Showing 1–50 of 64 results for author: Sanchez, F

Disentangling stress and strain effects in ferroelectric HfO2

Authors: Tingfeng Song, Veniero Lenzi, José P. B. Silva, Luís Marques, Ignasi Fina, Florencio Sánchez

Abstract: Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization and ferroelectric properties. Several factors such as dopants, oxygen vacancies, or stress, among others, have been investigated and shown to have a crucial role on optimizing the ferroelectric response. Stress generated… ▽ More Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization and ferroelectric properties. Several factors such as dopants, oxygen vacancies, or stress, among others, have been investigated and shown to have a crucial role on optimizing the ferroelectric response. Stress generated during deposition or annealing of thin films is a main factor determining the formed crystal phases and influences the lattice strain of the polar orthorhombic phase. It is difficult to discriminate between stress and strain effects on polycrystalline ferroelectric HfO2 films, and the direct impact of orthorhombic lattice strain on ferroelectric polarization has yet to be determined experimentally. Here, we analyze the crystalline phases and lattice strain of several series of doped HfO2 epitaxial films. We conclude that stress has a critical influence on metastable orthorhombic phase stabilization and ferroelectric polarization. On the contrary, the lattice deformation effects are much smaller than those caused by variations in the orthorhombic phase content. The experimental results are confirmed by density functional theory calculations on HfO2 and Hf0.5Zr0.5O2 ferroelectric phases. △ Less

Submitted 13 December, 2023; originally announced December 2023.

Journal ref: Applied Physical Reviews 10, 041415 (2023)

Domain wall statics and dynamics in nanowires with arbitrary Dzyaloshinskii-Moriya tensors

Authors: Adriano Di Pietro, Felipe García Sánchez, Gianfranco Durin

Abstract: The influence of different Dzyaloshinskii-Moriya interaction (DMI) tensor components on the static and dynamic properties of domain walls (DWs) in magnetic nanowires is investigated using one dimensional collective coordinates models and micromagnetic simulations. It is shown how the different contributions of the DMI can be compactly treated by separating the symmetric traceless, antisymmetric an… ▽ More The influence of different Dzyaloshinskii-Moriya interaction (DMI) tensor components on the static and dynamic properties of domain walls (DWs) in magnetic nanowires is investigated using one dimensional collective coordinates models and micromagnetic simulations. It is shown how the different contributions of the DMI can be compactly treated by separating the symmetric traceless, antisymmetric and diagonal components of the DMI tensor. First, we investigate the effect of all different DMI components on the static DW tilting in the presence and absence of in plane (IP) fields. We discuss the possibilities and limitations of this measurement approach for arbitrary DMI tensors. Secondly, the interplay of different DMI tensor components and their effect on the field driven dynamics of the DWs are studied and reveal a non-trivial effect of the Walker breakdown field of the material. It is shown how DMI tensors combining diagonal and off-diagonal elements can lead to a non-linear enhancement of the Walker field, in contrast with the linear enhancement obtainable in the usual cases (interface DMI or bulk DMI). △ Less

Submitted 12 September, 2023; originally announced September 2023.

Comments: 11 pages, 8 figures

Non-destructive X-ray imaging of patterned delta-layer devices in silicon

Authors: Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon, Jamie Bragg, Procopios C. Constantinou, Taylor J. Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Marek Bartkowiak, Y. Soh, Daniel Grolimund, Simon Gerber, Gabriel Aeppli

Abstract: The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for b… ▽ More The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here we exploit X-ray fluorescence to create an element-specific image of As dopants in silicon, with dopant densities in absolute units and a resolution limited by the beam focal size (here $\sim1~μ$m), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunnelling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, dominated by weak localisation, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the $1.5\times10^{10}$ Sv ($1.5\times10^{16}$ Rad/cm$^{-2}$) exposure of the device to X-rays, all transport data were unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3$\%$ for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, we foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm. △ Less

Submitted 14 April, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Journal ref: Adv. Electron. Mater. 2023, 2201212

Quantum coherence driven magnetic ordering in biased three level coordination compounds

Authors: Jhoan Alexis Fernandez Sanchez, Luis Alejandro Sierra Ossa, Henning Hammar, Jonas Fransson, Juan David Vasquez Jaramillo

Abstract: Novel understanding of the recent nanomagnet tailoring experiments and the possibility to further unveil the mechanisms by which the magnetic interactions arise in an atom by atom fashion covers importance as the demand for spin qubit and quantum state detection architectures increases. Here, we address the spin states of a molecular trimer comprising three localized spin moments embedded in a met… ▽ More Novel understanding of the recent nanomagnet tailoring experiments and the possibility to further unveil the mechanisms by which the magnetic interactions arise in an atom by atom fashion covers importance as the demand for spin qubit and quantum state detection architectures increases. Here, we address the spin states of a molecular trimer comprising three localized spin moments embedded in a metallic tunnel junction and show that the pair spin interactions can be engineered through the electronic structure of the molecular trimer. We show that bias and gate voltages induce either a completely ferromagnetic state of the localized moments or a spin frustrated state with different stabilities, and that switching between these states is possible on demand by electrical control. The role of quantum coherence in the molecular trimer is discussed with regards to the spin ordering as well as the interplay among electronic interference and induced dephasing by the metallic leads. This work sets foundations for more robust all electrically controlled spin architectures usable in quantum engineering systems and serves as a test bench for exploring unresolved questions in magnetic ordering and symmetry. △ Less

Submitted 15 February, 2022; v1 submitted 3 January, 2022; originally announced January 2022.

Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions

Authors: Milena Cervo Sulzbach, Huan Tan, Saul Estandia, Jaume Gazquez, Florencio Sanchez, Ignasi Fina, Josep Fontcuberta

Abstract: In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementatio… ▽ More In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementation. Here, we show that ferroelectric and electroresistive switching can be observed in ultrathin 2 nm epitaxial Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) tunnel junctions in large area capacitors (${\approx} 300μm^2$). We observe that the resistance area product is reduced to about 160 $Ω{\cdot}$cm$^2$ and 65 $Ω{\cdot}$cm$^2$ for OFF and ON resistance states, respectively. These values are two orders of magnitude smaller than those obtained in equivalent 5 nm HZO tunnel devices while preserving a similar OFF/ON resistance ratio (210 ${\%}$). The devices show memristive and spike-timing-dependent plasticity (STDP) behavior and good retention. Electroresistance and ferroelectric loops closely coincide, signaling ferroelectric switching as a driving mechanism for resistance change. △ Less

Submitted 23 August, 2021; originally announced August 2021.

Journal ref: ACS Appl. Electron. Mater. 2021

Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

Authors: Ignasi Fina, Florencio Sanchez

Abstract: About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again in the spotlight of the memories industry. Great efforts are being made to understand and control ferroelectric properties. Epitaxial films, which have fewer defects and a more controlled microstructure than polycrystal… ▽ More About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again in the spotlight of the memories industry. Great efforts are being made to understand and control ferroelectric properties. Epitaxial films, which have fewer defects and a more controlled microstructure than polycrystalline films, can be very useful for this purpose. Epitaxial films of ferroelectric HfO2 have been much less investigated, but after the first report in 2015 significant progress has been achieved. This review summarizes and discusses the main advances on epitaxial HfO2, considering growth, study of structural and ferroelectric properties, identification of the ferroelectric phase, and fabrication of devices. We hope this review will help researchers investigating epitaxial HfO2. It can also help extend the interest of the ferroelectric HfO2 community, now basically focused on polycrystalline samples, to epitaxial films. △ Less

Submitted 27 April, 2021; originally announced April 2021.

Comments: Review

Journal ref: ACS Applied Electronic Materials 3, 1530 (2021)

Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films

Authors: Saul Estandia, Jaume Gazquez, Maria Varela, Nico Dix, Mengdi Qian, Raul Solanas, Ignasi Fina, Florencio Sanchez

Abstract: Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared. A small amount of orthorhombic phase and low polarization is found in HZO films grown on… ▽ More Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared. A small amount of orthorhombic phase and low polarization is found in HZO films grown on La-doped BaSnO3 and Nb-doped SrTiO3, while null amounts of orthorhombic phase and polarization are detected in films on LaNiO3 and SrRuO3. The critical effect of the electrode on the stabilized phases is not consequence of differences in the electrode lattice parameter. The interface is critical, and engineering the HZO bottom interface on just a few monolayers of LSMO permits the stabilization of the orthorhombic phase. Furthermore, while the specific divalent ion (Sr or Ca) in the manganite is not relevant, reducing the La content causes a severe reduction of the amount of orthorhombic phase and the ferroelectric polarization in the HZO film. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Comments: Open access, published (2021) in Journal of Materials Chemistry C

Flexible antiferromagnetic FeRh tapes as memory elements

Authors: Ignasi Fina, Nico Dix, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta

Abstract: The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displa… ▽ More The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability. △ Less

Submitted 16 February, 2021; originally announced February 2021.

Journal ref: ACS Applied Materials & Interfaces 2020 12 (13), 15389-15395

Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films

Authors: Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Raul Solanas, Ignasi Fina, Florencio Sanchez

Abstract: Do** ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance - retention dilemma in La-doped epitaxial films. Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness… ▽ More Do** ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance - retention dilemma in La-doped epitaxial films. Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness range, whereas the coercive fields are similar, and the leakage current is substantially reduced. Compared to polycrystalline La-doped films, epitaxial La-doped films show more fatigue but there is not significant wake-up effect and endurance-retention dilemma. The persistent wake-up effect common to polycrystalline La-doped Hf0.5Zr0.5O2 films, is limited to a few cycles in epitaxial films. Despite fatigue, endurance in epitaxial La-doped films is more than 1010 cycles, and this good property is accompanied by excellent retention of more than 10 years. These results demonstrate that wake-up effect and endurance-retention dilemma are not intrinsic in La-doped Hf0.5Zr0.5O2. △ Less

Submitted 28 October, 2020; v1 submitted 27 October, 2020; originally announced October 2020.

Journal ref: ACS Appl. Electron. Mater. 2, 3221-3232 (2020)

Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Authors: Jike Lyu, Ignasi Fina, Florencio Sanchez

Abstract: The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue and long retention. Defects in the film and imprint field depend on deposition temperature and oxygen pressure, with an impact on fatigue and retention, respectively. Fatigue increases with substrate temp… ▽ More The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue and long retention. Defects in the film and imprint field depend on deposition temperature and oxygen pressure, with an impact on fatigue and retention, respectively. Fatigue increases with substrate temperature and pressure, and retention is short if low temperature is used. The growth window of epitaxial stabilization of ferroelectric Hf0.5Zr0.5O2 is narrower when all major ferroelectric properties (remanence, endurance and retention) are considered, but deposition temperature and pressure ranges are still sufficiently wide. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Journal ref: Applied Physics Letters 117, 072901 (2020)

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Authors: Milena Cervo Sulzbach, Saúl Estandía, Xiao Long, Jike Lyu, Nico Dix, Jaume Gàzquez, Matthew F. Chisholm, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta

Abstract: Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related… ▽ More Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (1000-100000 %) electroresistance when both phases coexist. △ Less

Submitted 12 June, 2020; originally announced June 2020.

Journal ref: Adv. Electron. Mater. 2020, 6, 1900852

Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices

Authors: Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta

Abstract: Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric monoclinic (m-HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarizat… ▽ More Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric monoclinic (m-HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarization switching and have detrimental effects on device performance. Here, it is shown that, by using suitable nanometric cap** layers deposited on HZO film, a radical improvement of the operation window of the tunnel device can be achieved. Crystalline SrTiO3 and amorphous AlOx are explored as cap** layers. It is observed that these layers conformally coat the HZO surface and allow to increase the yield and homogeneity of functioning ferroelectric junctions while strengthening endurance. Data show that the cap** layers block ionic-like transport channels across grain boundaries. It is suggested that they act as oxygen suppliers to the oxygen-getters grain boundaries in HZO. In this scenario it could be envisaged that these and other oxides could also be explored and tested for fully compatible CMOS technologies. △ Less

Submitted 12 June, 2020; originally announced June 2020.

Journal ref: Advanced Functional Materials 2020, 2002638

Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

Authors: Saul Estandía, Nico Dix, Matthew F. Chisholm, Ignasi Fina, Florencio Sánchez

Abstract: Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototy** emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To g… ▽ More Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototy** emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. These observed periodicities agree with the expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf0.5Zr0.5O2(111)/La2/3Sr1/3MnO3(001) heterostructure. △ Less

Submitted 4 June, 2020; originally announced June 2020.

Journal ref: Crystal Growth Design 20, 3801 (2020)

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Authors: Jike Lyu, Tingfeng Song, Ignasi Fina, Florencio Sánchez

Abstract: Ferroelectric HfO$_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that hi… ▽ More Ferroelectric HfO$_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 uC/cm2 in the pristine state), endurance (2Pr > 6 uC/cm2 after E11 cycles) and retention (2Pr > 12 uC/cm2 extrapolated at 10 years) using same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices. △ Less

Submitted 29 May, 2020; originally announced May 2020.

Comments: Supporting Information available at https://pubs.rsc.org/en/content/articlehtml/2020/nr/d0nr02204g (paper published as open access)

Journal ref: Nanoscale, 2020, 12, 11280

Reversible and magnetically unassisted voltage-driven switching of magnetization in FeRh/PMN-PT

Authors: Ignasi Fina, Alberto Quintana, Xavier Martí, Florencio Sánchez, Michael Foerster, Lucia Aballe, Jordi Sort, Josep Fontcuberta

Abstract: Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adj… ▽ More Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adjacent piezoelectric layer, the relative amount of antiferromagnetic and ferromagnetic regions can be tuned by an electric field applied to the piezoelectric material. Indeed, large variations in the saturation magnetization have been observed when straining FeRh films grown on suitable piezoelectric substrates. In view of its applications, the variations in the remanent magnetization rather than those of the saturation magnetization are the most relevant. Here, we show that in the absence of any bias external magnetic field, permanent and reversible magnetization changes as high as 34% can be induced by an electric field, which remain after this has been zeroed. Bulk and local magnetoelectric characterization reveals that the fundamental reason for the large magnetoelectric response observed at remanence is the expansion (rather than the nucleation) of ferromagnetic nanoregions. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Comments: Supporting videos: youtu.be/1_RbcO2tE64 ; youtu.be/wnRZxg0U6Fs

Journal ref: Appl. Phys. Lett. 113, 152901 (2018)

Dam**-like Torque in Monolayer 1T-TaS$_2$

Authors: Sajid Husain, Xin Chen, Rahul Gupta, Nilamani Behera, Prabhat Kumar, Tomas Edvinsson, Felipe Garcia Sanchez, Rimantas Brucas, Sujeet Chaudhary, Biplab Sanyal, Peter Svedlindh, Ankit Kumar

Abstract: A dam**-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$… ▽ More A dam**-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $Ω^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large dam**-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of dam**-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: 11pages,6figures

Journal ref: Nano Lett. 2020, 20, 9, 6372

Rotational polarization nanotopologies in BaTiO3/SrTiO3 superlattices

Authors: Saul Estandia, Florencio Sanchez, Matthew F. Chisholm, Jaume Gazquez

Abstract: Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under proper electrostatic and elastic conditions. These polar states may possess emerging properties not present in the bulk compounds and are promising for technological applications. Here, the observation of rotational… ▽ More Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under proper electrostatic and elastic conditions. These polar states may possess emerging properties not present in the bulk compounds and are promising for technological applications. Here, the observation of rotational polarization topologies at the nanoscale by means of aberration-corrected scanning transmission electron microscopy is reported in BaTiO3/SrTiO3 superlattices grown on cubic SrTiO3(001). The transition from a highly homogeneous polarization state to the formation of rotational nanodomains has been achieved by controlling the superlattice period while maintaining compressive clam** of the superlattice to the cubic SrTiO3 substrate. The nanodomains revealed in BaTiO3 prove that its nominal tetragonal structure also allows rotational polar textures. △ Less

Submitted 14 November, 2019; originally announced November 2019.

Comments: Published in Nanoscale. Open access

Journal ref: Nanoscale, 2019, 11, 21275

Modal frustration and periodicity breaking in artificial spin ice

Authors: R. Puttock, A. Manzin, V. Neu, F. Garcia Sanchez, A. Fernandez Scarioni, H. W. Schumacher, O. Kazakova

Abstract: Here an artificial spin ice (ASI) lattice is introduced that exhibits unique Ising and non-Ising behavior under specific field switching protocols because of the inclusion of coupled nanomagnets into the unit cell. In the Ising regime, a magnetic switching mechanism that generates a uni- or bimodal distribution of states dependent on the alignment of the field is demonstrated with respect to the l… ▽ More Here an artificial spin ice (ASI) lattice is introduced that exhibits unique Ising and non-Ising behavior under specific field switching protocols because of the inclusion of coupled nanomagnets into the unit cell. In the Ising regime, a magnetic switching mechanism that generates a uni- or bimodal distribution of states dependent on the alignment of the field is demonstrated with respect to the lattice unit cell. In addition, a method for generating a plethora of randomly distributed energy states across the lattice, consisting of Ising and Landau states, is investigated through magnetic force microscopy and micromagnetic modeling. We demonstrate that the dispersed energy distribution across the lattice is a result of the intrinsic design and can be finely tuned through control of the incident angle of a critical field. The present manuscript explores a complex frustrated environment beyond the 16-vertex Ising model for the development of novel logic-based technologies. △ Less

Submitted 28 September, 2020; v1 submitted 16 September, 2019; originally announced September 2019.

Journal ref: Small 2020, 2003141

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Authors: Saul Estandia, Nico Dix, Jaume Gazquez, Ignasi Fina, Jike Lyu, Matthew F. Chisholm, Josep Fontcuberta, Florencio Sanchez

Abstract: The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, det… ▽ More The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of Hf0.5Zr0.5O2. On La0.67Sr0.33MnO3 electrodes tensile strained most of the Hf0.5Zr0.5O2 film is orthorhombic, whereas the monoclinic phase is favored when La0.67Sr0.33MnO3 is relaxed or compressively strained. Therefore, the Hf0.5Zr0.5O2 films on TbScO3 and GdScO3 substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO3. The capability of having epitaxial doped HfO2 films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO2 films. △ Less

Submitted 4 September, 2019; originally announced September 2019.

Journal ref: ACS Applied Electronic Materials, 1, 1449 (2019)

Unconventional Ferroelectric Switching via Local Domain Wall Motion in Multiferroic $ε$-Fe2O3 Films

Authors: Xiangxiang Guan, Lide Yao, Konstantin Z. Rushchanskii, Sampo Inkinen, Richeng Yu, Marjana Ležaić, Florencio Sánchez, Martí Gich, Sebastiaan van Dijken

Abstract: Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polar… ▽ More Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polarization reversal. Unconventional ferroelectric switching in $ε$-Fe2O3 films, a material that combines ferrimagnetism and ferroelectricity at room temperature, is reported here. High-resolution in-situ scanning transmission electron microscopy (STEM) experiments and first-principles calculations demonstrate that polarization reversal in $ε$-Fe2O3 occurs around pre-existing domain walls only, triggering local domain wall motion in moderate electric fields of 250 - 500 kV/cm. Calculations indicate that the activation barrier for switching at domain walls is nearly a quarter of that corresponding to the most likely transition paths inside $ε$-Fe2O3 domains. Moreover, domain walls provide symmetry lowering, which is shown to be necessary for ferroelectric switching. Local polarization reversal in $ε$-Fe2O3 limits the macroscopic ferroelectric response and offers important hints on how to tailor ferroelectric properties by domain structure design in other relevant ferroelectric materials. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Authors: J. Lyu, I. Fina, R. Bachelet, G. Saint-Girons, S. Estandia, J. Gazquez, J. Fontcuberta, F. Sanchez

Abstract: SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4… ▽ More SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4 V present long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates paves the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2. △ Less

Submitted 5 June, 2019; originally announced June 2019.

Journal ref: Applied Physics Letters 114, 222901 (2019)

Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films

Authors: Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta, Florencio Sánchez

Abstract: The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant f… ▽ More The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant ferroelectric polarization, up to around 24 uC/cm2, depends on the amount of orthorhombic phase and interplanar spacing and increases with temperature and pressure for a fixed film thickness. The leakage current decreases with an increase in thickness or temperature, or when decreasing oxygen pressure. The coercive electric field (EC) depends on thickness (t) according to the coercive electric field (Ec) - thickness (t)-2/3 scaling, which is observed for the first time in ferroelectric hafnia, and the scaling extends to thicknesses down to around 5 nm. The proven ability to tailor the functional properties of high-quality epitaxial ferroelectric Hf0.5Zr0.5O2 films paves the way toward understanding their ferroelectric properties and prototy** devices. △ Less

Submitted 27 February, 2019; originally announced February 2019.

Journal ref: ACS Applied Electronic Materials 1, 220 (2019)

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Authors: Jike Lyu, Ignasi Fina, Josep Fontcuberta, Florencio Sánchez

Abstract: Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years… ▽ More Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years for writing field of around 5 MV/cm, and the capacitors show endurance up to 1E9 cycles for writing voltage of around 4 MV/cm. It is found that the formation of the orthorhombic ferroelectric phase depends critically on the bottom electrode, being achieved on La0.67Sr0.33MnO3 but not on LaNiO3. The demonstration of excellent ferroelectric properties in epitaxial films of Hf0.5Zr0.5O2 on Si(001) is relevant towards fabrication of devices that require homogeneity in the nanometer scale, as well as for better understanding of the intrinsic properties of this promising ferroelectric oxide. △ Less

Submitted 14 February, 2019; originally announced February 2019.

Journal ref: ACS Applied Materials & Interfaces 11, 6224 (2019)

Single-band to two-band superconductivity transition in two-dimensional oxide interfaces

Authors: G. Singh, A. Jouan, G. Herranz, M. Scigaj, F. Sanchez, L. Benfatto, S. Caprara, M. Grilli, G. Saiz, F. Couedo, C. Feuillet-Palma, J. Lesueur, N. Bergeal

Abstract: In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic do**. However, the presence of multiple superconducting condensates i… ▽ More In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic do**. However, the presence of multiple superconducting condensates in these systems has not yet been demonstrated. Here, we use resonant microwave transport to extract the superfluid stiffness of the (110)-oriented LaAlO3/SrTiO3 interface in the entire phase diagram. We evidence a transition from single-band to two-band superconductivity driven by electrostatic do**, which we relate to the filling of the different 3d-orbitals based on numerical simulations of the quantum well. Interestingly, the superconducting transition temperature decreases while the second band is populated, which challenges the Bardeen-Cooper-Schrieffer theory. To explain this behaviour, we propose that the superconducting order parameters associated with the two bands have opposite signs with respect to each other. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction

Authors: Hari Babu Vasili, Matheus Gamino, Jaume Gazquez, Florencio Sanchez, Manuel Valvidares, Pierluigi Gargiani, Eric Pellegrin, Josep Fontcuberta

Abstract: Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to a ferromagnetic instability and thus magnetic proximity e… ▽ More Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to a ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal to full understanding of spin current conductance. We report here x-ray absorption and magnetic circular dichroism (XMCD) at Pt-M and (Co,Fe)-L absorption edges and atomically-resolved energy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers where CoFe2O4 layers have been capped by Pt grown at different temperatures. It turns out that the ADMR differs dramatically, being either dominated by spin Hall magnetoresistance (SMR) associated to spin Hall effect or anisotropic magnetoresistance (AMR). The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe) alloying. These results allow disentangling spin accumulation from interfacial chemical reconstructions and for tailoring the angular dependent magnetoresistance. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Comments: ACS Applied Materials & Interfaces, 2018 (under revision)

Report number: Vol. 10 (14), pp 12031--12041

Journal ref: ACS Appl. Mater. Interfaces 2018

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

Authors: Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta, Florencio Sanchez

Abstract: Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can excee… ▽ More Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric polarization scales with the strain and therefore deposition temperature can be used as an efficient tool to tailor ferroelectric polarization. The developed strategy overcomes the main limitations of the conventional strain engineering methodologies based on substrate selection: it can be applied to films on specific substrates including Si(001) and perovskites, and it is not restricted to ultrathin films. △ Less

Submitted 24 January, 2018; originally announced January 2018.

Comments: Scientific Reports, Open access, https://www.nature.com/articles/s41598-017-18842-5

Journal ref: Scientific Reports 8, 495 (2018)

Infrared ellipsometry study of the photo-generated charge carriers at the (001) and (110) surfaces of SrTiO$_3$ crystals and the interface of corresponding LaAlO$_3$/SrTiO$_3$ heterostructures

Authors: M. Yazdi-Rizi, P. Marsik, B. P. P. Mallett, K. Sen, A. Cerreta, A. Dubroka, M. Scigaj, F. Sánchez, G. Herranz, C. Bernhard

Abstract: With infrared (IR) ellipsometry and DC resistance measurements we investigated the photo-do** at the (001) and (110) surfaces of SrTiO$_3$ (STO) single crystals and at the corresponding interfaces of LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures. In the bare STO crystals we find that the photo-generated charge carriers, which accumulate near the (001) surface, have a similar depth profile and s… ▽ More With infrared (IR) ellipsometry and DC resistance measurements we investigated the photo-do** at the (001) and (110) surfaces of SrTiO$_3$ (STO) single crystals and at the corresponding interfaces of LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures. In the bare STO crystals we find that the photo-generated charge carriers, which accumulate near the (001) surface, have a similar depth profile and sheet carrier concentration as the confined electrons that were previously observed in LAO/STO (001) heterostructures. A large fraction of these photo-generated charge carriers persist at low temperature at the STO (001) surface even after the UV light has been switched off again. These persistent charge carriers seem to originate from oxygen vacancies that are trapped at the structural domain boundaries which develop below the so-called antiferrodistortive transition at T* = 105 K. This is most evident from a corresponding photo-do** study of the DC transport in STO (110) crystals for which the concentration of these domain boundaries can be modified by applying a weak uniaxial stress. The oxygen vacancies and their trap** by defects are also the source of the electrons that are confined to the interface of LAO/STO (110) heterostructures which likely do not have a polar discontinuity as in LAO/STO (001). In the former, the trap** and clustering of the oxygen vacancies also has a strong influence on the anisotropy of the charge carrier mobility. We show that this anisotropy can be readily varied and even inverted by various means, such as a gentle thermal treatment, UV irradiation, or even a weak uniaxial stress. Our experiments suggest that extended defects, which develop over long time periods (of weeks to months), can strongly influence the response of the confined charge carriers at the LAO/STO (110) interface. △ Less

Submitted 8 February, 2017; v1 submitted 31 January, 2017; originally announced February 2017.

Comments: 12 pages, 6 figures, 4 tables

Journal ref: Phys. Rev. B 95, 195107 (2017)

Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions

Authors: Greta Radaelli, Diego Gutiérrez, Mengdi Qian, Ignasi Fina, Florencio Sánchez, Lorenzo Baldrati, Jakoba Heidler, Cinthia Piamonteze, Riccardo Bertacco, Josep Fontcuberta

Abstract: Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extrem… ▽ More Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: 20 pages

Journal ref: Adv. Electron. Mater. 2016, 1600368

An invisible non-volatile solid-state memory

Authors: J. Clarkson, C. Frontera, Z. Q. Liu, Y. Lee, J. Kim, K. Cordero, S. Wizotsky, F. Sanchez, J. Sort, S. L. Hsu, C Ko, J. Wu, H. M. Christen, J. T. Heron, D. G. Schlom, S. Salahuddin, L. Aballe, M. Foerster, N. Kioussis, J. Fontcuberta, I. Fina, R. Ramesh, X. Marti

Abstract: Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable res… ▽ More Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory. △ Less

Submitted 7 September, 2016; v1 submitted 12 April, 2016; originally announced April 2016.

Comments: 14 pages, 4 figures

Multiple strain-induced phase transitions in LaNiO3 thin films

Authors: M. C. Weber, M. Guennou, N. Dix, D. Pesquera, F. Sánchez, G. Herranz, J. Fontcuberta, L. López-Conesa, S. Estradé, F. Peiró, J. Iñiguez, J. Kreisel

Abstract: Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compress… ▽ More Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compressively strained films are different. Extensive map** of LaNiO3 phase stability is addressed by simulations, showing that a variety of crystalline phases are indeed stabilized under strain which may impact the electronic orbital hierarchy. The calculated Raman frequencies reproduce the principal features of the experimental spectra, supporting the validity of the multiple strain-driven structural transitions predicted by the simulations. △ Less

Submitted 2 March, 2016; originally announced March 2016.

Comments: 18 pages, 7 figures

Giant Optical Polarization Rotation Induced by Spin-Orbit Coupling in Polarons

Authors: Blai Casals, Rafael Cichelero, Pablo García Fernández, Javier Junquera, David Pesquera, Mariano Campoy-Quiles, Ingrid C. Infante, Florencio Sánchez, Josep Fontcuberta, Gervasi Herranz

Abstract: We have uncovered a giant gyrotropic magneto-optical response for doped ferromagnetic manganite La2/3Ca1/3MnO3 around the near room-temperature paramagnetic-to-ferromagnetic transition. At odds with current wisdom, where this response is usually assumed to be fundamentally fixed by the electronic band structure, we point to the presence of small polarons as the driving force for this unexpected ph… ▽ More We have uncovered a giant gyrotropic magneto-optical response for doped ferromagnetic manganite La2/3Ca1/3MnO3 around the near room-temperature paramagnetic-to-ferromagnetic transition. At odds with current wisdom, where this response is usually assumed to be fundamentally fixed by the electronic band structure, we point to the presence of small polarons as the driving force for this unexpected phenomenon. We explain the observed properties by the intricate interplay of mobility, Jahn-Teller effect and spin-orbit coupling of small polarons. As magnetic polarons are ubiquitously inherent to many strongly correlated systems, our results provide an original, general pathway towards the generation of gigantic gyrotropic responses that can be harnessed for nonreciprocal devices that exploit the polarization of light. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. Lett. 117, 026401 (2016)

Instability and Surface Potential Modulation of Self-Patterned (001)SrTiO3 Surfaces

Authors: Lucia Aballe, Sonia Matencio, Michael Foerster, Esther Barrena, Florencio Sanchez, Josep Fontcuberta, Carmen Ocal

Abstract: The (001)SrTiO3 crystal surface can be engineered to display a self-organized pattern of well-separated and nearly pure single-terminated SrO and TiO2 regions by high temperature annealing in oxidizing atmosphere. By using surface sensitive techniques we have obtained evidence of such surface chemical self-structuration in as-prepared crystals and unambiguously identified the local composition. Th… ▽ More The (001)SrTiO3 crystal surface can be engineered to display a self-organized pattern of well-separated and nearly pure single-terminated SrO and TiO2 regions by high temperature annealing in oxidizing atmosphere. By using surface sensitive techniques we have obtained evidence of such surface chemical self-structuration in as-prepared crystals and unambiguously identified the local composition. The contact surface potential at regions initially consisting of majority single terminations (SrO and TiO2) is determined to be smaller for SrO than for TiO2, in agreement with theoretical predictions, although the measured difference below 100 meV is definitely smaller than theoretical predictions for ideally pure single-terminated SrO and TiO2 surfaces. These relative values are maintained if samples are annealed in UHV up to 200 degrees Celsius. Annealing in UHV at higher temperature (400 degrees Celsius) preserves the surface morphology of self-assembled TiO2 and SrO rich regions, although a non-negligible chemical intermixing is observed. The most dramatic consequence is that the surface potential is reversed. It thus follows that electronic and chemical properties of (001)SrTiO3, widely used in oxide thin films growth, can largely vary before growth starts in a manner strongly dependent on temperature and pressure conditions. △ Less

Submitted 13 October, 2015; originally announced October 2015.

Journal ref: Chemistry of Materials 27, 6198 (2015)

Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers

Authors: Miren Isasa, Saül Vélez, Edurne Sagasta, Amilcar Bedoya-Pinto, Nico Dix, Florencio Sánchez, Luis E. Hueso, Josep Fontcuberta, Fèlix Casanova

Abstract: We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance indicates that the SMR contains a contribution that does not follow the bulk magnetization of CFO but it is a fingerprint of the complex magnetism at the surface of the… ▽ More We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance indicates that the SMR contains a contribution that does not follow the bulk magnetization of CFO but it is a fingerprint of the complex magnetism at the surface of the CFO layer, thus signaling SMR as a tool for map** surface magnetization. A systematic study of the SMR for different temperatures and CFO thicknesses gives us information impossible to obtain with any standard magnetometry technique. On one hand, surface magnetization behaves independently of the CFO thickness and does not saturate up to high fields, evidencing that the surface has its own anisotropy. On the other hand, characteristic zero-field magnetization steps are not present at the surface while they are relevant in the bulk, strongly suggesting that antiphase boundaries are the responsible of such intriguing features. In addition, a contribution from ordinary magnetoresistance of Pt is identified, which is only distinguishable due to the low resistivity of the $\textit{in-situ}$ grown Pt. △ Less

Submitted 28 July, 2016; v1 submitted 6 October, 2015; originally announced October 2015.

Comments: 19 pages, 8 figures, Supplemental Material

Journal ref: Physical Review Applied 6, 034007 (2016)

Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces

Authors: M. Valvidares, N. Dix, M. Isasa, K. Ollefs, F. Wilhelm, A. Rogalev, F. Sánchez, E. Pellegrin, A. Bedoya-Pinto, P. Gargiani, L. E. Hueso, F. Casanova, J. Fontcuberta

Abstract: Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 μ$_B$/Pt), thus strongly favoring the view t… ▽ More Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 μ$_B$/Pt), thus strongly favoring the view that the presence of CoFe2O4 does not induce the formation of magnetic moments in Pt. Therefore, the observed magnetoresistance cannot be attributed to some sort of proximity-induced magnetic moments at Pt ions and subsequent magnetic-field dependent scattering. It thus follows that either bulk (spin Hall and Inverse spin Hall Effects) or interface (Rashba) spin-orbit related effects dominate the observed magnetoresistance. Furthermore, comparison of bulk magnetization and XMCD data at (Fe,Co)-L2,3 edges suggests the presence of some spin disorder in the CoFe2O4 layer which may be relevant for the observed anomalous non-saturating field-dependence of spin Hall magnetoresistance. △ Less

Submitted 24 May, 2016; v1 submitted 5 October, 2015; originally announced October 2015.

Comments: 14 pages, 5 figures PDF of revised manuscript as finally accepted for publication in Phys. Rev. B

Journal ref: Physical Review B 93, 214415 (2016)

Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)

Authors: Mateusz Scigaj, Jaume Gazquez, Maria Varela, Josep Fontcuberta, Gervasi Herranz, Florencio Sanchez

Abstract: Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorp… ▽ More Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Journal ref: Solid State Ionics 281, 68 (2015)

Determination of the blocking temperature of magnetic nanoparticles: The good, the bad and the ugly

Authors: Pedro Mendoza Zélis, Ignacio Javier Bruvera, María Pilar Calatayud, Gerardo Fabián Goya, Francisco Homero Sánchez

Abstract: In a magnetization vs. temperature (M vs. T) experiment, the blocking region of a magnetic nanoparticle (MNP) assembly is the interval of T values were the system begins to respond to an applied magnetic field H when heating the sample from the lower reachable temperature. The location of this region is determined by the anisotropy energy barrier depending on the applied field H, the volume V, the… ▽ More In a magnetization vs. temperature (M vs. T) experiment, the blocking region of a magnetic nanoparticle (MNP) assembly is the interval of T values were the system begins to respond to an applied magnetic field H when heating the sample from the lower reachable temperature. The location of this region is determined by the anisotropy energy barrier depending on the applied field H, the volume V, the magnetic anisotropy constant K of the MNPs and the observing time of the technique. In the general case of a polysized sample, a representative blocking temperature value $T_B$ can be estimated from ZFC-FC experiments as a way to determine the effective anisotropy constant. In this work, a numerical solved Stoner-Wolfharth two level model with thermal agitation is used to simulate ZFC-FC curves of monosized and polysized samples and to determine the best method for obtaining a representative $T_B$ value of polysized samples. The results corroborate a technique based on the T derivative of the difference between ZFC and FC curves proposed by Micha et al(the good) and demonstrate its relation with two alternative methods: the ZFC maximum (the bad) and inflection point (the ugly). The derivative method is then applied to experimental data, obtaining the $T_B$ distribution of a polysized $Fe_3O_4$ MNP sample suspended in hexane with an excellent agreement with TEM characterization. △ Less

Submitted 18 August, 2015; originally announced August 2015.

Dipolar interaction and demagnetizing effects in magnetic nanoparticle dispersions: introducing the Mean Field Interacting Superparamagnet Model (MFISP Model)

Authors: F. H. Sánchez, P. Mendoza Zélis, M. L. Arciniegas, G. A. Pasquevich, M. B. Fernández van Raap

Abstract: A model is developed with the aim of analyzing interacting superparamagnets. Model is built from magnetic dipolar interaction and demagnetizing mean field concepts. A useful expression for effective demagnetizing factors is achieved, which allows for the analysis of non uniform spatial distributions of nanoparticles. This expression is a function of demagnetizing factors associated with specimen a… ▽ More A model is developed with the aim of analyzing interacting superparamagnets. Model is built from magnetic dipolar interaction and demagnetizing mean field concepts. A useful expression for effective demagnetizing factors is achieved, which allows for the analysis of non uniform spatial distributions of nanoparticles. This expression is a function of demagnetizing factors associated with specimen and clusters shapes, and of the mean distances between near neighbor nanoparticles and between clusters, relative to the characteristic sizes of each of these two types of objects, respectively. It explains effects of magnetic dipolar interactions such as the observation of apparent nanoparticle magnetic-moments smaller than real ones. It is shown that by performing a minimum set of experimental determinations, model application allows retrieval of intrinsic properties, like magnetic moment and susceptibility in the absence of interactions. It also permits the estimation of mean interparticle and intercluster relative distances, and of demagnetizing factors associated with clusters shape. An expression for magnetic dipolar energy per nanoparticle is also derived. Model experimental test was performed by analysis of results reported in the literature and of original results. They correspond to magnetite particles dispersed in PEGDA-600 polymer, and in PVA ferrogels. Experimental results display different magnetic response when prism shaped specimens are measured along principal directions. Intrinsic properties and structural information were retrieved from the analysis, in excellent agreement with information obtained from FESEM images. In the studied samples nanoparticles were found to be in close contact to each other within almost randomly oriented clusters. Intercluster mean relative-distance was found to vary between 2.2 and 7.5, depending on particles volume fraction. △ Less

Submitted 5 August, 2015; v1 submitted 18 July, 2015; originally announced July 2015.

Comments: 32 pages, figures and tables embedded in text

Journal ref: Phys. Rev. B 95, 134421 (2017)

Multiferroic Iron Oxide Thin Films at Room-Temperature

Authors: Marti Gich, Ignasi Fina, Alessio Morelli, Florencio Sanchez, Marin Alexe, Jaume Gazquez, Josep Fontcuberta, Anna Roig

Abstract: In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very c… ▽ More In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very challenging to integrate in devices. Here we report on the strategy to stabilize the metastable epsilon-Fe2O3 in thin film form, and we show that besides its already known ferrimagnetic nature, the films are also ferroelectric at 300 K with a remanent polarization of 1 microC/cm2. The film polarization shows long retention times and can be switched under small applied voltages. These characteristics make of epsilon-Fe2O3 the first single-ion transition-metal oxide which is ferro(ferri)magnetic and ferroelectric at room temperature. The simple composition of this new multiferroic oxide and the discovery of a robust path for its thin film growth may boost the exploitation of epsilon-Fe2O3 in novel devices. △ Less

Submitted 19 May, 2014; originally announced May 2014.

Comments: 27 pages, 11 figures; Advanced Materials 2014

Tailored surfaces of perovskite oxide substrates for conducted growth of thin films

Authors: Florencio Sanchez, Carmen Ocal, Josep Fontcuberta

Abstract: Oxide electronics relies on the availability of epitaxial oxide thin films. The extreme flexibility of the chemical composition of ABO3 perovskites and the broad spectrum of properties they cover, inspire the creativity of scientists and place perovskites in the lead of functional materials for advanced technologies. Moreover, emerging properties are being discovered at interfaces between distinct… ▽ More Oxide electronics relies on the availability of epitaxial oxide thin films. The extreme flexibility of the chemical composition of ABO3 perovskites and the broad spectrum of properties they cover, inspire the creativity of scientists and place perovskites in the lead of functional materials for advanced technologies. Moreover, emerging properties are being discovered at interfaces between distinct perovskites that could not be anticipated on the basis of those of the adjacent epitaxial layers. All dreamed new prospects require the use of suitable substrates for epitaxial growth. Perovskite single crystals are the workhorses of this activity and understanding and controlling their surface properties have become critical. In this tutorial review we will chiefly focus on the impact of the morphology and composition of the surface of ABO3 perovskite substrates on the growth mechanisms and properties of thin films epitaxially grown on them. As SrTiO3 is the most popular substrate, we will mostly concentrate on describing the current understanding and achievements for it. Illustrative examples of other perovskite substrates (LaAlO3, LSAT and DyScO3) will be also included. We will show that distinct chemical terminations can exist on the surfaces used for growth and we will review methods employed either to select the most appropriate one for specific growth to allow, for instance, tailoring the ultimate outmost epilayer, or to induce self-ordering to engineer long-range nanoscale patterns of chemical terminations. We will demonstrate the capacity of this knowledge by the growth of low-dimensional organic and inorganic structures. △ Less

Submitted 29 March, 2014; originally announced March 2014.

Comments: Tutorial review: F. Sanchez, C. Ocal and J. Fontcuberta, Chemical Society Reviews, 43, 2272 (2014) (you can contact [email protected] for a pdf)

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

Authors: M. Foerster, R. Bachelet, V. Laukhin, J. Fontcuberta, G. Herranz, F. Sanchez

Abstract: A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We… ▽ More A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We demonstrate the confinement of the conducting interface forming either long-range ordered nanometric stripes or isolated regions. Our results demonstrate that engineering the interface chemical termination is a suitable strategy towards nanoscale lateral confinement of two-dimensional high-mobility systems. △ Less

Submitted 22 January, 2014; originally announced January 2014.

Journal ref: Applied Physics Letters 100, 231607 (2012)

Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects

Authors: Miren Isasa, Amilcar Bedoya-Pinto, Saül Vélez, Federico Golmar, Florencio Sánchez, Luis E. Hueso, Josep Fontcuberta, Fèlix Casanova

Abstract: We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mi… ▽ More We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pum** or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing. △ Less

Submitted 9 October, 2014; v1 submitted 4 July, 2013; originally announced July 2013.

Comments: 13 pages, 5 figures

Journal ref: Applied Physics Letters 105, 142402 (2014)

Orientational tuning of the 2D-superconductivity in LaAlO3/SrTiO3 interfaces

Authors: G. Herranz, N. Bergeal, J. Lesueur, J. Gazquez, M. Scigaj, N. Dix, F. Sanchez, J. Fontcuberta

Abstract: The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properties beyond the conventional (001)-orientation. At temperatures below 200 mK, we have measured 2D superconductivity with a spatial extension significant… ▽ More The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properties beyond the conventional (001)-orientation. At temperatures below 200 mK, we have measured 2D superconductivity with a spatial extension significantly larger (d approx. 24 - 30 nm) than previously reported for (001)-oriented LaAlO3/SrTiO3 interfaces (d approx. 10 nm). The more extended superconductivity brings about the absence of violation of the Pauli paramagnetic limit for the upper critical fields, signaling the distinctive nature of the electronic structure of the (110)-oriented interface with respect to their (001)-counterparts △ Less

Submitted 10 May, 2013; originally announced May 2013.

Comments: 5 pages, 5 figures

High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces

Authors: Gervasi Herranz, Florencio Sánchez, Nico Dix, Mateusz Scigaj, Josep Fontcuberta

Abstract: In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral… ▽ More In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral TiO2 surface of (001)SrTiO3 has been shown to sustain 2DEL. We show that this restriction can be surpassed: (110) and (111) surfaces of SrTiO3 interfaced with epitaxial LaAlO3 layers, above a critical thickness, display 2DEL transport with mobilities similar to those of (001)SrTiO3. Moreover we show that epitaxial interfaces are not a prerequisite: conducting (110) interfaces with amorphous LaAlO3 and other oxides can also be prepared. These findings open a new perspective both for materials research and for elucidating the ultimate microscopic mechanism of carrier do**. △ Less

Submitted 30 October, 2012; originally announced October 2012.

Comments: Published in Scientific Reports (open access jounal of the Nature Publishing Group)

Journal ref: Scientific Reports 2,758 (2012)

Probing individual layers in functional oxide multilayers by wavelength-dependent Raman scattering

Authors: J. Kreisel, M. C. Weber, N. Dix, F. Sánchez, P. A. Thomas, J. Fontcuberta

Abstract: Integration of functional oxides on silicon requires the use of complex heterostructures involving oxides of which the structure and properties strongly depend on the strain state and strain-mediated interface coupling. The experimental observation of strain-related effects of the individual components remains challenging. Here we report a Raman scattering investigation of complex multilayer BaTiO… ▽ More Integration of functional oxides on silicon requires the use of complex heterostructures involving oxides of which the structure and properties strongly depend on the strain state and strain-mediated interface coupling. The experimental observation of strain-related effects of the individual components remains challenging. Here we report a Raman scattering investigation of complex multilayer BaTiO3/LaNiO3/CeO2/YSZ thin film structures on silicon. It is shown that the Raman signature of the multilayers differs significantly for three different laser wavelengths (633, 442 and 325 nm). Our results demonstrate that Raman scattering at various wavelengths allows both the identification of the individual layers of a functional oxide multilayers and monitoring their strain state. It is shown that all layers of the investigated multilayer are strained with respect to the bulk reference samples, and that strain induces a new crystal structure in the embedded LaNiO3. Based on this, we demonstrate that Raman scattering at various wavelengths offers a well-adapted, non-destructive probe for the investigation of strain and structure changes, even in complex thin film heterostructures. △ Less

Submitted 17 July, 2012; v1 submitted 15 May, 2012; originally announced May 2012.

Comments: Revised version, accepted for publication in Adv. Funct. Mater

Phase transition close to room temperature in BiFeO3 thin films

Authors: J. Kreisel, P. Jadhav, O. Chaix-Pluchery, M. Varela, N. Dix, F. Sanchez, J. Fontcuberta

Abstract: BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, displays a reversible temperature-induced phase transition at about 100\circ, thus close to room temperature. BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, displays a reversible temperature-induced phase transition at about 100\circ, thus close to room temperature. △ Less

Submitted 28 July, 2011; originally announced July 2011.

Comments: accepted in J. Phys.: Condens. Matter (Fast Track Communication)

Journal ref: J. Phys.: Condens. Matter 23 (2011) 342202

Strain analysis of multiferroic BiFeO3-CoFe2O4 nanostructures by Raman scattering

Authors: O. Chaix-Pluchery, C. Cochard, P. Jadhav, J. Kreisel, N. Dix, F. Sanchez, J. Fontcuberta

Abstract: We report a Raman scattering investigation of columnar BiFeO3-CoFe2O4 (BFO-CFO) epitaxial thin film nanostructures, where BFO pillars are embedded in a CFO matrix. The feasibility of a strain analysis is illustrated through an investigation of two nanostructures with different BFO-CFO ratios. We show that the CFO matrix presents the same strain state in both nanostructures, while the strain state… ▽ More We report a Raman scattering investigation of columnar BiFeO3-CoFe2O4 (BFO-CFO) epitaxial thin film nanostructures, where BFO pillars are embedded in a CFO matrix. The feasibility of a strain analysis is illustrated through an investigation of two nanostructures with different BFO-CFO ratios. We show that the CFO matrix presents the same strain state in both nanostructures, while the strain state of the BFO pillars depends on the BFO/CFO ratio with an increasing tensile strain along the out-of-plane direction with decreasing BFO content. Our results demonstrate that Raman scattering allows monitoring strain states in complex 3D multiferroic pillar/matrix composites. △ Less

Submitted 23 July, 2011; originally announced July 2011.

Comments: revised version submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 99, 072901 (2011)

Monte Carlo study of multicomponent monolayer adsorption on square lattices

Authors: Guillermo D. García, Fabricio O. Sánchez-Varretti, Fernando Bulnes, Antonio J. Ramirez-Pastor

Abstract: The monolayer adsorption process of interacting binary mixtures of species $A$ and $B$ on square lattices is studied through grand canonical Monte Carlo simulation in the framework of the lattice-gas model. Four different energies have been considered in the adsorption process: 1) $ε_0$, interaction energy between a particle (type $A$ or $B$) and a lattice site; 2) $w_{AA}$, interaction energy bet… ▽ More The monolayer adsorption process of interacting binary mixtures of species $A$ and $B$ on square lattices is studied through grand canonical Monte Carlo simulation in the framework of the lattice-gas model. Four different energies have been considered in the adsorption process: 1) $ε_0$, interaction energy between a particle (type $A$ or $B$) and a lattice site; 2) $w_{AA}$, interaction energy between two nearest-neighbor $A$ particles; 3) $w_{BB}$, interaction energy between two nearest-neighbor $B$ particles; 4) $w_{AB}=w_{BA}$, interaction energy between two nearest-neighbors being one of type $A$ and the other of type $B$. The adsorption process has been monitored through total and partial isotherms and differential heats of adsorption corresponding to both species of the mixture. Our main interest is in the repulsive lateral interactions, where a variety of structural orderings arise in the adlayer, depending on the interaction parameters ($w_{AA}$, $w_{BB}$ and $w_{AB}$). At the end of this work, we determine the phase diagram characterizing the phase transitions occurring in the system. A nontrivial interdependence between the partial surface coverage of both species is observed. △ Less

Submitted 30 May, 2011; originally announced May 2011.

Multilayer Adsorption of Interacting Polyatomics on Heterogeneous Surfaces

Authors: Fabricio Orlando Sánchez-Varretti, Guillermo Daniel García, Antonio José Ramirez-Pastor

Abstract: In the present work we introduce a generalized lattice-gas model to study the multilayer adsorption of interacting polyatomics on heterogeneous surfaces. Using an approximation in the spirit of the well-known Brunauer--Emmet--Teller (BET) model, a new theoretical isotherm is obtained in one- and two-dimensional lattices and compared with Monte Carlo simulation. In addition, we use the BET approach… ▽ More In the present work we introduce a generalized lattice-gas model to study the multilayer adsorption of interacting polyatomics on heterogeneous surfaces. Using an approximation in the spirit of the well-known Brunauer--Emmet--Teller (BET) model, a new theoretical isotherm is obtained in one- and two-dimensional lattices and compared with Monte Carlo simulation. In addition, we use the BET approach to analyze these isotherms and to estimate the monolayer volume. In all cases, we found that the use of the BET equation leads to an underestimate of the true monolayer capacity. However, significant compensation effects were observed for heterogeneous surfaces and attractive lateral interactions. △ Less

Submitted 23 May, 2011; originally announced May 2011.

Ferroelectricity and strain effects in orthorhombic YMnO3 thin films

Authors: J. Fontcuberta, I. Fina, L. Fàbrega, F. Sánchez, X. Martí, V. Skumryev

Abstract: We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are ferroelectric with a polarization along c-axis switchable by 90 degrees by an external magnetic field. When reducing film thickness and increasing epitaxial strain, th… ▽ More We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are ferroelectric with a polarization along c-axis switchable by 90 degrees by an external magnetic field. When reducing film thickness and increasing epitaxial strain, the ferroelectric order is progressively suppressed. Analysis of structural, dielectric and magnetic data indicates that suppression of ferroelectricity when reducing thickness is accompanied by an enlarged ratio a/b of the in-plane cell parameters of the orthorhombic structure and the appearance of a net magnetization. All results can be well described by considering the multiferroic phase diagram of orthorhombic manganites. △ Less

Submitted 14 December, 2010; originally announced December 2010.

Comments: Accepted: Phase Transitions

Strain-driven non-collinear magnetic ordering in orthorhombic epitaxial YMnO3 thin films

Authors: X. Marti, V. Skumryev, V. Laukhin, R. Bachelet, C. Ferrater, M. V. García-Cuenca, M. Varela, F. Sánchez, J. Fontcuberta

Abstract: We show that using epitaxial strain and chemical pressure in orthorhombic YMnO3 and Co-substituted (YMn0.95Co0.05O3) thin films, a ferromagnetic response can be gradually introduced and tuned. These results, together with the measured anisotropy of the magnetic response, indicate that the unexpected observation of ferromagnetism in orthorhombic o-RMnO3 (R= Y, Ho, Tb, etc) films originates from str… ▽ More We show that using epitaxial strain and chemical pressure in orthorhombic YMnO3 and Co-substituted (YMn0.95Co0.05O3) thin films, a ferromagnetic response can be gradually introduced and tuned. These results, together with the measured anisotropy of the magnetic response, indicate that the unexpected observation of ferromagnetism in orthorhombic o-RMnO3 (R= Y, Ho, Tb, etc) films originates from strain-driven breaking of the fully compensated magnetic ordering by pushing magnetic moments away from the antiferromagnetic [010] axis. We show that the resulting canting angle and the subsequent ferromagnetic response, gradually increase (up to ~ 1.2\degree) by compression of the unit cell. We will discuss the relevance of these findings, in connection to the magnetoelectric response of orthorhombic manganites. △ Less

Submitted 12 February, 2011; v1 submitted 20 October, 2010; originally announced October 2010.

Comments: Text + Figs Accepted in J. Appl. Phys

Journal ref: J. Appl. Phys. 108, 123917 (2010)