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Magnetic domains in ultrathin, bulk-like and proximity-coupled Europium Oxide
Authors:
Seema,
Moumita Kundu,
Paul Rosenberger,
Henrik Jentgens,
Ulrich Nowak,
Martina Müller
Abstract:
The control of electron spins in materials that are simultaneously ferromagnetic and insulating opens up a wealth of quantum phenomena in spin-based electronics. Thin films of europium oxide (EuO) are ideal for the generation and manipulation of spin-polarized states, but so far there are no experimental literature reports on the magnetic domain patterns for EuO. However, at these microscopic leng…
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The control of electron spins in materials that are simultaneously ferromagnetic and insulating opens up a wealth of quantum phenomena in spin-based electronics. Thin films of europium oxide (EuO) are ideal for the generation and manipulation of spin-polarized states, but so far there are no experimental literature reports on the magnetic domain patterns for EuO. However, at these microscopic length scales, magnetic relaxation between the remanent and demagnetized states takes place in any spintronic device. This relaxation process involves displacements of magnetic domain walls and can therefore be strongly influenced by the film structure and thickness. Here we present an investigation of the temperature-dependent behavior of magnetic domains and hysteresis in bulk-like (25 nm) and ultrathin (3 nm) EuO films. Magneto-optical Kerr microscopy is used, a technique that is a valuable tool to explore microscopic features such as spin dynamics and magnetic domain walls. Significant Kerr rotation in EuO led to high-contrast magnetic domain images in thick films, facilitating observation of domain dynamics. The critical temperature (TC) and coercivity shows strong thickness-dependent variations. The analysis and comparison of hysteresis loops and domain imaging in EuO and EuO/Co reveal proximity effect-induced antiferromagnetic coupling of both layers. To elucidate the magnetization reversal dynamics in EuO, micromagnetic simulations using MuMax3 were performed below and above TC. This comprehensive approach aims to comprehend the impact of magnetism and magnetic proximity effect in EuO on the micromagnetic scale, potentially extending its magnetic ordering beyond TC.
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Submitted 26 April, 2024;
originally announced April 2024.
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2D synthetic ferrimagnets by magnetic proximity coupling
Authors:
Paul Rosenberger,
Moumita Kundu,
Andrei Gloskovskii,
Christoph Schlueter,
Ulrich Nowak,
Martina Müller
Abstract:
Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface. For a low-TC rare-earth FM coupled to a 3d transition metal FM, even room temperature magnetism is within reach. In addition, magnetic proximity coupling is pa…
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Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface. For a low-TC rare-earth FM coupled to a 3d transition metal FM, even room temperature magnetism is within reach. In addition, magnetic proximity coupling is particularly promising for increasing the magnetic order of metastable materials such as europium monoxide (EuO) beyond their bulk TC, since neither the stoichiometry nor the insulating properties are modified.
We investigate the magnetic proximity effect at Fe/EuO and Co/EuO interfaces using hard X-ray photoelectron spectroscopy. By exciting the FM layers with circularly polarized light, magnetic dichroism is observed in angular dependence on the photoemission geometry. In this way, the depth-dependence of the magnetic signal is determined element-specifically for the EuO and 3d FM parts of the bilayers. In connection with atomistic spin dynamics simulations, the thickness of EuO layer is found to be crucial, indicating that the observed antiferromagnetic proximity coupling is a short-ranged and genuine interface phenomenon. This fact turns the bilayer into a strong synthetic ferrimagnet. The increase in magnetic order in EuO occurs in a finite spatial range and is therefore particularly strong in the 2D limit-a counterintuitive but very useful phenomenon for spin-based device applications.
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Submitted 19 April, 2024;
originally announced April 2024.
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Tracking Surface Charge Dynamics on Single Nanoparticles
Authors:
Ritika Dagar,
Wenbin Zhang,
Philipp Rosenberger,
Thomas M. Linker,
Ana Sousa-Castillo,
Marcel Neuhaus,
Sambit Mitra,
Shubhadeep Biswas,
Alexandra Feinberg,
Adam M. Summers,
Aiichiro Nakano,
Priya Vashishta,
Fuyuki Shimojo,
Jian Wu,
Cesar Costa Vera,
Stefan A. Maier,
Emiliano Cortés,
Boris Bergues,
Matthias F. Kling
Abstract:
Surface charges play a fundamental role in physics and chemistry, particularly in sha** the catalytic properties of nanomaterials. Tracking nanoscale surface charge dynamics remains challenging due to the involved length and time scales. Here, we demonstrate real-time access to the nanoscale charge dynamics on dielectric nanoparticles employing reaction nanoscopy. We present a four-dimensional v…
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Surface charges play a fundamental role in physics and chemistry, particularly in sha** the catalytic properties of nanomaterials. Tracking nanoscale surface charge dynamics remains challenging due to the involved length and time scales. Here, we demonstrate real-time access to the nanoscale charge dynamics on dielectric nanoparticles employing reaction nanoscopy. We present a four-dimensional visualization of the non-linear charge dynamics on strong-field irradiated single SiO$_2$ nanoparticles with femtosecond-nanometer resolution and reveal how surface charges affect surface molecular bonding with quantum dynamical simulations. We performed semi-classical simulations to uncover the roles of diffusion and charge loss in the surface charge redistribution process. Understanding nanoscale surface charge dynamics and its influence on chemical bonding on a single nanoparticle level unlocks an increased ability to address global needs in renewable energy and advanced healthcare.
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Submitted 4 January, 2024;
originally announced January 2024.
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Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO$_3$ Interfaces
Authors:
Pia M. Düring,
Paul Rosenberger,
Lutz Baumgarten,
Fatima Alarab,
Frank Lechermann,
Vladimir N. Strocov,
Martina Müller
Abstract:
Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers - either negatively (n) charged electrons or positively (p) charged holes. Here, w…
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Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers - either negatively (n) charged electrons or positively (p) charged holes. Here, we provide direct evidence for individually emerging n- or p-type 2D band dispersions in STO-based heterostructures using resonant photoelectron spectroscopy. The key to tuning the carrier character is the oxidation state of an adjacent Fe-based interface layer: For Fe and FeO, hole bands emerge in the empty band gap region of STO due to hybridization of Ti and Fe-derived states across the interface, while for Fe$_3$O$_4$ overlayers, an 2D electron system is formed. Unexpected oxygen vacancy characteristics arise for the hole-type interfaces, which as of yet had been exclusively assigned to the emergence of 2DESs. In general, this finding opens up the possibility to straightforwardly switch the type of conductivity at STO interfaces by the oxidation state of a redox overlayer. This will extend the spectrum of phenomena in oxide electronics, including the realization of combined n/p-type all-oxide transistors or logic gates.
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Submitted 15 December, 2023;
originally announced December 2023.
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Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments
Authors:
Paul Rosenberger,
Matthias Opel,
Stephan Geprägs,
Hans Huebl,
Rudolf Gross,
Martina Müller,
Matthias Althammer
Abstract:
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utiliz…
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The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the complex spin mixing interface conductance. We find that the imaginary part is by one order of magnitude larger than the real part. Both decrease with increasing temperature. This reduction is in agreement with thermal fluctuations in the ferromagnet.
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Submitted 3 March, 2021;
originally announced March 2021.
