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Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization
Authors:
Chirag Garg,
Panagiotis Ch. Filippou,
Ikhtiar,
Yari Ferrante,
See-Hun Yang,
Brian Hughes,
Charles T. Rettner,
Timothy Phung,
Sergey Faleev,
Teya Topuria,
Mahesh G. Samant,
Jaewoo Jeong,
Stuart S. P. Parkin
Abstract:
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of the memory storage layer. Here we show that fast and highly reliable switching is possible using a very low magnetization ferrimagnetic Heusler alloy, Mn3Ge. Mo…
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Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of the memory storage layer. Here we show that fast and highly reliable switching is possible using a very low magnetization ferrimagnetic Heusler alloy, Mn3Ge. Moreover, the tunneling magnetoresistance is the highest yet achieved for a ferrimagnetic material at ambient temperature. Furthermore, the devices were prepared on technologically relevant amorphous substrates using a novel combination of a nitride seed layer and a chemical templating layer. These results show a clear path to the lowering of switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high performance magnetic random access memories beyond those nodes possible with ferromagnetic devices.
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Submitted 12 March, 2024;
originally announced March 2024.
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Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators
Authors:
Stephanie M. Bohaichuk,
Suhas Kumar,
Miguel Muñoz Rojo,
R. Stanley Williams,
Mahnaz Islam,
Gregory Pitner,
Jaewoo Jeong,
Mahesh G. Samant,
Stuart S. P. Parkin,
Eric Pop
Abstract:
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm ef…
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Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm effective sizes, achieved using a nanogap cut in a metallic carbon nanotube (CNT) electrode, does not guarantee faster spiking. However, an additional heat source such as Joule heating from the CNT, in combination with small size and heat capacity (defined by the narrow volume of VO2 whose insulator-metal transition is triggered by the CNT), can increase the spiking frequency by ~1000x due to an electro-thermal bifurcation in the nonlinear dynamics. These results demonstrate that nonlinear dynamical switches operate in a complex phase space which can be controlled by careful electro-thermal design, offering new tuning parameters for designing future biomimetic electronics.
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Submitted 14 December, 2020;
originally announced December 2020.
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Localized Triggering of the Insulator-Metal Transition in VO2 using a Single Carbon Nanotube
Authors:
Stephanie M. Bohaichuk,
Miguel Muñoz Rojo,
Gregory Pitner,
Connor J. McClellan,
Feifei Lian,
Jason Li,
Jaewoo Jeong,
Mahesh G. Samant,
Stuart S. P. Parkin,
H. -S. Philip Wong,
Eric Pop
Abstract:
Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single…
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Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ~85 $μW$ at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin Probe Microscopy (KPM) and Scanning Thermal Microscopy (SThM). Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT play a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters, and highlight the significance of thermal engineering to improve device behaviour.
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Submitted 5 July, 2019;
originally announced July 2019.
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Nonlinear magnetization dynamics driven by strong terahertz fields
Authors:
Matthias Hudl,
Massimiliano d'Aquino,
Matteo Pancaldi,
See-Hun Yang,
Mahesh G. Samant,
Stuart S. P. Parkin,
Hermann A. Dürr,
Claudio Serpico,
Matthias C. Hoffmann,
Stefano Bonetti
Abstract:
We present a comprehensive experimental and numerical study of magnetization dynamics triggered in a thin metallic film by single-cycle terahertz pulses of $\sim20$ MV/m electric field amplitude and $\sim1$ ps duration. The experimental dynamics is probed using the femtosecond magneto-optical Kerr effect (MOKE), and it is reproduced numerically using macrospin simulations. The magnetization dynami…
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We present a comprehensive experimental and numerical study of magnetization dynamics triggered in a thin metallic film by single-cycle terahertz pulses of $\sim20$ MV/m electric field amplitude and $\sim1$ ps duration. The experimental dynamics is probed using the femtosecond magneto-optical Kerr effect (MOKE), and it is reproduced numerically using macrospin simulations. The magnetization dynamics can be decomposed in three distinct processes: a coherent precession of the magnetization around the terahertz magnetic field, an ultrafast demagnetization that suddenly changes the anisotropy of the film, and a uniform precession around the equilibrium effective field that is relaxed on the nanosecond time scale, consistent with a Gilbert dam** process. Macrospin simulations quantitatively reproduce the observed dynamics, and allow us to predict that novel nonlinear magnetization dynamics regimes can be attained with existing table-top terahertz sources.
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Submitted 25 September, 2019; v1 submitted 20 March, 2019;
originally announced March 2019.
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Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device
Authors:
Stephanie M. Bohaichuk,
Suhas Kumar,
Greg Pitner,
Connor J. McClellan,
Jaewoo Jeong,
Mahesh G. Samant,
H-. S. Philip Wong,
Stuart S. P. Parkin,
R. Stanley Williams,
Eric Pop
Abstract:
The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths fr…
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The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths from a single device composed of a thin VO2 film with a metallic carbon nanotube as a nanoscale heater. Compared with VO2-only devices, adding the nanotube heater dramatically decreases the transient duration and pulse energy, and increases the spiking frequency, by up to three orders of magnitude. This is caused by heating and cooling of the VO2 across its insulator-metal transition being localized to a nanoscale conduction channel in an otherwise bulk medium. This result provides an important component of energy-efficient neuromorphic computing systems, and a lithography-free technique for power-scaling of electronic devices that operate via bulk mechanisms.
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Submitted 7 March, 2019;
originally announced March 2019.
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Measurement of collective excitations in VO$_2$ by resonant inelastic X-ray scattering
Authors:
Haowei He,
A. X. Gray,
P. Granitzka,
J. W. Jeong,
N. P. Aetukuri,
R. Kukreja,
Lin Miao,
Y. B. Huang,
P. Olalde-Velasco,
J. Pelliciari,
W. F. Schlotter,
E. Arenholz,
T. Schmitt,
M. G. Samant,
S. S. P. Parkin,
H. A. Dürr,
L. Andrew Wray
Abstract:
Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic X-ray scattering is used to measure the excitation spectrum of charge, spin, and lattice degrees of freedom at the vanadium L-edge under different polarization and t…
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Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic X-ray scattering is used to measure the excitation spectrum of charge, spin, and lattice degrees of freedom at the vanadium L-edge under different polarization and temperature conditions. These spectra reveal the evolution of energetics across the metal-insulator transition, including the low temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer.
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Submitted 3 March, 2016;
originally announced March 2016.
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Ultrafast THz Field Control of Electronic and Structural Interactions in Vanadium Dioxide
Authors:
A. X. Gray,
M. C. Hoffmann,
J. Jeong,
N. P. Aetukuri,
D. Zhu,
H. Y. Hwang,
N. C. Brandt,
H. Wen,
A. J. Sternbach,
S. Bonetti,
A. H. Reid,
R. Kukreja,
C. Graves,
T. Wang,
P. Granitzka,
Z. Chen,
D. J. Higley,
T. Chase,
E. Jal,
E. Abreu,
M. K. Liu,
T. -C. Weng,
D. Sokaras,
D. Nordlund,
M. Chollet
, et al. (12 additional authors not shown)
Abstract:
Vanadium dioxide, an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally-driven physics. Using ultrafast optical spectroscopy and x-ray scattering we show that these processes can be disentangled in the time domain. Specifically, following intense sub-picosecond electric-field excitation,…
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Vanadium dioxide, an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally-driven physics. Using ultrafast optical spectroscopy and x-ray scattering we show that these processes can be disentangled in the time domain. Specifically, following intense sub-picosecond electric-field excitation, a partial collapse of the insulating gap occurs within the first ps. Subsequently, this electronic reconfiguration initiates a change in lattice symmetry taking place on a slower timescale. We identify the kinetic energy increase of electrons tunneling in the strong electric field as the driving force, illustrating a novel method to control electronic interactions in correlated materials on an ultrafast timescale.
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Submitted 25 April, 2016; v1 submitted 27 January, 2016;
originally announced January 2016.
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Mesoscopic structural phase progression in photo-excited VO2 revealed by time-resolved x-ray diffraction microscopy
Authors:
Yi Zhu,
Zhonghou Cai,
Pice Chen,
Qingteng Zhang,
Matthew J. Highland,
Il Woong Jung,
Donald A. Walko,
Eric M. Dufresne,
Jaewoo Jeong,
Mahesh G. Samant,
Stuart S. P. Parkin,
John W. Freeland,
Paul G. Evans,
Haidan Wen
Abstract:
Dynamical phase separation during a solid-solid phase transition poses a challenge for understanding the fundamental processes in correlated materials. Critical information underlying a phase transition, such as localized phase competition, is difficult to reveal by measurements that are spatially averaged over many phase separated regions. The ability to simultaneously track the spatial and tempo…
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Dynamical phase separation during a solid-solid phase transition poses a challenge for understanding the fundamental processes in correlated materials. Critical information underlying a phase transition, such as localized phase competition, is difficult to reveal by measurements that are spatially averaged over many phase separated regions. The ability to simultaneously track the spatial and temporal evolution of such systems is essential to understanding mesoscopic processes during a phase transition. Using state-of-the-art time-resolved hard x-ray diffraction microscopy, we directly visualize the structural phase progression in a VO2 film upon photoexcitation. Following a homogenous in-plane optical excitation, the phase transformation is initiated at discrete sites and completed by the growth of one lattice structure into the other, instead of a simultaneous isotropic lattice symmetry change. The time-dependent x-ray diffraction spatial maps show that the in-plane phase progression in laser-superheated VO2 is via a displacive lattice transformation as a result of relaxation from an excited monoclinic phase into a rutile phase. The speed of the phase front progression is quantitatively measured, and is faster than the process driven by in-plane thermal diffusion but slower than the sound speed in VO2. The direct visualization of localized structural changes in the time domain opens a new avenue to study mesoscopic processes in driven systems.
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Submitted 10 February, 2016; v1 submitted 15 October, 2015;
originally announced October 2015.
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Generation of high-frequency strain waves during femtosecond demagnetization of Fe/MgO films
Authors:
T. Henighan,
M. Trigo,
S. Bonetti,
P. Granitzka,
D. Higley,
Z. Chen,
M. P. Jiang,
R. Kukreja,
A. Gray,
A. H. Reid,
E. Jal,
M. C. Hoffmann,
M. Kozina,
S. Song,
M. Chollet,
D. Zhu,
P. F. Xu,
J. Jeong,
K. Carva,
P. Maldonado,
P. M. Oppeneer,
M. G. Samant,
S. S. P. Parkin,
D. A. Reis,
H. A. Dürr
Abstract:
We use femtosecond time-resolved hard x-ray scattering to detect coherent acoustic phonons excited during ultrafast laser demagnetization of bcc Fe films. We determine the lattice strain propagating through the film through analysis of the oscillations in the x-ray scattering signal as a function of momentum transfer. The width of the strain wavefront is ~100 fs, similar to demagnetization timesca…
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We use femtosecond time-resolved hard x-ray scattering to detect coherent acoustic phonons excited during ultrafast laser demagnetization of bcc Fe films. We determine the lattice strain propagating through the film through analysis of the oscillations in the x-ray scattering signal as a function of momentum transfer. The width of the strain wavefront is ~100 fs, similar to demagnetization timescales. First-principles calculations show that the high-frequency Fourier components of the strain, which give rise to the sharp wavefront, could in part originate from non-thermal dynamics of the lattice not considered in the two-temperature model.
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Submitted 10 September, 2015;
originally announced September 2015.
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Correlation-driven insulator-metal transition in near-ideal vanadium dioxide films
Authors:
A. X. Gray,
J. Jeong,
N. P. Aetukuri,
P. Granitzka,
Z. Chen,
R. Kukreja,
D. Higley,
T. Chase,
A. H. Reid,
H. Ohldag,
M. A. Marcus,
A. Scholl,
A. T. Young,
A. Doran,
C. A. Jenkins,
P. Shafer,
E. Arenholz,
M. G. Samant,
S. S. P. Parkin,
H. A. Dürr
Abstract:
We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline V…
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We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely-electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (+/- 0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically-promising material.
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Submitted 26 March, 2015;
originally announced March 2015.
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X-ray magnetic circular dichroism study of epitaxial magnetite ultrathin film on MgO (100)
Authors:
W. Q. Liu,
M. Y. Song,
N. J. Maltby,
S. P. Li,
J. G. Lin,
M. G. Samant,
S. S. P. Parkin,
P. Bencok,
Paul Steadman,
Alexey Dobrynin,
Y. B. Xu,
R. Zhang
Abstract:
The spin and orbital magnetic moments of the Fe3O4 epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism (XMCD). The ultrathin film retains a rather large total magnetic moment, i.e. (2.7+-0.15) uB/f.u., which is ~ 70% of that for the bulk-like Fe3O4. A significant unquenched orbital moment up to (0.54+…
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The spin and orbital magnetic moments of the Fe3O4 epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism (XMCD). The ultrathin film retains a rather large total magnetic moment, i.e. (2.7+-0.15) uB/f.u., which is ~ 70% of that for the bulk-like Fe3O4. A significant unquenched orbital moment up to (0.54+-0.05) uB/f.u. was observed, which could come from the symmetry breaking at the Fe3O4/MgO interface. Such sizable orbital moment will add capacities to the Fe3O4-based spintronics devices in the magnetization reversal by the electric field.
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Submitted 11 September, 2015; v1 submitted 8 January, 2015;
originally announced January 2015.
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Extreme Ultraviolet Transient Grating Spectroscopy of Vanadium Dioxide
Authors:
Emily Sistrunk,
Jakob Grilj,
Jaewoo Jeong,
Mahesh G. Samant,
Alexander X. Gray,
Hermann A. Dürr,
Stuart S. P. Parkin,
Markus Gühr
Abstract:
Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulat…
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Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO2 film with EUV diffraction from the optically excited sample. The VO2 exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.
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Submitted 23 May, 2014;
originally announced May 2014.
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Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100)
Authors:
Rong Shan,
Siham Ouardi,
Gerhard H. Fecher,
Li Gao,
Andrew Kellock,
Kevin P. Roche,
Mahesh G. Samant,
Carlos E. Vidal Barbosa,
Eiji Ikenaga,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
Thin films of the proposed topological insulator PdLuBi - a Heusler compound with the C1b structure - were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets. Epitaxial growth of high-quality PdLuBi films was confirmed by X-ray spectrometry and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, alth…
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Thin films of the proposed topological insulator PdLuBi - a Heusler compound with the C1b structure - were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets. Epitaxial growth of high-quality PdLuBi films was confirmed by X-ray spectrometry and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, although the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the PdLuBi films, observed by hard X-ray photoelectron spectroscopy, correspond perfectly to the ab-initio-calculated density of states.
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Submitted 25 September, 2012;
originally announced September 2012.