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Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications
Authors:
Dolly Taparia,
Taisuke T. Sasaki,
Tomoya Nakatani,
Hirofumi Suto,
Seiji Mitani,
Yuya Sakuraba
Abstract:
To utilize half-metallic Heusler alloys in practical spintronic devices, such as magnetic sensors and magnetic memories, the key is to realize highly textured and structurally ordered polycrystalline thin films. In this study, we fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into Ar during t…
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To utilize half-metallic Heusler alloys in practical spintronic devices, such as magnetic sensors and magnetic memories, the key is to realize highly textured and structurally ordered polycrystalline thin films. In this study, we fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into Ar during the sputtering process, on a thermally oxidized Si substrate. We obtained strongly [001]-oriented CFGG films with B2 ordering and a high saturation magnetization close to the theoretical value, which can provide highly spin-polarized electric and spin current sources in spintronic devices with industrial viability.
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Submitted 14 May, 2024;
originally announced May 2024.
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Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection
Authors:
Z. H. Li,
H. Suto,
V. Barwal,
K. Masuda,
T. T. Sasaki,
Z. X. Chen,
H. Tajiri,
L. S. R. Kumara,
T. Koganezawa,
K. Amemiya,
S. Kokado,
K. Hono,
Y. Sakuraba
Abstract:
Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarizati…
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Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarization derived from a pseudo band gap in the majority spin channel. The Mn2+xV1-xGa films epitaxially grown on MgO(001) substrates exhibits variations of B2 and L21 order with the Mn concentration. A high-quality L21 ordered film was achieved in the Mn-rich composition (x = +0.2) with B2 and L21 order parameters of 0.97 and 0.86, respectively, and a saturation magnetization of 1.4 μB/f.u, which agrees the Slater-Pauling rule. Scanning transmission electron microscopy observations showed that B2 and L21 phases coexist in Mn-poor and stoichiometric films, while the L21 phase is dominant in the Mn-rich film with small amounts of Mn-V and Mn-Ga disorders, as revealed by laboratory and anomalous X-ray diffraction. Combined first-principles calculations and anisotropic magnetoresistance analysis confirm that the addition of excess Mn preserves the high spin polarization by suppressing the formation of detrimental antisites of V atoms occupying Mn sites. Therefore, the Mn-rich composition is promising for negatively spin-polarized charge injection in Mn2VGa-based spintronic applications.
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Submitted 10 May, 2024;
originally announced May 2024.
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Rapid and Robust construction of an ML-ready peak feature table from X-ray diffraction data using Bayesian peak-top fitting
Authors:
Ryo Murakami,
Taisuke T. Sasaki,
Hideki Yoshikawa,
Yoshitaka Matsushita,
Keitaro Sodeyama,
Tadakatsu Ohkubo,
Hiroshi Shinotsuka,
Kenji Nagata
Abstract:
To advance the development of materials through data-driven scientific methods, appropriate methods for building machine learning (ML)-ready feature tables from measured and computed data must be established. In materials development, X-ray diffraction (XRD) is an effective technique for analysing crystal structures and other microstructural features that have information that can explain material…
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To advance the development of materials through data-driven scientific methods, appropriate methods for building machine learning (ML)-ready feature tables from measured and computed data must be established. In materials development, X-ray diffraction (XRD) is an effective technique for analysing crystal structures and other microstructural features that have information that can explain material properties. Therefore, the fully automated extraction of peak features from XRD data without the bias of an analyst is a significant challenge. This study aimed to establish an efficient and robust approach for constructing peak feature tables that follow ML standards (ML-ready) from XRD data. We challenge peak feature extraction in the situation where only the peak function profile is known a priori, without knowledge of the measurement material or crystal structure factor. We utilized Bayesian estimation to extract peak features from XRD data and subsequently performed Bayesian regression analysis with feature selection to predict the material property. The proposed method focused only on the tops of peaks within localized regions of interest (ROIs) and extracted peak features quickly and accurately. This process facilitated the rapid extracting of major peak features from the XRD data and the construction of an ML-ready feature table. We then applied Bayesian linear regression to the maximum energy product $(BH)_{max}$, using the extracted peak features as the explanatory variable. The outcomes yielded reasonable and robust regression results. Thus, the findings of this study indicated that \textit{004} peak height and area were important features for predicting $(BH)_{max}$.
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Submitted 6 February, 2024;
originally announced March 2024.
