Showing 1–8 of 8 results for author: Sayed, S

Connecting physics to systems with modular spin-circuits

Authors: Kemal Selcuk, Saleh Bunaiyan, Nihal Sanjay Singh, Shehrin Sayed, Samiran Ganguly, Giovanni Finocchio, Supriyo Datta, Kerem Y. Camsari

Abstract: An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective we present physics-based, experime… ▽ More An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective we present physics-based, experimentally benchmarked modular circuit models that can be used to evaluate a class of CMOS + $\sf X$ systems, where $\sf X$ denotes magnetic and spintronic materials and phenomena. This class of materials is particularly challenging because they go beyond conventional charge-based phenomena and involve the spin degree of freedom which involves non-trivial quantum effects. Starting from density matrices $-$ the central quantity in quantum transport $-$ using well-defined approximations, it is possible to obtain spin-circuits that generalize ordinary circuit theory to 4-component currents and voltages (1 for charge and 3 for spin). With step-by-step examples that progressively go higher in the computing stack, we illustrate how the spin-circuit approach can be used to start from the physics of magnetism and spintronics to enable accurate system-level evaluations. We believe the core approach can be extended to include other quantum degrees of freedom like valley and pseudospins starting from corresponding density matrices. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Topological Edge Conduction Induced by Strong Anisotropic Exchange Interactions

Authors: Shehrin Sayed, Pratik Brahma, Cheng-Hsiang Hsu, Sayeef Salahuddin

Abstract: We predict that an interplay between isotropic and anisotropic exchange interactions in a honeycomb lattice structure can lead to topological edge conduction when the anisotropic interaction is at least twice the strength of the isotropic interaction. For materials like Na$_2$IrO$_3$, such a strong anisotropic exchange interaction simultaneously induces a zigzag type of antiferromagnetic order tha… ▽ More We predict that an interplay between isotropic and anisotropic exchange interactions in a honeycomb lattice structure can lead to topological edge conduction when the anisotropic interaction is at least twice the strength of the isotropic interaction. For materials like Na$_2$IrO$_3$, such a strong anisotropic exchange interaction simultaneously induces a zigzag type of antiferromagnetic order that breaks the time-reversal symmetry of the topological edge conductor. We show that the electronic transport in such topological conductors will exhibit a quantized Hall conductance without any external magnetic field when the Fermi energy lies within a particular energy range. △ Less

Submitted 16 December, 2022; originally announced December 2022.

Multifunctional Spin Logic Gates In Graphene Spin Circuits

Authors: Dmitrii Khokhriakov, Shehrin Sayed, Anamul Md. Hoque, Bogdan Karpiak, Bing Zhao, Supriyo Datta, Saroj P. Dash

Abstract: All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with all-electrical spin current communication has so far remained challenging. Here, we experimentally demonstrate a reprogrammable all-electrical multifunctional spin… ▽ More All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with all-electrical spin current communication has so far remained challenging. Here, we experimentally demonstrate a reprogrammable all-electrical multifunctional spin logic gate in a nanoelectronic device architecture utilizing graphene buses for spin communication and multiplexing and nanomagnets for writing and reading information at room temperature. This gate realizes a multistate majority spin logic operation (sMAJ), which is reconfigured to achieve XNOR, (N)AND, and (N)OR Boolean operations depending on the magnetization of inputs. Physics-based spin circuit model is developed to understand the underlying mechanisms of the multifunctional spin logic gate and its operations. These demonstrations provide a platform for scalable all-electric spin logic and neuromorphic computing in the all-spin domain logic-in-memory architecture. △ Less

Submitted 27 August, 2021; originally announced August 2021.

Unified Framework for Charge-Spin Interconversion in Spin-Orbit Materials

Authors: Shehrin Sayed, Seokmin Hong, Xiaoxi Huang, Lucas Caretta, Arnoud S. Everhardt, Ramamoorthy Ramesh, Sayeef Salahuddin, Supriyo Datta

Abstract: Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied, including topological insulators, transition metals, Kondo insulators, semimetals, semiconductors, and oxides; however, there is no unifying physical framework for… ▽ More Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied, including topological insulators, transition metals, Kondo insulators, semimetals, semiconductors, and oxides; however, there is no unifying physical framework for understanding the physics and therefore designing a material system and devices with the desired properties. We present a model that binds together the experimental data observed on the wide variety of materials in a unified manner. We show that in a material with a given spin-momentum locking, the density of states plays a crucial role in determining the charge-spin interconversion efficiency, and a simple inverse relationship can be obtained. Remarkably, experimental data obtained over the last decade on many different materials closely follow such an inverse relationship. We further deduce two figure-of-merits of great current interest: the spin-orbit torque (SOT) efficiency (for the direct effect) and the inverse Rashba-Edelstein effect length (for the inverse effect), which statistically show good agreement with the existing experimental data on wide varieties of materials. Especially, we identify a scaling law for the SOT efficiency with respect to the carrier concentration in the sample, which agrees with existing data. Such an agreement is intriguing since our transport model includes only Fermi surface contributions and fundamentally different from the conventional views of the SOT efficiency that includes contributions from all the occupied states. △ Less

Submitted 30 April, 2021; v1 submitted 4 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Applied 15, 054004 (2021)

Spin-orbit torque generated by amorphous Fe$_{x}$Si$_{1-x}$

Authors: Cheng-Hsiang Hsu, Julie Karel, Niklas Roschewsky, Suraj Cheema, Dinah Simone Bouma, Shehrin Sayed, Frances Hellman, Sayeef Salahuddin

Abstract: While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of bulk lattice inversion symmetry breaking. Here we report the observation of spin-orbit torque in an amorphous, non-ferromagnetic Fe$_{x}$Si$_{1-x}$ / cobalt bil… ▽ More While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of bulk lattice inversion symmetry breaking. Here we report the observation of spin-orbit torque in an amorphous, non-ferromagnetic Fe$_{x}$Si$_{1-x}$ / cobalt bilayer at room temperature, using spin torque ferromagnetic resonance and harmonic Hall measurements. Both techniques provide a minimum spin torque efficiency of about 3 %, comparable to prototypical heavy metals such as Pt or Ta. According to the conventional theory of the spin Hall effect, a spin current in an amorphous material is not expected to have any substantial contribution from the electronic bandstructure. This, combined with the fact that Fe$_{x}$Si$_{1-x}$ does not contain any high-Z element, paves a new avenue for understanding the underlying physics of spin-orbit interaction and opens up a new class of material systems - silicides - that is directly compatible with complementary metal-oxide-semiconductor (CMOS) processes for integrated spintronics applications. △ Less

Submitted 13 June, 2020; originally announced June 2020.

Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching

Authors: Shehrin Sayed, Cheng-Hsiang Hsu, Niklas Roschewsky, See-Hun Yang, Sayeef Salahuddin

Abstract: We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer material known for exhibiting large IEC. The basic idea relies on the formation of a quantum-well (QW) within the spacer material and controlling the transmissio… ▽ More We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer material known for exhibiting large IEC. The basic idea relies on the formation of a quantum-well (QW) within the spacer material and controlling the transmission coefficient across the structure with an electric-field via the resonant tunneling phenomena. Using non-equilibrium Green's function (NEGF) method, we show that the structure can exhibit a bias-dependent oscillatory IEC that can switch the free magnet to have either a parallel or an antiparallel configuration with respect to the fixed magnet, depending on the sign of the IEC. Such bi-directional switching can be achieved with the same voltage polarity but different magnitudes. With proper choice of the spacer material, the current in the structure can be significantly reduced. Due to the conservative nature of the exerted torque by the IEC, the switching threshold of the proposed mechanism is decoupled from the switching speed, while the conventional spin-torque devices exhibit a trade-off due to the non-conservative nature of the exerted torque. △ Less

Submitted 31 October, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Applied 14, 034070 (2020)

Rectification in Spin-Orbit Materials Using Low Energy Barrier Magnets

Authors: Shehrin Sayed, Kerem Y. Camsari, Rafatul Faria, Supriyo Datta

Abstract: The coupling of spin-orbit materials to high energy barrier ($\sim$40-60 $k_BT$) nano-magnets has attracted growing interest for exciting new physics and various spintronic applications. We predict that a coupling between the spin-momentum locking (SML) observed in spin-orbit materials and low-energy barrier magnets (LBM) should exhibit a unique multi-terminal rectification for arbitrarily small a… ▽ More The coupling of spin-orbit materials to high energy barrier ($\sim$40-60 $k_BT$) nano-magnets has attracted growing interest for exciting new physics and various spintronic applications. We predict that a coupling between the spin-momentum locking (SML) observed in spin-orbit materials and low-energy barrier magnets (LBM) should exhibit a unique multi-terminal rectification for arbitrarily small amplitude channel currents. The basic idea is to measure the charge current induced spin accumulation in the SML channel in the form of a magnetization dependent voltage using an LBM, either with an in-plane or perpendicular anisotropy (IMA or PMA). The LBM feels an instantaneous spin-orbit torque due to the accumulated spins in the channel which causes the average magnetization to follow the current, leading to the non-linear rectification. We discuss the frequency band of this multi-terminal rectification which can be understood in terms of the angular momentum conservation in the LBM. For a fixed spin-current from the SML channel, the frequency band is same for LBMs with IMA and PMA, as long as they have the same total magnetic moment in a given volume. The proposed all-metallic structure could find application as highly sensitive passive rf detectors and as energy harvesters from weak ambient sources where standard technologies may not operate. △ Less

Submitted 27 May, 2019; v1 submitted 1 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Applied 11, 054063 (2019)

Transmission Line Model for Materials with Spin-Momentum Locking

Authors: Shehrin Sayed, Seokmin Hong, Supriyo Datta

Abstract: We provide a transmission line representation for channels exhibiting spin-momentum locking (SML) which can be used for both time-dependent and steady-state transport analysis on a wide variety of materials with spin-orbit coupling such as topological insulators, heavy metals, oxide interfaces, and narrow bandgap semiconductors. This model is based on a time-dependent four-component diffusion equa… ▽ More We provide a transmission line representation for channels exhibiting spin-momentum locking (SML) which can be used for both time-dependent and steady-state transport analysis on a wide variety of materials with spin-orbit coupling such as topological insulators, heavy metals, oxide interfaces, and narrow bandgap semiconductors. This model is based on a time-dependent four-component diffusion equation obtained from the Boltzmann transport equation assuming linear response and elastic scattering in the channel. We classify all electronic states in the channel into four groups ($U^+$, $D^+$, $U^-$, and $D^-$) depending on the spin index (up ($U$), down ($D$)) and the sign of the $x$-component of the group velocity ($+,-$) and assign an average electrochemical potential to each of the four groups to obtain the four-component diffusion equation. For normal metal channels, the model decouples into the well-known transmission line model for charge and a time-dependent version of Valet-Fert equation for spin. We first show that in the steady-state limit our model leads to simple expressions for charge-spin interconversion in SML channels in good agreement with existing experimental data on diverse materials. We then use the full time-dependent model to study spin-charge separation in the presence of SML, a subject that has been controversial in the past. Our model shows that the charge and spin signals travel with two distinct velocities resulting in well-known spin-charge separation which is expected to persist even in the presence of SML. However, our model predicts that the lower velocity signal is purely spin while the higher velocity signal is largely charge with an additional spin component which has not been noted before. Finally, we note that our model can be used within standard circuit simulators like SPICE to obtain numerical results for complex geometries. △ Less

Submitted 4 October, 2018; v1 submitted 13 July, 2017; originally announced July 2017.

Journal ref: Phys. Rev. Applied 10, 054044 (2018)