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Superconducting magic-angle twisted trilayer graphene hosts competing magnetic order and moiré inhomogeneities
Authors:
Ayshi Mukherjee,
Surat Layek,
Subhajit Sinha,
Ritajit Kundu,
Alisha H. Marchawala,
Mahesh Hingankar,
Joydip Sarkar,
L. D. Varma Sangani,
Heena Agarwal,
Sanat Ghosh,
Aya Batoul Tazi,
Kenji Watanabe,
Takashi Taniguchi,
Abhay N. Pasupathy,
Arijit Kundu,
Mandar M. Deshmukh
Abstract:
The microscopic mechanism of superconductivity in the magic-angle twisted graphene family, including magic-angle twisted trilayer graphene (MATTG), is poorly understood. Properties of MATTG, like Pauli limit violation, suggest unconventional superconductivity. Theoretical studies propose proximal magnetic states in the phase diagram, but direct experimental evidence is lacking. We show direct evid…
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The microscopic mechanism of superconductivity in the magic-angle twisted graphene family, including magic-angle twisted trilayer graphene (MATTG), is poorly understood. Properties of MATTG, like Pauli limit violation, suggest unconventional superconductivity. Theoretical studies propose proximal magnetic states in the phase diagram, but direct experimental evidence is lacking. We show direct evidence for an in-plane magnetic order proximal to the superconducting state using two complementary electrical transport measurements. First, we probe the superconducting phase by using statistically significant switching events from superconducting to the dissipative state of MATTG. The system behaves like a network of Josephson junctions due to lattice relaxation-induced moiré inhomogeneity in the system. We observe non-monotonic and hysteretic responses in the switching distributions as a function of temperature and in-plane magnetic field. Second, in normal regions doped slightly away from the superconducting regime, we observe hysteresis in magnetoresistance with an in-plane magnetic field; showing evidence for in-plane magnetic order that vanishes $\sim$900 mK. Additionally, we show a broadened Berezinskii-Kosterlitz-Thouless transition due to relaxation-induced moiré inhomogeneity. We find superfluid stiffness $J_{\mathrm{s}}$$\sim$0.15 K with strong temperature dependence. Theoretically, the magnetic and superconducting order arising from the magnetic order's fluctuations have been proposed - we show direct evidence for both. Our observation that the hysteretic magnetoresistance is sensitive to the in-plane field may constrain possible intervalley-coherent magnetic orders and the resulting superconductivity that arises from its fluctuations.
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Submitted 4 June, 2024;
originally announced June 2024.
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Superconducting Cavity-Based Sensing of Band Gaps in 2D Materials
Authors:
Krishnendu Maji,
Joydip Sarkar,
Supriya Mandal,
Sriram H.,
Mahesh Hingankar,
Ayshi Mukherjee,
Soumyajit Samal,
Anirban Bhattacharjee,
Meghan P. Patankar,
Kenji Watanabe,
Takashi Taniguchi,
Mandar M. Deshmukh
Abstract:
The superconducting coplanar waveguide (SCPW) cavity plays an essential role in various areas like superconducting qubits, parametric amplifiers, radiation detectors, and studying magnon-photon and photon-phonon coupling. Despite its wide-ranging applications, the use of SCPW cavities to study various van der Waals 2D materials is relatively unexplored. The resonant modes of the SCPW cavity exquis…
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The superconducting coplanar waveguide (SCPW) cavity plays an essential role in various areas like superconducting qubits, parametric amplifiers, radiation detectors, and studying magnon-photon and photon-phonon coupling. Despite its wide-ranging applications, the use of SCPW cavities to study various van der Waals 2D materials is relatively unexplored. The resonant modes of the SCPW cavity exquisitely sense the dielectric environment. In this work, we measure the charge compressibility of bilayer graphene coupled to a half-wavelength SCPW cavity. Our approach provides a means to detect subtle changes in the capacitance of the bilayer graphene heterostructure, which depends on the compressibility of bilayer graphene, manifesting as shifts in the resonant frequency of the cavity. This method holds promise for exploring a wide class of van der Waals 2D materials, including transition metal dichalcogenides (TMDs) and their moiré where DC transport measurement is challenging.
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Submitted 9 March, 2024;
originally announced March 2024.
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Coherent Light Control of a Metastable Hidden Phase
Authors:
J. Maklar,
S. Dong,
J. Sarkar,
Y. A. Gerasimenko,
T. Pincelli,
S. Beaulieu,
P. S. Kirchmann,
J. A. Sobota,
S. -L. Yang,
D. Leuenberger,
R. G. Moore,
Z. -X. Shen,
M. Wolf,
D. Mihailovic,
R. Ernstorfer,
L. Rettig
Abstract:
Metastable phases present a promising route to expand the functionality of complex materials. Of particular interest are light-induced metastable phases that are inaccessible under equilibrium conditions, as they often host new, emergent properties switchable on ultrafast timescales. However, the processes governing the trajectories to such hidden phases remain largely unexplored. Here, using time…
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Metastable phases present a promising route to expand the functionality of complex materials. Of particular interest are light-induced metastable phases that are inaccessible under equilibrium conditions, as they often host new, emergent properties switchable on ultrafast timescales. However, the processes governing the trajectories to such hidden phases remain largely unexplored. Here, using time- and angle-resolved photoemission spectroscopy, we investigate the ultrafast dynamics of the formation of a hidden quantum state in the layered dichalcogenide 1T-TaS$_2$ upon photoexcitation. Our results reveal the nonthermal character of the transition governed by a collective charge-density-wave excitation. Utilizing a double-pulse excitation of the structural mode, we show vibrational coherent control of the phase-transition efficiency. Our demonstration of exceptional control, switching speed, and stability of the hidden phase are key for device applications.
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Submitted 8 June, 2022;
originally announced June 2022.
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Quantum noise limited microwave amplification using a graphene Josephson junction
Authors:
Joydip Sarkar,
Kishor V. Salunkhe,
Supriya Mandal,
Subhamoy Ghatak,
Alisha H. Marchawala,
Ipsita Das,
Kenji Watanabe,
Takashi Taniguchi,
R. Vijay,
Mandar M. Deshmukh
Abstract:
Josephson junctions (JJ) and their tunable properties, including their nonlinearities, form the core of superconducting circuit quantum electrodynamics (cQED). In quantum circuits, low-noise amplification of feeble microwave signals is essential and the Josephson parametric amplifiers (JPA) are the widely used devices. The existing JPAs are based on Al-AlOx-Al tunnel junctions realized in a superc…
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Josephson junctions (JJ) and their tunable properties, including their nonlinearities, form the core of superconducting circuit quantum electrodynamics (cQED). In quantum circuits, low-noise amplification of feeble microwave signals is essential and the Josephson parametric amplifiers (JPA) are the widely used devices. The existing JPAs are based on Al-AlOx-Al tunnel junctions realized in a superconducting quantum interference device geometry, where magnetic flux is the knob for tuning the frequency. Recent experimental realizations of 2D van der Waals JJs provide an opportunity to implement various cQED devices with the added advantage of tuning the junction properties and the operating point using a gate potential. While other components of a possible 2D van der Waals cQED architecture have been demonstrated -- quantum noise limited amplifier, an essential component, has not been realized. Here we implement a quantum noise limited JPA, using a graphene JJ, that has linear resonance gate tunability of 3.5 GHz. We report 24 dB amplification with 10 MHz bandwidth and -130 dBm saturation power; performance on par with the best single-junction JPAs. Importantly, our gate tunable JPA works in the quantum-limited noise regime which makes it an attractive option for highly sensitive signal processing. Our work has implications for novel bolometers -- the low heat capacity of graphene together with JJ nonlinearity can result in an extremely sensitive microwave bolometer embedded inside a quantum noise-limited amplifier. In general, our work will open up exploration of scalable device architecture of 2D van der Waals materials by integrating a sensor with the quantum amplifier.
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Submitted 5 April, 2022;
originally announced April 2022.
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Suppression of $1/f$ noise in graphene due to non-scalar mobility fluctuations induced by impurity motion
Authors:
Masahiro Kamada,
Weijun Zeng,
Antti Laitinen,
Jayanta Sarkar,
Sheng-Shiuan Yeh,
Kirsi Tappura,
Heikki Seppä,
Pertti Hakonen
Abstract:
Low frequency resistance variations due to mobility fluctuations is one of the key factors of $1/f$ noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) device can be suppressed to zero at small magnetic fields, implying important technological benefits for low noise 2D devices. In this work, we provide direct evidence of anisotropic mobility fluctuations by demo…
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Low frequency resistance variations due to mobility fluctuations is one of the key factors of $1/f$ noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) device can be suppressed to zero at small magnetic fields, implying important technological benefits for low noise 2D devices. In this work, we provide direct evidence of anisotropic mobility fluctuations by demonstrating a strong field-induced suppression of noise in a high-mobility graphene Corbino disk, even though the device displays only a tiny amount of $1/f$ noise inherently. The suppression of the $1/f$ noise depends on charge density, showing less non-uniform mobility fluctuations away from the Dirac point with charge puddles. We model our results using a new approach based on impurity clustering dynamics and find our results consistent with the $1/f$ noise induced by scattering of carriers on mobile impurities forming clusters.
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Submitted 22 December, 2021;
originally announced December 2021.
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Electrical low-frequency $1/f^γ$ noise due to surface diffusion of scatterers on an ultra low noise graphene platform
Authors:
Masahiro Kamada,
Antti Laitinen,
Weijun Zeng,
Marco Will,
Jayanta Sarkar,
Kirsi Tappura,
Heikki Seppä,
Pertti Hakonen
Abstract:
Low-frequency $1/f^γ$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbant noise, we have investigated the formation of low-fre…
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Low-frequency $1/f^γ$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbant noise, we have investigated the formation of low-frequency noise while the mobility of surface adsorbants is varied by temperature. In our experiments, we measured low-frequency current noise in suspended monolayer graphene samples under the influence of adsorbed Ne atoms. Owing to the extremely small intrinsic noise of graphene in suspended Corbino geometry, we could resolve a combination of $1/f^γ$ and Lorentzian noise spectra induced by the presence of Ne. We find that the $1/f^γ$ noise is caused by surface diffusion of Ne atoms and by temporary formation of few-Ne-atom clusters. Our results support the idea that clustering dynamics of defects is relevant for understanding of $1/f$ noise in general metallic systems.
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Submitted 25 June, 2021; v1 submitted 23 June, 2021;
originally announced June 2021.
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Strong magnetoresistance in a graphene Corbino disk at low magnetic fields
Authors:
Masahiro Kamada,
Vanessa Gall,
Jayanta Sarkar,
Manohar Kumar,
Antti Laitinen,
Igor Gornyi,
Pertti Hakonen
Abstract:
We have measured magnetoresistance of suspended graphene in the Corbino geometry at magnetic fields up to $B=0.15\,$T, i.e., in a regime uninfluenced by Shubnikov-de Haas oscillations. The low-temperature relative magnetotoresistance $[R(B)-R(0)]/R(0)$ amounts to $4000 B^2\% $ at the Dirac point ($B$ in Tesla), with a quite weak temperature dependence below $30\,$K. A decrease in the relative magn…
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We have measured magnetoresistance of suspended graphene in the Corbino geometry at magnetic fields up to $B=0.15\,$T, i.e., in a regime uninfluenced by Shubnikov-de Haas oscillations. The low-temperature relative magnetotoresistance $[R(B)-R(0)]/R(0)$ amounts to $4000 B^2\% $ at the Dirac point ($B$ in Tesla), with a quite weak temperature dependence below $30\,$K. A decrease in the relative magnetoresistance by a factor of two is found when charge carrier density is increased to $|n| \simeq 3 \times 10^{-10}$ cm$^{-2}$. The gate dependence of the magnetoresistance allows us to characterize the role of scattering on long-range (Coulomb impurities, ripples) and short-range potential, as well as to separate the bulk resistance from the contact one. Furthermore, we find a shift in the position of the charge neutrality point with increasing magnetic field, which suggests that magnetic field changes the screening of Coulomb impurities around the Dirac point. The current noise of our device amounts to $10^{-23}$ A$^2$/$\sqrt{\textrm{Hz}}$ at $1\,$kHz at $4\,$K, which corresponds to a magnetic field sensitivity of $60$ nT/$\sqrt{\textrm{Hz}}$ in a background field of $0.15\,$T.
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Submitted 16 May, 2021; v1 submitted 7 May, 2021;
originally announced May 2021.
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Sputtered MoRe SQUID-on-tip for high-field magnetic and thermal nanoimaging
Authors:
Kousik Bagani,
Jayanta Sarkar,
Aviram Uri,
Michael L. Rappaport,
Martin E. Huber,
Eli Zeldov,
Yuri Myasoedov
Abstract:
Scanning nanoscale superconducting quantum interference devices (SQUIDs) are gaining interest as highly sensitive microscopic magnetic and thermal characterization tools of quantum and topological states of matter and devices. Here we introduce a novel technique of collimated differential-pressure magnetron sputtering for versatile self aligned fabrication of SQUID on tip (SOT) nanodevices, which…
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Scanning nanoscale superconducting quantum interference devices (SQUIDs) are gaining interest as highly sensitive microscopic magnetic and thermal characterization tools of quantum and topological states of matter and devices. Here we introduce a novel technique of collimated differential-pressure magnetron sputtering for versatile self aligned fabrication of SQUID on tip (SOT) nanodevices, which cannot be produced by conventional sputtering methods due to their diffusive, rather than the required directional point-source, deposition. The new technique provides access to a broad range of superconducting materials and alloys beyond the elemental superconductors employed in the existing thermal deposition methods, opening the route to greatly enhanced SOT characteristics and functionalities. Utilizing this method, we have developed MoRe SOT devices with sub-50 nm diameter, magnetic flux sensitivity of 1.2 $μΦ_0/Hz^{1/2}$ up to 3 T at 4.2 K, and thermal sensitivity better than 4 $μK/Hz^{1/2}$ up to 5 T, about five times higher than any previous report, paving the way to nanoscale imaging of magnetic and spintronic phenomena and of dissipation mechanisms in previously inaccessible quantum states of matter.
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Submitted 25 August, 2019;
originally announced August 2019.
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Observation of superparamagnetism in coexistence with quantum anomalous Hall C=$\pm$1 and C=0 Chern states
Authors:
E. O. Lachman,
M. Mogi,
J. Sarkar,
A. Uri,
K. Bagani,
Y. Anahory,
Y. Maysoedov,
M. E. Huber,
A. Tsukazaki,
M. Kawasaki,
Y. Tokura,
E. Zeldov
Abstract:
Simultaneous transport and scanning nanoSQUID-on-tip magnetic imaging studies in Cr-(Bi,Sb)$_2$Te$_3$ modulation-doped films reveal the presence of superparamagnetic order within the quantum anomalous Hall regime. In contrast to the expectation that a long-range ferromagnetic order is required for establishing the quantum anomalous Hall state, superparamagnetic dynamics of weakly interacting nanos…
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Simultaneous transport and scanning nanoSQUID-on-tip magnetic imaging studies in Cr-(Bi,Sb)$_2$Te$_3$ modulation-doped films reveal the presence of superparamagnetic order within the quantum anomalous Hall regime. In contrast to the expectation that a long-range ferromagnetic order is required for establishing the quantum anomalous Hall state, superparamagnetic dynamics of weakly interacting nanoscale magnetic islands is observed both in the plateau transition regions as well as within the fully quantized C=$\pm$1 Chern plateaus. Modulation do** of the topological insulator films is found to give rise to significantly larger superparamagnetic islands as compared to uniform magnetic do**, evidently leading to enhanced robustness of the quantum anomalous Hall effect. Nonetheless, even in this more robust quantum state, attaining full quantization of transport coefficients requires magnetic alignment of at least 95% of the superparamagnetic islands. The superparamagnetic order is also found within the incipient C=0 zero Hall plateau, which may host an axion state if the top and bottom magnetic layers are magnetized in opposite directions. In this regime, however, a significantly lower level of island alignment is found in our samples, hindering the formation of the axion state. Comprehension and control of superparamagnetic dynamics is thus a key factor in apprehending the fragility of the quantum anomalous Hall state and in enhancing the endurance of the different quantized states to higher temperatures for utilization of robust topological protection in novel devices.
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Submitted 17 October, 2017;
originally announced October 2017.
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Hanbury-Brown and Twiss exchange effects in a four-terminal tunnel junction
Authors:
Jayanta Sarkar,
Ciprian Padurariu,
Antti Puska,
Dmitry Golubev,
Pertti J. Hakonen
Abstract:
We investigate the current-current correlations in a four-terminal Al-AlOx-Al tunnel junction where shot noise dominates. We demonstrate that cross-correlations in the presence of two biasing sources of the Hanbury-Brown and Twiss type are much stronger (approximately twice) than an incoherent sum of correlations generated by single sources. The difference is due to voltage fluctuations of the cen…
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We investigate the current-current correlations in a four-terminal Al-AlOx-Al tunnel junction where shot noise dominates. We demonstrate that cross-correlations in the presence of two biasing sources of the Hanbury-Brown and Twiss type are much stronger (approximately twice) than an incoherent sum of correlations generated by single sources. The difference is due to voltage fluctuations of the central island that give rise to current-current correlations in the four contacts of the junction. Our measurements are in close agreement with results obtained using a simple theoretical model based on the theory of shot noise in multi-terminal conductors, generalized here to arbitrary contacts.
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Submitted 9 June, 2017;
originally announced June 2017.
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Linear magnetoresistance and surface to bulk coupling in topological insulator thin films
Authors:
Sourabh Singh,
R. K. Gopal,
Jit Sarkar,
Atul Pandey,
Bhavesh G. Patel,
Chiranjib Mitra
Abstract:
We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to e…
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We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the crossover field, where LMR sets in, decreases with increasing temperature. We propose that this cross over field can be used phenomenologically to estimate the strength of surface to bulk coupling.
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Submitted 3 February, 2017;
originally announced February 2017.
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Bulk Saturable absorption in Topological Insulator thin Films
Authors:
Radha Krishna Gopal,
Deepak K. S. Ambast,
Sourabh Singh,
Jit Sarkar,
Bipul Pal,
Chiranjib Mitra
Abstract:
We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films has been found remarkably improved by an order of magnitude compared to the values reported earlier in the literature. Past results from the literature are inconc…
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We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films has been found remarkably improved by an order of magnitude compared to the values reported earlier in the literature. Past results from the literature are inconclusive in establishing whether the saturable absorption is coming from surface states or the bulk. Specifically designed experiments with magnetically doped TI samples allow us to attribute the saturable absorption characteristic of TI to the bulk states. Detailed experimental procedures and possible explanation of observed results have been discussed.
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Submitted 9 December, 2016;
originally announced December 2016.
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Parallel and series conduction model in Topological Insulators
Authors:
Sourabh Singh,
R K Gopal,
Jit Sarkar,
C. Mitra
Abstract:
In the past few years there has been a surge in the material science engineering in order to synthesize bulk insulating and surface metallic Topological Insulating (TI) materials. This quest is not only theoretically important but also promising from the novel application perspective. The dependence of temperature on resistance (R-T) of a particular sample reveals a plethora of information about t…
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In the past few years there has been a surge in the material science engineering in order to synthesize bulk insulating and surface metallic Topological Insulating (TI) materials. This quest is not only theoretically important but also promising from the novel application perspective. The dependence of temperature on resistance (R-T) of a particular sample reveals a plethora of information about the electronic properties especially in a unique sample like TI where there are two components comprising of an insulating bulk and metallic surface states. Depending on the amount of intrinsic do** during the sample formation, the bulk can either couple or remain decoupled with the surface. The former leads to a metallic R-T profile whereas the latter is captured by an insulating R-T behavior. These two behaviors can be represented by series and parallel resistor models respectively. In this work we study the R-T behavior in the framework of resistor models capturing the essential features of our sample.
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Submitted 9 November, 2016;
originally announced November 2016.
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Nanoscale thermal imaging of dissipation in quantum systems
Authors:
Dorri Halbertal,
Jo Cuppens,
Moshe Ben Shalom,
Lior Embon,
Nitzan Shadmi,
Yonathan Anahory,
HR Naren,
Jayanta Sarkar,
Aviram Uri,
Yuval Ronen,
Yury Myasoedov,
Leonid Levitov,
Ernesto Joselevich,
Andre Konstantin Geim,
Eli Zeldov
Abstract:
Energy dissipation is a fundamental process governing the dynamics of physical, chemical, and biological systems. It is also one of the main characteristics distinguishing quantum and classical phenomena. In condensed matter physics, in particular, scattering mechanisms, loss of quantum information, or breakdown of topological protection are deeply rooted in the intricate details of how and where…
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Energy dissipation is a fundamental process governing the dynamics of physical, chemical, and biological systems. It is also one of the main characteristics distinguishing quantum and classical phenomena. In condensed matter physics, in particular, scattering mechanisms, loss of quantum information, or breakdown of topological protection are deeply rooted in the intricate details of how and where the dissipation occurs. Despite its vital importance the microscopic behavior of a system is usually not formulated in terms of dissipation because the latter is not a readily measureable quantity on the microscale. Although nanoscale thermometry is gaining much recent interest, the existing thermal imaging methods lack the necessary sensitivity and are unsuitable for low temperature operation required for study of quantum systems. Here we report a superconducting quantum interference nano-thermometer device with sub 50 nm diameter that resides at the apex of a sharp pipette and provides scanning cryogenic thermal sensing with four orders of magnitude improved thermal sensitivity of below 1 μK/Hz1/2. The non-contact non-invasive thermometry allows thermal imaging of very low nanoscale energy dissipation down to the fundamental Landauer limit of 40 fW for continuous readout of a single qubit at 1 GHz at 4.2 K. These advances enable observation of dissipation due to single electron charging of individual quantum dots in carbon nanotubes and reveal a novel dissipation mechanism due to resonant localized states in hBN encapsulated graphene, opening the door to direct imaging of nanoscale dissipation processes in quantum matter.
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Submitted 6 September, 2016;
originally announced September 2016.
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Tuning Chemical Potential in the Dirac Cone by Compositional Engineering
Authors:
R. K. Gopal,
Sourabh Singh,
Jit Sarkar,
Chiranjib Mitra
Abstract:
We report the successful formation of bulk insulating ternary topological insulators candidate Bi2Se2Te (BST) by pulsed laser deposition technique. The films were deposited with sequential ablation of separate Bi2Se3 (BS) and Bi2Te3 (BT) targets. From the X-ray diffraction analysis and temperature dependent resistivity we were able to conclude that the as grown thin films have ordered chalcogen la…
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We report the successful formation of bulk insulating ternary topological insulators candidate Bi2Se2Te (BST) by pulsed laser deposition technique. The films were deposited with sequential ablation of separate Bi2Se3 (BS) and Bi2Te3 (BT) targets. From the X-ray diffraction analysis and temperature dependent resistivity we were able to conclude that the as grown thin films have ordered chalcogen layers and the chemical potential in these thin films lie in the bulk gap. To realize entirely topological transport for any device applications it is essential to tune the chemical potential in the bulk gap of the Dirac cone. Magnetotransport data exhibits pronounced two dimensional weak-antilocalization behavior (WAL) at low temperatures. BS and BT thin films do not exhibit topological transport as the chemical potential does not lie entirely in the bulk gap. It was found that BST thin films grown with this cost effective and simple yet elegant technique using double target can be used to deposit quaternary TI thin films, thereby tuning the chemical potential at will in the gap.
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Submitted 12 March, 2016;
originally announced March 2016.
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Cross correlations in disordered, four-terminal graphene-ribbon conductor: Hanbury-Brown and Twiss exchange as a sign of non-universality of noise
Authors:
Zhenbing Tan,
Teemu Nieminen,
Antti Puska,
Jayanta Sarkar,
Pasi Lähteenmäki,
Fabian Duerr,
Charles Gould,
Laurens Molenkamp,
Kirill Nagaev,
Pertti Hakonen
Abstract:
We have investigated current-current correlations in a cross-shaped conductor made of graphene ribbons. We measured auto and cross correlations and compared them with the theoretical predictions for ideal diffusive conductors. Our data deviate from these predictions and agreement can be obtained only by adding contributions from occupation-number noise in the central region connecting the arms of…
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We have investigated current-current correlations in a cross-shaped conductor made of graphene ribbons. We measured auto and cross correlations and compared them with the theoretical predictions for ideal diffusive conductors. Our data deviate from these predictions and agreement can be obtained only by adding contributions from occupation-number noise in the central region connecting the arms of the cross. Furthermore, we have determined Hanbury -- Brown and Twiss (HBT) exchange correlations in this system. Contrary to expectations for a cross-shaped diffusive system, we find finite HBT exchange effects due to the occupation-number noise at the crossing. The strength of these HBT exchange correlations is found to vary with gate voltage, and very a distinct HBT effect with large fluctuations is observed near the Dirac point.
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Submitted 31 January, 2016;
originally announced February 2016.
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Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films
Authors:
R. K. Gopal,
Sourabh Singh,
Arpita Mandal,
Jit Sarkar,
Chiranjib Mitra
Abstract:
The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We report the tuning of the chemical potential in the bulk of Bi2Se2Te TI thin films, pinning it near the center of the bulk band gap, thereby suppressing the bulk ca…
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The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We report the tuning of the chemical potential in the bulk of Bi2Se2Te TI thin films, pinning it near the center of the bulk band gap, thereby suppressing the bulk carriers. The temperature dependent resistance of these films shows activated behavior down to 50K, followed by a metallic transition at lower temperatures, a hallmark of the robustness of TI surface states. Manifestation of topological protection and surface dominated transport is explained by 2D weak antilocalization phenomenon. We further explore the effect of surface to bulk coupling in TI in this work, which is captured by the number of effective conducting surface channels that participate in the transport. The presence of a single conducting channel indicates a strong surface to bulk coupling which is detrimental to purely topological transport. We demonstrate the decoupling of topological surface states on opposite surfaces of thin films, thereby suppressing the bulk transport. Our findings provide a deeper understanding of surface to bulk coupling along with topological transport behavior and their respective tunability.
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Submitted 1 December, 2016; v1 submitted 26 May, 2015;
originally announced May 2015.
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Surface Optical and Bulk Acoustic Phonons in the Topological Insulator, Bi2Se2Te
Authors:
Uditendu Mukhopadhyay,
Dipanjan Chaudhuri,
Jit Sarkar,
Sourabh Singh,
Radha Krishna Gopal,
Sandeep Tammu,
Prashanth C. Upadhya,
Chiranjib Mitra
Abstract:
We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given a careful analysis of variation of phonon frequency as a function of film thickness attributing this to existence of standing acoustic modes. However, no variat…
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We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given a careful analysis of variation of phonon frequency as a function of film thickness attributing this to existence of standing acoustic modes. However, no variation in the frequency of the optical phonon modes was found with film thickness. This indicates that the optical phonons intrinsically belong to the surface of the topological insulators. The fact that the acoustic phonons can be tuned by changing the film thickness has tremendous potential for room temperature low power spintronic devices and in topological quantum computation.
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Submitted 10 June, 2015; v1 submitted 25 April, 2015;
originally announced April 2015.
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Kinetically engendered sub-spinodal length scales in spontaneous dewetting of thin liquid films
Authors:
TirumalaRao Kotni,
Jayati Sarkar,
Rajesh Khanna
Abstract:
Numerical simulations of spontaneous dewetting of non-slip**, variable viscosity unstable thin liquid films on homogeneous substrates reveal the existence of sub-spinodal lengthscales through formation of satellite holes, a marker of nucleated dewetting and/or heterogeneous substrates, in the late stages of dewetting if the liquid viscosity decreases continually with decreasing film thickness. T…
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Numerical simulations of spontaneous dewetting of non-slip**, variable viscosity unstable thin liquid films on homogeneous substrates reveal the existence of sub-spinodal lengthscales through formation of satellite holes, a marker of nucleated dewetting and/or heterogeneous substrates, in the late stages of dewetting if the liquid viscosity decreases continually with decreasing film thickness. These films also show established signatures of slip** films such as faster rupture and flatter morphologies in the early stages even without invoking any slippage.
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Submitted 11 March, 2014;
originally announced March 2014.
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Differential Bloch Oscillating Transistor Pair
Authors:
Jayanta Sarkar,
Antti Puska,
Juha Hassel,
Pertti J. Hakonen
Abstract:
We examine a Bloch Oscillating Transistor pair as a differential stage for cryogenic low-noise measurements. Using two oppositely biased, nearly symmetric Bloch Oscillating Transistors, we measured the sum and difference signals in the current gain and transconductance modes while changing the common mode signal, either voltage or current. From the common mode rejection ratio we find values…
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We examine a Bloch Oscillating Transistor pair as a differential stage for cryogenic low-noise measurements. Using two oppositely biased, nearly symmetric Bloch Oscillating Transistors, we measured the sum and difference signals in the current gain and transconductance modes while changing the common mode signal, either voltage or current. From the common mode rejection ratio we find values $\sim 20$ dB even under non-optimal conditions. We also characterize the noise properties and obtain excellent noise performance for measurements having source impedances in the M$Ω$ range.
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Submitted 28 January, 2013; v1 submitted 25 January, 2013;
originally announced January 2013.
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Dynamics of Bloch oscillating transistor near bifurcation threshold
Authors:
Jayanta Sarkar,
Antti Puska,
Juha Hassel,
Pertti J. Hakonen
Abstract:
Tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. Bloch oscillating transistor is such a device. Here we show that bistable behaviour can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy $E_J$ of the device. We demonstrate record-large current gains for device ope…
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Tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. Bloch oscillating transistor is such a device. Here we show that bistable behaviour can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy $E_J$ of the device. We demonstrate record-large current gains for device operation near the bifurcation point at small $E_J$. From our results for the current gains at various $E_J$, we determine the bifurcation threshold on the $E_J$ - base current plane. The bifurcation threshold curve can be understood using the interplay of inter- and intra-band tunneling events.
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Submitted 23 January, 2013;
originally announced January 2013.
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Current-Phase Relation and Josephson Inductance of Superconducting Cooper Pair Transistor
Authors:
Antti Paila,
David Gunnarsson,
Jayanta Sarkar,
Mika A. Sillanpää,
Pertti J. Hakonen
Abstract:
We have investigated the Josephson inductance $L_J$ of a Superconducting Cooper Pair Transistor (SCPT). We traced the inductance using microwave reflection measurements on a tuned resonance circuit in which a SCPT was mounted in parallel to a $ \sim 200$ pH strip line inductance. When the inverse of the Josephson inductance, determined on the charge-phase bias plane for a SCPT with a Josephson t…
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We have investigated the Josephson inductance $L_J$ of a Superconducting Cooper Pair Transistor (SCPT). We traced the inductance using microwave reflection measurements on a tuned resonance circuit in which a SCPT was mounted in parallel to a $ \sim 200$ pH strip line inductance. When the inverse of the Josephson inductance, determined on the charge-phase bias plane for a SCPT with a Josephson to Coulomb energy ratio of $E_J/E_C =1.75$, is integrated over the phase, we obtain a current-phase relation, which is strongly non-sinusoidal near the charge degeneracy point.
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Submitted 7 October, 2009;
originally announced October 2009.
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Interband transitions and interference effects in superconducting qubits
Authors:
Antti Paila,
Jani Tuorila,
Mika Sillanpää,
David Gunnarsson,
Jayanta Sarkar,
Yuriy Makhlin,
Erkki Thuneberg,
Pertti Hakonen
Abstract:
We investigate phase-sensitive interference effects in a periodically $\sin(2πf_{\rm rf} t)$-driven, artificial two-state system connected to a microwave resonator at $f_{LC} \simeq 800$ MHz. We observe two kinds of multiphoton transitions in the two-state system, accompanied by: 1) Several quanta from the drive at $f_{\rm rf}$ and 2) one quantum at $f_{\rm rf}$ and several at $f_{LC}$. The form…
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We investigate phase-sensitive interference effects in a periodically $\sin(2πf_{\rm rf} t)$-driven, artificial two-state system connected to a microwave resonator at $f_{LC} \simeq 800$ MHz. We observe two kinds of multiphoton transitions in the two-state system, accompanied by: 1) Several quanta from the drive at $f_{\rm rf}$ and 2) one quantum at $f_{\rm rf}$ and several at $f_{LC}$. The former are described using phase-sensitive Landau-Zener transitions, while the latter are discussed in terms of vibronic transitions in diatomic molecules. Interference effects in the vibronic transitions governed by Franck-Condon coefficients are also considered.
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Submitted 9 January, 2009;
originally announced January 2009.
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Accessing nanomechanical resonators via a fast microwave circuit
Authors:
Mika A. Sillanpaa,
Jayanta Sarkar,
Jaakko Sulkko,
Juha Muhonen,
Pertti J. Hakonen
Abstract:
The measurement of micron-sized mechanical resonators by electrical techniques is difficult, because of the combination of a high frequency and a small mechanical displacement which together suppress the electromechanical coupling. The only electromagnetic technique proven up to the range of several hundred MHz requires the usage of heavy magnetic fields and cryogenic conditions. Here we show ho…
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The measurement of micron-sized mechanical resonators by electrical techniques is difficult, because of the combination of a high frequency and a small mechanical displacement which together suppress the electromechanical coupling. The only electromagnetic technique proven up to the range of several hundred MHz requires the usage of heavy magnetic fields and cryogenic conditions. Here we show how, without the need of either of them, to fully electrically detect the vibrations of conductive nanomechanical resonators up to the microwave regime. We use the electrically actuated vibrations to modulate an LC tank circuit which blocks the stray capacitance, and detect the created sideband voltage by a microwave analyzer. We show the novel technique up to mechanical frequencies of 200 MHz. Finally, we estimate how one could approach the quantum limit of mechanical systems.
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Submitted 29 October, 2008;
originally announced October 2008.
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Vibronic spectroscopy of an artificial molecule
Authors:
David Gunnarsson,
Jani Tuorila,
Antti Paila,
Jayanta Sarkar,
Erkki Thuneberg,
Yuriy Makhlin,
Pertti Hakonen
Abstract:
With advanced fabrication techniques it is possible to make nanoscale electronic structures that have discrete energy levels. Such structures are called artificial atoms because of analogy with true atoms. Examples of such atoms are quantum dots in semiconductor heterostructures and Josephson-junction qubits. It is also possible to have artificial atoms interacting with each other. This is an ar…
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With advanced fabrication techniques it is possible to make nanoscale electronic structures that have discrete energy levels. Such structures are called artificial atoms because of analogy with true atoms. Examples of such atoms are quantum dots in semiconductor heterostructures and Josephson-junction qubits. It is also possible to have artificial atoms interacting with each other. This is an artificial molecule in the sense that the electronic states are analogous to the ones in a molecule. In this letter we present a different type of artificial molecule that, in addition to electronic states, also includes the analog of nuclear vibrations in a diatomic molecule. Some of the earlier experiments could be interpreted using this analogy, including qubits coupled to oscillators and qubits driven by an intense field. In our case the electronic states of the molecule are represented by a Josephson-junction qubit, and the nuclear separation corresponds to the magnetic flux in a loop containing the qubit and an LC oscillator. We probe the vibronic transitions, where both the electronic and vibrational states change simultaneously, and find that they are analogous to true molecules. The vibronic transitions could be used for sideband cooling of the oscillator, and we see dam** up to sidebands of order 10.
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Submitted 12 May, 2008;
originally announced May 2008.
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Contact Instability in Adhesion and Debonding of Thin Elastic Films
Authors:
Manoj Gonuguntla,
Ashutosh Sharma,
Jayati Sarkar,
Subash A. Subramanian,
Moniraj Ghosh,
Vijay Shenoy
Abstract:
Based on experiments and 3-D simulations, we show that a soft elastic film during adhesion and debonding from a rigid flat surface undergoes morphological transitions to pillars, labyrinths and cavities, all of which have the same lateral pattern length scale, close to λ/H ~ 3 for thick films, H > 1 micrometer. The linear stability analysis and experiments show a new thin film regime where λ/H \…
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Based on experiments and 3-D simulations, we show that a soft elastic film during adhesion and debonding from a rigid flat surface undergoes morphological transitions to pillars, labyrinths and cavities, all of which have the same lateral pattern length scale, close to λ/H ~ 3 for thick films, H > 1 micrometer. The linear stability analysis and experiments show a new thin film regime where λ/H \approx 3+ 2 (γ/3 μH)^(1/4) (γis surface tension, μis shear modulus) because of significant surface energy penalty (for example, λ/H = 6 for H = 200 nm; μ= 1MPa).
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Submitted 27 June, 2006;
originally announced June 2006.
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Patterns, Forces and Metastable Pathways in Debonding of Elastic Films
Authors:
Jayati Sarkar,
Vijay Shenoy,
Ashutosh Sharma
Abstract:
The letter resolves several intriguing and fundamental aspects of debonding at soft interfaces, including the formation and persistence of regularly arranged nanocavities and bridges, ``adhesion-debonding hysteresis'', and vastly lower adhesive strengths compared to the absence of pattern formation. The analysis shows the hysteresis to be caused by an energy barrier that separates the metastable…
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The letter resolves several intriguing and fundamental aspects of debonding at soft interfaces, including the formation and persistence of regularly arranged nanocavities and bridges, ``adhesion-debonding hysteresis'', and vastly lower adhesive strengths compared to the absence of pattern formation. The analysis shows the hysteresis to be caused by an energy barrier that separates the metastable patterned configurations during withdrawal, and the debonded state. The metastable morphological pathways involving cavitation and peeling of contact zones engender substantially lower debonding forces.
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Submitted 21 October, 2003;
originally announced October 2003.