page stamp and the header on the manuscript

Journal ref: Granular Matter 24, 79 (2022)

Hetero-structure Mode Space Method for Efficient Device Simulations

Authors: Mincheol Shin

Abstract: The Hamiltonian size reduction method or the mode space method applicable to general heterogeneous structures is developed in this work. The effectiveness and accuracy of the method are demonstrated for four example devices of GaSb/InAs tunnel field effect transistor (FET), MoTe2/SnS2 bilayer vertical FET, InAs nanowire FET with a defect, and Si nanowire FET with rough surfaces. The Hamiltonian si… ▽ More The Hamiltonian size reduction method or the mode space method applicable to general heterogeneous structures is developed in this work. The effectiveness and accuracy of the method are demonstrated for four example devices of GaSb/InAs tunnel field effect transistor (FET), MoTe2/SnS2 bilayer vertical FET, InAs nanowire FET with a defect, and Si nanowire FET with rough surfaces. The Hamiltonian size is reduced to around 5 % of the original full Hamiltonian size without losing the accuracy of the calculated transmission and local density of states in a practical sense. The method developed in this work can be used with any type of Hamiltonian and can be applied to virtually any hetero-structure, so it has the potential to become an enabling technology for efficient simulations of hetero-structures. △ Less

Submitted 3 September, 2021; v1 submitted 22 July, 2021; originally announced July 2021.

Journal ref: Journal of Applied Physics, 130, 104303 (2021)

A New Interpretation of Three-Dimensional Particle Geometry: M-A-V-L

Authors: Yu Feng Su, Sumana Bhattacharya, Seung Jae Lee, Chang Hoon Lee, Moochul Shin

Abstract: This study provides a new interpretation of 3D particle geometry that unravels the 'interrelation' of the four geometry parameters, i.e., morphology M, surface area A, volume V, and size L, for which a new formula, M = A/V$\times$L/6, is introduced to translate the 3D particle morphology as a function of surface area, volume, and size. The A/V$\times$L of a sphere is invariably 6, which is placed… ▽ More This study provides a new interpretation of 3D particle geometry that unravels the 'interrelation' of the four geometry parameters, i.e., morphology M, surface area A, volume V, and size L, for which a new formula, M = A/V$\times$L/6, is introduced to translate the 3D particle morphology as a function of surface area, volume, and size. The A/V$\times$L of a sphere is invariably 6, which is placed in the denominator of the formula, and therefore M indicates a relative morphological irregularity compared to the sphere. The minimum possible value of M is clearly one, and M may range approximately to three for coarse-grained mineral particles. Furthermore, the proposed formula, M = A/V$\times$L/6, enables to graphically preserve the four parameters' relations when plotting the geometry parameter distributions. This study demonstrates the approach with two plot spaces that represent (i) L vs. M and (ii) A/V vs. V, where A/V works as the messenger between these two spaces as A/V = M/L$\times$6. Therefore, this approach helps comprehensively address the four-dimensional aspects of the 3D particle geometry and better understand the parameters' combined influence on the mechanical behavior of granular materials. Keywords: 3D particle geometry; Morphology; Surface area; Volume; Size; △ Less

Submitted 6 February, 2020; v1 submitted 25 August, 2018; originally announced August 2018.

Comments: 36 pages, 13 figures; Transportation Geotechnics (2020) https://www.sciencedirect.com/science/article/abs/pii/S2214391219302983

Photoluminescence Saturation and Exciton Decay Dynamics in Transition Metal Dichalcogenide Monolayers

Authors: Min Ju Shin, Dong Hak Kim, D. Lim

Abstract: We report a photoluminescence (PL) and transient reflection spectroscopy study of exciton dynamics in monolayer transition transition-metal dichalcogenides (TMDs). PL saturation in monolayer MoSe2 occurs an excitation intensity more than two orders of magnitude lower than in monolayer MoS2. Transient reflection shows that the nonlinear exciton-exciton annihilation is the dominant exciton decay pro… ▽ More We report a photoluminescence (PL) and transient reflection spectroscopy study of exciton dynamics in monolayer transition transition-metal dichalcogenides (TMDs). PL saturation in monolayer MoSe2 occurs an excitation intensity more than two orders of magnitude lower than in monolayer MoS2. Transient reflection shows that the nonlinear exciton-exciton annihilation is the dominant exciton decay process in monolayer MoSe2 in contrast to the previously reported linear exciton decay in monolayer MoS2. In addition, the exciton lifetime in MoSe2, > 125 ps, is more than an order of magnitude longer than the several-ps exciton lifetime in MoS2. We find that the dramatically different exciton decay mechanism and PL saturation behavior of MoSe2 and MoS2 monolayers can be explained by the difference in their exciton lifetime. △ Less

Submitted 24 September, 2014; v1 submitted 16 September, 2014; originally announced September 2014.

Comments: This manuscript is withdrawn due to incomplete introduction and reference

Surface-Roughness-Limited Mean Free Path in Si Nanowire FETs

Authors: Hyo-Eun Jung, Mincheol Shin

Abstract: The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method. The entrance scattering effect associated with finiteness of the channel length is identified and a method to eliminate it in the calculation of the MFP is developed. The behavior… ▽ More The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method. The entrance scattering effect associated with finiteness of the channel length is identified and a method to eliminate it in the calculation of the MFP is developed. The behavior of the MFP with respect to channel length (L), channel width (W), and the root-mean-square (RMS) of the surface roughness is investigated extensively. Our major findings are that the single parameter, RMS/W, can be used as a good measure for the strength of the SRS effects and that the overall characteristics of the MFP are determined by the parameter. In particular, the MFP exponentially decreases with the increase of RMS/W and the MFP versus the gate electric field shows a distinctively different behavior depending on whether the strength of the SRS effects measured by RMS/W is smaller or greater than 0.06. △ Less

Submitted 20 April, 2013; originally announced April 2013.

Simulation Study of Ge p-type Nanowire Schottky Barrier MOSFETs

Authors: Jaehyun Lee, Mincheol Shin

Abstract: Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of devices with 100, 110, and 111 channel orientations, respectively, by varying the nanowire width, Schottky barrier height, and EOT. The 111 oriented devices showed… ▽ More Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of devices with 100, 110, and 111 channel orientations, respectively, by varying the nanowire width, Schottky barrier height, and EOT. The 111 oriented devices showed the best performance. In comparison to Si as a channel material, Ge is more desirable because more current can be injected into the channel, resulting in steeper subthreshold slope and higher on-state current. Our calculations predict that the Ge channel devices should have an EOT gain of 0.2-0.5 nm over Si channel devices. △ Less

Submitted 18 April, 2013; originally announced April 2013.

Comments: 3 pages, 3 figures

Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport

Authors: Hoon Ryu, Hong-Hyun Park, Mincheol Shin, Dragica Vasileska, Gerhard Klimeck

Abstract: Numerical utilities of the Contact Block Reduction (CBR) method in evaluating the retarded Green's function, are discussed for 3-D multi-band open systems that are represented by the atomic tight-binding (TB) and continuum k\cdotp (KP) band model. It is shown that the methodology to approximate solutions of open systems which has been already reported for the single-band effective mass model, cann… ▽ More Numerical utilities of the Contact Block Reduction (CBR) method in evaluating the retarded Green's function, are discussed for 3-D multi-band open systems that are represented by the atomic tight-binding (TB) and continuum k\cdotp (KP) band model. It is shown that the methodology to approximate solutions of open systems which has been already reported for the single-band effective mass model, cannot be directly used for atomic TB systems, since the use of a set of zincblende crystal grids makes the inter-coupling matrix be non-invertible. We derive and test an alternative with which the CBR method can be still practical in solving TB systems. This multi-band CBR method is validated by a proof of principles on small systems, and also shown to work excellent with the KP approach. Further detailed analysis on the accuracy, speed, and scalability on high performance computing clusters, is performed with respect to the reference results obtained by the state-of- the-art Recursive Green's Function and Wavefunction algorithm. This work shows that the CBR method could be particularly useful in calculating resonant tunneling features, but show a limited practicality in simulating field effect transistors (FETs) when the system is described with the atomic TB model. Coupled to the KP model, however, the utility of the CBR method can be extended to simulations of nanowire FETs. △ Less

Submitted 14 December, 2011; originally announced December 2011.

Comments: 10 Pages, 9 Figures

Thermally assisted quantum vortex tunneling in the Hall and dissipative regime

Authors: Gwang-Hee Kim, Mincheol Shin

Abstract: Quantum vortex tunneling is studied for the case where the Hall and the dissipative dynamics are simultaneously present. For a given temperature, the magnetization relaxation rate is calculated as a function of the external current and the quasiparticle scattering time. The relaxation rate is solved analytically at zero temperature and obtained numerically at finite temperatures by the variation… ▽ More Quantum vortex tunneling is studied for the case where the Hall and the dissipative dynamics are simultaneously present. For a given temperature, the magnetization relaxation rate is calculated as a function of the external current and the quasiparticle scattering time. The relaxation rate is solved analytically at zero temperature and obtained numerically at finite temperatures by the variational method. In the moderately clean samples, we have found that a minimum in the relaxation rate exists at zero temperature, which tends to disappear with increase in the temperature. △ Less

Submitted 15 June, 2002; originally announced June 2002.

Comments: 18 pages, 9 figures, to be published in Phys. Rev. B

Secondary Coulomb Blockade Gap in a Four-Island Tunnel-Junction Array

Authors: Mincheol Shin, Seongjae Lee, Kyoung Wan Park, El-Hang Lee

Abstract: In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces up to two electrons to get trapped inside. We have analyzed the formation and destruction of the gap in terms of detailed single-electron tunneling processes… ▽ More In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces up to two electrons to get trapped inside. We have analyzed the formation and destruction of the gap in terms of detailed single-electron tunneling processes. The negative differential resistance behavior when the thermal and quantum fluctuations are present is also studied. △ Less

Submitted 4 November, 1998; originally announced November 1998.

Comments: 8 pages, 8 figures, To appear in Phys. Rev. B

Quantum vortex creep :Hall and dissipative tunneling

Authors: Gwang-Hee Kim, Mincheol Shin

Abstract: Within the framework of the path-integral approach we study the quantum vortex creep for the situation where both the Hall and the dissipative dynamics are simultaneously present. We calculate the relaxation rate and the crossover temperature separating the thermal activation and the quantum tunneling processes for anisotropic or multilayer superconductors. The results are compared with the avai… ▽ More Within the framework of the path-integral approach we study the quantum vortex creep for the situation where both the Hall and the dissipative dynamics are simultaneously present. We calculate the relaxation rate and the crossover temperature separating the thermal activation and the quantum tunneling processes for anisotropic or multilayer superconductors. The results are compared with the available experimental data. △ Less

Submitted 21 September, 1998; originally announced September 1998.

Comments: 16 pages, Latex, 2 figures, to appear in Physica C

Geometrically Induced Multiple Coulomb Blockade Gaps

Authors: Mincheol Shin, Seongjae Lee, Kyoung Wan Park, El-Hang Lee

Abstract: We have theoretically investigated the transport properties of a ring-shaped array of small tunnel junctions, which is weakly coupled to the drain electrode. We have found that the long range interaction together with the semi-isolation of the array bring about the formation of stable standing configurations of electrons. The stable configurations break up during each transition from odd to even… ▽ More We have theoretically investigated the transport properties of a ring-shaped array of small tunnel junctions, which is weakly coupled to the drain electrode. We have found that the long range interaction together with the semi-isolation of the array bring about the formation of stable standing configurations of electrons. The stable configurations break up during each transition from odd to even number of trapped electrons, leading to multiple Coulomb blockade gaps in the the $I-V$ characteristics of the system. △ Less

Submitted 27 June, 1998; originally announced June 1998.

Comments: 4 Pages (two-columns), 4 Figures, to be published in Physical Review Letters