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Effect of photoinduced screening on the spectroscopic signature of exciton-phonon coupling
Authors:
Selene Mor,
Valentina Gosetti,
Vadim F. Agekyan,
Claudio Giannetti,
Luigi Sangaletti,
Stefania Pagliara
Abstract:
The light-mediated interaction of fermionic and bosonic excitations governs the optoelectronic properties of condensed matter systems. In photoexcited semiconductors, the coupling of electron-hole pairs (excitons) to coherent optical phonons enables a modulation of the excitonic resonance that is phase-locked to the frequency of the coupled vibrational mode. Moreover, due to the Coulombic nature o…
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The light-mediated interaction of fermionic and bosonic excitations governs the optoelectronic properties of condensed matter systems. In photoexcited semiconductors, the coupling of electron-hole pairs (excitons) to coherent optical phonons enables a modulation of the excitonic resonance that is phase-locked to the frequency of the coupled vibrational mode. Moreover, due to the Coulombic nature of excitons, their dynamics are sensitive to transient changes in the screening by the photoexcited carriers. Interestingly, the effect of photoinduced screening on the transient optical signal originating from the exciton dynamics coupled to phonons is not yet established. By means of broadband transient reflectance spectroscopy, we disclose how exciton-phonon coupling manifests in either presence or absence of dynamical screening in a layered semiconductor. Further, we unveil the promoting role of photoinduced screening on these exciton-phonon coupled dynamics as opposed to the case in which the unscreened exciton-exciton repulsion likely dominates the nonequilibrium optical response. These findings set a protocol to look at an excitonic resonance and its fundamental many-body interactions on the ultrafast timescale, and provide new perspectives on the access to nonequilibrium coupled dynamics.
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Submitted 18 March, 2024;
originally announced March 2024.
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Detection of a coherent excitonic state in the layered semiconductor BiI$_{3}$
Authors:
Valentina Gosetti,
Jorge Cervantes-Villanueva,
Davide Sangalli,
Alejandro Molina-Sánchez,
Vadim F. Agekyan,
Claudio Giannetti,
Luigi Sangaletti,
Selene Mor,
Stefania Pagliara
Abstract:
The measurement and manipulation of the coherent dynamics of excitonic states constitute a forefront research challenge in semiconductor optics and in quantum coherence-based protocols for optoelectronic technologies. Layered semiconductors have emerged as an ideal platform for the study of exciton dynamics with accessible and technologically relevant energy and time scales. Here, we investigate t…
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The measurement and manipulation of the coherent dynamics of excitonic states constitute a forefront research challenge in semiconductor optics and in quantum coherence-based protocols for optoelectronic technologies. Layered semiconductors have emerged as an ideal platform for the study of exciton dynamics with accessible and technologically relevant energy and time scales. Here, we investigate the sub-picosecond exciton dynamics in a van-der-Waals semiconductor upon quasi-resonant excitation, and achieve to single out an incipient coherent excitonic state. Combining broadband transient reflectance spectroscopy and simulations based on many-body perturbation theory, we reveal a transient enhancement of the excitonic line intensity that originates from the photoinduced coherent polarization that is phase-locked with the interacting electromagnetic field. This finding allows us to define the spectral signature of a coherent excitonic state and to experimentally track the dynamical crossover from coherent to incoherent exciton, unlocking the prospective optical control of an exciton population on the intrinsic quantum-coherence timescale.
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Submitted 20 November, 2023;
originally announced November 2023.
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Photoinduced coherent modulation of an excitonic resonance via coupling with coherent optical phonons
Authors:
Selene Mor,
Valentina Gosetti,
Alejandro Molina-Sánchez,
Davide Sangalli,
Simona Achilli,
Vadim. F. Agekyan,
Paolo Franceschini,
Claudio Giannetti,
Luigi Sangaletti,
Stefania Pagliara
Abstract:
The coupling of excitons with atomic vibrations plays a pivotal role on the nonequilibrium optical properties of layered semiconductors. However, addressing the dynamical interaction between excitons and phonons represents a hard task both experimentally and theoretically. By means of time-resolved broadband optical reflectivity combined with state-of-the-art ab-initio calculations of a bismuth tr…
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The coupling of excitons with atomic vibrations plays a pivotal role on the nonequilibrium optical properties of layered semiconductors. However, addressing the dynamical interaction between excitons and phonons represents a hard task both experimentally and theoretically. By means of time-resolved broadband optical reflectivity combined with state-of-the-art ab-initio calculations of a bismuth triiodide single crystal, we unravel the universal spectral fingerprints of exciton--phonon coupling in layered semiconductors. Furthermore, we microscopically relate a photoinduced coherent energy modulation of the excitonic resonance to coherent optical phonons, thereby tracking the extent of the photoinduced atomic displacement in real-space. Our findings represent a step forward on the road to coherent manipulation of the excitonic properties on ultrafast timescales.
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Submitted 26 May, 2021;
originally announced May 2021.
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Deep neural network for X-ray photoelectron spectroscopy data analysis
Authors:
Giovanni Drera,
Chahan M. Kropf,
Luigi Sangaletti
Abstract:
In this work, we characterize the performance of a deep convolutional neural network designed to detect and quantify chemical elements in experimental X-ray photoelectron spectroscopy data. Given the lack of a reliable database in literature, in order to train the neural network we computed a large ($>$100 k) dataset of synthetic spectra, based on randomly generated materials covered with a layer…
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In this work, we characterize the performance of a deep convolutional neural network designed to detect and quantify chemical elements in experimental X-ray photoelectron spectroscopy data. Given the lack of a reliable database in literature, in order to train the neural network we computed a large ($>$100 k) dataset of synthetic spectra, based on randomly generated materials covered with a layer of adventitious carbon. The trained net performs as good as standard methods on a test set of $\approx$ 500 well characterized experimental X-ray photoelectron spectra. Fine details about the net layout, the choice of the loss function and the quality assessment strategies are presented and discussed. Given the synthetic nature of the training set, this approach could be applied to the automatization of any photoelectron spectroscopy system, without the need of experimental reference spectra and with a low computational effort.
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Submitted 12 September, 2019;
originally announced September 2019.
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Band offset and gap tuning of tetragonal CuO-SrTiO3 heterojunctions
Authors:
Giovanni Drera,
Alessio Giampietri,
Alfredo Febbrari,
Maddalena Patrini,
Maria Cristina Mozzati,
Luigi Sangaletti
Abstract:
In this work we analyze the electronic structure at the junction between a SrTiO3 (001) single crystal and a thin tetragonal CuO layer, grown by off-axis RF-sputtering. A detailed characterization of the film growth, based on atomic force microscopy and X-ray photoelectron diffraction measurements, demonstrates the epitaxial growth. We report several markers of a thickness-dependent modification o…
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In this work we analyze the electronic structure at the junction between a SrTiO3 (001) single crystal and a thin tetragonal CuO layer, grown by off-axis RF-sputtering. A detailed characterization of the film growth, based on atomic force microscopy and X-ray photoelectron diffraction measurements, demonstrates the epitaxial growth. We report several markers of a thickness-dependent modification of the film gap, found on both Cu 2p and valence band spectra; through spectroscopic ellipsometry analysis, we provide a direct proof of a band gap increase of the tetragonal CuO layer (1.57 eV) with respect to the thicker monoclinic CuO layer (1.35 eV). This phenomenon is further discussed in the light of cluster calculations and DFT+U simulations. Finally, we report the full experimental band junction diagram, showing a staggered configuration suitable to charge-separation applications, such as photovoltaics and photocatalisys; this configuration is observed up to very low (<3 nm) film thickness due to the gap broadening effect.
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Submitted 30 January, 2019;
originally announced January 2019.
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Cation diffusion and hybridization effects at the Mn-GaSe(0001) interface probed by soft X-ray electron spectroscopies
Authors:
S. Dash,
G. Drera,
E. Magnano,
F. Bondino,
P. Galinetto,
M. C. Mozzati,
G. Salvinelli,
V. Aguekian,
L. Sangaletti
Abstract:
The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga cations and Mn-Se hybridization effects are found both in core level and valence band photoemission spectra. The Mn cation valence state is probed by XAS measurem…
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The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga cations and Mn-Se hybridization effects are found both in core level and valence band photoemission spectra. The Mn cation valence state is probed by XAS measurements at the Mn L-edge, which indicate that Mn diffuses into the lattice as a Mn2+ cation with negligible crystal field effects. The Mn spectral weight in the valence band is probed by resonant photoemission spectroscopy at the Mn L-edge, which also allowed an estimation of the charge transfer and Mott-Hubbard energies on the basis of impurity-cluster configuration-interaction model of the photoemission process. The charge transfer energy is found to scale with the energy gap of the system. Competing effects of Mn segregation on the surface have been identified, and the transition from the Mn diffusion through the surface to the segregation of metallic layers on the surface has been tracked by core-level photoemission.
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Submitted 13 May, 2013; v1 submitted 8 March, 2013;
originally announced March 2013.
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Band offsets and density of Ti3+ states probed by X-ray photoemission on LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors
Authors:
G. Drera,
G. Salvinelli,
A. Brinkman,
M. Huijben,
G. Koster,
H. Hilgenkamp,
G. Rijnders,
D. Visentin,
L. Sangaletti
Abstract:
A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by X-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti3+ states, respectively. It is shown that the dominant effects on the…
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A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by X-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti3+ states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low P(O2) yields Ti3+ states with higher density and lower binding energy as compared to the sample grown at high P(O2) or to the bare STO reference sample. Band offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, that displays the largest Ti 2p and Sr 3d peak widths.
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Submitted 23 November, 2012;
originally announced November 2012.
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Electronic structure and molecular orientation of a Zn-tetra-phenyl porphyrin multilayer on Si(111)
Authors:
C. Castellarin Cudia,
P. Vilmercati,
R. Larciprete,
C. Cepek,
G. Zampieri,
L. Sangaletti,
S. Pagliara,
A. Verdini,
A. Cossaro,
L. Floreano,
A. Morgante,
L. Petaccia,
S. Lizzit,
C. Battocchio,
G. Polzonetti,
A. Goldoni
Abstract:
The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the electronic spectra related to the HOMOs and LUMOs states. This is particularly important in order to understand the orbital interactions, the bond formation an…
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The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the electronic spectra related to the HOMOs and LUMOs states. This is particularly important in order to understand the orbital interactions, the bond formation and the evolution of the electronic properties with oxidation or reduction of the porphyrins in supramolecular donor-acceptor complexes used in photovoltaic devices.
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Submitted 7 September, 2005;
originally announced September 2005.
