Showing 1–17 of 17 results for author: Ronning, C

Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

Authors: Stephen A Church, Francesco Vitale, Aswani Gopakumar, Nikita Gagrani, Yunyan Zhang, Nian Jiang, Hark Hoe Tan, Chennupati Jagadish, Huiyun Liu, Hannah Joyce, Carsten Ronning, Patrick Parkinson

Abstract: Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the p… ▽ More Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the performance leads to inhomogeneity across the population. While this has been studied and optimized for individual material systems, no architecture-wide insight is available. Here, nine nanowire laser material systems are studied and compared using 55,516 nanowire lasers to provide statistically robust insight into performance. These results demonstrate that, while it may be important to optimise internal quantum efficiency for certain materials, cavity effects are always critical. Our study provides a roadmap to optimize the performance of nanowire lasers made from any material: this can be achieved by ensuring a narrow spread of lengths and end-facet reflectivities. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Authors: Johannes K. Zettler, Pierre Corfdir, Christian Hauswald, Esperanza Luna, Uwe Jahn, Timur Flissikowski, Emanuel Schmidt, Carsten Ronning, Achim Trampert, Lutz Geelhaar, Holger T. Grahn, Oliver Brandt, Sergio Fernández-Garrido

Abstract: The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative s… ▽ More The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, after peer review

Journal ref: Nano Letters 2016, 16, 2, 973

Ion irradiation-induced sinking of Ag nanocubes into substrates

Authors: Shiva Choupanian, Wolfhard Moeller, Martin Seyring, Claudia Pacholski, Elke Wendler, Andreas Undisz, Carsten Ronning

Abstract: Ion irradiation can cause burrowing of nanoparticles in substrates, strongly depending on the material properties and irradiation parameters. In this study, we demonstrate that the sinking process can be accomplished with ion irradiation of cube-shaped Ag nanoparticles on top of silicon; how ion channeling affects the sinking rate; and underline the importance of the amorphous state of the substra… ▽ More Ion irradiation can cause burrowing of nanoparticles in substrates, strongly depending on the material properties and irradiation parameters. In this study, we demonstrate that the sinking process can be accomplished with ion irradiation of cube-shaped Ag nanoparticles on top of silicon; how ion channeling affects the sinking rate; and underline the importance of the amorphous state of the substrate upon ion irradiation. Based on our experimental findings, the sinking process is described as being driven by capillary forces enabled by ion-induced plastic flow of the substrate. △ Less

Submitted 30 May, 2023; originally announced May 2023.

Comments: the manuscript has 25 pages and 6 figures

MSC Class: 00A79

Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range

Authors: Alexander Koch, Hongyan Mei, Jura Rensberg, Martin Hafermann, Jad Salman, Chenghao Wan, Raymond Wambold, Daniel Blaschke, Heidemarie Schmidt, Jürgen Salfeld, Sebastian Geburt, Mikhail A. Kats, Carsten Ronning

Abstract: We demonstrate heavy and hyper do** of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved… ▽ More We demonstrate heavy and hyper do** of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved heavily doped ZnO:Ga with free-carrier concentrations of ~10^21 cm^(-3), resulting in a plasma wavelength of 1.02 um, which is substantially shorter than the telecommunication wavelength of 1.55 um. Thus, our approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 um, providing a promising plasmonic material for applications in this regime. △ Less

Submitted 31 October, 2022; originally announced October 2022.

Comments: Main text + supplementary

Nonlinear optical signal generation mediated by a plasmonic azimuthally chirped grating

Authors: Parijat Barman, Abhik Chakraborty, Denis Akimov, Ankit Kumar Singh, Tobias Meyer-Zedler, Xiaofei Wu, Carsten Ronning, Michael Schmitt, Jürgen Popp, Jer-Shing Huang

Abstract: The deployment of plasmonic nanostructures to enhance nonlinear signal generation requires effective far-to-near field coupling and phase matching for frequency conversion. While the latter can be easily achieved at plasmonic hotspots, the former is an antenna problem that requires dedicated structural design and optimization. Plasmonic gratings are a simple but effective platform for nonlinear si… ▽ More The deployment of plasmonic nanostructures to enhance nonlinear signal generation requires effective far-to-near field coupling and phase matching for frequency conversion. While the latter can be easily achieved at plasmonic hotspots, the former is an antenna problem that requires dedicated structural design and optimization. Plasmonic gratings are a simple but effective platform for nonlinear signal generation since they provide a well-defined momentum for photon-plasmon coupling and local hotspots for frequency conversion. In this work, a plasmonic azimuthally chirped grating (ACG), which provides spatially resolved broadband momentum for photon-plasmon coupling, was exploited to investigate the plasmonic enhancement effect in two nonlinear optical processes, namely two-photon photoluminescence (TPPL) and second-harmonic generation (SHG). The spatial distributions of the nonlinear signals were determined experimentally by hyperspectral map** with ultrashort pulsed excitation. The experimental spatial distributions of nonlinear signals agree very well with the analytical prediction based solely on photon-plasmon coupling with the momentum of the ACG, revealing the antenna function of the grating in plasmonic nonlinear signal generation. This work highlights the importance of the antenna effect of the gratings for nonlinear signal generation and provides insight into the enhancement mechanism of plasmonic gratings in addition to local hotspot engineering. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Comments: 6 pages, 3 figures

Journal ref: Nano Lett. 2022, 22, 24, 9914-9919

Tuning nanowire lasers via hybridization with two-dimensional materials

Authors: Edwin Eobaldt, Francesco Vitale, Maximilian Zapf, Margarita Lapteva, Tarlan Hamzayev, Ziyang Gan, Emad Najafidehaghani, Christof Neumann, Antony George, Andrey Turchanin, Giancarlo Soavi, Carsten Ronning

Abstract: Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructure… ▽ More Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS2 monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS2 monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect). △ Less

Submitted 26 May, 2022; originally announced May 2022.

Journal ref: Nanoscale 2022, 14, 6822-6829

Acceleration and adiabatic expansion of multi-state fluorescence from a nanofocus

Authors: Nicholas A. Güsken, Ming Fu, Maximilian Zapf, Michael P. Nielsen, Paul Dichtl, Robert Röder, Alex S. Clark, Stefan A. Maier, Carsten Ronning, Rupert F Oulton

Abstract: Since Purcell's seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. Indeed, optical resonators such as microcavities and plasmonic nanostructures offer excellent control but only over a limited spectral range. Strategies to tune both… ▽ More Since Purcell's seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. Indeed, optical resonators such as microcavities and plasmonic nanostructures offer excellent control but only over a limited spectral range. Strategies to tune both emission and the resonator are often required, which preclude the possibility of enhancing multiple transitions simultaneously. In this letter, we report a more than 590-fold radiative emission enhancement across the telecommunications emission band of Erbium-ions in silica using a single non-resonant plasmonic waveguide. Our plasmonic waveguide uses a novel reverse nanofocusing approach to efficiently collect emission, making these devices brighter than all non-plasmonic control samples considered. Remarkably, the high broadband Purcell factor allows us to resolve the Stark-split electric dipole transitions, which are typically only observed under cryogenic conditions. Simultaneous Purcell enhancement of multiple quantum states is of interest for photonic quantum networks as well as on-chip data communications. △ Less

Submitted 17 February, 2022; originally announced February 2022.

Report number: 2719

Journal ref: Nature Communications volume 14, Article number: 2719 (2023)

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

Authors: Hongyan Mei, Alexander Koch, Chenghao Wan, Jura Rensberg, Zhen Zhang, Jad Salman, Martin Hafermann, Maximilian Schaal, Yuzhe Xiao, Raymond Wambold, Shriram Ramanathan, Carsten Ronning, Mikhail A. Kats

Abstract: We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subs… ▽ More We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of do** or defect density are required. △ Less

Submitted 2 June, 2022; v1 submitted 3 February, 2022; originally announced February 2022.

Comments: Main text + supplementary. Updated manuscript with some more science

Tuning exciton recombination rates in doped transition metaldichalcogenides

Authors: Theresa Kuechle, Sebastian Klimmer, Margarita Lapteva, Tarlan Hamzayev, Antony George, Andrey Turchanin, Torsten Fritz, Carsten Ronning, Marco Gruenewald, Giancarlo Soavi

Abstract: Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigat… ▽ More Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigate the interplay between do** and exciton-exciton annihilation (EEA) and their impact on the photoluminescence quantum yield in different TMD samples and related heterostructures. We demonstrate that the EEA threshold increases in highly doped samples, where the radiative and non-radiative recombination of trions dominates. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Journal ref: Optical Materials: X 12, 100097 (2021)

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Authors: Martin Hafermann, Robin Schock, Chenghao Wan, Jura Rensberg, Mikhail A. Kats, Carsten Ronning

Abstract: Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here, we demonstrate how ion irradiation can be used to tailor disorder in initially crystalline Ge2Sb2T… ▽ More Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here, we demonstrate how ion irradiation can be used to tailor disorder in initially crystalline Ge2Sb2Te5 (GST) thin films via the intentional creation of lattice defects. We found that continuous Ar ion irradiation at room temperature of GST films causes complete amorphization of GST when exceeding 0.6 (for rock-salt GST) and 3 (for hexagonal GST) displacements per atom (n_dpa). While the transition from rock-salt to amorphous GST is caused by progressive amorphization via the accumulation of lattice defects, several transitions occur in hexagonal GST upon ion irradiation. In hexagonal GST, the creation of point defects and small defect clusters leads to disordering of intrinsic vacancy layers (van der Waals gaps) that drives the electronic metal-insulator transition. Increasing disorder then induces a structural transition from hexagonal to rock-salt and then leads to amorphization. Furthermore, we observed different annealing behavior of defects for rock-salt and hexagonal GST. The higher amorphization threshold in hexagonal GST compared to rock-salt GST is caused by an increased defect-annealing rate, i.e., a higher resistance against ion-beam-induced disorder. Moreover, we observed that the recovery of defects in GST is on the time scale of seconds or less at room temperature. △ Less

Submitted 9 September, 2021; v1 submitted 2 September, 2021; originally announced September 2021.

Comments: Main text + supplementary. New version to slightly update the acknowledgements

Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires

Authors: Pok-Lam Tse, Laura Mugica-Sanchez, Fugu Tian, Oliver Ruger, Andreas Undisz, George Moethrath, Susumu Takahashi, Carsten Ronning, Jia Grace Lu

Abstract: Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb… ▽ More Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb$_2$Te$_3$ nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices. △ Less

Submitted 15 August, 2020; originally announced August 2020.

Comments: 25 pages, 14 figures

Carrier density driven lasing dynamics in ZnO nanowires

Authors: Marcel Wille, Chris Sturm, Tom Michalsky, Robert Röder, Carsten Ronning, Rüdiger Schmidt-Grund, Marius Grundmann

Abstract: We report on the temporal lasing dynamics of high quality ZnO nanowires using time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature… ▽ More We report on the temporal lasing dynamics of high quality ZnO nanowires using time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature dependent emission onset-time ($t_{\text{on}}$) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse. △ Less

Submitted 15 January, 2016; originally announced January 2016.

Comments: 7 pages, 5 figures

Journal ref: Nanotechnology 27, 225702 (2016)

Enhanced sputter yields on ion irradiated Au nano particles: energy and size dependence

Authors: Henry Holland-Moritz, Sebastian Scheeler, Christoph Stanglmair, Claudia Pacholski, Carsten Ronning

Abstract: Hexagonally arranged Au nano particles (NPs) exhibiting a broad size distribution ranging from 30 nm to 80 nm with a Gaussian shape were deposited on Si substrates and irradiated with Ar+ and Ga+ ions with various energies from 20 to 350 keV and 1 to 30 keV, respectively. The size and energy dependence of the sputter yield were measured using high resolution scanning electron microscopy image anal… ▽ More Hexagonally arranged Au nano particles (NPs) exhibiting a broad size distribution ranging from 30 nm to 80 nm with a Gaussian shape were deposited on Si substrates and irradiated with Ar+ and Ga+ ions with various energies from 20 to 350 keV and 1 to 30 keV, respectively. The size and energy dependence of the sputter yield were measured using high resolution scanning electron microscopy image analysis. These results were compared to simulation results obtained by iradina, a Monte Carlo (MC) code, which takes the specifics of the nano geometry into account. The experimental obtained sputter yields are significantly higher compared to the calculated simulation results for both bulk and the nano geometry. The difference can be clearly attributed to thermally driven effects, which significantly influence the measured sputter yields. △ Less

Submitted 5 May, 2015; originally announced May 2015.

Comments: 15 pages, 4 figures

Persistent ion beam induced conductivity in zinc oxide nanowires

Authors: Andreas Johannes, Raphael Niepelt, Martin Gnauck, Carsten Ronning

Abstract: We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will pot… ▽ More We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction. △ Less

Submitted 3 February, 2015; originally announced February 2015.

Journal ref: Applied Physics Letters 99, 252105 (2011)

Phonon-Assisted Lasing in ZnO Microwires at Room Temperature

Authors: T. Michalsky, M. Wille, C. P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann

Abstract: We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets are prerequisite. Above the excitation threshold power $P_{\textit{Th}}$ of typically $100\,kW/cm^2$, the recombination of free excitons under emission of two lo… ▽ More We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets are prerequisite. Above the excitation threshold power $P_{\textit{Th}}$ of typically $100\,kW/cm^2$, the recombination of free excitons under emission of two longitudinal optical phonons provides sufficient gain to overcome all losses in the microresonator and to result in laser oscillation. This threshold behavior is accompanied by a distinct change of the far and near field emission patterns, revealing the WGM related nature of the lasing modes. The spectral evolution as well as the characteristic behavior of the integrated photoluminescence intensity versus the excitation power unambiguously prove laser operation. Polarization-resolved measurements show that the laser emission is linear polarized perpendicular to the microwire axis (TE). △ Less

Submitted 14 November, 2014; v1 submitted 29 October, 2014; originally announced October 2014.

Comments: 4 pages, 3 figures

MSC Class: 78-05; 78A60

Journal ref: Appl. Phys. Lett. 105, 211106 (2014)

Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

Authors: A. Johannes, S. Noack, W. Paschoal Jr, S. Kumar, D. Jacobsson, H. Pettersson, L. Samuelson, K. A. Dick, G. Martinez-Criado, M. Burghammer, C. Ronning

Abstract: We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-X-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a cl… ▽ More We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-X-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clear enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency. △ Less

Submitted 25 March, 2015; v1 submitted 5 September, 2014; originally announced September 2014.

Comments: Includes 2 page Corrigendum

Polarization features of optically pumped CdS nanowire lasers

Authors: Robert Röder, Daniel Ploss, Arian Kriesch, Robert Buschlinger, Sebastian Geburt, Ulf Peschel, Carsten Ronning

Abstract: High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while emission out of the end facet of the nanowire was monitored in a 'head-on' measurement geometry. Highest pump-efficiency and most efficient absorption of the pump radiation are demonstrated for an incident electric field being polarized pa… ▽ More High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while emission out of the end facet of the nanowire was monitored in a 'head-on' measurement geometry. Highest pump-efficiency and most efficient absorption of the pump radiation are demonstrated for an incident electric field being polarized parallel to the nanowire axis. This polarization dependence, which was observed both above the lasing threshold and in the regime of amplified spontaneous emission, is caused by an enhanced absorption for parallel polarized optical pum**. Measured Stokes parameters of the nanowire emission reveal that due to the onset of lasing the degree of polarization rapidly increases from approximately 15% to 85%. Both, Stokes parameters and degree of polarization of the nanowire lasing emission are independent of the excitation polarization. The transversal lasing mode is therefore not notably affected by the polarization of the pum** beam, although the supply with optical gain is significantly enhanced for an excitation polarization parallel to the nanowire axis. △ Less

Submitted 31 March, 2015; v1 submitted 24 July, 2014; originally announced July 2014.

Journal ref: J. Phys. D: Appl. Phys. 47 (2014) 394012