Showing 1–6 of 6 results for author: Sah, R K

Effect of Strain on the Band Gap of Monolayer MoS$_2$

Authors: Raj K. Sah, Hong Tang, Chandra Shahi, Adrienn Ruzsinszky, John P. Perdew

Abstract: Monolayer $\mathrm{MoS_2}$ under strain has many interesting properties and possible applications in technology. A recent experimental study examined the effect of strain on the bandgap of monolayer $\mathrm{MoS_2}$ on a mildly curved graphite surface, reporting that under biaxial strain with a Poisson's ratio of 0.44, the bandgap decreases at a rate of 400 meV/% strain. In this work, we performed… ▽ More Monolayer $\mathrm{MoS_2}$ under strain has many interesting properties and possible applications in technology. A recent experimental study examined the effect of strain on the bandgap of monolayer $\mathrm{MoS_2}$ on a mildly curved graphite surface, reporting that under biaxial strain with a Poisson's ratio of 0.44, the bandgap decreases at a rate of 400 meV/% strain. In this work, we performed density functional theory (DFT) calculations for a free-standing $\mathrm{MoS_2}$ monolayer, using the generalized gradient approximation (GGA) PBE, the hybrid functional HSE06, and many-body perturbation theory with the GW approximation using PBE wavefunctions (G0W0@PBE). We found that under biaxial strain with the experimental Poisson's ratio, the bandgap decreases at rates of 63 meV/% strain (PBE), 73 meV/% strain (HSE06), and 43 meV/% strain (G0W0@PBE), which are significantly smaller than the experimental rate. We also found that PBE predicts a similarly smaller rate (90 meV/% strain) for a different Poisson's ratio of 0.25. Spin-orbit correction (SOC) has little effect on the gap or its strain dependence. Additionally, we observed a semiconductor-to-metal transition under an equal tensile biaxial strain of 10% and a transition from a direct to an indirect bandgap, consistent with previous theoretical work. △ Less

Submitted 11 June, 2024; v1 submitted 10 June, 2024; originally announced June 2024.

Depth-resolved profile of the interfacial ferromagnetism in $CaMnO_{3}/CaRuO_{3}$ superlattices

Authors: J. R. Paudel, A. Mansouri Tehrani, M. Terilli, M. Kareev, J. Grassi, R. K. Sah, L. Wu, V. N. Strocov, C. Klewe, P. Shafer, J. Chakhalian, N. A. Spaldin, A. X. Gray

Abstract: Emergent magnetic phenomena at interfaces represent a frontier in materials science, pivotal for advancing technologies in spintronics and magnetic storage. In this letter, we utilize a suite of advanced X-ray spectroscopic and scattering techniques to investigate emergent interfacial ferromagnetism in oxide superlattices comprised of antiferromagnetic CaMnO3 and paramagnetic CaRuO3. Our findings… ▽ More Emergent magnetic phenomena at interfaces represent a frontier in materials science, pivotal for advancing technologies in spintronics and magnetic storage. In this letter, we utilize a suite of advanced X-ray spectroscopic and scattering techniques to investigate emergent interfacial ferromagnetism in oxide superlattices comprised of antiferromagnetic CaMnO3 and paramagnetic CaRuO3. Our findings challenge prior theoretical models by demonstrating that the ferromagnetism extends beyond the interfacial layer into multiple unit cells of CaMnO3 and exhibits an asymmetric profile. Complementary density functional calculations reveal that the interfacial ferromagnetism is driven by the double exchange mechanism, facilitated by charge transfer from Ru to Mn ions. Additionally, defect chemistry, particularly the presence of oxygen vacancies, likely plays a crucial role in modifying the magnetic moments at the interface, leading to the observed asymmetry between the top and bottom CaMnO3 interfacial magnetic layers. Our findings underscore the potential of manipulating interfacial ferromagnetism through point defect engineering. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Direct experimental evidence of tunable charge transfer at the $LaNiO_{3}/CaMnO_{3}$ ferromagnetic interface

Authors: J. R. Paudel, M. Terilli, T. -C. Wu, J. D. Grassi, A. M. Derrico, R. K. Sah, M. Kareev, C. Klewe, P. Shafer, A. Gloskovskii, C. Schlueter, V. N. Strocov, J. Chakhalian, A. X. Gray

Abstract: Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this letter, we utilize a combination of depth-resolved soft X-ray standing-wave and… ▽ More Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this letter, we utilize a combination of depth-resolved soft X-ray standing-wave and hard X-ray photoelectron spectroscopies in conjunction with polarization-dependent X-ray absorption spectroscopy to investigate the effects of the metal-insulator transition in $LaNiO_{3}$ on the electronic and magnetic states at the $LaNiO_{3}/CaMnO_{3}$ interface. We report on a direct observation of the reduced effective valence state of the interfacial Mn cations in the metallic superlattice with an above-critical $LaNiO_{3}$ thickness (6 u.c.) due to the leakage of itinerant Ni 3d $e_{g}$ electrons into the interfacial $CaMnO_{3}$ layer. Conversely, in an insulating superlattice with a below-critical $LaNiO_{3}$ thickness of 2 u.c., a homogeneous effective valence state of Mn is observed throughout the $CaMnO_{3}$ layers due to the blockage of charge transfer across the interface. The ability to switch and tune interfacial charge transfer enables precise control of the emergent ferromagnetic state at the $LaNiO_{3}/CaMnO_{3}$ interface and, thus, has far-reaching consequences on the future strategies for the design of next-generation spintronic devices. △ Less

Submitted 13 April, 2023; originally announced April 2023.

Ultra-thin Epitaxial MgB2 on SiC: Substrate Surface Polarity Dependent Properties

Authors: Weibing Yang, Leila Kasaei, Hussein Hijazi, Sylvie Rangan, Yao-wen Yeh, Raj K. Sah, Jay R. Paudel, Ke Chen, Alexander X. Gray, Philip Batson, Leonard C. Feldman, Xiaoxing Xi

Abstract: High quality, ultrathin, superconducting films are required for advanced devices such as hot-electron bolometers, superconducting nanowire single photon detectors, and quantum applications. Using Hybrid Physical-Chemical Vapor Deposition (HPCVD), we show that MgB2 films as thin as 4 nm can be fabricated on the carbon terminated 6H-SiC (0001) surface with a superconducting transition temperature ab… ▽ More High quality, ultrathin, superconducting films are required for advanced devices such as hot-electron bolometers, superconducting nanowire single photon detectors, and quantum applications. Using Hybrid Physical-Chemical Vapor Deposition (HPCVD), we show that MgB2 films as thin as 4 nm can be fabricated on the carbon terminated 6H-SiC (0001) surface with a superconducting transition temperature above 33K and a rms roughness of 0.7 nm. Remarkably, the film quality is a function of the SiC surface termination, with the C-terminated surface preferred to the Si-terminated surface. To understand the MgB2 thin film/ SiC substrate interactions giving rise to this difference, we characterized the interfacial structures using Rutherford backscattering spectroscopy/channeling, electron energy loss spectroscopy, and x-ray photoemission spectroscopy. The MgB2/SiC interface structure is complex and different for the two terminations. Both terminations incorporate substantial unintentional oxide layers influencing MgB2 growth and morphology, but with different extent, intermixing and interface chemistry. In this paper, we report measurements of transport, resistivity, and critical superconducting temperature of MgB2/SiC that are different for the two terminations, and link interfacial structure variations to observed differences. The result shows that the C face of SiC is a preferred substrate for the deposition of ultrathin superconducting MgB2 films. △ Less

Submitted 4 January, 2023; originally announced January 2023.

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

Authors: M. Chrysler, J. Gabel, T. -L. Lee, A. N. Penn, B. E. Matthews, D. M. Kepaptsoglou, Q. M. Ramasse, J. R. Paudel, R. K. Sah, J. D. Grassi, Z. Zhu, A. X. Gray, J. M. LeBeau, S. R. Spurgeon, S. A. Chambers, P. V. Sushko, J. H. Ngai

Abstract: We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipo… ▽ More We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Functionalizing the interface dipole to enable electrostatic altering of band alignment opens new pathways to realize novel behavior in semiconducting heterojunctions. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Materials 5, 104603 (2021)

Strain-induced anion ordering in perovskite oxyfluoride films

Authors: Jiayi Wang, Yong** Shin, Jay R. Paudel, Joseph D. Grassi, Raj K. Sah, Weibing Yang, Evguenia Karapetrova, Abdulhadi Zaidan, Vladimir N. Strocov, Christoph Klewe, Padraic Shafer, Alexander X. Gray, James M. Rondinelli, Steven J. May

Abstract: Anionic ordering is a promising route to engineer physical properties in functional heteroanionic materials. A central challenge in the study of anion-ordered compounds lies in develo** robust synthetic strategies to control anion occupation and in understanding the resultant implications for electronic structure. Here, we show that epitaxial strain induces preferential occupation of F and O on… ▽ More Anionic ordering is a promising route to engineer physical properties in functional heteroanionic materials. A central challenge in the study of anion-ordered compounds lies in develo** robust synthetic strategies to control anion occupation and in understanding the resultant implications for electronic structure. Here, we show that epitaxial strain induces preferential occupation of F and O on the anion sites in perovskite oxyfluoride SrMnO2.5-dFg films grown on different substrates. Under compressive strain, F tends to take the apical-like sites, which was revealed by F and O K-edge linearly polarized x-ray absorption spectroscopy and density functional theory calculations, resulting in an enhanced c-axis expansion. Under tensile strain, F tends to take the equatorial-like sites, enabling the longer Mn-F bonds to lie within the plane. The anion ordered oxyfluoride films exhibit a significant orbital polarization of the 3d electrons, distinct F-site dependence to their valence band density of states, and an enhanced resistivity when F occupies the apical-like anion site compared to the equatorial-like site. By demonstrating a general strategy for inducing anion-site order in oxyfluoride perovskites, this work lays the foundation for future materials design and synthesis efforts that leverage this greater degree of atomic control to realize new polar or quasi-two-dimensional materials. △ Less

Submitted 2 December, 2020; originally announced December 2020.