Showing 1–5 of 5 results for author: Salman, J

Giant Modulation of Refractive Index from Picoscale Atomic Displacements

Authors: Boyang Zhao, Guodong Ren, Hongyan Mei, Vincent C. Wu, Shantanu Singh, Gwan-Yeong Jung, Huandong Chen, Raynald Giovine, Shanyuan Niu, Arashdeep S. Thind, Jad Salman, Nick S. Settineri, Bryan C. Chakoumakos, Michael E. Manley, Raphael P. Hermann, Andrew R. Lupini, Miaofang Chi, Jordan A. Hachtel, Arkadiy Simonov, Simon J. Teat, Raphaële J. Clément, Mikhail A. Kats, J. Ravichandran, Rohan Mishra

Abstract: Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtaining novel optical and optoelectronic properties from structural disorder remains an open question. Here, we show unambiguous evidence of disorder in the form of anisotropic, picoscale atomic displacements modulating the… ▽ More Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtaining novel optical and optoelectronic properties from structural disorder remains an open question. Here, we show unambiguous evidence of disorder in the form of anisotropic, picoscale atomic displacements modulating the refractive index tensor and resulting in the giant optical anisotropy observed in BaTiS$_3$, a quasi-one-dimensional hexagonal chalcogenide. Single crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS$_6$ chains along the c-axis, and three-fold degenerate Ti displacements in the a-b plane. $^{47/49}$Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. We used scanning transmission electron microscopy to directly observe the globally disordered Ti a-b plane displacements and find them to be ordered locally over a few unit cells. First-principles calculations show that the Ti a-b plane displacements selectively reduce the refractive index along the ab-plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS$_3$, this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity. △ Less

Submitted 19 March, 2024; v1 submitted 6 October, 2023; originally announced October 2023.

Comments: 24 pages, 3 figures

Colossal optical anisotropy from atomic-scale modulations

Authors: Hongyan Mei, Guodong Ren, Boyang Zhao, Jad Salman, Gwan Yeong Jung, Huandong Chen, Shantanu Singh, Arashdeep S. Thind, John Cavin, Jordan A. Hachtel, Miaofang Chi, Shanyuan Niu, Graham Joe, Chenghao Wan, Nick Settineri, Simon J. Teat, Bryan C. Chakoumakos, Jayakanth Ravichandran, Rohan Mishra, Mikhail A. Kats

Abstract: In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface pol… ▽ More In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses. △ Less

Submitted 21 July, 2023; v1 submitted 28 February, 2023; originally announced March 2023.

Comments: Main text + supplementary

Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range

Authors: Alexander Koch, Hongyan Mei, Jura Rensberg, Martin Hafermann, Jad Salman, Chenghao Wan, Raymond Wambold, Daniel Blaschke, Heidemarie Schmidt, Jürgen Salfeld, Sebastian Geburt, Mikhail A. Kats, Carsten Ronning

Abstract: We demonstrate heavy and hyper do** of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved… ▽ More We demonstrate heavy and hyper do** of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved heavily doped ZnO:Ga with free-carrier concentrations of ~10^21 cm^(-3), resulting in a plasma wavelength of 1.02 um, which is substantially shorter than the telecommunication wavelength of 1.55 um. Thus, our approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 um, providing a promising plasmonic material for applications in this regime. △ Less

Submitted 31 October, 2022; originally announced October 2022.

Comments: Main text + supplementary

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

Authors: Hongyan Mei, Alexander Koch, Chenghao Wan, Jura Rensberg, Zhen Zhang, Jad Salman, Martin Hafermann, Maximilian Schaal, Yuzhe Xiao, Raymond Wambold, Shriram Ramanathan, Carsten Ronning, Mikhail A. Kats

Abstract: We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subs… ▽ More We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of do** or defect density are required. △ Less

Submitted 2 June, 2022; v1 submitted 3 February, 2022; originally announced February 2022.

Comments: Main text + supplementary. Updated manuscript with some more science

Temperature-independent thermal radiation

Authors: Alireza Shahsafi, Patrick Roney, You Zhou, Zhen Zhang, Yuzhe Xiao, Chenghao Wan, Raymond Wambold, Jad Salman, Zhaoning Yu, Jiarui Li, Jerzy T. Sadowski, Riccardo Comin, Shriram Ramanathan, Mikhail A. Kats

Abstract: Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases monotonically with temperature in a one-to-one relationship that enables applications such as infrared imaging and non-contact thermometry. Here, we demonstrate ultrathin t… ▽ More Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases monotonically with temperature in a one-to-one relationship that enables applications such as infrared imaging and non-contact thermometry. Here, we demonstrate ultrathin thermal emitters that violate this one-to-one relationship via the use of samarium nickel oxide (SmNiO3), a strongly correlated quantum material that undergoes a fully reversible, temperature-driven solid-state phase transition. The smooth and hysteresis-free nature of this unique insulator-to-metal (IMT) phase transition allows us to engineer the temperature dependence of emissivity to precisely cancel out the intrinsic blackbody profile described by the Stefan-Boltzmann law, for both heating and cooling. Our design results in temperature-independent thermally emitted power within the long-wave atmospheric transparency window (wavelengths of 8 - 14 um), across a broad temperature range of ~30 °C, centered around ~120 °C. The ability to decouple temperature and thermal emission opens a new gateway for controlling the visibility of objects to infrared cameras and, more broadly, new opportunities for quantum materials in controlling heat transfer. △ Less

Submitted 19 September, 2019; v1 submitted 1 February, 2019; originally announced February 2019.

Comments: Main text and supplementary