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Control over Berry Curvature Dipole with Electric Field in WTe2
Authors:
Xing-Guo Ye,
Huiying Liu,
Peng-Fei Zhu,
Wen-Zheng Xu,
Shengyuan A. Yang,
Nianze Shang,
Kaihui Liu,
Zhi-Min Liao
Abstract:
Berry curvature dipole plays an important role in various nonlinear quantum phenomena. However, the maximum symmetry allowed for nonzero Berry curvature dipole in the transport plane is a single mirror line, which strongly limits its effects in materials. Here, via probing the nonlinear Hall effect, we demonstrate the generation of Berry curvature dipole by applied dc electric field in WTe2, which…
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Berry curvature dipole plays an important role in various nonlinear quantum phenomena. However, the maximum symmetry allowed for nonzero Berry curvature dipole in the transport plane is a single mirror line, which strongly limits its effects in materials. Here, via probing the nonlinear Hall effect, we demonstrate the generation of Berry curvature dipole by applied dc electric field in WTe2, which is used to break the symmetry constraint. A linear dependence between the dipole moment of Berry curvature and the dc electric field is observed. The polarization direction of the Berry curvature is controlled by the relative orientation of the electric field and crystal axis, which can be further reversed by changing the polarity of the dc field. Our Letter provides a route to generate and control Berry curvature dipole in broad material systems and to facilitate the development of nonlinear quantum devices.
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Submitted 5 January, 2023;
originally announced January 2023.
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Orbit-transfer torque driven field-free switching of perpendicular magnetization
Authors:
Xing-Guo Ye,
Peng-Fei Zhu,
Wen-Zheng Xu,
Nianze Shang,
Kaihui Liu,
Zhi-Min Liao
Abstract:
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy, the former has limited endurance because of the high current…
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The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy, the former has limited endurance because of the high current density directly through the junction, while the latter requires an external magnetic field or unconventional configuration to break the symmetry. Here we propose and realize the orbit-transfer torque (OTT), that is, exerting torque on the magnetization using the orbital magnetic moments, and thus demonstrate a new strategy for current-driven PM reversal without external magnetic field. The perpendicular polarization of orbital magnetic moments is generated by a direct current in a few-layer WTe2 due to the existence of nonzero Berry curvature dipole, and the polarization direction can be switched by changing the current polarity. Guided by this principle, we construct the WTe2/Fe3GeTe2 heterostructures, where the OTT driven field-free deterministic switching of PM is achieved.
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Submitted 15 February, 2022;
originally announced February 2022.
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Controllable selective exfoliation of high-quality graphene nanosheets and nanodots by ionic liquid assisted grinding
Authors:
Nai Gui Shang,
Pagona Papakonstantinou,
Surbhi Sharma,
Gennady Lubarsky,
Meixian Li,
David W. McNeill,
Aidan J. Quinn,
Wuzong Zhou,
Ross Blackley
Abstract:
Bulk quantities of graphene nanosheets and nanodots have been selectively fabricated by mechanical grinding exfoliation of natural graphite in a small quantity of ionic liquids. The resulting graphene sheets and dots are solvent free with low levels of naturally absorbed oxygen, inherited from the starting graphite. The sheets are only two to five layers thick. The graphene nanodots have diameters…
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Bulk quantities of graphene nanosheets and nanodots have been selectively fabricated by mechanical grinding exfoliation of natural graphite in a small quantity of ionic liquids. The resulting graphene sheets and dots are solvent free with low levels of naturally absorbed oxygen, inherited from the starting graphite. The sheets are only two to five layers thick. The graphene nanodots have diameters in the range of 9-29 nm and heights in the range of 1-16 nm, which can be controlled by changing the processing time.
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Submitted 13 January, 2012;
originally announced January 2012.
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Irradiation Enhanced paramagnetism on graphene nanoflakes
Authors:
Andreas Ney,
Pagona Papakonstantinou,
Ajay Kumar,
Nai-Gui Shang,
Nianhua Peng
Abstract:
We have studied the magnetization of vertically aligned graphene nanoflakes irradiated with nitrogen ions of 100 KeV energy and doses in the range 10^11- 10^17 ions/cm2. The non-irradiated graphene nanoflakes show a paramagnetic contribution, which is increased progressively by ion irradiation at low doses up to 10^15 /cm^2. However, further increase on implantation dose reduces the magnetic momen…
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We have studied the magnetization of vertically aligned graphene nanoflakes irradiated with nitrogen ions of 100 KeV energy and doses in the range 10^11- 10^17 ions/cm2. The non-irradiated graphene nanoflakes show a paramagnetic contribution, which is increased progressively by ion irradiation at low doses up to 10^15 /cm^2. However, further increase on implantation dose reduces the magnetic moment which coincides with the onset of amorphization as verified by both Raman and X-ray photoelectron spectroscopic data. Overall, our results demonstrate the absence of ferromagnetism on either implanted or unimplanted samples from room temperature down to a temperature of 5K
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Submitted 7 September, 2011;
originally announced September 2011.
