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Catalytic evolution of cooperation in a population with behavioural bimodality
Authors:
Anhui Sheng,
**g Zhang,
Guozhong Zheng,
Jiqiang Zhang,
Weiran Cai,
Li Chen
Abstract:
The remarkable adaptability of humans in response to complex environments is often demonstrated by the context-dependent adoption of different behavioral modes. However, the existing game-theoretic studies mostly focus on the single-mode assumption, and the impact of this behavioral multimodality on the evolution of cooperation remains largely unknown. Here, we study how cooperation evolves in a p…
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The remarkable adaptability of humans in response to complex environments is often demonstrated by the context-dependent adoption of different behavioral modes. However, the existing game-theoretic studies mostly focus on the single-mode assumption, and the impact of this behavioral multimodality on the evolution of cooperation remains largely unknown. Here, we study how cooperation evolves in a population with two behavioral modes. Specifically, we incorporate Q-learning and Tit-for-Tat (TFT) rules into our toy model, where prisoner's dilemma game is played and we investigate the impact of the mode mixture on the evolution of cooperation. While players in Q-learning mode aim to maximize their accumulated payoffs, players within TFT mode repeat what their neighbors have done to them. In a structured mixing implementation where the updating rule is fixed for each individual, we find that the mode mixture greatly promotes the overall cooperation prevalence. The promotion is even more significant in the probabilistic mixing, where players randomly select one of the two rules at each step. Finally, this promotion is robust when players are allowed to adaptively choose the two modes by real-time comparison. In all three scenarios, players within the Q-learning mode act as catalyzer that turns the TFT players to be more cooperative, and as a result drive the whole population to be highly cooperative. The analysis of Q-tables explains the underlying mechanism of cooperation promotion, which captures the ``psychologic evolution" in the players' mind. Our study indicates that the variety of behavioral modes is non-negligible, and could be crucial to clarify the emergence of cooperation in the real world.
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Submitted 16 June, 2024;
originally announced June 2024.
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Neural Network Solutions of Bosonic Quantum Systems in One Dimension
Authors:
Paulo F. Bedaque,
Hersh Kumar,
Andy Sheng
Abstract:
Neural networks have been proposed as efficient numerical wavefunction ansatze which can be used to variationally search a wide range of functional forms for ground state solutions. These neural network methods are also advantageous in that more variational parameters and system degrees of freedom can be easily added. We benchmark the methodology by using neural networks to study several different…
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Neural networks have been proposed as efficient numerical wavefunction ansatze which can be used to variationally search a wide range of functional forms for ground state solutions. These neural network methods are also advantageous in that more variational parameters and system degrees of freedom can be easily added. We benchmark the methodology by using neural networks to study several different integrable bosonic quantum systems in one dimension and compare our results to the exact solutions. While testing the scalability of the procedure to systems with many particles, we also introduce using symmetric function inputs to the neural network to enforce exchange symmetries of indistinguishable particles.
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Submitted 5 September, 2023;
originally announced September 2023.
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Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics
Authors:
Xiucheng Wei,
Haolei Hui,
Samanthe Perera,
Aaron Sheng,
David F. Watson,
Yi-Yang Sun,
Quanxi Jia,
Shengbai Zhang,
Hao Zeng
Abstract:
BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal…
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BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single junction solar cell. Here we report the synthesis of Ba(Zr1-xTix)S3 perovskite compounds with a reduced band gap. It is found that Ti alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 at% alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.
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Submitted 8 April, 2020;
originally announced April 2020.
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Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics
Authors:
Xiucheng Wei,
Haolei Hui,
Chuan Zhao,
Chenhua Deng,
Mengjiao Han,
Zhonghai Yu,
Aaron Sheng,
Pinku Roy,
Ai** Chen,
Junhao Lin,
David F. Watson,
Yiyang Sun,
Tim Thomay,
Sen Yang,
Quanxi Jia,
Shengbai Zhang,
Hao Zeng
Abstract:
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we repo…
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BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm^-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm^2/Vs. The absorption coefficient is > 10^5 cm-1 at photon energy > 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. These results assure that BaZrS3 is a promising candidate for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.
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Submitted 19 November, 2019; v1 submitted 11 October, 2019;
originally announced October 2019.