Showing 1–37 of 37 results for author: Shao, Q

Wideband Coherent Microwave Conversion via Magnon Nonlinearity in Hybrid Quantum System

Authors: Jiahao Wu, Jiacheng Liu, Zheyu Ren, Man Yin Leung, Wai Kuen Leung, Kin On Ho, Xiangrong Wang, Qiming Shao, Sen Yang

Abstract: Frequency conversion is a widely realized physical process in nonlinear systems of optics and electronics. As an emerging nonlinear platform, spintronic devices have the potential to achieve stronger frequency conversion. Here, we demonstrated a microwave frequency conversion method in a hybrid quantum system, integrating nitrogen-vacancy centers in diamond with magnetic thin film CoFeB. We achiev… ▽ More Frequency conversion is a widely realized physical process in nonlinear systems of optics and electronics. As an emerging nonlinear platform, spintronic devices have the potential to achieve stronger frequency conversion. Here, we demonstrated a microwave frequency conversion method in a hybrid quantum system, integrating nitrogen-vacancy centers in diamond with magnetic thin film CoFeB. We achieve a conversion bandwidth ranging from 0.1 to 12GHz, presenting an up to $\mathrm{25^{th}}$ order frequency conversion and further display the application of this method for frequency detection and qubits coherent control. Distinct from traditional frequency conversion techniques based on nonlinear electric response, our approach employs nonlinear magnetic response in spintronic devices. The nonlinearity, originating from the symmetry breaking such as domain walls in magnetic films, presents that our method can be adapted to hybrid systems of other spintronic devices and spin qubits, expanding the application scope of spintronic devices and providing a promising on-chip platform for coupling quantum systems. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Comments: 11 pages, 5 figures

Journal ref: npj Spintronics volume 2, Article number: 30 (2024)

Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure

Authors: Yiyang Zhang, Xiaolin Ren, Ruizi Liu, Zehan Chen, Xuezhao Wu, Jie Pang, Wei Wang, Guibin Lan, Kenji Watanabe, Takashi Taniguchi, Youguo Shi, Guoqiang Yu, Qiming Shao

Abstract: The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in… ▽ More The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 10^10 A per m2 at 300K and a large SOT efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices. △ Less

Submitted 10 May, 2024; originally announced May 2024.

Strong magnon-magnon coupling in an ultralow dam** all-magnetic-insulator heterostructure

Authors: Jiacheng Liu, Yuzan Xiong, **gming Liang, Xuezhao Wu, Chen Liu, Shun Kong Cheung, Zheyu Ren, Ruizi Liu, Andrew Christy, Zehan Chen, Ferris Prima Nugraha, Xi-Xiang Zhang, Chi Wah Leung, Wei Zhang, Qiming Shao

Abstract: Magnetic insulators such as yttrium iron garnets (YIGs) are of paramount importance for spin-wave or magnonic devices as their ultralow dam** enables ultralow power dissipation that is free of Joule heating, exotic magnon quantum state, and coherent coupling to other wave excitations. Magnetic insulator heterostructures bestow superior structural and magnetic properties and house immense design… ▽ More Magnetic insulators such as yttrium iron garnets (YIGs) are of paramount importance for spin-wave or magnonic devices as their ultralow dam** enables ultralow power dissipation that is free of Joule heating, exotic magnon quantum state, and coherent coupling to other wave excitations. Magnetic insulator heterostructures bestow superior structural and magnetic properties and house immense design space thanks to the strong and engineerable exchange interaction between individual layers. To fully unleash their potential, realizing low dam** and strong exchange coupling simultaneously is critical, which often requires high quality interface. Here, we show that such a demand is realized in an all-insulator thulium iron garnet (TmIG)/YIG bilayer system. The ultralow dissipation rates in both YIG and TmIG, along with their significant spin-spin interaction at the interface, enable strong and coherent magnon-magnon coupling with a benchmarking cooperativity value larger than the conventional ferromagnetic metal-based heterostructures. The coupling strength can be tuned by varying the magnetic insulator layer thickness and magnon modes, which is consistent with analytical calculations and micromagnetic simulations. Our results demonstrate TmIG/YIG as a novel platform for investigating hybrid magnonic phenomena and open opportunities in magnon devices comprising all-insulator heterostructures. △ Less

Submitted 6 September, 2023; originally announced September 2023.

Comments: 45 pages, 18 figures, and 2 tables

Experimental evidence for Berry curvature multipoles in antiferromagnets

Authors: Soumya Sankar, Ruizi Liu, Xue-Jian Gao, Qi-Fang Li, Caiyun Chen, Cheng-** Zhang, Jiangchang Zheng, Yi-Hsin Lin, Kun Qian, Ruo-Peng Yu, Xu Zhang, Zi Yang Meng, Kam Tuen Law, Qiming Shao, Berthold Jäck

Abstract: Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest in novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of Berry curvature multipoles extends our understanding of Berry curvature effects on the material properties. Hence, research on this subject is of fundamental importance and may a… ▽ More Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest in novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of Berry curvature multipoles extends our understanding of Berry curvature effects on the material properties. Hence, research on this subject is of fundamental importance and may also enable future applications in energy harvesting and high-frequency technology. It was shown that a Berry curvature dipole can give rise to a 2nd order NLAHE in materials of low crystalline symmetry. Here, we demonstrate a fundamentally new mechanism for Berry curvature multipoles in antiferromagnets that are supported by the underlying magnetic symmetries. Carrying out electric transport measurements on the kagome antiferromagnet FeSn, we observe a 3rd order NLAHE, which appears as a transverse voltage response at the 3rd harmonic frequency when a longitudinal a.c. current drive is applied. Interestingly, this NLAHE is strongest at and above room temperature. We combine these measurements with a scaling law analysis, a symmetry analysis, model calculations, first-principle calculations, and magnetic Monte-Carlo simulations to show that the observed NLAHE is induced by a Berry curvature quadrupole appearing in the spin-canted state of FeSn. At a practical level, our study establishes NLAHE as a sensitive probe of antiferromagnetic phase transitions in other materials, such as moiré superlattices, two-dimensional van der Waal magnets, and quantum spin liquid candidates, that remain poorly understood to date. More broadly, Berry curvature multipole effects are predicted to exist for 90 magnetic point groups. Hence, our work opens a new research area to study a variety of topological magnetic materials through nonlinear measurement protocols. △ Less

Submitted 8 October, 2023; v1 submitted 6 March, 2023; originally announced March 2023.

Cryogenic in-memory computing using tunable chiral edge states

Authors: Yuting Liu, Albert Lee, Kun Qian, Peng Zhang, Haoran He, Zheyu Ren, Shun Kong Cheung, Yaoyin Li, Xu Zhang, Zichao Ma, Zhihua Xiao, Guoqiang Yu, Xin Wang, Junwei Liu, Zhongrui Wang, Kang L. Wang, Qiming Shao

Abstract: Energy-efficient hardware implementation of machine learning algorithms for quantum computation requires nonvolatile and electrically-programmable devices, memristors, working at cryogenic temperatures that enable in-memory computing. Magnetic topological insulators are promising candidates due to their tunable magnetic order by electrical currents with high energy efficiency. Here, we utilize mag… ▽ More Energy-efficient hardware implementation of machine learning algorithms for quantum computation requires nonvolatile and electrically-programmable devices, memristors, working at cryogenic temperatures that enable in-memory computing. Magnetic topological insulators are promising candidates due to their tunable magnetic order by electrical currents with high energy efficiency. Here, we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a chiral edge state-based cryogenic in-memory computing scheme. On the one hand, the chiral edge state can be tuned from left-handed to right-handed chirality through spin-momentum locked topological surface current injection. On the other hand, the chiral edge state exhibits giant and bipolar anomalous Hall resistance, which facilitates the electrical readout. The memristive switching and reading of the chiral edge state exhibit high energy efficiency, high stability, and low stochasticity. We achieve high accuracy in a proof-of-concept classification task using four magnetic topological memristors. Furthermore, our algorithm-level and circuit-level simulations of large-scale neural networks based on magnetic topological memristors demonstrate a software-level accuracy and lower energy consumption for image recognition and quantum state preparation compared with existing memristor technologies. Our results may inspire further topological quantum physics-based novel computing schemes. △ Less

Submitted 19 September, 2022; originally announced September 2022.

Comments: 33 pages, 12 figures

Nonreciprocal dynamics of ferrimagnetic bimerons

Authors: Laichuan Shen, **g Xia, Zehan Chen, Xiaoguang Li, Xichao Zhang, Oleg A. Tretiakov, Qiming Shao, Guo** Zhao, Xiaoxi Liu, Motohiko Ezawa, Yan Zhou

Abstract: Magnetic bimerons are topologically nontrivial spin textures in in-plane easy-axis magnets, which can be used as particle-like information carriers. Here, we report a theoretical study on the nonreciprocal dynamics of asymmetrical ferrimagnetic (FiM) bimerons induced by spin currents. The FiM bimerons have the ability to move at a speed of kilometers per second and do not show the skyrmion Hall ef… ▽ More Magnetic bimerons are topologically nontrivial spin textures in in-plane easy-axis magnets, which can be used as particle-like information carriers. Here, we report a theoretical study on the nonreciprocal dynamics of asymmetrical ferrimagnetic (FiM) bimerons induced by spin currents. The FiM bimerons have the ability to move at a speed of kilometers per second and do not show the skyrmion Hall effect at the angular momentum compensation point. Our micromagnetic simulations and analytical results demonstrate that spin currents are able to induce the nonreciprocal transport and a drift motion of the FiM bimeron even if the system is at the angular momentum compensation point. By analyzing the current-induced effective fields, we find that the nonreciprocal transport is attributed to the asymmetry of the bimeron structure. Our results are useful for understanding the physics of bimerons in ferrimagnets and may provide guidelines for building bimeron-based spintronic devices. △ Less

Submitted 10 January, 2022; originally announced January 2022.

Comments: 7 pages, 4 figures

Journal ref: Physical Review B 105, 014422 (2022)

Skyrmion Dynamics in the Presence of Deformation

Authors: Zehan Chen, Xichao Zhang, Yan Zhou, Qiming Shao

Abstract: Magnetic skyrmions are topological spin textures promising for future high-density and nonvolatile memory. It is crucial to understand the current-driven skyrmion dynamics in the presence of deformation, of which an analytical model, however, remains elusive. Here we extend Thiele's model by considering both the radial and tangential forces. Our model attributes the skyrmion deformation to the cur… ▽ More Magnetic skyrmions are topological spin textures promising for future high-density and nonvolatile memory. It is crucial to understand the current-driven skyrmion dynamics in the presence of deformation, of which an analytical model, however, remains elusive. Here we extend Thiele's model by considering both the radial and tangential forces. Our model attributes the skyrmion deformation to the current-induced rotational symmetry breaking, which includes magnetization canting and domain wall width variation. Our predictions of skyrmion radius and nonlinear dynamics are consistent with micromagnetic simulation results. Besides, we show that by applying an in-plane magnetic field, the deformation of a skyrmion can be suppressed, and even the compression of a skyrmion can be achieved. Our model provides a generic way to analyze the skyrmion deformation and may inspire applications based on nonlinear skyrmion dynamics. △ Less

Submitted 7 December, 2021; originally announced December 2021.

Comments: accepted by Physical Review Applied

Journal ref: Phys. Rev. Applied 17, L011002 (2022)

Spintronic memristors for computing

Authors: Qiming Shao, Zhongrui Wang, Yan Zhou, Shunsuke Fukami, Damien Querlioz, Yiran Chen, Leon O. Chua

Abstract: The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware system… ▽ More The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware systems to handle data-centric tasks. Spintronic nanodevices are promising choices as they are high-speed, low-power, highly scalable, robust, and capable of constructing dynamic complex systems. In this Review, we survey spintronic devices from a memristor point of view. We introduce spintronic memristors based on magnetic tunnel junctions, nanomagnet ensemble, domain walls, topological spin textures, and spin waves, which represent dramatically different state spaces. They can exhibit steady, oscillatory, stochastic, and chaotic trajectories in their state spaces, which have been exploited for in-memory logic, neuromorphic computing, stochastic and chaos computing. Finally, we discuss challenges and trends in realizing large-scale spintronic memristive systems for practical applications. △ Less

Submitted 21 April, 2024; v1 submitted 6 December, 2021; originally announced December 2021.

Comments: major update; comments and suggestions are welcome

On the Temperature-dependent Characteristics of Perpendicular Shape Anisotropy-Spin Transfer Torque-Magnetic Random Access Memories (PSA-STT-MRAMs)

Authors: Wei Zhang, Zihan Tong, Yuzan Xiong, Weigang Wang, Qiming Shao

Abstract: The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the nanomagnet. Such a concept is particularly well-suited for small junctions down to a few nanometers. At such a volume size, the nanopillar can be effectively modeled… ▽ More The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the nanomagnet. Such a concept is particularly well-suited for small junctions down to a few nanometers. At such a volume size, the nanopillar can be effectively modeled as a Stoner-Wohlfarth (SW) particle, and the shape anisotropy scales with the spontaneous magnetization by ~ Ms^2. For almost all ferromagnets, Ms is a strong function of temperature, therefore, the temperature-dependent shape anisotropy is an important factor to be considered in any modeling of the temperature-dependent performance of PSA-STT-MRAMs. In this work, we summarize and discuss various possible temperature-dependent contributions to the thermal stability factor and coercivity of the PSA-STT-MRAMs by modeling and comparing different temperature scaling and parameters. We reveal nontrivial corrections to the thermal stability factor by considering both temperature-dependent shape and interfacial anisotropies. The coercivity, blocking temperature, and electrical switching characteristics that resulted from incorporating such a temperature dependence are also discussed, in conjugation with the nanomagnet dimension and coherence volume. △ Less

Submitted 17 May, 2021; originally announced May 2021.

Comments: 11 pages, 9 figures

Roadmap of spin-orbit torques

Authors: Qiming Shao, Peng Li, Luqiao Liu, Hyunsoo Yang, Shunsuke Fukami, Armin Razavi, Hao Wu, Kang L. Wang, Frank Freimuth, Yuriy Mokrousov, Mark D. Stiles, Satoru Emori, Axel Hoffmann, Johan Åkerman, Kaushik Roy, Jian-** Wang, See-Hun Yang, Kevin Garello, Wei Zhang

Abstract: Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials hav… ▽ More Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors. △ Less

Submitted 6 May, 2021; v1 submitted 23 April, 2021; originally announced April 2021.

Comments: an invited paper in the "Advances in Magnetics" series

Temperature dependence of the dam** parameter in the ferrimagnet Gd$_3$Fe$_5$O$_{12}$

Authors: Isaac Ng, Ruizi Liu, Zheyu Ren, Se Kwon Kim, Qiming Shao

Abstract: The dam** parameter $α_{\text{FM}}$ in ferrimagnets defined according to the conventional practice for ferromagnets is known to be strongly temperature dependent and diverge at the angular momentum compensation temperature, where the net angular momentum vanishes. However, recent theoretical and experimental developments on ferrimagnetic metals suggest that the dam** parameter can be defined i… ▽ More The dam** parameter $α_{\text{FM}}$ in ferrimagnets defined according to the conventional practice for ferromagnets is known to be strongly temperature dependent and diverge at the angular momentum compensation temperature, where the net angular momentum vanishes. However, recent theoretical and experimental developments on ferrimagnetic metals suggest that the dam** parameter can be defined in such a way, which we denote by $α_{\text{FiM}}$, that it is free of the diverging anomaly at the angular momentum compensation point and is little dependent on temperature. To further understand the temperature dependence of the dam** parameter in ferrimagnets, we analyze several data sets from literature for a ferrimagnetic insulator, gadolinium iron garnet, by using the two different definitions of the dam** parameter. Using two methods to estimate the individual sublattice magnetizations, which yield results consistent with each other, we found that in all the used data sets, the dam** parameter $α_{\text{FiM}}$ does not increase at the angular compensation temperature and shows no anomaly whereas the conventionally defined $α_{\text{FM}}$ is strongly dependent on the temperature. △ Less

Submitted 30 September, 2021; v1 submitted 25 September, 2020; originally announced September 2020.

Comments: Comments are welcome

Journal ref: IEEE Transactions on Magnetics (2022)

Two-Dimensional Materials for Energy-Efficient Spin-Orbit Torque Devices

Authors: Yuting Liu, Qiming Shao

Abstract: Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices using SOTs is to enhance the charge to spin conversion efficiency. Besides, the current-induced spin polarization is usually limited to in-plane, whereas out-of-… ▽ More Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices using SOTs is to enhance the charge to spin conversion efficiency. Besides, the current-induced spin polarization is usually limited to in-plane, whereas out-of-plane spin polarization could be favored for efficient perpendicular magnetization switching. Recent advances in utilizing two important classes of van der Waals materials$-$topological insulators and transition-metal dichalcogenides$-$as spin sources to generate SOT shed light on addressing these challenges. Topological insulators such as bismuth selenide have shown a giant SOT efficiency, which is larger than those from three-dimensional heavy metals by at least one order of magnitude. Transition-metal dichalcogenides such as tungsten telluride have shown a current-induced out-of-plane spin polarization, which is allowed by the reduced symmetry. In this review, we use symmetry arguments to predict and analyze SOTs in van der Waal material-based heterostructures. We summarize the recent progress of SOT studies based on topological insulators and transition-metal dichalcogenides and show how these results are in line with the symmetry arguments. At last, we identify unsolved issues in the current studies and suggest three potential research directions in this field. △ Less

Submitted 5 July, 2020; v1 submitted 26 March, 2020; originally announced March 2020.

Comments: Comments are welcome

Dynamics of an elliptical ferromagnetic skyrmion driven by the spin-orbit torque

Authors: **g Xia, Xichao Zhang, Motohiko Ezawa, Qiming Shao, Xiaoxi Liu, Yan Zhou

Abstract: Magnetic skyrmion is a promising building block for develo** information storage and computing devices. It can be stabilized in a ferromagnetic thin film with the Dzyaloshinskii-Moriya interaction (DMI). The moving ferromagnetic skyrmion may show the skyrmion Hall effect, that is, the skyrmion shows a transverse shift when it is driven by a spin current. Here, we numerically and theoretically st… ▽ More Magnetic skyrmion is a promising building block for develo** information storage and computing devices. It can be stabilized in a ferromagnetic thin film with the Dzyaloshinskii-Moriya interaction (DMI). The moving ferromagnetic skyrmion may show the skyrmion Hall effect, that is, the skyrmion shows a transverse shift when it is driven by a spin current. Here, we numerically and theoretically study the current-driven dynamics of a ferromagnetic nanoscale skyrmion in the presence of the anisotropic DMI, where the skyrmion has an elliptical shape. The skyrmion Hall effect of the elliptical skyrmion is investigated. It is found that the skyrmion Hall angle can be controlled by tuning the profile of elliptical skyrmion. Our results reveal the relation between the skyrmion shape and the skyrmion Hall effect, which could be useful for building skyrmion-based spintronic devices with preferred skyrmion Hall angle. Also, our results provide a method for the minimization of skyrmion Hall angle for applications based on in-line motion of skyrmions. △ Less

Submitted 6 January, 2020; v1 submitted 21 October, 2019; originally announced October 2019.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 116, 022407 (2020)

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

Authors: Yingying Wu, Senfu Zhang, Gen Yin, Junwei Zhang, Wei Wang, Yang Lin Zhu, ** Hu, Kin Wong, Chi Fang, Caihua Wan, Xiufeng Han, Qiming Shao, Takashi Taniguchi, Kenji Watanabe, Jiadong Zang, Zhiqiang Mao, Xixiang Zhang, Kang L. Wang

Abstract: The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offe… ▽ More The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures. △ Less

Submitted 8 January, 2020; v1 submitted 25 July, 2019; originally announced July 2019.

Comments: 32 pages, 4 figures in the main text

Journal ref: Nature Communications 11, Article number: 3860 (2020)

Phase-Change Control of Interlayer Exchange Coupling

Authors: Xiaofei Fan, Guodong Wei, Xiaoyang Lin, Xinhe Wang, Zhizhong Si, Xueying Zhang, Qiming Shao, Stephane Mangin, Eric Fullerton, Lei Jiang, Weisheng Zhao

Abstract: Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magn… ▽ More Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magnetic anisotropy. The successful growth of ultra-thin (several nanometres) VO2 films is realized by sputtering at room temperature, which further enables the fabrication of [Pt/Co]2/VO2/[Co/Pt]2 multilayers with distinct interfaces. Such a magnetic multilayer exhibits an evolution from antiferromagnetic coupling to ferromagnetic coupling as the VO2 undergoes a phase change. The underlying mechanism originates from the change in the electronic structure of the spacer layer from an insulating to a metallic state. As a demonstration of phase change spintronics, this work may reveal the great potential of material innovations for next-generation spintronics. △ Less

Submitted 20 August, 2019; v1 submitted 24 July, 2019; originally announced July 2019.

Journal ref: Matter, 2020 (online)

Topological Hall effect at above room temperature in heterostructures composed of a magnetic insulator and a heavy metal

Authors: Qiming Shao, Yawen Liu, Guoqiang Yu, Se Kwon Kim, Xiaoyu Che, Chi Tang, Qing Lin He, Yaroslav Tserkovnyak, **g Shi, Kang L. Wang

Abstract: Non-volatile memory and computing technology rely on efficient read and write of ultra-tiny information carriers that do not wear out. Magnetic skyrmions are emerging as a potential carrier since they are topologically robust nanoscale spin textures that can be manipulated with ultralow current density. To date, most of skyrmions are reported in metallic films, which suffer from additional Ohmic l… ▽ More Non-volatile memory and computing technology rely on efficient read and write of ultra-tiny information carriers that do not wear out. Magnetic skyrmions are emerging as a potential carrier since they are topologically robust nanoscale spin textures that can be manipulated with ultralow current density. To date, most of skyrmions are reported in metallic films, which suffer from additional Ohmic loss and thus high energy dissipation. Therefore, skyrmions in magnetic insulators are of technological importance for low-power information processing applications due to their low dam** and the absence of Ohmic loss. Moreover, they attract fundamental interest in studying various magnon-skyrmion interactions11. Skyrmions have been observed in one insulating material Cu2OSeO3 at cryogenic temperatures, where they are stabilized by bulk Dzyaloshinskii-Moriya interaction. Here, we report the observation of magnetic skyrmions that survive above room temperature in magnetic insulator/heavy metal heterostructures, i.e., thulium iron garnet/platinum. The presence of these skyrmions results from the Dzyaloshinskii-Moriya interaction at the interface and is identified by the emergent topological Hall effect. Through tuning the magnetic anisotropy via varying temperature, we observe skyrmions in a large window of external magnetic field and enhanced stability of skyrmions in the easy-plane anisotropy regime. Our results will help create a new platform for insulating skyrmion-based room temperature low dissipation spintronic applications. △ Less

Submitted 15 April, 2019; originally announced April 2019.

Comments: Initially submitted version on 10/03/2018 with a revised arXiv webpage title

Journal ref: Nature Electronics 2, 182-186 (2019)

Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2

Authors: Mohammed Alghamdi, Mark Lohmann, Junxue Li, Palani R. Jothi, Qiming Shao, Mohammed Aldosary, Tang Su, Boniface Fokwa, **g Shi

Abstract: Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spin-orbit torques (SOT). Its metallicity, strong perpendicular magnetic anisotropy built in the single atomic layers, relatively high Curie temperature (Tc about 225 K) and electrostatic gate tunability offer a tantalizing possibilit… ▽ More Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spin-orbit torques (SOT). Its metallicity, strong perpendicular magnetic anisotropy built in the single atomic layers, relatively high Curie temperature (Tc about 225 K) and electrostatic gate tunability offer a tantalizing possibility of achieving the ultimate high SOT limit in monolayer all-vdW nanodevices. The spin current generated in Pt exerts a dam**-like SOT on FGT magnetization. At about 2.5x1011 A/m2 current density,SOT causes the FGT magnetization to switch, which is detected by the anomalous Hall effect of FGT. To quantify the SOT effect, we measure the second harmonic Hall responses as the applied magnetic field rotates the FGT magnetization in the plane. Our analysis shows that the SOT efficiency is comparable with that of the best heterostructures containing three-dimensional (3D) ferromagnetic metals and much larger than that of heterostructures containing 3D ferrimagnetic insulators. Such large efficiency is attributed to the atomically flat FGT/Pt interface, which demonstrates the great potential of exploiting vdW heterostructures for highly efficient spintronic nanodevices. △ Less

Submitted 1 March, 2019; originally announced March 2019.

Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition-Metal Dichalcogenide/Ferromagnet Bilayers

Authors: Qiming Shao, Guoqiang Yu, Yann-Wen Lan, Yumeng Shi, Ming-Yang Li, Cheng Zheng, Xiaodan Zhu, Lain-Jong Li, Pedram Khalili Amiri, Kang L. Wang

Abstract: The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So fa… ▽ More The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS$_2$ or WSe$_2$)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials. △ Less

Submitted 20 November, 2018; originally announced November 2018.

Comments: accepted version

Journal ref: Nano Letters, 16, 7514 (2016)

Exploring interfacial exchange coupling and sublattice effect in heavy metal/ferrimagnetic insulator heterostructures using Hall measurements, x-ray magnetic circular dichroism, and neutron reflectometry

Authors: Qiming Shao, Alexander Grutter, Yawen Liu, Guoqiang Yu, Chao-Yao Yang, Dustin A. Gilbert, Elke Arenholz, Padraic Shafer, Xiaoyu Che, Chi Tang, Mohammed Aldosary, Aryan Navabi, Qing Lin He, Brian J. Kirby, **g Shi, Kang L. Wang

Abstract: We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provid… ▽ More We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provides essential information regarding the interfacial exchange coupling. Onset of a magnetic proximity effect yields a local extremum in the temperature-dependent anomalous Hall signal, which occurs at higher temperature as magnetic insulator thickness increases. This magnetic proximity effect onset occurs at much higher temperature in Pt than W. The magnetization compensation point is identified by a sharp anomalous Hall sign change and divergent coercive field. We directly probe the magnetic proximity effect using x-ray magnetic circular dichroism and polarized neutron reflectometry, which reveal an antiferromagnetic coupling between W and the magnetic insulator. Finally, we summarize the exchange-coupling configurations and the anomalous Hall-effect sign of the magnetized heavy metal in various heavy metal/magnetic insulator heterostructures. △ Less

Submitted 26 February, 2019; v1 submitted 20 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 104401 (2019)

Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films

Authors: Qiming Shao, Chi Tang, Guoqiang Yu, Aryan Navabi, Hao Wu, Congli He, Junxue Li, Pramey Upadhyaya, Peng Zhang, Seyed Armin Razavi, Qing Lin He, Yawen Liu, Pei Yang, Se Kwon Kim, Cheng Zheng, Yizhou Liu, Lei Pan, Roger Lake, Xiufeng Han, Yaroslav Tserkovnyak, **g Shi, Kang L. Wang

Abstract: Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert dam** and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated through spin Hall effect and Rashba-Edelstein effect in heavy metal/MI bilayers. SOTs on MIs are more intriguing than magnetic metals since SOTs cannot be transferred… ▽ More Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert dam** and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated through spin Hall effect and Rashba-Edelstein effect in heavy metal/MI bilayers. SOTs on MIs are more intriguing than magnetic metals since SOTs cannot be transferred to MIs through direct injection of electron spins. Understanding of SOTs on MIs remains elusive, especially how SOTs scale with the film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by systematically studying the MI layer thickness dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We first show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases, due to the suppression of long-wavelength thermal fluctuation. Then, we report the significant enhancement of the measured SOT efficiency as the thickness increases. We attribute this effect to the increase of the magnetic moment density in concert with the suppression of thermal fluctuations. At last, we demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm. The switching current density is comparable with those of heavy metal/ferromagnetic metal cases. Our findings shed light on the understanding of SOTs in MIs, which is important for the future development of ultrathin MI-based low-power spintronics. △ Less

Submitted 29 January, 2018; v1 submitted 24 August, 2017; originally announced August 2017.

Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures

Authors: Junxue Li, Guoqiang Yu, Chi Tang, Yizhou Liu, Zhong Shi, Yawen Liu, Aryan Navabi, Mohammed Aldosary, Qiming Shao, Kang L. Wang, Roger Lake, **g Shi

Abstract: Electrical currents in a magnetic insulator/heavy metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy metal side and spin-orbit torques (SOTs) on the magnetic insulator side. Within the framework of the pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to… ▽ More Electrical currents in a magnetic insulator/heavy metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy metal side and spin-orbit torques (SOTs) on the magnetic insulator side. Within the framework of the pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the field-like torque (FLT) to dam**-like torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Pt heterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between measured effective fields of FLT and DLT is at least 2 times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic insulator/heavy metal heterostructures. △ Less

Submitted 24 May, 2017; originally announced May 2017.

Topological transitions induced by antiferromagnetism in a thin-film topological insulator

Authors: Qing Lin He, Gen Yin, Luyan Yu, Alexander J. Grutter, Lei Pan, Xufeng Kou, Xiaoyu Che, Guoqiang Yu, Tianxiao Nie, Bin Zhang, Qiming Shao, Koichi Murata, Xiaodan Zhu, Yabin Fan, Xiaodong Han, Brian J. Kirby, Kang L. Wang

Abstract: Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through pr… ▽ More Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through proximity couplings. During the magnetization reversal in a field scan, two intermediate spin configurations stem from unsynchronized magnetic switchings of the top and the bottom AFM/TI interfaces. These magnetic configurations are shown to result in new topological phases with non-zero Chern numbers for each surface, introducing two counter-propagating chiral edge modes inside the exchange gap. This change in the number of transport channels, as the result of the topological transitions, induces antisymmetric magneto-resistance spikes during the magnetization reversal. With the high Neel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists in transport measurements up to a temperature of around 90 K, a factor of three over the Curie temperature in a typical magnetically doped TI thin film. △ Less

Submitted 5 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. Lett. 121, 096802 (2018)

Chiral Majorana edge state in a quantum anomalous Hall insulator-superconductor structure

Authors: Qing Lin He, Lei Pan, Alexander L. Stern, Edward Burks, Xiaoyu Che, Gen Yin, **g Wang, Biao Lian, Quan Zhou, Eun Sang Choi, Koichi Murata, Xufeng Kou, Tianxiao Nie, Qiming Shao, Yabin Fan, Shou-Cheng Zhang, Kai Liu, **g Xia, Kang L. Wang

Abstract: After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A s… ▽ More After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A series of topological phase changes are controlled by the reversal of the magnetization, where a half-integer quantized conductance plateau (0.5e2/h) is observed as a clear signature of the Majorana phase. This transport signature can be well repeated during many magnetic reversal sweeps, and can be tracked at different temperatures, providing a promising evidence of the chiral Majorana edge modes in the system. △ Less

Submitted 17 June, 2016; originally announced June 2016.

Comments: 20 pages, 3 figures

Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures

Authors: Qing Lin He, Xufeng Kou, Alexander J. Grutter, Lei Pan, Xiaoyu Che, Yuxiang Liu, Tianxiao Nie, Steven M. Disseler, Brian J. Kirby, William Ratcliff II, Qiming Shao, Koichi Murata, Yabin Fan, Mohammad Montazeri, Julie A. Borchers, Kang L. Wang

Abstract: Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineeri… ▽ More Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topological surface massive Dirac fermions. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics. △ Less

Submitted 16 May, 2016; originally announced May 2016.

Comments: 25 pages, 4 figures

Electric-field control of spin-orbit torque in a magnetically doped topological insulator

Authors: Yabin Fan, Xufeng Kou, Pramey Upadhyaya, Qiming Shao, Lei Pan, Murong Lang, Xiaoyu Che, Jianshi Tang, Mohammad Montazeri, Koichi Murata, Li-Te Chang, Mustafa Akyol, Guoqiang Yu, Tianxiao Nie, Kin L. Wong, Jun Liu, Yong Wang, Yaroslav Tserkovnyak, Kang L. Wang

Abstract: Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-fiel… ▽ More Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate FET structure. The SOT strength can be modulated by a factor of 4 within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies. △ Less

Submitted 23 November, 2015; originally announced November 2015.

Comments: 22 pages, 4 figures

Engineering the coupling between Majorana bound states

Authors: Z. C. Shi, X. Q. Shao, Y. Xia, X. X. Yi

Abstract: We study the coupling between Majorana bound states (CMBS), which is mediated by a topologically trivial chain in the presence of pairing coupling and long-range coupling. The results show that CMBS can be enhanced by the pairing coupling and long-range coupling of the trivial chain. When driving the trivial chain by periodic driving field, we deduce the analytical expressions of CMBS in the high-… ▽ More We study the coupling between Majorana bound states (CMBS), which is mediated by a topologically trivial chain in the presence of pairing coupling and long-range coupling. The results show that CMBS can be enhanced by the pairing coupling and long-range coupling of the trivial chain. When driving the trivial chain by periodic driving field, we deduce the analytical expressions of CMBS in the high-frequency limit, and demonstrate that CMBS can be modulated by the frequency and amplitude of driving field. Finally we exhibit the application of tunable CMBS in realizing quantum logic gates. △ Less

Submitted 12 August, 2017; v1 submitted 13 July, 2015; originally announced July 2015.

Comments: 8 pages, 8 figures

Metal-to-Insulator Switching in Quantum Anomalous Hall States

Authors: Xufeng Kou, Lei Pan, **g Wang, Yabin Fan, Eun Sang Choi, Wei-Li Lee, Tianxiao Nie, Koichi Murata, Qiming Shao, Shou-Cheng Zhang, Kang L. Wang

Abstract: After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudi… ▽ More After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the 6 quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is realized through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. In addition, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications. △ Less

Submitted 23 September, 2015; v1 submitted 13 March, 2015; originally announced March 2015.

Journal ref: Nature Communications 6:8474 (2015)

Compact Model of Nanowire Tunneling FETs Including Phonon-Assisted Tunneling and Quantum Capacitance

Authors: Qiming Shao, Can Zhao, **yu Zhang, Li Zhang, Zhi** Yu

Abstract: A physics-based compact model for silicon gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) with good accuracy has been developed by considering Phonon-Assisted Tunneling (PAT) and transition from Quantum Capacitance Limit (QCL) to Classical Limit (CL) during the device-size scaling. The impact of PAT results in the broadening of a single electron-energy level to an energy band with density… ▽ More A physics-based compact model for silicon gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) with good accuracy has been developed by considering Phonon-Assisted Tunneling (PAT) and transition from Quantum Capacitance Limit (QCL) to Classical Limit (CL) during the device-size scaling. The impact of PAT results in the broadening of a single electron-energy level to an energy band with density-of-states (DOS) distribution of Lorentzian shape. As a consequence, the tunneling probability at the edge of tunneling window no longer changes abruptly from zero to having a finite value. By adjusting the parameters in the Lorentzian function, an accurate fitting to the measured transfer characteristics in the subthreshold region is made possible. Besides, with an analytical formula to calculate the channel potential, the model is able to cover naturally the transition from QCL to CL regime when the device size is scaled. Furthermore, on-voltage is defined to facilitate the modeling and fitting processes. Comparisons with the experimental data demonstrate the model accuracy across all device operation regions and the flexibility in model parameter extraction is also shown. △ Less

Submitted 5 December, 2014; originally announced December 2014.

Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit

Authors: Xufeng Kou, Shih-Ting Guo, Yabin Fan, Lei Pan, Murong Lang, Ying Jiang, Qiming Shao, Tianxiao Nie, Koichi Murata, Jianshi Tang, Yong Wang, Liang He, Ting-Kuo Lee, Wei-Li Lee, Kang L. Wang

Abstract: We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of e2/h is found to persist even when the film thickness is beyond the two-dimensional (2D) hybridization limit. Meanwhile, the Chern insulator-featured chiral ed… ▽ More We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of e2/h is found to persist even when the film thickness is beyond the two-dimensional (2D) hybridization limit. Meanwhile, the Chern insulator-featured chiral edge conduction is manifested by the non-local transport measurements. In contrast to the 2D hybridized thin film, an additional weakly field-dependent longitudinal resistance is observed in the 10 quintuple-layer film, suggesting the influence of the film thickness on the dissipative edge channel in the QAHE regime. The extension of QAHE into the three-dimensional thickness region addresses the universality of this quantum transport phenomenon and motivates the exploration of new QAHE phases with tunable Chern numbers. In addition, the observation of the scale-invariant dissipationless chiral propagation on a macroscopic scale makes a major stride towards ideal low-power interconnect applications. △ Less

Submitted 5 August, 2014; v1 submitted 31 May, 2014; originally announced June 2014.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. Lett. 113, 137201 (2014)

A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering

Authors: Aqing Chen, Kaigui Zhu, Huicai Zhong, Qingyi Sha, Guanglu Ge

Abstract: ITO thin films were deposited on glass substrates by d.c. magnetron sputtering with varied oxygen flow rates. It was found that the optical absorption decreases and optical absorption edge has blue shifts with the increasing oxygen flow rate. Oxygen vacancy concentration was characterized and analyzed by XPS. It is shown that the oxygen vacancy concentration increases with oxygen flow rates, which… ▽ More ITO thin films were deposited on glass substrates by d.c. magnetron sputtering with varied oxygen flow rates. It was found that the optical absorption decreases and optical absorption edge has blue shifts with the increasing oxygen flow rate. Oxygen vacancy concentration was characterized and analyzed by XPS. It is shown that the oxygen vacancy concentration increases with oxygen flow rates, which is a different observation from the current understanding. The energy band structures associated with different vacancy concentrations of ITO were calculated using the first-principle based on density functional theory. The calculation results show that the increase of oxygen vacancies induces the increase of bands below Fermi level as well as the presence of a second band gap, which accounts for effects of the oxygen vacancies on the blue shifts. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Journal ref: Solar Energy Materials & Solar Cells 120 (2014) 157-162

First principles calculation of lithium-phosphorus co-doped diamond

Authors: Q. Y. Shao, G. W. Wang, J. Zhang, K. G. Zhu

Abstract: We calculate the density of states (DOS) and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li) and phosphorus (P) by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-do** on the diamond conductivities. The results show that the Li-P at… ▽ More We calculate the density of states (DOS) and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li) and phosphorus (P) by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-do** on the diamond conductivities. The results show that the Li-P atoms can promote the split of the diamond energy band near the Fermi level, and improve the electron conductivities of the Li-P co-doped diamond thin films, or even make the Li-P co-doped diamond from semiconductor to conductor. The effect of Li-P co-do** concentration on the orbital charge distributions, bond lengths and bond populations is analyzed. The Li atom may promote the split of the energy band near the Fermi level as well as may favorably regulate the diamond lattice distortion and expansion caused by the P atom. △ Less

Submitted 22 March, 2013; originally announced March 2013.

Comments: 14 pages, 11 figures

Journal ref: Condens. Matter Phys., 2013, vol. 16, No. 1, 13702:1-14

Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell

Authors: AQing Chen, QingYi Shao

Abstract: The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in t… ▽ More The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell. △ Less

Submitted 14 August, 2011; originally announced August 2011.

Comments: 8 pages 6figures, 1 tables

Journal ref: Sci China Phys Mech Astron August (2011) Vol. 54 No. 8. 1466-1470

Special electronic structures and quantum conduction of B/P co-do** carbon nanotubes under electric field using the first principle

Authors: AQing Chen, QingYi Shao, Zhen Li

Abstract: Boron (B)/phosphorus (P) doped single wall carbon nanotubes (B-PSWNTs) are studied by using the First- Principle method based on density function theory (DFT). Mayer bond order, band structure, electrons density and density of states are calculated. It concludes that the B-PSWNTs have special band structure which is quite different from BN nanotubes, and that metallic carbon nanotubes will be conv… ▽ More Boron (B)/phosphorus (P) doped single wall carbon nanotubes (B-PSWNTs) are studied by using the First- Principle method based on density function theory (DFT). Mayer bond order, band structure, electrons density and density of states are calculated. It concludes that the B-PSWNTs have special band structure which is quite different from BN nanotubes, and that metallic carbon nanotubes will be converted to semiconductor due to boron/phosphorus co-do** which breaks the symmetrical structure. The bonding forms in B-PSWNTs are investigated in detail. Besides, Mulliken charge population and the quantum conductance are also calculated to study the quantum transport characteristics of B-PSWNT hetero-junction. It is found that the position of p-n junction in this hetero-junction will be changed as the applied electric field increase and it performs the characteristics of diode. △ Less

Submitted 11 August, 2011; originally announced August 2011.

Comments: 11 pages, 6 fiugres, 2 tables

Journal ref: J Nanopart Res (2011) 13:2275--2283

Effects of phosphorus-do** upon the electronic structures of single wall carbon nanotubes

Authors: AQing Chen, QingYi Shao, ZhiCheng Lin

Abstract: The phosphorus-doped single wall carbon nanotube (PSWCNT) is studied by using First-Principle methods based on Density Function Theory (DFT). The formation energy, total energy, band structure, geometry structure and density of states are calculated. It is found that the formation energy of the P-doped single carbon nanotubes increases with diameters; the total energy of carbon nanotubes with the… ▽ More The phosphorus-doped single wall carbon nanotube (PSWCNT) is studied by using First-Principle methods based on Density Function Theory (DFT). The formation energy, total energy, band structure, geometry structure and density of states are calculated. It is found that the formation energy of the P-doped single carbon nanotubes increases with diameters; the total energy of carbon nanotubes with the same diameter decreases as the do** rate increases. The effects of impurity position on the im-purity level are discussed. It illustrates that the position of the impurity level may depend on the C-P-C bond angle. According to the above results, it is feasible to substitute a carbon atom with a phosphorus atom in SWCNT. It is also found that P-doped carbon nanotubes are N type semiconductor. △ Less

Submitted 9 August, 2011; originally announced August 2011.

Comments: 9 pages, 6 figures, 2 tables

Journal ref: Sci China Ser G-Phys Mech Astron, 2009 52(8) 1139-1145

Low-noise top-gate graphene transistors

Authors: G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur, A. A. Balandin

Abstract: We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge param… ▽ More We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors. △ Less

Submitted 23 August, 2009; originally announced August 2009.

Comments: 9 pages, 4 figures

Journal ref: Applied Physics Letters, 95, 033103 (2009)

Flicker Noise in Bilayer Graphene Transistors

Authors: Q. Shao, G. Liu, D. Teweldebrhan, A. A. Balandin, S. Roumyantesv, M. Shur, D. Yan

Abstract: We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the fabricated transistors was around 10 V. The noise spectra at frequencies above 10 - 100 Hz were of the 1/f - type with the spectral density on the or… ▽ More We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the fabricated transistors was around 10 V. The noise spectra at frequencies above 10 - 100 Hz were of the 1/f - type with the spectral density on the order of 10E-23 - 10E-22 A2/Hz at the frequency of 1 kHz. The deviation from the 1/f spectrum at the frequencies below 10 -100 Hz indicates that the noise is of the carrier - number fluctuation origin due to the carrier trap** by defects. The Hooge parameter of 10E-4 was extracted for this type of devices. The gate dependence of the noise spectral density suggests that the noise is dominated by the contributions from the ungated part of the device channel and by the contacts. The obtained results are important for graphene electronic applications. △ Less

Submitted 19 December, 2008; originally announced December 2008.

Journal ref: IEEE Electron Device Letters, 30 (3), 288 (2009)

Resistance Quenching in Graphene Interconnects

Authors: Q. Shao, G. Liu, D. Teweldebrhan, A. A. Balandin

Abstract: We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respect… ▽ More We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and acoustic phonon scattering. The obtained results are important for the proposed applications of graphene as interconnects in integrated circuits. △ Less

Submitted 2 May, 2008; originally announced May 2008.

Journal ref: Applied Physics Letters, 92, 202108 (2008)