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Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
Authors:
C. B. Simmons,
Teck Seng Koh,
Nakul Shaji,
Madhu Thalakulam,
L. J. Klein,
Hua Qin,
H. Luo,
D. E. Savage,
M. G. Lagally,
A. J. Rimberg,
Robert Joynt,
Robert Blick,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when…
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We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed.
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Submitted 5 April, 2011; v1 submitted 31 August, 2010;
originally announced August 2010.
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Single-electron quantum dot in Si/SiGe with integrated charge-sensing
Authors:
C. B. Simmons,
Madhu Thalakulam,
Nakul Shaji,
Levente J. Klein,
Hua Qin,
R. H. Blick,
D. E. Savage,
M. G. Lagally,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single…
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Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.
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Submitted 1 November, 2007; v1 submitted 19 October, 2007;
originally announced October 2007.
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Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Authors:
Nakul Shaji,
C. B. Simmons,
Madhu Thalakulam,
Levente J. Klein,
Hua Qin,
H. Luo,
D. E. Savage,
M. G. Lagally,
A. J. Rimberg,
R. Joynt,
M. Friesen,
R. H. Blick,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in…
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Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics.
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Submitted 11 December, 2008; v1 submitted 6 August, 2007;
originally announced August 2007.
