Showing 1–50 of 135 results for author: Samarth, N

Anomalous electronic energy relaxation and soft phonons in the Dirac semimetal Cd$_3$As$_2$

Authors: Rishi Bhandia, David Barbalas, Run Xiao, Juan R. Chamorro, Tyrel M. McQueen, Nitin Samarth, N. P. Armitage

Abstract: We have used a combination of linear response time-domain THz spectroscopy (TDTS) and high-field non-linear THz spectroscopy to separately probe the electronic momentum and energy relaxation rates respectively of the Dirac semimetal Cd$_3$As$_2$. We find, consistent with prior measurements, that Cd$_3$As$_2$ has an enormous nonlinearities in the THz frequency range. We extract the momentum relaxat… ▽ More We have used a combination of linear response time-domain THz spectroscopy (TDTS) and high-field non-linear THz spectroscopy to separately probe the electronic momentum and energy relaxation rates respectively of the Dirac semimetal Cd$_3$As$_2$. We find, consistent with prior measurements, that Cd$_3$As$_2$ has an enormous nonlinearities in the THz frequency range. We extract the momentum relaxation rate of Cd$_3$As$_2$ using Drude fits to the optical conductivity. We also conduct THz range 2D coherent spectroscopy. The dominant response is a pump-probe signal, which allow us to separately extract the energy relaxation rate. We find that the rate of energy relaxation decreases down to the lowest measured temperatures. We connect this to Cd$_3$As$_2$ anomalous lattice dynamics, evidence for which is found in its low thermal conductivity and soft phonons in Raman scattering. The lack of a peak in the energy relaxation rate as a function of T can be connected to the linear in T dependence of the current relaxation e.g. the phonon scattering is elastic down to the lowest measured temperatures approximately 120 K. △ Less

Submitted 5 May, 2024; originally announced May 2024.

Comments: 9 pages, 4 figures

Exploring nonequilibrium Andreev resonances in ultraclean graphene Andreev interferometers

Authors: Asmaul Smitha Rashid, Le Yi, Takashi Taniguchi, Kenji Watanabe, Nitin Samarth, Régis Mélin, Morteza Kayyalha

Abstract: We study nonequilibrium Andreev resonances in a voltage-biased graphene three-terminal Josephson junction (JJ). We observe periodic oscillations of resistance with maxima at multiples of the magnetic flux quantum (noninversion regime). As we increase the bias voltage, we further observe a transition point beyond which oscillations exhibit a $π$ phase shift (inversion regime) with maxima of resista… ▽ More We study nonequilibrium Andreev resonances in a voltage-biased graphene three-terminal Josephson junction (JJ). We observe periodic oscillations of resistance with maxima at multiples of the magnetic flux quantum (noninversion regime). As we increase the bias voltage, we further observe a transition point beyond which oscillations exhibit a $π$ phase shift (inversion regime) with maxima of resistance occuring at multiples of half-flux quantum. At this transition point, the frequency of the oscillations is doubled. We develop a model based on the coupling of the static Andreev bound states (ABSs) to the nonequilibrium Fermi surface of graphene to explain the observed noninversion to inversion crossovers. Our model associates these crossovers to microscopic phase-sensitive Andreev reflections which couple the normal and superfluid components of the current. Our findings show that multiterminal JJs can be used to engineer unconventional energy-phase relations such as those expected in the $π$-shifted ABSs without relying on quartet and Floquet physics. These nonequilibrium ABSs could potentially find applications in superconducting $π$ qubits. △ Less

Submitted 14 May, 2024; v1 submitted 5 May, 2024; originally announced May 2024.

Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure

Authors: Saurav Islam, Emma Steinebronn, Kaijie Yang, Bimal Neupane, Juan Chamorro, Supriya Ghosh, K. Andre Mkhoyan, Tyrel M. McQueen, Yuanxi Wang, Chaoxing Liu, Nitin Samarth

Abstract: We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from… ▽ More We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the vicinal Cd$_3$As$_2$ layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real space spin textures in a ferromagnet. △ Less

Submitted 27 March, 2024; originally announced March 2024.

Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures

Authors: Hemian Yi, Yi-Fan Zhao, Ying-Ting Chan, Jiaqi Cai, Ruobing Mei, Xianxin Wu, Zi-Jie Yan, Ling-Jie Zhou, Ruoxi Zhang, Zihao Wang, Stephen Paolini, Run Xiao, Ke Wang, Anthony R. Richardella, John Singleton, Laurel E. Winter, Thomas Prokscha, Zaher Salman, Andreas Suter, Purnima P. Balakrishnan, Alexander J. Grutter, Moses H. W. Chan, Nitin Samarth, Xiaodong Xu, Weida Wu , et al. (2 additional authors not shown)

Abstract: When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferr… ▽ More When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation. △ Less

Submitted 7 December, 2023; originally announced December 2023.

Comments: 14 pages, 4 figures. Accepted by Science. Comments are welcome

Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence

Authors: Yongxi Ou, Wilson Yanez-Parreño, Yu-sheng Huang, Supriya Ghosh, Cüneyt Şahin, Max Stanley, Sandra Santhosh, Saurav Islam, Anthony Richardella, K. Andre Mkhoyan, Michael E. Flatté, Nitin Samarth

Abstract: Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin… ▽ More Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin conversion in a canonical topological insulator, Bi$_{1-x}$Sb$_x$, to address this fundamentally unresolved question. We use spin-torque ferromagnetic resonance measurements to accurately probe the charge-to-spin conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$~thin films of high structural quality spanning the entire range of composition, including both trivial and topological band structures, as verified using {\it in vacuo} angle-resolved photoemission spectroscopy. From these measurements, we deduce the effective spin Hall conductivity (SHC) and find excellent agreement with the values predicted by tight-binding calculations for the intrinsic SHC of the bulk bands. These results provide strong evidence that the strong spin-orbit entanglement of bulk states well below the Fermi energy connects directly to the SHC in epitaxial Bi$_{1-x}$Sb$_x$~films interfaced with a metallic ferromagnet. The excellent agreement between theory and experiment points to the generic value of analyses focused entirely on bulk properties, even for topological systems involving non-conserved spin currents. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Epitaxial growth and characterization of Bi$_{1-x}$Sb$_x$ thin films on (0001) sapphire substrates

Authors: Yu-Sheng Huang, Saurav Islam, Yongxi Ou, Supriya Ghosh, Anthony Richardella, K. Andre Mkhoyan, Nitin Samarth

Abstract: We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy reveals epitaxial growth of films of reasonable structural quality. This is furth… ▽ More We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy reveals epitaxial growth of films of reasonable structural quality. This is further confirmed via x-ray diffraction pole figures that determine the epitaxial registry between the thin film and substrate. We further investigate the microscopic structure of thin films via Raman spectroscopy, demonstrating how the vibrational modes vary as the composition changes and discussing the implications for the crystal structure. We also characterize the samples using electrical transport measurements. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Journal ref: APL Mater. 12, 021106 (2024)

Temperature dependence and limiting mechanisms of the upper critical field of FeSe thin films

Authors: M. Stanley, Y. Li, J. C. Palmstrom, J. L. Thompson, K. D. Halanayake, D. Reifsnyder-Hickey, R. D. McDonald, S. A. Crooker, N. Trivedi, N. Samarth

Abstract: We use magnetoresistance measurements at high magnetic field (B \leq 65 T) and low temperature (T \geq 500 mK) to gain fresh insights into the behavior of the upper critical field, Hc2, in superconducting ultrathin FeSe films of varying degrees of disorder, grown by molecular beam epitaxy on SrTiO3. Measurements of Hc2 across samples with a widely varying superconducting critical temperature (1.2… ▽ More We use magnetoresistance measurements at high magnetic field (B \leq 65 T) and low temperature (T \geq 500 mK) to gain fresh insights into the behavior of the upper critical field, Hc2, in superconducting ultrathin FeSe films of varying degrees of disorder, grown by molecular beam epitaxy on SrTiO3. Measurements of Hc2 across samples with a widely varying superconducting critical temperature (1.2 K \leq Tc \leq 21 K) generically show similar qualitative temperature dependence. We analyze the temperature dependence of Hc2 in the context of Werthamer-Helfand-Hohenberg (WHH) theory. The analysis yields parameters that indicate a strong Pauli paramagnetic pair-breaking mechanism which is also reflected by pseudo-isotropic superconductivity in the limit of zero temperature. In the lower Tc samples, we observe a spin-orbit scattering driven enhancement of Hc2 above the strongly-coupled Pauli paramagnetic limit. We also observe clear deviations from WHH theory at low temperature, regardless of Tc. We attribute this to the multi-band superconductivity of FeSe and possibly to the emergence of a low temperature, high field superconducting phase. △ Less

Submitted 29 October, 2023; originally announced October 2023.

Journal ref: Phys. Rev. B 109, 094514 (2024)

Dirac-Fermion-Assisted Interfacial Superconductivity in Epitaxial Topological Insulator/Iron Chalcogenide Heterostructures

Authors: Hemian Yi, Lun-Hui Hu, Yi-Fan Zhao, Ling-Jie Zhou, Zi-Jie Yan, Ruoxi Zhang, Wei Yuan, Zihao Wang, Ke Wang, Danielle Reifsnyder Hickey, Anthony R. Richardella, John Singleton, Laurel E. Winter, Xianxin Wu, Moses H. W. Chan, Nitin Samarth, Chao-Xing Liu, Cui-Zu Chang

Abstract: Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement, mainly due to the potential use of its excitations (Majorana zero modes) in a fault-tolerant topological quantum computer 1,2. TSC can be created in electronic systems where the topological and superconducting orders coexist3, motivating the continued exploration of candidate mater… ▽ More Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement, mainly due to the potential use of its excitations (Majorana zero modes) in a fault-tolerant topological quantum computer 1,2. TSC can be created in electronic systems where the topological and superconducting orders coexist3, motivating the continued exploration of candidate material platforms to this end. Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures that host emergent interfacial superconductivity when a non-superconducting antiferromagnet (FeTe) is interfaced with a topological insulator (TI) (Bi, Sb)2Te3 wherein the chemical potential can be tuned through varying the Bi/Sb ratio. By performing in-vacuo angle-resolved photoemission spectroscopy (ARPES) and ex-situ electrical transport measurements, we find that the superconducting transition temperature and the upper critical magnetic field are suppressed when the chemical potential approaches the Dirac point. This observation implies a direct correlation between the interfacial superconductivity and Dirac electrons of the TI layer. We provide evidence to show that the observed interfacial superconductivity and its chemical potential dependence is the result of the competition between the Ruderman-Kittel-Kasuya-Yosida-type ferromagnetic coupling mediated by Dirac surface states and antiferromagnetic exchange couplings that generate the bicollinear antiferromagnetic order in the FeTe layer. The Dirac-fermion-assisted interfacial superconductivity in (Bi,Sb)2Te3/FeTe heterostructures provides a new approach to probe TSC and Majorana physics in hybrid devices and potentially constitutes an alternative platform for topological quantum computation. △ Less

Submitted 13 October, 2023; originally announced October 2023.

Comments: 32 pages and 4 figures. Accepted by Nature Communications

Journal ref: Nature Commun. 14,7119 (2023)

Off-Resonant Detection of Domain Wall Oscillations Using Deterministically Placed Nanodiamonds

Authors: Jeffrey Rable, Jyotirmay Dwivedi, Nitin Samarth

Abstract: Nitrogen-vacancy (NV) centers in diamond offer a sensitive method of measuring the spatially localized dynamics of magnetization and associated spin textures in ferromagnetic materials. We use NV centers in a deterministically positioned nanodiamond to demonstrate off-resonant detection of GHz-scale microwave field driven oscillations of a single domain wall (DW). The technique exploits the enhanc… ▽ More Nitrogen-vacancy (NV) centers in diamond offer a sensitive method of measuring the spatially localized dynamics of magnetization and associated spin textures in ferromagnetic materials. We use NV centers in a deterministically positioned nanodiamond to demonstrate off-resonant detection of GHz-scale microwave field driven oscillations of a single domain wall (DW). The technique exploits the enhanced relaxation of NV center spins due to the broadband stray fields generated by an oscillating DW pinned at an engineered defect in a lithographically patterned ferromagnetic nanowire. Discrepancies between the observed DW oscillation frequency and predictions from micromagnetic simulations suggest extreme sensitivity of DW dynamics to patterning imperfections such as edge roughness. These experiments and simulations identify potential pathways toward quantum spintronic devices that exploit current driven DWs as nanoscale microwave generators for qubit control, greatly increasing the driving field at an NV center and thus drastically reducing the π pulse time. △ Less

Submitted 27 June, 2023; originally announced June 2023.

Comments: Submitted to npj Spintronics

Journal ref: npj Spintronics 1, 2 (2023)

Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure

Authors: Arpita Mitra, Run Xiao, Wilson Yanez, Yongxi Ou, Juan Chamorro, Tyrel McQueen, Alexander J. Grutter, Julie A. Borchers, Michael R. Fitzsimmons, Timothy R. Charlton, Nitin Samarth

Abstract: Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through do** with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn… ▽ More Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through do** with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructures grown by molecular beam epitaxy. We report the comprehensive characterization of these heterostructures using structural probes (atomic force microscopy, x-ray diffraction, scanning transmission electron microscopy), angle-resolved photoemission spectroscopy, electrical magneto-transport, magnetometry, and polarized neutron reflectometry. Measurements of the magnetoresistance and Hall effect in the temperature range 2 K - 20 K show signatures that could be consistent with either a proximity effect or spin-dependent scattering of charge carriers in the Cd$_3$As$_2$ channel. Polarized neutron reflectometry sets constraints on the interpretation of the magnetotransport studies by showing that (at least for temperatures above 6 K) any induced magnetization in the Cd$_3$As$_2$ itself must be relatively small ($<$ 14 emu/cm$^3$). △ Less

Submitted 1 June, 2023; originally announced June 2023.

Journal ref: Phys. Rev. Materials 7, 094201 (2023)

Thin film growth of the Weyl semimetal NbAs

Authors: Wilson Yanez, Yu-Sheng Huang, Supriya Ghosh, Saurav Islam, Emma Steinebronn, Anthony Richardella, K. Andre Mkhoyan, Nitin Samarth

Abstract: We report the synthesis and characterization of thin films of the Weyl semimetal NbAs grown on GaAs (100) and GaAs (111)B substrates. By choosing the appropriate substrate, we can stabilize the growth of NbAs in the (001) and (100) directions. We combine x-ray characterization with high-angle annular dark field scanning transmission electron microscopy to understand both the macroscopic and micros… ▽ More We report the synthesis and characterization of thin films of the Weyl semimetal NbAs grown on GaAs (100) and GaAs (111)B substrates. By choosing the appropriate substrate, we can stabilize the growth of NbAs in the (001) and (100) directions. We combine x-ray characterization with high-angle annular dark field scanning transmission electron microscopy to understand both the macroscopic and microscopic structure of the NbAs thin films. We show that these films are textured with domains that are tens of nanometers in size and that, on a macroscopic scale, are mostly aligned to a single crystalline direction. Finally, we describe electrical transport measurements that reveal similar behavior in films grown in both crystalline directions, namely carrier densities of $\sim 10^{21} - 10^{22} $ △ Less

Submitted 29 April, 2023; v1 submitted 27 April, 2023; originally announced April 2023.

Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2

Authors: Run Xiao, Saurav Islam, Wilson Yanez, Yongxi Ou, Nitin Samarth, Haiwen Liu, X. C. Xie, Juan Chamorro, Tyrel M. McQueen

Abstract: Time-reversal invariance and inversion symmetry are responsible for the topological band structure in Dirac semimetals. These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes via the magnetic-field dependence and gate voltage-dependence of universa… ▽ More Time-reversal invariance and inversion symmetry are responsible for the topological band structure in Dirac semimetals. These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes via the magnetic-field dependence and gate voltage-dependence of universal conductance fluctuations in top-gated nanowires of the prototypical Dirac semimetal Cd3As2. As the magnetic field is increased beyond the phase-breaking field, we find a factor of sqrt(2) reduction in the magnitude of the universal conductance fluctuations, in agreement with numerical calculations that study the effect of broken time reversal symmetry in a 3D Dirac semimetal. In contrast, the magnitude of the fluctuations increases monotonically as the chemical potential is gated away from the charge neutrality point. This effect cannot be attributed to broken inversion symmetry, but can be explained by Fermi surface anisotropy. The concurrence between experimental data and theory in our study provides unequivocal evidence that universal conductance fluctuations are the dominant source of intrinsic transport fluctuations in mesoscopic Cd3As2 devices and offers a promising general methodology for probing the effects of broken symmetry in topological quantum materials. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Journal ref: Nano Letters 6/15/2023

Magnetic-field-free nonreciprocal transport in graphene multi-terminal Josephson junctions

Authors: Fan Zhang, Asmaul Smitha Rashid, Mostafa Tanhayi Ahari, George J. de Coster, Takashi Taniguchi, Kenji Watanabe, Matthew J. Gilbert, Nitin Samarth, Morteza Kayyalha

Abstract: Nonreciprocal superconducting devices have attracted growing interest in recent years as they potentially enable directional charge transport for applications in superconducting quantum circuits. Specifically, the superconducting diode effect has been explored in two-terminal devices that exhibit superconducting transport in one current direction while showing dissipative transport in the opposite… ▽ More Nonreciprocal superconducting devices have attracted growing interest in recent years as they potentially enable directional charge transport for applications in superconducting quantum circuits. Specifically, the superconducting diode effect has been explored in two-terminal devices that exhibit superconducting transport in one current direction while showing dissipative transport in the opposite direction. Here, we exploit multi-terminal Josephson junctions (MTJJs) to engineer magnetic-field-free nonreciprocity in multi-port networks. We show that when treated as a two-port electrical network, a three-terminal Josephson junction (JJ) with an asymmetric graphene region exhibits reconfigurable two-port nonreciprocity. We observe nonreciprocal (reciprocal) transport between superconducting terminals with broken (preserved) spatial mirror symmetry. We explain our observations by considering a circuit-network of JJs with different critical currents. △ Less

Submitted 13 February, 2024; v1 submitted 12 January, 2023; originally announced January 2023.

Journal ref: Phys. Rev. Applied 21, 034011, 2024

Anomalous magneto-thermoelectric behavior in massive Dirac materials

Authors: Yanan Li, Huichao Wang, **gyue Wang, Chunming Wang, Yanzhao Liu, Jun Ge, **g**g Niu, Wenjie Zhang, Pinyuan Wang, Ran Bi, **glei Zhang, Ji Yan Dai, Jiaqiang Yan, David Mandrus, Nitin Samarth, Haizhou Lu, Xiaosong Wu, Jian Wang

Abstract: Extensive studies of electron transport in Dirac materials have shown positive magneto-resistance (MR) and positive magneto-thermopower (MTP) in a magnetic field perpendicular to the excitation current or thermal gradient. In contrast, measurements of electron transport often show a negative longitudinal MR and negative MTP for a magnetic field oriented along the excitation current or thermal grad… ▽ More Extensive studies of electron transport in Dirac materials have shown positive magneto-resistance (MR) and positive magneto-thermopower (MTP) in a magnetic field perpendicular to the excitation current or thermal gradient. In contrast, measurements of electron transport often show a negative longitudinal MR and negative MTP for a magnetic field oriented along the excitation current or thermal gradient; this is attributed to the chiral anomaly in Dirac materials. Here, we report a very different magneto-thermoelectric transport behavior in the massive Dirac material ZrTe5. Although thin flakes show a commonly observed positive MR in a perpendicular magnetic field, distinct from other Dirac materials, we observe a sharp negative MTP. In a parallel magnetic field, we still observe a negative longitudinal MR, however, a remarkable positive MTP is observed for the fields parallel to the thermal gradients. Our theoretical calculations suggest that this anomalous magneto-thermoelectric behavior can be attributed to the screened Coulomb scattering. This work demonstrates the significance of impurity scattering in the electron transport of topological materials and provides deep insight into the novel magneto-transport phenomena in Dirac materials. △ Less

Submitted 30 November, 2022; originally announced November 2022.

Thermally-generated spin current in the topological insulator Bi$_2$Se$_3$

Authors: Rakshit Jain, Max Stanley, Arnab Bose, Anthony R. Richardella, Xiyue S. Zhang, Timothy Pillsbury, David A. Muller, Nitin Samarth, Daniel C. Ralph

Abstract: We complete measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents in the topological insulator Bi$_2$Se$_3$ by quantifying the efficiency with which thermal gradients can generate transverse spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnesistance for bilayers of Bi$_2$Se$_3$/CoFeB. We… ▽ More We complete measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents in the topological insulator Bi$_2$Se$_3$ by quantifying the efficiency with which thermal gradients can generate transverse spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnesistance for bilayers of Bi$_2$Se$_3$/CoFeB. We find that Bi$_2$Se$_3$ does generate substantial thermally-driven spin currents. A lower bound for the ratio of spin current to thermal gradient is $J_s/\nabla_x T$ = (4.9 $\pm$ 0.9) $\times$ 10$^{6}$ ($\hbar/2e$) A m$^{-2}$ / K $μ$m$^{-1}$, and a lower bound for the magnitude of the spin Nernst ratio is $-$0.61 $\pm$ 0.11. The spin Nernst ratio for Bi$_2$Se$_3$ is the largest among all materials measured to date, 2-3 times larger compared to previous measurements for the heavy metals Pt and W. △ Less

Submitted 11 October, 2022; originally announced October 2022.

Andreev processes in mesoscopic multi-terminal graphene Josephson junctions

Authors: Fan Zhang, Asmaul Smitha Rashid, Mostafa Tanhayi Ahari, Wei Zhang, Krishnan Mekkanamkulam Ananthanarayanan, Run Xiao, George J. de Coster, Matthew J. Gilbert, Nitin Samarth, Morteza Kayyalha

Abstract: There is growing interest in using multi-terminal Josephson junctions (MTJJs) as a platform to artificially emulate topological phases and to investigate complex superconducting mechanisms such as quartet and multiplet Cooper pairings. Current experimental signatures in MTJJs have led to conflicting interpretations of the salient features. In this work, we report a collaborative experimental and t… ▽ More There is growing interest in using multi-terminal Josephson junctions (MTJJs) as a platform to artificially emulate topological phases and to investigate complex superconducting mechanisms such as quartet and multiplet Cooper pairings. Current experimental signatures in MTJJs have led to conflicting interpretations of the salient features. In this work, we report a collaborative experimental and theoretical investigation of graphene-based four-terminal Josephson junctions. We observe resonant features in the differential resistance maps that resemble those ascribed to multiplet Cooper pairings. To understand these features, we model our junctions using a circuit network of coupled two-terminal resistively and capacitively shunted junctions (RCSJs). Under appropriate bias current, the model predicts that a current flowing between two diagonal terminals in a four-terminal geometry may be represented as a sinusoidal function of a weighted sum of the superconducting phases. We show that starting from a semi-classical model with diffusive current-phase relations, the MTJJ effectively emulates a general form of the expected current-phase relation for multiplet Cooper pairings. Our study therefore suggests that differential resistance measurements alone are insufficient to conclusively distinguish resonant Andreev reflection processes from semi-classical circuit-network effects. △ Less

Submitted 24 October, 2022; v1 submitted 9 October, 2022; originally announced October 2022.

Comments: 9 pages, 8 figures

Integer quantum Hall effect and enhanced g-factor in quantum confined Cd3As2 films

Authors: Run Xiao, Junyi Zhang, Juan Chamorro, **woong Kim, Tyrel M. McQueen, David Vanderbilt, Morteza Kayyalha, Yi Li, Nitin Samarth

Abstract: We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν = 1) and at spin-degenerate higher index Landau levels with even filling factors (ν = 2,4,6). With increasing quan… ▽ More We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν = 1) and at spin-degenerate higher index Landau levels with even filling factors (ν = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau level spin degeneracy at ν = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivity. Tight-binding calculations show that the enhanced g-factor likely arises from a combination of quantum confinement and corrections from nearby subbands. We also comment on the magnetic field induced transition from an insulator to a quantum Hall liquid when the chemical potential is near the charge neutrality point. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

Authors: Alexander Vera, Boyang Zheng, Wilson Yanez, Kaijie Yang, Seong Yeoul Kim, Jimmy C. Kotsakidis, Hesham El-Sherif, Gopi Krishnan, Roland J. Koch, Timothy A. Bowen, Chengye Dong, Yuanxi Wang, Maxwell Wetherington, Eli Rotenberg, Nabil Bassim, Adam L. Friedman, Robert M. Wallace, Chaoxing Liu, Nitin Samarth, Vincent H. Crespi, Joshua A. Robinson

Abstract: A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report centimeter-scale synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predomin… ▽ More A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report centimeter-scale synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex-situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5x increase in the effective field ratio compared to control samples. △ Less

Submitted 27 March, 2024; v1 submitted 13 May, 2022; originally announced May 2022.

Comments: 27 pages, 5 figures. Supporting Information included (16 pages, 14 figures, 1 table)

Giant spin torque efficiency in naturally oxidized polycrystalline TaAs thin films

Authors: Wilson Yanez, Yongxi Ou, Run Xiao, Supriya Ghosh, Jyotirmay Dwivedi, Emma Steinebronn, Anthony Richardella, K. Andre Mkhoyan, Nitin Samarth

Abstract: We report the measurement of efficient charge-to-spin conversion at room temperature in Weyl semimetal/ferromagnet heterostructures with both oxidized and pristine interfaces. Polycrystalline films of the Weyl semimetal, TaAs, are grown by molecular beam epitaxy on (001) GaAs and interfaced with a metallic ferromagnet (Ni$_{0.8}$Fe$_{0.2}$). Spin torque ferromagnetic resonance (ST-FMR) measurement… ▽ More We report the measurement of efficient charge-to-spin conversion at room temperature in Weyl semimetal/ferromagnet heterostructures with both oxidized and pristine interfaces. Polycrystalline films of the Weyl semimetal, TaAs, are grown by molecular beam epitaxy on (001) GaAs and interfaced with a metallic ferromagnet (Ni$_{0.8}$Fe$_{0.2}$). Spin torque ferromagnetic resonance (ST-FMR) measurements in samples with an oxidized interface yield a spin torque efficiency as large as $ξ_{\mathrm{FMR}}=0.45\pm 0.25$ for a 8 nm Ni$_{0.8}$Fe$_{0.2}$ layer thickness. By studying ST-FMR in these samples with varying Ni$_{0.8}$Fe$_{0.2}$ layer thickness, we extract a dam**-like torque efficiency as high as $ξ_{\mathrm{DL}}=1.36\pm 0.66$. In samples with a pristine (unoxidized) interface, the spin torque efficiency has opposite sign to that observed in oxidized samples ($ξ_{\mathrm{FMR}}=-0.27\pm 0.14$ for a 5 nm Ni$_{0.8}$Fe$_{0.2}$ layer thickness). We also find a lower bound on the spin Hall conductivity ($424 \pm 110 \frac{\hbar}{e}$ S/cm) which is surprisingly consistent with theoretical predictions for the single crystal Weyl semimetal state of TaAs. △ Less

Submitted 21 February, 2022; originally announced February 2022.

Journal ref: Phys. Rev. Applied 18, 054004 (2022)

Local ferromagnetic resonance measurements of mesoscopically patterned ferromagnets using deterministically placed nanodiamonds

Authors: Jeffrey Rable, Benjamin Piazza, Jyotirmay Dwivedi, Nitin Samarth

Abstract: Nitrogen-vacancy centers in diamond have recently been established as effective sensors of the magnetization dynamics in vicinal ferromagnetic materials. We demonstrate sub-100 nm placement accuracy of nitrogen-vacancy-containing nanodiamonds and use these as local sensors that probe optically detected ferromagnetic resonance in mesoscopically patterned Permalloy islands. These measurements reveal… ▽ More Nitrogen-vacancy centers in diamond have recently been established as effective sensors of the magnetization dynamics in vicinal ferromagnetic materials. We demonstrate sub-100 nm placement accuracy of nitrogen-vacancy-containing nanodiamonds and use these as local sensors that probe optically detected ferromagnetic resonance in mesoscopically patterned Permalloy islands. These measurements reveal variations in the ferromagnetic resonance signal at different sites on these structures with distinct behavior in the edge and the bulk of patterned features. These test measurements establish an easily implemented approach for spatially targeted measurements of spin dynamics in mesoscale ferromagnets. In principle, the methodology can also be extended to local studies of nanoscale ferromagnets such as single magnetic nanowires and nanoparticles. △ Less

Submitted 25 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. Applied 18, 064004 (2022)

Crossover of Ising- to Rashba-Type Superconductivity in Epitaxial Bi2Se3/Monolayer NbSe2 Heterostructures

Authors: Hemian Yi, Lun-Hui Hu, Yuanxi Wang, Run Xiao, Jiaqi Cai, Danielle Reifsnyder Hickey, Chengye Dong, Yi-Fan Zhao, Ling-Jie Zhou, Ruoxi Zhang, Anthony R. Richardella, Nasim Alem, Joshua A. Robinson, Moses H. W. Chan, Xiaodong Xu, Nitin Samarth, Chao-Xing Liu, Cui-Zu Chang

Abstract: A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scalable synthesis of the TI/superconductor heterostructures. Although the growth of epitaxial TI films on s-wave superconductors has been achieved, it re… ▽ More A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scalable synthesis of the TI/superconductor heterostructures. Although the growth of epitaxial TI films on s-wave superconductors has been achieved, it remains an outstanding challenge for synthesizing atomically thin TI/superconductor heterostructures, which are critical for engineering the TSC phase. Here, we used MBE to grow Bi2Se3 films with the controlled thickness on monolayer NbSe2 and performed in-situ angle-resolved photoemission spectroscopy and ex-situ magneto-transport measurements on these Bi2Se3/monolayer NbSe2 heterostructures. We found that the emergence of Rashba-type bulk quantum well bands and spin-nondegenerate surface states coincides with a marked suppression of the in-plane upper critical magnetic field of the superconductivity in Bi2Se3/monolayer NbSe2 heterostructures. This is the signature of a crossover from Ising- to Rashba-type superconducting pairings, induced by altering Bi2Se3 film thickness. Our work opens a new route for exploring a robust TSC phase in TI/Ising superconductor heterostructures. △ Less

Submitted 18 April, 2022; v1 submitted 29 December, 2021; originally announced December 2021.

Comments: 27 pages, 4 pages, comments are welcome

Journal ref: Nature Mater. 21, 1366(2022)

Direct visualization of electronic transport in a quantum anomalous Hall insulator

Authors: G. M. Ferguson, Run Xiao, Anthony R. Richardella, David Low, Nitin Samarth, Katja C. Nowack

Abstract: A quantum anomalous Hall (QAH) insulator is characterized by quantized Hall and vanishing longitudinal resistances at zero magnetic field that are protected against local perturbations and independent of sample details. This insensitivity makes the microscopic details of the local current distribution inaccessible to global transport measurements. Accordingly, the current distributions that give r… ▽ More A quantum anomalous Hall (QAH) insulator is characterized by quantized Hall and vanishing longitudinal resistances at zero magnetic field that are protected against local perturbations and independent of sample details. This insensitivity makes the microscopic details of the local current distribution inaccessible to global transport measurements. Accordingly, the current distributions that give rise to the transport quantization are unknown. Here we use magnetic imaging to directly visualize the transport current in the QAH regime. As we tune through the QAH plateau by electrostatic gating, we clearly identify a regime in which the sample transports current primarily in the bulk rather than along the edges. Furthermore, we image the local response of the magnetization to electrostatic gating. Combined, these measurements suggest that incompressible regions carry the current within the QAH regime. Our observations indicate that the self-consistent electrostatics of the sample play a central role in determining the current distribution. Identifying the appropriate microscopic picture of electronic transport in QAH insulators and other topologically non-trivial states of matter is a crucial step towards realizing their potential in next-generation quantum devices. △ Less

Submitted 24 December, 2021; originally announced December 2021.

Challenges to magnetic do** of thin films of the Dirac semimetal Cd$_3$As$_2$

Authors: Run Xiao, Jacob T Held, Jeffrey Rable, Supriya Ghosh, Ke Wang, K. Andre Mkhoyan, Nitin Samarth

Abstract: Magnetic do** of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd3As2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top… ▽ More Magnetic do** of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd3As2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd3As2 thin films grown using both uniform do** and delta do**. This suggests that Mn acts as a surfactant during epitaxial growth of Cd3As2, resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared to pristine Cd3As2 films grown under similar conditions. This suggests that the surfactant effect might also serve to getter impurities. We observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd3As2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer. △ Less

Submitted 22 December, 2021; originally announced December 2021.

Journal ref: Phys. Rev. Materials 6, 024203 (2022)

High-Temperature Anomalous Metal States in Iron-Based Interface Superconductors

Authors: Yanan Li, Haiwen Liu, Haoran Ji, Chengcheng Ji, Shichao Qi, Xiaotong Jiao, Wenfeng Dong, Yi Sun, Wenhao Zhang, Zihan Cui, Minghu Pan, Nitin Samarth, Lili Wang, X. C. Xie, Qi-Kun Xue, Yi Liu, Jian Wang

Abstract: The nature of the anomalous metal state has been a major puzzle in condensed matter physics for more than three decades. Here, we report systematic investigation and modulation of the anomalous metal states in high-temperature interface superconductor FeSe films on SrTiO3 substrate. Remarkably, under zero magnetic field, the anomalous metal state persists up to 20 K in pristine FeSe films, an exce… ▽ More The nature of the anomalous metal state has been a major puzzle in condensed matter physics for more than three decades. Here, we report systematic investigation and modulation of the anomalous metal states in high-temperature interface superconductor FeSe films on SrTiO3 substrate. Remarkably, under zero magnetic field, the anomalous metal state persists up to 20 K in pristine FeSe films, an exceptionally high temperature standing out from previous observations. In stark contrast, for the FeSe films with nano-hole arrays, the characteristic temperature of the anomalous metal state is considerably reduced. We demonstrate that the observed anomalous metal states originate from the quantum tunneling of vortices adjusted by the Ohmic dissipation. Our work offers a perspective for understanding the origin and modulation of the anomalous metal states in two-dimensional bosonic systems. △ Less

Submitted 4 June, 2024; v1 submitted 30 November, 2021; originally announced November 2021.

Journal ref: Physical Review Letters 132, 226003 (2024)

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Authors: Yongxi Ou, Wilson Yanez, Run Xiao, Max Stanley, Supriya Ghosh, Boyang Zheng, Wei Jiang, Yu-Sheng Huang, Timothy Pillsbury, Anthony Richardella, Chaoxing Liu, Tony Low, Vincent H. Crespi, K. Andre Mkhoyan, Nitin Samarth

Abstract: The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fu… ▽ More The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device. △ Less

Submitted 16 November, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Comments: Includes new data (ST-FMR) and calculations (spin Hall conductivity)

Journal ref: Nature Communications 13, 2972 (2022)

Field-tunable interactions and frustration in underlayer-mediated artificial spin ice

Authors: Susan Kem**er, Yu-Sheng Huang, Paul Lammert, Michael Vogel, Axel Hoffmann, Vincent H. Crespi, Peter Schiffer, Nitin Samarth

Abstract: Artificial spin ice systems have opened experimental windows into a range of model magnetic systems through the control of interactions among nanomagnet moments. This control has previously been enabled by altering the nanomagnet size and the geometry of their placement. Here we demonstrate that the interactions in artificial spin ice can be further controlled by including a soft ferromagnetic und… ▽ More Artificial spin ice systems have opened experimental windows into a range of model magnetic systems through the control of interactions among nanomagnet moments. This control has previously been enabled by altering the nanomagnet size and the geometry of their placement. Here we demonstrate that the interactions in artificial spin ice can be further controlled by including a soft ferromagnetic underlayer below the moments. Such a substrate also breaks the symmetry in the array when magnetized, introducing a directional component to the correlations. Using spatially resolved magneto-optical Kerr effect microscopy to image the demagnetized ground states, we show that the correlation of the demagnetized states depends on the direction of underlayer magnetization. Further, the relative interaction strength of nearest and next-nearest neighbors varies significantly with the array geometry. We exploit this feature to induce frustration in an inherently unfrustrated square lattice geometry, demonstrating new possibilities for effective geometries in two dimensional nanomagnetic systems. △ Less

Submitted 31 March, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Lett. 127, 117203 (2021)

Map** the phase diagram of the quantum anomalous Hall and topological Hall effects in a dual-gated magnetic topological insulator heterostructure

Authors: Run Xiao, Di Xiao, Jue Jiang, Jae-Ho Shin, Fei Wang, Yi-Fan Zhao, Ruo-Xi Zhang, Anthony Richardella, Ke Wang, Morteza Kayyalha, Moses H. W. Chan, Chao-Xing Liu, Cui-Zu Chang, Nitin Samarth

Abstract: We use magnetotransport in dual-gated magnetic topological insulator heterostructures to map out a phase diagram of the topological Hall and quantum anomalous Hall effects as a function of the chemical potential (primarily determined by the back gate voltage) and the asymmetric potential (primarily determined by the top gate voltage). A theoretical model that includes both surface states and valen… ▽ More We use magnetotransport in dual-gated magnetic topological insulator heterostructures to map out a phase diagram of the topological Hall and quantum anomalous Hall effects as a function of the chemical potential (primarily determined by the back gate voltage) and the asymmetric potential (primarily determined by the top gate voltage). A theoretical model that includes both surface states and valence band quantum well states allows the evaluation of the variation of the Dzyaloshinskii-Moriya interaction and carrier density with gate voltages. The qualitative agreement between experiment and theory provides strong evidence for the existence of a topological Hall effect in the system studied, opening up a new route for understanding and manipulating chiral magnetic spin textures in real space. △ Less

Submitted 11 March, 2021; v1 submitted 9 March, 2021; originally announced March 2021.

Comments: Minor corrections to original submission

Journal ref: Phys. Rev. Research 3, 032004 (2021)

Spin and charge interconversion in Dirac semimetal thin films

Authors: Wilson Yanez, Yongxi Ou, Run Xiao, Jahyun Koo, Jacob T. Held, Supriya Ghosh, Jeffrey Rable, Timothy Pillsbury, Enrique Gonzalez Delgado, Kezhou Yang, Juan Chamorro, Alexander J. Grutter, Patrick Quarterman, Anthony Richardella, Abhronil Sengupta, Tyrel McQueen, Julie A. Borchers, K. Andre Mkhoyan, Binghai Yan, Nitin Samarth

Abstract: We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pum**. Analysis of the symmetric and anti-symmetric compone… ▽ More We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pum**. Analysis of the symmetric and anti-symmetric components of the mixing voltage in spin torque ferromagnetic resonance and the frequency and power dependence of the spin pum** signal show that the behavior of these processes is consistent with previously reported spin-charge interconversion mechanisms in heavy metals, topological insulators, and Weyl semimetals. We find that the efficiency of spin-charge interconversion in Cd3As2/permalloy bilayers can be comparable to that in heavy metals. We discuss the underlying mechanisms by comparing our results with first principles calculations. △ Less

Submitted 28 February, 2021; originally announced March 2021.

Journal ref: Phys. Rev. Applied 16, 054031 (2021)

Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

Authors: Peng Li, **jun Ding, Steven S. -L. Zhang, James Kally, Timothy Pillsbury, Olle G. Heinonen, Gaurab Rimal, Chong Bi, August DeMann, Stuart B. Field, Weigang Wang, **ke Tang, J. S. Jiang, Axel Hoffmann, Nitin Samarth, Mingzhong Wu

Abstract: A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that ha… ▽ More A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Journal ref: Nano Letters 2020

Magnetization relaxation and search for the magnetic gap in bulk-insulating V-doped (Bi, Sb)$_2$Te$_3$

Authors: E. Golias, E. Weschke, T. Flanagan, E. Schierle, A. Richardella, E. D. L. Rienks, P. S. Mandal, A. Varykhalov, J. Sánchez-Barriga, F. Radu, N. Samarth, O. Rader

Abstract: V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we dir… ▽ More V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we directly probe the magnetism at the V site and in zerofield. Hysteresis curves of the XMCD signal show a strong dependence of the coercivity on the ram** velocity of the magnetic field. The XMCD signal decays on a time scale of minutes which we conclude contributes to the absence of a detectable magnetic gap at the Dirac point. △ Less

Submitted 14 October, 2020; originally announced October 2020.

Comments: 12 pages, 3 figures

Cap** layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface

Authors: Yanan Li, Ziqiao Wang, Run Xiao, Qi Li, Ke Wang, Anthony Richardella, Jian Wang, Nitin Samarth

Abstract: Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a cap** layer on superconductivity in thin films of FeS… ▽ More Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a cap** layer on superconductivity in thin films of FeSe grown on SrTiO3 using molecular beam epitaxy. We used in vacuo four-probe electrical resistance measurements and ex situ magneto-transport measurements to examine the effect of three cap** layers that provide distinctly different charge transfer into FeSe: compound FeTe, non-metallic Te, and metallic Zr. Our results show that FeTe provides an optimal cap that barely influences the inherent Tc found in pristine FeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completely suppresses superconductivity and leads to insulating behavior. Finally, we used ex situ magnetoresistance measurements in FeTe-capped FeSe films to extract the angular dependence of the in-plane upper critical magnetic field. Our observations reveal an almost isotropic in-plane upper critical field, providing insight into the symmetry and pairing mechanism of high temperature superconductivity in FeSe. △ Less

Submitted 11 October, 2020; originally announced October 2020.

Comments: Submitted to Physical Review Materials

Journal ref: Phys. Rev. Materials 5, 034802 (2021)

Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators

Authors: Shu-Wei Wang, Di Xiao, Ziwei Dou, Moda Cao, Yi-Fan Zhao, Nitin Samarth, Cui-Zu Chang, Malcolm R. Connolly, Charles G. Smith

Abstract: Do** a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible diss… ▽ More Do** a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible dissipative conducting channels in magnetic TI samples. By studying the temperature- and magnetic field-dependence of the magnetoresistance of a magnetic TI sandwich heterostructure device, we demonstrate that the predominant dissipation mechanism in thick QAH insulators can switch between non-chiral edge states and residual bulk states in different magnetic field regimes. The interactions between bulk states, chiral edge states, and non-chiral edge states are also investigated. Our study provides a way to distinguish between the dissipation arising from the residual bulk states and non-chiral edge states, which is crucial for achieving true dissipationless transport in QAH insulators and for providing deeper insights into QAH-related phenomena. △ Less

Submitted 18 September, 2020; v1 submitted 27 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Lett. 125, 126801 (2020)

Tuning Chern Number in Quantum Anomalous Hall Insulators

Authors: Yi-Fan Zhao, Ruoxi Zhang, Ruobing Mei, Ling-Jie Zhou, Hemian Yi, Ya-Qi Zhang, Jiabin Yu, Run Xiao, Ke Wang, Nitin Samarth, Moses H. W. Chan, Chao-Xing Liu, Cui-Zu Chang

Abstract: The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zer… ▽ More The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic do** concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for develo** multi-channel quantum computing and higher-capacity chiral circuit interconnects. △ Less

Submitted 21 September, 2020; v1 submitted 29 June, 2020; originally announced June 2020.

Comments: Accepted version (27 pages, 4 figures). Comments are welcome

Journal ref: Nature 588, 419-423(2020)

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

Authors: Tao Liu, James Kally, Timothy Pillsbury, Chuanpu Liu, Houchen Chang, **jun Ding, Yang Cheng, Maria Hilse, Roman Engel-Herbert, Anthony Richardella, Nitin Samarth, Mingzhong Wu

Abstract: This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the dam** in Y3Fe5O12. Such TSS-induced c… ▽ More This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the dam** in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films. △ Less

Submitted 6 June, 2020; originally announced June 2020.

Interface-Induced Sign Reversal of the Anomalous Hall Effect in Magnetic Topological Insulator Heterostructures

Authors: Fei Wang, Xuepeng Wang, Yi-Fan Zhao, Di Xiao, Ling-Jie Zhou, Wei Liu, Zhidong Zhang, Weiwei Zhao, Moses H. W. Chan, Nitin Samarth, Chaoxing Liu, Haijun Zhang, Cui-Zu Chang

Abstract: The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as a consequence of non-zero Berry curvature in momentum space. The realization of the quantum anomalous Hall effect provided conclusive evidence for the intrinsic mechanism of the AH effect in magnetic topological insulators (TI… ▽ More The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as a consequence of non-zero Berry curvature in momentum space. The realization of the quantum anomalous Hall effect provided conclusive evidence for the intrinsic mechanism of the AH effect in magnetic topological insulators (TIs). Here we fabricated magnetic TI/TI heterostructures and found both the magnitude and sign of the AH effect in the magnetic TI layer can be altered by tuning the TI thickness and/or the electric gate voltage. The sign change of the AH effect with increasing TI thickness is attributed to the charge transfer across the TI and magnetic TI layers, consistent with first-principles calculations. By fabricating the magnetic TI/TI/magnetic TI sandwich heterostructures with different dopants, we created an artificial topological Hall (TH) effect-like feature in Hall traces. This artificial TH effect is induced by the superposition of two AH effects with opposite signs instead of the formation of chiral spin textures in the samples. Our study provides a new route to engineer the Berry curvature in magnetic topological materials that may lead to potential technological applications. △ Less

Submitted 3 December, 2020; v1 submitted 26 April, 2020; originally announced April 2020.

Comments: 28 pages, 5 figures. Accepted version

Journal ref: Nature Commun. 12,79 (2021)

Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4

Authors: Seng Huat Lee, David Graf, Yanglin Zhu, Hemian Yi, Samuel Ciocys, Eun Sang Choi, Rabindra Basnet, Arash Fereidouni, Aaron Wegner, Yi-Fan Zhao, Lu** Min, Katrina Verlinde, **gyang He, Ronald Redwing, V. Gopalan, Hugh O. H. Churchill, Alessandra Lanzara, Nitin Samarth, Cui-Zu Chang, ** Hu, Z. Q. Mao

Abstract: The discovery of Weyl semimetals (WSMs) has fueled tremendous interest in condensed matter physics. WSMs require breaking of either inversion symmetry (IS) or time-reversal symmetry (TRS); they can be categorized into type-I and type-II WSMs, characterized by un-tilted and strongly tilted Weyl cones respectively. Type-I WSMs with breaking of IS or TRS and type-II WSMs with IS breaking have been re… ▽ More The discovery of Weyl semimetals (WSMs) has fueled tremendous interest in condensed matter physics. WSMs require breaking of either inversion symmetry (IS) or time-reversal symmetry (TRS); they can be categorized into type-I and type-II WSMs, characterized by un-tilted and strongly tilted Weyl cones respectively. Type-I WSMs with breaking of IS or TRS and type-II WSMs with IS breaking have been realized experimentally, but TRS-breaking type-II WSM still remains elusive. In this article, we report an ideal TRS-breaking type-II WSM with only one pair of Weyl nodes observed in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4 under magnetic fields. This state is manifested by a large intrinsic anomalous Hall effect, a non-trivial $\mathrm{π}$ Berry phase of the cyclotron orbit and a large positive magnetoresistance in the ferromagnetic phase at an optimal sample composition. Our results establish a promising platform for exploring the physics underlying the long-sought, ideal TRS breaking type-II WSM. △ Less

Submitted 31 August, 2020; v1 submitted 25 February, 2020; originally announced February 2020.

Comments: 28 Pages, 5 Figures

Journal ref: Phys. Rev. X 11, 031032 (2021)

Scaling Behavior of the Quantum Phase Transition from a Quantum Anomalous Hall Insulator to an Axion Insulator

Authors: Xinyu Wu, Di Xiao, Chui-Zhen Chen, Jian Sun, Ling Zhang, Moses H. W. Chan, Nitin Samarth, X. C. Xie, Xi Lin, Cui-Zu Chang

Abstract: The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the… ▽ More The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase transition. Similar to the quantum Hall plateau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalker-Coddington network model. We extract a critical exponent k~ 0.38 in agreement with recent high-precision numerical results on the correlation length exponent of the Chalker-Coddington model at v ~ 2.6, rather than the generally-accepted value of 2.33. △ Less

Submitted 29 August, 2020; v1 submitted 10 September, 2019; originally announced September 2019.

Comments: 24 pages, 4 figures, comments are welcome

Journal ref: Nature Commun. 11, 4532(2020)

Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$

Authors: J. Y. Liu, J. Yu, J. L. Ning, H. M. Yi, L. Miao, L. J. Min, Y. F. Zhao, W. Ning, K. A. Lopez, Y. L. Zhu, T. Pillsbury, Y. B. Zhang, Y. Wang, J. Hu, H. B. Cao, F. Balakirev, F. Weickert, M. Jaime, Y. Lai, Kun Yang, J. W. Sun, N. Alem, V. Gopalan, C. Z. Chang, N. Samarth , et al. (3 additional authors not shown)

Abstract: Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently co… ▽ More Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states. △ Less

Submitted 4 November, 2020; v1 submitted 14 July, 2019; originally announced July 2019.

Comments: Updated acknowledgement

Report number: NATURE COMMUNICATIONS 12:4062 (2021)

Journal ref: NATURE COMMUNICATIONS 12:4062 (2021)

Fermi Level Dependent Spin Pum** from a Magnetic Insulator into a Topological Insulator

Authors: Hailong Wang, James Kally, Cuneyt Sahin, Tao Liu, Wilson Yanez, Eric J. Kamp, Anthony Richardella, Mingzhong Wu, Michael E. Flatte, Nitin Samarth

Abstract: Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contr… ▽ More Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contribute significantly? By studying the Fermi level dependence of spin pum** in topological insulator/ferrimagnetic insulator bilayers, we show that the spin Hall conductivity is constant when the Fermi level is tuned across the bulk band gap, consistent with a full bulk band calculation. The results suggest a new perspective, wherein "bulk-surface correspondence" allows spin-charge conversion to be simultaneously viewed either as coming from the full bulk band, or from spin-momentum locking of the surface state. △ Less

Submitted 26 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Research 1, 012014 (2019)

Low temperature saturation of phase coherence length in topological insulators

Authors: Saurav Islam, Semonti Bhattacharyya, Hariharan Nhalil, Mitali Banerjee, Anthony Richardella, Abhinav Kandala, Diptiman Sen, Nitin Samarth, Suja Elizabeth, Arindam Ghosh

Abstract: Implementing topological insulators as elementary units in quantum technologies requires a comprehensive understanding of the dephasing mechanisms governing the surface carriers in these materials, which impose a practical limit to the applicability of these materials in such technologies requiring phase coherent transport. To investigate this, we have performed magneto-resistance (MR) and conduct… ▽ More Implementing topological insulators as elementary units in quantum technologies requires a comprehensive understanding of the dephasing mechanisms governing the surface carriers in these materials, which impose a practical limit to the applicability of these materials in such technologies requiring phase coherent transport. To investigate this, we have performed magneto-resistance (MR) and conductance fluctuations\ (CF) measurements in both exfoliated and molecular beam epitaxy grown samples. The phase breaking length ($l_φ$) obtained from MR shows a saturation below sample dependent characteristic temperatures, consistent with that obtained from CF measurements. We have systematically eliminated several factors that may lead to such behavior of $l_φ$ in the context of TIs, such as finite size effect, thermalization, spin-orbit coupling length, spin-flip scattering, and surface-bulk coupling. Our work indicates the need to identify an alternative source of dephasing that dominates at low $T$ in topological insulators, causing saturation in the phase breaking length and time. △ Less

Submitted 17 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 99, 245407 (2019)

Imaging the stochastic microstructure and dynamic development of correlations in perpendicular artificial spin ice

Authors: Susan Kem**er, Robert D. Fraleigh, Paul Lammert, Sheng Zhang, Vincent H. Crespi, Peter Schiffer, Nitin Samarth

Abstract: We use spatially resolved magneto-optical Kerr microscopy to track the complete microstates of arrays of perpendicular anisotropy nanomagnets during magnetization hysteresis cycles. These measurements allow us to disentangle the intertwined effects of nearest neighbor interaction, disorder, and stochasticity on magnetization switching. We find that the nearest neighbor correlations depend on both… ▽ More We use spatially resolved magneto-optical Kerr microscopy to track the complete microstates of arrays of perpendicular anisotropy nanomagnets during magnetization hysteresis cycles. These measurements allow us to disentangle the intertwined effects of nearest neighbor interaction, disorder, and stochasticity on magnetization switching. We find that the nearest neighbor correlations depend on both interaction strength and disorder. We also find that although the global characteristics of the hysteretic switching are repeatable, the exact microstate sampled is stochastic with the behavior of individual islands varying between nonminally identical runs. △ Less

Submitted 15 April, 2019; v1 submitted 14 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. Research 2, 012001 (2020)

Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures

Authors: Morteza Kayyalha, Di Xiao, Ruoxi Zhang, Jaeho Shin, Jue Jiang, Fei Wang, Yi-Fan Zhao, Ling Zhang, Kajetan M. Fijalkowski, Pankaj Mandal, Martin Winnerlein, Charles Gould, Qi Li, Laurens W. Molenkamp, Moses H. W. Chan, Nitin Samarth, Cui-Zu Chang

Abstract: A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions… ▽ More A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions in a millimeter-size QAH-Nb hybrid structure. However, there are concerns about this interpretation because non-Majorana mechanisms can also generate similar signatures, especially in a disordered QAH system. Here, we fabricated QAH-Nb hybrid structures and studied the QAH-Nb contact transparency and its effect on the corresponding two-terminal conductance. When the QAH film is tuned to the metallic regime by electric gating, we observed a sharp zero-bias enhancement in the differential conductance, up to 80% at zero magnetic field. This large enhancement suggests high probability of Andreev reflection and transparent interface between the magnetic topological insulator (TI) and Nb layers. When the magnetic TI film is in the QAH state with well-aligned magnetization, we found that the two-terminal conductance is always half-quantized. Our experiment provides a comprehensive understanding of the superconducting proximity effect observed in QAH-superconductor hybrid structures and shows that the half-quantized conductance plateau is unlikely to be induced by chiral Majorana fermions. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Comments: 17 pages, 4 figures. Comments are welcome. Supplementary materials will be provided upon request

Journal ref: Science 367, 64-67(2020)

Concurrence of Quantum Anomalous Hall and Topological Hall Effects in Magnetic Topological Insulator Sandwich Heterostructures

Authors: Jue Jiang, Di Xiao, Fei Wang, Jae-Ho Shin, Domenico Andreoli, Jianxiao Zhang, Run Xiao, Yi-Fan Zhao, Morteza Kayyalha, Ling Zhang, Ke Wang, Jiadong Zang, Chaoxing Liu, Nitin Samarth, Moses H. W. Chan, Cui-Zu Chang

Abstract: The quantum anomalous Hall (QAH) effect is a quintessential consequence of non-zero Berry curvature in momentum-space. The QAH insulator harbors dissipation-free chiral edge states in the absence of an external magnetic field. On the other hand, the topological Hall (TH) effect, a transport hallmark of the chiral spin textures, is a consequence of real-space Berry curvature. While both the QAH and… ▽ More The quantum anomalous Hall (QAH) effect is a quintessential consequence of non-zero Berry curvature in momentum-space. The QAH insulator harbors dissipation-free chiral edge states in the absence of an external magnetic field. On the other hand, the topological Hall (TH) effect, a transport hallmark of the chiral spin textures, is a consequence of real-space Berry curvature. While both the QAH and TH effects have been reported separately, their coexistence, a manifestation of entangled chiral edge states and chiral spin textures, has not been reported. Here, by inserting a TI layer between two magnetic TI layers to form a sandwich heterostructure, we realized a concurrence of the TH effect and the QAH effect through electric field gating. The TH effect is probed by bulk carriers, while the QAH effect is characterized by chiral edge states. The appearance of TH effect in the QAH insulating regime is the consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii-Moriya interaction and occur during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures potentially provides a unique platform for proof-of-concept dissipationless spin-textured spintronic applications. △ Less

Submitted 31 December, 2019; v1 submitted 22 January, 2019; originally announced January 2019.

Comments: 22 pages, 4 figures, the accepted version for Nature Materials

Journal ref: Nature Mater.19,732-737(2020)

Observation of Interfacial Antiferromagnetic Coupling between Magnetic Topological Insulator and Antiferromagnetic Insulator

Authors: Fei Wang, Di Xiao, Wei Yuan, Jue Jiang, Yi-Fan Zhao, Ling Zhang, Yunyan Yao, Baojuan Dong, Wei Liu, Zhidong Zhang, Chaoxing Liu, **g Shi, Wei Han, Moses H. W. Chan, Nitin Samarth, Cui-Zu Chang

Abstract: Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in harnessing these quantum phenomena towards technological applications. Here we fabricated a thin magnetic TI film on an antiferromagnetic (AFM) insulator Cr2O3 la… ▽ More Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in harnessing these quantum phenomena towards technological applications. Here we fabricated a thin magnetic TI film on an antiferromagnetic (AFM) insulator Cr2O3 layer and found that the magnetic moments of the magnetic TI layer and the surface spins of the Cr2O3 layers favor interfacial AFM coupling. Field cooling studies show a crossover from negative to positive exchange bias clarifying the competition between the interfacial AFM coupling energy and the Zeeman energy in the AFM insulator layer. The interfacial exchange coupling also enhances the Curie temperature of the magnetic TI layer. The unique interfacial AFM alignment in magnetic TI on AFM insulator heterostructures opens a new route toward manipulating the interplay between topological states and magnetic orders in spin-engineered heterostructures, facilitating the exploration of proof-of-concept TI-based spintronic and electronic devices with multi-functionality and low power consumption. △ Less

Submitted 9 January, 2019; originally announced January 2019.

Comments: 18 pages, 4 figures. Comments are welcome

Journal ref: Nano Lett. 19, 2945-2952 (2019)

Anomalous Quantum Oscillations of Interacting Electron-hole Gases in Inverted Type-II InAs/GaSb Quantum Wells

Authors: Di Xiao, Lun-Hui Hu, Chao-Xing Liu, Nitin Samarth

Abstract: We report magneto-transport studies of InAs/GaSb bilayer quantum wells in a regime where the interlayer tunneling between the electron and hole gases is suppressed. When the chemical potential is tuned close to the charge neutrality point, we observe anomalous quantum oscillations that are inversely periodic in magnetic field and that have an extremely high frequency despite the highly insulating… ▽ More We report magneto-transport studies of InAs/GaSb bilayer quantum wells in a regime where the interlayer tunneling between the electron and hole gases is suppressed. When the chemical potential is tuned close to the charge neutrality point, we observe anomalous quantum oscillations that are inversely periodic in magnetic field and that have an extremely high frequency despite the highly insulating regime where they are observed. The seemingly contradictory coexistence of a high sheet resistance and high frequency quantum oscillations in the charge neutrality regime cannot be understood within the single-particle picture. We propose an interpretation that attributes our experimental observation to the Coulomb drag between the electron and hole gases, thus providing strong evidence of the significance of Coulomb interaction in this topological insulator. △ Less

Submitted 12 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Lett. 122, 186802 (2019)

Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$

Authors: Seng Huat Lee, Yanglin Zhu, Yu Wang, Leixin Miao, Timothy Pillsbury, Susan Kem**er, David Graf, Nasim Alem, Cui-Zu Chang, Nitin Samarth, Zhiqiang Mao

Abstract: $\mathrm{MnBi_2Te_4}… ▽ More $\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We performed comprehensive studies on the structure, nontrivial surface state and magnetotransport properties of this material. Our results reveal an intrinsic anomalous Hall effect arising from a non-collinear spin structure for the magnetic field parallel to the $c$-axis. We also observed remarkable negative magnetoresistance under arbitrary field orientation below and above the Neel temperature (T$_N$), providing clear evidence for strong spin fluctuation-driven spin scattering in both the AFM and paramagnetic states. Further, we found that the nontrivial surface state opens a large gap (~85 meV) even at temperatures far above T$_N$ = 25K. These findings demonstrate that the bulk band structure of $\mathrm{MnBi_2Te_4}$ is strongly coupled to the magnetic structure and that a net Berry curvature in momentum space can be created in a canted AFM state. In addition, our results imply that the gap opening in the surface states is intrinsic, likely caused by the strong spin fluctuations near the surface layers. △ Less

Submitted 2 December, 2018; originally announced December 2018.

Comments: 27 Pages, 8 figures

Journal ref: Phys. Rev. Research 1, 012011 (2019)

Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators

Authors: Saurav Islam, Semonti Bhattacharyya, Abhinav Kandala, Anthony Richardella, Nitin Samarth, Arindam Ghosh

Abstract: We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within the bulk valence band, the temperature dependence reveals a clear signature of generation-recombination noise in the defect states in the bulk band gap. However,… ▽ More We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within the bulk valence band, the temperature dependence reveals a clear signature of generation-recombination noise in the defect states in the bulk band gap. However, when the Fermi energy is tuned to the bulk band gap, the gate voltage dependence of noise shows that the resistance fluctuations in surface transport are caused by correlated mobility-number density fluctuations due to the activated defect states present in the bulk of the topological insulator crystal with a density of D$_{it}=3.2\times10^{17}$ cm$^2$eV$^{-1}$. In the presence of a magnetic field, noise in these materials follows a parabolic dependence, which is qualitatively similar to mobility and charge-density fluctuation noise in non-degenerately doped trivial semiconductors. Our studies reveal that even in thin films of (Bi,Sb)$_2$Te$_3$ with thickness as low as 10 nm, the intrinsic bulk defects are the dominant source of noise. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 15 pages, 4 figures

Journal ref: Appl. Phys. Lett. 111, 062107 (2017)

Large-scale defects hidden inside a topological insulator grown onto a 2D substrate

Authors: Danielle Reifsnyder Hickey, Ryan J. Wu, Joon Sue Lee, Javad G. Azadani, Roberto Grassi, Mahendra DC, Jian-** Wang, Tony Low, Nitin Samarth, K. Andre Mkhoyan

Abstract: Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. Howev… ▽ More Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. However, a major obstacle to realizing the promise of TIs is the thin-film materials' quality, which lags behind that of epitaxially grown semiconductors. In contrast to the latter systems, the Bi-chalcogenides form by van der Waals epitaxy, which allows them to successfully grow onto substrates with various degrees of lattice mismatch. This flexibility enables the integration of TIs into heterostructures with emerging materials, including two-dimensional materials. However, understanding and controlling local features and defects within the TI films is critical to achieving breakthrough device performance. Here, we report observations and modeling of large-scale structural defects in (Bi,Sb)$_2$Te$_3$ films grown onto hexagonal BN, highlighting unexpected symmetry-breaking rotations within the films and the coexistence of a second phase along grain boundaries. Using first-principles calculations, we show that these defects could have consequential impacts on the devices that rely on these TI films, and therefore they cannot be ignored. △ Less

Submitted 10 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. Mater. 4, 011201(R) (2020)

Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Authors: Yang Lv, James Kally, Tao Liu, Protyush Sahu, Mingzhong Wu, Nitin Samarth, Jian-** Wang

Abstract: Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator d… ▽ More Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device. △ Less

Submitted 23 June, 2018; originally announced June 2018.

Report number: 9, 011406

Journal ref: Applied Physics Reviews (2022)

Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures

Authors: Di Xiao, Jue Jiang, Jae-Ho Shin, Wenbo Wang, Fei Wang, Yi-Fan Zhao, Chaoxing Liu, Weida Wu, Moses H. W. Chan, Nitin Samarth, Cui-Zu Chang

Abstract: The 'magnetoelectric effect' arises from the coupling between magnetic and electric properties in materials. The Z2 invariant of topological insulators (TIs) leads to a quantized version of this phenomenon, known as the topological magnetoelectric (TME) effect. This effect can be realized in a new topological phase called an 'axion insulator' whose surface states are all gapped but the interior st… ▽ More The 'magnetoelectric effect' arises from the coupling between magnetic and electric properties in materials. The Z2 invariant of topological insulators (TIs) leads to a quantized version of this phenomenon, known as the topological magnetoelectric (TME) effect. This effect can be realized in a new topological phase called an 'axion insulator' whose surface states are all gapped but the interior still obeys time reversal symmetry. We demonstrate such a phase using electrical transport measurements in a quantum anomalous Hall (QAH) sandwich heterostructure, in which two compositionally different magnetic TI layers are separated by an undoped TI layer. Magnetic force microscopy images of the same sample reveal sequential magnetization reversals of the top and bottom layers at different coercive fields, a consequence of the weak interlayer exchange coupling due to the spacer. When the magnetization is antiparallel, both the Hall resistance and Hall conductance show zero plateaus, accompanied by a large longitudinal resistance and vanishing longitudinal conductance, indicating the realization of an axion insulator state. Our findings thus show evidences for a phase of matter distinct from the established QAH state and provide a promising platform for the realization of the TME effect. △ Less

Submitted 2 January, 2018; v1 submitted 1 October, 2017; originally announced October 2017.

Comments: 18-page manuscript + 24-page supplementary materials. Accepted by PRL

Journal ref: Phys. Rev. Lett. 120, 056801 (2018)