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Topological phase in the extended Haldane-Hubbard model with sublattice-dependent repulsion
Authors:
Bao-Qing Wang,
Can Shao,
Takami Tohyama,
Hong-Gang Luo,
Hantao Lu
Abstract:
We study the ground-state phase diagram of the half-filled extended Haldane-Hubbard model on the honeycomb lattice with sublattice-dependent on-site repulsion ($U_{\text{A/B}}$) using the exact diagonalization (ED) and mean-field (MF) methods. The resulting phase diagram shows that there is a topologically nontrivial phase with the Chern number $C=1$, emerging via the development of the imbalance…
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We study the ground-state phase diagram of the half-filled extended Haldane-Hubbard model on the honeycomb lattice with sublattice-dependent on-site repulsion ($U_{\text{A/B}}$) using the exact diagonalization (ED) and mean-field (MF) methods. The resulting phase diagram shows that there is a topologically nontrivial phase with the Chern number $C=1$, emerging via the development of the imbalance between $U_{\text{A}}$ and $U_{\text{B}}$. In this phase, the antiferromagnetic correlations are observed in the ED calculation, in line with the finite antiferromagnetic order obtained by the MF method. The spontaneous symmetry breaking of SU(2) spin rotation in the phase is also identified in the MF level. Distinct from previous studies in which the exotic $C=1$ phase relies on the interplay between sublattice-dependent potentials and electronic interactions, our paper presents an alternative way by solely tuning the on-site interactions.
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Submitted 3 July, 2024;
originally announced July 2024.
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Diverse Responses in Lattice Thermal Conductivity of $n$-type/$p$-type Semiconductors Driven by Asymmetric Electron-Phonon Interactions
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Han Xie,
Meng An,
Chuang Zhang,
Xiongfei Zhu,
Chen Huang,
Yucheng Xiong,
Xiangjun Liu
Abstract:
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-…
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Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-level first-principles calculations. It is found that EPI has a larger effect on the lattice thermal conductivity of $p$-type do** compared to $n$-type do** in the same semiconductor at high charge carrier concentrations. The stronger EPI in $p$-type do** is attributed to the relatively higher electron density of states caused by the relatively larger $p$-orbital component. Furthermore, EPI has a stronger influence on the lattice thermal conductivity of $n$-type indirect bandgap semiconductors than $n$-type direct bandgap semiconductors. This is attributed to the relatively lower electron density of states in direct bandgap semiconductors stemming from the $s$-orbital component. This work reveals that there exist diverse responses in lattice thermal conductivity of $n$-type/$p$-type semiconductors, which can be attributed to asymmetric EPIs.
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Submitted 17 June, 2024;
originally announced June 2024.
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Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Meng An,
Xiongfei Zhu,
Chuang Zhang,
Xiangchuan Chen,
Yucheng Xiong,
Thomas Frauenheim,
Xiangjun Liu
Abstract:
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressi…
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4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed, and the out-of-plane hole mobility of 4H-SiC can be enhanced by 200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.
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Submitted 20 June, 2024; v1 submitted 4 June, 2024;
originally announced June 2024.
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Photoinduced phase switching from Mott insulator to metallic state in the quarter-filled Peierls-Hubbard model
Authors:
Can Shao,
Takami Tohyama,
Hantao Lu
Abstract:
Utilizing the exact diagonalization method, we investigate the one-dimensional Peierls-Hubbard model at quarter filling, where it manifests as an antiferromagnetic Mott insulator in units of dimers. By increasing the on-site Coulomb repulsion U, we observe a significant suppression of the Drude peak, based on a nonequilibrium linear response theory capable of capturing the zero-frequency (Drude) w…
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Utilizing the exact diagonalization method, we investigate the one-dimensional Peierls-Hubbard model at quarter filling, where it manifests as an antiferromagnetic Mott insulator in units of dimers. By increasing the on-site Coulomb repulsion U, we observe a significant suppression of the Drude peak, based on a nonequilibrium linear response theory capable of capturing the zero-frequency (Drude) weight of the optical conductivity under periodic boundary conditions. However, after the ultrafast photoirradiation of this model with large U, we detect a distinct enhancement of the Drude peak, signifying the onset of a photoinduced insulator-metal transition. Comparing these dynamics with the half-filled Hubbard model and a noninteracting spinless half-filled Su-Schrieffer-Heeger model (corresponding to the quarter-filled Peierls-Hubbard model with infinite U), we propose a novel mechanism for the photoinduced metallic state: the empty-occupied and double-occupied dimers serve as the photoinduced charge carriers, akin to the holons and doublons in Hubbard model.
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Submitted 3 June, 2024;
originally announced June 2024.
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Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering
Authors:
Jianshi Sun,
Xiangjun Liu,
Yucheng Xiong,
Yuhang Yao,
Xiaolong Yang,
Cheng Shao,
Shouhang Li
Abstract:
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extremely strong effects on the lattice thermal conductivity of 2D-GaN, which exhibits noticeable discrepancies with lattice thermal conductivity calculate…
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Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extremely strong effects on the lattice thermal conductivity of 2D-GaN, which exhibits noticeable discrepancies with lattice thermal conductivity calculated from molecular dynamics. In this work, it is found that the fourth-order interatomic force constants (4th-IFCs) of 2D-GaN are quite sensitive to atomic displacement in the finite different method. The effects of the four-phonon scattering can be severely overestimated with non-convergent 4th-IFCs. The lattice thermal conductivity from three-phonon scattering is reduced by 65.6% due to four-phonon scattering. The reflection symmetry allows significantly more four-phonon processes than three-phonon processes. It was previously thought the electron-phonon interactions have significant effects on the lattice thermal conductivity of two-dimensional materials. However, the effects of phonon-electron interactions on the lattice thermal conductivity of both n-type and p-type 2D-GaN at high charge carrier concentrations can be neglected due to the few phonon-electron scattering channels and the relatively strong four-phonon scattering.
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Submitted 10 March, 2024; v1 submitted 6 March, 2024;
originally announced March 2024.
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Phase diagram of the interacting Haldane model with spin-dependent sublattice potentials
Authors:
Can Shao,
Hong-Gang Luo
Abstract:
Using the exact-diagonalization (ED) and mean-field (MF) approaches, we investigate the ground-state phase diagram of the interacting Haldane model on the honeycomb lattice, incorporating spin-dependent sublattice potentials $Δ_{σ,α}$. Here $α=\text{A}$,$\text{B}$ and $σ=\uparrow$,$\downarrow$ denote the sublattice and spin components, respectively. Setting $Δ_{σ,\text{A}}=+Δ$ ($-Δ$) and…
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Using the exact-diagonalization (ED) and mean-field (MF) approaches, we investigate the ground-state phase diagram of the interacting Haldane model on the honeycomb lattice, incorporating spin-dependent sublattice potentials $Δ_{σ,α}$. Here $α=\text{A}$,$\text{B}$ and $σ=\uparrow$,$\downarrow$ denote the sublattice and spin components, respectively. Setting $Δ_{σ,\text{A}}=+Δ$ ($-Δ$) and $Δ_{σ,\text{B}}$$=-Δ$ ($+Δ$) for $σ=\uparrow$ ($\downarrow$) results in the system favoring a spin ordered state. Conversely, introducing the nearest-neighbor Coulomb interaction can induce charge ordering in the system. Due to the competition between these factors, we observe that in both ED and MF approaches, an exotic state with Chern number $C=1$ survives amidst two locally ordered phases and a topologically ordered phase with $C=2$. In the ED method, various properties, such as the fidelity metric, the excitation gap and the structure factors, are employed to identify critical points. In the MF method, using a sufficiently large lattice size, we define the local order parameters and band gaps to characterize the phase transitions. The interacting Haldane model and the spin-dependent lattice potential may be experimentally realized in an ultracold atom gas, providing a potential means to detect this intriguing state.
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Submitted 3 June, 2024; v1 submitted 31 January, 2024;
originally announced January 2024.
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Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Xiangchuan Chen,
Qianqian Liu,
Yucheng Xiong,
Meng An,
Xiangjun Liu
Abstract:
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy do**. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich inter…
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Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy do**. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich interaction. Surprisingly, our investigation reveals weak effects of electron-phonon interactions on the lattice thermal conductivity of n-type GaN at ultra-high electron concentrations and the impact of the Fröhlich interaction can be ignored. The small phonon-electron scattering rate is attributed to the limited scattering channels, quantified by the Fermi surface nesting function. In contrast, there is a significant reduction in the lattice thermal conductivity of p-type GaN at high hole concentrations due to the relatively larger Fermi surface nesting function. Meanwhile, as p-type GaN has relatively smaller electron-phonon matrix elements, the reduction in lattice thermal conductivity is still weaker than that observed in p-type silicon. Our work provides a deep understanding of thermal transport in doped GaN and the conclusions can be further extended to other wide-bandgap semiconductors, including $β$-Ga2O3, AlN, and ZnO.
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Submitted 5 May, 2024; v1 submitted 4 January, 2024;
originally announced January 2024.
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Strain Engineering for High-Performance Phase Change Memristors
Authors:
Wenhui Hou,
Ahmad Azizimanesh,
Aditya Dey,
Yufeng Yang,
Wuxiucheng Wang,
Chen Shao,
Hui Wu,
Hesam Askari,
Sobhit Singh,
Stephen M. Wu
Abstract:
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance bipolar phase change memristor from strain engineered multilayer 1T'-MoTe$_{2}$ that now surpasses the performance metrics (on/off ratio, switching voltage, switc…
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A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance bipolar phase change memristor from strain engineered multilayer 1T'-MoTe$_{2}$ that now surpasses the performance metrics (on/off ratio, switching voltage, switching speed) of all 2D memristive devices, achieved without forming steps. Using process-induced strain engineering, we directly pattern stressed metallic contacts to induce a semimetallic to semiconducting phase transition in MoTe2 forming a self-aligned vertical transport memristor with semiconducting MoTe$_{2}$ as the active region. These devices utilize strain to bring them closer to the phase transition boundary and achieve ultra-low ~90 mV switching voltage, ultra-high ~10$^8$ on/off ratio, 5 ns switching, and retention of over 10$^5$ s. Engineered tunability of the device switching voltage and on/off ratio is also achieved by varying the single process parameter of contact metal film force (film stress $\times$ film thickness).
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Submitted 25 August, 2023;
originally announced August 2023.
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Time-resolved single-particle spectrum of the one-dimensional extended Hubbard model after interaction quenches
Authors:
Yong-Guang Su,
Ruifeng Lu,
Hantao Lu,
Can Shao
Abstract:
We investigate the non-equilibrium dynamics of the one-dimensional extended Hubbard model after interaction quenches. In strong-coupling regime with large on-site interaction, the ground states of this model with small and large nearest-neighbor interactions are in spin-density-wave and charge-density-wave phases, respectively. Combining twisted boundary conditions with the time-dependent Lanczos…
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We investigate the non-equilibrium dynamics of the one-dimensional extended Hubbard model after interaction quenches. In strong-coupling regime with large on-site interaction, the ground states of this model with small and large nearest-neighbor interactions are in spin-density-wave and charge-density-wave phases, respectively. Combining twisted boundary conditions with the time-dependent Lanczos method, we obtain snapshots of the time-dependent single-particle spectrum after quenches. We find that for quench within the same phase, the single-particle spectrum becomes close to that of the quenched Hamiltonian immediately after the quench. While for quench across the critical point, the afterward evolution process depends mainly on the distribution of the initial state among the eigenstates of the quenched Hamiltonian. Our finding may serve as a way to detect the phase transition in ultracold atom systems with interactions.
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Submitted 22 March, 2023;
originally announced March 2023.
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Electrostatic effect due to patch potentials between closely spaced surfaces
Authors:
Jun Ke,
Wen-Can Dong,
Sheng-Hua Huang,
Yu-Jie Tan,
Wen-Hai Tan,
Shan-Qing Yang,
Cheng-Gang Shao,
Jie Luo
Abstract:
The spatial variation and temporal variation in surface potential are important error sources in various precision experiments and deserved to be considered carefully. In the former case, the theoretical analysis shows that this effect depends on the surface potentials through their spatial autocorrelation functions. By making some modification to the quasi-local correlation model, we obtain a rig…
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The spatial variation and temporal variation in surface potential are important error sources in various precision experiments and deserved to be considered carefully. In the former case, the theoretical analysis shows that this effect depends on the surface potentials through their spatial autocorrelation functions. By making some modification to the quasi-local correlation model, we obtain a rigorous formula for the patch force, where the magnitude is proportional to ${\frac{1}{{{a}^{2}}}{{(\frac{a}{w})}^{β(a/w)+2}}}$ with ${a}$ the distance between two parallel plates, ${w}$ the mean patch size, and $β$ the scaling coefficient from ${-2}$ to ${-4}$. A torsion balance experiment is then conducted, and obtain a 0.4 mm effective patch size and 20 mV potential variance. In the latter case, we apply an adatom diffusion model to describe this mechanism and predicts a ${f^{-3/4}}$ frequency dependence above 0.01 ${\rm mHz}$. This prediction meets well with a typical experimental results. Finally, we apply these models to analyze the patch effect for two typical experiments. Our analysis will help to investigate the properties of surface potentials.
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Submitted 22 February, 2023;
originally announced February 2023.
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Graph neural networks for materials science and chemistry
Authors:
Patrick Reiser,
Marlen Neubert,
André Eberhard,
Luca Torresi,
Chen Zhou,
Chen Shao,
Houssam Metni,
Clint van Hoesel,
Henrik Schopmans,
Timo Sommer,
Pascal Friederich
Abstract:
Machine learning plays an increasingly important role in many areas of chemistry and materials science, e.g. to predict materials properties, to accelerate simulations, to design new materials, and to predict synthesis routes of new materials. Graph neural networks (GNNs) are one of the fastest growing classes of machine learning models. They are of particular relevance for chemistry and materials…
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Machine learning plays an increasingly important role in many areas of chemistry and materials science, e.g. to predict materials properties, to accelerate simulations, to design new materials, and to predict synthesis routes of new materials. Graph neural networks (GNNs) are one of the fastest growing classes of machine learning models. They are of particular relevance for chemistry and materials science, as they directly work on a graph or structural representation of molecules and materials and therefore have full access to all relevant information required to characterize materials. In this review article, we provide an overview of the basic principles of GNNs, widely used datasets, and state-of-the-art architectures, followed by a discussion of a wide range of recent applications of GNNs in chemistry and materials science, and concluding with a road-map for the further development and application of GNNs.
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Submitted 5 August, 2022;
originally announced August 2022.
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Phase transitions in the Haldane-Hubbard model with ionic potentials
Authors:
Hao Yuan,
Yangbin Guo,
Ruifeng Lu,
Hantao Lu,
Can Shao
Abstract:
By employing the exact-diagonalization method, we revisit the ground-state phase diagram of the Haldane-Hubbard model on the honeycomb lattice with staggered sublattice potentials. The phase diagram includes the band insulator, Mott insulator, and two Chern insulator phases with Chern numbers C=2 and C=1, respectively. The character of transitions between different phases is studied by analyzing t…
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By employing the exact-diagonalization method, we revisit the ground-state phase diagram of the Haldane-Hubbard model on the honeycomb lattice with staggered sublattice potentials. The phase diagram includes the band insulator, Mott insulator, and two Chern insulator phases with Chern numbers C=2 and C=1, respectively. The character of transitions between different phases is studied by analyzing the lower-lying energy levels, excitation gaps, structure factors, and fidelity metric. We find that the C=1 phase can be continuously deformed into the C=2 phase without a gap closure in the periodic boundary condition, while a further analysis on the Berry curvatures indicates that the excitation gap closes at the phase boundary in a twisted boundary condition, accompanied by the discontinuities of structure factors. All the other phase transitions are found to be first-order ones as expected.
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Submitted 23 February, 2023; v1 submitted 30 May, 2022;
originally announced May 2022.
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Effect of anharmonicity on the thermal conductivity of amorphous silica
Authors:
Xueyan Zhu,
Cheng Shao
Abstract:
Proper consideration of anharmonicity is important for the calculation of the thermal conductivity. However, how the anharmonicity influences the thermal conduction in amorphous materials is still an open question. In this work, we uncover the role of anharmonicity on the thermal conductivity of amorphous silica (a-SiO2) by comparing the thermal conductivity predicted from the harmonic theory and…
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Proper consideration of anharmonicity is important for the calculation of the thermal conductivity. However, how the anharmonicity influences the thermal conduction in amorphous materials is still an open question. In this work, we uncover the role of anharmonicity on the thermal conductivity of amorphous silica (a-SiO2) by comparing the thermal conductivity predicted from the harmonic theory and the anharmonic theory. Moreover, we explore the effect of anharmonicity-induced frequency shift on the prediction of the thermal conductivity. It is found that the thermal conductivity calculated by the recently developed anharmonic theory (quasi-harmonic Green-Kubo approximation, QHGK) is higher than that by the harmonic theory developed by Allen and Feldman. The use of anharmonic vibrational frequencies also leads to a higher thermal conductivity compared with that calculated using harmonic vibrational frequencies. The anharmonicity induced frequency shifts is a mechanism for the positive temperature dependence of the thermal conductivity of a-SiO2 at higher temperatures. Further investigation on mode diffusivity suggests that although anharmonicity has larger influence on locons than diffusons, the increase of the thermal conductivity due to the anharmonicity is mainly contributed by the anharmonicity induced increase of the diffusivity of diffusons. Finally, it is found that the cross-correlations between diffusons and diffusons contribute most to the thermal conductivity of a-SiO2, and the locons contribute to the thermal conductivity mainly through collaboration with diffusons. These results offer new insights into the nature of the thermal conduction in a-SiO2.
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Submitted 18 April, 2022;
originally announced April 2022.
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Simple exponential acceleration of the power iteration algorithm
Authors:
Congzhou M Sha,
Nikolay V Dokholyan
Abstract:
Many real-world problems rely on finding eigenvalues and eigenvectors of a matrix. The power iteration algorithm is a simple method for determining the largest eigenvalue and associated eigenvector of a general matrix. This algorithm relies on the idea that repeated multiplication of a randomly chosen vector x by the matrix A gradually amplifies the component of the vector along the eigenvector of…
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Many real-world problems rely on finding eigenvalues and eigenvectors of a matrix. The power iteration algorithm is a simple method for determining the largest eigenvalue and associated eigenvector of a general matrix. This algorithm relies on the idea that repeated multiplication of a randomly chosen vector x by the matrix A gradually amplifies the component of the vector along the eigenvector of the largest eigenvalue of A while suppressing all other components. Unfortunately, the power iteration algorithm may demonstrate slow convergence. In this report, we demonstrate an exponential speed up in convergence of the power iteration algorithm with only a polynomial increase in computation by taking advantage of the commutativity of matrix multiplication.
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Submitted 22 September, 2021;
originally announced September 2021.
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High-harmonic generation approaching the quantum critical point of strongly correlated systems
Authors:
Can Shao,
Hantao Lu,
Xiao Zhang,
Chao Yu,
Takami Tohyama,
Ruifeng Lu
Abstract:
By employing the exact diagonalization method, we investigate the high-harmonic generation (HHG) of the correlated systems under the strong laser irradiation. For the extended Hubbard model on a periodic chain, HHG close to the quantum critical point (QCP) is more significant compared to two neighboring gapped phases (i.e., charge-density-wave and spin-density wave states), especially in low-frequ…
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By employing the exact diagonalization method, we investigate the high-harmonic generation (HHG) of the correlated systems under the strong laser irradiation. For the extended Hubbard model on a periodic chain, HHG close to the quantum critical point (QCP) is more significant compared to two neighboring gapped phases (i.e., charge-density-wave and spin-density wave states), especially in low-frequencies. We confirm that the systems in the vicinity of the QCP are supersensitive to the external field and more optical-transition channels via excited states are responsible for HHG. This feature holds the potential of obtaining high-efficiency harmonics by making use of materials approaching to QCP. Based on two-dimensional Haldane model, we further propose that the even- or odd-order components of generated harmonics can be promisingly regarded as spectral signals to distinguish the topologically ordered phases from locally ordered ones. Our findings in this work pave the way to achieve ultrafast light source from HHG in strongly correlated materials and to study quantum phase transition by nonlinear optics in strong laser fields.
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Submitted 4 March, 2022; v1 submitted 14 July, 2021;
originally announced July 2021.
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Photoinduced anomalous Hall effect in the interacting Haldane model: targeting topological states with pump pulses
Authors:
Can Shao,
P. D. Sacramento,
Rubem Mondaini
Abstract:
We investigate the nonequilibrium dynamics of the spinless Haldane model with nearest-neighbor interactions on the honeycomb lattice by employing an unbiased numerical method. In this system, a first-order transition from the Chern insulator (CI) at weak coupling to the charge-density-wave (CDW) phase at strong coupling can be characterized by a level crossing of the lowest energy levels. Here we…
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We investigate the nonequilibrium dynamics of the spinless Haldane model with nearest-neighbor interactions on the honeycomb lattice by employing an unbiased numerical method. In this system, a first-order transition from the Chern insulator (CI) at weak coupling to the charge-density-wave (CDW) phase at strong coupling can be characterized by a level crossing of the lowest energy levels. Here we show that adiabatically following the eigenstates across this level crossing, their Chern numbers are preserved, leading to the identification of a topologically-nontrivial low-energy excited state in the CDW regime. By promoting a resonant energy excitation via an ultrafast circularly polarized pump pulse, we find that the system acquires a non-vanishing Hall response as a result of the large overlap enhancement between the time-dependent wave-function and the topologically non-trivial excited state. This is suggestive of a photoinduced topological phase transition via unitary dynamics, despite a proper definition of the Chern number remaining elusive for an out-of-equilibrium interacting system. We contrast these results with more common quench protocols, where such features are largely absent in the dynamics even if the post-quench Hamiltonian displays a topologically nontrivial ground state.
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Submitted 3 September, 2021; v1 submitted 4 May, 2021;
originally announced May 2021.
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Dynamic electron correlations with charge order wavelength along all directions in the copper oxide plane
Authors:
F. Boschini,
M. Minola,
R. Sutarto,
E. Schierle,
M. Bluschke,
S. Das,
Y. Yang,
M. Michiardi,
Y. C. Shao,
X. Feng,
S. Ono,
R. D. Zhong,
J. Schneeloch,
G. D. Guo,
E. Weschke,
F. He,
Y. D. Chuang,
B. Keimer,
A. Damascelli,
A. Frano,
E. H. da Silva Neto
Abstract:
In strongly correlated systems the strength of Coulomb interactions between electrons, relative to their kinetic energy, plays a central role in determining their emergent quantum mechanical phases. We perform resonant x-ray scattering on Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, a prototypical cuprate superconductor, to probe electronic correlations within the CuO$_2$ plane. We discover a dynamic quasi-circ…
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In strongly correlated systems the strength of Coulomb interactions between electrons, relative to their kinetic energy, plays a central role in determining their emergent quantum mechanical phases. We perform resonant x-ray scattering on Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, a prototypical cuprate superconductor, to probe electronic correlations within the CuO$_2$ plane. We discover a dynamic quasi-circular pattern in the $x$-$y$ scattering plane with a radius that matches the wave vector magnitude of the well-known static charge order. Along with do**- and temperature-dependent measurements, our experiments reveal a picture of charge order competing with superconductivity where short-range domains along $x$ and $y$ can dynamically rotate into any other in-plane direction. This quasi-circular spectrum, a hallmark of Brazovskii-type fluctuations, has immediate consequences to our understanding of rotational and translational symmetry breaking in the cuprates. We discuss how the combination of short- and long-range Coulomb interactions results in an effective non-monotonic potential that may determine the quasi-circular pattern.
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Submitted 29 January, 2021;
originally announced February 2021.
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Scalable monolayer-functionalized nanointerface for thermal conductivity enhancement in copper/diamond composite
Authors:
Bin Xu,
Shih-Wei Hung,
Shiqian Hu,
Cheng Shao,
Rulei Guo,
Junho Choi,
Takashi Kodama,
Fu-Rong Chen,
Junichiro Shiomi
Abstract:
Aiming at develo** high thermal conductivity copper/diamond composite, an unconventional approach applying self-assembled monolayer (SAM) prior to the high-temperature sintering of copper/diamond composite was utilized to enhance the thermal boundary conductance (TBC) between copper and diamond. The enhancement was first systematically confirmed on a model interface system by detailed SAM morpho…
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Aiming at develo** high thermal conductivity copper/diamond composite, an unconventional approach applying self-assembled monolayer (SAM) prior to the high-temperature sintering of copper/diamond composite was utilized to enhance the thermal boundary conductance (TBC) between copper and diamond. The enhancement was first systematically confirmed on a model interface system by detailed SAM morphology characterization and TBC measurements. TBC significantly depends on the SAM coverage and ordering, and the formation of high-quality SAM promoted the TBC to 73 MW/m^2-K from 27 MW/m^2-K, the value without SAM. With the help of molecular dynamics simulations, the TBC enhancement was identified to be determined by the number of SAM bridges and the overlap of vibrational density of states. The diamond particles of 210 {\micro\metre} in size were simultaneously functionalized by SAM with the condition giving the highest TBC in the model system and sintered together with the copper to fabricate isotropic copper/diamond composite of 50% volume fraction. The measured thermal conductivity marked 711 W/m-K at room temperature, the highest value among the ones with similar diamond-particles volume fraction and size. This work demonstrates a novel strategy to enhance the thermal conductivity of composite materials by SAM functionalization.
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Submitted 5 January, 2021;
originally announced January 2021.
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Interplay of local order and topology in the extended Haldane-Hubbard model
Authors:
Can Shao,
Eduardo V. Castro,
Shijie Hu,
Rubem Mondaini
Abstract:
We investigate the ground-state phase diagram of the spinful extended Haldane-Hubbard model on the honeycomb lattice using an exact-diagonalization, mean-field variational approach, and further complement it with the infinite density matrix renormalization group, applied to an infinite honeycomb cylinder. This model, governed by both on-site and nearest-neighbor interactions, can result in two typ…
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We investigate the ground-state phase diagram of the spinful extended Haldane-Hubbard model on the honeycomb lattice using an exact-diagonalization, mean-field variational approach, and further complement it with the infinite density matrix renormalization group, applied to an infinite honeycomb cylinder. This model, governed by both on-site and nearest-neighbor interactions, can result in two types of insulators with finite local order parameters, either with spin or charge ordering. Moreover, a third one, a topologically nontrivial insulator with nonlocal order, is also manifest. We test expectations of previous analyses in spinless versions asserting that once a local order parameter is formed, the topological characteristics of the ground state, associated with a finite Chern number, are no longer present, resulting in a topologically trivial wave function. Our study confirms this overall picture, and highlights how finite-size effects may result in misleading conclusions on the coexistence of finite local order parameters and nontrivial topology in this model.
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Submitted 20 January, 2021; v1 submitted 1 September, 2020;
originally announced September 2020.
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Analysis of time-resolved single-particle spectrum on the one-dimensional extended Hubbard model
Authors:
Can Shao,
Takami Tohyama,
Hong-Gang Luo,
Hantao Lu
Abstract:
We investigate the short-time evolution of the half filled one-dimensional extended Hubbard model in the strong-coupling regime, driven by a transient laser pump. Combining twisted boundary conditions with the time-dependent Lanczos technique, we obtain snapshots of the single-particle spectral function with high momentum resolution. The analysis of the oscillations of the spectral function shows…
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We investigate the short-time evolution of the half filled one-dimensional extended Hubbard model in the strong-coupling regime, driven by a transient laser pump. Combining twisted boundary conditions with the time-dependent Lanczos technique, we obtain snapshots of the single-particle spectral function with high momentum resolution. The analysis of the oscillations of the spectral function shows that its characteristic frequencies are consistent with the magnitudes of the optical gap. Furthermore, we examine the time-evolving spectral structure in the charge-density-wave phase in detail and find that one of the bands in the single-particle spectrum originates from the photoinduced bond-order background.
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Submitted 29 January, 2020; v1 submitted 18 June, 2019;
originally announced June 2019.
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Photoinduced enhancement of bond-order in the one-dimensional extended Hubbard model
Authors:
Can Shao,
Hantao Lu,
Hong-Gang Luo,
Rubem Mondaini
Abstract:
We investigate the real-time dynamics of the half-filled one-dimensional extended Hubbard model in the strong-coupling regime, when driven by a transient laser pulse. Starting from a wide regime displaying a charge-density wave in equilibrium, a robust photoinduced in-gap state appears in the optical conductivity, depending on the parameters of the pulse. Here, by tuning its conditions, we maximiz…
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We investigate the real-time dynamics of the half-filled one-dimensional extended Hubbard model in the strong-coupling regime, when driven by a transient laser pulse. Starting from a wide regime displaying a charge-density wave in equilibrium, a robust photoinduced in-gap state appears in the optical conductivity, depending on the parameters of the pulse. Here, by tuning its conditions, we maximize the overlap of the time-evolving wavefunction with excited states displaying the elusive bond-ordered wave of this model. Finally, we make a clear connection between the emergence of this order and the formation of the aforementioned in-gap state, suggesting the potential observation of purely electronic (i.e., not associated with a Peierls instability) bond-ordered waves in experiments involving molecular crystals.
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Submitted 26 July, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
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Photoinduced charge carrier dynamics in Hubbard two-leg ladders and chains
Authors:
Can Shao,
Takami Tohyama,
Hong-Gang Luo,
Hantao Lu
Abstract:
The charge carrier dynamics of doped electronic correlated systems on ladders and chains, subject to ultrafast photoirradiation, is investigated using the time-dependent Lanczos method. The time-resolved optical conductivity and the temporal profiles of other relevant quantities, including the doublon number, the kinetic energy, and the interaction energy, are calculated. Two competitive factors t…
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The charge carrier dynamics of doped electronic correlated systems on ladders and chains, subject to ultrafast photoirradiation, is investigated using the time-dependent Lanczos method. The time-resolved optical conductivity and the temporal profiles of other relevant quantities, including the doublon number, the kinetic energy, and the interaction energy, are calculated. Two competitive factors that can influence the transient charge carrier dynamics are identified as the thermal effect and the charge effect. We demonstrate that the analysis of their interplay can provide an intuitive way to understand the numerical results and the recent optical pump-probe experiment on a two-leg ladder cuprate.
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Submitted 10 January, 2019; v1 submitted 27 November, 2018;
originally announced November 2018.
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Giant resonant nonlinear dam** in nanoscale ferromagnets
Authors:
I. Barsukov,
H. K. Lee,
A. A. Jara,
Y. -J. Chen,
A. M. Gonçalves,
C. Sha,
J. A. Katine,
R. E. Arias,
B. A. Ivanov,
I. N. Krivorotov
Abstract:
Magnetic dam** is a key metric for emerging technologies based on magnetic nanoparticles, such as spin torque memory and high-resolution biomagnetic imaging. Despite its importance, understanding of magnetic dissipation in nanoscale ferromagnets remains elusive, and the dam** is often treated as a phenomenological constant. Here we report the discovery of a giant frequency-dependent nonlinear…
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Magnetic dam** is a key metric for emerging technologies based on magnetic nanoparticles, such as spin torque memory and high-resolution biomagnetic imaging. Despite its importance, understanding of magnetic dissipation in nanoscale ferromagnets remains elusive, and the dam** is often treated as a phenomenological constant. Here we report the discovery of a giant frequency-dependent nonlinear dam** that strongly alters the response of a nanoscale ferromagnet to spin torque and microwave magnetic field. This novel dam** mechanism originates from three-magnon scattering that is strongly enhanced by geometric confinement of magnons in the nanomagnet. We show that the giant nonlinear dam** can invert the effect of spin torque on a nanomagnet leading to a surprising current-induced enhancement of dam** by an antidam** torque. Our work advances understanding of magnetic dynamics in nanoscale ferromagnets and spin torque devices.
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Submitted 29 March, 2018;
originally announced March 2018.
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Probing the phonon surface interaction by wave packet simulation: effect of roughness and morphology
Authors:
Cheng Shao,
Qingyuan Rong,
Ming Hu,
Hua Bao
Abstract:
One way to reduce the lattice thermal conductivity of solids is to induce additional phonon surface scattering through nanostructures. However, how phonons interact with boundaries, especially at the atomic level, is not well understood. In this work, we performed two-dimensional atomistic wave packet simulations to investigate the phonon surface interaction. Emphasis has been given to the angular…
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One way to reduce the lattice thermal conductivity of solids is to induce additional phonon surface scattering through nanostructures. However, how phonons interact with boundaries, especially at the atomic level, is not well understood. In this work, we performed two-dimensional atomistic wave packet simulations to investigate the phonon surface interaction. Emphasis has been given to the angular-resolved phonon reflection at smooth, periodically rough, and amorphous surfaces. We found that the acoustic phonon reflection at a smooth surface is not simply specular. Mode conversion can occur after reflection, and the detailed energy distribution after reflection will dependent on surface condition and polarization of incident phonon. At periodically rough surfaces, the reflected wave packet distribution does not follow the well-known Ziman's model, but shows a nonmonotonic dependence on the depth of surface roughness. When an amorphous layer is attached to the surface, the incident wave packet will be absorbed by the amorphous region, and results in quite diffusive reflection. Our results clearly show that the commonly used specular-diffusive model is not enough to describe the phonon reflection at a periodically rough surface, while an amorphous layer can induce strong diffusive reflection. This work provides a careful analysis of phonon reflection at a surface with different morphology, which is important to a better understanding of thermal transport in various nanostructures.
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Submitted 4 May, 2017;
originally announced May 2017.
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Anisotropy in the thermal hysteresis of resistivity and charge density wave nature of single crystal SrFeO3-delta: X-ray absorption and photoemission studies
Authors:
S. H. Hsieh,
R. S. Solanki,
Y. F. Wang,
Y. C. Shao,
S. H. Lee,
C. H. Yao,
C. H. Du,
H. T. Wang,
J. W. Chiou,
Y. Y. Chin,
H. M. Tsai,
J. -L. Chen,
C. W. Pao,
C. -M. Cheng,
W. -C. Chen,
H. J. Lin,
J. F. Lee,
F. C. Chou,
W. F. Pong
Abstract:
The local electronic and atomic structures of the high-quality single crystal of SrFeO3-{delta} ({delta}~0.19) were studied using temperature-dependent x-ray absorption and valence-band photoemission spectroscopy (VB-PES) to investigate the origin of anisotropic resistivity in the ab-plane and along the c-axis close to the region of thermal hysteresis (near temperature for susceptibility maximum,…
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The local electronic and atomic structures of the high-quality single crystal of SrFeO3-{delta} ({delta}~0.19) were studied using temperature-dependent x-ray absorption and valence-band photoemission spectroscopy (VB-PES) to investigate the origin of anisotropic resistivity in the ab-plane and along the c-axis close to the region of thermal hysteresis (near temperature for susceptibility maximum, Tm~78 K). All experiments herein were conducted during warming and cooling processes. The Fe L3,2-edge X-ray linear dichrois results show that during cooling from room temperature to below the transition temperature, the unoccupied Fe 3d eg states remain in persistently out-of-plane 3d3z2-r2 orbitals. In contrast, in the warming process below the transition temperature, they change from 3d3z2-r2 to in-plane 3dx2-y2 orbitals. The nearest-neighbor (NN) Fe-O bond lengths also exhibit anisotropic behavior in the ab-plane and along the c-axis below Tm. The anisotropic NN Fe-O bond lengths and Debye-Waller factors stabilize the in-plane Fe 3dx2-y2 and out-of-plane 3d3z2-r2 orbitals during warming and cooling, respectively. Additionally, a VB-PES study further confirms that a relative band gap opens at low temperature in both the ab-plane and along the c-axis, providing the clear evidence of the charge-density-wave nature of SrFeO3-{delta} ({delta}~ 0.19) single crystal.
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Submitted 2 March, 2017;
originally announced March 2017.
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Superfluid response in heavy fermion superconductors
Authors:
Yin Zhong,
Lan Zhang,
Can Shao,
Hong-Gang Luo
Abstract:
Motivated by recent London penetration depth measurement [H. Kim et al. Phys. Rev. Lett. \textbf{114}, 027003 (2015)] and novel composite pairing scenario [O. Erten, R. Flint and P. Coleman, Phys. Rev. Lett. \textbf{114}, 027002 (2015)] on Yb-doped heavy fermion superconductor CeCoIn$_{5}$, we revisit the issue of superfluid response in microscopic heavy fermion lattice model. However, it is found…
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Motivated by recent London penetration depth measurement [H. Kim et al. Phys. Rev. Lett. \textbf{114}, 027003 (2015)] and novel composite pairing scenario [O. Erten, R. Flint and P. Coleman, Phys. Rev. Lett. \textbf{114}, 027002 (2015)] on Yb-doped heavy fermion superconductor CeCoIn$_{5}$, we revisit the issue of superfluid response in microscopic heavy fermion lattice model. However, it is found that in literature explicit expression of superfluid response function in heavy fermion superconductor is rare. In this paper, we make a contribution to this issue by investigating superfluid density response function in celebrated Kondo-Heisenberg model. To be specific, we derive corresponding formalism from an effective fermionic large-N mean-field pairing Hamiltonian, whose pairing interaction is assumed to originate from effective local antiferromagnetic exchange interaction. Interestingly, it is found that physically correct superfluid density formula can only be obtained if external electromagnetic field is directly coupled to heavy fermion quasi-particle. Such unique feature emphasizes the key role of Kondo-screening-renormalized quasi-particle for low-temperature/energy thermodynamics and transport behaviors. As an important application, the theoretical result is compared to experimental measurement in heavy fermion superconductor CeCoIn$_{5}$ and Yb-doped Ce$_{1-x}$Yb$_{x}$CoIn$_{5}$, where the agreement is fairly good and the transition of pairing symmetry in the latter one is explained as a simple do** effect. In addition, the requisite formalism for the commonly encountered nonmagnetic impurity and non-local electrodynamic effect are developed.
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Submitted 5 December, 2015; v1 submitted 13 November, 2015;
originally announced November 2015.
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Numerical method to compute optical conductivity based on pump-probe simulations
Authors:
Can Shao,
Takami Tohyama,
Hong-Gang Luo,
Hantao Lu
Abstract:
A numerical method to calculate optical conductivity based on a pump-probe setup is presented. Its validity and limits are tested and demonstrated via the concrete numerical simulations on the half-filled one-dimensional extended Hubbard model both in equilibrium and out of equilibrium. By employing either a step- or a Gaussian-like probing vector potential, it is found that in nonequilibrium, the…
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A numerical method to calculate optical conductivity based on a pump-probe setup is presented. Its validity and limits are tested and demonstrated via the concrete numerical simulations on the half-filled one-dimensional extended Hubbard model both in equilibrium and out of equilibrium. By employing either a step- or a Gaussian-like probing vector potential, it is found that in nonequilibrium, the method in the narrow-probe-pulse limit can be identified with variant types of linear response theory, which, in equilibrium, produce identical results. The observation reveals the underlying probe-pulse dependence of the optical conductivity calculations in nonequilibrium, which may have its applications in the theoretical analysis of ultrafast spectroscopy measurements.
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Submitted 25 May, 2016; v1 submitted 5 July, 2015;
originally announced July 2015.
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Photoinduced in-gap excitations in the one-dimensional extended Hubbard model
Authors:
Hantao Lu,
Can Shao,
Janez Bonča,
Dirk Manske,
Takami Tohyama
Abstract:
We investigate the time evolution of optical conductivity in the half-filled one-dimensional extended Hubbard model driven by a transient laser pulse, by using the time-dependent Lanczos method. Photoinduced in-gap excitations exhibit a qualitatively different structure in the spin-density wave (SDW) in comparison to the charge-density-wave (CDW) phase. In the SDW, the origin of a low-energy in-ga…
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We investigate the time evolution of optical conductivity in the half-filled one-dimensional extended Hubbard model driven by a transient laser pulse, by using the time-dependent Lanczos method. Photoinduced in-gap excitations exhibit a qualitatively different structure in the spin-density wave (SDW) in comparison to the charge-density-wave (CDW) phase. In the SDW, the origin of a low-energy in-gap excitation is attributed to the even-odd parity of the photoexcited states, while in the CDW an in-gap state is due to confined photogenerated carriers. The signature of the in-gap excitations can be identified as a characteristic oscillation in the time evolution of physical quantities.
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Submitted 8 June, 2015; v1 submitted 12 February, 2015;
originally announced February 2015.
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McMillan-Rowell Oscillations in a Low Spin-Orbit SNS Semiconducting Junction
Authors:
Binxin Wu,
Chenxu Shao,
Sherry Chu,
B. Schmidt,
M. Savard,
Songrui Zhao,
Zetian Mi,
T. Szkopek,
G. Gervais
Abstract:
The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigated. As a function of dc bias, superconducting quasiparticle transport resonance peaks at E=2Δwere observed, in agreement with BCS theory with 2Δ(T=0) \equiv Δ_0=275\mueV. Several additional transport resonances scaling li…
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The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigated. As a function of dc bias, superconducting quasiparticle transport resonance peaks at E=2Δwere observed, in agreement with BCS theory with 2Δ(T=0) \equiv Δ_0=275\mueV. Several additional transport resonances scaling linearly in energy were observed at high-bias above 2Δ, up to E\simeq 15Δ_0, consistent with McMillan-Rowell oscillations. The persistence of McMillan-Rowell oscillations at high-bias and under applied magnetic field were investigated.
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Submitted 22 May, 2013;
originally announced May 2013.
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Nitrogen-Functionalized Graphene Nanoflakes (GNFs:N): Tunable Photoluminescence and Electronic Structures
Authors:
J. W. Chiou,
Sekhar C. Ray,
S. I. Peng,
C. H. Chuang,
B. Y. Wang,
H. M. Tsai,
C. W. Pao,
H. -J. Lin,
Y. C. Shao,
Y. F. Wang,
S. C. Chen,
W. F. Pong,
Y. C. Yeh,
C. W. Chen,
L. -C. Chen,
K. -H. Chen,
M. -H. Tsai,
A. Kumar,
A. Ganguly,
P. Papakonstantinou,
H. Yamane,
N. Kosugi,
T. Regier,
L. Liu,
T. K. Sham
Abstract:
This study investigates the strong photoluminescence (PL) and X-ray excited optical luminescence observed in nitrogen-functionalized 2D graphene nanoflakes (GNFs:N), which arise from the significantly enhanced density of states in the region of π states and the gap between π and π* states. The increase in the number of the sp2 clusters in the form of pyridine-like N-C, graphite-N-like, and the C=O…
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This study investigates the strong photoluminescence (PL) and X-ray excited optical luminescence observed in nitrogen-functionalized 2D graphene nanoflakes (GNFs:N), which arise from the significantly enhanced density of states in the region of π states and the gap between π and π* states. The increase in the number of the sp2 clusters in the form of pyridine-like N-C, graphite-N-like, and the C=O bonding and the resonant energy transfer from the N and O atoms to the sp2 clusters were found to be responsible for the blue shift and the enhancement of the main PL emission feature. The enhanced PL is strongly related to the induced changes of the electronic structures and bonding properties, which were revealed by the X-ray absorption near-edge structure, X-ray emission spectroscopy, and resonance inelastic X-ray scattering. The study demonstrates that PL emission can be tailored through appropriate tuning of the nitrogen and oxygen contents in GNFs and pave the way for new optoelectronic devices.
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Submitted 4 August, 2012;
originally announced August 2012.
