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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Frequency control of single quantum emitters in integrated photonic circuits
Authors:
Emma R. Schmidgall,
Srivatsa Chakravarthi,
Michael Gould,
Ian R. Christen,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect…
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Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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Submitted 23 February, 2018;
originally announced February 2018.
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Accessing the dark exciton spin in deterministic quantum-dot microlenses
Authors:
Tobias Heindel,
Alexander Thoma,
Ido Schwartz,
Emma R. Schmidgall,
Liron Gantz,
Dan Cogan,
Max Strauß,
Peter Schnauber,
Manuel Gschrey,
Jan-Hindrik Schulze,
Andre Strittmatter,
Sven Rodt,
David Gershoni,
Stephan Reitzenstein
Abstract:
The dark exciton state in semiconductor quantum dots constitutes a long-lived solid-state qubit which has the potential to play an important role in implementations of solid-state based quantum information architectures. In this work, we exploit deterministically fabricated QD microlenses with enhanced photon extraction, to optically prepare and readout the dark exciton spin and observe its cohere…
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The dark exciton state in semiconductor quantum dots constitutes a long-lived solid-state qubit which has the potential to play an important role in implementations of solid-state based quantum information architectures. In this work, we exploit deterministically fabricated QD microlenses with enhanced photon extraction, to optically prepare and readout the dark exciton spin and observe its coherent precession. The optical access to the dark exciton is provided via spin-blockaded metastable biexciton states acting as heralding state, which are identified deploying polarization-sensitive spectroscopy as well as time-resolved photon cross-correlation experiments. Our experiments reveal a spin-precession period of the dark exciton of $(0.82\pm0.01)\,$ns corresponding to a fine-structure splitting of $(5.0\pm0.7)\,μ$eV between its eigenstates $\left|\uparrow\Uparrow\pm\downarrow\Downarrow\right\rangle$. By exploiting microlenses deterministically fabricated above pre-selected QDs, our work demonstrates the possibility to scale up implementations of quantum information processing schemes using the QD-confined dark exciton spin qubit, such as the generation of photonic cluster states or the realization of a solid-state-based quantum memory.
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Submitted 4 August, 2017; v1 submitted 16 June, 2017;
originally announced June 2017.
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Van der Waals Engineering of Ferromagnetic Semiconductor Heterostructures for Spin and Valleytronics
Authors:
Ding Zhong,
Kyle L. Seyler,
Xiayu Linpeng,
Ran Cheng,
Nikhil Sivadas,
Bevin Huang,
Emma Schmidgall,
Takashi Taniguchi,
Kenji Watanabe,
Michael A. McGuire,
Wang Yao,
Di Xiao,
Kai-Mei C. Fu,
Xiaodong Xu
Abstract:
The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley ps…
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The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flip** of the CrI3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photo-excited spins in WSe2 and the CrI3 magnetization, due to ultrafast spin-dependent charge hop** across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.
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Submitted 3 April, 2017;
originally announced April 2017.
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Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
Authors:
Bevin Huang,
Genevieve Clark,
Efren Navarro-Moratalla,
Dahlia R. Klein,
Ran Cheng,
Kyle L. Seyler,
Ding Zhong,
Emma Schmidgall,
Michael A. McGuire,
David H. Cobden,
Wang Yao,
Di Xiao,
Pablo Jarillo-Herrero,
Xiaodong Xu
Abstract:
Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semi-metals with edge transport. Despite this pro…
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Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semi-metals with edge transport. Despite this progress, there is still no 2D crystal with intrinsic magnetism, which would be useful for many technologies such as sensing, information, and data storage. Theoretically, magnetic order is prohibited in the 2D isotropic Heisenberg model at finite temperatures by the Mermin-Wagner theorem. However, magnetic anisotropy removes this restriction and enables, for instance, the occurrence of 2D Ising ferromagnetism. Here, we use magneto-optical Kerr effect (MOKE) microscopy to demonstrate that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 K is only slightly lower than the 61 K of the bulk crystal, consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase transition, showcasing the hallmark thickness-dependent physical properties typical of van der Waals crystals. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, while in trilayer the interlayer ferromagnetism observed in the bulk crystal is restored. Our work creates opportunities for studying magnetism by harnessing the unique features of atomically-thin materials, such as electrical control for realizing magnetoelectronics, and van der Waals engineering for novel interface phenomena.
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Submitted 3 April, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
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Selection Rules for Non-Radiative Carrier Relaxation Processes in Semiconductor Quantum Dots
Authors:
E. R. Schmidgall,
Y. Benny,
I. Schwartz,
R. Presman,
L. Gantz,
Y. Don,
D. Gershoni
Abstract:
Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative cascades which include intermediate phonon assisted relaxations. The energy of the first photon reveals the multicarrier configuration prior to the non-radiative re…
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Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative cascades which include intermediate phonon assisted relaxations. The energy of the first photon reveals the multicarrier configuration prior to the non-radiative relaxation, while the energy of the second photon reveals the configuration after the relaxation. The intensity cross correlation measurements thus provide quantitative measures of the non-radiative processes and their selection rules. We construct a model which accurately describes the experimental observations in terms of the electron-phonon and electron-hole exchange interactions. Our measurements and model provide a new tool for engineering relaxation processes in semiconductor nanostructures.
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Submitted 14 June, 2016;
originally announced June 2016.
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Efficient extraction of zero-phonon-line photons from single nitrogen-vacancy centers in an integrated GaP-on-diamond platform
Authors:
Michael Gould,
Emma R. Schmidgall,
Shabnam Dadgostar,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL pho…
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Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL photon into the guided waveguide mode after optical excitation can reach 9%, due to a combination of resonant enhancement of the ZPL emission and efficient coupling between the resonator and waveguide. We verify the single-photon nature of the emission and experimentally demonstrate both high in-waveguide photon numbers and substantial Purcell enhancement for a set of devices. These devices may enable scalable integrated quantum networks based on NV centers.
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Submitted 15 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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Controlling the Dark Exciton Spin Eigenstates by External Magnetic Field
Authors:
L. Gantz,
E. R. Schmidgall,
I. Schwartz,
Y. Don,
E. Waks,
G. Bahir,
D. Gershoni
Abstract:
We study the dark exciton's behavior as a coherent physical two-level spin system (qubit) using an external magnetic field in the Faraday configuration. Our studies are based on polarization-sensitive intensity autocorrelation measurements of the optical transition resulting from the recombination of a spin-blockaded biexciton state, which heralds the dark exciton and its spin state. We demonstrat…
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We study the dark exciton's behavior as a coherent physical two-level spin system (qubit) using an external magnetic field in the Faraday configuration. Our studies are based on polarization-sensitive intensity autocorrelation measurements of the optical transition resulting from the recombination of a spin-blockaded biexciton state, which heralds the dark exciton and its spin state. We demonstrate control over the dark exciton eigenstates without degrading its decoherence time. Our observations agree well with computational predictions based on a master equation model.
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Submitted 18 May, 2016;
originally announced May 2016.
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Generating single photons at GHz modulation-speed using electrically controlled quantum dot microlenses
Authors:
A. Schlehahn,
R. Schmidt,
C. Hopfmann,
J. -H. Schulze,
A. Strittmatter,
T. Heindel,
L. Gantz,
E. R. Schmidgall,
D. Gershoni,
S. Reitzenstein
Abstract:
We report on the generation of single-photon pulse trains at a repetition rate of up to 1 GHz. We achieve this high speed by modulating the external voltage applied on an electrically contacted quantum dot microlens, which is optically excited by a continuous-wave laser. By modulating the photoluminescence of the quantum dot microlens using a square-wave voltage, single-photon emission is triggere…
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We report on the generation of single-photon pulse trains at a repetition rate of up to 1 GHz. We achieve this high speed by modulating the external voltage applied on an electrically contacted quantum dot microlens, which is optically excited by a continuous-wave laser. By modulating the photoluminescence of the quantum dot microlens using a square-wave voltage, single-photon emission is triggered with a response time as short as 270 ps being 6.5 times faster than the radiative lifetime of 1.75 ns. This large reduction in the characteristic emission time is enabled by a rapid capacitive gating of emission from the quantum dot placed in the intrinsic region of a p-i-n-junction biased below the onset of electroluminescence. Here, the rising edge of the applied voltage pulses triggers the emission of single photons from the optically excited quantum dot. The non-classical nature of the photon pulse train generated at GHz-speed is proven by intensity autocorrelation measurements. Our results combine optical excitation with fast electrical gating and thus show promise for the generation of indistinguishable single photons at high rates, exceeding the limitations set by the intrinsic radiative lifetime.
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Submitted 25 October, 2015;
originally announced October 2015.
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Deterministic Coherent Writing of a Long-Lived Semiconductor Spin Qubit Using One Ultrafast Optical Pulse
Authors:
I. Schwartz,
D. Cogan,
E. R. Schmidgall,
L. Gantz,
Y. Don,
M. Zielinski,
D. Gershoni
Abstract:
We use one single, few-picosecond-long, variably polarized laser pulse to deterministically write any selected spin state of a quantum dot confined dark exciton whose life and coherence time are six and five orders of magnitude longer than the laser pulse duration, respectively. The pulse is tuned to an absorption resonance of an excited dark exciton state, which acquires non-negligible oscillator…
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We use one single, few-picosecond-long, variably polarized laser pulse to deterministically write any selected spin state of a quantum dot confined dark exciton whose life and coherence time are six and five orders of magnitude longer than the laser pulse duration, respectively. The pulse is tuned to an absorption resonance of an excited dark exciton state, which acquires non-negligible oscillator strength due to residual mixing with bright exciton states. We obtain a high fidelity one-to-one map** from any point on the Poincaré sphere of the pulse polarization to a corresponding point on the Bloch sphere of the spin of the deterministically photogenerated dark exciton.
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Submitted 23 July, 2015;
originally announced July 2015.
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All-Optical Depletion of Dark Excitons from a Semiconductor Quantum Dot
Authors:
E. R. Schmidgall,
I. Schwartz,
D. Cogan,
L. Gantz,
T. Heindel,
S. Reitzenstein,
D. Gershoni
Abstract:
Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton state…
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Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the DE population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.
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Submitted 28 April, 2015;
originally announced April 2015.
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Determinstic Generation of a Quantum Dot-Confined Triexciton and its Radiative Decay via Three-Photon Cascade
Authors:
E. R. Schmidgall,
I. Schwartz,
L. Gantz,
D. Cogan,
S. Raindel,
D. Gershoni
Abstract:
Semiconductor quantum dots (QDs) have potential applications in quantum information processing due to the fact that they are potential on-demand sources of single and entangled photons. Generation of polarization-entangled photon pairs was demonstrated using the biexciton-exciton radiative cascade. One obvious way to increase the number of quantum correlated photons that the QDs emit is to use hig…
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Semiconductor quantum dots (QDs) have potential applications in quantum information processing due to the fact that they are potential on-demand sources of single and entangled photons. Generation of polarization-entangled photon pairs was demonstrated using the biexciton-exciton radiative cascade. One obvious way to increase the number of quantum correlated photons that the QDs emit is to use higher-order multiexcitons, in particular the triexciton. Towards achieving this goal, we first demonstrate deterministic generation of the QD-confined triexciton in a well-definedcoherent state and then spectrally identify and directly measure a three-photon radiative cascade resulting from the sequential triexciton-biexciton-exciton radiative recombination.
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Submitted 9 December, 2014; v1 submitted 2 December, 2014;
originally announced December 2014.
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Determinisitic Writing and Control of the Dark Exciton Spin using Short Single Optical Pulses
Authors:
I. Schwartz,
E. R. Schmidgall,
L. Gantz,
D. Cogan,
E. Bordo,
Y. Don,
M. Zielinski,
D. Gershoni
Abstract:
We demonstrate that the quantum dot-confined dark exciton forms a long-lived integer spin solid state qubit which can be deterministically on-demand initiated in a pure state by one optical pulse. Moreover, we show that this qubit can be fully controlled using short optical pulses, which are several orders of magnitude shorter than the life and coherence times of the qubit. Our demonstrations do n…
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We demonstrate that the quantum dot-confined dark exciton forms a long-lived integer spin solid state qubit which can be deterministically on-demand initiated in a pure state by one optical pulse. Moreover, we show that this qubit can be fully controlled using short optical pulses, which are several orders of magnitude shorter than the life and coherence times of the qubit. Our demonstrations do not require an externally applied magnetic field and they establish that the quantum dot-confined dark exciton forms an excellent solid state matter qubit with some advantages over the half-integer spin qubits such as the confined electron and hole, separately. Since quantum dots are semiconductor nanostructures that allow integration of electronic and photonic components, the dark exciton may have important implications on implementations of quantum technologies consisting of semiconductor qubits.
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Submitted 9 December, 2014; v1 submitted 12 August, 2014;
originally announced August 2014.
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Quantum state preparation in semiconductor dots by adiabatic rapid passage
Authors:
Yanwen Wu,
I. M. Piper,
M. Ediger,
P. Brereton,
E. R. Schmidgall,
M. Hugues,
M. Hopkinson,
R. T. Phillips
Abstract:
Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flop** in that the method is robust with respect to variation in the optical coupling. We use ad…
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Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flop** in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We demonstrate that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
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Submitted 9 June, 2010; v1 submitted 4 June, 2010;
originally announced June 2010.
