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Coherent light scattering from a telecom C-band quantum dot
Authors:
L. Wells,
T. Müller,
R. M. Stevenson,
J. Skiba-Szymanska,
D. A. Ritchie,
A. J. Shields
Abstract:
Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is fundamental for fibre-based network implementations, but Fourier-limited emission and subnatural linewidth photons have so far only been reported from systems operating…
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Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is fundamental for fibre-based network implementations, but Fourier-limited emission and subnatural linewidth photons have so far only been reported from systems operating in the visible to near-infrared wavelength range. Here, we use InAs/InP quantum dots to demonstrate photons with coherence times much longer than the Fourier limit at telecom wavelength. Evidence of the responsible elastic laser scattering mechanism is observed in a distinct signature in two-photon interference measurements, and is confirmed using a direct measurement of the emission coherence. Further, we show that even the inelastically scattered photons have coherence times within the error bars of the Fourier limit. Finally, we make direct use of the minimal attenuation in fibre for these photons by measuring two-photon interference after 25 km of fibre, thereby demonstrating indistinguishability of photons emitted about 100 000 excitation cycles apart.
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Submitted 1 June, 2022; v1 submitted 16 May, 2022;
originally announced May 2022.
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Active reset of a radiative cascade for superequilibrium entangled photon generation
Authors:
Jonathan R. A. Müller,
R. Mark Stevenson,
Joanna Skiba-Szymanska,
Ginny Shooter,
Jan Huwer,
Ian Farrer,
David A. Ritchie,
Andrew J. Shields
Abstract:
The generation rate of entangled photons emitted from cascaded few-level systems is intrinsically limited by the lifetime of the radiative transitions. Here, we overcome this limit for entangled photon pairs from quantum dots via a novel driving regime based on an active reset of the radiative cascade. We show theoretically and experimentally the driving regime to enable the generation of entangle…
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The generation rate of entangled photons emitted from cascaded few-level systems is intrinsically limited by the lifetime of the radiative transitions. Here, we overcome this limit for entangled photon pairs from quantum dots via a novel driving regime based on an active reset of the radiative cascade. We show theoretically and experimentally the driving regime to enable the generation of entangled photon pairs with higher fidelity and intensity compared to the optimum continuously driven equilibrium state. Finally, we electrically generate entangled photon pairs with a total fidelity of $(79.5 \pm 1.1)\%$ at a record clock rate of 1.15GHz.
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Submitted 17 January, 2020;
originally announced January 2020.
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A tuneable telecom-wavelength entangled light emitting diode
Authors:
Z. -H. Xiang,
J. Huwer,
J. Skiba-Szymanska,
R. M. Stevenson,
D. J. P. Ellis,
I. Farrer,
M. B. Ward,
D. A. Ritchie,
A. J. Shields
Abstract:
Entangled light emitting diodes based on semiconductor quantum dots are promising devices for security sensitive quantum network applications, thanks to their natural lack of multi photon-pair generation. Apart from telecom wavelength emission, network integrability of these sources ideally requires electrical operation for deployment in compact systems in the field. For multiplexing of entangled…
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Entangled light emitting diodes based on semiconductor quantum dots are promising devices for security sensitive quantum network applications, thanks to their natural lack of multi photon-pair generation. Apart from telecom wavelength emission, network integrability of these sources ideally requires electrical operation for deployment in compact systems in the field. For multiplexing of entangled photons with classical data traffic, emission in the telecom O-band and tuneability to the nearest wavelength channel in compliance with coarse wavelength division multiplexing standards (20 nm channel spacing) is highly desirable. Here we show the first fully electrically operated telecom entangled light emitting diode with wavelength tuneability of more than 25nm, deployed in an installed fiber network. With the source tuned to 1310.00 nm, we demonstrate multiplexing of true single entangled photons with classical data traffic and achieve entanglement fidelities above 95% on an installed fiber in a city.
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Submitted 26 September, 2019;
originally announced September 2019.
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Controllable photonic time-bin qubits from a quantum dot
Authors:
J. P. Lee,
L. M. Wells,
B. Villa,
S. Kalliakos,
R. M. Stevenson,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Bennett,
A. J. Shields
Abstract:
Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete con…
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Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete control over the phase, $φ$. We show that this photon generation process can be performed deterministically, with only a moderate loss in coherence. Finally, we encode different qubits in different energies of the Raman scattered light, demonstrating wavelength division multiplexing at the single photon level.
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Submitted 2 April, 2018;
originally announced April 2018.
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A quantum light emitting diode for the standard telecom window around 1550 nm
Authors:
T. Müller,
J. Skiba-Szymanska,
A. Krysa,
J. Huwer,
M. Felle,
M. Anderson,
R. M. Stevenson,
J. Heffernan,
D. A. Ritchie,
A. J. Shields
Abstract:
For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region with multiphoton events suppressed down to 0.11$\pm$0.…
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For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region with multiphoton events suppressed down to 0.11$\pm$0.02. Using the biexciton cascade mechanism, they further produce entangled photons with a fidelity of 87$\pm$4%, sufficient for the application of one-way error correction protocols. The new material allows for entangled photon generation up to an operating temperature of 93 K, reaching a regime accessible by electric coolers. The quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems and provides a new material platform for develo** future quantum network hardware.
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Submitted 10 October, 2017;
originally announced October 2017.
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Surface Acoustic wave modulation of a coherently driven quantum dot in a pillar microcavity
Authors:
B. Villa,
A. J. Bennett,
D. J. P. Ellis,
J. P. Lee,
J. Skiba-Szymanska,
T. A. Mitchell,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
C. J. B. Ford,
A. J. Shields
Abstract:
We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of sing…
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We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of single-photon emission. Multiple phonon sidebands are resolved in the emission spectrum, due to the absorption and emission of vibrational quanta in each scattering event.
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Submitted 4 July, 2017;
originally announced July 2017.
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Electrically driven and electrically tunable quantum light sources
Authors:
J. P. Lee,
E. Murray,
A. J. Bennett,
D. J. P. Ellis,
C. Dangel,
I. Farrer,
P. Spencer,
D. A. Ritchie,
A. J. Shields
Abstract:
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots…
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Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots the neighbouring diode. The wavelength of the quantum dot emission from the neighbouring driven diode is tuned via the quantum confined Stark effect. We also show that we can electrically tune the fine structure splitting.
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Submitted 16 January, 2017;
originally announced January 2017.
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Universal growth scheme for entanglement-ready quantum dots
Authors:
Joanna Skiba-Szymanska,
R. Mark Stevenson,
Christiana Varnava,
Martin Felle,
Jan Huwer,
Tina Müller,
Anthony J. Bennett,
James P. Lee,
Ian Farrer,
Andrey Krysa,
Peter Spencer,
Lucy E. Goff,
David A. Ritchie,
Jon Heffernan,
Andrew J. Shields
Abstract:
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applicatio…
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Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into 1D optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realise QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs droplet-epitaxy of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ~900nm, and metal-organic vapour phase epitaxy on InP emitting at 1550 nm, with mean FSS 4x smaller than for Stranski-Krastanow QDs.
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Submitted 27 September, 2016;
originally announced September 2016.
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Resonance fluorescence from a telecom-wavelength quantum dot
Authors:
R. Al-Khuzheyri,
A. C. Dada,
J. Huwer,
T. S. Santana,
J. Skiba- Szymanska,
M. Felle,
M. B. Ward,
R. M. Stevenson,
I. Farrer,
M. G. Tanner,
R. H. Hadfield,
D. A. Ritchie,
A. J. Shields,
B. D. Gerardot
Abstract:
We report on resonance fluorescence from a single quantum dot emitting at telecom wavelengths. We perform high-resolution spectroscopy and observe the Mollow triplet in the Rabi regime--a hallmark of resonance fluorescence. The measured resonance-fluorescence spectra allow us to rule out pure dephasing as a significant decoherence mechanism in these quantum dots. Combined with numerical simulation…
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We report on resonance fluorescence from a single quantum dot emitting at telecom wavelengths. We perform high-resolution spectroscopy and observe the Mollow triplet in the Rabi regime--a hallmark of resonance fluorescence. The measured resonance-fluorescence spectra allow us to rule out pure dephasing as a significant decoherence mechanism in these quantum dots. Combined with numerical simulations, the experimental results provide robust characterisation of charge noise in the environment of the quantum dot. Resonant control of the quantum dot opens up new possibilities for on-demand generation of indistinguishable single photons at telecom wavelengths as well as quantum optics experiments and direct manipulation of solid-state qubits in telecom-wavelength quantum dots.
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Submitted 7 July, 2016;
originally announced July 2016.
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A semiconductor photon-sorter
Authors:
A. J. Bennett,
J. P. Lee,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
Photons do not interact directly with each other, but conditional control of one beam by another can be achieved with non-linear optical media at high field intensities. It is exceedingly difficult to reach such intensities at the single photon level but proposals have been made to obtain effective interactions by scattering photons from single transitions. We report here effective interactions be…
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Photons do not interact directly with each other, but conditional control of one beam by another can be achieved with non-linear optical media at high field intensities. It is exceedingly difficult to reach such intensities at the single photon level but proposals have been made to obtain effective interactions by scattering photons from single transitions. We report here effective interactions between photons created using a quantum dot weakly coupled to a cavity. We show that a passive single-photon non-linearity can modify the counting statistics of a Poissonian beam, sorting the photons in number. This is used to create strong correlations between detection events and sort polarisation correlated photons from an uncorrelated stream using a single spin. These results pave the way for optical switches operated by single quanta of light.
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Submitted 20 May, 2016;
originally announced May 2016.
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Ramsey Interference in a Multi-level Quantum System
Authors:
J. P. Lee,
A. J. Bennett,
J. Skiba-Szymanska,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We report Ramsey interference in the excitonic population of a negatively charged quantum dot revealing the coherence of the state in the limit where radiative decay is dominant. Our experiments show that the decay time of the Ramsey interference is limited by the spectral width of the transition. Applying a vertical magnetic field induces Zeeman split transitions that can be addressed by changing…
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We report Ramsey interference in the excitonic population of a negatively charged quantum dot revealing the coherence of the state in the limit where radiative decay is dominant. Our experiments show that the decay time of the Ramsey interference is limited by the spectral width of the transition. Applying a vertical magnetic field induces Zeeman split transitions that can be addressed by changing the laser detuning to reveal 2, 3 and 4 level system behaviour. We show that under finite field the phase-sensitive control of two optical pulses from a single laser can be used to prepare both population and spin qubits simultaneously.
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Submitted 24 August, 2015;
originally announced August 2015.
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Cavity-enhanced coherent light scattering from a quantum dot
Authors:
A. J. Bennett,
J. P. Lee,
D. J. P. Ellis,
T. Meany,
E. Murray,
F. Floether,
J. P. Griffths,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
Resonant excitation of atoms and ions in macroscopic cavities has lead to exceptional control over quanta of light. Translating these advantages into the solid state with emitters in microcavities promises revolutionary quantum technologies in information processing and metrology. Key is resonant optical reading and writing from the emitter-cavity system. However, it has been widely expected that…
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Resonant excitation of atoms and ions in macroscopic cavities has lead to exceptional control over quanta of light. Translating these advantages into the solid state with emitters in microcavities promises revolutionary quantum technologies in information processing and metrology. Key is resonant optical reading and writing from the emitter-cavity system. However, it has been widely expected that the reflection of a resonant laser from a micro-fabricated wavelength-sized cavity would dominate any quantum signal. Here we demonstrate coherent photon scattering from a quantum dot in a micro-pillar. The cavity is shown to enhance the fraction of light which is resonantly scattered towards unity, generating anti-bunched indistinguishable photons a factor of 16 beyond the time-bandwidth limit, even when the transition is near saturation. Finally, deterministic excitation is used to create 2-photon N00N states with which we make super-resolving phase measurements in a photonic circuit.
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Submitted 7 August, 2015;
originally announced August 2015.
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Polarization correlated photons from a positively charged quantum dot
Authors:
Y. Cao,
A. J. Bennett,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
Polarized cross-correlation spectroscopy on a quantum dot charged with a single hole shows the sequential emission of photons with common circular polarization. This effect is visible without magnetic field, but becomes more pronounced as the field along the quantization axis is increased. We interpret the data in terms of electron dephasing in the X+ state caused by the Overhauser field of nuclei…
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Polarized cross-correlation spectroscopy on a quantum dot charged with a single hole shows the sequential emission of photons with common circular polarization. This effect is visible without magnetic field, but becomes more pronounced as the field along the quantization axis is increased. We interpret the data in terms of electron dephasing in the X+ state caused by the Overhauser field of nuclei in the dot. We predict the correlation timescale can be increased by accelerating the emission rate with cavity-QED.
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Submitted 31 July, 2015;
originally announced July 2015.
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Energy-Tunable Quantum Dot with Minimal Fine Structure Created by Using Simultaneous Electric and Magnetic Fields
Authors:
M. A. Pooley,
A. J. Bennett,
R. M. Stevenson,
A. J. Shields,
I. Farrer,
D. A. Ritchie
Abstract:
The neutral biexciton cascade of single quantum dots is a promising source of entangled photon pairs. The character of the entangled state is determined by the energy difference between the excitonic eigenstates known as fine-structure splitting (FSS). Here we reduce the magnitude of the FSS by simultaneously using two independent tuning mechanisms: in-plane magnetic field and vertical electric fi…
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The neutral biexciton cascade of single quantum dots is a promising source of entangled photon pairs. The character of the entangled state is determined by the energy difference between the excitonic eigenstates known as fine-structure splitting (FSS). Here we reduce the magnitude of the FSS by simultaneously using two independent tuning mechanisms: in-plane magnetic field and vertical electric field. We observe that there exists a minimum possible FSS in each quantum dot which is independent of these tuning mechanisms. However, with simultaneous application of electric and magnetic fields, we show the FSS can be reduced to its minimum value as the energy of emission is tuned over several meV with a 5-T magnet.
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Submitted 28 July, 2015;
originally announced July 2015.
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Engineering quantum dots for electrical control of the fine structure splitting
Authors:
M. A. Pooley,
A. J. Bennett,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth condition…
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We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth conditions, emission wavelengths and in different material systems. Statistical measurements of characteristic parameters such as emission energy, Stark shift and FSS tuning are presented which may provide a guide for future attempts to increase the yield of quantum dots that can be tuned to a minimal value of FSS with vertical electric field.
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Submitted 22 July, 2015;
originally announced July 2015.
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Ultrafast electrical control of a resonantly driven single photon source
Authors:
Y. Cao,
A. J. Bennett,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We demonstrate generation of a pulsed stream of electrically triggered single photons in resonance fluorescence, by applying high frequency electrical pulses to a single quantum dot in a p-i-n diode under resonant laser excitation. Single photon emission was verifed, with the probability of multiple photon emission reduced to 2.8%. We show that despite the presence of charge noise in the emission…
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We demonstrate generation of a pulsed stream of electrically triggered single photons in resonance fluorescence, by applying high frequency electrical pulses to a single quantum dot in a p-i-n diode under resonant laser excitation. Single photon emission was verifed, with the probability of multiple photon emission reduced to 2.8%. We show that despite the presence of charge noise in the emission spectrum of the dot, resonant excitation acts as a filter to generate narrow bandwidth photons.
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Submitted 22 July, 2015;
originally announced July 2015.
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Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb NMR spectroscopy
Authors:
A. M. Waeber,
M. Hopkinson,
I. Farrer,
D. A. Ritchie,
J. Nilsson,
R. M. Stevenson,
A. J. Bennett,
A. J. Shields,
G. Burkard,
A. I. Tartakovskii,
M. S. Skolnick,
E. A. Chekhovich
Abstract:
One of the key challenges in spectroscopy is inhomogeneous broadening that masks the homogeneous spectral lineshape and the underlying coherent dynamics. A variety of techniques including four-wave mixing and spectral hole-burning are used in optical spectroscopy while in nuclear magnetic resonance (NMR) spin-echo is the most common way to counteract inhomogeneity. However, the high-power pulses u…
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One of the key challenges in spectroscopy is inhomogeneous broadening that masks the homogeneous spectral lineshape and the underlying coherent dynamics. A variety of techniques including four-wave mixing and spectral hole-burning are used in optical spectroscopy while in nuclear magnetic resonance (NMR) spin-echo is the most common way to counteract inhomogeneity. However, the high-power pulses used in spin-echo and other sequences often create spurious dynamics obscuring the subtle spin correlations that play a crucial role in quantum information applications. Here we develop NMR techniques that allow the correlation times of the fluctuations in a nuclear spin bath of individual quantum dots to be probed. This is achieved with the use of frequency comb excitation which allows the homogeneous NMR lineshapes to be measured avoiding high-power pulses. We find nuclear spin correlation times exceeding 1 s in self-assembled InGaAs quantum dots - four orders of magnitude longer than in strain-free III-V semiconductors. The observed freezing of the nuclear spin fluctuations opens the way for the design of quantum dot spin qubits with a well-understood, highly stable nuclear spin bath.
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Submitted 14 June, 2015;
originally announced June 2015.
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Voltage control of electron-nuclear spin correlation time in a single quantum dot
Authors:
J. Nilsson,
L. Bouet,
A. J. Bennett,
T. Amand,
R. M. Stevenson,
I. Farrer,
D. A. Ritchie,
S. Kunz,
X. Marie,
A. J. Shields,
B. Urbaszek
Abstract:
We demonstrate bias control of the hyperfine coupling between a single electron in an InAs quantum dot and the surrounding nuclear spins monitored through the positively charged exciton X+ emission. In applied longitudinal magnetic fields we vary simultaneously the correlation time of the hyperfine interaction and the nuclear spin relaxation time and thereby the amplitude of the achieved dynamic n…
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We demonstrate bias control of the hyperfine coupling between a single electron in an InAs quantum dot and the surrounding nuclear spins monitored through the positively charged exciton X+ emission. In applied longitudinal magnetic fields we vary simultaneously the correlation time of the hyperfine interaction and the nuclear spin relaxation time and thereby the amplitude of the achieved dynamic nuclear polarization under optical pum** conditions. In applied transverse magnetic fields a change in the applied bias allows to switch from the anomalous Hanle effect to the standard electron spin depolarization curves.
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Submitted 6 June, 2013;
originally announced June 2013.
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Voltage tunability of single spin-states in a quantum dot
Authors:
Anthony J. Bennett,
Matthew A. Pooley,
Yameng Cao,
Niklas Sköld,
Ian Farrer,
David A. Ritchie,
Andrew J. Shields
Abstract:
Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid-state. We demonstrate voltage tunability of the spin energy levels in a single quantum dot by modi…
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Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid-state. We demonstrate voltage tunability of the spin energy levels in a single quantum dot by modifying how spins sense magnetic field. We find the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.
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Submitted 27 February, 2013;
originally announced February 2013.
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Electric-field-induced coherent coupling of the exciton states in a single quantum dot
Authors:
A. J. Bennett,
M. A. Pooley,
R. M. Stevenson,
M. B. Ward,
R. B. Patel,
A. Boyer de la Giroday,
N. Sköld,
I. Farrer,
C. A. Nicoll,
D. A. Ritchie,
A. J. Shields
Abstract:
The signature of coherent coupling between two quantum states is an anticrossing in their energies as one is swept through the other. In single semiconductor quantum dots containing an electron-hole pair the eigenstates form a two-level system that can be used to demonstrate quantum effects in the solid state, but in all previous work these states were independent. Here we describe a technique to…
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The signature of coherent coupling between two quantum states is an anticrossing in their energies as one is swept through the other. In single semiconductor quantum dots containing an electron-hole pair the eigenstates form a two-level system that can be used to demonstrate quantum effects in the solid state, but in all previous work these states were independent. Here we describe a technique to control the energetic splitting of these states using a vertical electric field, facilitating the observation of coherent coupling between them. Near the minimum splitting the eigenstates rotate in the plane of the sample, being orientated at 45° when the splitting is smallest. Using this system we show direct control over the exciton states in one quantum dot, leading to the generation of entangled photon pairs.
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Submitted 27 March, 2012;
originally announced March 2012.
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Free induction decay of a superposition stored in a quantum dot
Authors:
A. J. Bennett,
M. A. Pooley,
R. M. Stevenson,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We study the free evolution of a superposition initialized with high fidelity in the neutral-exciton state of a quantum dot. Readout of the state at later times is achieved by polarized photon detection, averaged over a large number of cycles. By controlling the fine-structure splitting (FSS) of the dot with a dc electric field, we show a reduction in the degree of polarization of the signal when…
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We study the free evolution of a superposition initialized with high fidelity in the neutral-exciton state of a quantum dot. Readout of the state at later times is achieved by polarized photon detection, averaged over a large number of cycles. By controlling the fine-structure splitting (FSS) of the dot with a dc electric field, we show a reduction in the degree of polarization of the signal when the splitting is minimized. In analogy with the "free induction decay" observed in nuclear magnetic resonance, we attribute this to hyperfine interactions with nuclei in the semiconductor. We numerically model this effect and find good agreement with experimental studies. Our findings have implications for storage of superpositions in solid-state systems and for entangled photon pair emission protocols that require a small value of the FSS.
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Submitted 27 March, 2012;
originally announced March 2012.
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On-chip single photon emission from an integrated semiconductor quantum dot into a photonic crystal waveguide
Authors:
Andre Schwagmann,
Sokratis Kalliakos,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, singl…
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We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, single photon emission rates of up to 19 MHz into the guided mode are demonstrated, which corresponds to a device efficiency of 24%. These results herald the monolithic integration of sources in photonic quantum circuits.
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Submitted 17 January, 2012;
originally announced January 2012.
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Exciton-spin memory with a semiconductor quantum dot molecule
Authors:
A. Boyer de la Giroday,
N. Skold,
R. M. Stevenson,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We report on a single photon and spin storage device based on a semiconductor quantum dot molecule. Optically excited single electron-hole pairs are trapped within the molecule and their recombination rate is electrically controlled over three orders of magnitude. Single photons are stored up to 1 microsecond and read out on a sub-nanosecond timescale. Using resonant excitation, the circular polar…
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We report on a single photon and spin storage device based on a semiconductor quantum dot molecule. Optically excited single electron-hole pairs are trapped within the molecule and their recombination rate is electrically controlled over three orders of magnitude. Single photons are stored up to 1 microsecond and read out on a sub-nanosecond timescale. Using resonant excitation, the circular polarisation of individual photons is transferred into the spin state of electron-hole pairs with a fidelity above 80%, which does not degrade for storage times up to the 12.5ns repetition period of the experiment.
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Submitted 18 May, 2011;
originally announced May 2011.
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All-electrical coherent control of the exciton states in a single quantum dot
Authors:
A. Boyer de la Giroday,
A. J. Bennett,
M. A. Pooley,
R. M. Stevenson,
N. Skold,
R. B. Patel,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We demonstrate high-fidelity reversible transfer of quantum information from the polarisation of photons into the spin-state of an electron-hole pair in a semiconductor quantum dot. Moreover, spins are electrically manipulated on a sub-nanosecond timescale, allowing us to coherently control their evolution. By varying the area of the electrical pulse, we demonstrate phase-shift and spin-flip gate…
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We demonstrate high-fidelity reversible transfer of quantum information from the polarisation of photons into the spin-state of an electron-hole pair in a semiconductor quantum dot. Moreover, spins are electrically manipulated on a sub-nanosecond timescale, allowing us to coherently control their evolution. By varying the area of the electrical pulse, we demonstrate phase-shift and spin-flip gate operations with near-unity fidelities. Our system constitutes a controllable quantum interface between flying and stationary qubits, an enabling technology for quantum logic in the solid-state.
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Submitted 11 November, 2010;
originally announced November 2010.
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Giant Stark effect in the emission of single semiconductor quantum dots
Authors:
Anthony. J. Bennett,
Raj. B. Patel,
Joanna Skiba-Szymanska,
Christine A. Nicoll,
Ian Farrer,
David A. Ritchie,
Andrew J. Shields
Abstract:
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions…
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We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.
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Submitted 10 November, 2010;
originally announced November 2010.
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Efficient photon number detection with silicon avalanche photodiodes
Authors:
O. Thomas,
Z. L. Yuan,
J. F. Dynes,
A. W. Sharpe,
A. J. Shields
Abstract:
We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection efficiency at 600 nm is measured to be 73.8%, corresponding to an avalanche probability of 91.1% of the absorbed photons, with a dark count probability below 1.1x10^{…
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We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection efficiency at 600 nm is measured to be 73.8%, corresponding to an avalanche probability of 91.1% of the absorbed photons, with a dark count probability below 1.1x10^{-6} per gate. With this performance and operation close to room temperature, fast-gated silicon avalanche photodiodes are ideal for optical quantum information processing that requires single-shot photon number detection.
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Submitted 21 July, 2010;
originally announced July 2010.
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Interference of dissimilar photon sources
Authors:
A. J. Bennett,
R. B. Patel,
C. A. Nicoll,
D. A. Ritchie,
A. J. Shields
Abstract:
If identical photons meet at a semi-transparent mirror they appear to leave in the same direction, an effect called "two-photon interference". It has been known for some time that this effect should occur for photons generated by dissimilar sources with no common history, provided the easurement cannot distinguish between the photons. Here we report a technique to observe such interference with is…
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If identical photons meet at a semi-transparent mirror they appear to leave in the same direction, an effect called "two-photon interference". It has been known for some time that this effect should occur for photons generated by dissimilar sources with no common history, provided the easurement cannot distinguish between the photons. Here we report a technique to observe such interference with isolated, unsynchronized sources whose coherence times differ by several orders of magnitude. In an experiment we interfere photons generated via different physical processes, with different photon statistics. One source is stimulated emission from a tuneable laser, which has Poissonian statistics and a nano-eV bandwidth. The other is spontaneous emission from a quantum dot in a p-i-n diode with a micro-eV linewidth. We develop a theory to explain the visibility of interference, which is primarily limited by the timing resolution of our detectors.
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Submitted 4 June, 2010;
originally announced June 2010.
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Evolution of locally excited avalanches in semiconductors
Authors:
Z. L. Yuan,
J. F. Dynes,
A. W. Sharpe,
A. J. Shields
Abstract:
We show that semiconductor avalanche photodiodes can exhibit diminutive amplification noise during the early evolution of avalanches. The noise is so low that the number of locally excited charges that seed each avalanche can be resolved. These findings constitute an important first step towards realization of a solid-state noiseless amplifier. Moreover, we believe that the experimental setup used…
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We show that semiconductor avalanche photodiodes can exhibit diminutive amplification noise during the early evolution of avalanches. The noise is so low that the number of locally excited charges that seed each avalanche can be resolved. These findings constitute an important first step towards realization of a solid-state noiseless amplifier. Moreover, we believe that the experimental setup used, \textit{i.e.}, time-resolving locally excited avalanches, will become a useful tool for optimizing the number resolution.
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Submitted 25 May, 2010; v1 submitted 3 March, 2010;
originally announced March 2010.
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Tunable Indistinguishable Photons From Remote Quantum Dots
Authors:
R. B. Patel,
A. J. Bennett,
I. Farrer,
C. A. Nicoll,
D. A. Ritchie,
A. J. Shields
Abstract:
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the magnitude of field that can be applied to tens of kVcm^-1, before carriers tunnel out of the dot. The Stark shift experienced by the emission line is typically 1 meV…
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Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the magnitude of field that can be applied to tens of kVcm^-1, before carriers tunnel out of the dot. The Stark shift experienced by the emission line is typically 1 meV. We report that by embedding the quantum dots in a quantum well heterostructure the vertical field that can be applied is increased by over an order of magnitude whilst preserving the narrow linewidths, high internal quantum efficiencies and familiar emission spectra. Individual dots can then be continuously tuned to the same energy allowing for two-photon interference between remote, independent, quantum dots.
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Submitted 20 November, 2009;
originally announced November 2009.
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An avalanche-photodiode-based photon-number-resolving detector
Authors:
B. E. Kardynal,
Z. L. Yuan,
A. J. Shields
Abstract:
Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval. However, such photon number resolving detectors are urgently needed for applications in quantum computing,2-4 communications5 and interferometry,6 as well as for extending the ap…
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Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval. However, such photon number resolving detectors are urgently needed for applications in quantum computing,2-4 communications5 and interferometry,6 as well as for extending the applicability of quantum detection generally. Here we show that, contrary to current belief,3,4 avalanche photodiodes are capable of detecting photon number, using a technique to measure very weak avalanches at the early stage of their development. Under such conditions the output signal from the avalanche photodiode is proportional to the number of photons in the incident pulse. As a compact, mass-manufactured device, operating without cryogens and at telecom wavelengths, it offers a practical solution for photon number detection.
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Submitted 2 July, 2008;
originally announced July 2008.
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Post-selective two-photon interference from a continuous non-classical stream of photons emitted by a quantum dot
Authors:
R. B. Patel,
A. J. Bennett,
K. Cooper,
P. Atkinson,
C. A. Nicoll,
D. A. Ritchie,
A. J. Shields
Abstract:
We report an electrically driven semiconductor single photon source capable of emitting photons with a coherence time of up to 400 ps under fixed bias. It is shown that increasing the injection current causes the coherence time to reduce and this effect is well explained by the fast modulation of a fluctuating environment. Hong-Ou-Mandel type two-photon interference using a Mach-Zehnder interfer…
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We report an electrically driven semiconductor single photon source capable of emitting photons with a coherence time of up to 400 ps under fixed bias. It is shown that increasing the injection current causes the coherence time to reduce and this effect is well explained by the fast modulation of a fluctuating environment. Hong-Ou-Mandel type two-photon interference using a Mach-Zehnder interferometer is demonstrated using this source to test the indistinguishability of individual photons by post-selecting events where two photons collide at a beamsplitter. Finally, we consider how improvements in our detection system can be used to achieve a higher interference visibility.
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Submitted 11 April, 2008;
originally announced April 2008.
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Cavity-enhanced radiative emission rate in a single-photon-emitting diode operating at 0.5 GHz
Authors:
David J. P. Ellis,
Anthony J. Bennett,
Samuel J. Dewhurst,
Christine A. Nicoll,
David A. Ritchie,
Andrew J. Shields
Abstract:
We report the observation of a Purcell enhancement in the electroluminescence decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an annulus of low-refractive-index aluminium oxide, formed by wet oxidation. The same layer acts as a current aperture, reducing the active area of the device without…
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We report the observation of a Purcell enhancement in the electroluminescence decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an annulus of low-refractive-index aluminium oxide, formed by wet oxidation. The same layer acts as a current aperture, reducing the active area of the device without impeding the electrical properties of the p-i-n diode. This allowed single photon electroluminescence to be demonstrated at repetition rates up to 0.5 GHz.
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Submitted 4 April, 2008;
originally announced April 2008.
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Indistinguishable photons from a diode
Authors:
A. J. Bennett,
R. B. Patel,
A. J. Shields,
K. Cooper,
P. Atkinson,
C. A. Nicoll,
D. A. Ritchie
Abstract:
We generate indistinguishable photons from a semiconductor diode containing a InAs/GaAs quantum dot. Using an all-electrical technique to populate and control a single-photon emitting state we filter-out dephasing by Stark-shifting the emission energy on timescales below the dephasing time of the state. Mixing consecutive photons on a beam-splitter we observe two-photon interference with a visib…
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We generate indistinguishable photons from a semiconductor diode containing a InAs/GaAs quantum dot. Using an all-electrical technique to populate and control a single-photon emitting state we filter-out dephasing by Stark-shifting the emission energy on timescales below the dephasing time of the state. Mixing consecutive photons on a beam-splitter we observe two-photon interference with a visibility of 64%.
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Submitted 26 March, 2008;
originally announced March 2008.
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Energy-Dependent Electron-Electron Scattering and Spin Dynamics in a Two Dimensional Electron Gas
Authors:
W. J. H. Leylanda,
R. T. Harley,
M. Henini,
A. J. Shields,
I. Farrer,
D. A. Ritchie
Abstract:
Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasi-collision-free regime of spin dynamics. As the energy is increased a…
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Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasi-collision-free regime of spin dynamics. As the energy is increased a transition to exponential, collision-dominated, spin decay occurs. The frequency and the value of tp* are extracted using a Monte Carlo simulation method. At the Fermi energy tp* is very close to the ensemble momentum relaxation time (tp) obtained from the electron mobility. For higher energies tp* falls quadratically, consistent with theoretical expectations for the onset of electron-electron scattering which is inhibited by the Pauli principle at the Fermi energy.
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Submitted 8 March, 2008;
originally announced March 2008.
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Oxide-apertured microcavity single-photon emitting diode
Authors:
D. J. P. Ellis,
A. J. Bennett,
A. J. Shields,
P. Atkinson,
D. A. Ritchie
Abstract:
We have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet-oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection current. Lateral confinement of the optical mode in optically pumped structures produces a strong enhancement of the radiative decay rate. Using microcavity struc…
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We have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet-oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection current. Lateral confinement of the optical mode in optically pumped structures produces a strong enhancement of the radiative decay rate. Using microcavity structures with doped contact layers, we demonstrate a single-photon emitting diode where current may be injected into a single dot.
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Submitted 13 September, 2007;
originally announced September 2007.
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Observation of the Purcell effect in high-index-contrast micropillar
Authors:
A. J. Bennett,
D. J. P. Ellis,
A. J. Shields,
P. Atkinson,
I. Farrer,
D. A. Ritchie
Abstract:
We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer repeats and reduce the mode volume. We have studied a number of samples containing a low density of InGaAs/GaAs self assembled quantum dots in a cavi…
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We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer repeats and reduce the mode volume. We have studied a number of samples containing a low density of InGaAs/GaAs self assembled quantum dots in a cavity and here report observation of a three fold enhancement in the radiative lifetime of a quantum dot exciton state due to the Purcell effect.
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Submitted 13 September, 2007;
originally announced September 2007.
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Experimental position-time entanglement with degenerate single photons
Authors:
A. J. Bennett,
D. G. Gevaux,
Z. L. Yuan,
A. J. Shields,
P. Atkinson,
D. A. Ritchie
Abstract:
We report an experiment in which two-photon interference occurs between degenerate single photons that never meet. The two photons travel in opposite directions through our fibre-optic interferometer and interference occurs when the photons reach two different, spatially separated, 2-by-2 couplers at the same time. We show that this experiment is analogous to the conventional Franson-type entang…
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We report an experiment in which two-photon interference occurs between degenerate single photons that never meet. The two photons travel in opposite directions through our fibre-optic interferometer and interference occurs when the photons reach two different, spatially separated, 2-by-2 couplers at the same time. We show that this experiment is analogous to the conventional Franson-type entanglement experiment where the photons are entangled in position and time. We measure wavefunction overlaps for the two photons as high as 94 $\pm$ 3%.
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Submitted 6 February, 2008; v1 submitted 6 September, 2007;
originally announced September 2007.
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Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases
Authors:
W. J. H. Leyland,
R. T. Harley,
M. Henini,
D. Taylor,
A. J. Shields,
I. Farrer,
D. A. Ritchie
Abstract:
Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from 5 nm to 20 nm and 2DEG sheet densities from 1.75x1011cm-2 to 3.5x1011cm-2 the evolution of a small injected spin population is found to be a damped…
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Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from 5 nm to 20 nm and 2DEG sheet densities from 1.75x1011cm-2 to 3.5x1011cm-2 the evolution of a small injected spin population is found to be a damped oscillation rather than exponential relaxation, consistent with the quasi-collision-free regime of D'yakonov-Perel spin dynamics. A Monte Carlo simulation method is used to extract the spin-orbit-induced electron spin precession frequency |W(kF)| and electron momentum scattering time tp* at the Fermi wavevector. The spin decay time passes through a minimum at a temperature corresponding to the transition from collision-free to collision-dominated regimes and tp* is found to be close to the ensemble momentum scattering time tp obtained from Hall measurements of electron mobility. The values of |W(kF)| give the Dresselhaus (BIA) coefficient of spin-orbit interaction as a function of electron confinement energy in the quantum show, qualitatively, the behaviour expected from k.p theory.
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Submitted 27 July, 2007;
originally announced July 2007.
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Surface-acoustic-wave-driven luminescence from a lateral p-n junction
Authors:
J. R. Gell,
P. Atkinson,
S. P. Bremner,
F. Sfigakis,
M. Kataoka,
D. Anderson,
G. A. C. Jones,
C. H. W. Barnes,
D. A. Ritchie,
M. B. Ward,
C. E. Norman,
A. J. Shields
Abstract:
The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This typ…
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The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.
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Submitted 28 January, 2007;
originally announced January 2007.
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Electrically addressing a single self-assembled quantum dot
Authors:
D. J. P. Ellis,
A. J. Bennett,
P. Atkinson,
D. A. Ritchie,
A. J. Shields
Abstract:
We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single d…
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We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot.
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Submitted 6 December, 2006;
originally announced December 2006.
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Single-photon-emitting diodes: a review
Authors:
A. J. Bennett,
P. Atkinson,
P. See,
M. B. Ward,
R. M. Stevenson,
Z. L. Yuan,
D. C. Unitt,
D. J. P. Ellis,
K. Cooper,
D. A. Ritchie,
A. J. Shields
Abstract:
Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots have been widely studied for this reason, but the vast majority of reported work has been limited to optically excited sources. Here we discuss the progress made…
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Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots have been widely studied for this reason, but the vast majority of reported work has been limited to optically excited sources. Here we discuss the progress made so far, and prospects for, electrically driven single-photon-emitting diodes (SPEDs).
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Submitted 31 October, 2006;
originally announced October 2006.
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Enhanced spin relaxation time due to electron-electron scattering in semiconductors
Authors:
W. J. H. Leyland,
G. H. John,
R. T. Harley,
M. M. Glazov,
E. L. Ivchenko,
D. A. Ritchie,
A. J. Shields,
M. Henini
Abstract:
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcit…
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We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
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Submitted 21 October, 2006;
originally announced October 2006.
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Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots
Authors:
R. M. Stevenson,
R. J. Young,
P. See,
D. G. Gevaux,
K. Cooper,
P. Atkinson,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, a…
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By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, and has enabled the splitting to be tuned to zero within the resolution of our experiments. Observed behaviour allows us to determine g-factors and exchange splittings for different types of dots.
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Submitted 30 January, 2006;
originally announced January 2006.
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Inversion of exciton level splitting in quantum dots
Authors:
R. J. Young,
R. M. Stevenson,
A. J. Shields,
P. Atkinson,
K. Cooper,
D. A. Ritchie,
K. M. Groom,
A. I. Tartakovskii,
M. S. Skolnick
Abstract:
The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown t…
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The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Thermal annealing is shown to reduce the exciton confinement, thereby increasing the number of dots with splitting close to zero.
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Submitted 30 January, 2006;
originally announced January 2006.
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Improved fidelity of triggered entangled photons from single quantum dots
Authors:
Robert J. Young,
R. Mark Stevenson,
Paola Atkinson,
Ken Cooper,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer to reduce the contribution of background light in the measurements. Results presented show that >70% of the detected photon pairs are entangled. The high fid…
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We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer to reduce the contribution of background light in the measurements. Results presented show that >70% of the detected photon pairs are entangled. The high fidelity of the (|HxxHx>+|VxxVx>)/2^0.5 state that we determine is sufficient to satisfy numerous tests for entanglement. The improved quality of entanglement represents a significant step towards the realisation of a practical quantum dot source compatible with applications in quantum information.
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Submitted 26 February, 2006; v1 submitted 27 January, 2006;
originally announced January 2006.
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Surface acoustic wave-induced electroluminescence intensity oscillation in planar light-emitting devices
Authors:
Marco Cecchini,
Vincenzo Piazza,
Fabio Beltram,
D. G. Gevaux,
M. B. Ward,
A. J. Shields,
H. E. Beere,
D. A. Ritchie
Abstract:
Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (~1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts.
Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (~1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts.
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Submitted 7 January, 2005;
originally announced January 2005.
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High-performance planar light-emitting diode
Authors:
Marco Cecchini,
Vincenzo Piazza,
Fabio Beltram,
Marco Lazzarino,
M. B. Ward,
A. J. Shields,
H. E. Beere,
D. A. Ritchie
Abstract:
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaA…
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Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity and high external efficiency. Time-resolved measurements yielded extremely short recombination times of the order of 50 ps, demonstrating the relevance of the present scheme for high-frequency device applications in the GHz range.
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Submitted 31 July, 2002;
originally announced July 2002.