Showing 1–50 of 83 results for author: Sasaki, S

NbSe$_{2}$'s charge density wave collapse in the (LaSe)$_{1.14}$(NbSe$_{2}$)$_{2}$ misfit layer compound

Authors: Ludovica Zullo, Grégory Setnikar, Amit Pawbake, Tristan Cren, Christophe Brun, Justine Cordiez, Shunsuke Sasaki, Laurent Cario, Giovanni Marini, Matteo Calandra, Marie-Aude Méasson

Abstract: Misfit layer compounds, heterostructures composed by a regular alternating stacking of rocksalt monochalcogenides bilayers and few-layer transition metal dichalchogenides, are an emergent platform to investigate highly doped transition metal dichalcogenides. Among them, (LaSe)$_{1.14}$(NbSe$_2$)$_2$ displays Ising superconductivity, while the presence of a charge density wave (CDW) in the material… ▽ More Misfit layer compounds, heterostructures composed by a regular alternating stacking of rocksalt monochalcogenides bilayers and few-layer transition metal dichalchogenides, are an emergent platform to investigate highly doped transition metal dichalcogenides. Among them, (LaSe)$_{1.14}$(NbSe$_2$)$_2$ displays Ising superconductivity, while the presence of a charge density wave (CDW) in the material is still under debate. Here, by using polarized Raman spectroscopy and first-principles calculations, we show that NbSe$_2$ undergoes a do**-driven collapse of the CDW ordering within the misfit, and no signature of the CDW is detected down to 8~K. We provide a complete experimental and theoretical description of the lattice dynamics of this misfit compound. We show that the vibrational properties are obtained from those of the two subunits, namely the LaSe unit and the NbSe$_2$ bilayer, in the presence of a suitable field-effect do**, and then highlight the 2D nature of the lattice dynamics of NbSe$_2$ within the (LaSe)$_{1.14}$(NbSe$_2$)$_2$ 3D structure. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: First version of the manuscript (before revisions)

On-chip transfer of ultrashort graphene plasmon wavepackets using terahertz electronics

Authors: Katsumasa Yoshioka, Guillaume Bernard, Taro Wakamura, Masayuki Hashisaka, Ken-ichi Sasaki, Satoshi Sasaki, Kenji Watanabe, Takashi Taniguchi, Norio Kumada

Abstract: Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulat… ▽ More Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulating, and reading out terahertz graphene plasmon-polariton wavepackets on-chip. By injecting an electrical pulse into graphene via an ohmic contact, we achieve coherent conversion of the pulse into a plasmon wavepacket exhibiting a pulse duration of 1.2 ps and extreme three-dimensional spatial confinement within a volume of $2.1 \times 10^{-18} m^3$. We reveal the transport properties of plasmons along graphene ribbons in different dielectric environments, providing a basis for designing graphene plasmonic circuits. Furthermore, we find that the conversion efficiency between the electrical pulses and plasmon wavepackets reaches ~30% thanks to the absence of a momentum mismatch. With unprecedented controllability, our platform represents a significant advance in on-chip handling of plasmonic signals in various van der Waals heterostructures. △ Less

Submitted 5 November, 2023; originally announced November 2023.

Comments: 19 pages, 5 figures, Supplementary information

Protection of Ising spin-orbit coupling in bulk misfit superconductors

Authors: Tomas Samuely, Darshana Wickramaratne, Martin Gmitra, Thomas Jaouen, Ondrej Šofranko, Dominik Volavka, Marek Kuzmiak, Jozef Haniš, Pavol Szabó, Claude Monney, Geoffroy Kremer, Patrick Le Fèvre, François Bertran, Tristan Cren, Shunsuke Sasaki, Laurent Cario, Matteo Calandra, Igor I. Mazin, Peter Samuely

Abstract: Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plan… ▽ More Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plane. Bulk NbSe2 is centrosymmetric and is therefore not an Ising superconductor. We show that bulk misfit compound superconductors, (LaSe)1.14(NbSe2) and (LaSe)1.14(NbSe2)2, comprised of monolayers and bilayers of NbSe2, exhibit unexpected Ising protection with a Pauli-limit violation comparable to monolayer NbSe2, despite formally having inversion symmetry. We study these misfit compounds using complementary experimental methods in combination with first-principles calculations. We propose theoretical mechanisms of how the Ising protection can survive in bulk materials. We show how some of these mechanisms operate in these bulk compounds due to a concerted effect of charge-transfer, defects, reduction of interlayer hop**, and stacking. This highlights how Ising superconductivity can, unexpectedly, arise in bulk materials, and possibly enable the design of bulk superconductors that are resilient to magnetic fields. △ Less

Submitted 6 April, 2023; originally announced April 2023.

Comments: 14 pages, 4 figures, 4 extended data items

Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase

Authors: Masayuki Hashisaka, Takuya Ito, Takafumi Akiho, Satoshi Sasaki, Norio Kumada, Naokazu Shibata, Koji Muraki

Abstract: Couplings between topological edge channels open electronic phases possessing nontrivial eigenmodes far beyond the noninteracting-edge picture. However, inelastic scatterings mask the eigenmodes' inherent features, often preventing us from identifying the phases, as is the case for the quintessential Landau-level filling factor v = 2/3 edge composed of the counter-propagating v = 1/3 and 1 (1/3-1)… ▽ More Couplings between topological edge channels open electronic phases possessing nontrivial eigenmodes far beyond the noninteracting-edge picture. However, inelastic scatterings mask the eigenmodes' inherent features, often preventing us from identifying the phases, as is the case for the quintessential Landau-level filling factor v = 2/3 edge composed of the counter-propagating v = 1/3 and 1 (1/3-1) channels. Here, we study the coherent-incoherent crossover of the 1/3-1 channels by tuning the channel length in-situ using a new device architecture comprising a junction of v = 1/3 and 1 systems, the particle-hole conjugate of the 2/3 edge. We successfully observed the concurrence of the fluctuating electrical conductance and the quantized thermal conductance in the crossover regime, the definitive hallmark of the eigenmodes in the disorder-dominated edge phase left experimentally unverified. △ Less

Submitted 27 December, 2022; originally announced December 2022.

Nuclear-spin evidence of insulating and antiferromagnetic state of CuO2 planes in superconducting Pr2Ba4Cu7O15-δ

Authors: S. Nishioka, S. Sasaki, S. Nakagawa, M. Yashima, H. Mukuda, M. Yogi, J. Shimoyama

Abstract: In contrast to the "Pr-issue" that neither PrBa2Cu3O7 (Pr123) nor PrBa2Cu4O8 (Pr124) shows superconductivity (SC), we have observed 100%-fraction of SC in an oxygen-reduced Pr2Ba4Cu7O(15-delta) (Pr247) which has a hybrid structure that Pr247 = Pr123 + Pr124. It is found that Cu nuclear-spin signals from the CuO2 planes observed at 300K are completely wiped out down at 2K. Instead, plane signals at… ▽ More In contrast to the "Pr-issue" that neither PrBa2Cu3O7 (Pr123) nor PrBa2Cu4O8 (Pr124) shows superconductivity (SC), we have observed 100%-fraction of SC in an oxygen-reduced Pr2Ba4Cu7O(15-delta) (Pr247) which has a hybrid structure that Pr247 = Pr123 + Pr124. It is found that Cu nuclear-spin signals from the CuO2 planes observed at 300K are completely wiped out down at 2K. Instead, plane signals at 2K are observed at higher frequencies. This indicates that, despite the bulk SC, the CuO2 planes in Pr247 are found to be in an insulating and antiferromagnetically ordered state. △ Less

Submitted 20 January, 2022; originally announced January 2022.

Comments: 12 pages, 4 figures

Journal ref: Applied Physics Express 15, 023001 (2022)

Determination of Complex Refractive Index using Prism composed of Absorbing Medium

Authors: Shosuke Sasaki

Abstract: In light refraction between two transparent media, Snell's law describes the relationship between the incident angle and refraction angle. The refractive index is usually determined from Snell's law using the minimum deviation angle through a prism. A medium that partially absorbs light has complex permittivity (or permeability), and its refractive index has an imaginary part. Because of the imagi… ▽ More In light refraction between two transparent media, Snell's law describes the relationship between the incident angle and refraction angle. The refractive index is usually determined from Snell's law using the minimum deviation angle through a prism. A medium that partially absorbs light has complex permittivity (or permeability), and its refractive index has an imaginary part. Because of the imaginary part, Snell's law does not hold for light-absorbing media. Accordingly, other methods is required to determine the complex value of the refractive index in a light-absorbing medium. The exact solution of Maxwell's equations was obtained for light passing through a prism composed of a light-absorbing medium. Thereby the optical path was determined. The difference of optical paths between light-absorbing medium and transparent medium was calculated numerically. The difference is very large in the neighborhood of perfect reflection area of transparent medium. We found two methods to determine the complex value of the refractive index using the optical path. Both methods analyzed the solutions in detail for two specific incident angles. The deviation angles corresponding to the two incident angles determined the complex value of the prism's refractive index. The obtained refractive index is independent of the apex angle of the prism. △ Less

Submitted 9 January, 2022; v1 submitted 26 December, 2021; originally announced December 2021.

Comments: 24 pages, 3 figures, 3 tables

Parity-dependent shot noise and spin-flip relaxation process in a hybrid superconductor-nanowire quantum dot

Authors: Keiko Takase, Yasuhiro Utsumi, Yamato Ashikawa, Guoqiang Zhang, Kouta Tateno, Yuma Okazaki, Satoshi Sasaki

Abstract: We report shot noise measurements for a quantum dot formed in an InAs nanowire suspended between superconducting electrodes. We find a clear alternation for the shot noise value in the Coulomb blockade regime between even and odd electron occupation in the dot, indicating that super-Poissonian (Poissonian) shot noise with the Fano factor reaching around 2 (1) occurs for even (odd) parity. With inc… ▽ More We report shot noise measurements for a quantum dot formed in an InAs nanowire suspended between superconducting electrodes. We find a clear alternation for the shot noise value in the Coulomb blockade regime between even and odd electron occupation in the dot, indicating that super-Poissonian (Poissonian) shot noise with the Fano factor reaching around 2 (1) occurs for even (odd) parity. With increasing magnetic field, the parity effect disappears and all the regimes show the Fano factor of around 1. The whole observation in our experiments quantitatively agrees with simulation obtained from full-counting statistics of cotunneling including spin-flip relaxation process, which corresponds to modelling electron motion in a quantum dot with strong spin-orbit interaction. △ Less

Submitted 29 July, 2021; originally announced July 2021.

Comments: 22 pages, 5 figures

Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

Authors: Keiko Takase, Kouta Tateno, Satoshi Sasaki

Abstract: We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin… ▽ More We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin-orbit coupling is tuned by the gate electrode. The efficiency of the gate tuning of the spin-orbit interaction is higher than those obtained for two-dimensional electron gas, and as high as that for a gate-all-around nanowire metal-oxide-semiconductor field-effect transistor that was previously reported. The spin-orbit interaction is discussed in line with not only conventionally used one-dimensional model but also recently proposed model that considers effects of microscopic band structures of materials. △ Less

Submitted 18 June, 2021; originally announced June 2021.

Comments: 14 pages, 4 figures

Journal ref: Appl. Phys. Lett. 119, 013102 (2021). (Editor's Pick)

Andreev reflection of fractional quantum Hall quasiparticles

Authors: Masayuki Hashisaka, Thibaut Jonckheere, Takafumi Akiho, Satoshi Sasaki, Jerome Rech, Thierry Martin, Koji Muraki

Abstract: Electron correlation in a quantum many-body state appears as peculiar scattering behaviour at its boundary, symbolic of which is Andreev reflection at a metal-superconductor interface. Despite being fundamental in nature, dictated by the charge conservation law, however, the process has had no analogues outside the realm of superconductivity so far. Here, we report the observation of an Andreev-li… ▽ More Electron correlation in a quantum many-body state appears as peculiar scattering behaviour at its boundary, symbolic of which is Andreev reflection at a metal-superconductor interface. Despite being fundamental in nature, dictated by the charge conservation law, however, the process has had no analogues outside the realm of superconductivity so far. Here, we report the observation of an Andreev-like process originating from a topological quantum many-body effect instead of superconductivity. A narrow junction between fractional and integer quantum Hall states shows a two-terminal conductance exceeding that of the constituent fractional state. This remarkable behaviour, while theoretically predicted more than two decades ago but not detected to date, can be interpreted as Andreev reflection of fractionally charged quasiparticles. The observed fractional quantum Hall Andreev reflection provides a fundamental picture that captures microscopic charge dynamics at the boundaries of topological quantum many-body states. △ Less

Submitted 19 May, 2021; originally announced May 2021.

Comments: 13 pages, 4 figures, and supplementary information

Journal ref: Nature Communications 12, 2794 (2021)

Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Authors: Sameh Okasha, Yoshiaki Sekine, Satoshi Sasaki, Yuichi Harada

Abstract: We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant a… ▽ More We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits. △ Less

Submitted 7 June, 2021; v1 submitted 12 January, 2021; originally announced January 2021.

Comments: 13 pages, 3 figures, Accepted manuscript

Misfit layer compounds: a platform for heavily-doped two-dimensional transition metal dichalcogenides

Authors: Raphaël T. Leriche, Alexandra Palacio-Morales, Marco Campetella, Cesare Tresca, Shunsuke Sasaki, Christophe Brun, François Debontridder, Pascal David, Imad Arfaoui, Ondrej Šofranko, Tomas Samuely, Geoffroy Kremer, Claude Monney, Thomas Jaouen, Laurent Cario, Matteo Calandra, Tristan Cren

Abstract: Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by do** in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET do** is limited to $\approx 1\times 10^{14}$ cm$^{-2}$, while a somewha… ▽ More Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by do** in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET do** is limited to $\approx 1\times 10^{14}$ cm$^{-2}$, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing ARPES, STM, quasiparticle interference measurements, and first principles calculations we show that a misfit compound formed by sandwiching NbSe$_2$ and LaSe layers behaves as a NbSe$_2$ single layer with a rigid do** of $0.55-0.6$ electrons per Nb atom or $\approx 6\times 10^{14}$ cm$^{-2}$. Due to this huge do**, the $3\times3$ charge density wave is replaced by a $2\times2$ order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, our work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of do**. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Periodic surface modulation of $(LaSe)_{1.14}(NbSe_2)$ observed by scanning tunneling microscopy

Authors: Ondrej Šofranko, Raphael Leriche, Alexandra Palacio Morales, Tristan Cren, Shunsuke Sasaki, Laurent Cario, Pavol Szabó, Peter Samuely, Tomas Samuely

Abstract: Fourier transformation of atomically resolved STM topography of $(LaSe)_{1.14}(NbSe_2)$ revealed a surface modulation along the hexagonal surface lattice of $NbSe_2$ layer, but with a two times larger period. We compare it to the modified charge density wave found on plain $NbSe_2$ under strain. Fourier transformation of atomically resolved STM topography of $(LaSe)_{1.14}(NbSe_2)$ revealed a surface modulation along the hexagonal surface lattice of $NbSe_2$ layer, but with a two times larger period. We compare it to the modified charge density wave found on plain $NbSe_2$ under strain. △ Less

Submitted 7 October, 2020; v1 submitted 4 June, 2020; originally announced June 2020.

Comments: Withdrawn due to data re-evaluation

Suppression of Gate Screening on Edge Magnetoplasmons by Highly Resistive ZnO Gate

Authors: N. Kumada, N. -H. Tu, K. -i. Sasaki, T. Ota, M. Hashisaka, S. Sasaki, K. Onomitsu, K. Muraki

Abstract: We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top g… ▽ More We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top gate, and the other does not have a gate. The measured EMP velocity in the ZnO gate sample is one order of magnitude larger than that in the Ti/Au gate sample and almost the same as that in the ungated sample. As is well known, the smaller velocity in the Ti/Au gate sample is due to the screening of the electric field in EMPs. The suppression of the gate screening effect in the ZnO gate sample allows us to measure the velocity of unscreened EMPs while changing the electron density. It also offers a way to avoid unwanted high-frequency coupling between quantum Hall edge channels and gate electrodes. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 101, 205205 (2020)

Electronic phase diagram of Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ revealed by magnetotransport measurements

Authors: Takao Watanabe, Takumi Otsuka, Shotaro Hagisawa, Yuta Koshika, Shintaro Adachi, Tomohiro Usui, Nae Sasaki, Seya Sasaki, Shunpei Yamaguchi, Yu Uezono, Yoshiki Nakanishi, Masahito Yoshizawa, Shojiro Kimura

Abstract: Among the Fe-based superconductors, Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ is unique in that its crystal structure is the simplest and the electron correlation level is the strongest, and thus it is important to investigate the do**($x$)-temperature ($T$) phase diagram of this system. However, inevitably incorporated excess Fe currently prevents the establishment of the true phase diagram. We overcome the… ▽ More Among the Fe-based superconductors, Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ is unique in that its crystal structure is the simplest and the electron correlation level is the strongest, and thus it is important to investigate the do**($x$)-temperature ($T$) phase diagram of this system. However, inevitably incorporated excess Fe currently prevents the establishment of the true phase diagram. We overcome the aforementioned significant problem via develo** a new annealing method termed as "Te-annealing" wherein single crystals are annealed under Te vapor. Specifically, we conducted various magnetotransport measurements on Te-annealed superconducting Fe$_{1+y}$Te$_{1-x}$Se$_{x}$. We observed that crossover from the incoherent to the coherent electronic state and opening of the pseudogap occurs at high temperatures ($\approx$ 150 K for $x$ = 0.2). This is accompanied by a more substantial pseudogap and the emergence of a phase with a multi-band nature at lower temperatures (below $\approx$ 50 K for $x$ = 0.2) before superconductivity sets in. Based on the results, the third type electronic phase diagram in Fe-based high-$T_c$ superconductors is revealed. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Comments: 10 pages, 5 figures, Proceedings of the International conference for ECSN-2019, Odessa, Ukraine

Journal ref: Modern Physics Letters B Vol. 34, Nos. 19 & 20 (2020) 2040051

Spintronic superconductor in a bulk layered material with natural spin-valve structure

Authors: Shunsuke Sakuragi, S. Sasaki, R. Akashi, R. Sakagami, K. Kuroda, C. Bareille, T. Hashimoto, T. Nagashima, Y. Kinoshita, Y. Hirata, M. Shimozawa, S. Asai, T. Yajima, S. Doi, N. Tsujimoto, S. Kunisada, R. Noguchi, K. Kurokawa, N. Azuma, K. Hirata, Y. Yamasaki, H. Nakao, T. K. Kim, C. Cacho, T. Masuda , et al. (7 additional authors not shown)

Abstract: Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties… ▽ More Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties in the materials with antiferromagnetic (AFM) layers, so-called natural spin-valve structure, has been reported for the Dirac Fermion and topological/axion materials. However, a bulk crystal in which magnetic and superconducting layers are alternately stacked has not been realized until now, and the search for functional properties in it is an interesting yet unexplored field in material science. Here, we discover superconductivity providing such an ideal platform in EuSn2As2 with the van der Waals stacking of magnetic Eu layers and superconducting Sn-As layers, and present the first demonstration of a natural spin-valve effect on the superconducting current. Below the superconducting transition temperature (Tc), the electrical resistivity becomes zero in the in-plane direction. In contrast, it, surprisingly, remains finite down to the lowest temperature in the out-of-plane direction, mostly due to the structure of intrinsic magnetic Josephson junctions in EuSn2As2. The magnetic order of the Eu layers (or natural spin-valve) is observed to be extremely soft, allowing one to easy control of the out-of-plane to in-plane resistivities ratio from 1 to infinity by weak external magnetic fields. The concept of multi-functional materials with stacked magnetic-superconducting layers will open a new pathway to develop novel spintronic devices with magnetically controllable superconductivity. △ Less

Submitted 22 January, 2020; originally announced January 2020.

Comments: 17 pages, 4 figures

Active spatial control of terahertz graphene plasmons by tailoring carrier density profile

Authors: Ngoc Han Tu, Katsumasa Yoshioka, Satoshi Sasaki, Makoto Takamura, Koji Muraki, Norio Kumada

Abstract: Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic b… ▽ More Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic boundaries induced by a zinc-oxide-based dual gate, which is designed to minimize the dielectric modulation. Using Fourier-transform infrared spectroscopy, we show that the plasmon reflection can be varied continuously with the carrier density difference between the adjacent regions. By utilizing this functionality, we show the ability to control size, position, and frequency of plasmon cavities. Our approach can be applied to various types of plasmonic devices, paving the way for implementing a programmable plasmonic circuit. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Comments: to be published in Communications Materials

Beryllium Polyhydride Be4H8(H2)2 Synthesized at HP/HT

Authors: Takahiro Matsuoka, Hiroshi Fujihisa, Takahiro Ishikawa, Takaya Nakagawa, Keiji Kuno, Naohisa Hirao, Yasuo Ohishi, Katsuya Shimizu, Shigeo Sasaki

Abstract: We report the XRD and Raman scattering measurements in combination with DFT calculations that reveal the formation of beryllium polyhydride Be4H8(H2)2 by laser heating Be/H2 mixture to above 1700 K at pressures between 5 GPa and 8 GPa. The Be4H8(H2)2 crystallizes in a P6_3/mmc structure and consists of corner-sharing BeH4 tetrahedrons and H2 molecules that are in an interstitial site. The Be4H8(H2… ▽ More We report the XRD and Raman scattering measurements in combination with DFT calculations that reveal the formation of beryllium polyhydride Be4H8(H2)2 by laser heating Be/H2 mixture to above 1700 K at pressures between 5 GPa and 8 GPa. The Be4H8(H2)2 crystallizes in a P6_3/mmc structure and consists of corner-sharing BeH4 tetrahedrons and H2 molecules that are in an interstitial site. The Be4H8(H2)2 is stable at least to 14 GPa on compression and stable down to 4 GPa at room temperature. Our ab-initio calculations suggest that the Be4H8(H2)2 is a meta-stable phase of Be-H system. △ Less

Submitted 10 July, 2020; v1 submitted 4 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Materials 4, 125402 (2020)

Hydrogen-Storing Salt NaCl(H$_2$) Synthesized at High Pressure and High Temperature

Authors: Takahiro Matsuoka, Shu Muraoka, Takahiro Ishikawa, Ken Niwa, Kenji Ohta, Naohisa Hirao, Saori Kawaguchi, Yasuo Ohishi, Katsuya Shimizu, Shigeo Sasaki

Abstract: X-ray diffraction and Raman scattering measurements, and first-principles calculations are performed to search for the formation of NaCl-hydrogen compound. When NaCl and H$_{2}$ mixture is laser-heated to above 1500 K at pressures exceeding 40 GPa, we observed the formation of NaClH$_{\textit{x}}$ with $\textit{P}$6$_{3}$/$\textit{mmc}$ structure which accommodates H$_{2}$ molecules in the interst… ▽ More X-ray diffraction and Raman scattering measurements, and first-principles calculations are performed to search for the formation of NaCl-hydrogen compound. When NaCl and H$_{2}$ mixture is laser-heated to above 1500 K at pressures exceeding 40 GPa, we observed the formation of NaClH$_{\textit{x}}$ with $\textit{P}$6$_{3}$/$\textit{mmc}$ structure which accommodates H$_{2}$ molecules in the interstitial sites of NaCl lattice forming ABAC stacking. Upon the decrease of pressure at 300 K, NaClH$_\textit{x}$ remains stable down to 17 GPa. Our calculations suggest the observed NaClH$_{\textit{x}}$ is NaCl(H$_{2}$). Besides, a hydrogen-richer phase NaCl(H$_{2}$)$_{4}$ is predicted to become stable at pressures above 40 GPa. △ Less

Submitted 29 August, 2019; v1 submitted 16 July, 2019; originally announced July 2019.

1/f^2 spectra of decoherence noise on ^75^As nuclear spins in bulk GaAs

Authors: Susumu Sasaki, Takanori Miura, Kohsuke Ikeda, Masahiro Sakai, Takuya Sekikawa, Masaki Saito, Tatsuro Yuge, Yoshiro Hirayama

Abstract: To identify the decoherence origin, frequency spectra using multiple π-pulses have been extensively studied. However, little has been discussed on how to define the spectral intensities from multiple-echo decays and how to incorporate the Hahn-echo T_2 in the noise spectra. Here, we show that experiments based on two theories solve these issues. With the previous theory clarifying that the spectra… ▽ More To identify the decoherence origin, frequency spectra using multiple π-pulses have been extensively studied. However, little has been discussed on how to define the spectral intensities from multiple-echo decays and how to incorporate the Hahn-echo T_2 in the noise spectra. Here, we show that experiments based on two theories solve these issues. With the previous theory clarifying that the spectral intensity should be given as the decay in the long-time limit, the intensity can be deduced without experimental artifacts usually entailed in the initial process. The other is the fluctuation-dissipation theory, with which the Hahn-echo T_2 is utilized as the zero-frequency limit of the noise spectrum and as an answer to the divergent issue on the 1/f^n noises. As a result, arsenic nuclear spins are found to exhibit 1/f2 dependences over two orders of magnitude in all the substrates of un-doped, Cr-doped semi-insulating and Si-doped metallic GaAs at 297 K. The 1/f^2 dependence indicates single noise source that is characterized by the characteristic frequency f_c_^un^=170 Hz, f_c_^Cr^=210 Hz and f_c_^Si^ =460 Hz. These f_c values are explained by a model that the decoherence is caused by the fluctuations of next-nearest-neighboring nuclear spins. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Comments: 13 pages, 5 figures

Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES

Authors: Kosuke Nakayama, Seigo Souma, Chi Xuan Trang, Daichi Takane, Chaoyu Chen, Jose Avila, Takashi Takahashi, Satoshi Sasaki, Kouji Segawa, Maria Carmen Asensio, Yoichi Ando, Takafumi Sato

Abstract: We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows u… ▽ More We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nano-islands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nano-islands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures. △ Less

Submitted 7 May, 2019; originally announced May 2019.

Comments: 6 pages, 3 figures

Journal ref: Nano Letters (2019)

Incoherent-coherent crossover and the pseudogap in Te-annealed superconducting Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ revealed by magnetotransport measurements

Authors: Takumi Otsuka, Shotaro Hagisawa, Yuta Koshika, Shintaro Adachi, Tomohiro Usui, Nae Sasaki, Seya Sasaki, Shunpei Yamaguchi, Yoshiki Nakanishi, Masahito Yoshizawa, Shojiro Kimura, Takao Watanabe

Abstract: In this study, we conducted various magnetotransport measurements on Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ single crystals from which excess iron was sufficiently removed. Our results revealed that crossover from the incoherent to the coherent electronic state and opening of the pseudogap occur at high temperatures ($\approx$ 150 K for $x$ = 0.2). This is accompanied by a more substantial pseudogap and the… ▽ More In this study, we conducted various magnetotransport measurements on Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ single crystals from which excess iron was sufficiently removed. Our results revealed that crossover from the incoherent to the coherent electronic state and opening of the pseudogap occur at high temperatures ($\approx$ 150 K for $x$ = 0.2). This is accompanied by a more substantial pseudogap and the emergence of a phase with a multi-band nature at lower temperatures (below $\approx$ 50 K for $x$ = 0.2) before superconductivity sets in. A comparison of these results with those of the as-grown (non-superconducting) samples implies that the coherent state accompanied by the pseudogap is needed for the occurrence of superconductivity in this system. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Comments: 9 pages, 7 figures

Journal ref: Physical Review B, 99, (2019) 184505-1-9

Interband resonant high-harmonic generation by valley polarized electron-hole pairs

Authors: Naotaka Yoshikawa, Kohei Nagai, Kento Uchida, Yuhei Takaguchi, Shogo Sasaki, Yasumitsu Miyata, Koichiro Tanaka

Abstract: We demonstrated nonperturbative high harmonics induced by intense mid-infrared light up to 18th order that well exceed the material bandgap in monolayer transition metal dichalcogenides. The intensities of the even-order high-harmonic radiation did not monotonically decrease as the harmonic order increased. By comparing the high harmonic spectra with the optical absorption spectra, we found that t… ▽ More We demonstrated nonperturbative high harmonics induced by intense mid-infrared light up to 18th order that well exceed the material bandgap in monolayer transition metal dichalcogenides. The intensities of the even-order high-harmonic radiation did not monotonically decrease as the harmonic order increased. By comparing the high harmonic spectra with the optical absorption spectra, we found that the enhancement in the even-order high harmonics could be attributed to the resonance to the band nesting energy. The symmetry analysis shows that the valley polarization and anisotropic band structure lead to polarization of the high-harmonic radiation under excitation with the polarization along the zigzag direction. We also examined the possible recombination pathways of electrons and holes by calculating their dynamics in real and momentum spaces based on three-step model in solids. It revealed that, by considering the electrons and holes generated at neighboring lattice sites, the electron-hole polarization driven to the band nesting region should contribute to the high harmonic radiation. Our findings open the way for attosecond science with monolayer materials having widely tunable electronic structures. △ Less

Submitted 31 May, 2019; v1 submitted 9 February, 2019; originally announced February 2019.

Journal ref: Nature Communications 10, 3709 (2019)

Unexplored reactivity of (Sn)2- Oligomers with transition metals in low-temperature solid-state reactions

Authors: Shunsuke Sasaki, Melanie Lesault, Elodie Grange, Etienne Janod, Benoît Corraze, Sylvian Cadars, Maria Teresa Caldes, Catherine Guillot-Deudon, Stéphane Jobic, Laurent Cario

Abstract: Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions… ▽ More Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions in solid state, namely towards elemental metals with a low redox potential that may be oxidized. We recently used this strategy to design, at low temperature and in an orientated manner, materials with 2D infinite layers through the topochemical insertion of copper into preformed precursors containing (S2)2- and/or (Se2)2- dimers (i.e. La2O2S2, Ba2F2S2 and LaSe2). Herein we extend the validity of the concept to the redox activity of (S2)2- and (S3)2- oligomers towards 3d transition metal elements (Cu, Ni, Fe) and highlight the strong relationship between the structures of the precursors, BaS2 and BaS3, and the products, BaCu2S2, BaCu4S3, BaNiS2 and BaFe2S3. Clearly, beyond the natural interest for the chemical reactivity of oligomers to generate compounds, this soft chemistry route may conduct to the rational conception of materials with a predicted crystal structure. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Superconductivity of platinum hydride

Authors: Takahiro Matsuoka, Masahiro Hishida, Keiji Kuno, Naohisa Hirao, Yasuo Ohishi, Shigeo Sasaki, Kazushi Takahama, Katsuya Shimizu

Abstract: We report the ac magnetic susceptibility, electrical resistance, and X-ray diffraction measurements of platinum hydride (PtHx) in diamond anvil cells, which reveal its superconducting transition. At 32 GPa, when PtHx is in a P63/mmc structure, PtHx exhibits superconducting transition at 6.7 K and superconducting transition temperature (Tc) decreases with pressure to 4.8 K at 36 GPa. The observed T… ▽ More We report the ac magnetic susceptibility, electrical resistance, and X-ray diffraction measurements of platinum hydride (PtHx) in diamond anvil cells, which reveal its superconducting transition. At 32 GPa, when PtHx is in a P63/mmc structure, PtHx exhibits superconducting transition at 6.7 K and superconducting transition temperature (Tc) decreases with pressure to 4.8 K at 36 GPa. The observed T c is higher than that of powdered Pt by more than three orders of magnitude. It is suggested that hydrides of noble metals have higher Tc than the elements. △ Less

Submitted 18 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 144511 (2019)

Neural-network Kohn-Sham exchange-correlation potential and its out-of-training transferability

Authors: Ryo Nagai, Ryosuke Akashi, Shu Sasaki, Shinji Tsuneyuki

Abstract: We incorporate in the Kohn-Sham self consistent equation a trained neural-network projection from the charge density distribution to the Hartree-exchange-correlation potential $n \rightarrow V_{\rm Hxc}$ for possible numerical approach to the exact Kohn-Sham scheme. The potential trained through a newly developed scheme enables us to evaluate the total energy without explicitly treating the formul… ▽ More We incorporate in the Kohn-Sham self consistent equation a trained neural-network projection from the charge density distribution to the Hartree-exchange-correlation potential $n \rightarrow V_{\rm Hxc}$ for possible numerical approach to the exact Kohn-Sham scheme. The potential trained through a newly developed scheme enables us to evaluate the total energy without explicitly treating the formula of the exchange-correlation energy. With a case study of a simple model we show that the well-trained neural-network $V_{\rm Hxc}$ achieves accuracy for the charge density and total energy out of the model parameter range used for the training, indicating that the property of the elusive ideal functional form of $V_{\rm Hxc}$ can approximately be encapsulated by the machine-learning construction. We also exemplify a factor that crucially limits the transferability--the boundary in the model parameter space where the number of the one-particle bound states changes--and see that this is cured by setting the training parameter range across that boundary. The training scheme and insights from the model study apply to more general systems, opening a novel path to numerically efficient Kohn-Sham potential. △ Less

Submitted 8 February, 2018; originally announced February 2018.

Comments: 7 pages, 6 figures

Dzyaloshinskii Moriya interaction across antiferromagnet / ferromagnet interface

Authors: Xin Ma, Guoqiang Yu, Seyed A. Razavi, Stephen S. Sasaki, Xiang Li, Kai Hao, Sarah H. Tolbert, Kang L. Wang, Xiaoqin Li

Abstract: The antiferromagnet (AFM) / ferromagnet (FM) interfaces are of central importance in recently developed pure electric or ultrafast control of FM spins, where the underlying mechanisms remain unresolved. Here we report the direct observation of Dzyaloshinskii Moriya interaction (DMI) across the AFM/FM interface of IrMn/CoFeB thin films. The interfacial DMI is quantitatively measured from the asymme… ▽ More The antiferromagnet (AFM) / ferromagnet (FM) interfaces are of central importance in recently developed pure electric or ultrafast control of FM spins, where the underlying mechanisms remain unresolved. Here we report the direct observation of Dzyaloshinskii Moriya interaction (DMI) across the AFM/FM interface of IrMn/CoFeB thin films. The interfacial DMI is quantitatively measured from the asymmetric spin wave dispersion in the FM layer using Brillouin light scattering. The DMI strength is enhanced by a factor of 7 with increasing IrMn layer thickness in the range of 1- 7.5 nm. Our findings provide deeper insight into the coupling at AFM/FM interface and may stimulate new device concepts utilizing chiral spin textures such as magnetic skyrmions in AFM/FM heterostructures. △ Less

Submitted 1 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Lett. 119, 027202 (2017)

Planar Hall effect from the surface of topological insulators

Authors: A. A. Taskin, Henry F. Legg, Fan Yang, Satoshi Sasaki, Yasushi Kanai, Kazuhiko Matsumoto, Achim Rosch, Yoichi Ando

Abstract: A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nond… ▽ More A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments. △ Less

Submitted 9 March, 2017; originally announced March 2017.

Comments: 7 pages main text, 12 pages supplemental material

Journal ref: Nat Commun 8, 1340 (2017)

Crystallization and vitrification of electrons in a glass-forming charge liquid

Authors: S. Sasaki, K. Hashimoto, R. Kobayashi, K. Itoh, S. Iguchi, Y. Nishio, Y. Ikemoto, T. Moriwaki, N. Yoneyama, M. Watanabe, A. Ueda, H. Mori, K. Kobayashi, R. Kumai, Y. Murakami, J. Muller, T. Sasaki

Abstract: Charge ordering (CO) is a phenomenon in which electrons in solids crystallize into a periodic pattern of charge-rich and charge-poor sites owing to strong electron correlations. This usually results in long-range order. In geometrically frustrated systems, however, a glassy electronic state without long-range CO has been observed. We found that a charge-ordered organic material with an isosceles t… ▽ More Charge ordering (CO) is a phenomenon in which electrons in solids crystallize into a periodic pattern of charge-rich and charge-poor sites owing to strong electron correlations. This usually results in long-range order. In geometrically frustrated systems, however, a glassy electronic state without long-range CO has been observed. We found that a charge-ordered organic material with an isosceles triangular lattice shows charge dynamics associated with crystallization and vitrification of electrons, which can be understood in the context of an energy landscape arising from the degeneracy of various CO patterns. The dynamics suggest that the same nucleation and growth processes that characterize conventional glass-forming liquids guide the crystallization of electrons. These similarities may provide insight into our understanding of the liquid-glass transition. △ Less

Submitted 5 October, 2017; v1 submitted 6 December, 2016; originally announced December 2016.

Journal ref: Science 357, 1381-1385 (2017)

Theory of the Integer and Fractional Quantum Hall Effects

Authors: Shosuke Sasaki

Abstract: The present theory has investigated the FQHE without any quasi-particle. The electric field due to the Hall voltage is taken into consideration. We find the ground state where the electron configuration is uniquely determined so as to have the minimum classical Coulomb energy. Residual Coulomb interaction HI yields quantum transitions which satisfy the momentum conservation along the current direc… ▽ More The present theory has investigated the FQHE without any quasi-particle. The electric field due to the Hall voltage is taken into consideration. We find the ground state where the electron configuration is uniquely determined so as to have the minimum classical Coulomb energy. Residual Coulomb interaction HI yields quantum transitions which satisfy the momentum conservation along the current direction. The number of Coulomb transitions from nearest electron pairs is dependent sensitively upon the fractional number of the filling factor. For example, the number u(2/3) of allowed transitions at nu=2/3 abruptly decreases when the filling factor nu deviates slightly from 2/3. The limiting value of the number is equal to half of u(2/3). The discontinuous behavior produces the valley structure in the energy spectrum. This mechanism produces the Hall plateaus at the specific filling factors nu=1/(2j+1), 2j /(2j+1), j/(2j+1), j/(2j-1) etc. and also at the non-standard filling factors nu=7/11, 4/11, 4/13, 5/13, 5/17, 6/17 etc. We have studied the pair energies of more distant electron pairs in Chapter 5. Thereby the small valley structure yields at nu=5/2, 7/2 and so on. The shapes of polarization curves depend mainly upon the numerator of the fractional filling factor in nu<1 because the spin polarization belongs to electrons only. There are many spin-arrangements with the same eigen-energy of HD. The Coulomb interaction HI yields quantum transitions among these degenerate ground states. The partial Hamiltonian has been diagonalized exactly. The eigen-states give the spin polarization versus magnetic field strength. The theoretical curves of the spin polarization are in good agreement with the experimental data as studied in Chapter 9. Thus the present theory has well explained the various phenomena of the FQHE. △ Less

Submitted 28 March, 2016; originally announced March 2016.

Ferromagnetism in Cr-doped topological insulator TlSbTe2

Authors: Zhiwei Wang, Kouji Segawa, Satoshi Sasaki, A. A. Taskin, Yoichi Ando

Abstract: We have synthesized a new ferromagnetic topological insulator by do** Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl_{1-x}Cr_{x}SbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θ_c was found to increase with the Cr content but remained rela… ▽ More We have synthesized a new ferromagnetic topological insulator by do** Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl_{1-x}Cr_{x}SbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θ_c was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μ_B (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass (SdH) oscillations were observed in samples with the Cr-do** level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by do** Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%. △ Less

Submitted 21 May, 2015; originally announced May 2015.

Comments: 13 pages, 7 figures; accepted for publication in APL Materials

Journal ref: APL Materials 3, 083302 (2015)

Observation of Two-Dimensional Bulk Electronic States in a Superconducting Topological Insulator Heterostructure Cux(PbSe)5(Bi2Se3)6: Implications for Unconventional Superconductivity

Authors: K. Nakayama, H. Kimizuka, Y. Tanaka, T. Sato, S. Souma, T. Takahashi, Satoshi Sasaki, Kouji Segawa, Yoichi Ando

Abstract: We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the occurrence of possible unconventional superconductivity. Upon Cu intercalation into the parent compound (PbSe)5(Bi2Se3)6, we observed a distinct energy shift of the bul… ▽ More We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the occurrence of possible unconventional superconductivity. Upon Cu intercalation into the parent compound (PbSe)5(Bi2Se3)6, we observed a distinct energy shift of the bulk conduction band due to electron do**. Photon-energy dependent ARPES measurements of CPSBS revealed that the observed bulk band forms a cylindrical electronlike Fermi surface at the Brillouin-zone center. The two-dimensional nature of the bulk electronic states suggests the occurrence of odd-parity Eu pairing or even-parity d-wave pairing, both of which may provide a platform of Majorana bound states in the superconducting state. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Comments: 5 pages, 3 figures

Superconducting doped topological materials

Authors: Satoshi Sasaki, Takeshi Mizushima

Abstract: Recently, the search for Majorana fermions (MFs) has become one of the most important and exciting issues in condensed matter physics since such an exotic quasiparticle is expected to potentially give rise to unprecedented quantum phenomena whose functional properties will be used to develop future quantum technology. Theoretically, the MFs may reside in various types of topological superconductor… ▽ More Recently, the search for Majorana fermions (MFs) has become one of the most important and exciting issues in condensed matter physics since such an exotic quasiparticle is expected to potentially give rise to unprecedented quantum phenomena whose functional properties will be used to develop future quantum technology. Theoretically, the MFs may reside in various types of topological superconductor materials that is characterized by the topologically protected gapless surface state which are essentially an Andreev bound state. Superconducting doped topological insulators and topological crystalline insulators are promising candidates to harbor the MFs. In this review, we discuss recent progress and understanding on the research of MFs based on time-reversal-invariant superconducting topological materials to deepen our understanding and have a better outlook on both the search for and realization of MFs in these systems. We also discuss some advantages of these bulk systems to realize MFs including remarkable superconducting robustness against nonmagnetic impurities. △ Less

Submitted 21 May, 2015; v1 submitted 12 February, 2015; originally announced February 2015.

Comments: 13 pages, 7 figure: Accepted for publication in Physica C, Special Issue on Superconducting Materials

Journal ref: Physica C 514, 206 (2015)

Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3

Authors: Yuichiro Ando, Takahiro Hamasaki, Takayuki Kurokawa, Kouki Ichiba, Fan Yang, Mario Novak, Satoshi Sasaki, Kouji Segawa, Yoichi Ando, Masashi Shiraishi

Abstract: We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was injected/extracted through a ferromagnetic electrode made of Ni80Fe20, and an unusual current-direction-dependent magnetoresist… ▽ More We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was injected/extracted through a ferromagnetic electrode made of Ni80Fe20, and an unusual current-direction-dependent magnetoresistance gives evidence for the appearance of spin polarization which leads to a spin-dependent resistance at the BSTS/Ni80Fe20 interface. In contrast, our control experiment on Bi2Se3 gave null result. These observations demonstrate the importance of the Fermi-level control for the electrical detection of the spin polarization in topological insulators. △ Less

Submitted 9 December, 2014; originally announced December 2014.

Comments: 13pages, 4 figures

Journal ref: Nano Letters 14, 6226 (2014)

Superconducting Sn_{1-x}In_{x}Te Nanoplates

Authors: Satoshi Sasaki, Yoichi Ando

Abstract: Recently, the search for Majorana fermions has become one of the most prominent subjects in condensed matter physics. This search involves explorations of new materials and hence offers interesting opportunities for chemistry. Theoretically, Majorana fermions may reside in various types of topological superconductor materials, and superconducting Sn_{1-x}In_{x}Te, which is a doped topological crys… ▽ More Recently, the search for Majorana fermions has become one of the most prominent subjects in condensed matter physics. This search involves explorations of new materials and hence offers interesting opportunities for chemistry. Theoretically, Majorana fermions may reside in various types of topological superconductor materials, and superconducting Sn_{1-x}In_{x}Te, which is a doped topological crystalline insulator, is one of the promising candidates to harbor Majorana fermions. Here, we report the first successful growth of superconducting Sn_{1-x}In_{x}Te nanoplates on Si substrates by a simple vapor transport method without employing any catalyst. We observed robust superconducting transitions in those nanoplates after device fabrication and found that the relation between the critical temperature and the carrier density is consistent with that of bulk single crystals, suggesting that the superconducting properties of the nanoplate devices are essentially the same as those of bulk crystals. With the help of nanofabrication, those nanoplates would prove useful for elucidating the potentially topological nature of superconductivity in Sn_{1-x}In_{x}Te to harbor Majorana fermions and thereby contribute to the future quantum technologies. △ Less

Submitted 21 May, 2015; v1 submitted 17 October, 2014; originally announced October 2014.

Comments: 16 page, 4 figures (paper proper) + 2 pages, 2 figures (supporting information); final version accepted for publication in Crystal Growth & Design

Journal ref: Cryst. Growth Des. 15, 2748 - 2752 (2015)

Do**-dependent charge dynamics in CuxBi2Se3

Authors: Luke J. Sandilands, Anjan A. Reijnders, Markus Kriener, Kouji Segawa, Satoshi Sasaki, Yoichi Ando, Kenneth S. Burch

Abstract: Superconducting CuxBi2Se3 has attracted significant attention as a candidate topological superconductor. Besides inducing superconductivity, the introduction of Cu atoms to this material has also been observed to produce a number of unusual features in DC transport and magnetic susceptibility measurements. To clarify the effect of Cu do**, we have performed a systematic optical spectroscopic stu… ▽ More Superconducting CuxBi2Se3 has attracted significant attention as a candidate topological superconductor. Besides inducing superconductivity, the introduction of Cu atoms to this material has also been observed to produce a number of unusual features in DC transport and magnetic susceptibility measurements. To clarify the effect of Cu do**, we have performed a systematic optical spectroscopic study of the electronic structure of CuxBi2Se3 as a function of Cu do**. Our measurements reveal an increase in the conduction band effective mass, while both the free carrier density and lifetime remain relatively constant for Cu content greater than x=0.15. The increased mass naturally explains trends in the superfluid density and residual resistivity as well as hints at the complex nature of Cu do** in Bi2Se3. △ Less

Submitted 18 September, 2014; originally announced September 2014.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 90, 094503 (2014)

Large linear magnetoresistance in the Dirac semimetal TlBiSSe

Authors: Mario Novak, Satoshi Sasaki, Kouji Segawa, Yoichi Ando

Abstract: The mixed-chalcogenide compound TlBiSSe realizes a three-dimensional (3D) Dirac semimetal state. In clean, low-carrier-density single crystals of this material, we found Shubnikov-de Haas oscillations to signify its 3D Dirac nature. Moreover, we observed very large linear magnetoresistance (MR) approaching 10,000% in 14 T at 1.8 K, which diminishes rapidly above 30 K. Our analysis of the magnetotr… ▽ More The mixed-chalcogenide compound TlBiSSe realizes a three-dimensional (3D) Dirac semimetal state. In clean, low-carrier-density single crystals of this material, we found Shubnikov-de Haas oscillations to signify its 3D Dirac nature. Moreover, we observed very large linear magnetoresistance (MR) approaching 10,000% in 14 T at 1.8 K, which diminishes rapidly above 30 K. Our analysis of the magnetotransport data points to the possibility that the linear MR is fundamentally governed by the Hall field; although such a situation has been predicted for highly-inhomogeneous systems, inhomogeneity does not seem to play an important role in TlBiSSe. Hence, the mechanism of large linear MR is an intriguing open question in a clean 3D Dirac system. △ Less

Submitted 10 August, 2014; originally announced August 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 91, 041203(R) (2015)

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Authors: Fan Yang, A. A. Taskin, Satoshi Sasaki, Kouji Segawa, Yasuhide Ohno, Kazuhiko Matsumoto, Yoichi Ando

Abstract: The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 cap** layer and a SiN_x diel… ▽ More The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 cap** layer and a SiN_x dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples. △ Less

Submitted 21 April, 2014; originally announced April 2014.

Comments: 5 pages, 3 figures; accepted for publication in Appl. Phys. Lett

A new superconductor derived from topological insulator heterostructure

Authors: Satoshi Sasaki, Kouji Segawa, Yoichi Ando

Abstract: Topological superconductors (TSCs) are of significant current interest because they offer promising platforms for finding Majorana fermions. Here we report a new superconductor synthesized by intercalating Cu into a naturally-formed topological insulator (TI) heterostructure consisting of Bi2Se3 TI units separated by nontopological PbSe units. For the first time in a TI-based superconductor, the s… ▽ More Topological superconductors (TSCs) are of significant current interest because they offer promising platforms for finding Majorana fermions. Here we report a new superconductor synthesized by intercalating Cu into a naturally-formed topological insulator (TI) heterostructure consisting of Bi2Se3 TI units separated by nontopological PbSe units. For the first time in a TI-based superconductor, the specific-heat behavior of this material suggests the occurrence of unconventional superconductivity with gap nodes. The existence of gap nodes in a strongly spin-orbit coupled superconductor would give rise to spin-split Andreev bound states that are the hallmark of topological superconductivity. Hence, this new superconductor emerges as an intriguing candidate TSC. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 5 pages, 4 figures (paper proper) + 5 pages, 7 figures (supplemental material)

Cooperative Lifting of Spin Blockade in a Three-Terminal Triple Quantum Dot

Authors: Takashi Kobayashi, Takeshi Ota, Satoshi Sasaki, Koji Muraki

Abstract: We report measurements of multi-path transport through a triple quantum dot (TQD) in the few-electron regime using a GaAs three-terminal device with a separate lead attached to each dot. When two paths reside inside the transport window and are simultaneously spin-blockaded, the leak currents through both paths are significantly enhanced. We suggest that the transport processes in the two paths co… ▽ More We report measurements of multi-path transport through a triple quantum dot (TQD) in the few-electron regime using a GaAs three-terminal device with a separate lead attached to each dot. When two paths reside inside the transport window and are simultaneously spin-blockaded, the leak currents through both paths are significantly enhanced. We suggest that the transport processes in the two paths cooperate to lift the spin blockade. Fine structures in transport spectra indicate that different kinds of cooperative mechanisms are involved, depending on the details of the three-electron spin states governed by the size of exchange splitting relative to nuclear spin fluctuations. Our results indicate that a variety of correlation phenomena can be explored in three-terminal TQDs. △ Less

Submitted 26 November, 2013; originally announced November 2013.

Comments: 5 pages, 5 figures; contains Supplementary Information

Unusual nature of fully-gapped superconductivity in In-doped SnTe

Authors: Mario Novak, Satoshi Sasaki, Markus Kriener, Kouji Segawa, Yoichi Ando

Abstract: The superconductor Sn_{1-x}In_{x}Te is a doped topological crystalline insulator and has become important as a candidate topological superconductor, but its superconducting phase diagram is poorly understood. By measuring about 50 samples of high-quality, vapor-grown single crystals, we found that the dependence of the superconducting transition temperature Tc on the In content x presents a qualit… ▽ More The superconductor Sn_{1-x}In_{x}Te is a doped topological crystalline insulator and has become important as a candidate topological superconductor, but its superconducting phase diagram is poorly understood. By measuring about 50 samples of high-quality, vapor-grown single crystals, we found that the dependence of the superconducting transition temperature Tc on the In content x presents a qualitative change across the critical do** xc ~ 3.8%, at which a structural phase transition takes place. Intriguingly, in the ferroelectric rhombohedral phase below the critical do**, Tc is found to be strongly ENHANCED with impurity scattering. It appears that the nature of electron pairing changes across xc in Sn_{1-x}In_{x}Te. △ Less

Submitted 7 October, 2013; v1 submitted 5 September, 2013; originally announced September 2013.

Comments: 5 pages, 4 figures; final version published in PRB, Rapid Communications

Journal ref: Phys. Rev. B 88, 140502(R) (2013)

Transmission-phase measurement of the 0.7 anomaly in a quantum point contact

Authors: Toshiyuki Kobayashi, Shoei Tsuruta, Satoshi Sasaki, Hiroyuki Tamura, Tatsushi Akazaki

Abstract: We measure the transmission phase of a quantum point contact (QPC) at a low carrier density in which electron interaction is expected to play an important role and anomalous behaviors are observed. In the first conductance plateau, the transmission phase shifts monotonically as the carrier density is decreased by the gate voltage. When the conductance starts to decrease, in what is often called th… ▽ More We measure the transmission phase of a quantum point contact (QPC) at a low carrier density in which electron interaction is expected to play an important role and anomalous behaviors are observed. In the first conductance plateau, the transmission phase shifts monotonically as the carrier density is decreased by the gate voltage. When the conductance starts to decrease, in what is often called the 0.7 regime, the phase exhibits an anomalous increase compared with the noninteracting model. The observation implies an increase in the wave vector as the carrier density is decreased, suggesting a transition to a spin-incoherent Luttinger liquid. △ Less

Submitted 27 June, 2013; originally announced June 2013.

Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3

Authors: A. A. Taskin, Fan Yang, Satoshi Sasaki, Kouji Segawa, Yoichi Ando

Abstract: The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topol… ▽ More The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin. △ Less

Submitted 14 March, 2014; v1 submitted 11 May, 2013; originally announced May 2013.

Comments: 6 pages, 4 figures (main text) + 7 pages, 7 figures (supplemental material); final version, Phys.Rev.B, Rapid Communications

Journal ref: Phys. Rev. B 89, 121302(R) (2014)

Anomalous metallic state above the upper critical field of the conventional three-dimensional superconductor AgSnSe2 with strong intrinsic disorder

Authors: Zhi Ren, M. Kriener, A. A. Taskin, Satoshi Sasaki, Kouji Segawa, Yoichi Ando

Abstract: We report superconducting properties of AgSnSe2 which is a conventional type-II superconductor in the very dirty limit due to intrinsically strong electron scatterings. While this material is an isotropic three-dimensional (3D) superconductor with a not-so-short coherence length where strong vortex fluctuations are NOT expected, we found that the magnetic-field-induced resistive transition at fixe… ▽ More We report superconducting properties of AgSnSe2 which is a conventional type-II superconductor in the very dirty limit due to intrinsically strong electron scatterings. While this material is an isotropic three-dimensional (3D) superconductor with a not-so-short coherence length where strong vortex fluctuations are NOT expected, we found that the magnetic-field-induced resistive transition at fixed temperatures becomes increasingly broader toward zero temperature and, surprisingly, that this broadened transition is taking place largely ABOVE the upper critical field determined thermodynamically from the specific heat. This result points to the existence of an anomalous metallic state possibly caused by quantum phase fluctuations in a strongly-disordered 3D superconductor. △ Less

Submitted 19 February, 2013; originally announced February 2013.

Comments: 6 pages, 6 figures; accepted for publication in PRB

Journal ref: Phys. Rev. B 87, 064512 (2013)

Anomalous dressing of Dirac fermions in the topological surface state of Bi2Se3, Bi2Te3, and CuxBi2Se3

Authors: Takeshi Kondo, Y. Nakashima, Y. Ota, Y. Ishida, W. Malaeb, K. Okazaki, S. Shin, M. Kriener, Satoshi Sasaki, Kouji Segawa, Yoichi Ando

Abstract: Quasiparticle dynamics on the topological surface state of Bi2Se3, Bi2Te3, and superconducting CuxBi2Se3 are studied by 7 eV laser-based angle resolved photoemission spectroscopy. We find strong mode-couplings in the Dirac-cone surface states at energies of ~3 and ~15-20 meV, which leads to an exceptionally large coupling constant of ~3, which is one of the strongest ever reported for any material… ▽ More Quasiparticle dynamics on the topological surface state of Bi2Se3, Bi2Te3, and superconducting CuxBi2Se3 are studied by 7 eV laser-based angle resolved photoemission spectroscopy. We find strong mode-couplings in the Dirac-cone surface states at energies of ~3 and ~15-20 meV, which leads to an exceptionally large coupling constant of ~3, which is one of the strongest ever reported for any material. This result is compatible with the recent observation of a strong Kohn anomaly in the surface phonon dispersion of Bi2Se3, but it appears that the theoretically proposed "spin-plasmon" excitations realized in helical metals are also playing an important role. Intriguingly, the ~3 meV mode coupling is found to be enhanced in the superconducting state of CuxBi2Se3. △ Less

Submitted 5 January, 2013; originally announced January 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 110, 217601 (2013)

Fermiology of Strongly Spin-Orbit Coupled Superconductor Sn1-xInxTe and its Implication to Topological Superconductivity

Authors: T. Sato, Y. Tanaka, K. Nakayama, S. Souma, T. Takahashi, S. Sasaki, Z. Ren, A. A. Taskin, Kouji Segawa, Yoichi Ando

Abstract: We have performed angle-resolved photoemission spectroscopy of the strongly spin-orbit coupled low-carrier density superconductor Sn1-xInxTe (x = 0.045) to elucidate the electronic states relevant to the possible occurrence of topological superconductivity recently reported for this compound from point-contact spectroscopy. The obtained energy-band structure reveals a small holelike Fermi surface… ▽ More We have performed angle-resolved photoemission spectroscopy of the strongly spin-orbit coupled low-carrier density superconductor Sn1-xInxTe (x = 0.045) to elucidate the electronic states relevant to the possible occurrence of topological superconductivity recently reported for this compound from point-contact spectroscopy. The obtained energy-band structure reveals a small holelike Fermi surface centered at the L point of the bulk Brillouin zone, together with a signature of a topological surface state which indicates that this superconductor is essentially a doped topological crystalline insulator characterized by band inversion and mirror symmetry. A comparison of the electronic states with a band-non-inverted superconductor possessing a similar Fermi surface structure, Pb1-xTlxTe, suggests that the anomalous behavior in the superconducting state of Sn1-xInxTe is likely to be related to the peculiar orbital characteristics of the bulk valence band and/or the presence of a topological surface state. △ Less

Submitted 24 December, 2012; originally announced December 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 110, 206804 (2013)

Impact of graphene quantum capacitance on transport spectroscopy

Authors: K. Takase, S. Tanabe, S. Sasaki, H. Hibino, K. Muraki

Abstract: We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic… ▽ More We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{\mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{\mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ map** vs. $V_{\mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ν=2$ quantum Hall state. △ Less

Submitted 29 October, 2012; originally announced October 2012.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 86, 165435 (2012)

Shot noise spectroscopy on a semiconductor quantum dot in the elastic and inelastic cotunneling regimes

Authors: Yuma Okazaki, Satoshi Sasaki, Koji Muraki

Abstract: We report shot noise spectroscopy on a semiconductor quantum dot in a cotunneling regime. The DC conductance measurements show clear signatures of both elastic and inelastic cotunneling transport inside a Coulomb diamond. We observed Poissonian shot noise with the Fano factor $F\approx 1$ in the elastic cotunneling regime, and super-Poissonian Fano factor $1<F<3$ in the inelastic cotunneling regim… ▽ More We report shot noise spectroscopy on a semiconductor quantum dot in a cotunneling regime. The DC conductance measurements show clear signatures of both elastic and inelastic cotunneling transport inside a Coulomb diamond. We observed Poissonian shot noise with the Fano factor $F\approx 1$ in the elastic cotunneling regime, and super-Poissonian Fano factor $1<F<3$ in the inelastic cotunneling regime. The differences in the value of the Fano factor between elastic and inelastic processes reveal the microscopic mechanisms involved in the cotunneling transport. △ Less

Submitted 9 January, 2013; v1 submitted 7 August, 2012; originally announced August 2012.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 87, 041302(R) (2013)

Relaxor ferroelectricity induced by electron correlations in a molecular dimer Mott insulator

Authors: S. Iguchi, S. Sasaki, N. Yoneyama, H. Taniguchi, T. Nishizaki, T. Sasaki

Abstract: We have investigated the dielectric response in an antiferromagnetic dimer-Mott insulator beta'-(BEDT-TTF)2ICl2 with square lattice, compared to a spin liquid candidate kappa-(BEDT-TTF)2Cu2(CN)3. Temperature dependence of the dielectric constant shows a peak structure obeying Curie-Weiss law with strong frequency dependence. We found an anisotropic ferroelectricity by pyrocurrent measurements, whi… ▽ More We have investigated the dielectric response in an antiferromagnetic dimer-Mott insulator beta'-(BEDT-TTF)2ICl2 with square lattice, compared to a spin liquid candidate kappa-(BEDT-TTF)2Cu2(CN)3. Temperature dependence of the dielectric constant shows a peak structure obeying Curie-Weiss law with strong frequency dependence. We found an anisotropic ferroelectricity by pyrocurrent measurements, which suggests the charge disproportionation in a dimer. The ferroelectric actual charge freezing temperature is related to the antiferromagnetic interaction, which is expected to the charge-spin coupled degrees of freedom in the system. △ Less

Submitted 28 January, 2013; v1 submitted 2 August, 2012; originally announced August 2012.

Comments: 5 pages, 4 figures, to be published in Phys. Rev. B

Odd-Parity Pairing and Topological Superconductivity in a Strongly Spin-Orbit Coupled Semiconductor

Authors: Satoshi Sasaki, Zhi Ren, A. A. Taskin, Kouji Segawa, Liang Fu, Yoichi Ando

Abstract: The existence of topological superconductors preserving time-reversal symmetry was recently predicted, and they are expected to provide a solid-state realization of itinerant massless Majorana fermions and a route to topological quantum computation. Their first concrete example, CuxBi2Se3, was discovered last year, but the search for new materials has so far been hindered by the lack of guiding pr… ▽ More The existence of topological superconductors preserving time-reversal symmetry was recently predicted, and they are expected to provide a solid-state realization of itinerant massless Majorana fermions and a route to topological quantum computation. Their first concrete example, CuxBi2Se3, was discovered last year, but the search for new materials has so far been hindered by the lack of guiding principle. Here, we report point-contact spectroscopy experiments showing that the low-carrier-density superconductor Sn_{1-x}In_{x}Te is accompanied with surface Andreev bound states which, with the help of theoretical analysis, give evidence for odd-parity pairing and topological superconductivity. The present and previous finding of topological superconductivity in Sn_{1-x}In_{x}Te and CuxBi2Se3 demonstrates that odd-parity pairing favored by strong spin-orbit coupling is a common underlying mechanism for materializing topological superconductivity. △ Less

Submitted 16 October, 2012; v1 submitted 31 July, 2012; originally announced August 2012.

Comments: 5 pages, 3 figures (paper proper) + 2 pages, 1 figure (supplemental material); final version accepted for publication in PRL; theoretical part has been significantly expanded

Journal ref: Phys. Rev. Lett. 109, 217004 (2012)

Anomalous suppression of the superfluid density in the CuxBi2Se3 superconductor upon progressive Cu intercalation

Authors: M. Kriener, Kouji Segawa, Satoshi Sasaki, Yoichi Ando

Abstract: CuxBi2Se3 was recently found to be likely the first example of a time-reversal-invariant topological superconductor accompanied by helical Majorana fermions on the surface. Here we present that progressive Cu intercalation into this system introduces significant disorder and leads to an anomalous suppression of the superfluid density which was obtained from the measurements of the lower critical f… ▽ More CuxBi2Se3 was recently found to be likely the first example of a time-reversal-invariant topological superconductor accompanied by helical Majorana fermions on the surface. Here we present that progressive Cu intercalation into this system introduces significant disorder and leads to an anomalous suppression of the superfluid density which was obtained from the measurements of the lower critical field. At the same time, the transition temperature T_c is only moderately suppressed, which agrees with a recent prediction for the impurity effect in this class of topological superconductors bearing strong spin-orbit coupling. Those unusual disorder effects give support to the possible odd-parity pairing state in CuxBi2Se3. △ Less

Submitted 20 November, 2012; v1 submitted 27 June, 2012; originally announced June 2012.

Comments: 5 pages, 4 figures; title has been changed; final version published in Phys. Rev. B, Rapid Communications

Journal ref: Phys. Rev. B 86, 180505(R) (2012)