Showing 1–13 of 13 results for author: Salev, P

Voltage control of spin resonance in phase change materials

Authors: Tian-Yue Chen, Haowen Ren, Nareg Ghazikhanian, Ralph El Hage, Dayne Y. Sasaki, Pavel Salev, Yayoi Takamura, Ivan K. Schuller, Andrew D. Kent

Abstract: Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in spin excitations are also expected. The transition metal oxide La0.7Sr0.3MnO3 (LSMO) is a ferromagnetic metal at low temperatures and a paramagnetic in… ▽ More Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in spin excitations are also expected. The transition metal oxide La0.7Sr0.3MnO3 (LSMO) is a ferromagnetic metal at low temperatures and a paramagnetic insulator above room temperature. When LSMO is in its metallic phase a critical electrical bias has been shown to lead to an MIT that results in the formation of a paramagnetic resistive barrier transverse to the applied electric field. Using spin-transfer ferromagnetic resonance spectroscopy, we show that even for electrical biases less than the critical value that triggers the MIT, there is magnetic phase separation with the spin-excitation resonances varying systematically with applied bias. Thus, applied voltages provide a means to alter spin resonance characteristics of interest for neuromorphic circuits. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Authors: Alexandre Pofelski, Sergio Valencia, Yoav Kalcheim, Pavel Salev, Alberto Rivera, Chubin Huang, Mohamad A. Mawass, Florian Kronast, Ivan K. Schuller, Yimei Zhu, Javier del Valle

Abstract: Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clam** can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-ori… ▽ More Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clam** can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Local strain inhomogeneities during the electrical triggering of a metal-insulator transition revealed by the x-ray microscopy

Authors: Pavel Salev, Elliot Kisiel, Dayne Sasaki, Brandon Gunn, Wei He, Mingzhen Feng, Junjie Li, Nobumichi Tamura, Ishwor Poudyal, Zahir Islam, Yayoi Takamura, Alex Frano, Ivan K. Schuller

Abstract: Electrical triggering of a metal-insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When the MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of… ▽ More Electrical triggering of a metal-insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When the MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of material. Using x-ray microdiffraction and dark-field x-ray microscopy, we show that electrothermal MIT triggering leads to the development of an inhomogeneous strain profile across the switching device, even when the material does not undergo a 1st order structural phase transition coinciding with the MIT. Diffraction measurements further reveal evidence of lattice distortions and twinning occurring within the MIT switching device, highlighting a qualitative distinction between the electrothermal process and equilibrium thermal lattice expansion in nonlinear electrical systems. Electrically induced strain development, lattice distortions, and twinning could have important contributions in the MIT triggering process and could drive the material into non-equilibrium states, providing an unconventional pathway to explore the phase space of strongly correlated electronic systems. △ Less

Submitted 10 October, 2023; originally announced October 2023.

High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices

Authors: Elliot Kisiel, Pavel Salev, Ishwor Poudyal, Fellipe Baptista, Fanny Rodolakis, Zhan Zhang, Oleg Shpyrko, Ivan K. Schuller, Zahir Islam, Alex Frano

Abstract: Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavio… ▽ More Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavior are often limited due to time-consuming rastering which makes impractical many experiments aimed at investigating large spatial areas or temporal dynamics associated with the electrical triggering of the phase transition. Utilizing Dark Field X-ray Microscopy (DFXM), a novel full-field x-ray imaging technique, we study this complex filament formation process in-operando in VO2 devices from a structural perspective. We show that prior to filament formation, there is a significant gain of the metallic rutile phase beneath the metal electrodes that define the device. We observed that the filament formation follows a preferential path determined by the nucleation sites within the device. These nucleation sites are predisposed to the phase transition and can persistently maintain the high-temperature rutile phase even after returning to room temperature, which can enable a novel training/learning mechanism. Filament formation also appears to follow a preferential path determined by a nucleation site within the device which is predisposed to the rutile transition even after returning to room temperature. Finally, we found that small isolated low-temperature phase clusters can be present inside the high-temperature filaments indicating that the filament structure is not uniform. Our results provide a unique perspective on the electrically induced filament formation in metal-insulator transition materials, which further the basic understanding of this resistive switching. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Comments: 29 pages, 10 figures; 19 pages main text, 3 figures; 10 pages Supplementary material, 7 figures

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Authors: Pavel Salev, Lorenzo Fratino, Dayne Sasaki, Soumen Bag, Yayoi Takamura, Marcelo Rozenberg, Ivan K. Schuller

Abstract: Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport pr… ▽ More Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport properties in the ferromagnetic oxide (La,Sr)MnO3 (LSMO) during the electrical triggering of an intrinsic metal-insulator transition (MIT) that produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, i.e., the formation of an insulating barrier perpendicular to the current flow, enabling an electrically actuated ferromagnetic-paramagnetic-ferromagnetic phase separation. At the threshold voltage of the MIT triggering, both anisotropic and colossal magnetoresistances exhibit anomalies including a large increase in magnitude and a sign flip. Computational analysis revealed that these anomalies originate from the coupling between the switching-induced phase separation state and the intrinsic magnetoresistance of LSMO. This work demonstrates that driving the MIT material into an out-of-equilibrium resistive switching state provides the means to electrically control of the magnetotransport phenomena. △ Less

Submitted 6 September, 2023; v1 submitted 17 August, 2023; originally announced August 2023.

Correlative map** of local hysteresis properties in VO$_2$

Authors: Melissa Alzate Banguero, Sayan Basak, Nicolas Raymond, Forrest Simmons, Pavel Salev, Ivan K. Schuller, Lionel Aigouy, Erica W. Carlson, Alexandre Zimmers

Abstract: We have developed a new optical microscopy technique able to track micron-sized surface clusters as temperature is varied. Potential candidates for study include phase separated metal-insulator materials, ferroelectrics, and porous structures. Several key techniques (including autofocus, step motor/cross correlation alignments, single-pixel thresholding, pair connectivity correlation length and im… ▽ More We have developed a new optical microscopy technique able to track micron-sized surface clusters as temperature is varied. Potential candidates for study include phase separated metal-insulator materials, ferroelectrics, and porous structures. Several key techniques (including autofocus, step motor/cross correlation alignments, single-pixel thresholding, pair connectivity correlation length and image convolution) were implemented in order to obtain a time series of thresholded images. Here, we apply this new method to probe the archetypal phase separated insulator-metal transition in VO$_2$. A precise time and temperature series of the insulator-metal transition was achieved, allowing us to construct for the first time in this material spatial maps of the transition temperature T$_c$. These maps reveal multiple interesting features such as fractal electronic patterns on micron scales, regions of the sample with an extremely large or nearly absent local hysteresis, a positive correlation between the T$_c$ value and the hysteresis width $Δ$T$_c$, and high cycle-to-cycle reproducibility of the transition. These maps also allow for the identification of individual pixels with unique transition characteristics. This unprecedented knowledge of the local properties of each spot along with the behavior of the entire network paves the way to novel electronics applications enabled by, {\em e.g.}, addressing specific regions with desired memory and/or switching characteristics, as well as detailed explorations of open questions in the theory of hysteresis. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Deep Learning Hamiltonians from Disordered Image Data in Quantum Materials

Authors: S. Basak, M. Alzate Banguero, L. Burzawa, F. Simmons, P. Salev, L. Aigouy, M. M. Qazilbash, I. K. Schuller, D. N. Basov, A. Zimmers, E. W. Carlson

Abstract: The capabilities of image probe experiments are rapidly expanding, providing new information about quantum materials on unprecedented length and time scales. Many such materials feature inhomogeneous electronic properties with intricate pattern formation on the observable surface. This rich spatial structure contains information about interactions, dimensionality, and disorder -- a spatial encodin… ▽ More The capabilities of image probe experiments are rapidly expanding, providing new information about quantum materials on unprecedented length and time scales. Many such materials feature inhomogeneous electronic properties with intricate pattern formation on the observable surface. This rich spatial structure contains information about interactions, dimensionality, and disorder -- a spatial encoding of the Hamiltonian driving the pattern formation. Image recognition techniques from machine learning are an excellent tool for interpreting information encoded in the spatial relationships in such images. Here, we develop a deep learning framework for using the rich information available in these spatial correlations in order to discover the underlying Hamiltonian driving the patterns. We first vet the method on a known case, scanning near-field optical microscopy on a thin film of VO2. We then apply our trained convolutional neural network architecture to new optical microscope images of a different VO2 film as it goes through the metal-insulator transition. We find that a two-dimensional Hamiltonian with both interactions and random field disorder is required to explain the intricate, fractal intertwining of metal and insulator domains during the transition. This detailed knowledge about the underlying Hamiltonian paves the way to using the model to control the pattern formation via, e.g., tailored hysteresis protocols. We also introduce a distribution-based confidence measure on the results of a multi-label classifier, which does not rely on adversarial training. In addition, we propose a new machine learning based criterion for diagnosing a physical system's proximity to criticality. △ Less

Submitted 2 November, 2022; originally announced November 2022.

Journal ref: Phys. Rev. B 107, 205121 (2023)

Tuning spin-orbit torques across the phase transition in VO$_2$/NiFe heterostructure

Authors: Jun-young Kim, Joel Cramer, Kyujoon Lee, Dong-Soo Han, Dongwook Go, Pavel Salev, Pavel N. Papa, Nicolas M. Vargas, Ivan K. Schuller, Yuriy Mokrousov, Gerhard Jakob, Mathias Kläui

Abstract: The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques in VO$_2$/NiFe heterostructures were investigated using spin-torque ferromagnetic resonance, where the VO$_2$ layer undergoes a prominent insulator-metal transit… ▽ More The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques in VO$_2$/NiFe heterostructures were investigated using spin-torque ferromagnetic resonance, where the VO$_2$ layer undergoes a prominent insulator-metal transition. A roughly two-fold increase in the Gilbert dam** parameter, $α$, with temperature was attributed to the change in the VO$_2$/NiFe interface spin absorption across the VO$_2$ phase transition. More remarkably, a large modulation ($\pm$100%) and a sign change of the current-induced spin-orbit torque across the VO$_2$ phase transition suggest two competing spin-orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO$_2$, corroborated by our first-principles calculation of spin Hall conductivity, $σ_{SH} \approx 10^4 \frac{\hbar}{e} Ω^{-1} m^{-1}$, is verified as the main source of the spin-orbit torque in the metallic phase. The self-induced/anomalous torque in NiFe, of the opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO$_2$, could be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin-orbit torques of materials which undergo phase transitions for new device functionalities. △ Less

Submitted 30 January, 2022; originally announced January 2022.

Comments: 16 pages, 5 figures

Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers

Authors: Christian T. Wolowiec, Juan Gabriel Ramírez, Min-Han Lee, Nicolas M. Vargas, Ali C. Basaran, Pavel Salev, Ivan K. Schuller

Abstract: We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromag… ▽ More We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromagnetic resonance measurements show that this change in magnetic anisotropy is reversible with temperature. We identify two structural properties of the V$_2$O$_3$/Ni bilayers affecting the in-plane magnetic anisotropy: (1) a growth-induced uniaxial magnetic anisotropy associated with step-like terraces in the bilayer microstructure and (2) a low-temperature strain-induced biaxial anisotropy associated with the V$_2$O$_3$ structural phase transition. Magnetoresistance measurements corroborate the change in magnetic anisotropy across the structural transition and suggest that the negative magnetostriction of Ni leads to the emergence of a strain-induced easy-axis. This shows that a temperature-dependent structural transition in V$_2$O$_3$ may be used to tune the magnetic anisotropy in an adjacent ferromagnetic thin film. △ Less

Submitted 23 December, 2021; originally announced December 2021.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Materials 6, 064408 (2022)

Voltage-controlled magnetism enabled by resistive switching

Authors: Pavel Salev, Iana Volvach, Dayne Sasaki, Pavel Lapa, Yayoi Takamura, Vitaliy Lomakin, Ivan K Schuller

Abstract: The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase trans… ▽ More The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. This switching occurs in a characteristic spatial pattern: the formation of a transverse insulating barrier inside a metallic matrix resulting in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. We found that the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a very broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems. △ Less

Submitted 13 August, 2021; originally announced August 2021.

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Authors: Coline Adda, Min-Han Lee, Yoav Kalcheim, Pavel Salev, Rodolfo Rocco, Nicolas M. Vargas, Nareg Ghazikhanian, Marcelo Rozenberg, Ivan K. Schuller

Abstract: Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 device… ▽ More Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations. △ Less

Submitted 23 December, 2020; originally announced December 2020.

Resistive switching in reverse: voltage driven formation of a transverse insulating barrier

Authors: Pavel Salev, Lorenzo Fratino, Dayne Sasaki, Rani Berkoun, Javier del Valle, Yoav Kalcheim, Yayoi Takamura, Marcelo Rozenberg, Ivan K. Schuller

Abstract: Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that procee… ▽ More Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that proceeds via nucleation and growth of an insulating barrier perpendicular to the driving current. The barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. Electrically inducing a transverse barrier enables a novel approach to voltage-controlled magnetism. By triggering a metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism can be achieved by a global voltage bias applied to the whole device. △ Less

Submitted 15 September, 2020; originally announced September 2020.

Non-Thermal Resistive Switching in Mott Insulators

Authors: Yoav Kalcheim, Alberto Camjayi, Javier del Valle, Pavel Salev, Marcelo Rozenberg, Ivan K. Schuller

Abstract: Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and develo** novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying n… ▽ More Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and develo** novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a do** driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators. △ Less

Submitted 22 August, 2019; originally announced August 2019.