Showing 1–50 of 120 results for author: Schuh, D

Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems

Authors: Erwin Mönch, Sophia Schweiss, Ivan Yahniuk, Maxim L. Savchenko, Ivan A. Dmitriev, Alexey Shuvaev, Andrei Pimenov, Dieter Schuh, Dominique Bougeard, Sergey D. Ganichev

Abstract: Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that this anomaly is strongly intensity dependent, and the ratio of the low-temperature photoresistance signals for the CR-active (CRA) and CR-inactive (CRI) polariti… ▽ More Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that this anomaly is strongly intensity dependent, and the ratio of the low-temperature photoresistance signals for the CR-active (CRA) and CR-inactive (CRI) polarities of magnetic field increases with lowering power, but, nevertheless, remains substantially lower than expected from conventional theory assuming interaction of the plane electromagnetic wave with the uniform 2DES. Our analysis shows that all data can be well described by the nonlinear CR-enhanced electron gas heating in both CRA and CRI regimes. This description, however, requires a source of anomalous absorption of radiation in the CRI regime. It can stem from evanescent electromagnetic fields originating from the near-field diffraction within or in the vicinity of the quantum well hosting the 2DES. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Comments: 15 pages, 8 figures

Controlled rotation of electrically injected spins in a non-ballistic spin field-effect transistor

Authors: Franz Eberle, Dieter Schuh, Benedikt Grünewald, Dominique Bougeard, Dieter Weiss, Mariusz Ciorga

Abstract: Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few reports on electrically controlled spin precession in sFET-like devices. These devices operated in the ballistic regime, as postulated in the original sFET proposal… ▽ More Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few reports on electrically controlled spin precession in sFET-like devices. These devices operated in the ballistic regime, as postulated in the original sFET proposal, and hence need high SOC channel materials in practice. Here, we demonstrate gate-controlled precession of spins in a non-ballistic sFET using an array of narrow diffusive wires as a channel between a spin source and a spin drain. Our study shows that spins traveling in a semiconducting channel can be coherently rotated on a distance far exceeding the electrons mean free path, and spin-transistor functionality can be thus achieved in non-ballistic channels with relatively low SOC, relaxing two major constraints of the original sFET proposal. △ Less

Submitted 3 March, 2023; originally announced March 2023.

Comments: Main text: 21 pages, 4 figures. Supplementary Information:11 pages, 4 figures

Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems

Authors: Erwin Mönch, Philipp Euringer, Georg-Maximilian Hüttner, Ivan A. Dmitriev, Dieter Schuh, Marina Marocko, Jonathan Eroms, Dominique Bougeard, Dieter Weiss, Sergey D. Ganichev

Abstract: Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active one. This observation conflicts with simultaneous transmission measurements and contradicts the conventional theory of CR which predicts no resonant response for… ▽ More Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active one. This observation conflicts with simultaneous transmission measurements and contradicts the conventional theory of CR which predicts no resonant response for the CR-inactive geometry. We provide a possible route to explain this fundamental failure of the conventional description of light-matter interaction and discuss a modified electron dynamics near strong impurities that may provide a local near-field coupling of the two helicity modes of the terahertz field at low temperatures. This should result in a CR-enhanced local absorption and, thus, CR photoconductivity for both magnetic field polarities. △ Less

Submitted 15 June, 2022; originally announced June 2022.

Comments: 21 pages, 20 figures

Gating of two-dimensional electron systems in InGaAs/InAlAs heterostructures: the role of the intrinsic InAlAs deep donor defects

Authors: Michael Prager, Michaela Trottmann, Jaydean Schmidt, Lucia Ebnet, Dieter Schuh, Dominique Bougeard

Abstract: We present an analysis of gated InGaAs/InAlAs heterostructures, a device platform to realize spinorbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate the gate response of the studied two-dimensional electron systems to heterostructure design parameters, in particular the indium concentration. We explain the oc… ▽ More We present an analysis of gated InGaAs/InAlAs heterostructures, a device platform to realize spinorbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate the gate response of the studied two-dimensional electron systems to heterostructure design parameters, in particular the indium concentration. We explain the occurrence of metastable electrostatic configurations showing reduced capacitive coupling and provide gate operation strategies to reach classical field effect control in such heterostructures. Our study highlights the role of the intrinsic InAlAs deep donor defects, as they govern the dynamics of the electrostatic response to gate voltage variations through charge trap** and unintentional tunneling. △ Less

Submitted 19 November, 2021; originally announced November 2021.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. Applied, 16, 064028 (2021)

Dynamic detection of current-induced spin-orbit magnetic fields: a phase independent approach

Authors: L. Chen, R. Islinger, J. Stigloher, M. M. Decker, M. Kronseder, D. Schuh, D. Bougeard, D. Weiss, C. H. Back

Abstract: Current induced spin-orbit torques (SOTs) in ferromagnet/non-magnetic metal heterostructures open vast possibilities to design spintronic devices to store, process and transmit information in a simple architecture. It is a central task to search for efficient SOT-devices, and to quantify the magnitude as well as the symmetry of current-induced spin-orbit magnetic fields (SOFs). Here, we report a n… ▽ More Current induced spin-orbit torques (SOTs) in ferromagnet/non-magnetic metal heterostructures open vast possibilities to design spintronic devices to store, process and transmit information in a simple architecture. It is a central task to search for efficient SOT-devices, and to quantify the magnitude as well as the symmetry of current-induced spin-orbit magnetic fields (SOFs). Here, we report a novel approach to determine the SOFs based on magnetization dynamics by means of time-resolved magneto-optic Kerr microscopy. A microwave current in a narrow Fe/GaAs (001) stripe generates an Oersted field as well as SOFs due to the reduced symmetry at the Fe/GaAs interface, and excites standing spin wave (SSW) modes because of the lateral confinement. Due to their different symmetries, the SOFs and the Oersted field generate distinctly different mode patterns. Thus it is possible to determine the magnitude of the SOFs from an analysis of the shape of the SSW patterns. Specifically, this method, which is conceptually different from previous approaches based on lineshape analysis, is phase independent and self-calibrated. It can be used to measure the current induced SOFs in other material systems, e.g., ferromagnetic metal/non-magnetic metal heterostructures. △ Less

Submitted 14 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. B 104, 014425 (2021)

Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage

Authors: Pascal Cerfontaine, Tim Botzem, Julian Ritzmann, Simon Sebastian Humpohl, Arne Ludwig, Dieter Schuh, Dominique Bougeard, Andreas D. Wieck, Hendrik Bluhm

Abstract: Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses… ▽ More Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses new challenges for high-fidelity control. Here, we demonstrate exchange-based single-qubit gates of two-electron spin qubits in GaAs double quantum dots. Using careful pulse optimization and closed-loop tuning, we achieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and a leakage rate of $0.13\%$ out of the computational subspace. These results open new perspectives for microwave-free control of singlet-triplet qubits in GaAs and other materials. △ Less

Submitted 22 January, 2021; v1 submitted 12 June, 2019; originally announced June 2019.

Comments: Pascal Cerfontaine and Tim Botzem contributed equally to this work. This article supersedes arXiv:1606.01897. Published version available at https://www.nature.com/articles/s41467-020-17865-3

Journal ref: Nature Communications 11, 4144 (2020)

Terahertz light-matter interaction beyond unity coupling strength

Authors: Andreas Bayer, Marcel Pozimski, Simon Schambeck, Dieter Schuh, Rupert Huber, Dominique Bougeard, Christoph Lange

Abstract: Achieving control over light-matter interaction in custom-tailored nanostructures is at the core of modern quantum electrodynamics [1-15]. In ultrastrongly coupled systems [5-15], excitation is repeatedly exchanged between a resonator and an electronic transition at a rate known as the vacuum Rabi frequency $Ω_R$. For $Ω_R$ approaching the resonance frequency $ω_c$, novel quantum phenomena includi… ▽ More Achieving control over light-matter interaction in custom-tailored nanostructures is at the core of modern quantum electrodynamics [1-15]. In ultrastrongly coupled systems [5-15], excitation is repeatedly exchanged between a resonator and an electronic transition at a rate known as the vacuum Rabi frequency $Ω_R$. For $Ω_R$ approaching the resonance frequency $ω_c$, novel quantum phenomena including squeezed states [16], Dicke superradiant phase transitions [17,18], the collapse of the Purcell effect [19], and a population of the ground state with virtual photon pairs [16,20] are predicted. Yet, the experimental realization of optical systems with $Ω_R$/$ω_c$ has remained elusive. Here, we introduce a paradigm change in the design of light-matter coupling by treating the electronic and the photonic components of the system as an entity instead of optimizing them separately. Using the electronic excitation to not only boost the oscillator strength but furthermore tailor the shape of the vacuum mode, we push $Ω_R$/$ω_c$ of cyclotron resonances ultrastrongly coupled to metamaterials far beyond unity. As one prominent illustration of the unfolding possibilities, we calculate a ground state population of 0.37 virtual photons for our best structure with $Ω_R$/$ω_c$ = 1.43, and suggest a realistic experimental scenario for measuring vacuum radiation by cutting-edge terahertz quantum detection [21,22]. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Journal ref: Nano Lett. 17, 6340 (2017)

Electric-field modification of interfacial spin-orbit field-vector

Authors: L. Chen, M. Gmitra, M. Vogel, R. Islinger, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, D. Weiss, C. H. Back

Abstract: Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a ferromagnet's magnetization,thus offering an efficient way for its manipulation.To further reduce power consumption in spin-orbit torque devices, it is highly d… ▽ More Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a ferromagnet's magnetization,thus offering an efficient way for its manipulation.To further reduce power consumption in spin-orbit torque devices, it is highly desirable to control iSOFs by the field-effect, where power consumption is determined by charging/discharging a capacitor5,6. In particular, efficient electric-field control of iSOFs acting on ferromagnetic metals is of vital importance for practical applications. It is known that in single crystalline Fe/GaAs (001) heterostructures with C2v symmetry, interfacial SOFs emerge at the Fe/GaAs (001) interface due to the lack of inversion symmetry7,8. Here, we show that by applying a gate-voltage across the Fe/GaAs interface, interfacial SOFs acting on Fe can be robustly modulated via the change of the magnitude of the interfacial spin-orbit interaction. Our results show that, for the first time, the electric-field in a Schottky barrier is capable of modifying SOFs, which can be exploited for the development of low-power-consumption spin-orbit torque devices. △ Less

Submitted 26 April, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 5 figures

Tuning methods for semiconductor spin--qubits

Authors: Tim Botzem, Michael D. Shulman, Sandra Foletti, Shannon P. Harvey, Oliver E. Dial, Patrick Bethke, Pascal Cerfontaine, Robert P. G. McNeil, Diana Mahalu, Vladimir Umansky, Arne Ludwig, Andreas Wieck, Dieter Schuh, Dominique Bougeard, Amir Yacoby, Hendrik Bluhm

Abstract: We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to t… ▽ More We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to the surrounding leads and the identification of the various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multi-qubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds, and require almost no human interference. △ Less

Submitted 11 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. Applied 10, 054026 (2018)

Asymmetric $g$ tensor in low-symmetry two-dimensional hole systems

Authors: C. Gradl, R. Winkler, M. Kempf, J. Holler, D. Schuh, D. Bougeard, A. Hernández-Mínguez, K. Biermann, P. V. Santos, C. Schüller, T. Korn

Abstract: The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman spin splitting. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performi… ▽ More The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman spin splitting. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performing time-resolved Kerr rotation measurements, we found a non-diagonal tensor $g$ that manifests itself in unusual precessional motion as well as distinct dependencies of hole spin dynamics on the direction of the magnetic field $\vec{B}$. We quantify the individual components of the tensor $g$ for [113]-, [111]- and [110]-grown samples. We complement the experiments by a comprehensive theoretical study of Zeeman splitting in in-plane and out-of-plane fields $\vec{B}$. To this end, we develop a detailed multiband theory for the tensor $g$. Using perturbation theory, we derive transparent analytical expressions for the components of the tensor $g$ that we complement with accurate numerical calculations based on our theoretical framework. We obtain very good agreement between experiment and theory. Our study demonstrates that the tensor $g$ is neither symmetric nor antisymmetric. Opposite off-diagonal components can differ in size by up to an order of magnitude. △ Less

Submitted 21 June, 2018; v1 submitted 25 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. X 8, 021068 (2018)

Magneto-resistance oscillations induced by high-intensity terahertz radiation

Authors: T. Herrmann, Z. D. Kvon, I. A. Dmitriev, D. A. Kozlov, B. Jentzsch, M. Schneider, L. Schell, V. V. Bel'kov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, S. D. Ganichev

Abstract: We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiment… ▽ More We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from $0.1$ W/cm$^2$ to $10^4$ W/cm$^2$ reveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit function $I/(1 + I/I_s)^β$ with $β\sim 1$. The saturation intensity Is is of the order of tens of W/cm$^2$ and increases by six times by increasing the radiation frequency from $0.6$ to $1.1$ THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 96, 115449 (2017)

Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device

Authors: Martin Oltscher, Franz Eberle, Thomas Kuczmik, Andreas Bayer, Dieter Schuh, Dominique Bougeard, Mariusz Ciorga, Dieter Weiss

Abstract: A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last decades in devices with lateral semiconducting (SC) transport channels between ferromagnetic (FM) source (S) and drain (D) contacts has bee… ▽ More A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last decades in devices with lateral semiconducting (SC) transport channels between ferromagnetic (FM) source (S) and drain (D) contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both, a large two terminal magnetoresistance in lateral 2DES-based spin valve geometry, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The large magnetoresistance is due to finite electric field effects at the FM/SC interface, which boost spin-to-charge conversion. The gating scheme we use is based on switching between uni- and bi-directional spin diffusion, without resorting to the spin-orbit coupling. △ Less

Submitted 16 June, 2017; originally announced June 2017.

Comments: Main text: 18 pages, 4 figures; supplementary material: 14 pages, 9 figures

Collective electronic excitation in a trapped ensemble of photogenerated dipolar excitons and free holes revealed by inelastic light scattering

Authors: Sebastian Dietl, Sheng Wang, Dieter Schuh, Werner Wegscheider, Jörg P. Kotthaus, Aron Pinczuk, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal… ▽ More Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal a very sharp low-lying collective mode that is identified at an energy of 0.44 meV and a FWHM of only ~50 $μ$eV. This mode is interpreted as a plasmon excitation of the excess hole system coupled to the photogenerated indirect excitons. The emission energy of the indirect excitons shifts under the application of a perpendicular applied electric field with the quantum-confined Stark effect unperturbed from the presence of free charge carriers. Our results illustrate the potential of studying low-lying collective excitations in photogenerated exciton systems to explore the many-body phase diagram, related phase transitions, and interaction physics. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 19 pages, 5 figures

Overflow of a dipolar exciton trap at high magnetic fields

Authors: S. Dietl, K. Kowalik-Seidl, D. Schuh, W. Wegscheider, A. W. Holleitner, U. Wurstbauer

Abstract: We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic sh… ▽ More We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic shift. At intermediate fields, magnetic field dependent correction terms apply which follow the characteristics of a neutral magnetoexciton. Due to a combined effect of an increasing binding energy and lifetime, the exciton density is roughly doubled from zero to about seven Tesla. At the latter high field value, the charge carriers occupy only the lowest Landau level. In this situation, the exciton trap can overflow independently from the electrostatic depth of the trap** potential, and the energy shift of the excitons caused by the so-called quantum confined Stark effect is effectively compensated. Instead, the exciton energetics seem to be driven by the magnetic field dependent renormalization of the many-body interaction terms. In this regime, the impact of parasitic in-plane fields at the edge of trap** potential is eliminated. △ Less

Submitted 16 November, 2016; originally announced November 2016.

Comments: 18 pages, 4 figures

Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Authors: Ya. V. Terent'ev, S. N. Danilov, M. V. Durnev, J. Loher, D. Schuh, D. Bougeard, S. V. Ivanov, S. D. Ganichev

Abstract: Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting… ▽ More Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band kp method and g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying tilted magnetic field. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Feedback-tuned noise-resilient gates for encoded spin qubits

Authors: Pascal Cerfontaine, Tim Botzem, Simon Sebastian Humpohl, Dieter Schuh, Dominique Bougeard, Hendrik Bluhm

Abstract: Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace… ▽ More Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Here, we realize high-fidelity single qubit operations for a qubit encoded in two electron spins in GaAs quantum dots by iterative tuning of the all-electrical control pulses. Using randomized benchmarking, we find an average gate fidelity of $\mathcal{F} = (98.5 \pm 0.1)\,\%$ and determine the leakage rate between the computational subspace and other states to $\mathcal{L} = (0.4\pm0.1)\,\%$. These results also demonstrate that high fidelity gates can be realized even in the presence of nuclear spins as in III-V semiconductors. △ Less

Submitted 6 June, 2016; originally announced June 2016.

Comments: Pascal Cerfontaine and Tim Botzem contributed equally to this work

Coherent cyclotron motion beyond Kohn's theorem

Authors: T. Maag, A. Bayer, S. Baierl, M. Hohenleutner, T. Korn, C. Schüller, D. Schuh, D. Bougeard, C. Lange, R. Huber M. Mootz, J. E. Sipe, S. W. Koch, M. Kira

Abstract: In solids, the high density of charged particles makes many-body interactions a pervasive principle governing optics and electronics[1-12]. However, Walter Kohn found in 1961 that the cyclotron resonance of Landau-quantized electrons is independent of the seemingly inescapable Coulomb interaction between electrons[2]. While this surprising theorem has been exploited in sophisticated quantum phenom… ▽ More In solids, the high density of charged particles makes many-body interactions a pervasive principle governing optics and electronics[1-12]. However, Walter Kohn found in 1961 that the cyclotron resonance of Landau-quantized electrons is independent of the seemingly inescapable Coulomb interaction between electrons[2]. While this surprising theorem has been exploited in sophisticated quantum phenomena[13-15] such as ultrastrong light-matter coupling[16], superradiance[17], and coherent control[18], the complete absence of nonlinearities excludes many intriguing possibilities, such as quantum-logic protocols[19]. Here, we use intense terahertz pulses to drive the cyclotron response of a two-dimensional electron gas beyond the protective limits of Kohn's theorem. Anharmonic Landau ladder climbing and distinct terahertz four- and six-wave mixing signatures occur, which our theory links to dynamic Coulomb effects between electrons and the positively charged ion background. This new context for Kohn's theorem unveils previously inaccessible internal degrees of freedom of Landau electrons, opening up new realms of ultrafast quantum control for electrons. △ Less

Submitted 3 June, 2016; v1 submitted 2 June, 2016; originally announced June 2016.

MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation

Authors: T. Herrmann, I. A. Dmitriev, D. A. Kozlov, M. Schneider, B. Jentzsch, Z. D. Kvon, P. Olbrich, V. V. Bel`kov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, S. D. Ganichev

Abstract: We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced… ▽ More We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation. △ Less

Submitted 5 March, 2016; originally announced March 2016.

Landau-Zener interference at bichromatic driving

Authors: F. Forster, M. Mühlbacher, R. Blattmann, D. Schuh, W. Wegscheider, S. Ludwig, S. Kohler

Abstract: We investigate experimentally and theoretically the interference at avoided crossings which are repeatedly traversed as a consequence of an applied ac field. Our model system is a charge qubit in a serial double quantum dot connected to two leads. Our focus lies on effects caused by simultaneous driving with two different frequencies. We work out how the commensurability of the driving frequencies… ▽ More We investigate experimentally and theoretically the interference at avoided crossings which are repeatedly traversed as a consequence of an applied ac field. Our model system is a charge qubit in a serial double quantum dot connected to two leads. Our focus lies on effects caused by simultaneous driving with two different frequencies. We work out how the commensurability of the driving frequencies affects the symmetry of the interference patterns both in real space and in Fourier space. For commensurable frequencies, the symmetry depends sensitively on the relative phase between the two modes, whereas for incommensurable frequencies the symmetry of monochromatic driving is always recovered. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. B 92, 245422 (2015)

Multistability and spin diffusion enhanced lifetimes in dynamic nuclear polarization in a double quantum dot

Authors: Florian Forster, Max Mühlbacher, Dieter Schuh, Werner Wegscheider, Geza Giedke, Stefan Ludwig

Abstract: The control of nuclear spins in quantum dots is essential to explore their many-body dynamics and exploit their prospects for quantum information processing. We present a unique combination of dynamic nuclear spin polarization and electric-dipole-induced spin resonance in an electrostatically defined double quantum dot (DQD) exposed to the strongly inhomogeneous field of two on-chip nanomagnets. O… ▽ More The control of nuclear spins in quantum dots is essential to explore their many-body dynamics and exploit their prospects for quantum information processing. We present a unique combination of dynamic nuclear spin polarization and electric-dipole-induced spin resonance in an electrostatically defined double quantum dot (DQD) exposed to the strongly inhomogeneous field of two on-chip nanomagnets. Our experiments provide direct and unrivaled access to the nuclear spin polarization distribution and allow us to establish and characterize multiple fixed points. Further, we demonstrate polarization of the DQD environment by nuclear spin diffusion which significantly stabilizes the nuclear spins inside the DQD. △ Less

Submitted 5 October, 2015; v1 submitted 26 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 92, 245303 (2015)

Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs

Authors: Tim Botzem, Robert P. G. McNeil, Dieter Schuh, Dominique Bougeard, Hendrik Bluhm

Abstract: Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear s… ▽ More Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear spin dynamics. One might thus expect them to enhance electron spin coherence. Here we show experimentally that for gate-defined GaAs quantum dots, quadrupolar broadening of the nuclear Larmor precession can also reduce electron spin coherence due to faster decorrelation of transverse nuclear fields. However, this effect can be eliminated for appropriate field directions. Furthermore, we observe an additional modulation of spin coherence that can be attributed to an anisotropic electronic $g$-tensor. These results complete our understanding of dephasing in gated quantum dots and point to mitigation strategies. They may also help to unravel unexplained behaviour in related systems such as self-assembled quantum dots and III-V nanowires. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Comments: 6 pages, 4 figures

Electric-dipole-induced spin resonance in a lateral double quantum dot incorporating two single domain nanomagnets

Authors: F. Forster, M. Mühlbacher, D. Schuh, W. Wegscheider, S. Ludwig

Abstract: On-chip magnets can be used to implement relatively large local magnetic field gradients in na- noelectronic circuits. Such field gradients provide possibilities for all-electrical control of electron spin-qubits where important coupling constants depend crucially on the detailed field distribution. We present a double quantum dot (QD) hybrid device laterally defined in a GaAs / AlGaAs het- erostr… ▽ More On-chip magnets can be used to implement relatively large local magnetic field gradients in na- noelectronic circuits. Such field gradients provide possibilities for all-electrical control of electron spin-qubits where important coupling constants depend crucially on the detailed field distribution. We present a double quantum dot (QD) hybrid device laterally defined in a GaAs / AlGaAs het- erostructure which incorporates two single domain nanomagnets. They have appreciably different coercive fields which allows us to realize four distinct configurations of the local inhomogeneous field distribution. We perform dc transport spectroscopy in the Pauli-spin blockade regime as well as electric-dipole-induced spin resonance (EDSR) measurements to explore our hybrid nanodevice. Characterizing the two nanomagnets we find excellent agreement with numerical simulations. By comparing the EDSR measurements with a second double QD incorporating just one nanomagnet we reveal an important advantage of having one magnet per QD: It facilitates strong field gradients in each QD and allows to control the electron spins individually for instance in an EDSR experi- ment. With just one single domain nanomagnet and common QD geometries EDSR can likely be performed only in one QD. △ Less

Submitted 6 March, 2015; originally announced March 2015.

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

Authors: Ya. V. Terent'ev, S. N. Danilov, H. Plank, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, I. V. Rozhansky, S. V. Ivanov, D. R. Yakovlev, S. D. Ganichev

Abstract: We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field… ▽ More We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed. △ Less

Submitted 21 February, 2015; originally announced February 2015.

On the relation between the 0.7-anomaly and the Kondo effect: Geometric Crossover between a Quantum Point Contact and a Kondo Quantum Dot

Authors: Jan Heyder, Florian Bauer, Enrico Schubert, David Borowsky, Dieter Schuh, Werner Wegscheider, Jan von Delft, Stefan Ludwig

Abstract: Quantum point contacts (QPCs) and quantum dots (QDs), two elementary building blocks of semiconducting nanodevices, both exhibit famously anomalous conductance features: the 0.7-anomaly in the former case, the Kondo effect in the latter. For both the 0.7-anomaly and the Kondo effect, the conductance shows a remarkably similar low-energy dependence on temperature $T$, source-drain voltage… ▽ More Quantum point contacts (QPCs) and quantum dots (QDs), two elementary building blocks of semiconducting nanodevices, both exhibit famously anomalous conductance features: the 0.7-anomaly in the former case, the Kondo effect in the latter. For both the 0.7-anomaly and the Kondo effect, the conductance shows a remarkably similar low-energy dependence on temperature $T$, source-drain voltage $V_{\rm sd}$ and magnetic field $B$. In a recent publication [F. Bauer et al., Nature, 501, 73 (2013)], we argued that the reason for these similarities is that both a QPC and a KQD feature spin fluctuations that are induced by the sample geometry, confined in a small spatial regime, and enhanced by interactions. Here we further explore this notion experimentally and theoretically by studying the geometric crossover between a QD and a QPC, focussing on the $B$-field dependence of the conductance. We introduce a one-dimensional model that reproduces the essential features of the experiments, including a smooth transition between a Kondo QD and a QPC with 0.7-anomaly. We find that in both cases the anomalously strong negative magnetoconductance goes hand in hand with strongly enhanced local spin fluctuations. Our experimental observations include, in addition to the Kondo effect in a QD and the 0.7-anomaly in a QPC, Fano interference effects in a regime of coexistence between QD and QPC physics, and Fabry-Perot-type resonances on the conductance plateaus of a clean QPC. We argue that Fabry-Perot-type resonances occur generically if the electrostatic potential of the QPC generates a flatter-than-parabolic barrier top. △ Less

Submitted 11 September, 2014; originally announced September 2014.

Journal ref: Phys. Rev. B 92, 195401 (2015)

Hole spin dynamics and hole $g$ factor anisotropy in coupled quantum well systems

Authors: C. Gradl, M. Kempf, D. Schuh, D. Bougeard, R. Winkler, C. Schüller, T. Korn

Abstract: Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole… ▽ More Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole $g$ factor via time-resolved Kerr rotation, and for the low-symmetry crystallographic orientations (110) and (113a), we observe a large in-plane anisotropy of the hole $g$ factor, in good agreement with our theoretical calculations. Using resonant spin amplification, we also observe an anisotropy of the hole spin dephasing in the (110)-grown structure, indicating that crystal symmetry may be used to control hole spin dynamics. △ Less

Submitted 11 August, 2014; originally announced August 2014.

Shot Noise Induced by Nonequilibrium Spin Accumulation

Authors: Tomonori Arakawa, Junichi Shiogai, Mariusz Ciorga, Martin Utz, Dieter Schuh, Makoto Kohda, Junsaku Nitta, Dominique Bougeard, Dieter Weiss, Teruo Ono, Kensuke Kobayashi

Abstract: When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this… ▽ More When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport. △ Less

Submitted 24 January, 2015; v1 submitted 2 July, 2014; originally announced July 2014.

Comments: 5 pages and Supplemental Material

Journal ref: Phys. Rev. Lett. 114, 016601 (2015)

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

Authors: F. Dettwiler, P. Fallahi, D. Scholz, E. Reiger, D. Schuh, A. Badolato, W. Wegscheider, D. M. Zumbühl

Abstract: We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the do… ▽ More We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas. △ Less

Submitted 2 April, 2014; v1 submitted 30 March, 2014; originally announced March 2014.

Comments: 4 pages, 5 figures (color)

Magnetoresistance Induced by Rare Strong Scatterers in a High Mobility 2DEG

Authors: L. Bockhorn, I. V. Gornyi, D. Schuh, C. Reichl, W. Wegscheider, R. J. Haug

Abstract: We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge magnetoresistance at larger fields. The peak shows parabolic magnetic field dependence and is attributed to the interplay of smooth disorder and rare strong sca… ▽ More We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge magnetoresistance at larger fields. The peak shows parabolic magnetic field dependence and is attributed to the interplay of smooth disorder and rare strong scatterers. We identify the rare strong scatterers as macroscopic defects in the material and determine their density from the peak curvature. △ Less

Submitted 25 August, 2014; v1 submitted 30 January, 2014; originally announced January 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 90, 165434 (2014)

Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Authors: Ya. V. Terent'ev, S. N. Danilov, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, M. S. Mukhin, S. V. Ivanov, S. D. Ganichev

Abstract: Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by… ▽ More Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes. △ Less

Submitted 30 January, 2014; v1 submitted 29 January, 2014; originally announced January 2014.

Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

Authors: R. Voelkl, M. Schwemmer, M. Griesbeck, S. A. Tarasenko, D. Schuh, W. Wegscheider, C. Schueller, T. Korn

Abstract: We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarization-resolved photoluminescence. Under weak excitation conditions at liquid-helium temper… ▽ More We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarization-resolved photoluminescence. Under weak excitation conditions at liquid-helium temperatures, we observe spin lifetimes above 100 ns in one of our samples, which are reduced with increasing excitation density due to additional, hole-mediated, spin dephasing. The spin dynamic is strongly influenced by the carrier density and the ionization of remote donors, which can be controlled by temperature and above-barrier illumination. The absolute value of the average electron spin polarization in the samples is directly observable in the circular polarization of photoluminescence collected under circularly polarized excitation and reaches values of about 5 percent. Spin diffusion is studied by varying the distance between pump and probe beams in micro-spectroscopy experiments. We observe diffusion lengths above 100 $μ$m and, at high excitation intensity, a nonmonotonic dependence of the spin polarization on the pump-probe distance. △ Less

Submitted 28 October, 2013; originally announced October 2013.

Comments: 10 pages, 6 figures

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

Authors: Junichi Shiogai, Mariusz Ciorga, Martin Utz, Dieter Schuh, Makoto Kohda, Dominique Bougeard, Tsutomu Nojima, Junsaku Nitta, Dieter Weiss

Abstract: We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, wher… ▽ More We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band. △ Less

Submitted 20 December, 2013; v1 submitted 23 October, 2013; originally announced October 2013.

Journal ref: Phys. Rev. B 89, 081307 (2014)

Characterization of Qubit Dephasing by Landau-Zener Interferometry

Authors: F. Forster, G. Petersen, S. Manus, P. Hänggi, D. Schuh, W. Wegscheider, S. Kohler, S. Ludwig

Abstract: Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM)… ▽ More Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM) quantum interference of the resulting superposition state. We demonstrate that LZSM interferometry is a viable and very general tool to not only study qubit properties but beyond to decipher decoherence caused by complex environmental influences. Our scheme is based on straightforward steady state experiments. The coherence time of our two-electron charge qubit is limited by electron-phonon interaction. It is much longer than previously reported for similar structures. △ Less

Submitted 24 September, 2013; v1 submitted 23 September, 2013; originally announced September 2013.

Comments: 21 pages, 15 figures

Journal ref: Phys. Rev. Lett. 112, 116803 (2014)

Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

Authors: K. Korzekwa, C. Gradl, M. Kugler, S. Furthmeier, M. Griesbeck, M. Hirmer, D. Schuh, W. Wegscheider, T. Kuhn, C. Schüller, T. Korn, P. Machnikowski

Abstract: We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inve… ▽ More We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals. △ Less

Submitted 29 June, 2013; v1 submitted 26 June, 2013; originally announced June 2013.

Comments: 9 pages, 3 figures; corrected typos

Journal ref: Phys. Rev. B 88, 155303 (2013)

Finite-size effect in shot noise in hop** conduction

Authors: E. S. Tikhonov, V. S. Khrapai, D. V. Shovkun, D. Schuh

Abstract: We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hop** (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate qu… ▽ More We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hop** (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate quasiparticle charge measurements in the insulating regime. △ Less

Submitted 20 June, 2013; v1 submitted 21 February, 2013; originally announced February 2013.

Comments: accepted to JETP Letters

Journal ref: Pisma v ZhETF 98 (2), 131 (2013)

Quantum interference and phonon-mediated back-action in lateral quantum dot circuits

Authors: G. Granger, D. Taubert, C. E. Young, L. Gaudreau, A. Kam, S. A. Studenikin, P. Zawadzki, D. Harbusch, D. Schuh, W. Wegscheider, Z. R. Wasilewski, A. A. Clerk, S. Ludwig, A. S. Sachrajda

Abstract: Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indi… ▽ More Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure. △ Less

Submitted 30 January, 2013; originally announced January 2013.

Comments: 25 pages, 8 figures

Journal ref: Nature Physics 8, 522-527 (2012)

Large nuclear spin polarization in gate-defined quantum dots using a single-domain nanomagnet

Authors: Gunnar Petersen, Eric A. Hoffmann, Dieter Schuh, Werner Wegscheider, Geza Giedke, Stefan Ludwig

Abstract: The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field t… ▽ More The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field tends to compensate external magnetic fields. This turns out to be beneficial for polarizing the nuclear spin ensemble. We reach a nuclear spin polarization of ~50%, unrivaled in lateral dots, and explain our manipulation technique using a comprehensive rate equation model. △ Less

Submitted 13 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. Lett. 110, 177602 (2013)

All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

Authors: Markus Ehlert, Cheng Song, Mariusz Ciorga, Martin Utz, Dieter Schuh, Dominique Bougeard, Dieter Weiss

Abstract: We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From… ▽ More We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From the results we determine skew scattering and side jump contribution to the total spin hall conductivity and compare it with the results of experiments on higher conductive n-GaAs channels[Phys. Rev. Lett. 105,156602(2010)]. As a result we conclude that both skewness and side jump contribution cannot be fully independent on the conductivity of the channel. △ Less

Submitted 12 September, 2012; originally announced September 2012.

Comments: 14 pages, 4 figures

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

Authors: P. Olbrich, C. Zoth, P. Lutz, C. Drexler, V. V. Bel'kov, Ya. V. Terent'ev, S. A. Tarasenko, A. N. Semenov, S. V. Ivanov, D. R. Yakovlev, T. Wojtowicz, U. Wurstbauer, D. Schuh, S. D. Ganichev

Abstract: We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalen… ▽ More We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field. △ Less

Submitted 27 April, 2012; originally announced April 2012.

Comments: 14 pages, 13 figures

Enlarged magnetic focusing radius of photoinduced ballistic currents

Authors: Markus Stallhofer, Christoph Kastl, Marcel Brändlein, Dieter Schuh, Werner Wegscheider, Jörg. P. Kotthaus, Gerhard Abstreiter, Alexander Holleitner

Abstract: We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The e… ▽ More We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The experimentally determined radius of the trajectories surprisingly exceeds the classical cyclotron value by far. Monte Carlo simulations suggest electron-electron scattering as the underlying reason. △ Less

Submitted 16 January, 2012; originally announced January 2012.

Comments: pdf-file includes both main article and supplementary information

Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

Authors: M. Griesbeck, M. M. Glazov, E. Ya. Sherman, D. Schuh, W. Wegscheider, C. Schüller, T. Korn

Abstract: We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane,… ▽ More We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane, as well as the $g$ factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 K and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed, the SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors. △ Less

Submitted 24 January, 2012; v1 submitted 23 November, 2011; originally announced November 2011.

Comments: 6 pages, 3 figures

Ultrastrong coupling of the cyclotron transition of a two-dimensional electron gas to a THz metamaterial

Authors: Giacomo Scalari, Curdin Maissen, Dana Turcinková, David Hagenmüller, Simone De Liberato, Cristiano Ciuti, Dieter Schuh, Christian Reichl, Werner Wegscheider, Mattias Beck, Jérôme Faist

Abstract: Artificial cavity photon resonators with ultrastrong light-matter interactions are attracting interest both in semiconductor and superconducting systems, due to the possibility of manipulating the cavity quantum electrodynamic ground state with controllable physical properties. We report here experiments showing ultrastrong light-matter coupling in a terahertz metamaterial where the cyclotron tran… ▽ More Artificial cavity photon resonators with ultrastrong light-matter interactions are attracting interest both in semiconductor and superconducting systems, due to the possibility of manipulating the cavity quantum electrodynamic ground state with controllable physical properties. We report here experiments showing ultrastrong light-matter coupling in a terahertz metamaterial where the cyclotron transition of a high mobility two-dimensional electron gas is coupled to the photonic modes of an array of electronic split-ring resonators. We observe a normalized coupling ratio $\fracΩ{ω_c}=0.58$ between the vacuum Rabi frequency $Ω$ and the cyclotron frequency $ω_c$. Our system appears to be scalable in frequency and could be brought to the microwave spectral range with the potential of strongly controlling the magnetotransport properties of a high-mobility 2DEG. △ Less

Submitted 4 May, 2012; v1 submitted 10 November, 2011; originally announced November 2011.

Journal ref: Science. 2012 Mar 16;335(6074):1323-6

Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

Authors: Christian H. Butschkow, Elisabeth Reiger, Stefan Geißler, Andreas Rudolph, Marcello Soda, Dieter Schuh, Georg Woltersdorf, Werner Wegscheider, Dieter Weiss

Abstract: We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along th… ▽ More We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the concept of the effective magnetic field, usually used to describe ferromagnetic resonance phenomena. The nanowires we investigate exhibit a uniaxial anisotropy which is approximately 5 times larger than the strain induced anisotropy observed in lithographically prepared (Ga,Mn)As stripes. △ Less

Submitted 25 October, 2011; originally announced October 2011.

Comments: 18 pages (pre-print), 7 figures, supporting information on last page

Determination of energy scales in few-electron double quantum dots

Authors: D. Taubert, D. Schuh, W. Wegscheider, S. Ludwig

Abstract: The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly… ▽ More The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays. △ Less

Submitted 3 January, 2012; v1 submitted 18 May, 2011; originally announced May 2011.

Comments: 7 pages, 6 figures

Journal ref: Rev. Sci. Instrum. 82, 123905 (2011)

Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems

Authors: R. Völkl, M. Griesbeck, S. A. Tarasenko, D. Schuh, W. Wegscheider, C. Schüller, T. Korn

Abstract: We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical exc… ▽ More We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes. △ Less

Submitted 13 May, 2011; originally announced May 2011.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B, 83, 241306(R) (2011)

Decoherence-assisted initialization of a resident hole spin polarization in a two-dimensional hole gas

Authors: M. Kugler, K. Korzekwa, P. Machnikowski, C. Gradl, S. Furthmeier, M. Griesbeck, M. Hirmer, D. Schuh, W. Wegscheider, T. Kuhn, C. Schüller, T. Korn

Abstract: We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pum** leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, whi… ▽ More We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pum** leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, while low power resonant optical pum** only leads to a resident hole spin polarization if a sufficient in-plane magnetic field is applied. The competition between two different processes of spin orientation strongly modifies the shape of resonant spin amplification traces. Calculations of the spin dynamics in the electron--hole system are in good agreement with the experimental Kerr rotation and resonant spin amplification traces and allow us to determine the hole spin polarization within the sample after optical orientation, as well as to extract quantitative information about spin dephasing processes at various stages of the evolution. △ Less

Submitted 19 January, 2012; v1 submitted 6 May, 2011; originally announced May 2011.

Comments: 10 pages, 6 figures; moderate modifications, one new figure

Journal ref: Phys. Rev. B 84, 085327 (2011)

Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells

Authors: J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, J. Förstner, T. Meier, M. Oestreich

Abstract: We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure h… ▽ More We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure higher order effect that exists as well for diamond type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable to map out the internal -otherwise hidden- symmetries in two dimensional systems. Fourth order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects. △ Less

Submitted 7 April, 2011; originally announced April 2011.

Optical polarization of localized hole spins in p-doped quantum wells

Authors: M. Studer, M. Hirmer, D. Schuh, W. Wegscheider, K. Ensslin, G. Salis

Abstract: The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with… ▽ More The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states. △ Less

Submitted 6 April, 2011; originally announced April 2011.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. B 84, 085328 (2011)

Electron spin relaxation as evidence of excitons in an electron-hole plasma

Authors: S. Oertel, S. Kunz, D. Schuh, W. Wegscheider, J. Hübner, M. Oestreich

Abstract: We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over q… ▽ More We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures. △ Less

Submitted 6 April, 2011; v1 submitted 12 March, 2011; originally announced March 2011.

Magnetoresistance in a High Mobility Two-Dimensional Electron Gas

Authors: L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, R. J. Haug

Abstract: In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the par… ▽ More In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction. △ Less

Submitted 1 December, 2010; originally announced December 2010.

Comments: 4 pages, 4 figures

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Authors: Martin Heiß, Sonia Conesa-Boj, Jun Ren, Hsiang-Han Tseng, Adam Gali, Andreas Rudolph, Emanuele Uccelli, Francesca Peiro, Joan Ramon Morante, Dieter Schuh, Elisabeth Reiger, Efthimios Kaxiras, Jordi Arbiol, Anna Fontcuberta i Morral

Abstract: A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In… ▽ More A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results. △ Less

Submitted 23 November, 2010; originally announced November 2010.