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Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$
Authors:
A. M. Shikin,
N. L. Zaitsev,
T. P. Estyunina,
D. A. Estyunin,
A. G. Rybkin,
D. A. Glazkova,
I. I. Klimovskikh,
A. V. Eryzhenkov,
K. A. Kokh,
V. A. Golyashov,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
T. Iwata,
T. Kosa,
K. Kuroda,
K. Shimada,
A. V. Tarasov
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradua…
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Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10$\%$ to 75$\%$. It was shown that when Ge concentration increases then the bulk band gap decreases and reaches zero plateau in the concentration range of 45$\%$-60$\%$ while non-topological surface states (TSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40$\%$. DFT calculations of $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ band structure were carried out to identify the nature of observed band dispersion features and to analyze a possibility of magnetic Weyl semimetal state formation in this system. These calculations were performed for both antiferromagnetic (AFM) and ferromagnetic (FM) ordering types while the spin-orbit coupling (SOC) strength was varied or a strain (compression or tension) along the $c$-axis was applied. Calculations show that two different series of topological phase transitions (TPTs) may be implemented in this system depending on the magnetic ordering. At AFM ordering transition between TI and trivial insulator phase goes through the Dirac semimetal state, whereas for FM phase such route admits three intermediate states instead of one (TI - Dirac semimetal - Weyl semimetal - Dirac semimetal - trivial insulator).
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Submitted 21 June, 2024;
originally announced June 2024.
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Observation of Spin Splitting in Room-Temperature Metallic Antiferromagnet CrSb
Authors:
Meng Zeng,
Ming-Yuan Zhu,
Yu-Peng Zhu,
Xiang-Rui Liu,
Xiao-Ming Ma,
Yu-Jie Hao,
Pengfei Liu,
Gexing Qu,
Yichen Yang,
Zhicheng Jiang,
Kohei Yamagami,
Masashi Arita,
Xiaoqian Zhang,
Tian-Hao Shao,
Yue Dai,
Kenya Shimada,
Zhengtai Liu,
Mao Ye,
Yaobo Huang,
Qihang Liu,
Chang Liu
Abstract:
Recently, unconventional antiferromagnets that enable the splitting of electronic spins have been theoretically proposed and experimentally realized, where the magnetic sublattices containing moments pointing at different directions are connected by a novel set of symmetries. Such spin splitting (SS) is substantial, $k$-dependent, and independent of the spin-orbit coupling strength, making these m…
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Recently, unconventional antiferromagnets that enable the splitting of electronic spins have been theoretically proposed and experimentally realized, where the magnetic sublattices containing moments pointing at different directions are connected by a novel set of symmetries. Such spin splitting (SS) is substantial, $k$-dependent, and independent of the spin-orbit coupling strength, making these magnets promising materials for antiferromagnetic spintronics. Here, combined with angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we perform a systematic study on CrSb, a metallic spin-split antiferromagnet candidate with $T_N$ = 703 K. Our data reveals the electronic structure of CrSb along both out-of-plane and in-plane momentum directions, which renders anisotropic $k$-dependent SS and agrees well with the calculational results. The magnitude of such SS reaches up to at least 0.8 eV at non-high-symmetry momentum points, which is significantly higher than the largest known SOC-induced SS. This compound expands the choice of materials in the field of antiferromagnetic spintronics and is likely to stimulate subsequent investigations of high-efficiency spintronic devices that are functional at room temperature.
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Submitted 21 May, 2024;
originally announced May 2024.
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Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials
Authors:
I. I. Klimovskikh,
S. V. Eremeev,
D. A. Estyunin,
S. O. Filnov,
K. Shimada,
V. A. Golyashov,
O. E. Tereshchenko,
K. A. Kokh,
A. S. Frolov,
A. I. Sergeev,
V. S. Stolyarov,
V. Miksic Trontl,
L. Petaccia,
G. Di Santo,
M. Tallarida,
J. Dai,
S. Blanco-Canosa,
T. Valla,
A. M. Shikin,
E. V. Chulkov
Abstract:
Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifi…
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Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.
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Submitted 18 March, 2024;
originally announced March 2024.
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Orbital-selective charge-density wave in TaTe$_4$
Authors:
R. Z. Xu,
X. Du,
J. S. Zhou,
X. Gu,
Q. Q. Zhang,
Y. D. Li,
W. X. Zhao,
F. W. Zheng,
M. Arita,
K. Shimada,
T. K. Kim,
C. Cacho,
Y. F. Guo,
Z. K. Liu,
Y. L. Chen,
L. X. Yang
Abstract:
TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe…
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TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe$_4$. At 26 K, we observe a CDW gap as large as 290 meV, which persists up to 500 K. The CDW-modulated band structure shows a complex reconstruction that closely correlates with the lattice distortion. Inside the CDW gap, there exist highly dispersive energy bands contributing to the remnant Fermi surface and metallic behavior in the CDW state. Interestingly, our ab-initio calculation reveals that the large CDW gap mainly opens in the electronic states with out-of-plane orbital components, while the in-gap metallic states originate from in-plane orbitals, suggesting an orbital texture that couples with the CDW order. Our results shed light on the interplay between electron, lattice, and orbital in quasi-one-dimensional CDW materials.
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Submitted 16 August, 2023;
originally announced August 2023.
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Strongly Anisotropic Spin and Orbital Rashba Effect at a Tellurium - Noble Metal Interface
Authors:
B. Geldiyev,
M. Ünzelmann,
P. Eck,
T. Kißlinger,
J. Schusser,
T. Figgemeier,
P. Kagerer,
N. Tezak,
M. Krivenkov,
A. Varykhalov,
A. Fedorov,
L. Nicolaï,
J. Minár,
K. Miyamoto,
T. Okuda,
K. Shimada,
D. Di Sante,
G. Sangiovanni,
L. Hammer,
M. A. Schneider,
H. Bentmann,
F. Reinert
Abstract:
We study the interplay of lattice, spin and orbital degrees of freedom in a two-dimensional model system: a flat square lattice of Te atoms on a Au(100) surface. The atomic structure of the Te monolayer is determined by scanning tunneling microscopy (STM) and quantitative low-energy electron diffraction (LEED-IV). Using spin- and angle-resolved photoelectron spectroscopy (ARPES) and density functi…
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We study the interplay of lattice, spin and orbital degrees of freedom in a two-dimensional model system: a flat square lattice of Te atoms on a Au(100) surface. The atomic structure of the Te monolayer is determined by scanning tunneling microscopy (STM) and quantitative low-energy electron diffraction (LEED-IV). Using spin- and angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT), we observe a Te-Au interface state with highly anisotropic Rashba-type spin-orbit splitting at the X point of the Brillouin zone. Based on a profound symmetry and tight-binding analysis, we show how in-plane square lattice symmetry and broken inversion symmetry at the Te-Au interface together enforce a remarkably anisotropic orbital Rashba effect which strongly modulates the spin splitting.
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Submitted 4 August, 2023;
originally announced August 2023.
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Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator
Authors:
Shailja Sharma,
Shiv Kumar,
Amit Kumar,
Kenya Shimada,
C. S. Yadav
Abstract:
The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler's rule. Hall resistivity measurement shows that electrons…
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The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler's rule. Hall resistivity measurement shows that electrons are dominant charge carriers. Furthermore, these results agree well with the ARPES spectra observed at T = 20 K, where the Fermi level lies inside the bulk conduction band. The Dirac point of the topological surface states is shifted toward higher binding energy (~ 0.12 eV) for Ag-doped samples as compared to pristine Bi2Se3.
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Submitted 1 March, 2023;
originally announced March 2023.
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Chiral Dirac fermion in a collinear antiferromagnet
Authors:
Ao Zhang,
Ke Deng,
Jieming Sheng,
Pengfei Liu,
Shiv Kumar,
Kenya Shimada,
Zhicheng Jiang,
Zhengtai Liu,
Dawei Shen,
Jiayu Li,
Jun Ren,
Le Wang,
Liang Zhou,
Yoshihisa Ishikawa,
Qiang Zhang,
Garry McIntyre,
Dehong Yu,
Enke Liu,
Liusuo Wu,
Chaoyu Chen,
Qihang Liu
Abstract:
In a Dirac semimetal, the massless Dirac fermion has zero chirality, leading to surface states connected adiabatically to a topologically trivial surface state as well as vanishing anomalous Hall effect (AHE). Recently, it is predicted that in the nonrelativistic limit of certain collinear antiferromagnets, there exists a type of chiral Dirac-like fermion, whose dispersion manifests four-fold dege…
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In a Dirac semimetal, the massless Dirac fermion has zero chirality, leading to surface states connected adiabatically to a topologically trivial surface state as well as vanishing anomalous Hall effect (AHE). Recently, it is predicted that in the nonrelativistic limit of certain collinear antiferromagnets, there exists a type of chiral Dirac-like fermion, whose dispersion manifests four-fold degenerate crossing points formed by spin-degenerate linear bands, with topologically protected Fermi arcs. Such unconventional chiral fermion, protected by a hidden SU(2) symmetry in the hierarchy of an enhanced crystallographic group, namely spin space group, is not experimentally verified yet. Here, by angle-resolved photoemission spectroscopy measurements, we reveal the surface origin of the electron pocket at the Fermi surface in collinear antiferromagnet CoNb3S6. Combining with neutron diffraction and first-principles calculations, we suggest a multidomain collinear AFM configuration, rendering the the existence of the Fermi-arc surface states induced by chiral Dirac-like fermions. Our work provides spectral evidence of the chiral Dirac-like fermion caused by particular spin symmetry in CoNb3S6, paving an avenue for exploring new emergent phenomena in antiferromagnets with unconventional quasiparticle excitations.
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Submitted 17 December, 2023; v1 submitted 28 January, 2023;
originally announced January 2023.
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Realization of Practical Eightfold Fermions and Fourfold van Hove Singularity in TaCo$_2$Te$_2$
Authors:
Hongtao Rong,
Zhenqiao Huang,
Xin Zhang,
Shiv Kumar,
Fayuang Zhang,
Chengcheng Zhang,
Yuan Wang,
Zhanyang Hao,
Yongqing Cai,
Le Wang,
Cai Liu,
Xiao-Ming Ma,
Shu Guo,
Bing Shen,
Yi Liu,
Shengtao Cui,
Kenya Shimada,
Quansheng Wu,
Junhao Lin,
Yugui Yao,
Zhiwei Wang,
Hu Xu,
Chaoyu Chen
Abstract:
Space groups describing the symmetry of lattice structure allow the emergence of fermionic quasiparticles with various degeneracy in the band structure. Theoretical efforts have predicted many materials hosting fermions with the highest degeneracy, i.e., eightfold fermions, yet lacking experimental realization. Here, we explore the band degeneracies in TaCo$_2$Te$_2$ crystals. Through systematic e…
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Space groups describing the symmetry of lattice structure allow the emergence of fermionic quasiparticles with various degeneracy in the band structure. Theoretical efforts have predicted many materials hosting fermions with the highest degeneracy, i.e., eightfold fermions, yet lacking experimental realization. Here, we explore the band degeneracies in TaCo$_2$Te$_2$ crystals. Through systematic experimental and theoretical analyses, we establish TaCo$_2$Te$_2$ as a nonsymmorphic crystal with negligible spin-orbit coupling (SOC) and long-range magnetic order. These critical properties guarantee the first realization of practical eightfold fermions and fourfold van Hove singularity, as directly observed by photoemission spectroscopy. TaCo$_2$Te$_2$ serves as a topological quantum critical platform, which can be tuned into various magnetic, topologically trivial, and nontrivial phases by adding strain, magnetic field, or SOC. The latter is demonstrated by our first-principles calculations, which show that enhancing SOC in TaCo$_2$Te$_2$ will promote the experimental observation of bulk hourglass fermions. Our results establish TaCo$_2$Te$_2$ as a unique platform to explore states of matter intertwining magnetism, correlation, symmetry, and band topology.
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Submitted 22 November, 2022; v1 submitted 4 August, 2022;
originally announced August 2022.
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Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$
Authors:
Shailja Sharma,
Shiv Kumar,
Girish C. Tewari,
Gargee Sharma,
Eike F. Schwier,
Kenya Shimada,
A. Taraphder,
C. S. Yadav
Abstract:
We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te…
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We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd do**. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi$_{2}$Te$_{3}$ to p-type charge carriers upon Pd do**. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi$_{2}$Te$_{3}$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd do** in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.
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Submitted 1 March, 2023; v1 submitted 3 January, 2022;
originally announced January 2022.
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Observation of topological flat bands in the kagome semiconductor Nb$_3$Cl$_8$
Authors:
Zhenyu Sun,
Hui Zhou,
Cuixiang Wang,
Shiv Kumar,
Daiyu Geng,
Shaosheng Yue,
Xin Han,
Yuya Haraguchi,
Kenya Shimada,
Peng Cheng,
Lan Chen,
Youguo Shi,
Kehui Wu,
Sheng Meng,
Baojie Feng
Abstract:
The destructive interference of wavefunctions in a kagome lattice can give rise to topological flat bands (TFBs) with a highly degenerate state of electrons. Recently, TFBs have been observed in several kagome metals, including Fe$_3$Sn$_2$, FeSn, CoSn, and YMn$_6$Sn$_6$. Nonetheless, kagome materials that are both exfoliable and semiconducting are lacking, which seriously hinders their device app…
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The destructive interference of wavefunctions in a kagome lattice can give rise to topological flat bands (TFBs) with a highly degenerate state of electrons. Recently, TFBs have been observed in several kagome metals, including Fe$_3$Sn$_2$, FeSn, CoSn, and YMn$_6$Sn$_6$. Nonetheless, kagome materials that are both exfoliable and semiconducting are lacking, which seriously hinders their device applications. Herein, we show that Nb$_3$Cl$_8$, which hosts a breathing kagome lattice, is gapped out because of the absence of inversion symmetry, while the TFBs survive because of the protection of the mirror reflection symmetry. By angle-resolved photoemission spectroscopy measurements and first-principles calculations, we directly observe the TFB and a moderate band gap in Nb$_3$Cl$_8$. By mechanical exfoliation, we successfully obtain monolayers of Nb$_3$Cl$_8$ and confirm that they are stable under ambient conditions. In addition, our calculations show that monolayers of Nb$_3$Cl$_8$ have a magnetic ground state, thus providing opportunities to study the interplay between geometry, topology, and magnetism.
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Submitted 8 June, 2022; v1 submitted 2 November, 2021;
originally announced November 2021.
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Observation of one-dimensional Dirac fermions in silicon nanoribbons
Authors:
Shaosheng Yue,
Hui Zhou,
Ya Feng,
Yue Wang,
Zhenyu Sun,
Daiyu Geng,
Masashi Arita,
Shiv Kumar,
Kenya Shimada,
Peng Cheng,
Lan Chen,
Yugui Yao,
Sheng Meng,
Kehui Wu,
Baojie Feng
Abstract:
Dirac materials, which feature Dirac cones in the reciprocal space, have been one of the hottest topics in condensed matter physics in the past decade. To date, 2D and 3D Dirac Fermions have been extensively studied, while their 1D counterparts are rare. Recently, Si nanoribbons (SiNRs), which are composed of alternating pentagonal Si rings, have attracted intensive attention. However, the electro…
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Dirac materials, which feature Dirac cones in the reciprocal space, have been one of the hottest topics in condensed matter physics in the past decade. To date, 2D and 3D Dirac Fermions have been extensively studied, while their 1D counterparts are rare. Recently, Si nanoribbons (SiNRs), which are composed of alternating pentagonal Si rings, have attracted intensive attention. However, the electronic structure and topological properties of SiNRs are still elusive. Here, by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy measurements, first-principles calculations, and tight-binding model analysis, we demonstrate the existence of 1D Dirac Fermions in SiNRs. Our theoretical analysis shows that the Dirac cones derive from the armchairlike Si chain in the center of the nanoribbon and can be described by the Su-Schrieffer-Heeger model. These results establish SiNRs as a platform for studying the novel physical properties in 1D Dirac materials.
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Submitted 13 May, 2022; v1 submitted 6 October, 2021;
originally announced October 2021.
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Behavior of gapped and ungapped Dirac cones in an antiferromagnetic topological metal, SmBi
Authors:
Anup Pradhan Sakhya,
Shiv Kumar,
Arindam Pramanik,
Ram Prakash Pandeya,
Rahul Verma,
Bahadur Singh,
Sawani Datta,
Souvik Sasmal,
Rajib Mondal,
Eike F. Schwier,
Kenya Shimada,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In ad…
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We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In addition, ARPES data reveal Dirac cones at $\overlineΓ$ and $\overline{M}$ points within the energy gap of the bulk bands. The Dirac cone at $\overline{M}$ exhibit a distinct Dirac point and is intense in the high photon energy data while the Dirac cone at $\overlineΓ$ is intense at low photon energies. Employing ultra-high-resolution ARPES, we discover destruction of a Fermi surface constituted by the surface states across the Neél temperature of 9 K. Interestingly, the Dirac cone at $\overlineΓ$ is found to be gapped at 15 K and the behavior remains similar across the magnetic transition. These results reveal complex momentum dependent gap formation and fermi surface destruction across magnetic transition in an exotic correlated topological material; the interplay between magnetism and topology in this system calls for ideas beyond existing theoretical models.
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Submitted 25 August, 2022; v1 submitted 25 September, 2021;
originally announced September 2021.
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Spectroscopic Evidence on Realization of a Genuine Topological Nodal Line Semimetal in LaSbTe
Authors:
Yang Wang,
Yuting Qian,
Meng Yang,
Hongxiang Chen,
Cong Li,
Zhiyun Tan,
Yongqing Cai,
Wenjuan Zhao,
Shunye Gao,
Ya Feng,
Shiv Kumar,
Eike F. Schwier,
Lin Zhao,
Hongming Weng,
Youguo Shi,
Gang Wang,
Youting Song,
Yaobo Huang,
Kenya Shimada,
Zuyan Xu,
X. J. Zhou,
Guodong Liu
Abstract:
The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate t…
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The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate the macroscopic physical properties. Although the material realization of nodal line semimetals have been theoretically predicted in numerous compounds, only a few of them have been experimentally verified and the realization of a genuine nodal line semimetal is particularly rare. Here we report the realization of a genuine nodal line semimetal in LaSbTe. We investigated the electronic structure of LaSbTe by band structure calculations and angle-resolved photoemission (ARPES) measurements. Taking spin-orbit coupling into account, our band structure calculations predict that a nodal line is formed in the boundary surface of the Brillouin zone which is robust and lies close to the Fermi level. The Dirac nodes along the X-R line in momentum space are directly observed in our ARPES measurements and the energies of these Dirac nodes are all close to the Fermi level. These results constitute clear evidence that LaSbTe is a genuine nodal line semimetal,providing a new platform to explore for novel phenomena and possible applications associated with the nodal line semimetals.
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Submitted 26 February, 2021;
originally announced February 2021.
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Observation of spin-momentum-layer locking in centrosymmetric BiOI
Authors:
Ke Zhang,
Shixuan Zhao,
Zhanyang Hao,
Shiv Kumar,
Eike. F. Schwier,
Yingjie Zhang,
Hongyi Sun,
Yuan Wang,
Yujie Hao,
Xiaoming Ma,
Cai Liu,
Xiaoxiao Wang,
Koji Miyamoto,
Taichi Okuda,
Chang Liu,
Jiawei Mei,
Kenya Shimada,
Chaoyu Chen,
Qihang Liu
Abstract:
Spin polarization effects in nonmagnetic materials are generally believed as an outcome of spin-orbit coupling provided that the global inversion symmetry is lacking, also known as 'spin-momentum locking'. The recently discovered hidden spin polarization indicates that specific atomic site asymmetry could also induce measurable spin polarization, leading to a paradigm shift to centrosymmetric crys…
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Spin polarization effects in nonmagnetic materials are generally believed as an outcome of spin-orbit coupling provided that the global inversion symmetry is lacking, also known as 'spin-momentum locking'. The recently discovered hidden spin polarization indicates that specific atomic site asymmetry could also induce measurable spin polarization, leading to a paradigm shift to centrosymmetric crystals for potential spintronic applications. Here, combining spin- and angle-resolved photoemission spectroscopy and theoretical calculations, we report distinct spin-layer locking phenomena surrounding different high-symmetry momenta in a centrosymmetric, layered material BiOI. The measured spin is highly polarized along the Brillouin zone boundary, while is almost vanishing around the zone center due to its nonsymmorphic crystal structure. Our work not only demonstrates the existence of hidden spin polarization, but also uncovers the microscopic mechanism of the way spin, momentum and layer locking to each other, shedding lights on the design metrics for future spintronic devices.
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Submitted 29 December, 2020;
originally announced December 2020.
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Observation of quantum spin Hall states in Ta$_2$Pd$_3$Te$_5$
Authors:
Xuguang Wang,
Daiyu Geng,
Dayu Yan,
Wenqi Hu,
Hexu Zhang,
Shaosheng Yue,
Zhenyu Sun,
Shiv Kumar,
Kenya Shimada,
Peng Cheng,
Lan Chen,
Simin Nie,
Zhijun Wang,
Youguo Shi,
Yi-Qi Zhang,
Kehui Wu,
Baojie Feng
Abstract:
Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a few materials, and thus, the search for new 2DTIs is at the forefront of physical and materials science. Here, we report experimental evidence of a 2DTI in the…
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Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a few materials, and thus, the search for new 2DTIs is at the forefront of physical and materials science. Here, we report experimental evidence of a 2DTI in the van der Waals material Ta$_2$Pd$_3$Te$_5$. First-principles calculations show that each monolayer of Ta$_2$Pd$_3$Te$_5$ is a 2DTI with weak interlayer interactions. Combined transport, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy measurements confirm the existence of a band gap at the Fermi level and topological edge states inside the gap. These results demonstrate that Ta$_2$Pd$_3$Te$_5$ is a promising material for fabricating spintronic devices based on the QSH effect.
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Submitted 14 December, 2020;
originally announced December 2020.
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Direct evidence of electron-hole compensation for XMR in topologically trivial YBi
Authors:
Shaozhu Xiao,
Yinxiang Li,
Yong Li,
Xiufu Yang,
Shiju Zhang,
Wei Liu,
Xianxin Wu,
Bin Li,
Masashi Arita,
Kenya Shimada,
Youguo Shi,
Shaolong He
Abstract:
The prediction of topological states in rare earth monopnictide compounds has attracted renewed interest. Extreme magnetoresistance (XMR) has also been observed in several nonmagnetic rare earth monopnictide compounds. The origin of XMR in these compounds could be attributed to several mechanisms, such as topologically nontrivial electronic structures and electron-hole carrier balance. YBi is a ty…
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The prediction of topological states in rare earth monopnictide compounds has attracted renewed interest. Extreme magnetoresistance (XMR) has also been observed in several nonmagnetic rare earth monopnictide compounds. The origin of XMR in these compounds could be attributed to several mechanisms, such as topologically nontrivial electronic structures and electron-hole carrier balance. YBi is a typical rare earth monopnictide exhibiting XMR, and expected to have a nontrivial electronic structure. In this work, we performed a direct investigation of the electronic structure of YBi by combining angle resolved photoemission spectroscopy and theoretical calculations. Our results show that YBi is topologically trivial without the expected band inversion, and they rule out the topological effect as the cause of XMR in YBi. Furthermore, we directly observed perfect electron-hole compensation in the electronic structure of YBi, which could be the primary mechanism accounting for the XMR.
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Submitted 24 November, 2020;
originally announced November 2020.
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Experimental observation of Dirac cones in artificial graphene lattices
Authors:
Shaosheng Yue,
Hui Zhou,
Daiyu Geng,
Zhenyu Sun,
Masashi Arita,
Kenya Shimada,
Peng Cheng,
Lan Chen,
Sheng Meng,
Kehui Wu,
Baojie Feng
Abstract:
Artificial lattices provide a tunable platform to realize exotic quantum devices. A well-known example is artificial graphene (AG), in which electrons are confined in honeycomb lattices and behave as massless Dirac fermions. Recently, AG systems have been constructed by manipulating molecules using scanning tunnelling microscope tips, but the nanoscale size typical for these constructed systems ar…
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Artificial lattices provide a tunable platform to realize exotic quantum devices. A well-known example is artificial graphene (AG), in which electrons are confined in honeycomb lattices and behave as massless Dirac fermions. Recently, AG systems have been constructed by manipulating molecules using scanning tunnelling microscope tips, but the nanoscale size typical for these constructed systems are impossible for practical device applications and insufficient for direct investigation of the electronic structures using angle-resolved photoemission spectroscopy (ARPES). Here, we demonstrate the synthesis of macroscopic AG by self-assembly of C$_{60}$ molecules on metal surfaces. Our theoretical calculations and ARPES measurements directly confirm the existence of Dirac cones at the $K$ ($K^\prime$) points of the Brillouin zone (BZ), in analogy to natural graphene. These results will stimulate ongoing efforts to explore the exotic properties in artificial lattices and provide an important step forward in the realization of novel molecular quantum devices.
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Submitted 30 October, 2020;
originally announced October 2020.
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Superconductivity and Fermi Surface Nesting in the Candidate Dirac Semimetal NbC
Authors:
Dayu Yan,
Daiyu Geng,
Qiang Gao,
Zhihai Cui,
Changjiang Yi,
Ya Feng,
Chunyao Song,
Hailan Luo,
Meng Yang,
Masashi Arita,
Shiv Kumar,
Eike F. Schwier,
Kenya Shimada,
Lin Zhao,
Kehui Wu,
Hongmini Weng,
Lan Chen,
X. J. Zhou,
Zhijun Wang,
Youguo Shi,
Baojie Feng
Abstract:
We report the synthesis of single-crystal NbC, a transition metal carbide with various unusual properties. Transport, magnetic susceptibility, and specific heat measurements demonstrate that NbC is a conventional superconductor with a superconducting transition temperature ($T_c$) of 11.5 K. Our theoretical calculations show that NbC is a type-II Dirac semimetal with strong Fermi surface nesting,…
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We report the synthesis of single-crystal NbC, a transition metal carbide with various unusual properties. Transport, magnetic susceptibility, and specific heat measurements demonstrate that NbC is a conventional superconductor with a superconducting transition temperature ($T_c$) of 11.5 K. Our theoretical calculations show that NbC is a type-II Dirac semimetal with strong Fermi surface nesting, which is supported by our ARPES measurement results. We also observed the superconducting gaps of NbC using angle-resolved photoemission spectroscopy (ARPES) and found some unconventional behaviors. These intriguing superconducting and topological properties, combined with the high corrosion resistance, make NbC an ideal platform for both fundamental research and device applications.
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Submitted 30 October, 2020; v1 submitted 27 October, 2020;
originally announced October 2020.
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Topological electronic structure in the antiferromagnet HoSbTe
Authors:
Shaosheng Yue,
Yuting Qian,
Meng Yang,
Daiyu Geng,
Changjiang Yi,
Shiv Kumar,
Kenya Shimada,
Peng Cheng,
Lan Chen,
Zhijun Wang,
Hongming Weng,
Youguo Shi,
Kehui Wu,
Baojie Feng
Abstract:
Magnetic topological materials, in which the time-reversal symmetry is broken, host various exotic quantum phenomena, including the quantum anomalous Hall effect, axion insulator states, and Majorana fermions. The study of magnetic topological materials is at the forefront of condensed matter physics. Recently, a variety of magnetic topological materials have been reported, such as Mn$_3$Sn, Co…
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Magnetic topological materials, in which the time-reversal symmetry is broken, host various exotic quantum phenomena, including the quantum anomalous Hall effect, axion insulator states, and Majorana fermions. The study of magnetic topological materials is at the forefront of condensed matter physics. Recently, a variety of magnetic topological materials have been reported, such as Mn$_3$Sn, Co$_3$Sn$_2$S$_2$, Fe$_3$Sn$_2$, and MnBi$_2$Te$_4$. Here, we report the observation of a topological electronic structure in an antiferromagnet, HoSbTe, a member of the ZrSiS family of materials, by angle-resolved photoemission spectroscopy measurements and first-principles calculations. We demonstrate that HoSbTe is a Dirac nodal line semimetal when spin-orbit coupling (SOC) is neglected. However, our theoretical calculations show that the strong SOC in HoSbTe fully gaps out the nodal lines and drives the system to a weak topological insulator state, with each layer being a two-dimensional topological insulator. Because of the strong SOC in HoSbTe, the gap is as large as hundreds of meV along specific directions, which is directly observed by our ARPES measurements. The existence of magnetic order and topological properties in HoSbTe makes it a promising material for realization of exotic quantum devices.
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Submitted 7 October, 2020;
originally announced October 2020.
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Half-Magnetic Topological Insulator
Authors:
Ruie Lu,
Hongyi Sun,
Shiv Kumar,
Yuan Wang,
Mingqiang Gu,
Meng Zeng,
Yu-Jie Hao,
Jiayu Li,
Jifeng Shao,
Xiao-Ming Ma,
Zhanyang Hao,
Ke Zhang,
Wumiti Mansuer,
Jiawei Mei,
Yue Zhao,
Cai Liu,
Ke Deng,
Wen Huang,
Bing Shen,
Kenya Shimada,
Eike F. Schwier,
Chang Liu,
Qihang Liu,
Chaoyu Chen
Abstract:
Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi…
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Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi2Te4 surface but not at the opposite surface terminated by triple Bi2Te3 layers. Our angle-resolved photoemission spectroscopy measurements unveil a massive Dirac gap at the MnBi2Te4 surface, and gapless Dirac cone on the other side. Remarkably, the Dirac gap (~28 meV) at MnBi2Te4 surface decreases monotonically with increasing temperature and closes right at the Curie temperature, thereby representing the first smoking-gun spectroscopic evidence of magnetization-induced topological surface gap among all known magnetic topological materials. We further demonstrate theoretically that the half-magnetic topological insulator is desirable to realize the half-quantized surface anomalous Hall effect, which serves as a direct proof of the general concept of axion electrodynamics in condensed matter systems.
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Submitted 9 September, 2020;
originally announced September 2020.
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Magnetic bubbles in an M-type hexagonal ferrite observed by hollow-cone Foucault imaging and small-angle electron diffraction
Authors:
Atsuhiro Kotani,
Hiroshi Nakajima,
Atsushi Kawaguchi,
Yukihiro Fujibayashi,
Kento Uchihashi,
Keiko Shimada,
Ken Harada,
Shigeo Mori
Abstract:
We report hollow-cone imaging and small-angle electron diffraction of nanoscale magnetic textures such as magnetic-striped domains and magnetic bubbles of M-type hexagonal ferrite BaFe$_{10.35}$Sc$_{1.6}$Mg$_{0.05}$O$_{19}$. The advantage of the hollow-cone Foucault method is that magnetic domains with various directions of magnetization can be visualized under an infocus condition. Moreover, the…
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We report hollow-cone imaging and small-angle electron diffraction of nanoscale magnetic textures such as magnetic-striped domains and magnetic bubbles of M-type hexagonal ferrite BaFe$_{10.35}$Sc$_{1.6}$Mg$_{0.05}$O$_{19}$. The advantage of the hollow-cone Foucault method is that magnetic domains with various directions of magnetization can be visualized under an infocus condition. Moreover, the contrast of magnetic domain walls in magnetic bubbles depends on the inclination angle of the illumination beam. The combination of small-angle electron diffraction and hollow-cone Foucault imaging proves that magnetization at domain walls exhibits in-plane directions in the magnetic-striped domains and magnetic bubbles.
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Submitted 28 July, 2020;
originally announced July 2020.
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Orbital Complexity in Intrinsic Magnetic Topological Insulators MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$
Authors:
R. C. Vidal,
H. Bentmann,
J. I. Facio,
T. Heider,
P. Kagerer,
C. I. Fornari,
T. R. F. Peixoto,
T. Figgemeier,
S. Jung,
C. Cacho,
B. Büchner,
J. van den Brink,
C. M. Schneider,
L. Plucinski,
E. F. Schwier,
K. Shimada,
M. Richter,
A. Isaeva,
F. Reinert
Abstract:
Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon…
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Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon-energy-dependent ARPES measurements with calculations based on density functional theory, we unveil complex momentum-dependent orbital and spin textures in the surface electronic structure and disentangle topological from trivial surface bands. We find that the Dirac-cone dispersion of the topologial surface state is strongly perturbed by hybridization with valence-band states for Bi$_2$Te$_3$-terminated surfaces but remains preserved for MnBi$_2$Te$_4$-terminated surfaces. Our results firmly establish the topologically non-trivial nature of these magnetic van der Waals materials and indicate that the possibility of realizing a quantized anomalous Hall conductivity depends on surface termination.
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Submitted 7 May, 2021; v1 submitted 15 July, 2020;
originally announced July 2020.
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Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system
Authors:
Turgut Yilmaz,
Xiao Tong,
Zhongwei Dai,
Jerzy T. Sadowski,
Eike F. Schwier,
Kenya Shimada,
Sooyeon Hwang,
Kim Kisslinger,
Konstantine Kaznatcheev,
Elio Vescovo,
Boris Sinkovic
Abstract:
Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible…
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Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moiré patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron do**. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials.
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Submitted 23 June, 2020;
originally announced June 2020.
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Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones
Authors:
Daiyu Geng,
Kejun Yu,
Shaosheng Yue,
** Cao,
Wenbin Li,
Dashuai Ma,
Chaoxi Cui,
Masashi Arita,
Shiv Kumar,
Eike F. Schwier,
Kenya Shimada,
Peng Cheng,
Lan Chen,
Kehui Wu,
Yugui Yao,
Baojie Feng
Abstract:
Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several D…
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Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials.
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Submitted 22 April, 2020;
originally announced April 2020.
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Spectroscopic realization of large surface gap in a doped magnetic topological insulator
Authors:
Xiao-Ming Ma,
Yufei Zhao,
Ke Zhang,
Rui'e Lu,
Jiayu Li,
Qiushi Yao,
Jifeng Shao,
Xuefeng Wu,
Meng Zeng,
Yu-Jie Hao,
Shiv Kumar,
Zhanyang Hao,
Yuan Wang,
Xiang-Rui Liu,
Huiwen Shen,
Hongyi Sun,
Jiawei Mei,
Koji Miyamoto,
Taichi Okuda,
Masashi Arita,
Eike F. Schwier,
Kenya Shimada,
Ke Deng,
Cai Liu,
Yue Zhao
, et al. (3 additional authors not shown)
Abstract:
Realization of the quantum anomalous Hall effect and axion electrodynamics in topological materials are among the paradigmatic phenomena in condensed matter physics. Recently, signatures of both phases are observed to exist in thin films of MnBi$_2$Te$_4$, a stoichiometric antiferromagnetic topological insulator. Direct evidence of the bulk topological magnetoelectric response in an axion insulato…
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Realization of the quantum anomalous Hall effect and axion electrodynamics in topological materials are among the paradigmatic phenomena in condensed matter physics. Recently, signatures of both phases are observed to exist in thin films of MnBi$_2$Te$_4$, a stoichiometric antiferromagnetic topological insulator. Direct evidence of the bulk topological magnetoelectric response in an axion insulator requires an energy gap at its topological surface state (TSS). However, independent spectroscopic experiments revealed that such a surface gap is absent, or much smaller than previously thought, in MnBi$_2$Te$_4$. Here, we utilize angle resolved photoemission spectroscopy and density functional theory calculations to demonstrate that a sizable TSS gap unexpectedly exists in Sb-doped MnBi$_2$Te$_4$. This gap is found to be topologically nontrivial, insensitive to the bulk antiferromagnetic-paramagnetic transition, while enlarges along with increasing Sb concentration. Our work shows that Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ is a potential platform to observe the key features of the high-temperature axion insulator state, such as the topological magnetoelectric responses and half-integer quantum Hall effects.
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Submitted 20 April, 2020;
originally announced April 2020.
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Distinct Topological Surface States on the Two Terminations of MnBi$_4$Te$_7$
Authors:
Xuefeng Wu,
Jiayu Li,
Xiao-Ming Ma,
Yu Zhang,
Yuntian Liu,
Chun-Sheng Zhou,
Jifeng Shao,
Qiaoming Wang,
Yu-Jie Hao,
Yue Feng,
Eike F. Schwier,
Shiv Kumar,
Hongyi Sun,
Pengfei Liu,
Kenya Shimada,
Koji Miyamoto,
Taichi Okuda,
Kedong Wang,
Maohai Xie,
Chaoyu Chen,
Qihang Liu,
Chang Liu,
Yue Zhao
Abstract:
The recent discovered intrinsic magnetic topological insulator MnBi2Te4 have been met with unusual success in hosting emergent phenomena such as the quantum anomalous Hall effect and the axion insulator states. However, the surface-bulk correspondence of the Mn-Bi-Te family, composed by the superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3 ...) layered structure, remains intriguing but elusive.…
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The recent discovered intrinsic magnetic topological insulator MnBi2Te4 have been met with unusual success in hosting emergent phenomena such as the quantum anomalous Hall effect and the axion insulator states. However, the surface-bulk correspondence of the Mn-Bi-Te family, composed by the superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3 ...) layered structure, remains intriguing but elusive. Here, by using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) techniques, we unambiguously assign the two distinct surface states of MnBi4Te7 (n = 1) to the quintuple-layer (QL) Bi2Te3 termination and the septuple-layer (SL) MnBi2Te4 termination, respectively. A comparison of the experimental observations with theoretical calculations reveals the diverging topological behaviors, especially the hybridization effect between magnetic and nonmagnetic layers, on the two terminations: a gap on the QL termination originating from the topological surface states of the QL hybridizing with the bands of the beneath SL, and a gapless Dirac-cone band structure on the SL termination with time-reversal symmetry. The quasi-particle interference patterns further confirm the topological nature of the surface states for both terminations, continuing far above the Fermi energy. The QL termination carries a spin-helical Dirac state with hexagonal war**, while at the SL termination, a strongly canted helical state from the surface lies between a pair of Rashba-split states from its neighboring layer. Our work elucidates an unprecedented hybridization effect between the building blocks of the topological surface states, and also reveals the termination-dependent time-reversal symmetry breaking in a magnetic topological insulator, rendering an ideal platform to realize the half-integer quantum Hall effect and relevant quantum phenomena.
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Submitted 1 February, 2020;
originally announced February 2020.
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Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2
Authors:
Wenjuan Zhao,
Xieyu Zhou,
Dayu Yan,
Yuan Huang,
Cong Li,
Qiang Gao,
Hongtao Rong,
Yongqing Cai,
Eike F. Schwier,
Dianxing Ju,
Cheng Shen,
Yang Wang,
Yu Xu,
Wei Ji,
Youguo Shi,
Lin Zhao,
Lihong Bao,
Qingyan Wang,
Kenya Shimada,
Xutang Tao,
Hongjun Gao,
Zuyan Xu,
Xingjiang Zhou,
Guodong Liu
Abstract:
The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar v…
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The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.
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Submitted 16 January, 2020;
originally announced January 2020.
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Hybridization-Induced Gapped and Gapless States on the Surfaces of Magnetic Topological Insulators
Authors:
Xiao-Ming Ma,
Zhongjia Chen,
Eike F. Schwier,
Yang Zhang,
Yu-Jie Hao,
Rui'e Lu,
Jifeng Shao,
Yuanjun **,
Meng Zeng,
Xiang-Rui Liu,
Zhanyang Hao,
Ke Zhang,
Wumiti Mansuer,
Shiv Kumar,
Chunyao Song,
Yuan Wang,
Boyan Zhao,
Cai Liu,
Ke Deng,
Jiawei Mei,
Kenya Shimada,
Yue Zhao,
Xingjiang Zhou,
Bing Shen,
Wen Huang
, et al. (3 additional authors not shown)
Abstract:
The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have re…
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The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have revealed that all terminations exhibit (nearly) gapless topological surface states (TSSs) within the AFM state, violating the definition of the AFM TI, as the surfaces being studied should be -breaking and opening a gap. Here we explain this curious paradox using a surface-bulk band hybridization picture. Combining ARPES and first-principles calculations, we prove that only an apparent gap is opened by hybridization between TSSs and bulk bands. The observed (nearly) gapless features are consistently reproduced by tight-binding simulations where TSSs are coupled to a Rashba-split bulk band. The Dirac-cone-like spectral features are actually of bulk origin, thus not sensitive to the-breaking at the AFM surfaces. This picture explains the (nearly) gapless behaviour found in both Bi2Te3- and MnBi2Te4-terminated surfaces and is applicable to all terminations of MnBi2nTe3n+1 family. Our findings highlight the role of band hybridization, superior to magnetism in this case, in sha** the general surface band structure in magnetic topological materials for the first time.
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Submitted 31 December, 2019;
originally announced December 2019.
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Spectroscopic evidence for electron-boson coupling in electron-doped Sr$_2$IrO$_4$
Authors:
Yong Hu,
Xiang Chen,
S. -T. Peng,
C. Lane,
M. Matzelle,
Z. -L. Sun,
M. Hashimoto,
D. -H. Lu,
E. F. Schwier,
M. Arita,
T. Wu,
R. S. Markiewicz,
K. Shimada,
X. -H. Chen,
Z. -X. Shen,
A. Bansil,
S. D. Wilson,
J. -F. He
Abstract:
The pseudogap, d-wave superconductivity and electron-boson coupling are three intertwined key ingredients in the phase diagram of the cuprates. Sr$_2$IrO$_4$ is a 5d-electron counterpart of the cuprates in which both the pseudogap and a d-wave instability have been observed. Here, we report spectroscopic evidence for the presence of the third key player in electron-doped Sr$_2$IrO$_4$: electron-bo…
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The pseudogap, d-wave superconductivity and electron-boson coupling are three intertwined key ingredients in the phase diagram of the cuprates. Sr$_2$IrO$_4$ is a 5d-electron counterpart of the cuprates in which both the pseudogap and a d-wave instability have been observed. Here, we report spectroscopic evidence for the presence of the third key player in electron-doped Sr$_2$IrO$_4$: electron-boson coupling. A kink in nodal dispersion is observed with an energy scale of ~50 meV. The strength of the kink changes with do**, but the energy scale remains the same. These results provide the first noncuprate platform for exploring the relationship between the pseudogap, d-wave instability and electron-boson coupling in doped Mott insulators.
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Submitted 11 December, 2019;
originally announced December 2019.
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In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$
Authors:
Yang Zhang,
Ke Deng,
Xiao Zhang,
Meng Wang,
Yuan Wang,
Cai Liu,
Jia-Wei Mei,
Shiv Kumar,
Eike F. Schwier,
Kenya Shimada,
Chaoyu Chen,
Bing Shen
Abstract:
Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields appli…
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Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields applied within the $ab$-plane while are absent for fields parallel to the $c$-axis. Anisotropic magnetic phase diagrams are observed and the orientation of the ground magnetic moment is found to be within the $ab$-plane. The magnetoresistivity for EuIn$_2$As$_2$ behaves non-monotonic as a function of field strength. It exhibits angular dependent evolving due to field-driven and temperature-driven magnetic states. These results indicate that the magnetic states of EuIn$_2$As$_2$ strongly affect the transport properties as well as the topological nature.
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Submitted 5 November, 2019;
originally announced November 2019.
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Role of a higher dimensional interaction in stabilizing charge density waves in quasi-1D NbSe$_3$ revealed by angle-resolved photoemission spectroscopy
Authors:
Christopher W. Nicholson,
Eike F. Schwier,
Kenya Shimada,
Helmut Berger,
Moritz Hoesch,
Christophe Berthod,
Claude Monney
Abstract:
We revisit charge density wave (CDW) behavior in the archetypal quasi-one-dimensional (quasi-1D) material NbSe$_3$ by high-resolution angle-resolved photoemission spectroscopy measurements utilizing a microfocused laser with a photon energy of 6.3 eV. We present a detailed view of the electronic structure of this complex multiband system and unambiguously resolve CDW gaps at the Fermi level (…
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We revisit charge density wave (CDW) behavior in the archetypal quasi-one-dimensional (quasi-1D) material NbSe$_3$ by high-resolution angle-resolved photoemission spectroscopy measurements utilizing a microfocused laser with a photon energy of 6.3 eV. We present a detailed view of the electronic structure of this complex multiband system and unambiguously resolve CDW gaps at the Fermi level ($E_F$). By employing a tight-binding model, we argue that these gaps are the result of interband coupling between electronic states that reside predominantly on distinct 1D chains within the material. Two such localized states are found to couple to an electronic state that extends across multiple 1D chains, highlighting the importance of a higher-dimensional interaction in stabilizing the CDW ordering in this material. In addition, the temperature evolution of intrachain gaps caused by the CDW periodicities far below $E_F$ deviate from the behavior expected for a Peierls-type mechanism driven by nesting; the upper and lower bands of the renormalized CDW dispersions maintain a fixed peak-to-peak distance while the gaps are gradually removed at higher temperatures. This points toward a gradual loss of long-range phase coherence as the dominant effect in reducing the CDW order parameter, which may correspond to the loss of coherence between the coupled chains. Furthermore, one of the gaps is observed above the bulk and surface CDW transition temperatures, implying the persistence of short-range incoherent CDW order. The influence of such higher-dimensional interactions likely plays an important role in a range of low-dimensional systems.
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Submitted 21 January, 2020; v1 submitted 1 November, 2019;
originally announced November 2019.
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Rashba-like spin splitting along three momentum directions in trigonal layered PtBi2
Authors:
Ya Feng,
Qi Jiang,
Baojie Feng,
Meng Yang,
Tao Xu,
Wen**g Liu,
Xiufu Yang,
Masashi Arita,
Eike F. Schwier,
Kenya Shimada,
Harald O. Jeschke,
Ronny Thomale,
Youguo Shi,
Xianxin Wu,
Shaozhu Xiao,
Shan Qiao,
Shaolong He
Abstract:
Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for spintronics applications since it allows for flexible manipulation of spin current by external electric fields. Here, we report the discovery of a giant anisotropic…
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Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for spintronics applications since it allows for flexible manipulation of spin current by external electric fields. Here, we report the discovery of a giant anisotropic Rashba-like spin splitting along three momentum directions (3D Rashba-like spin splitting) with a helical spin polarization around the M points in the Brillouin zone of trigonal layered PtBi2. Due to its inversion asymmetry and reduced symmetry at the M point, Rashba-type as well as Dresselhaus-type SOC cooperatively yield a 3D spin splitting with alpha~ 4.36 eVA in PtBi2. The experimental realization of 3D Rashba-like spin splitting not only has fundamental interests but also paves the way to the future exploration of a new class of material with unprecedented functionalities for spintronics applications.
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Submitted 28 October, 2019;
originally announced October 2019.
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Gapless surface Dirac cone in antiferromagnetic topological insulator MnBi$_2$Te$_4$
Authors:
Yu-Jie Hao,
Pengfei Liu,
Yue Feng,
Xiao-Ming Ma,
Eike F. Schwier,
Masashi Arita,
Shiv Kumar,
Chaowei Hu,
Rui'e Lu,
Meng Zeng,
Yuan Wang,
Zhanyang Hao,
Hongyi Sun,
Ke Zhang,
Jiawei Mei,
Ni Ni,
Liusuo Wu,
Kenya Shimada,
Chaoyu Chen,
Qihang Liu,
Chang Liu
Abstract:
The recent discovered antiferromagnetic topological insulators in Mn-Bi-Te family with intrinsic magnetic ordering have rapidly drawn broad interest since its cleaved surface state is believed to be gapped, hosting the unprecedented axion states with half-integer quantum Hall effect. Here, however, we show unambiguously by using high-resolution angle-resolved photoemission spectroscopy that a gapl…
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The recent discovered antiferromagnetic topological insulators in Mn-Bi-Te family with intrinsic magnetic ordering have rapidly drawn broad interest since its cleaved surface state is believed to be gapped, hosting the unprecedented axion states with half-integer quantum Hall effect. Here, however, we show unambiguously by using high-resolution angle-resolved photoemission spectroscopy that a gapless Dirac cone at the (0001) surface of MnBi$_2$Te$_4$ exists between the bulk band gap. Such unexpected surface state remains unchanged across the bulk Néel temperature, and is even robust against severe surface degradation, indicating additional topological protection. Through symmetry analysis and $\textit{ab}$-$\textit{initio}$ calculations we consider different types of surface reconstruction of the magnetic moments as possible origins giving rise to such linear dispersion. Our results reveal that the intrinsic magnetic topological insulator hosts a rich platform to realize various topological phases such as topological crystalline insulator and time-reversal-preserved topological insulator, by tuning the magnetic configurations.
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Submitted 9 October, 2019; v1 submitted 8 July, 2019;
originally announced July 2019.
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Pressure induced Superconductivity and location of Fermi energy at Dirac point in BiSbTe3
Authors:
Vinod K. Gangwar,
Shiv Kumar,
Mahima Singh,
Labanya Ghosh,
Zhang Yufeng,
Prashant Shahi,
Swapnil Patil,
Eike F. Schwier,
Kenya Shimada,
Yoshiya Uwatoko,
Sandip Chatterjee
Abstract:
We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface st…
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We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface state in BiSbTe3 with a Dirac Point situated exactly at the Fermi level. Additionally, superconductivity emerges under pressure of 8 GPa with a critical temperature of ~2.5 K. With further increase of pressure, the superconducting transition temperature (Tc) increases and at 14 GPa it shows the maximum Tc (~3.3 K).
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Submitted 25 June, 2019;
originally announced June 2019.
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Electronic structure and $H$-$T$ phase diagram of Eu(Fe$_{1-x}$Rh$_x$)$_2$As$_2$
Authors:
Shaozhu Xiao,
Darren C. Peets,
Wei Liu,
Shiju Zhang,
Ya Feng,
Wen-He Jiao,
Guang-Han Cao,
Eike F. Schwier,
Kenya Shimada,
Cong Li,
Xingjiang Zhou,
Shaolong He
Abstract:
The iron-based superconductors represent a promising platform for high-temperature superconductivity, but the interactions underpinning their pairing present a puzzle. The EuFe$_2$As$_2$ family is unique among these materials for having magnetic order which onsets within the superconducting state, just below the superconducting transition. Superconductivity and magnetic order are normally antagoni…
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The iron-based superconductors represent a promising platform for high-temperature superconductivity, but the interactions underpinning their pairing present a puzzle. The EuFe$_2$As$_2$ family is unique among these materials for having magnetic order which onsets within the superconducting state, just below the superconducting transition. Superconductivity and magnetic order are normally antagonistic and often vie for the same unpaired electrons, but in this family the magnetism arises from largely localized Eu moments and they coexist, with the competition between these evenly-matched opponents leading to reentrant superconducting behavior. To help elucidate the physics in this family and the interactions between the magnetic order and superconductivity, we investigate the $H$--$T$ phase diagram near optimal Rh do** through specific heat, resistivity, and magnetization measurements, and study the electronic structure by angular-resolved photoemission spectroscopy. The competition between the Eu and FeAs layers may offer a route to directly accessing the electronic structure under effective magnetic fields via ARPES, which is ordinarily a strictly zero-field technique.
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Submitted 1 August, 2019; v1 submitted 27 May, 2019;
originally announced May 2019.
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Superstructure-induced splitting of Dirac cones in silicene
Authors:
B. Feng,
H. Zhou,
Y. Feng,
H. Liu,
S. He,
I. Matsuda,
L. Chen,
E. F. Schwier,
K. Shimada,
S. Meng,
K. Wu
Abstract:
Atomic scale engineering of two-dimensional materials could create devices with rich physical and chemical properties. External periodic potentials can enable the manipulation of the electronic band structures of materials. A prototypical system is 3x3-silicene/Ag(111), which has substrate-induced periodic modulations. Recent angle-resolved photoemission spectroscopy measurements revealed six Dira…
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Atomic scale engineering of two-dimensional materials could create devices with rich physical and chemical properties. External periodic potentials can enable the manipulation of the electronic band structures of materials. A prototypical system is 3x3-silicene/Ag(111), which has substrate-induced periodic modulations. Recent angle-resolved photoemission spectroscopy measurements revealed six Dirac cone pairs at the Brillouin zone boundary of Ag(111), but their origin remains unclear [Proc. Natl. Acad. Sci. USA 113, 14656 (2016)]. We used linear dichroism angle-resolved photoemission spectroscopy, the tight-binding model, and first-principles calculations to reveal that these Dirac cones mainly derive from the original cones at the K (K') points of free-standing silicene. The Dirac cones of free-standing silicene are split by external periodic potentials that originate from the substrate-overlayer interaction. Our results not only confirm the origin of the Dirac cones in the 3x3-silicene/Ag(111) system, but also provide a powerful route to manipulate the electronic structures of two-dimensional materials.
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Submitted 31 January, 2019;
originally announced January 2019.
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Room temperature large spontaneous exchange bias in hard-soft antiferromagnetic composite BiFeO3-TbMnO3
Authors:
Prince Kr. Gupta,
Surajit Ghosh,
Shiv Kumar,
Arkadeb Pal,
Rahul Singh,
Abhishek Singh,
Somnath Roy,
Eike F. Schwier,
Masahiro Sawada,
Takeshi Matsumura,
Kenya Shimada,
Hong-Ji Lin,
Yi-Ying Chin,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
We report the presence of giant spontaneous exchange bias (HSEB) in a hard and soft antiferromagnetic composite of BiFeO3-TbMnO3 (BFO-TMO in 7:3 and 8:2 ratio). The HSEB varies between 5-778Oe, but persists up to room temperature with a maximum near a spin reorientation transition temperature observed from magnetization vs. temperature measurement in Zero-field cooled (ZFC) and Field cooled (FC) m…
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We report the presence of giant spontaneous exchange bias (HSEB) in a hard and soft antiferromagnetic composite of BiFeO3-TbMnO3 (BFO-TMO in 7:3 and 8:2 ratio). The HSEB varies between 5-778Oe, but persists up to room temperature with a maximum near a spin reorientation transition temperature observed from magnetization vs. temperature measurement in Zero-field cooled (ZFC) and Field cooled (FC) modes. Isothermal remnant magnetization measurements at room temperature indicate the presence of an interfacial layer of a 2 dimensional dilute antiferromagnet in a field (2D DAFF). A stable value of the exchange bias has been observed via training effect measurements which signify the role of interfacial exchange coupling in the system. Based on the experimental results we explain the presence of the giant spontaneous exchange bias on the basis of a strong strain-mediated magnetoelectriccoupling induced exchange interaction and the creation of 2D DAFF layer at the interface. Theproperties of this layer are defined by canting and pinning of BFO spins at the interface with TMO due to Fe and Mn interaction. X-ray Magnetic Circular Dichroism (XMCD) confirms the presence of canted antiferromagnetic ordering of BiFeO3, charge transfer between Mn ions and different magnetically coupled layers which play vital role in getting the exchange bias.
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Submitted 8 January, 2019;
originally announced January 2019.
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Discovery of Weyl nodal lines in a single-layer ferromagnet
Authors:
B. Feng,
R. -W. Zhang,
Y. Feng,
B. Fu,
S. Wu,
K. Miyamoto,
S. He,
L. Chen,
K. Wu,
K. Shimada,
T. Okuda,
Y. Yao
Abstract:
Two-dimensional (2D) materials have attracted great attention and spurred rapid development in both fundamental research and device applications. The search for exotic physical properties, such as magnetic and topological order, in 2D materials could enable the realization of novel quantum devices and is therefore at the forefront of materials science. Here, we report the discovery of two-fold deg…
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Two-dimensional (2D) materials have attracted great attention and spurred rapid development in both fundamental research and device applications. The search for exotic physical properties, such as magnetic and topological order, in 2D materials could enable the realization of novel quantum devices and is therefore at the forefront of materials science. Here, we report the discovery of two-fold degenerate Weyl nodal lines in a 2D ferromagnetic material, a single-layer gadolinium-silver compound, based on combined angle-resolved photoemission spectroscopy measurements and theoretical calculations. These Weyl nodal lines are symmetry protected and thus robust against external perturbations. The coexistence of magnetic and topological order in a 2D material is likely to inform ongoing efforts to devise and realize novel nanospintronic devices.
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Submitted 5 January, 2019;
originally announced January 2019.
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B-site spin-state and anti-site disorder driven multiple-magnetic phases: Griffiths phase, re-entrant cluster glass and exchange bias in double perovskite Pr$_2$CoFeO$_6$
Authors:
Arkadeb Pal,
P. Singh,
Shiv Kumar,
S. Ghosh,
Sudip Kumar Saha,
Manoranjan Kumar,
Amitabh Das,
Eike F. Schwier,
Masahiro Sawada,
Kenya Shimada,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
We report the comprehensive experimental results identifying the magnetic spin ordering and the magnetization dynamics of a double perovskite Pr2CoFeO6 by employing the (dc and ac) magnetization, powder neutron diffraction (NPD) and X-ray magnetic circular dichroism (XMCD) techniques. X-ray diffraction and neutron diffraction studies revealed that Pr2CoFeO6 adopts a B-site disordered orthorhombic…
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We report the comprehensive experimental results identifying the magnetic spin ordering and the magnetization dynamics of a double perovskite Pr2CoFeO6 by employing the (dc and ac) magnetization, powder neutron diffraction (NPD) and X-ray magnetic circular dichroism (XMCD) techniques. X-ray diffraction and neutron diffraction studies revealed that Pr2CoFeO6 adopts a B-site disordered orthorhombic structure with space group Pnma. Additionally, ab initio band structure calculations performed on this system suggested an insulating anti-ferromagnetic (Fe-Fe) ground state. Magnetometry study showed the system to possess a spectrum of interesting magnetic phases including long range antiferromagnetic (canted) spin ordering (TN ~269 K), Griffiths phase, re-entrant cluster glass (RCG) (TG~ 34 K) and exchange bias. However, the NPD study divulged the exhibition of a long range G-type (below TN ~269 K) of spin ordering by Fe spins. Spin dynamics study by ac susceptibility technique confirmed the system possessing long range ordering at higher temperatureundergoes a RCG transition at ~34 K. Existence of Griffiths phase was confirmed by non-analytic field variation of magnetization and Heisenberg type temporal spin relaxation above long range ordering temperature TN ~269 K. The anti-site disorder related to the B-sites (Co/Fe) is found to be the main driving force forthe observed multiple magnetic phases. Furthermore, the electronic structure probed by the X-ray absorption spectroscopy (XAS) study suggested a nominal valance state of +3 for both of the B-site ions (Co/Fe) which in turn triggered the anti-site disorder in the system. Magnetic, XRD, NPD and XAS analysis yielded a low spin state (LS) for the Co3+ ions. The random non-magnetic dilution of magnetic Fe3+ (HS) ions by Co3+ (LS) ions essentially played a crucial role in manifesting the magnetic properties of the system.
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Submitted 23 October, 2018;
originally announced October 2018.
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Electronic structure by X-ray absorption spectroscopy and observation offield induced unusually slowspin relaxation from magnetic properties in pyrochlore Eu$_{2-x}$Fe$_x$Ti$_2$O$_7$
Authors:
Arkadeb Pal,
Surajit Ghosh,
Shiv Kumar,
Eike F. Schwier,
Masahiro Sawada,
Kenya Shimada,
Mukul Gupta,
D. M. Phase,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
X-ray absorption spectroscopy (XAS) as well as x-ray magnetic circular dichroism (XMCD) and magnetization of hybrid pyrochlore Eu2-xFexTi2O7 were investigated, where the rare earth Eu (4f) was replaced with transition metal Fe (3d) to introduce competing 4f-3d interactions. It is confirmed that the valence states of Eu and Fe ions are formally trivalent while that of Ti ions are tetravalent (3d0).…
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X-ray absorption spectroscopy (XAS) as well as x-ray magnetic circular dichroism (XMCD) and magnetization of hybrid pyrochlore Eu2-xFexTi2O7 were investigated, where the rare earth Eu (4f) was replaced with transition metal Fe (3d) to introduce competing 4f-3d interactions. It is confirmed that the valence states of Eu and Fe ions are formally trivalent while that of Ti ions are tetravalent (3d0). The analysis yielded that the tetravalent Ti ions occupy octahedral sites with distorted Oh symmetry which is triggered by the presence of vacant 8a anionic site adjacent to TiO6 octahedra. Further study with Fe do** revealed that it essentially reduces the octahedral distortion by introducing anionic disorder (migration of 48f oxygen ions to 8a site). Analysis of O K edge XAS spectra further confirmed the Fe substitution causing the systematic change in the ligand (O2-) coordination of the Ti4+ cations. On the other hand, a new field induced transition (with Fe do**) at low temperature T* (4 K<T*< 8 K) in ac susceptibility with unusually slow spin relaxation was observed. The transition shifted towards higher temperatures both with increasing applied field and Fe concentration. However, the single ion spin freezing (Tf ~35 K) appears to be suppressed with Fe substitution. Interestingly, small amount of Fe3+ ion substitution showed significant enhancement in the dc magnetization at lower temperatures (<100 K). Analysis further indicated rise of dipolar FM exchange interaction with Fe do**.
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Submitted 23 October, 2018;
originally announced October 2018.
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Evidence for quasi-one-dimensional charge density wave in CuTe by angle-resolved photoemission spectroscopy
Authors:
Kenan Zhang,
Xiaoyu Liu,
Haoxiong Zhang,
Ke Deng,
Mingzhe Yan,
Wei Yao,
Mingtian Zheng,
Eike F. Schwier,
Kenya Shimada,
Jonathan D. Denlinger,
Yang Wu,
Wenhui Duan,
Shuyun Zhou
Abstract:
We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron do** through in situ p…
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We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron do** through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon coupling play important roles in the emergence of the CDW.
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Submitted 28 November, 2018; v1 submitted 18 October, 2018;
originally announced October 2018.
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Applications for ultimate spatial resolution in LASER based $μ$-ARPES: A FeSe case study
Authors:
E. F. Schwier,
H. Takita,
W. Mansur,
A. Ino,
M. Hoesch,
M. D. Watson,
A. A. Haghighirad,
K. Shimada
Abstract:
Combining Angle resolved photoelectron spectroscopy (ARPES) and a $μ$-focused Laser, we have performed scanning ARPES microscopy measurements of the domain population within the nematic phase of FeSe single crystals. We are able to demonstrate a variation of the domain population density on a scale of a few 10 $μ$m while constraining the upper limit of the single domain size to less than 5 $μm$. T…
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Combining Angle resolved photoelectron spectroscopy (ARPES) and a $μ$-focused Laser, we have performed scanning ARPES microscopy measurements of the domain population within the nematic phase of FeSe single crystals. We are able to demonstrate a variation of the domain population density on a scale of a few 10 $μ$m while constraining the upper limit of the single domain size to less than 5 $μm$. This experiment serves as a demonstration of how combining the advantages of high resolution Laser ARPES and an ultimate control over the spatial dimension can improve investigations of materials by reducing the cross contamination of spectral features of different domains.
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Submitted 21 June, 2018;
originally announced June 2018.
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Disorder quenching of the Charge Density Wave in ZrTe3
Authors:
Moritz Hoesch,
Liam Gannon,
Kenya Shimada,
Benjamin Parrett,
Matthew D. Watson,
Timur K. Kim,
Xiangde Zhu,
Cedomir Petrovic
Abstract:
The charge density wave (CDW) in ZrTe3 is quenched in samples with small amount of Te iso-electronically substituted by Se. Using angle-resolved photoemission spectroscopy we observe subtle changes in the electronic band dispersions and Fermi surfaces on Se substitution. The scattering rates are substantially increased, in particular for the large three-dimensional Fermi surface sheet. The quasi-o…
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The charge density wave (CDW) in ZrTe3 is quenched in samples with small amount of Te iso-electronically substituted by Se. Using angle-resolved photoemission spectroscopy we observe subtle changes in the electronic band dispersions and Fermi surfaces on Se substitution. The scattering rates are substantially increased, in particular for the large three-dimensional Fermi surface sheet. The quasi-one-dimensional band is unaffected by the substitution and still shows a gap at low temperature, which starts to open from room temperature. The detailed temperature dependence reveals that the long-range order is absent in the electronic states as in the periodic lattice distortion. The competition between superconductivity and CDW is thus linked to the suppression of long-range order of the CDW.
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Submitted 9 December, 2017;
originally announced December 2017.
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Experimental observation of node-line-like surface states in LaBi
Authors:
Baojie Feng,
** Cao,
Meng Yang,
Ya Feng,
Shilong Wu,
Botao Fu,
Masashi Arita,
Koji Miyamoto,
Shaolong He,
Kenya Shimada,
Youguo Shi,
Taichi Okuda,
Yugui Yao
Abstract:
In a Dirac nodal line semimetal, the bulk conduction and valence bands touch at extended lines in the Brillouin zone. To date, most of the theoretically predicted and experimentally discovered nodal lines derive from the bulk bands of two- and three-dimensional materials. Here, based on combined angle-resolved photoemission spectroscopy measurements and first-principles calculations, we report the…
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In a Dirac nodal line semimetal, the bulk conduction and valence bands touch at extended lines in the Brillouin zone. To date, most of the theoretically predicted and experimentally discovered nodal lines derive from the bulk bands of two- and three-dimensional materials. Here, based on combined angle-resolved photoemission spectroscopy measurements and first-principles calculations, we report the discovery of node-line-like surface states on the (001) surface of LaBi. These bands derive from the topological surface states of LaBi and bridge the band gap opened by spin-orbit coupling and band inversion. Our first-principles calculations reveal that these "nodal lines" have a tiny gap, which is beyond typical experimental resolution. These results may provide important information to understand the extraordinary physical properties of LaBi, such as the extremely large magnetoresistance and resistivity plateau.
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Submitted 20 February, 2018; v1 submitted 29 November, 2017;
originally announced November 2017.
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Unusual coexistence of negative/positive charge-transfer in mixed-valence Na$_x$Ca$_{1-x}$Cr$_2$O$_4$
Authors:
M. Taguchi,
H. Yamaoka,
Y. Yamamoto,
H. Sakurai,
N. Tsujii,
M. Sawada,
H. Daimon,
K. Shimada,
J. Mizuki
Abstract:
We have investigated the electronic structure of Na$_x$Ca$_{1-x}$Cr$_2$O$_4$ using x-ray absorption spectroscopy together with Anderson impurity model calculations with full multiplets. We show Na$_x$Ca$_{1-x}$Cr$_2$O$_4$ taking a novel mixed-valence electronic state in which the positive charge-transfer (CT) and the negative self-doped states coexist. While CaCr$_2$O$_4$ (one end member) exhibits…
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We have investigated the electronic structure of Na$_x$Ca$_{1-x}$Cr$_2$O$_4$ using x-ray absorption spectroscopy together with Anderson impurity model calculations with full multiplets. We show Na$_x$Ca$_{1-x}$Cr$_2$O$_4$ taking a novel mixed-valence electronic state in which the positive charge-transfer (CT) and the negative self-doped states coexist. While CaCr$_2$O$_4$ (one end member) exhibits a typical CT nature with strong covalent character, Na substitution causes a self-doped state with an oxygen hole. In NaCr$_2$O$_4$ (the other end member), positive CT and negative self-doped states coexist with equal weight. This unusual electronic state is in sharp contrast to the conventional mixed-valence description, in which the ground state can be described by the mixture of Cr$^{3+}$ ($3d^3$) and Cr$^{4+}$ ($3d^2$).
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Submitted 24 May, 2017;
originally announced May 2017.
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Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si
Authors:
Baojie Feng,
Botao Fu,
Shusuke Kasamatsu,
Suguru Ito,
Peng Cheng,
Cheng-Cheng Liu,
Ya Feng,
Shilong Wu,
Sanjoy K. Mahatha,
Polina Sheverdyaeva,
Paolo Moras,
Masashi Arita,
Osamu Sugino,
Tai-Chang Chiang,
Kenya Shimada,
Koji Miyamoto,
Taichi Okuda,
Kehui Wu,
Lan Chen,
Yugui Yao,
Iwao Matsuda
Abstract:
Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, Zr…
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Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices.
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Submitted 17 August, 2017; v1 submitted 29 November, 2016;
originally announced November 2016.
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Observation of a Hidden Hole-Like Band Approaching the Fermi Level in K-Doped Iron Selenide Superconductor
Authors:
Masanori Sunagawa,
Kensei Terashima,
Takahiro Hamada,
Hirokazu Fujiwara,
Tetsushi Fukura,
Aya Takeda,
Masashi Tanaka,
Hiroyuki Takeya,
Yoshihiko Takano,
Masashi Arita,
Kenya Shimada,
Hirofumi Namatame,
Masaki Taniguchi,
Katsuhiro Suzuki,
Hidetomo Usui,
Kazuhiko Kuroki,
Takanori Wakita,
Yuji Muraoka,
Takayoshi Yokoya
Abstract:
One of the ultimate goals of the study of iron-based superconductors is to identify the common feature that produces the high critical temperature (Tc). In the early days, based on a weak-coupling viewpoint, the nesting between hole- and electron-like Fermi surfaces (FSs) leading to the so-called $s\pm$ state was considered to be one such key feature. However, this theory has faced a serious chall…
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One of the ultimate goals of the study of iron-based superconductors is to identify the common feature that produces the high critical temperature (Tc). In the early days, based on a weak-coupling viewpoint, the nesting between hole- and electron-like Fermi surfaces (FSs) leading to the so-called $s\pm$ state was considered to be one such key feature. However, this theory has faced a serious challenge ever since the discovery of alkali-metal-doped FeSe (AFS) superconductors, in which only electron-like FSs with a nodeless superconducting gap are observed. Several theories have been proposed, but a consistent understanding is yet to be achieved. Here we show experimentally that a hole-like band exists in KxFe2-ySe2, which presumably forms a hole-like Fermi surface. The present study suggests that AFS can be categorized in the same group as iron arsenides with both hole- and electron-like FSs present. This result provides a foundation for a comprehensive understanding of the superconductivity in iron-based superconductors.
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Submitted 8 June, 2016;
originally announced June 2016.
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Phonon-Dressed Two-Dimensional Carriers on the ZnO Surface
Authors:
R. Yukawa,
K. Ozawa,
S. Yamamoto,
H. Iwasawa,
K. Shimada,
E. F. Schwier,
K. Yoshimatsu,
H. Kumigashira,
H. Namatame,
M. Taniguchi,
I. Matsuda
Abstract:
Two-dimensional (2D) metallic states formed on the ZnO(10$\bar{1}$0) surface by hydrogen adsorption have been investigated using angle-resolved photoelectron spectroscopy (ARPES). The observed metallic state is characterized by a peak-dip-hump structure at just below the Fermi level and a long tail structure extending up to 600 meV in binding energy. The peak and hump positions are separated by ab…
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Two-dimensional (2D) metallic states formed on the ZnO(10$\bar{1}$0) surface by hydrogen adsorption have been investigated using angle-resolved photoelectron spectroscopy (ARPES). The observed metallic state is characterized by a peak-dip-hump structure at just below the Fermi level and a long tail structure extending up to 600 meV in binding energy. The peak and hump positions are separated by about 70 meV, a value close to the excitation energy of longitudinal optical (LO) phonons. Spectral functions formulated on the basis of the 2D electron-phonon coupling well reproduce the ARPES intensity distribution of the metallic states. This spectral analysis suggests that the 2D electrons accumulated on the ZnO surface couple to the LO phonons and that this coupling is the origin of the anomalous long tail. Our results indicate that the 2D electrons at the ZnO surface are described as the electron liquid model.
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Submitted 23 August, 2016; v1 submitted 19 April, 2016;
originally announced April 2016.
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Localized and mixed valence state of Ce $4f$ in superconducting and ferromagnetic CeO$_{1-x}$F$_{x}$BiS$_{2}$ revealed by x-ray absorption and photoemission spectroscopy
Authors:
T. Sugimoto,
D. Ootsuki,
E. Paris,
A. Iadecola,
M. Salome,
E. F. Schwier,
H. Iwasawa,
K. Shimada,
T. Asano,
R. Higashinaka,
T. D. Matsuda,
Y. Aoki,
N. L. Saini,
T. Mizokawa
Abstract:
We have performed Ce $L_3$-edge x-ray absorption spectroscopy (XAS) and Ce $4d$-$4f$ resonant photoemission spectroscopy (PES) on single crystals of CeO$_{1-x}$F$_x$BiS$_2$ for $x=0.0$ and 0.5 in order to investigate the Ce $4f$ electronic states. In the Ce $L_3$-edge XAS, mixed valence of Ce was found in the $x=0.0$ sample and the F-do** suppresses it, which is consistent with the results on po…
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We have performed Ce $L_3$-edge x-ray absorption spectroscopy (XAS) and Ce $4d$-$4f$ resonant photoemission spectroscopy (PES) on single crystals of CeO$_{1-x}$F$_x$BiS$_2$ for $x=0.0$ and 0.5 in order to investigate the Ce $4f$ electronic states. In the Ce $L_3$-edge XAS, mixed valence of Ce was found in the $x=0.0$ sample and the F-do** suppresses it, which is consistent with the results on polycrystalline samples. As for the resonant PES, we found that the Ce $4f$ electrons in both $x=0.0$ and $0.5$ systems respectively form a flat band at 1.0 eV and 1.4 eV below the Fermi level and there is no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS$_2$ deviates from Ce$^{3+}$ even though Ce $4f$ electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce $4f$ in CeOBiS$_2$ is mixed with the unoccupied Bi $6p_z$, which is consistent with the previous local structural study. Based on the analysis of the Ce $L_3$-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller increasing the number of Ce $4f$ electrons upon the F substitution for O.
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Submitted 17 August, 2016; v1 submitted 7 April, 2016;
originally announced April 2016.
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Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling
Authors:
Wei Yao,
Eryin Wang,
Ke Deng,
Shuzhen Yang,
Wenyun Wu,
Alexei V. Fedorov,
Sung-Kwan Mo,
Eike F. Schwier,
Mingtian Zheng,
Yohei Kojima,
Hideaki Iwasawa,
Kenya Shimada,
Kaili Jiang,
Pu Yu,
Jia Li,
Shuyun Zhou
Abstract:
Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large do** and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate…
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Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large do** and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate by using a very low concentration of an internal carbon source with high annealing temperature. The controlled growth leads to electronically decoupled graphene: it is nearly charge neutral and has extremely weak electron-phonon coupling (coupling strength $λ$ $\approx$ 0.056) as revealed by angle-resolved photoemission spectroscopic measurements. The thermodynamics and kinetics of the carbon diffusion process is investigated by DFT calculation. Such graphene with negligible graphene-substrate interaction provides an important platform for fundamental research as well as device applications when combined with a nondestructive sample transfer technique.
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Submitted 22 October, 2015;
originally announced October 2015.