Showing 1–50 of 137 results for author: Schlom, D

Non-volatile spin transport in a single domain multiferroic

Authors: Sajid Husain, Isaac Harris, Peter Meisenheimer, Sukriti Mantri, Xinyan Li, Maya Ramesh, Piush Behera, Hossein Taghinejad, Jaegyu Kim, Pravin Kavle, Shiyu Zhou, Tae Yeon Kim, Hongrui Zhang, Paul Stephenson, James G. Analytis, Darrell Schlom, Sayeef Salahuddin, Jorge Íñiguez-González, Bin Xu, Lane W. Martin, Lucas Caretta, Yimo Han, Laurent Bellaiche, Zhi Yao, Ramamoorthy Ramesh

Abstract: Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO$_3$ the coupling between antiferromagnetic and polar order imposes yet another boun… ▽ More Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO$_3$ the coupling between antiferromagnetic and polar order imposes yet another boundary condition on spin transport. Thus, understanding the fundamentals of spin transport in such systems requires a single domain, a single crystal. We show that through Lanthanum(La) substitution, a single ferroelectric domain can be engineered with a stable, single-variant spin cycloid, controllable by an electric field. The spin transport in such a single domain displays a strong anisotropy, arising from the underlying spin cycloid lattice. Our work shows a pathway to understand the fundamental origins of spin transport in such a single domain multiferroic. △ Less

Submitted 6 April, 2024; originally announced April 2024.

Comments: 15 pages, 9 figure

Local magnetic response of superconducting Sr$\mathrm{_2}$RuO$\mathrm{_4}$ thin films and rings

Authors: G. M. Ferguson, Hari P. Nair, Nathaniel J. Schreiber, Ludi Miao, Kyle M. Shen, Darrell G. Schlom, Katja C. Nowack

Abstract: We conduct local magnetic measurements on superconducting thin-film samples of Sr$\mathrm{_2}$RuO$\mathrm{_4}$ using scanning Superconducting Quantum Interference Device (SQUID) susceptometry. From the diamagnetic response, we extract the magnetic penetration depth, $λ$, which exhibits a quadratic temperature dependence at low temperatures. Although a quadratic dependence in high-purity bulk sampl… ▽ More We conduct local magnetic measurements on superconducting thin-film samples of Sr$\mathrm{_2}$RuO$\mathrm{_4}$ using scanning Superconducting Quantum Interference Device (SQUID) susceptometry. From the diamagnetic response, we extract the magnetic penetration depth, $λ$, which exhibits a quadratic temperature dependence at low temperatures. Although a quadratic dependence in high-purity bulk samples has been attributed to non-local electrodynamics, our analysis suggests that in our thin-film samples the presence of scattering is the origin of the quadratic dependence. While we observe micron-scale variations in the diamagnetic response and superconducting transition temperature, the form of the temperature dependence of $λ$ is independent of position. Finally, we characterize flux trap** in superconducting rings lithographically fabricated from the thin films, paving the way to systematic device-based tests of the superconducting order parameter in Sr$\mathrm{_2}$RuO$\mathrm{_4}$. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Controllable suppression of the unconventional superconductivity in bulk and thin-film Sr$_{2}$RuO$_{4}$ via high-energy electron irradiation

Authors: Jacob P. Ruf, Hilary M. L. Noad, Romain Grasset, Ludi Miao, Elina Zhakina, Philippa H. McGuinness, Hari P. Nair, Nathaniel J. Schreiber, Naoki Kikugawa, Dmitry Sokolov, Marcin Konczykowski, Darrell G. Schlom, Kyle M. Shen, Andrew P. Mackenzie

Abstract: In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi surface. In superconducting epitaxial thin-film Sr$_{2}$RuO$_{4}$, the relationship between $T_{\text{c}}$ and the residual resistivity $ρ_0$, which in bulk samples… ▽ More In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi surface. In superconducting epitaxial thin-film Sr$_{2}$RuO$_{4}$, the relationship between $T_{\text{c}}$ and the residual resistivity $ρ_0$, which in bulk samples is taken to be a proxy for the low-temperature elastic scattering rate, is far less clear. Using high-energy electron irradiation to controllably introduce point disorder into bulk single-crystal and thin-film Sr$_{2}$RuO$_{4}$, we show that $T_{\text{c}}$ is suppressed in both systems at nearly identical rates. This suggests that part of $ρ_0$ in films comes from defects that do not contribute to superconducting pairbreaking, and establishes a quantitative link between the superconductivity of bulk and thin-film samples. △ Less

Submitted 29 February, 2024; originally announced February 2024.

Epitaxial rare-earth doped complex oxide thin films for infrared applications

Authors: Mythili Surendran, Joshua Rollag, Christopher E. Stevens, Ching-Tai Fu, Harish Kumarasubramanian, Zhe Wang, Darrell G. Schlom, Ricky Gibson, Joshua R. Hendrickson, Jayakanth Ravichandran

Abstract: Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitabl… ▽ More Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitable for scalable quantum memories, on-chip lasers and amplifiers. Here, we report high-quality epitaxial thin films of Tm-doped CaZrO$_3$ grown by pulsed laser deposition for infrared optoelectronic and quantum memory applications. We perform extensive structural and chemical characterization to probe the crystallinity of the films and the do** behavior. Low temperature photoluminescence measurements show sharp radiative transitions in the short-wave infrared range of 1.75 - 2 μm. △ Less

Submitted 19 February, 2024; originally announced February 2024.

Comments: 17 pages, 4 figures

Designed spin-texture-lattice to control anisotropic magnon transport in antiferromagnets

Authors: Peter Meisenheimer, Maya Ramesh, Sajid Husain, Isaac Harris, Hyeon Woo Park, Shiyu Zhou, Hossein Taghinejad, Hongrui Zhang, Lane W. Martin, James Analytis, Paul Stevenson, Jorge Íñiguez-González, Se Kwon Kim, Darrell G. Schlom, Lucas Caretta, Zhi Yao, Ramamoorthy Ramesh

Abstract: Spin waves in magnetic materials are promising information carriers for future computing technologies due to their ultra-low energy dissipation and long coherence length. Antiferromagnets are strong candidate materials due, in part, to their stability to external fields and larger group velocities. Multiferroic aniferromagnets, such as BiFeO$_3$ (BFO), have an additional degree of freedom stemming… ▽ More Spin waves in magnetic materials are promising information carriers for future computing technologies due to their ultra-low energy dissipation and long coherence length. Antiferromagnets are strong candidate materials due, in part, to their stability to external fields and larger group velocities. Multiferroic aniferromagnets, such as BiFeO$_3$ (BFO), have an additional degree of freedom stemming from magnetoelectric coupling, allowing for control of the magnetic structure, and thus spin waves, with electric field. Unfortunately, spin-wave propagation in BFO is not well understood due to the complexity of the magnetic structure. In this work, we explore long-range spin transport within an epitaxially engineered, electrically tunable, one-dimensional (1D) magnonic crystal. We discover a striking anisotropy in the spin transport parallel and perpendicular to the 1D crystal axis. Multiscale theory and simulation suggests that this preferential magnon conduction emerges from a combination of a population imbalance in its dispersion, as well as anisotropic structural scattering. This work provides a pathway to electrically-reconfigurable magnonic crystals in antiferromagnets. △ Less

Submitted 19 February, 2024; originally announced February 2024.

Synthesis of thin film infinite-layer nickelates by atomic hydrogen reduction: clarifying the role of the cap** layer

Authors: Christopher T. Parzyck, Vivek Anil, Yi Wu, Berit H. Goodge, Matthew Roddy, Lena F. Kourkoutis, Darrell G. Schlom, Kyle M. Shen

Abstract: We present an integrated procedure for the synthesis of infinite-layer nickelates using molecular-beam epitaxy with gas-phase reduction by atomic hydrogen. We first discuss challenges in the growth and characterization of perovskite NdNiO$_3$/SrTiO$_3$, arising from post growth crack formation in stoichiometric films. We then detail a procedure for fully reducing NdNiO$_3$ films to the infinite-la… ▽ More We present an integrated procedure for the synthesis of infinite-layer nickelates using molecular-beam epitaxy with gas-phase reduction by atomic hydrogen. We first discuss challenges in the growth and characterization of perovskite NdNiO$_3$/SrTiO$_3$, arising from post growth crack formation in stoichiometric films. We then detail a procedure for fully reducing NdNiO$_3$ films to the infinite-layer phase, NdNiO$_2$, using atomic hydrogen; the resulting films display excellent structural quality, smooth surfaces, and lower residual resistivities than films reduced by other methods. We utilize the in situ nature of this technique to investigate of the role that SrTiO$_3$ cap** layers play in the reduction process, illustrating their importance in preventing the formation of secondary phases at the exposed nickelate surface. A comparative bulk- and surface-sensitive study indicates formation of a polycrystalline crust on the film surface serves to limit the reduction process. △ Less

Submitted 13 January, 2024; originally announced January 2024.

Comments: Main text: 12 pages, 7 figures. Supplemental Materials: 11 pages, 11 figures

Energy Relaxation and dynamics in the correlated metal Sr$_2$RuO$_4$ via THz two-dimensional coherent spectroscopy

Authors: David Barbalas, Ralph Romero III, Dipanjan Chaudhuri, Fahad Mahmood, Hari P. Nair, Nathaniel J. Schreiber, Darrel G. Schlom, K. M. Shen, N. P. Armitage

Abstract: Separating out the contributions of different scattering channels in strongly interacting metals is crucial in identifying the mechanisms that govern their properties. While momentum or current relaxation rates can be readily probed via \textit{dc} resistivity or optical/THz spectroscopy, distinguishing different kinds of inelastic scattering can be more challenging. Using nonlinear THz 2D coheren… ▽ More Separating out the contributions of different scattering channels in strongly interacting metals is crucial in identifying the mechanisms that govern their properties. While momentum or current relaxation rates can be readily probed via \textit{dc} resistivity or optical/THz spectroscopy, distinguishing different kinds of inelastic scattering can be more challenging. Using nonlinear THz 2D coherent spectroscopy, we measure the rates of energy relaxation after THz excitation in the strongly interacting Fermi liquid, Sr$_2$RuO$_4$. Energy relaxation is a bound on the total scattering and specifically a measure of contributions to the electron self-energy that arise from {\it inelastic} coupling to a bath. We observe two distinct energy relaxation channels: a fast process that we interpret as energy loss to the phonon system and a much slower relaxation that we interpret as arising from a non-equilibrium phonon effects and subsequent heat loss through diffusion. Interestingly, even the faster energy relaxation rate is at least an order of magnitude slower than the overall momentum relaxation rate, consistent with strong electron interactions and the dominance of energy-conserving umklapp or interband electron-electron scattering in momentum relaxation. The slowest energy relaxation rate decays on a sub-GHz scale, consistent with the relaxation dynamics of non-equilibrium phonons. Our observations reveal the versatility of nonlinear THz spectroscopy to measure the energy relaxation dynamics in correlated metals. Our work also highlights the need for improved theoretical understanding of such processes in interacting metals. △ Less

Submitted 20 December, 2023; originally announced December 2023.

Comments: 6 pages, 3 figures. SM included

Accumulation and removal of Si impurities on $β-Ga_2O_3$ arising from ambient air exposure

Authors: J. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, Michael O. Thompson, H. G. Xing, D. Jena, H. P. Nair

Abstract: Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affec… ▽ More Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment the sample must be immediately put under vacuum, for the Si fully returns within 10 minutes of additional air exposure. Lastly, we demonstrate that performing a 30 minute HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent $Ga_2O_3$ growth. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Magnon interactions in a moderately correlated Mott insulator

Authors: Qisi Wang, S. Mustafi, E. Fogh, N. Astrakhantsev, Z. He, I. Biało, Ying Chan, L. Martinelli, M. Horio, O. Ivashko, N. E. Shaik, K. von Arx, Y. Sassa, E. Paris, M. H. Fischer, Y. Tseng, N. B. Christensen, A. Galdi, D. G. Schlom, K. M. Shen, T. Schmitt, H. M. Rønnow, J. Chang

Abstract: Quantum fluctuations in low-dimensional systems and near quantum phase transitions have significant influences on material properties. Yet, it is difficult to experimentally gauge the strength and importance of quantum fluctuations. Here we provide a resonant inelastic x-ray scattering study of magnon excitations in Mott insulating cuprates. From the thin film of SrCuO$_2$, single- and bi-magnon d… ▽ More Quantum fluctuations in low-dimensional systems and near quantum phase transitions have significant influences on material properties. Yet, it is difficult to experimentally gauge the strength and importance of quantum fluctuations. Here we provide a resonant inelastic x-ray scattering study of magnon excitations in Mott insulating cuprates. From the thin film of SrCuO$_2$, single- and bi-magnon dispersions are derived. Using an effective Heisenberg Hamiltonian generated from the Hubbard model, we show that the single-magnon dispersion is only described satisfactorily when including significant quantum corrections stemming from magnon-magnon interactions. Comparative results on La$_2$CuO$_4$ indicate that quantum fluctuations are much stronger in SrCuO$_2$ suggesting closer proximity to a magnetic quantum critical point. Monte Carlo calculations reveal that other magnetic orders may compete with the antiferromagnetic Néel order as the ground state. Our results indicate that SrCuO$_2$ - due to strong quantum fluctuations - is a unique starting point for the exploration of novel magnetic ground states. △ Less

Submitted 26 June, 2024; v1 submitted 28 November, 2023; originally announced November 2023.

Journal ref: Nature Communications 15, 5348 (2024)

Spontaneous supercrystal formation during a strain-engineered metal-insulator transition

Authors: O. Yu. Gorobtsov, L. Miao, Z. Shao, Y. Tan, N. I. Schnitzer, B. H. Goodge, J. Ruf, D. Weinstock, M. Cherukara, M. V. Holt, H. Nair, L. -Q. Chen, L. F. Kourkoutis, D. G. Schlom, K. M. Shen, A. Singer

Abstract: Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition and demonstrate correlated switching of functional electronic properties. We elucidate in-situ formation of an intrinsic supercrystal in a Ca2RuO4 thin film. Mac… ▽ More Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition and demonstrate correlated switching of functional electronic properties. We elucidate in-situ formation of an intrinsic supercrystal in a Ca2RuO4 thin film. Machine learning-assisted X-ray nanodiffraction together with electron microscopy reveal multi-scale periodic domain formation at and below the film transition temperature (TFilm ~ 200-250 K) and a separate anisotropic spatial structure at and above TFilm. Local resistivity measurements imply an intrinsic coupling of the supercrystal orientation to the material's anisotropic conductivity. Our findings add an additional degree of complexity to the physical understanding of Mott transitions, opening opportunities for designing materials with tunable electronic properties. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Low energy electrodynamics and a hidden Fermi liquid in the heavy-fermion CeCoIn$_5$

Authors: L. Y. Shi, Zhenisbek Tagay, Jiahao Liang, Khoan Duong, Yi Wu, F. Ronning, Darrell G. Schlom, Kyle Shen, N. P. Armitage

Abstract: We present time-domain THz spectroscopy of thin films of the heavy-fermion superconductor CeCoIn$_5$. The complex optical conductivity is analyzed through a Drude model and extended Drude model analysis. Below the $\approx$ 40 K Kondo coherence temperature, a narrow Drude-like peak forms, as the result of the $f$ orbital - conduction electron hybridization and the formation of the heavy-fermion st… ▽ More We present time-domain THz spectroscopy of thin films of the heavy-fermion superconductor CeCoIn$_5$. The complex optical conductivity is analyzed through a Drude model and extended Drude model analysis. Below the $\approx$ 40 K Kondo coherence temperature, a narrow Drude-like peak forms, as the result of the $f$ orbital - conduction electron hybridization and the formation of the heavy-fermion state. Via an extended Drude model analysis, we measure the frequency-dependent scattering rate ($1/ τ$) and effective mass ($m^*/m_b$). This scattering rate shows a linear dependence on temperature, which matches the dependence of the resistivity as expected. Nonetheless, the width of the low-frequency Drude peak (characterized by a {\it renormalized} quasiparticle scattering rate ($1 / τ^* = m_b/ m^* τ$) does show a $T^2$ dependence giving evidence for a hidden Fermi state. △ Less

Submitted 16 October, 2023; originally announced October 2023.

Comments: 5 pages, 4 figures

Predictions and correlation analyses of Ellingham diagrams in binary oxides

Authors: Shun-Li Shang, Shuang Lin, Michael C. Gao, Darrell G. Schlom, Zi-Kui Liu

Abstract: Knowing oxide-forming ability is vital to gain desired or avoid deleterious oxides formation through tuning oxidizing environment and materials chemistry. Here, we have conducted a comprehensive thermodynamic analysis of 137 binary oxides using the presently predicted Ellingham diagrams. It is found that the active elements to form oxides easily are the f-block elements (lanthanides and actinides)… ▽ More Knowing oxide-forming ability is vital to gain desired or avoid deleterious oxides formation through tuning oxidizing environment and materials chemistry. Here, we have conducted a comprehensive thermodynamic analysis of 137 binary oxides using the presently predicted Ellingham diagrams. It is found that the active elements to form oxides easily are the f-block elements (lanthanides and actinides), elements in the groups II, III, and IV (alkaline earth, Sc, Y, Ti, Zr, and Hf), and Al and Li; while the noble elements with their oxides nonstable and easily reduced are coinage metals (Cu, Ag, and especially Au), Pt-group elements, and Hg and Se. Machine learning based sequential feature selection indicates that oxide-forming ability can be represented by electronic structures of pure elements, for example, their d- and s-valence electrons, Mendeleev numbers, and the groups, making the periodic table a useful tool to tailor oxide-forming ability. The other key elemental features to correlate oxide-forming ability are thermochemical properties such as melting points and standard entropy at 298 K of pure elements. It further shows that the present Ellingham diagrams enable qualitatively understanding and even predicting oxides formed in multicomponent materials, such as the Fe-20Cr-20Ni alloy (in wt.%) and the equimolar high entropy alloy of AlCoCrFeNi, which are in accordance with thermodynamic calculations using the CALPHAD approach and experimental observations in the literature. △ Less

Submitted 10 August, 2023; originally announced August 2023.

Absence of $3a_0$ Charge Density Wave Order in the Infinite Layer Nickelates

Authors: C. T. Parzyck, N. K. Gupta, Y. Wu, V. Anil, L. Bhatt, M. Bouliane, R. Gong, B. Z. Gregory, A. Luo, R. Sutarto, F. He, Y. -D. Chuang, T. Zhou, G. Herranz, L. F. Kourkoutis, A. Singer, D. G. Schlom, D. G. Hawthorn, K. M. Shen

Abstract: A hallmark of many unconventional superconductors is the presence of many-body interactions which give rise to broken symmetry states intertwined with superconductivity. Recent resonant soft x-ray scattering experiments report commensurate $3a_0$ charge density wave order in the infinite layer nickelates, which has important implications regarding the universal interplay between charge order and s… ▽ More A hallmark of many unconventional superconductors is the presence of many-body interactions which give rise to broken symmetry states intertwined with superconductivity. Recent resonant soft x-ray scattering experiments report commensurate $3a_0$ charge density wave order in the infinite layer nickelates, which has important implications regarding the universal interplay between charge order and superconductivity in both the cuprates and nickelates. Here, we present x-ray scattering and spectroscopy measurements on a series of NdNiO$_{2+x}$ samples which reveal that the signatures of charge density wave order are absent in fully reduced, single-phase NdNiO$_2$. The $3a_0$ superlattice peak instead originates from a partially reduced impurity phase where excess apical oxygens form ordered rows with 3 unit cell periodicity. The absence of any observable charge density wave order in NdNiO$_2$ highlights a crucial difference between the phase diagrams of the cuprate and nickelate superconductors. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Comments: Main Text: 8 pages, 4 figures. Supplemental: 12 pages, 12 figures

3D oxygen vacancy order and defect-property relations in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices

Authors: K. A. Hunnestad, H. Das, C. Hatzoglou, M. Holtz, C. M. Brooks, A. T. J. van Helvoort, D. A. Muller, D. G. Schlom, J. A. Mundy, D. Meier

Abstract: Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Her… ▽ More Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices, revealing a one-to-one correlation between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10$^{14}$ cm$^{-2}$, congruent with the formula-unit-thick ferrimagnetic LuFe$_2$O$_4$ layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO$_3$ and LuFe$_2$O$_4$ layers, respectively. The results demonstrate the importance of oxygen vacancies for the room-temperature multiferroicity in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures. △ Less

Submitted 30 June, 2023; originally announced July 2023.

Atomically smooth films of CsSb: a chemically robust visible light photocathode

Authors: C. T. Parzyck, C. A. Pennington, W. J. I. DeBenedetti, J. Balajka, E. Echeverria, H. Paik, L. Moreschini, B. D. Faeth, C. Hu, J. K. Nangoi, V. Anil, T. A. Arias, M. A. Hines, D. G. Schlom, A. Galdi, K. M. Shen, J. M. Maxson

Abstract: Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and co… ▽ More Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and contamination, must be overcome. By exploring the growth of CsxSb thin films monitored by in situ electron diffraction, the conditions to reproducibly synthesize atomically smooth films of CsSb on 3C-SiC (100) and graphene coated TiO2 (110) substrates are identified, and detailed structural, morphological, and electronic characterization is presented. These films combine high quantum efficiency in the visible (up to 1.2% at 400 nm), an easily accessible photoemission threshold of 550 nm, low surface roughness (down to 600 pm on a 1 um scale), and a robustness against oxidation up to 15 times greater then Cs3Sb. These properties suggest that CsSb has the potential to operate as an alternative to Cs$_3$Sb in electron source applications where the demands of the vacuum environment might otherwise preclude the use of traditional alkali antimonides. △ Less

Submitted 31 May, 2023; originally announced May 2023.

Comments: 11 pages, 6 figures, 1 table

Journal ref: APL Mater. 11, 101125 (2023)

Electronic nematic order in the normal state of strontium ruthenate

Authors: Ryan Russell, Hari P. Nair, Kyle M. Shen, Darrell G. Schlom, John W. Harter

Abstract: Despite significant achievements in characterizing the properties of Sr$_2$RuO$_4$ over the last three decades, the precise nature of its electronic ground state is still unresolved. In this work, we provide a missing piece of the puzzle by uncovering evidence of electronic nematic order in the normal state of Sr$_2$RuO$_4$, revealed by ultrafast time-resolved optical dichroism measurements of uni… ▽ More Despite significant achievements in characterizing the properties of Sr$_2$RuO$_4$ over the last three decades, the precise nature of its electronic ground state is still unresolved. In this work, we provide a missing piece of the puzzle by uncovering evidence of electronic nematic order in the normal state of Sr$_2$RuO$_4$, revealed by ultrafast time-resolved optical dichroism measurements of uniaxially strained thin films. This nematic order, whose domains are aligned by the strain, spontaneously breaks the four-fold rotational symmetry of the crystal. The temperature dependence of the dichroism resembles an Ising-like order parameter, and optical pum** induces a coherent oscillation of its amplitude mode. A microscopic model of intra-unit-cell nematic order is presented, highlighting the importance of Coulomb repulsion between neighboring oxygen $p$-orbitals. The existence of electronic nematic order in the normal state of Sr$_2$RuO$_4$ may have consequences for the form and mechanism of superconductivity in this material. △ Less

Submitted 5 April, 2023; originally announced April 2023.

Journal ref: Physical Review B 108, L081105 (2023)

Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott Insulator

Authors: Anita Verma, Denis Golež, Oleg Yu. Gorobtsov, Kelson Kaj, Ryan Russell, Jeffrey Z. Kaaret, Erik Lamb, Guru Khalsa, Hari P Nair, Yifei Sun, Ryan Bouck, Nathaniel Schreiber, Jacob P. Ruf, Varun Ramaprasad, Yuya Kubota, Tadashi Togashi, Vladimir A. Stoica, Hari Padmanabhan, John W. Freeland, Nicole A. Benedek, Oleg Shpyrko, John W. Harter, Richard D. Averitt, Darrell G. Schlom, Kyle M. Shen , et al. (2 additional authors not shown)

Abstract: Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is ac… ▽ More Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical time scales dominated by slow coarsening dynamics. Here, we use time-resolved X-ray diffraction and reflectivity measurements to investigate the photoinduced insulator-to-metal transition in an epitaxially strained thin film Mott insulator Ca2RuO4. The dynamical transition occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, followed by a slower electronic evolution into a metastable non-equilibrium state. Microscopic calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics within a recently published equilibrium energy landscape picture explain the threshold-behavior and elucidate the delayed onset of the electronic phase transition in terms of kinematic constraints on recombination. Analysis of satellite scattering peaks indicates the persistence of a strain-induced nano-texture in the photoexcited film. This work highlights the importance of combined electronic and structural studies to unravel the physics of dynamic transitions and elucidates the role of strain in tuning the timescales of photoinduced processes. △ Less

Submitted 6 April, 2023; v1 submitted 4 April, 2023; originally announced April 2023.

An Algorithm for Subtraction of Doublet Emission Lines in Angle-Resolved Photoemission Spectroscopy

Authors: Yaoju Tarn, Mekhola Sinha, Christopher Pasco, Darrell G. Schlom, Tyrel M. McQueen, Kyle M. Shen, Brendan D. Faeth

Abstract: Plasma discharge lamps are widely utilized in the practice of angle-resolved photoemission spectroscopy (ARPES) experiments as narrow-linewidth ultraviolet photon sources. However, many emission lines such as Ar-I, Ne-I, and Ne-II have closely spaced doublet emission lines, which result in superimposed replica on the measured ARPES spectra. Here, we present a simple method for subtracting the cont… ▽ More Plasma discharge lamps are widely utilized in the practice of angle-resolved photoemission spectroscopy (ARPES) experiments as narrow-linewidth ultraviolet photon sources. However, many emission lines such as Ar-I, Ne-I, and Ne-II have closely spaced doublet emission lines, which result in superimposed replica on the measured ARPES spectra. Here, we present a simple method for subtracting the contribution of these doublet emission lines from photoemission spectra. Benchmarking against ARPES spectra of well-characterized 2D materials, we demonstrate that this algorithm manages to subtract the doublet signal and reproduce the key features of the monochromated He-I$α$ spectra in a physically sound manner that reliably reproduces quantifiable dispersion relations and quasiparticle lifetimes. △ Less

Submitted 13 March, 2023; originally announced March 2023.

Comments: 8 pages, 4 main figures, 3 appendix figures

Employing High-temperature-grown SrZrO$_3$ Buffer to Enhance the Electron Mobility in La:BaSnO$_3$-based Heterostructures

Authors: Prosper Ngabonziza, Jisung Park, Wilfried Sigle, Peter A. van Aken, Jochen Mannhart, Darrell G. Schlom

Abstract: We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143 cm$^2$V$^{-1}$s$^{-1}$ are achieved for heterostructures grown on DyScO$_3$ (110), MgO (001), and TbScO$_3$ (110) crystalline substrates, respectively. This is realized by first… ▽ More We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143 cm$^2$V$^{-1}$s$^{-1}$ are achieved for heterostructures grown on DyScO$_3$ (110), MgO (001), and TbScO$_3$ (110) crystalline substrates, respectively. This is realized by first employing pulsed laser deposition to grow at very high temperature the SrZrO$_3$ buffer layer to reduce dislocation density in the active layer, then followed by the epitaxial growth of an overlaying La:BaSnO$_3$ active layer by molecular-beam epitaxy. Structural properties of these heterostructures are investigated, and the extracted upper limit of threading dislocations is well below $1.0\times 10^{10}$cm$^{-2}$ for buffered films on DyScO$_3$, MgO, and TbScO$_3$ substrates. The present results provide a promising route towards achieving high mobility in buffered La:BaSnO$_3$ films prepared on most, if not all, oxide substrates with large compressive or tensile lattice mismatches to the film. △ Less

Submitted 13 June, 2023; v1 submitted 23 February, 2023; originally announced February 2023.

Comments: 9 pages and 5 Figures in the Maintext. 3 pages and 3 Figures in the Supplementary Information

Journal ref: Applied Physics Letters 122, 241902 (2023)

Epitaxial NaxCoO2 Thin Films via Molecular-Beam Epitaxy and Topotactic Transformation: a Model System for Sodium Intercalation

Authors: S. D. Matson, J. Sun, J. J. Huang, D. J. Werder, D. G. Schlom, A. Singer

Abstract: Renewable energy sources such as solar and wind are critical to combatting global warming. Nevertheless, their intermittent energy generation requires the development of large-scale grid energy storage, in contrast to the on-demand generation of coal-based power plants. Sodium-ion batteries offer a promising potential technology, yet because sodium ions are larger than lithium ions, sodium-ion int… ▽ More Renewable energy sources such as solar and wind are critical to combatting global warming. Nevertheless, their intermittent energy generation requires the development of large-scale grid energy storage, in contrast to the on-demand generation of coal-based power plants. Sodium-ion batteries offer a promising potential technology, yet because sodium ions are larger than lithium ions, sodium-ion intercalation results in more drastic structural rearrangements. An improved understanding of structural dynamics and ionic diffusion pathways is crucial to develo** more durable sodium-ion batteries. Here we synthesize epitaxial NaxCoO2 by using molecular-beam epitaxy and topotactic transformation. In the synthesized epitaxial films, the CoO2 layers are canted with respect to the film surface, allowing electrochemical extraction of sodium ions, which we confirm via ex-situ x-ray diffraction. We anticipate the epitaxial thin films reported here to enable future operando studies of interfaces, subtle lattice distortions, and microstructure during electrochemical cycling. △ Less

Submitted 17 January, 2023; originally announced January 2023.

Molecular Beam Epitaxy of KTaO$_3$

Authors: Tobias Schwaigert, Salva Salmani-Razaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi

Abstract: Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 co… ▽ More Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 contained in a conventional effusion cell as well as an electron-beam-heated tantalum source. Excess potassium and a combination of ozone and oxygen (10 \% O3 + 90 \% O2) were simultaneously supplied with the TaO$_2$ (or tantalum) molecular beams to grow the KTaO$_3$ films. Laue fringes suggest that the films are smooth with an abrupt film/substrate interface. Cross-sectional scanning transmission electron microscopy does not show any extended defects and confirms that the films have an atomically abrupt interface with the substrate. Atomic force microscopy reveals atomic steps at the surface of the grown films. Reciprocal space map** demonstrates that the films, when sufficiently thin, are coherently strained to the SrTiO$_3$ (001) and GdScO$_3$ (110) substrates. △ Less

Submitted 29 December, 2022; originally announced December 2022.

Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy

Authors: Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

Abstract: We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti… ▽ More We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Comments: 19 pages, 7 figures, 2 tables, 2 pages supplementary materials

Real-space imaging of polar and elastic nano-textures in thin films via inversion of diffraction data

Authors: Ziming Shao, Noah Schnitzer, Jacob Ruf, Oleg Y. Gorobtsov, Cheng Dai, Berit H. Goodge, Tiannan Yang, Hari Nair, Vlad A. Stoica, John W. Freeland, Jacob Ruff, Long-Qing Chen, Darrell G. Schlom, Kyle M. Shen, Lena F. Kourkoutis, Andrej Singer

Abstract: Exploiting the emerging nanoscale periodicities in epitaxial, single-crystal thin films is an exciting direction in quantum materials science: confinement and periodic distortions induce novel properties. The structural motifs of interest are ferroelastic, ferroelectric, multiferroic, and, more recently, topologically protected magnetization and polarization textures. A critical step towards heter… ▽ More Exploiting the emerging nanoscale periodicities in epitaxial, single-crystal thin films is an exciting direction in quantum materials science: confinement and periodic distortions induce novel properties. The structural motifs of interest are ferroelastic, ferroelectric, multiferroic, and, more recently, topologically protected magnetization and polarization textures. A critical step towards heterostructure engineering is understanding their nanoscale structure, best achieved through real-space imaging. X-ray Bragg coherent diffractive imaging visualizes sub-picometer crystalline displacements with tens of nanometers spatial resolution. Yet, it is limited to objects spatially confined in all three dimensions and requires highly coherent, laser-like x-rays. Here we lift the confinement restriction by develo** real-space imaging of periodic lattice distortions: we combine an iterative phase retrieval algorithm with unsupervised machine learning to invert the diffuse scattering in conventional x-ray reciprocal-space map** into real-space images of polar and elastic textures in thin epitaxial films. We first demonstrate our imaging in PbTiO3/SrTiO3 superlattices to be consistent with published phase-field model calculations. We then visualize strain-induced ferroelastic domains emerging during the metal-insulator transition in Ca2RuO4 thin films. Instead of homogeneously transforming into a low-temperature structure (like in bulk), the strained Mott insulator splits into nanodomains with alternating lattice constants, as confirmed by cryogenic scanning transmission electron microscopy. Our study reveals the type, size, orientation, and crystal displacement field of the nano-textures. The non-destructive imaging of textures promises to improve models for their dynamics and enable advances in quantum materials and microelectronics. △ Less

Submitted 2 November, 2022; originally announced November 2022.

Atomic-scale map** and quantification of local Ruddlesden-Popper phase variations

Authors: Erin E. Fleck, Berit H. Goodge, Matthew R. Barone, Hari P. Nair, Nathaniel J. Schreiber, Natalie M. Dawley, Darrell G. Schlom, Lena F. Kourkoutis

Abstract: The Ruddlesden-Popper ($A_{n+1}B_{n}\text{O}_{3n+1}$) compounds are a highly tunable class of materials whose functional properties can be dramatically impacted by their structural phase $n$. The negligible energetic differences associated with forming a sample with a single value of $n$ versus a mixture of $n$ makes the growth of these materials difficult to control and can lead to local atomic-s… ▽ More The Ruddlesden-Popper ($A_{n+1}B_{n}\text{O}_{3n+1}$) compounds are a highly tunable class of materials whose functional properties can be dramatically impacted by their structural phase $n$. The negligible energetic differences associated with forming a sample with a single value of $n$ versus a mixture of $n$ makes the growth of these materials difficult to control and can lead to local atomic-scale structural variation arising from small stoichiometric deviations. In this work, we present a Python analysis platform to detect, measure, and quantify the presence of different $n$-phases based on atomic-resolution scanning transmission electron microscopy (STEM) images in a statistically rigorous manner. We employ phase analysis on the 002 Bragg peak to identify horizontal Ruddlesden-Popper faults which appear as regions of high positive compressive strain within the lattice image, allowing us to quantify the local structure. Our semi-automated technique offers statistical advantages by considering effects of finite projection thickness, limited fields of view, and precise sampling rates. This method retains the real-space distribution of layer variations allowing for a spatial map** of local $n$-phases, enabling both quantification of intergrowth occurrence as well as qualitative description of their distribution, opening the door to new insights and levels of control over a range of layered materials. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 8 pages, 5 figures

Gapped collective charge excitations and interlayer hop** in cuprate superconductors

Authors: M. Hepting, M. Bejas, A. Nag, H. Yamase, N. Coppola, D. Betto, C. Falter, M. Garcia-Fernandez, S. Agrestini, K. -J. Zhou, M. Minola, C. Sacco, L. Maritato, P. Orgiani, H. I. Wei, K. M. Shen, D. G. Schlom, A. Galdi, A. Greco, B. Keimer

Abstract: We use resonant inelastic x-ray scattering (RIXS) to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ (SLCO). We detect a plasmon gap of $\sim$~120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in SLCO are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by laye… ▽ More We use resonant inelastic x-ray scattering (RIXS) to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ (SLCO). We detect a plasmon gap of $\sim$~120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in SLCO are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by layered $t$-$J$-$V$ model calculations. A similar analysis performed on recent RIXS data from other cuprates suggests that the plasmon gap is generic and its size is related to the magnitude of the interlayer hop** $t_z$. Our work signifies the three-dimensionality of the charge dynamics in layered cuprates and provides a new method to determine $t_z$. △ Less

Submitted 28 June, 2022; originally announced June 2022.

Comments: 17 pages, 10 figures, includes Supplemental Material. Accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 129, 047001 (2022)

Magnetic Excitations in Square Lattice Iridates: Contrast between Ba$_2$IrO$_4$ and Sr$_2$IrO$_4$

Authors: J. P. Clancy, H. Gretarsson, A. Lupascu, J. A. Sears, Z. Nie, M. H. Upton, Jungho Kim, Z. Islam, M. Uchida, D. G. Schlom, K. M. Shen, Young-June Kim

Abstract: We report a resonant inelastic x-ray scattering (RIXS) investigation of ultra-thin epitaxial films of Ba$_2$IrO$_4$, and compare their low energy magnetic and spin-orbit excitations to those of their sister compound Sr$_2$IrO$_4$. Due to the 180$^\circ$ Ir-O-Ir bond, the bandwidth of the magnon and spin-orbiton is significantly larger in Ba$_2$IrO$_4$, making it difficult to describe these two typ… ▽ More We report a resonant inelastic x-ray scattering (RIXS) investigation of ultra-thin epitaxial films of Ba$_2$IrO$_4$, and compare their low energy magnetic and spin-orbit excitations to those of their sister compound Sr$_2$IrO$_4$. Due to the 180$^\circ$ Ir-O-Ir bond, the bandwidth of the magnon and spin-orbiton is significantly larger in Ba$_2$IrO$_4$, making it difficult to describe these two types of excitations as separate well-defined quasiparticles. Both types of excitations are found to be quite sensitive to the effect of epitaxial strain. In addition, we find that the d-level inversion observed in Sr$_2$IrO$_4$ is absent in Ba$_2$IrO$_4$, as predicted in recent theoretical studies. Our results illustrate that the magnetic properties of Ba$_2$IrO$_4$ are substantially different from those of Sr$_2$IrO$_4$, suggesting that these materials need to be examined more carefully with electron itinerancy taken into account. △ Less

Submitted 24 March, 2022; originally announced March 2022.

Comments: 7 pages, 4 figures

X-ray Nano-imaging of Defects in Thin Film Catalysts via Cluster Analysis

Authors: Aileen Luo, Oleg Yu. Gorobtsov, Jocienne N. Nelson, Ding-Yuan Kuo, Ziming Shao, Ryan Bouck, Mathew Cherukara, Martin V. Holt, Kyle M. Shen, Darrell G. Schlom, ** Suntivich, Andrej Singer

Abstract: Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects rem… ▽ More Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects remain challenging to detect and localize using nanodiffraction, due to their weak diffuse scattering. Here we apply an unsupervised machine learning clustering algorithm to isolate the low-intensity diffuse scattering in as-grown and alkaline-treated thin epitaxially strained SIO films. We pinpoint the defect locations, find additional strain variation in the morphology of electrochemically cycled SIO, and interpret the defect type by analyzing the diffraction profile through clustering. Our findings demonstrate the use of a machine learning clustering algorithm for identifying and characterizing hard-to-find crystallographic defects in thin films of electrocatalysts and highlight the potential to study electrochemical reactions at defect sites in operando experiments. △ Less

Submitted 9 January, 2023; v1 submitted 18 March, 2022; originally announced March 2022.

Comments: 11 pages and 4 figures in main text, supporting information included

Strain-induced orbital energy shift in antiferromagnetic RuO2 revealed by resonant elastic x-ray scattering

Authors: Benjamin Gregory, Jörg Strempfer, Daniel Weinstock, Jacob Ruf, Yifei Sun, Hari Nair, Nathaniel J. Schreiber, Darrell G. Schlom, Kyle M. Shen, Andrej Singer

Abstract: In its ground state, RuO2 was long thought to be an ordinary metallic paramagnet. Recent neutron and x-ray diffraction revealed that bulk RuO2 is an antiferromagnet (AFM) with TN above 300 K. Furthermore, epitaxial strain induces novel superconductivity in thin films of RuO2 below 2 K. Here, we present a resonant elastic x-ray scattering (REXS) study at the Ru L2 edge of the strained RuO2 films ex… ▽ More In its ground state, RuO2 was long thought to be an ordinary metallic paramagnet. Recent neutron and x-ray diffraction revealed that bulk RuO2 is an antiferromagnet (AFM) with TN above 300 K. Furthermore, epitaxial strain induces novel superconductivity in thin films of RuO2 below 2 K. Here, we present a resonant elastic x-ray scattering (REXS) study at the Ru L2 edge of the strained RuO2 films exhibiting the strain-induced superconductivity. We observe an azimuthal modulation of the 100 Bragg peak consistent with canted AFM found in bulk. Most notably, in the strained films displaying novel superconductivity, we observe a ~1 eV shift of the Ru eg orbitals to a higher energy. The energy shift is smaller in thicker, relaxed films and films with a different strain direction. Our results provide further evidence of the utility of epitaxial strain as a tuning parameter in complex oxides. △ Less

Submitted 18 January, 2022; originally announced January 2022.

Comments: 20 pages, 3 main figures, 3 supplementary figures

Nonvolatile Electric-Field Control of Inversion Symmetry

Authors: Lucas Caretta, Yu-Tsun Shao, Jia Yu, Antonio B. Mei, Bastien F. Grosso, Cheng Dai, Piush Behera, Daehun Lee, Margaret McCarter, Eric Parsonnet, Harikrishnan K. P., Fei Xue, Ed Barnard, Steffen Ganschow, Archana Raja, Lane W. Martin, Long-Qing Chen, Manfred Fiebig, Keji Lai, Nicola A. Spaldin, David A. Muller, Darrell G. Schlom, Ramamoorthy Ramesh

Abstract: In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers con… ▽ More In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Comments: L Caretta and Y-T Shao contributed equally. 64 pages, 4 figures, 25 supplemental figures, 1 supplemental table

A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit

Authors: C. T. Parzyck, A. Galdi, J. K. Nangoi, W. J. I. DeBenedetti, J. Balajka, B. D. Faeth, H. Paik, C. Hu, T. A. Arias, M. A. Hines, D. G. Schlom, K. M. Shen, J. M. Maxson

Abstract: The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films… ▽ More The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs$_3$Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers. △ Less

Submitted 28 December, 2021; originally announced December 2021.

Comments: Submitted Manuscript: 8 pages, 4 figures

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Jonathan P. McCandless, Jisung Park, Kursti DeLello, David A. Muller, Huili G. Xing, Debdeep Jena, Darrell G. Schlom

Abstract: We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular catalysts In$_2$O and SnO we increase the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. This catalytic action is explained by a metastable adlayer $A$, which increases the reaction probability of the reactants Ga$_2$O and In$_2$O with active atomic… ▽ More We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular catalysts In$_2$O and SnO we increase the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. This catalytic action is explained by a metastable adlayer $A$, which increases the reaction probability of the reactants Ga$_2$O and In$_2$O with active atomic oxygen, leading to an increase of the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. We derive a model for the growth of binary III-O and IV-O materials by $S$-MBE and apply these findings to a generalized catalytic description for metal-oxide catalyzed epitaxy (MOCATAXY), applicable to elemental and molecular catalysts. We derive a mathematical description of $S$-MBE and MOCATAXY providing a computational framework to set growth parameters in previously inaccessible kinetic and thermodynamic growth regimes when using the aforementioned catalysis. Our results indicate MOCATAXY takes place with a suboxide catalyst rather than with an elemental catalyst. As a result of the growth regimes achieved, we demonstrate a Ga$_2$O$_3$/Al$_2$O$_3$ heterostructure with unrivaled crystalline quality, paving the way to the preparation of oxide device structures with unprecedented perfection. △ Less

Submitted 10 December, 2021; v1 submitted 9 December, 2021; originally announced December 2021.

Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

Authors: A. Brewer, S. Lindemann, B. Wang, W. Maeng, J. Frederick, F. Li, Y. Choi, P. J. Thompson, J. W. Kim, T. Mooney, V. Vaithyanathan, D. G. Schlom, M. S. Rzchowski, L. Q. Chen, P. J. Ryan, C. B. Eom

Abstract: Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary (MPB). Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a red… ▽ More Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary (MPB). Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clam** by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ AC electric field driven in-operando synchrotron x-ray diffraction (XRD) on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d33 < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d33 > 1000 pm/V. Using diffraction with spatial map**, we find that lateral constraints imposed by the boundary between active and inactive material also inhibits the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies. △ Less

Submitted 16 October, 2021; originally announced October 2021.

Oxide two-dimensional electron gas with high mobility at room-temperature

Authors: Kitae Eom, Hanjong Paik, **sol Seo, Neil Campbell, Evgeny Y. Tsymbal, Sang Ho Oh, Mark Rzchowski, Darrell G. Schlom, Chang-beom Eom

Abstract: The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO… ▽ More The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm2/V s at a carrier concentration of 1.7x1013 cm-2. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-based 2DEGs. We achieved this by combining a thick BSO buffer layer with an ex-situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO2-terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak-beam dark field imaging and in-line electron holography technique, we reveal a reduction of the threading dislocation density, and provide direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface. Our work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Comments: 21 pages, 5 figures

Tilted spin current generated by the collinear antiferromagnet RuO2

Authors: Arnab Bose, Nathaniel J. Schreiber, Rakshit Jain, Ding-Fu Shao, Hari P. Nair, Jiaxin Sun, Xiyue S. Zhang, David A. Muller, Evgeny Y. Tsymbal, Darrell G. Schlom, Daniel C. Ralph

Abstract: We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transvers… ▽ More We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transverse spin current even in the absence of spin-orbit coupling. This produces characteristic changes in all three components of the E induced torque vector as a function of the angle of E relative to the crystal axes, corresponding to a spin current with a well defined tilted spin orientation s approximately (but not exactly) parallel to the Neel vector, flowing perpendicular to both E and S. This angular dependence is the signature of an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic or ferromagnetic materials. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Journal ref: Nature Electronics 5, 267 (2022)

Deconvolution of phonon scattering by ferroelectric domain walls and point defects in a PbTiO3 thin film deposited in a composition-spread geometry

Authors: David Bugallo, Eric Langenberg, Elias Ferreiro-Vila, Eva H. Smith, Christina Stefani, Xavier Batlle, Gustau Catalan, Neus Domingo, Darrell G. Schlom, Francisco Rivadulla

Abstract: We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film deposited in a composition-spread geometry enabling a continuous range of compositions from ~25% titanium-deficient to ~20% titanium-rich to be studied. By fitting the experimental results to the Debye model we deconvolve and quantify the two main phonon scattering sources i… ▽ More We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film deposited in a composition-spread geometry enabling a continuous range of compositions from ~25% titanium-deficient to ~20% titanium-rich to be studied. By fitting the experimental results to the Debye model we deconvolve and quantify the two main phonon scattering sources in the system: ferroelectric domain walls (DWs) and point defects. Our results prove that ferroelectric DWs are the main agent limiting the thermal conductivity in this system, not only in the stoichiometric region of the thin film ([Pb]/[Ti]~1), but also when the concentration of cation point defects is significant (up to ~15%). Hence, DWs in ferroelectric materials are a source of phonon scattering at least as effective as point defects. Our results demonstrate the viability and effectiveness of using reconfigurable DWs to control the thermal conductivity in solid-state devices. △ Less

Submitted 29 April, 2021; originally announced April 2021.

Quantum Oscillations and the Quasiparticle Properties of Thin Film Sr$_2$RuO$_4$

Authors: Yawen Fang, Hari P. Nair, Ludi Miao, Berit Goodge, Nathaniel J. Schreiber, Jacob P. Ruf, Lena F. Kourkoutis, Kyle M. Shen, Darrell G. Schlom, B. J. Ramshaw

Abstract: We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the… ▽ More We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$. Unlike single-crystal Sr$_2$RuO$_4$, where the quantum and transport lifetimes are roughly equal, we find that the transport lifetime is $1.3\pm0.1$ times longer than the quantum lifetime. This suggests that extended (rather than point) defects may be the dominant source of quasiparticle scattering in these films. To test this idea, we perform cross-sectional STEM and find that out-of-phase boundaries extending the entire thickness of the film occur with a density that is consistent with the quantum mean free path. The long quasiparticle lifetimes make these films ideal for studying the unconventional superconducting state in Sr$_2$RuO$_4$ through the fabrication of devices -- such as planar tunnel junctions and SQUIDs. △ Less

Submitted 2 August, 2021; v1 submitted 28 February, 2021; originally announced March 2021.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 104, 045152 (2021)

Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO$_3$

Authors: Brendan D. Faeth, Saien Xie, Shuolong Yang, Jason K. Kawasaki, Jocienne N. Nelson, Shuyuan Zhang, Pramita Mishra, Chen Li, Christopher Jozwiak, Aaron Bostwick, Eli Rotenberg, Darrell G. Schlom, Kyle M. Shen

Abstract: The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO$_3$, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO$_3$ substrate might… ▽ More The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO$_3$, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO$_3$ substrate might contribute to the enhanced superconducting pairing temperature. Alternatively, it has also been recently proposed that such replica bands might instead originate from extrinsic final state losses associated with the photoemission process. Here, we perform a quantitative examination of replica bands in monolayer FeSe/SrTiO$_3$, where we are able to conclusively demonstrate that the replica bands are indeed signatures of intrinsic electron-boson coupling, and not associated with final state effects. A detailed analysis of the energy splittings between the higher-order replicas, as well as other self-energy effects, allow us to determine that the interfacial electron-phonon coupling in the system corresponds to a value of $λ= 0.19 \pm 0.02$. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 127, 016803 (2021)

Electron ptychography achieves atomic-resolution limits set by lattice vibrations

Authors: Zhen Chen, Yi Jiang, Yu-Tsun Shao, Megan E. Holtz, Michal Odstrčil, Manuel Guizar-Sicairos, Isabelle Hanke, Steffen Ganschow, Darrell G. Schlom, David A. Muller

Abstract: Transmission electron microscopes use electrons with wavelengths of a few picometers, potentially capable of imaging individual atoms in solids at a resolution ultimately set by the intrinsic size of an atom. Unfortunately, due to imperfections in the imaging lenses and multiple scattering of electrons in the sample, the image resolution reached is 3 to 10 times worse. Here, by inversely solving t… ▽ More Transmission electron microscopes use electrons with wavelengths of a few picometers, potentially capable of imaging individual atoms in solids at a resolution ultimately set by the intrinsic size of an atom. Unfortunately, due to imperfections in the imaging lenses and multiple scattering of electrons in the sample, the image resolution reached is 3 to 10 times worse. Here, by inversely solving the multiple scattering problem and overcoming the aberrations of the electron probe using electron ptychography to recover a linear phase response in thick samples, we demonstrate an instrumental blurring of under 20 picometers. The widths of atomic columns in the measured electrostatic potential are now no longer limited by the imaging system, but instead by the thermal fluctuations of the atoms. We also demonstrate that electron ptychography can potentially reach a sub-nanometer depth resolution and locate embedded atomic dopants in all three dimensions with only a single projection measurement. △ Less

Submitted 2 January, 2021; originally announced January 2021.

Comments: 13 pages and 4 figures in the main text. Supplementary materials included

Separated transport relaxation scales and interband scattering in SrRuO$_3$, CaRuO$_3$, and Sr$_2$RuO$_4$ thin films

Authors: Youcheng Wang, H. P. Nair, N. J. Schreiber, J. P. Ruf, Bing Cheng, D. G. Schlom, K. M. Shen, N. P. Armitage

Abstract: The anomalous charge transport observed in some strongly correlated metals raises questions as to the universal applicability of Landau Fermi liquid theory. The coherence temperature $T_{FL}$ for normal metals is usually taken to be the temperature below which $T^2$ is observed in the resistivity. Below this temperature, a Fermi liquid with well-defined quasiparticles is expected. However, metalli… ▽ More The anomalous charge transport observed in some strongly correlated metals raises questions as to the universal applicability of Landau Fermi liquid theory. The coherence temperature $T_{FL}$ for normal metals is usually taken to be the temperature below which $T^2$ is observed in the resistivity. Below this temperature, a Fermi liquid with well-defined quasiparticles is expected. However, metallic ruthenates in the Ruddlesden-Popper family, frequently show non-Drude low-energy optical conductivity and unusual $ω/T$ scaling, despite the frequent observation of $T^2$ dc resistivity. Herein we report time-domain THz spectroscopy measurements of several different high-quality metallic ruthenate thin films and show that the optical conductivity can be interpreted in more conventional terms. In all materials, the conductivity has a two-Drude peak lineshape at low temperature and a crossover to a one-Drude peak lineshape at higher temperatures. The two-component low-temperature conductivity is indicative of two well-separated current relaxation rates for different conduction channels. We discuss three particular possibilities for the separation of rates: (a) Strongly energy-dependent inelastic scattering; (b) an almost-conserved pseudomomentum operator that overlaps with the current, giving rise to the narrower Drude peak; (c) the presence of multiple conduction channels that undergoes a crossover to stronger interband scattering at higher temperatures. None of these scenarios require the existence of exotic quasiparticles. The results may give insight into the possible significance of Hund's coupling in determining interband coupling in these materials. Our results also show a route towards understanding the violation of Matthiessen's rule in this class of materials and deviations from the "Gurzhi" scaling relations in Fermi liquids. △ Less

Submitted 23 December, 2020; originally announced December 2020.

Comments: 8 figures. No Supplemental Materials

Journal ref: Phys. Rev. B 103, 205109 (2021)

The Breakdown of Mott Physics at VO$_2$ Surfaces

Authors: Matthew J. Wahila, Nicholas F. Quackenbush, Jerzy T. Sadowski, Jon-Olaf Krisponeit, Jan Ingo Flege, Richard Tran, Shyue ** Ong, Christoph Schlueter, Tien-Lin Lee, Megan E. Holtz, David A. Muller, Hanjong Paik, Darrell G. Schlom, Wei-Cheng Lee, Louis F. J. Piper

Abstract: Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Usin… ▽ More Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Using synchrotron-based x-ray spectroscopy, low energy electron diffraction (LEED), low energy electron microscopy (LEEM), transmission electron microscopy (TEM), and several other experimental techniques, we show that suppression of the bulk structural transition is a common feature at VO$_2$ surfaces. Our density functional theory (DFT) calculations further suggest that this is due to inherent reconstructions necessary to stabilize the surface, which deviate the electronic structure away from the bulk d$^1$ configuration. Our findings have broader ramifications not only for the characterization of other "Mott-like" MITs, but also for any potential device applications of such materials. △ Less

Submitted 9 December, 2020; originally announced December 2020.

Terahertz Electrodynamics of Mixed-Valent YbAl$_3$ and LuAl$_3$ Thin Films

Authors: D. Barbalas, S. Chatterjee, D. G. Schlom, K. M. Shen, N. P. Armitage

Abstract: We present THz measurements of thin films of mixed-valent YbAl$_3$ and its structural analogue LuAl$_3$. Combined with traditional Fourier transform infrared (FTIR) spectroscopy, the extended Drude formalism is utilized to study the low-frequency transport of these materials. We find that LuAl$_3$ demonstrates conventional Drude transport whereas at low temperatures YbAl$_3$ demonstrates a sharply… ▽ More We present THz measurements of thin films of mixed-valent YbAl$_3$ and its structural analogue LuAl$_3$. Combined with traditional Fourier transform infrared (FTIR) spectroscopy, the extended Drude formalism is utilized to study the low-frequency transport of these materials. We find that LuAl$_3$ demonstrates conventional Drude transport whereas at low temperatures YbAl$_3$ demonstrates a sharply renormalized Drude peak and a mid-infrared (MIR) peak in the conductivity, indicative of the formation of a heavy Fermi liquid. In YbAl$_3$ the extended Drude framework shows a consistency of the scattering rate with Fermi-liquid behavior below $T < 40$ K and a moderate mass enhancement. While a $ω^2$ Fermi liquid-like frequency dependence is not clearly exhibited, the temperature dependence of the Drude scattering rate and effective mass is consistent with the formation of a low-temperature moderately heavy Fermi liquid, albeit one with a smaller mass than observed in single crystals. The extended Drude analysis also supports a slow crossover between the Fermi liquid state and the normal state in YbAl$_3$. △ Less

Submitted 17 March, 2021; v1 submitted 4 December, 2020; originally announced December 2020.

Comments: 8 pages, 8 figures

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

Abstract: This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the a… ▽ More This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. △ Less

Submitted 30 October, 2020; originally announced November 2020.

Comments: 15 pages, 12 figures

a-axis YBa2Cu3O7-x/PrBa2Cu3O7-x/YBa2Cu3O7-x trilayers with subnanometer rms roughness

Authors: Y. Eren Suyolcu, Jiaxin Sun, Berit H. Goodge, Jisung Park, Jürgen Schubert, Lena F. Kourkoutis, Darrell G. Schlom

Abstract: We demonstrate a-axis YBa2Cu3O7-x/PrBa2Cu3O7-x/YBa2Cu3O7-x trilayers grown on (100) LaAlO3 substrates with improved interface smoothness. The trilayers are synthesized by ozone-assisted molecular-beam epitaxy. The thickness of the PrBa2Cu3O7-x layer is held constant at 8 nm and the thickness of the YBa2Cu3O7-x layers is varied from 24 nm to 100 nm. X-ray diffraction measurements show all trilayers… ▽ More We demonstrate a-axis YBa2Cu3O7-x/PrBa2Cu3O7-x/YBa2Cu3O7-x trilayers grown on (100) LaAlO3 substrates with improved interface smoothness. The trilayers are synthesized by ozone-assisted molecular-beam epitaxy. The thickness of the PrBa2Cu3O7-x layer is held constant at 8 nm and the thickness of the YBa2Cu3O7-x layers is varied from 24 nm to 100 nm. X-ray diffraction measurements show all trilayers to have >95% a-axis content. The rms roughness of the thinnest trilayer is < 0.7 nm and this roughness increases with the thickness of the YBa2Cu3O7-x layers. The thickness of the YBa2Cu3O7-x layers also affects the transport properties: while all samples exhibit an onset of the superconducting transition at and above 85 K, the thinner samples show wider transition widths, ΔTc. High-resolution scanning transmission electron microscopy reveals coherent and chemically sharp interfaces, and that growth begins with a cubic (Y,Ba)CuO3-x perovskite phase that transforms into a-axis oriented YBa2Cu3O7-x as the substrate temperature is ramped up. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Comments: Manuscript: 21 pages, 5 figures; supplementary materials: 12 pages, 1 table, 10 supplementary figures

Incoherent Cooper pairing and pseudogap behavior in single-layer FeSe/SrTiO$_3$

Authors: Brendan D. Faeth, Shuolong Yang, Jason K. Kawasaki, Jocienne N. Nelson, Pramita Mishra, Li Chen, Darrell G. Schlom, Kyle M. Shen

Abstract: In many unconventional superconductors, the presence of a pseudogap - a suppression in the electronic density of states extending above the critical temperature - has been a long-standing mystery. Here, we employ combined \textit{in situ} electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements to reveal an unprecedentedly large pseudogap regime in single-layer FeSe/… ▽ More In many unconventional superconductors, the presence of a pseudogap - a suppression in the electronic density of states extending above the critical temperature - has been a long-standing mystery. Here, we employ combined \textit{in situ} electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements to reveal an unprecedentedly large pseudogap regime in single-layer FeSe/SrTiO$_3$, an interfacial superconductor where incoherent Cooper pairs are initially formed above $T_Δ$ $\approx$ 60 K, but where a zero resistance state is only achieved below $T_{0}$ $<$ 30 K. We show that this behavior is accompanied by distinct transport signatures of two-dimensional phase fluctuating superconductivity, suggesting a mixed vortex state hosting incoherent Cooper pairs which persist well above the maximum clean limit $T_{c}$ of $\approx$ 40 K. Our work establishes the critical role of reduced dimensionality in driving the complex interplay between Cooper pairing and phase coherence in two-dimensional high-$T_c$ superconductors, providing a paradigm for understanding and engineering higher-$T_{c}$ interfacial superconductors. △ Less

Submitted 22 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. X 11, 021054 (2021)

Inhomogeneous ferromagnetism mimics signatures of the topological Hall effect in SrRuO$_3$ films

Authors: Gideok Kim, K. Son, Y. E. Suyolcu, L. Miao, N. J. Schreiber, H. P. Nair, D. Putzky, M. Minola, G. Christiani, P. A. van Aken, K. M. Shen, D. G. Schlom, G. Logvenov, B. Keimer

Abstract: Topological transport phenomena in magnetic materials are a major topic of current condensed matter research. One of the most widely studied phenomena is the ``topological Hall effect'' (THE), which is generated via spin-orbit interactions between conduction electrons and topological spin textures such as skyrmions. We report a comprehensive set of Hall effect and magnetization measurements on epi… ▽ More Topological transport phenomena in magnetic materials are a major topic of current condensed matter research. One of the most widely studied phenomena is the ``topological Hall effect'' (THE), which is generated via spin-orbit interactions between conduction electrons and topological spin textures such as skyrmions. We report a comprehensive set of Hall effect and magnetization measurements on epitaxial films of the prototypical ferromagnetic metal SrRuO$_3$ the magnetic and transport properties of which were systematically modulated by varying the concentration of Ru vacancies. We observe Hall effect anomalies that closely resemble signatures of the THE, but a quantitative analysis demonstrates that they result from inhomogeneities in the ferromagnetic magnetization caused by a non-random distribution of Ru vacancies. As such inhomogeneities are difficult to avoid and are rarely characterized independently, our results call into question the identification of topological spin textures in numerous prior transport studies of quantum materials, heterostructures, and devices. Firm conclusions regarding the presence of such textures must meet stringent conditions such as probes that couple directly to the non-collinear magnetization on the atomic scale. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Journal ref: Physical Review Materials 4, 104410 (2020)

Unraveling the role of V-V dimer on the vibrational properties of VO$_2$ by first-principles simulations and Raman spectroscopic analysis

Authors: Wasim Raja Mondal, Egor Evlyukhin, Sebastian A. Howard, Galo J. Paez, Hanjong Paik, Darrell G. Schlom, Louis F J Piper, Wei-Cheng Lee

Abstract: We investigate the vibrational properties of VO2, particularly the low temperature M1 phase by first-principles calculations using the density functional theory as well as Raman spectroscopy. We perform the structural optimization using SCAN meta-GGA functional and obtain the optimized crystal structures for metallic rutile and insulating M1 phases satisfying all expected features of the experimen… ▽ More We investigate the vibrational properties of VO2, particularly the low temperature M1 phase by first-principles calculations using the density functional theory as well as Raman spectroscopy. We perform the structural optimization using SCAN meta-GGA functional and obtain the optimized crystal structures for metallic rutile and insulating M1 phases satisfying all expected features of the experimentally derived structures. Based on the harmonic approximation around the optimized structures at zero temperature, we calculate the phonon properties and compare our results with experiments. We show that our calculated phonon density of states is in excellent agreement with the previous neutron scattering experiment. Moreover, we reproduce the phonon softening in the rutile phase as well as the phonon stiffening in the M1 phase. By comparing with the Raman experiments, we find that the Raman-active vibration modes of the M1 phase is strongly correlated with the V-V dimer distance of the crystal structure. Our combined theoretical and experimental framework demonstrates that Raman spectroscopy could serve as a reliable way to detect the subtle change of V-V dimer in the strained VO$_2$. △ Less

Submitted 19 August, 2020; originally announced August 2020.

Comments: 12 figures

Journal ref: Phys. Rev. B 103, 214107 (2021)

An Ising Hamiltonian Solver using Stochastic Phase-Transition Nano- Oscillators

Authors: Sourav Dutta, Abhishek Khanna, Adou S. Assoa, Hanjong Paik, Darrell Schlom, Zoltan Toroczkai, Arijit Raychowdhury, Suman Datta

Abstract: Computationally hard problems, including combinatorial optimization, can be mapped into the problem of finding the ground-state of an Ising Hamiltonian. Building physical systems with collective computational ability and distributed parallel processing capability can accelerate the ground-state search. Here, we present a continuous-time dynamical system (CTDS) approach where the ground-state solut… ▽ More Computationally hard problems, including combinatorial optimization, can be mapped into the problem of finding the ground-state of an Ising Hamiltonian. Building physical systems with collective computational ability and distributed parallel processing capability can accelerate the ground-state search. Here, we present a continuous-time dynamical system (CTDS) approach where the ground-state solution appears as stable points or attractor states of the CTDS. We harness the emergent dynamics of a network of phase-transition nano-oscillators (PTNO) to build an Ising Hamiltonian solver. The hardware fabric comprises of electrically coupled injection-locked stochastic PTNOs with bi-stable phases emulating artificial Ising spins. We demonstrate the ability of the stochastic PTNO-CTDS to progressively find more optimal solution by increasing the strength of the injection-locking signal - akin to performing classical annealing. We demonstrate in silico that the PTNO-CTDS prototype solves a benchmark non-deterministic polynomial time (NP)-hard Max-Cut problem with high probability of success. Using experimentally calibrated numerical simulations and incorporating non-idealities, we investigate the performance of our Ising Hamiltonian solver on dense Max-Cut problems with increasing graph size. We report a high energy-efficiency of 1.3x10^7 solutions/sec/Watt for 100-node dense Max-cut problems which translates to a 5x improvement over the recently demonstrated memristor-based Hopfield network and several orders of magnitude improvement over other candidates such as CPU and GPU, quantum annealer and photonic Ising solver approaches. Such an energy efficient hardware exhibiting high solution-throughput/Watt can find applications in industrial planning and manufacturing, defense and cyber-security, bioinformatics and drug discovery. △ Less

Submitted 28 February, 2021; v1 submitted 23 July, 2020; originally announced July 2020.

Comments: 23 pages, 6 figures, 1 table

Dimensionality-induced change in topological order in multiferroic oxide superlattices

Authors: Megan E. Holtz, Elliot S. Padgett, Rachel Steinhardt, Charles M. Brooks, Dennis Meier, Darrell G. Schlom, David A. Muller, Julia A. Mundy

Abstract: We construct ferroelectric (LuFeO3)m/(LuFe2O4) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO3 layers, the volume fraction of domain walls grows, lowering the symmetry from P63cm to P3c1 before reaching the non-polar… ▽ More We construct ferroelectric (LuFeO3)m/(LuFe2O4) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO3 layers, the volume fraction of domain walls grows, lowering the symmetry from P63cm to P3c1 before reaching the non-polar P63/mmc state, analogous to the high-temperature ferroelectric to paraelectric transition. Our study shows how dimensional confinement stabilizes textures beyond those in bulk ferroelectric systems. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 126, 157601 (2021)

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Authors: Riena **no, Celesta S. Chang, Takeyoshi Onuma, Yong** Cho, Shao-Ting Ho, Michael C. Cao, Kevin Lee, Vladimir Protasenko, Darrell G. Schlom, David A. Muller, Huili G. Xing, Debdeep Jena

Abstract: Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi… ▽ More Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date. △ Less

Submitted 16 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 22 pages, 8 figures

Role of Dirac nodal lines and strain on the high spin Hall conductivity of epitaxial IrO2 thin films

Authors: Arnab Bose, Jocienne N. Nelson, Xiyue S. Zhang, Rakshit Jain, D. G. Schlom, D. C. Ralph, D. A. Muller, K. M. Shen, R. A. Buhrman

Abstract: Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fund… ▽ More Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fundamental studies of the spin currents that can arise from robust, intrinsic spin-orbit interaction (SOI) effects in more exotic systems including topological insulators, transition metal dichalcogenides with broken crystalline symmetry, Weyl and Dirac semimetals where gapless electronic excitations are protected by topology and symmetry. Here we experimentally study strong SOT from the topological semimetal IrO2 in (001) and (110) normal films, which exhibit distinctly different SHE strengths. Angle resolved photoemission spectroscopy studies have shown IrO2 exhibits Dirac nodal lines (DNL) in the band structure, which could enable a very high spin Hall conductivity (SHC). The (001) films exhibit exceptionally high dam** like torque efficiency ranging from 0.45 at 293 K to 0.65 at 30 K which sets the lower bound of SHC that is ten times higher and of opposite sign than the theoretical prediction. We observe a substantial reduction of SHC in anisotropically strained (110) films, which suggests that the DNLs that are present in the (001) films and contribute to SHC, are disrupted and gapped due to the large anisotropic strain in (110) films, which in turn significantly lowers SHC. Very large value of SHC at room temperature of this Dirac semimetal could be very promising for the practical application. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Journal ref: Applied Materials and Interfaces 2020