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Showing 1–4 of 4 results for author: Sheng, A

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  1. arXiv:2406.11121  [pdf, other

    q-bio.PE cond-mat.dis-nn nlin.AO

    Catalytic evolution of cooperation in a population with behavioural bimodality

    Authors: Anhui Sheng, **g Zhang, Guozhong Zheng, Jiqiang Zhang, Weiran Cai, Li Chen

    Abstract: The remarkable adaptability of humans in response to complex environments is often demonstrated by the context-dependent adoption of different behavioral modes. However, the existing game-theoretic studies mostly focus on the single-mode assumption, and the impact of this behavioral multimodality on the evolution of cooperation remains largely unknown. Here, we study how cooperation evolves in a p… ▽ More

    Submitted 16 June, 2024; originally announced June 2024.

    Comments: 11 pages, 12 figure. Comments are appreciated

  2. arXiv:2309.02352  [pdf, other

    nucl-th cond-mat.dis-nn cond-mat.quant-gas quant-ph

    Neural Network Solutions of Bosonic Quantum Systems in One Dimension

    Authors: Paulo F. Bedaque, Hersh Kumar, Andy Sheng

    Abstract: Neural networks have been proposed as efficient numerical wavefunction ansatze which can be used to variationally search a wide range of functional forms for ground state solutions. These neural network methods are also advantageous in that more variational parameters and system degrees of freedom can be easily added. We benchmark the methodology by using neural networks to study several different… ▽ More

    Submitted 5 September, 2023; originally announced September 2023.

    Comments: 12 pages, 8 figures

  3. arXiv:2004.04261  [pdf

    cond-mat.mtrl-sci

    Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics

    Authors: Xiucheng Wei, Haolei Hui, Samanthe Perera, Aaron Sheng, David F. Watson, Yi-Yang Sun, Quanxi Jia, Shengbai Zhang, Hao Zeng

    Abstract: BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal… ▽ More

    Submitted 8 April, 2020; originally announced April 2020.

  4. arXiv:1910.04978  [pdf

    cond-mat.mtrl-sci cond-mat.other

    Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics

    Authors: Xiucheng Wei, Haolei Hui, Chuan Zhao, Chenhua Deng, Mengjiao Han, Zhonghai Yu, Aaron Sheng, Pinku Roy, Ai** Chen, Junhao Lin, David F. Watson, Yiyang Sun, Tim Thomay, Sen Yang, Quanxi Jia, Shengbai Zhang, Hao Zeng

    Abstract: BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we repo… ▽ More

    Submitted 19 November, 2019; v1 submitted 11 October, 2019; originally announced October 2019.