Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires
Authors:
Pok-Lam Tse,
Laura Mugica-Sanchez,
Fugu Tian,
Oliver Ruger,
Andreas Undisz,
George Moethrath,
Susumu Takahashi,
Carsten Ronning,
Jia Grace Lu
Abstract:
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb…
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Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb$_2$Te$_3$ nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices.
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Submitted 15 August, 2020;
originally announced August 2020.
