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Robust Nuclear Spin Polarization via Ground-State Level Anti-Crossing of Boron Vacancy Defects in Hexagonal Boron Nitride
Authors:
Shihao Ru,
Zhengzhi Jiang,
Haidong Liang,
Jonathan Kenny,
Hongbing Cai,
Xiaodan Lyu,
Robert Cernansky,
Feifei Zhou,
Yuzhe Yang,
Kenji Watanabe,
Takashi Taniguch,
Fuli Li,
Koh Teck Seng,
Xiaogang Liu,
Fedor Jelezko,
Andrew A. Bettiol,
Weibo Gao
Abstract:
Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy ($\mathrm{V_B^-}$) defects in hexagonal boron nitride (h-BN) using ground-state level anti-crossing (GSLAC). We show that GSLAC-assisted nuclear polarization can be achieved with significant…
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Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy ($\mathrm{V_B^-}$) defects in hexagonal boron nitride (h-BN) using ground-state level anti-crossing (GSLAC). We show that GSLAC-assisted nuclear polarization can be achieved with significantly lower laser power than excited-state level anti-crossing, making the process experimentally more viable. Furthermore, we have demonstrated direct optical readout of nuclear spins for $\mathrm{V_B^-}$ in h-BN. Our findings suggest that GSLAC is a promising technique for the precise control and manipulation of nuclear spins in $\mathrm{V_B^-}$ defects in h-BN.
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Submitted 31 May, 2024; v1 submitted 28 June, 2023;
originally announced June 2023.
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Quantum metric-induced nonlinear transport in a topological antiferromagnet
Authors:
Naizhou Wang,
Daniel Kaplan,
Zhaowei Zhang,
Tobias Holder,
Ning Cao,
Aifeng Wang,
Xiaoyuan Zhou,
Feifei Zhou,
Zhengzhi Jiang,
Chusheng Zhang,
Shihao Ru,
Hongbing Cai,
Kenji Watanabe,
Takashi Taniguchi,
Binghai Yan,
Weibo Gao
Abstract:
The Berry curvature and quantum metric are the imaginary part and real part, respectively, of the quantum geometric tensor which characterizes the topology of quantum states. The former is known to generate a zoo of important discoveries such as quantum Hall effect and anomalous Hall effect (AHE), while the consequences of the quantum metric have rarely been probed by transport. In this work, we o…
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The Berry curvature and quantum metric are the imaginary part and real part, respectively, of the quantum geometric tensor which characterizes the topology of quantum states. The former is known to generate a zoo of important discoveries such as quantum Hall effect and anomalous Hall effect (AHE), while the consequences of the quantum metric have rarely been probed by transport. In this work, we observed quantum metric induced nonlinear transport, including both nonlinear AHE and diode-like nonreciprocal longitudinal response, in thin films of a topological antiferromagnet, MnBi$_2$Te$_4$. Our observation reveals that the transverse and longitudinal nonlinear conductivities reverse signs when reversing the antiferromagnetic order, diminish above the Néel temperature, and are insensitive to disorder scattering, thus verifying their origin in the band structure topology. They also flip signs between electron and hole-doped regions, in agreement with theoretical calculations. Our work provides a pathway to probe the quantum metric through nonlinear transport and to design magnetic nonlinear devices.
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Submitted 1 July, 2023; v1 submitted 15 June, 2023;
originally announced June 2023.
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Quantum interference of resonance fluorescence from Germanium-vacancy color centers in diamond
Authors:
Disheng Chen,
Johannes Froech,
Shihao Ru,
Hongbing Cai,
Naizhou Wang,
Giorgio Adamo,
John Scott,
Fuli Li,
Nikolay Zheludev,
Igor Aharonovich,
Wei-bo Gao
Abstract:
Resonance fluorescence from a quantum emitter is an ideal source to extract indistinguishable photons. By using the cross polarization to suppress the laser scattering, we observed resonance fluorescence from GeV color centers in diamond at cryogenic temperature. The Fourier-transform-limited linewidth emission with $T_2/2T_1\sim0.86$ allows for two-photon interference based on single GeV color ce…
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Resonance fluorescence from a quantum emitter is an ideal source to extract indistinguishable photons. By using the cross polarization to suppress the laser scattering, we observed resonance fluorescence from GeV color centers in diamond at cryogenic temperature. The Fourier-transform-limited linewidth emission with $T_2/2T_1\sim0.86$ allows for two-photon interference based on single GeV color center. Under pulsed excitation, the 24 ns separated photons exhibit a Hong-Ou-Mandel visibility of $0.604\pm0.022$, while the continuous-wave excitation leads to a coalescence time window of 1.05 radiative lifetime. Together with single-shot readout of spin states, it paves the way towards building a quantum network with GeV color centers in diamond.
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Submitted 16 February, 2022;
originally announced February 2022.
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Excited-state optically detected magnetic resonance of spin defects in hexagonal boron nitride
Authors:
Zhao Mu,
Hongbing Cai,
Disheng Chen,
Zhengzhi Jiang,
Shihao Ru,
Xiaodan Lyu,
Xiaogang Liu,
Igor Aharonovich,
Weibo Gao
Abstract:
Negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (hBN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in the ES of DES = 2160 MHz and an optically detected magnetic resonance (ODMR) contrast of 12% at cryogenic tem…
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Negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (hBN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in the ES of DES = 2160 MHz and an optically detected magnetic resonance (ODMR) contrast of 12% at cryogenic temperature. The ES has a g-factor similar to the ground state. The ES photodynamics is further elucidated by measuring the level anti-crossing of the VB- defects under varying external magnetic fields. In contrast to nitrogen vacancy (NV-) centers in diamond, the emission change caused by excited-state level anti-crossing (ESLAC) is more prominent at cryo-temperature than at room temperature. Our results provide important information for utilizing the spin defects of hBN in quantum technology.
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Submitted 9 October, 2022; v1 submitted 13 December, 2021;
originally announced December 2021.
