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Anomalous 4$f$ fine structure in TmSe$_{1-x}$Te$_x$ across the metal-insulator transition
Authors:
C. -H. Min,
S. Müller,
W. J. Choi,
L. Dudy,
V. Zabolotny,
M. Heber,
J. D. Denlinger,
C. -J. Kang,
M. Kalläne,
N. Wind,
M. Scholz,
T. L. Lee,
C. Schlueter,
A. Gloskovskii,
E. D. L. Rienks,
V. Hinkov,
H. Bentmann,
Y. S. Kwon,
F. Reinert,
K. Rossnagel
Abstract:
Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence syste…
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Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence systems. We investigate the 4$f$ states in TmSe$_{1-x}$Te$_x$ throughout a semimetal-insulator phase transition, which drastically varies the interactions related to the 4$f$ states. Using synchrotron-based hard x-ray and extreme ultraviolet photoemission spectroscopy, we resolve subtle peak splitting in the 4$f$ peaks near the Fermi level in the mixed-valent semimetal phase. The separation is enhanced by several tens of meV by increasing the lattice parameter by a few percent. Our results elucidate the evolving nature of the 4$f$ state across the phase transition, and provide direct experimental evidence for electronic interactions beyond the standard Anderson model in mixed-valence systems.
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Submitted 4 June, 2024;
originally announced June 2024.
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2D synthetic ferrimagnets by magnetic proximity coupling
Authors:
Paul Rosenberger,
Moumita Kundu,
Andrei Gloskovskii,
Christoph Schlueter,
Ulrich Nowak,
Martina Müller
Abstract:
Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface. For a low-TC rare-earth FM coupled to a 3d transition metal FM, even room temperature magnetism is within reach. In addition, magnetic proximity coupling is pa…
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Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface. For a low-TC rare-earth FM coupled to a 3d transition metal FM, even room temperature magnetism is within reach. In addition, magnetic proximity coupling is particularly promising for increasing the magnetic order of metastable materials such as europium monoxide (EuO) beyond their bulk TC, since neither the stoichiometry nor the insulating properties are modified.
We investigate the magnetic proximity effect at Fe/EuO and Co/EuO interfaces using hard X-ray photoelectron spectroscopy. By exciting the FM layers with circularly polarized light, magnetic dichroism is observed in angular dependence on the photoemission geometry. In this way, the depth-dependence of the magnetic signal is determined element-specifically for the EuO and 3d FM parts of the bilayers. In connection with atomistic spin dynamics simulations, the thickness of EuO layer is found to be crucial, indicating that the observed antiferromagnetic proximity coupling is a short-ranged and genuine interface phenomenon. This fact turns the bilayer into a strong synthetic ferrimagnet. The increase in magnetic order in EuO occurs in a finite spatial range and is therefore particularly strong in the 2D limit-a counterintuitive but very useful phenomenon for spin-based device applications.
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Submitted 19 April, 2024;
originally announced April 2024.
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Ultrafast terahertz field control of the emergent magnetic and electronic interactions at oxide interfaces
Authors:
A. M. Derrico,
M. Basini,
V. Unikandanunni,
J. R. Paudel,
M. Kareev,
M. Terilli,
T. -C. Wu,
A. Alostaz,
C. Klewe,
P. Shafer,
A. Gloskovskii,
C. Schlueter,
C. M. Schneider,
J. Chakhalian,
S. Bonetti,
A. X. Gray
Abstract:
Ultrafast electric-field control of emergent electronic and magnetic states at oxide interfaces offers exciting prospects for the development of new generations of energy-efficient devices. Here, we demonstrate that the electronic structure and emergent ferromagnetic interfacial state in epitaxial LaNiO3/CaMnO3 superlattices can be effectively controlled using intense single-cycle THz electric-fie…
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Ultrafast electric-field control of emergent electronic and magnetic states at oxide interfaces offers exciting prospects for the development of new generations of energy-efficient devices. Here, we demonstrate that the electronic structure and emergent ferromagnetic interfacial state in epitaxial LaNiO3/CaMnO3 superlattices can be effectively controlled using intense single-cycle THz electric-field pulses. We employ a combination of polarization-dependent X-ray absorption spectroscopy with magnetic circular dichroism and X-ray resonant magnetic reflectivity to measure a detailed magneto-optical profile and thickness of the ferromagnetic interfacial layer. Then, we use time-resolved and temperature-dependent magneto-optical Kerr effect, along with transient optical reflectivity and transmissivity measurements, to disentangle multiple correlated electronic and magnetic processes driven by ultrafast high-field (~1 MV/cm) THz pulses. These processes include an initial sub-picosecond electronic response, consistent with non-equilibrium Joule heating; a rapid (~270 fs) demagnetization of the ferromagnetic interfacial layer, driven by THz-field-induced nonequilibrium spin-polarized currents; and subsequent multi-picosecond dynamics, possibly indicative of a change in the magnetic state of the superlattice due to the transfer of spin angular momentum to the lattice. Our findings shed light on the intricate interplay of electronic and magnetic phenomena in this strongly correlated material system, suggesting a promising avenue for efficient control of two-dimensional ferromagnetic states at oxide interfaces using ultrafast electric-field pulses.
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Submitted 6 February, 2024;
originally announced February 2024.
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Multi-Mode Front Lens for Momentum Microscopy: Part II Experiments
Authors:
O. Tkach,
S. Fragkos,
Q. Nguyen,
S. Chernov,
M. Scholz,
N. Wind,
S. Babenkov,
O. Fedchenko,
Y. Lytvynenko,
D. Zimmer,
A. Hloskovskii,
D. Kutnyakhov,
F. Pressacco,
J. Dilling,
L. Bruckmeier,
M. Heber,
F. Scholz,
J. Sobota,
J. Koralek,
N. Sirica,
M. Kallmayer,
M. Hoesch,
C. Schlueter,
L. V. Odnodvorets,
Y. Mairesse
, et al. (4 additional authors not shown)
Abstract:
We have experimentally demonstrated different operating modes for the front lenses of the momentum microscopes described in Part I. Measurements at energies from vacuum UV at a high-harmonic generation (HHG)-based source to the soft and hard X-ray range at a synchrotron facility validated the results of theoretical ray-tracing calculations. The key element is a ring electrode concentric with the e…
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We have experimentally demonstrated different operating modes for the front lenses of the momentum microscopes described in Part I. Measurements at energies from vacuum UV at a high-harmonic generation (HHG)-based source to the soft and hard X-ray range at a synchrotron facility validated the results of theoretical ray-tracing calculations. The key element is a ring electrode concentric with the extractor electrode, which can tailor the field in the gap. First, the gap-lens-assisted extractor mode reduces the field strength at the sample while mitigating image aberrations. This mode gave good results in all spectral ranges. Secondly, by compensating the field at the sample surface with a negative voltage at the ring electrode we can operate in zero-field mode, which is beneficial for operando experiments. Finally, higher negative voltages establish the repeller mode, which removes all slow electrons below a certain kinetic energy to eliminate the primary contribution to the space-charge interaction in pump-probe experiments. The switch from extractor to repeller mode is associated with a reduction in the k-field-of-view (10-20 % at hard-X-ray energies, increasing to ~50% at low energies). Real-space imaging also benefits from the new lens modes as confirmed by ToF-XPEEM imaging with 650 nm resolution.
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Submitted 19 January, 2024; v1 submitted 18 January, 2024;
originally announced January 2024.
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Do**-Induced Electronic and Structural Phase Transition in the Bulk Weyl Semimetal Mo1-xWxTe2
Authors:
O. Fedchenko,
F. K. Diekmann,
P. Russmann,
M. Kallmayer,
L. Odenbreit,
S. M. Souliou,
M. Frachet,
A. Winkelmann,
M. Merz,
S. V. Chernov,
D. Vasilyev,
D. Kutnyakhov,
O. Tkach,
Y. Lytvynenko,
K. Medjanik,
C. Schlueter,
A. Gloskovskii,
T. R. F. Peixoto,
M. Hoesch,
M. Le Tacon,
Y. Mokrousov,
K. Rossnage,
G. Schönhense,
H. -J. Elmers
Abstract:
A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different do** concentrations has been carried out using time-of-flight momentum microscopy (including circular and linear dichroism), X-ray photoelectron spectroscopy (XPS), X-ray photoelectron diffraction (XPD), X-ray diffraction (XRD), angle-resolved Raman spectrosco…
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A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different do** concentrations has been carried out using time-of-flight momentum microscopy (including circular and linear dichroism), X-ray photoelectron spectroscopy (XPS), X-ray photoelectron diffraction (XPD), X-ray diffraction (XRD), angle-resolved Raman spectroscopy, transport measurements, density functional theory (DFT) and Kikuchi pattern calculations. High-resolution angle-resolved photoemission spectroscopy (ARPES) at 20 K reveals surface electronic states, which are indicative of topological Fermi arcs. Their dispersion agrees with the position of Weyl points predicted by DFT calculations based on the experimental crystal structure of our samples determined by XRD. Raman spectroscopy confirms the inversion symmetry breaking for the Td -phase, which is a necessary condition for the emergence of topological states. Transport measurements show that increasing the do** concentration from 2 to 9% leads to an increase in the temperature of the phase transition from 1T` to Td from 230 K to 270 K. Magnetoresistance and longitudinal elastoresistance show significantly increased values in the Td -phase due to stimulated inter-pocket electron backscattering. The results demonstrate the close relationship between electronic properties and elastic deformations in MoTe2.
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Submitted 16 October, 2023;
originally announced October 2023.
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Valence-transition-induced changes of the electronic structure in EuPd$_2$Si$_2$
Authors:
O. Fedchenko,
Y. -J. Song,
O. Tkach,
Y. Lytvynenko,
S. V. Chernov,
A. Gloskovskii,
C. Schlueter,
M. Peters,
K. Kliemt,
C. Krellner,
R. Valentí,
G. Schönhense,
H. J. Elmers
Abstract:
We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd$_2$Si$_2$ for temperatures 25~K $\leq$ T $\leq$ 300~K. At low temperatures we observe a Eu $4f$ valence $v=2.5$, % occupation number $n=6.5$, which decreases to $v=2.1$ for temperatures above the vale…
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We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd$_2$Si$_2$ for temperatures 25~K $\leq$ T $\leq$ 300~K. At low temperatures we observe a Eu $4f$ valence $v=2.5$, % occupation number $n=6.5$, which decreases to $v=2.1$ for temperatures above the valence transition around $T_V \approx 160$~K. The experimental valence numbers resulting from an evaluation of the Eu(III)/Eu(II) $3d$ core levels, are used for calculating band structures using density functional theory. The valence transition significantly changes the band structure as determined by angle-resolved photoemission spectroscopy. In particular, the Eu $5d$ valence bands are shifted to lower binding energies with increasing Eu $4f$ occupancy. To a lesser extent, bands derived from the Si $3p$ and Pd $4d$ orbitals are also affected. This observation suggests a partial charge transfer between Eu and Pd/Si sites. Comparison with {\it ab-initio} theory shows a good agreement with experiment, in particular concerning the unequal band shift with increasing Eu $4f$ occupancy.
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Submitted 10 October, 2023;
originally announced October 2023.
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Control of the asymmetric band structure in Mn2Au by a ferromagnetic driver layer
Authors:
Y. Lytvynenko,
O. Fedchenko,
S. V. Chernov,
S. Babenkov,
D. Vasilyev,
O. Tkach,
A. Gloskovskii,
T. R. F. Peixoto,
C. Schlueter,
V. Grigorev,
M. Filianina,
S. Sobolev,
A. Kleibert,
M. Klaeui,
J. Demsar,
G. Schönhense,
M. Jourdan,
H. J. Elmers
Abstract:
Hard X-ray angle-resolved photoemission spectroscopy reveals the momentum-resolved band structure in an epitaxial Mn2Au(001) film capped by a 2 nm thick ferromagnetic Permalloy layer. By magnetizing the Permalloy cap** layer, the exceptionally strong exchange bias aligns the Neel vector in the Mn2Au(001) film accordingly. Uncompensated interface Mn magnetic moments in Mn2Au were identified as th…
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Hard X-ray angle-resolved photoemission spectroscopy reveals the momentum-resolved band structure in an epitaxial Mn2Au(001) film capped by a 2 nm thick ferromagnetic Permalloy layer. By magnetizing the Permalloy cap** layer, the exceptionally strong exchange bias aligns the Neel vector in the Mn2Au(001) film accordingly. Uncompensated interface Mn magnetic moments in Mn2Au were identified as the origin of the exchange bias using X-ray magnetic circular dichroism in combination with photoelectron emission microscopy. Using time-of-flight momentum microscopy, we measure the asymmetry of the band structure in Mn2Au resulting from the homogeneous orientation of the Neel vector. Comparison with theory shows that the Neel vector, determined by the magnetic moment of the top Mn layer, is antiparallel to the Permalloy magnetization. The experimental results demonstrate that hard X-ray photoemission spectroscopy can measure the band structure of epitaxial layers beneath a metallic cap** layer and corroborate the asymmetric band structure in Mn2Au that was previously inferred only indirectly.
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Submitted 26 June, 2023;
originally announced June 2023.
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Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3
Authors:
Shashank Kumar Ojha,
Sankalpa Hazra,
Surajit Bera,
Sanat Kumar Gogoi,
Prithwijit Mandal,
Jyotirmay Maity,
A. Gloskovskii,
C. Schlueter,
Smarajit Karmakar,
Manish Jain,
Sumilan Banerjee,
Venkatraman Gopalan,
Srimanta Middey
Abstract:
One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of do**. Here, we report on the discovery of glassy electron dynamics deep…
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One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of do**. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO$_3$. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena - a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO$_3$. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.
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Submitted 5 June, 2024; v1 submitted 26 June, 2023;
originally announced June 2023.
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Revealing the bonding nature and electronic structure of early transition metal dihydrides
Authors:
Curran Kalha,
Laura E. Ratcliff,
Giorgio Colombi,
Christoph Schlueter,
Bernard Dam,
Andrei Gloskovskii,
Tien-Lin Lee,
Pardeep K. Thakur,
Prajna Bhatt,
Yujiang Zhu,
Jürg Osterwalder,
Francesco Offi,
Giancarlo Panaccione,
Anna Regoutz
Abstract:
Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understand…
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Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understanding the electronic structure and chemical environment of hydrogen within them remains a key challenge. This work presents a new analytical pathway to explore these aspects in technologically relevant systems using Hard X-ray Photoelectron Spectroscopy (HAXPES) on thin films of two prototypical metal dihydrides: YH$_{2-δ}$ and TiH$_{2-δ}$. By taking advantage of the tunability of synchrotron radiation, a non-destructive depth profile of the chemical states is obtained using core level spectra. Combining experimental valence band spectra collected at varying photon energies with theoretical insights from density functional theory (DFT) calculations, a description of the bonding nature and the role of d versus sp contributions to states near the Fermi energy are provided. Moreover, a reliable determination of the enthalpy of formation is proposed by using experimental values of the energy position of metal s band features close to the Fermi energy in the HAXPES valence band spectra.
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Submitted 25 May, 2023;
originally announced May 2023.
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Direct experimental evidence of tunable charge transfer at the $LaNiO_{3}/CaMnO_{3}$ ferromagnetic interface
Authors:
J. R. Paudel,
M. Terilli,
T. -C. Wu,
J. D. Grassi,
A. M. Derrico,
R. K. Sah,
M. Kareev,
C. Klewe,
P. Shafer,
A. Gloskovskii,
C. Schlueter,
V. N. Strocov,
J. Chakhalian,
A. X. Gray
Abstract:
Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this letter, we utilize a combination of depth-resolved soft X-ray standing-wave and…
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Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this letter, we utilize a combination of depth-resolved soft X-ray standing-wave and hard X-ray photoelectron spectroscopies in conjunction with polarization-dependent X-ray absorption spectroscopy to investigate the effects of the metal-insulator transition in $LaNiO_{3}$ on the electronic and magnetic states at the $LaNiO_{3}/CaMnO_{3}$ interface. We report on a direct observation of the reduced effective valence state of the interfacial Mn cations in the metallic superlattice with an above-critical $LaNiO_{3}$ thickness (6 u.c.) due to the leakage of itinerant Ni 3d $e_{g}$ electrons into the interfacial $CaMnO_{3}$ layer. Conversely, in an insulating superlattice with a below-critical $LaNiO_{3}$ thickness of 2 u.c., a homogeneous effective valence state of Mn is observed throughout the $CaMnO_{3}$ layers due to the blockage of charge transfer across the interface. The ability to switch and tune interfacial charge transfer enables precise control of the emergent ferromagnetic state at the $LaNiO_{3}/CaMnO_{3}$ interface and, thus, has far-reaching consequences on the future strategies for the design of next-generation spintronic devices.
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Submitted 13 April, 2023;
originally announced April 2023.
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Layer-resolved electronic behavior in a Kondo lattice system, CeAgAs2
Authors:
Sawani Datta,
Ram Prakash Pandeya,
Arka Bikash Dey,
A. Gloskovskii,
C. Schlueter,
T. R. F. Peixoto,
Ankita Singh,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We investigate the electronic structure of an antiferromagnetic Kondo lattice system CeAgAs2 employing hard x-ray photoemission spectroscopy. CeAgAs2, an orthorhombic variant of HfCuSi2 structure, exhibits antiferromagnetic ground state, Kondo like resistivity upturn and compensation of magnetic moments at low temperatures. The photoemission spectra obtained at different photon energies suggest te…
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We investigate the electronic structure of an antiferromagnetic Kondo lattice system CeAgAs2 employing hard x-ray photoemission spectroscopy. CeAgAs2, an orthorhombic variant of HfCuSi2 structure, exhibits antiferromagnetic ground state, Kondo like resistivity upturn and compensation of magnetic moments at low temperatures. The photoemission spectra obtained at different photon energies suggest termination of the cleaved surface at cis-trans-As layers. The depth-resolved data show significant surface-bulk differences in the As and Ce core level spectra. The As 2p bulk spectrum shows distinct two peaks corresponding to two different As layers. The peak at higher binding energy correspond to cis-trans-As layers and is weakly hybridized with the adjacent Ce layers. The As layers between Ce and Ag-layers possess close to trivalent configuration due to strong hybridization with the neighboring atoms and the corresponding feature appear at lower binding energy. Ce 3d core level spectra show multiple features reflecting strong Ce-As hybridization and strong correlation. Intense f0 peak is observed in the surface spectrum while it is insignificant in the bulk. In addition, we observe a features at binding energy lower than the well-screened feature indicating the presence of additional interactions. This feature becomes more intense in the bulk spectra suggesting it to be a bulk property. Increase in temperature leads to a spectral weight transfer to higher binding energies in the core level spectra and a depletion of spectral intensity at the Fermi level as expected in a Kondo material. These results reveal interesting surface-bulk differences, complex interplay of intra- and inter-layer covalency, and electron correlation in the electronic structure of this novel Kondo lattice system.
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Submitted 8 April, 2023;
originally announced April 2023.
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Complexity in the hybridization physics revealed by depth-resolved photoemission spectroscopy of single crystalline novel Kondo lattice systems, CeCuX$_2$ (X = As/Sb)
Authors:
Sawani Datta,
Ram Prakash Pandeya,
Arka Bikash Dey,
A. Gloskovskii,
C. Schlueter,
T. R. F. Peixoto,
Ankita Singh,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We investigate the electronic structure of a novel Kondo lattice system CeCuX2 (X = As/Sb) employing high resolution depth-resolved photoemission spectroscopy of high quality single crystalline materials. CeCuSb2 and CeCuAs2 represent different regimes of the Doniach phase diagram exhibiting Kondo-like transport properties and CeCuSb2 is antiferromagnetic (TN ~ 6.9 K) while CeCuAs$_2$ does not sho…
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We investigate the electronic structure of a novel Kondo lattice system CeCuX2 (X = As/Sb) employing high resolution depth-resolved photoemission spectroscopy of high quality single crystalline materials. CeCuSb2 and CeCuAs2 represent different regimes of the Doniach phase diagram exhibiting Kondo-like transport properties and CeCuSb2 is antiferromagnetic (TN ~ 6.9 K) while CeCuAs$_2$ does not show long-range magnetic order down to the lowest temperature studied. In this study, samples were cleaved in ultrahigh vacuum before the photoemission measurements and the spectra at different surface sensitivity establish the pnictogen layer having squarenet structure as the terminated surface which is weakly bound to the other layers. Cu 2p and As 2p spectra show spin-orbit split sharp peaks along with features due to plasmon excitations. Ce 3d spectra exhibit multiple features due to the hybridization of the Ce 4f/5d states with the valence states. While overall lineshape of the bulk spectral functions look similar in both the cases, the surface spectra are very different; the surface-bulk difference is significantly weaker in CeCuAs2 compared to that observed in CeCuSb2. A distinct low binding energy peak is observed in the Ce 3d spectra akin to the scenario observed in cuprates and manganites due to the Zhang-Rice singlets and/or high degree of itineracy of the conduction holes. The valence band spectra of CeCuSb$_2$ manifest highly metallic phase. In CeCuAs2, intensity at the Fermi level is significantly small suggesting a pseudogap-type behavior. These results bring out an interesting scenario emphasizing the importance and subtlety of hybridization physics underlying the exoticity of this novel Kondo system.
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Submitted 8 April, 2023;
originally announced April 2023.
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Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy
Authors:
Moritz Hoesch,
Olena Fedchenko,
Mao Wang,
Christoph Schlueter,
Dmitrii Potorochin,
Katerina Medjanik,
Sergey Babenkov,
Anca S. Ciobanu,
Aimo Winkelmann,
Hans-Joachim Elmers,
Shengqiang Zhou,
Manfred Helm,
Gerd Schönhense
Abstract:
Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distingui…
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Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expectations. For multi-Te configurations the results contribute to understanding the exceptional activation of free charge carriers in hyperdo** of chalcogens in silicon.
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Submitted 23 June, 2023; v1 submitted 23 March, 2023;
originally announced March 2023.
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Modulation-Do** a Correlated Electron Insulator
Authors:
Debasish Mondal,
Smruti Rekha Mahapatra,
Abigail M Derrico,
Rajeev Kumar Rai,
Jay R Paudel,
Christoph Schlueter,
Andrei Gloskovskii,
Rajdeep Banerjee,
Frank M F DeGroot,
Dipankar D Sarma,
Awadhesh Narayan,
Pavan Nukala,
Alexander X Gray,
Naga Phani B Aetukuri
Abstract:
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modu…
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Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at do** concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-do** as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.
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Submitted 7 January, 2023;
originally announced January 2023.
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Experimental benchmark data for Monte Carlo simulated radiation effects of gold nanoparticles. Part I: Experiment and raw data analysis
Authors:
Hans Rabus,
Philine Hepperle,
Christoph Schlueter,
Andrei Hloskovsky,
Woon Yong Baek
Abstract:
Electron emission spectra of gold nanoparticles (AuNPs) after photon interaction were measured over the energy range between 50 eV and 9500 eV to provide reference data for Monte Carlo radiation-transport simulations. Experiments were performed with the HAXPES spectrometer at the PETRA III high-brilliance beamline P22 at DESY (Hamburg, Germany) for photon energies below and above each of the gold…
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Electron emission spectra of gold nanoparticles (AuNPs) after photon interaction were measured over the energy range between 50 eV and 9500 eV to provide reference data for Monte Carlo radiation-transport simulations. Experiments were performed with the HAXPES spectrometer at the PETRA III high-brilliance beamline P22 at DESY (Hamburg, Germany) for photon energies below and above each of the gold L-edges, i.e., at 11.9 keV, 12.0 keV, 13.7 keV, 13.8 keV, 14.3 keV, and 14.4 keV. The study focused on a sample with gold nanoparticles with an average diameter of 11.0 nm on a thin carbon foil. Additional measurements were performed on a sample with 5.3 nm gold nanoparticles and on reference samples of gold and carbon foils. Further measurements were made to calibrate the photon flux monitor, to characterize the transmission function of the electron spectrometer and to determine the size of the photon beam. This allowed the determination of the absolute values of the spectral particle radiance of secondary electrons per incident photon flux. The paper presents the experimental and raw data analysis procedures, reviews the data obtained for the nanoparticle samples and discusses their limitations.
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Submitted 9 April, 2023; v1 submitted 9 December, 2022;
originally announced December 2022.
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Clam** effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)
Authors:
Sebastian Kölsch,
Alfons Schuck,
Olena Fedchenko,
Dmitry Vasilyev,
Sergeij Chernov,
Lena Tkach,
Christoph Schlüter,
Thiago R. F. Peixoto,
Andrii Gloskowski,
Hans-Joachim Elmers,
Gerd Schönhense,
Cornelius Krellner,
Michael Huth
Abstract:
Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray…
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Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.
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Submitted 31 August, 2022;
originally announced August 2022.
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Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams
Authors:
O. Romanyuk,
A. Paszuk,
I. Gordeev,
R. G. Wilks,
S. Ueda,
C. Hartmann,
R. Félix,
M. Bär,
C. Schlueter,
A. Gloskovskii,
I. Bartoš,
M. Nandy,
J. Houdková,
P. Jiříček,
W. Jaegermann,
J. P. Hofmann,
T. Hannappel
Abstract:
The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with arsenic is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this…
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The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with arsenic is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4-50 nm thick GaP epitaxial films were grown on As-terminated Si(100) substrates with different types of do**, miscuts, and As-surface termination by metalorganic vapor phase epitaxy. The GaP(As)/Si(100) heterostructures were investigated by X-ray photoelectron spectroscopy (XPS) combined with gas cluster ion beam (GCIB) sputtering and by hard X-ray photoelectron spectroscopy (HAXPES). We found residuals of arsenic atoms in the GaP lattice (0.2-0.3 at.%) and a localization of As atoms at the GaP(As)/Si(100) interface (1 at.%). Deconvolution of core level peaks revealed interface core level shifts. In As core levels, chemical shifts between 0.5-0.8 eV were measured and identified by angle-resolved XPS measurements. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the do** type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the heterostructure was deduced.
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Submitted 17 June, 2022;
originally announced June 2022.
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Tackling Disorder in $γ$-Ga$_2$O$_3$
Authors:
Laura E. Ratcliff,
Takayoshi Oshima,
Felix Nippert,
Benjamin M. Janzen,
Elias Kluth,
Rüdiger Goldhahn,
Martin Feneberg,
Piero Mazzolini,
Oliver Bierwagen,
Charlotte Wouters,
Musbah Nofal,
Martin Albrecht,
Jack E. N. Swallow,
Leanne A. H. Jones,
Pardeep K. Thakur,
Tien-Lin Lee,
Curran Kalha,
Christoph Schlueter,
Tim D. Veal,
Joel B. Varley,
Markus R. Wagner,
Anna Regoutz
Abstract:
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent…
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Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby develo** a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.
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Submitted 9 May, 2022;
originally announced May 2022.
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Giant spectral renormalization and complex hybridization physics in a Kondo lattice system, CeCuSb2
Authors:
Sawani Datta,
Ram Prakash Pandeya,
Arka Bikash Dey,
A. Gloskovskii,
C. Schlueter,
Thiago Peixoto,
Ankita Singh,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We investigate the electronic structure of a Kondo lattice system, CeCuSb2 exhibiting significant mass enhancement and Kondo-type behavior. We observe multiple features in the hard x-ray photoemission spectra of Ce core levels due to strong final-state effects. The depth-resolved data exhibit a significant change in relative intensity of the features with the surface sensitivity of the probe. The…
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We investigate the electronic structure of a Kondo lattice system, CeCuSb2 exhibiting significant mass enhancement and Kondo-type behavior. We observe multiple features in the hard x-ray photoemission spectra of Ce core levels due to strong final-state effects. The depth-resolved data exhibit a significant change in relative intensity of the features with the surface sensitivity of the probe. The extracted surface and bulk spectral functions are different and exhibit a Kondo-like feature at higher binding energies in addition to the well and poorly screened features. The core-level spectra of Sb exhibit huge and complex changes as a function of the surface sensitivity of the technique. The analysis of the experimental data suggests that the two non-equivalent Sb sites possess different electronic structures and in each category, the Sb layers close to the surface are different from the bulk ones. An increase in temperature influences the Ce-Sb hybridization significantly. The plasmon-excitation-induced loss features are also observed in all core level spectra. All these results reveal the importance of Ce-Sb hybridizations and indicate that the complex renormalization of Ce-Sb hybridization may be the reason for the exotic electronic properties of this system.
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Submitted 23 April, 2022;
originally announced April 2022.
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Hard x-ray angle-resolved photoemission from a buried high-mobility electron system
Authors:
Michael Zapf,
Matthias Schmitt,
Judith Gabel,
Philipp Scheiderer,
Martin Stübinger,
Berengar Leikert,
Giorgio Sangiovanni,
Lenart Dudy,
Sergii Chernov,
Sergey Babenkov,
Dmitry Vasilyev,
Olena Fedchenko,
Katerina Medjanik,
Yury Matveyev,
Andrei Gloskowski,
Christoph Schlueter,
Tien-Lin Lee,
Hans-Joachim Elmers,
Gerd Schönhense,
Michael Sing,
Ralph Claessen
Abstract:
Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by…
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Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.
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Submitted 20 September, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
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Emergence of well screened states in a superconducting material of the CaFe$_2$As$_2$ family
Authors:
Ram Prakash Pandeya,
Anup Pradhan Sakhya,
Sawani Datta,
Tanusree Saha,
Giovanni De Ninno,
Rajib Mondal,
C. Schlueter,
A. Gloskovskii,
Paolo Moras,
Matteo Jugovac,
Carlo Carbone,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
Coupling among conduction electrons (e.g. Zhang-Rice singlet) are often manifested in the core level spectra of exotic materials such as cuprate superconductors, manganites, etc. These states are believed to play key roles in the ground state properties and appear as low binding energy features. To explore such possibilities in the Fe-based systems, we study the core level spectra of a superconduc…
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Coupling among conduction electrons (e.g. Zhang-Rice singlet) are often manifested in the core level spectra of exotic materials such as cuprate superconductors, manganites, etc. These states are believed to play key roles in the ground state properties and appear as low binding energy features. To explore such possibilities in the Fe-based systems, we study the core level spectra of a superconductor, CaFe$_{1.9}$Co$_{0.1}$As$_2$ (CaCo122) in the CaFe$_2$As$_2$ (Ca122) family employing high-resolution hard $x$-ray photoemission spectroscopy. While As core levels show almost no change with do** and cooling, Ca 2$p$ peak of CaCo122 show reduced surface contribution relative to Ca122 and a gradual shift of the peak position towards lower binding energies with cooling. In addition, we discover emergence of a feature at lower binding energy side of the well screened Fe 2$p$ signal in CaCo122. The intensity of this feature grows with cooling and indicate additional channels to screen the core holes. The evolution of this feature in the superconducting composition and it's absence in the parent compound suggests relevance of the underlying interactions in the ground state properties of this class of materials. These results reveal a new dimension in the studies of Fe-based superconductors and the importance of such states in the unconventional superconductivity in general.
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Submitted 25 September, 2021;
originally announced September 2021.
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Time-resolved diffraction and photoelectron spectroscopy investigation of the reactive molecular beam epitaxy of $\mathrm{Fe_3O_4}$ ultrathin films
Authors:
Tobias Pohlmann,
Martin Hoppe,
Jannis Thien,
Arka Bikash Dey,
Andreas Alexander,
Kevin Ruwisch,
Olof Gutowski,
Jan Röh,
Andrei Gloskovskii,
Christoph Schlueter,
Karsten Küpper,
Joachim Wollschläger,
Florian Bertram
Abstract:
We present time-resolved high energy x-ray diffraction (tr-HEXRD), time-resolved hard x-ray photoelectron spectroscopy (tr-HAXPES) and time-resolved grazing incidence small angle x-ray scattering (tr-GISAXS) data of the reactive molecular beam epitaxy (RMBE) of $\mathrm{Fe_3O_4}$ ultrathin films on various substrates. Reciprocal space maps are recorded during the deposition of $\mathrm{Fe_3O_4}$ o…
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We present time-resolved high energy x-ray diffraction (tr-HEXRD), time-resolved hard x-ray photoelectron spectroscopy (tr-HAXPES) and time-resolved grazing incidence small angle x-ray scattering (tr-GISAXS) data of the reactive molecular beam epitaxy (RMBE) of $\mathrm{Fe_3O_4}$ ultrathin films on various substrates. Reciprocal space maps are recorded during the deposition of $\mathrm{Fe_3O_4}$ on $\mathrm{SrTiO_3(001)}$, MgO(001) and NiO/MgO(001) in order to observe the temporal evolution of Bragg reflections sensitive to the octahedral and tetrahedral sublattices of the inverse spinel structure of $\mathrm{Fe_3O_4}$. A time delay between the appearance of rock salt and spinel-exclusive reflections reveals that first, the iron oxide film grows with $\mathrm{Fe_{1-δ}O}$ rock salt structure with exclusive occupation of octahedral lattice sites. When this film is 1.1$\,$nm thick, the further growth of the iron oxide film proceeds in the inverse spinel structure, with both octahedral and tetrahedral lattice sites being occupied. In addition, iron oxide on $\mathrm{SrTiO_3(001)}$ initially grows with none of these structures. Here, the formation of the rock salt structure starts when the film is 1.5$\,$nm thick. This is confirmed by tr-HAXPES data obtained during growth of iron oxide on $\mathrm{SrTiO_3(001)}$, which demonstrate an excess of $\mathrm{Fe^{2+}}$ cations in growing films thinner than 3.2$\,$nm. This rock salt phase only appears during growth and vanishes after the supply of the Fe molecular beam is stopped. Thus, it can be concluded the rock salt structure of the interlayer is a property of the dynamic growth process. The tr-GISAXS data link these structural results to an island growth mode of the first 2-3$\,$nm on both MgO(001) and $\mathrm{SrTiO_3(001)}$ substrates.
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Submitted 24 June, 2021;
originally announced June 2021.
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The Breakdown of Mott Physics at VO$_2$ Surfaces
Authors:
Matthew J. Wahila,
Nicholas F. Quackenbush,
Jerzy T. Sadowski,
Jon-Olaf Krisponeit,
Jan Ingo Flege,
Richard Tran,
Shyue ** Ong,
Christoph Schlueter,
Tien-Lin Lee,
Megan E. Holtz,
David A. Muller,
Hanjong Paik,
Darrell G. Schlom,
Wei-Cheng Lee,
Louis F. J. Piper
Abstract:
Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Usin…
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Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Using synchrotron-based x-ray spectroscopy, low energy electron diffraction (LEED), low energy electron microscopy (LEEM), transmission electron microscopy (TEM), and several other experimental techniques, we show that suppression of the bulk structural transition is a common feature at VO$_2$ surfaces. Our density functional theory (DFT) calculations further suggest that this is due to inherent reconstructions necessary to stabilize the surface, which deviate the electronic structure away from the bulk d$^1$ configuration. Our findings have broader ramifications not only for the characterization of other "Mott-like" MITs, but also for any potential device applications of such materials.
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Submitted 9 December, 2020;
originally announced December 2020.
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Impact of Fe substitution on the electronic structure of URu$_2$Si$_2$
Authors:
Martin Sundermann,
Andrea Amorese,
Daisuke Takegami,
Hlynur Gretarsson,
Hasan Yavaş,
Andrei Gloskovskii,
Christoph Schlueter,
Sheng Ran,
M. Brian Maple,
Peter Thalmeier,
Liu Hao Tjeng,
Andrea Severing
Abstract:
The application of pressure as well as the successive substitution of Ru with Fe in the hidden order (HO) compound URu$_2$Si$_2$ leads to the formation of the large moment antiferromagnetic phase (LMAFM). Here we have investigated the substitution series URu$_{2-x}$Fe$_x$Si$_2$ with $x$ = 0.2 and 0.3 with non-resonant inelastic x-ray scattering (NIXS) and 4$f$ core-level photoelectron spectroscopy…
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The application of pressure as well as the successive substitution of Ru with Fe in the hidden order (HO) compound URu$_2$Si$_2$ leads to the formation of the large moment antiferromagnetic phase (LMAFM). Here we have investigated the substitution series URu$_{2-x}$Fe$_x$Si$_2$ with $x$ = 0.2 and 0.3 with non-resonant inelastic x-ray scattering (NIXS) and 4$f$ core-level photoelectron spectroscopy with hard x-rays (HAXPES). NIXS shows that the substitution of Fe has no impact on the symmetry of the ground-state wave function. In HAXPES we find no shift of spectral weight that would be indicative for a change of the 5$f$-electron count. Consequently, changes in the exchange interaction $\cal{J}$ due to substitution must be minor so that the conjecture of chemical pressure seems unlikely. An alternative scenario is discussed, namely the formation of long range magnetic order due the substitution induced local enhancement of the magnetization in the vicinity of the $f$-electron ions while the overall electronic structure remains unchanged.
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Submitted 8 May, 2020;
originally announced May 2020.
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Dual nature of 5$f$ electrons in the isostructural UM$_2$Si$_2$ family: from antiferro- to Pauli paramagnetism via hidden order
Authors:
Andrea Amorese,
Martin Sundermann,
Brett Leedahl,
Andrea Marino,
Daisuke Takegami,
Hlynur Gretarsson,
Andrei Hloskovsky,
Christoph Schlüter,
Maurits W. Haverkort,
Yingkai Huang,
Maria Szlawska,
Dariusz Kaczorowski,
Sheng Ran,
M. Brian Maple,
Eric D. Bauer,
Andreas Leithe-Jasper,
Peter Thalmeier,
Liu Hao Tjeng,
Andrea Severing
Abstract:
Using inelastic x-ray scattering beyond the dipole limit and hard x-ray photoelectron spectroscopy we establish the dual nature of the U $5f$ electrons in UM$_2$Si$_2$ (M = Pd, Ni, Ru, Fe), regardless of their degree of delocalization. We have observed that the compounds have in common a local atomic-like state that is well described by the U $5f^2$ configuration with the $Γ_1^{(1)}$ and $Γ_2$ qua…
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Using inelastic x-ray scattering beyond the dipole limit and hard x-ray photoelectron spectroscopy we establish the dual nature of the U $5f$ electrons in UM$_2$Si$_2$ (M = Pd, Ni, Ru, Fe), regardless of their degree of delocalization. We have observed that the compounds have in common a local atomic-like state that is well described by the U $5f^2$ configuration with the $Γ_1^{(1)}$ and $Γ_2$ quasi-doublet symmetry. The amount of the U 5$f^3$ configuration, however, varies considerably across the UM$_2$Si$_2$ series, indicating an increase of U5$f$ itineracy in going from M=Pd to Ni to Ru, and to the Fe compound. The identified electronic states explain the formation of the very large ordered magnetic moments in UPd$_2$Si$_2$ and UNi$_2$Si$_2$, the availability of orbital degrees of freedom needed for the hidden order in URu$_2$Si$_2$ to occur, as well as the appearance of Pauli paramagnetism in UFe$_2$Si$_2$. A unified and systematic picture of the U$M_2$Si$_2$ compounds may now be drawn, thereby providing suggestions for new experiments to induce hidden order and/or superconductivity in U compounds with the tetragonal body-centered ThCr$_2$Si$_2$ structure.
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Submitted 15 December, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering
Authors:
Georgios Araizi-Kanoutas,
Jaap Geessinck,
Nicolas Gauquelin,
Steef Smit,
Xanthe Verbeek,
Shrawan K. Mishra,
Peter Bencok,
Christoph Schlueter,
Tien-Lin Lee,
Dileep Krishnan,
Jo Verbeeck,
Guus Rijnders,
Gertjan Koster,
Mark S. Golden
Abstract:
We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation…
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We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation of the magnetic properties. The experiments prove a deterministically-tunable charge transfer process acting in the LaCoO3 within three unit cells of the heterointerface, able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3 / LaCoO3 interfaces, the thickness of an additional "break" layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in tri-layers provide a trio of sensitive control knobs for the charge transfer process, illustrating the efficacy of O2p-band alignment as a guiding principle for property design in complex oxide heterointerfaces.
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Submitted 11 September, 2019;
originally announced September 2019.
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Transient quantum isolation and critical behavior in the magnetization dynamics of half-metallic manganites
Authors:
Tommaso Pincelli,
Riccardo Cucini,
Adriano Verna,
Francesco Borgatti,
Masaki Oura,
Kenji Tamasaku,
Tien-lin Lee,
Christoph Schlueter,
Stefan Günther,
Christian Horst Back,
Martina Dell'Angela,
Roberta Ciprian,
Pasquale Orgiani,
Aleksandr Petrov,
Fausto Sirotti,
Valentin Dediu,
Ilaria Bergenti,
Patrizio Graziosi,
Fabio Miletto Granozio,
Yoshihito Tanaka,
Munetaka Taguchi,
Hiroshi Daimon,
Jun Fujii,
Giorgio Rossi,
Giancarlo Panaccione
Abstract:
We combine time resolved pump-probe Magneto-Optical Kerr Effect and Photoelectron Spectroscopy experiments supported by theoretical analysis to determine the relaxation dynamics of delocalized electrons in half-metallic ferromagnetic manganite $La_{1-x}Sr_{x}MnO_{3}$. We observe that the half-metallic character of $La_{1-x}Sr_{x}MnO_{3}$ determines the timescale of both the electronic phase transi…
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We combine time resolved pump-probe Magneto-Optical Kerr Effect and Photoelectron Spectroscopy experiments supported by theoretical analysis to determine the relaxation dynamics of delocalized electrons in half-metallic ferromagnetic manganite $La_{1-x}Sr_{x}MnO_{3}$. We observe that the half-metallic character of $La_{1-x}Sr_{x}MnO_{3}$ determines the timescale of both the electronic phase transition and the quenching of magnetization, revealing a quantum isolation of the spin system in double exchange ferromagnets extending up to hundreds of picoseconds. We demonstrate the use of time-resolved hard X-ray photoelectron spectroscopy (TR-HAXPES) as a unique tool to single out the evolution of strongly correlated electronic states across a second-order phase transition in a complex material.
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Submitted 1 June, 2019;
originally announced June 2019.
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Breakthrough in HAXPES Performance Combining Full-Field k-Imaging with Time-of-Flight Recording
Authors:
K. Medjanik,
S. V. Babenkov,
S. Chernov,
D. Vasilyev,
H. J. Elmers,
B. Schoenhense,
C. Schlueter,
A. Gloskowskii,
Yu. Matveyev,
W. Drube,
G. Schoenhense
Abstract:
We established a new approach to hard-X-ray photoelectron spectroscopy (HAXPES). The instrumental key feature is an increase of the dimensionality of the recording scheme from 2D to 3D. A high-energy momentum microscope can detect electrons with initial kinetic energies more than 6 keV with high angular resolution < 0.1°. The large k-space acceptance of the special objective lens allows for simult…
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We established a new approach to hard-X-ray photoelectron spectroscopy (HAXPES). The instrumental key feature is an increase of the dimensionality of the recording scheme from 2D to 3D. A high-energy momentum microscope can detect electrons with initial kinetic energies more than 6 keV with high angular resolution < 0.1°. The large k-space acceptance of the special objective lens allows for simultaneous full-field imaging of many Brillouin zones. Combined with time-of-flight parallel energy recording, this method yields maximum parallelization of data acquisition. In a pilot experiment at the new beamline P22 at PETRA III, Hamburg, count rates of more than $10^{6}$ counts per second in the d-band complex of transition metals established an unprecedented HAXPES recording speed. It was found that the concept of tomographic k-space map** previously demonstrated in the soft X-ray regime works equally well in the hard X-ray range. Sharp valence band k-patterns of Re collected at an excitation energy of 6 keV correspond to direct transitions to the 28th repeated Brillouin zone. Given the high X-ray brilliance (1.1x$10^{13}$ hv/s in a spot of less than 20x15 $mu^{2}$), the 3D bulk Brillouin zone can be mapped in a few hours. X-ray photoelectron diffraction (XPD) patterns with < 0.1° resolution are recorded within minutes. Previously unobserved fine details in the diffractograms reflect the large number of scatterers, several $10^{4}$ to $10^{6}$, depending on energy. The short photoelectron wavelength (an order of magnitude smaller than the interatomic distance) amplifies phase differences and makes hard X-ray XPD with high resolution a very sensitive structural tool. The high count rates pave the way towards spin-resolved HAXPES using an imaging spin filter.
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Submitted 26 October, 2018;
originally announced October 2018.
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Tailoring Materials for Mottronics: Excess Oxygen Do** of a Prototypical Mott Insulator
Authors:
Philipp Scheiderer,
Matthias Schmitt,
Judith Gabel,
Martin Stübinger,
Philipp Schütz,
Lenart Dudy,
Christoph Schlueter,
Tien-Lin Lee,
Michael Sing,
Ralph Claessen
Abstract:
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the met…
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The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating.
Here we demonstrate that thin films of the prototypical Mott insulator LaTiO$_3$ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen do** across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and cap** layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions, making LaTiO$_{3+x}$ a promising functional material for Mottronics devices.
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Submitted 16 July, 2018;
originally announced July 2018.
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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
Authors:
Slavomír Nemšák,
Mathias Gehlmann,
Cheng-Tai Kuo,
Shih-Chieh Lin,
Christoph Schlueter,
Ewa Mlynczak,
Tien-Lin Lee,
Lukasz Plucinski,
Hubert Ebert,
Igor Di Marco,
Ján Minár,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal do** produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5%…
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The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal do** produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
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Submitted 12 September, 2018; v1 submitted 19 January, 2018;
originally announced January 2018.
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Electronic structure of the candidate 2D Dirac semimetal SrMnSb2: a combined experimental and theoretical study
Authors:
S. V. Ramankutty,
J. Henke,
A. Schiphorst,
R. Nutakki,
S. Bron,
G. Araizi-Kanoutas,
S. K. Mishra,
Lei Li,
Y. K. Huang,
T. K. Kim,
M. Hoesch,
C. Schlueter,
T. -L. Lee,
A. de Visser,
Zhicheng Zhong,
Jasper van Wezel,
E. van Heumen,
M. S. Golden
Abstract:
SrMnSb$_2$ is suggested to be a magnetic topological semimetal. It contains square, 2D Sb planes with non-symmorphic crystal symmetries that could protect band crossings, offering the possibility of a quasi-2D, robust Dirac semi-metal in the form of a stable, bulk (3D) crystal. Here, we report a combined and comprehensive experimental and theoretical investigation of the electronic structure of Sr…
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SrMnSb$_2$ is suggested to be a magnetic topological semimetal. It contains square, 2D Sb planes with non-symmorphic crystal symmetries that could protect band crossings, offering the possibility of a quasi-2D, robust Dirac semi-metal in the form of a stable, bulk (3D) crystal. Here, we report a combined and comprehensive experimental and theoretical investigation of the electronic structure of SrMnSb$_2$, including the first ARPES data on this compound. SrMnSb$_2$ possesses a small Fermi surface originating from highly 2D, sharp and linearly dispersing bands (the Y-states) around the (0,$π$/a)-point in $k$-space. The ARPES Fermi surface agrees perfectly with that from bulk-sensitive Shubnikov de Haas data from the same crystals, proving the Y$-$states to be responsible for electrical conductivity in SrMnSb$_2$. DFT and tight binding (TB) methods are used to model the electronic states, and both show good agreement with the ARPES data. Despite the great promise of the latter, both theory approaches show the Y-states to be gapped above E$_F$, suggesting trivial topology. Subsequent analysis within both theory approaches shows the Berry phase to be zero, indicating the non-topological character of the transport in SrMnSb$_2$, a conclusion backed up by the analysis of the quantum oscillation data from our crystals.
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Submitted 21 January, 2018; v1 submitted 20 November, 2017;
originally announced November 2017.
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Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
Authors:
P. Schütz,
D. V. Christensen,
V. Borisov,
F. Pfaff,
P. Scheiderer,
L. Dudy,
M. Zapf,
J. Gabel,
Y. Z. Chen,
N. Pryds,
V. A. Rogalev,
V. N. Strocov,
C. Schlueter,
T. -L. Lee,
H. O. Jeschke,
R. Valentí,
M. Sing,
R. Claessen
Abstract:
The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy…
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The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures.
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Submitted 16 October, 2017;
originally announced October 2017.
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Tuning a Strain-Induced Orbital Selective Mott Transition in Epitaxial VO$_2$
Authors:
Shantanu Mukherjee,
N. F. Quackenbush,
H. Paik,
C. Schlueter,
T. -L. Lee,
D. G. Schlom,
L. F. J. Piper,
Wei-Cheng Lee
Abstract:
We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood b…
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We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_α$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_α = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.
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Submitted 8 March, 2016; v1 submitted 1 March, 2016;
originally announced March 2016.
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Interface reconstruction in superconducting CaCuO2/SrTiO3 superlattices: A hard x-ray photoelectron spectroscopy study
Authors:
Carmela Aruta,
Christoph Schlueter,
Tien-Lin Lee,
Daniele Di Castro,
Davide Innocenti,
Antonello Tebano,
Jorg Zegenhagen,
Giuseppe Balestrino
Abstract:
Here we report about the interface reconstruction in the recently discovered superconducting artificial superlattices based on insulating CaCuO2 and SrTiO3 blocks. Hard x-ray photoelectron spectroscopy shows that the valence bands alignment prevents any electronic reconstruction by direct charge transfer between the two blocks. We demonstrate that the electrostatic built-in potential is suppressed…
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Here we report about the interface reconstruction in the recently discovered superconducting artificial superlattices based on insulating CaCuO2 and SrTiO3 blocks. Hard x-ray photoelectron spectroscopy shows that the valence bands alignment prevents any electronic reconstruction by direct charge transfer between the two blocks. We demonstrate that the electrostatic built-in potential is suppressed by oxygen redistribution in the alkaline earth interface planes. By using highly oxidizing growth conditions, the oxygen coordination in the reconstructed interfaces may be increased, resulting in the hole do** of the cuprate block and thus in the appearance of superconductivity.
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Submitted 18 February, 2013;
originally announced February 2013.
