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Jamming memory into acoustically trained dense suspensions under shear
Authors:
Edward Y. X. Ong,
Anna R. Barth,
Navneet Singh,
Meera Ramaswamy,
Abhishek Shetty,
Bulbul Chakraborty,
James P. Sethna,
Itai Cohen
Abstract:
Systems driven far from equilibrium often retain structural memories of their processing history. This memory has, in some cases, been shown to dramatically alter the material response. For example, work hardening in crystalline metals can alter the hardness, yield strength, and tensile strength to prevent catastrophic failure. Whether memory of processing history can be similarly exploited in flo…
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Systems driven far from equilibrium often retain structural memories of their processing history. This memory has, in some cases, been shown to dramatically alter the material response. For example, work hardening in crystalline metals can alter the hardness, yield strength, and tensile strength to prevent catastrophic failure. Whether memory of processing history can be similarly exploited in flowing systems, where significantly larger changes in structure should be possible, remains poorly understood. Here, we demonstrate a promising route to embedding such useful memories. We build on work showing that exposing a sheared dense suspension to acoustic perturbations of different power allows for dramatically tuning the sheared suspension viscosity and underlying structure. We find that, for sufficiently dense suspensions, upon removing the acoustic perturbations, the suspension shear jams with shear stress contributions from the maximum compressive and maximum extensive axes that reflect the acoustic training. Because the contributions from these two orthogonal axes to the total shear stress are antagonistic, it is possible to tune the resulting suspension response in surprising ways. For example, we show that differently trained sheared suspensions exhibit: 1) different susceptibility to the same acoustic perturbation; 2) orders of magnitude changes in their instantaneous viscosities upon shear reversal; and 3) even a shear stress that increases in magnitude upon shear cessation. To further illustrate the power of this approach for controlling suspension properties, we demonstrate that flowing states well below the shear jamming threshold can be shear jammed via acoustic training. Collectively, our work paves the way for using acoustically induced memory in dense suspensions to generate rapidly and widely tunable materials.
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Submitted 24 April, 2024;
originally announced April 2024.
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Stress-controlled medium-amplitude oscillatory shear (MAOStress) of PVA-Borax
Authors:
Nabil Ramlawi,
Mohammad Tanver Hossain,
Abhishek Shetty,
Randy H. Ewoldt
Abstract:
We report the first-ever complete measurement of MAOStress material functions, which reveal that stress can be more fundamental than strain or strain rate for understanding linearity limits as a function of Deborah number. The material used is a canonical viscoelastic liquid with a single dominant relaxation time: Polyvinyl alcohol (PVA) polymer solution crosslinked with tetrahydroborate (Borax) s…
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We report the first-ever complete measurement of MAOStress material functions, which reveal that stress can be more fundamental than strain or strain rate for understanding linearity limits as a function of Deborah number. The material used is a canonical viscoelastic liquid with a single dominant relaxation time: Polyvinyl alcohol (PVA) polymer solution crosslinked with tetrahydroborate (Borax) solution. We outline experimental limit lines and their dependence on geometry and test conditions. These MAOStress measurements enable us to observe the frequency dependence of the weakly nonlinear deviation as a function of stress amplitude. The observed features of MAOStress material functions are distinctly simpler than MAOStrain, where the frequency dependence is much more dramatic. The strain-stiffening transient network model (SSTNM) was used to derive a model-informed normalization of the nonlinear material functions that accounts for their scaling with the linear material properties. Moreover, we compare the frequency-dependence of the critical stress, strain, and strain-rate for the linearity limit, which are rigorously computed from the MAOStress and MAOStrain material functions. While critical strain and strain-rate change by orders of magnitude throughout the Deborah number range, the critical stress changes by a factor of about two, showing that stress is a more fundamental measure of nonlinearity strength. This work extends the experimental accessibility of the weakly nonlinear regime to stress-controlled instruments and deformations, which reveal material physics beyond linear viscoelasticity but at conditions that are accessible to theory and detailed simulation.
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Submitted 29 February, 2024;
originally announced February 2024.
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The manifold rheology of fluidized granular media
Authors:
Olfa D'Angelo,
Abhishek Shetty,
Matthias Sperl,
W. Till Kranz
Abstract:
Fluidized granular media have a rich rheology: measuring shear stress $σ$ as a function of shear rate $\dotγ$, they exhibit Newtonian behavior $σ\sim\dotγ$ for low densities and shear rates, develop a yield stress for intermediate shear rates and densities approaching the granular glass transition, and finally, cross over to shear-thickening Bagnold scaling, $σ\sim\dotγ^2$. This wealth of flow-beh…
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Fluidized granular media have a rich rheology: measuring shear stress $σ$ as a function of shear rate $\dotγ$, they exhibit Newtonian behavior $σ\sim\dotγ$ for low densities and shear rates, develop a yield stress for intermediate shear rates and densities approaching the granular glass transition, and finally, cross over to shear-thickening Bagnold scaling, $σ\sim\dotγ^2$. This wealth of flow-behaviors makes fluidized beds a fascinating material, but also one that is challenging to encompass into a global theory, despite its relevance for optimizing industrial processes and predicting natural hazards. We provide careful measurements spanning eight orders of magnitude in shear rate, and show that all these rheological regimes can be described qualitatively and quantitatively using the granular integration through transient formalism, a theory for glassy dynamics under shear adapted to granular fluids.
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Submitted 1 September, 2023;
originally announced September 2023.
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Stable electroluminescence in ambipolar dopant-free lateral p-n junctions
Authors:
Lin Tian,
Francois Sfigakis,
Arjun Shetty,
Ho-Sung Kim,
Nachiket Sherlekar,
Sara Hosseini,
Man Chun Tam,
Brad van Kasteren,
Brandon Buonacorsi,
Zach Merino,
Stephen R. Harrigan,
Zbigniew Wasilewski,
Jonathan Baugh,
Michael E. Reimer
Abstract:
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppr…
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Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.
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Submitted 15 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Universal scaling of shear thickening transitions
Authors:
Meera Ramaswamy,
Itay Griniasty,
Danilo B. Liarte,
Abhishek Shetty,
Eleni Katifori,
Emanuela Del Gado,
James P. Sethna,
Bulbul Chakraborty,
Itai Cohen
Abstract:
Nearly all dense suspensions undergo dramatic and abrupt thickening transitions in their flow behaviour when sheared at high stresses. Such transitions occur when the dominant interactions between the suspended particles shift from hydrodynamic to frictional. Here, we interpret abrupt shear thickening as a precursor to a rigidity transition and give a complete theory of the viscosity in terms of a…
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Nearly all dense suspensions undergo dramatic and abrupt thickening transitions in their flow behaviour when sheared at high stresses. Such transitions occur when the dominant interactions between the suspended particles shift from hydrodynamic to frictional. Here, we interpret abrupt shear thickening as a precursor to a rigidity transition and give a complete theory of the viscosity in terms of a universal crossover scaling function from the frictionless jamming point to a rigidity transition associated with friction, anisotropy, and shear. Strikingly, we find experimentally that for two different systems -- cornstarch in glycerol and silica spheres in glycerol -- the viscosity can be collapsed onto a single universal curve over a wide range of stresses and volume fractions. The collapse reveals two separate scaling regimes, due to a crossover between frictionless isotropic jamming and frictional shear jamming, with different critical exponents. The material-specific behaviour due to the microscale particle interactions is incorporated into a scaling variable governing the proximity to shear jamming that depends on both stress and volume fraction. This reformulation opens the door to importing the vast theoretical machinery developed to understand equilibrium critical phenomena to elucidate fundamental physical aspects of the shear thickening transition.
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Submitted 22 May, 2023; v1 submitted 28 July, 2021;
originally announced July 2021.
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Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
Authors:
B. Buonacorsi,
F. Sfigakis,
A. Shetty,
M. C. Tam,
H. S. Kim,
S. R. Harrigan,
F. Hohls,
M. E. Reimer,
Z. R. Wasilewski,
J. Baugh
Abstract:
We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance consideri…
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We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pum** in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.
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Submitted 16 September, 2021; v1 submitted 26 February, 2021;
originally announced February 2021.
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Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
Authors:
A. Shetty,
F. Sfigakis,
W. Y. Mak,
K. Das Gupta,
B. Buonacorsi,
M. C. Tam,
H. S. Kim,
I. Farrer,
A. F. Croxall,
H. E. Beere,
A. R. Hamilton,
M. Pepper,
D. G. Austing,
S. A. Studenikin,
A. Sachrajda,
M. E. Reimer,
Z. R. Wasilewski,
D. A. Ritchie,
J. Baugh
Abstract:
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i…
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Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.
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Submitted 21 December, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
