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Discovery of interlayer plasmon polaron in graphene/WS$_2$ heterostructures
Authors:
Søren Ulstrup,
Yann in 't Veld,
Jill A. Miwa,
Alfred J. H. Jones,
Kathleen M. McCreary,
Jeremy T. Robinson,
Berend T. Jonker,
Simranjeet Singh,
Roland J. Koch,
Eli Rotenberg,
Aaron Bostwick,
Chris Jozwiak,
Malte Rösner,
Jyoti Katoch
Abstract:
Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge tran…
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Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge transport, surface reactivity, thermoelectric and optical properties, as observed in a variety of crystals and interfaces composed of polar materials [2-6]. Similarly, when oscillations of the charge density couple to conduction electrons the more elusive plasmon polaron emerges [7], which has been detected in electron-doped semiconductors [8-10]. However, the exploration of polaronic effects on low energy excitations is still in its infancy in two-dimensional (2D) materials. Here, we present the discovery of an interlayer plasmon polaron in heterostructures composed of graphene on top of SL WS$_2$. By using micro-focused angle-resolved photoemission spectroscopy (microARPES) during in situ do** of the top graphene layer, we observe a strong quasiparticle peak accompanied by several carrier density-dependent shake-off replicas around the SL WS$_2$ conduction band minimum (CBM). Our results are explained by an effective many-body model in terms of a coupling between SL WS$_2$ conduction electrons and graphene plasmon modes. It is important to take into account the presence of such interlayer collective modes, as they have profound consequences for the electronic and optical properties of heterostructures that are routinely explored in many device architectures involving 2D transition metal dichalcogenides (TMDs) [11-15].
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Submitted 31 August, 2023;
originally announced August 2023.
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Spintronic Quantum Phase Transition in a $Graphene/Pb_{0.24}Sn_{0.76}Te$ Heterostructure with Giant Rashba Spin-Orbit Coupling
Authors:
Jennifer E. DeMell,
Ivan Naumov,
Gregory M. Stephen,
Nicholas A. Blumenschein,
Y. -J. Leo Sun,
Adrian Fedorko,
Jeremy T. Robinson,
Paul M. Campbell,
Patrick J. Taylor,
Don Heiman,
Pratibha Dev,
Aubrey T. Hanbicki,
Adam L. Friedman
Abstract:
Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.76Te and graphene due to contact of a polar with a nonpolar surface and the resulting changes in electronic structure needed to avoid polar catastrophe…
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Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.76Te and graphene due to contact of a polar with a nonpolar surface and the resulting changes in electronic structure needed to avoid polar catastrophe. We study the spintronic properties of this heterostructure with non-local spin valve devices. We observe spin-momentum locking at lower temperatures that transitions to regular spin channel transport only at ~40 K. Hanle spin precession measurements show a spin relaxation time as high as 2.18 ns. Density functional theory calculations confirm that the spin-momentum locking is due to a giant Rashba effect in the material and that the phase transition is a Lifshitz transition. The theoretically predicted Lifshitz transition is further evident in the phase transition-like behavior in the Landé g-factor and spin relaxation time.
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Submitted 24 July, 2023;
originally announced July 2023.
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Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe
Authors:
Gregory M. Stephen,
Ivan Naumov,
Nicholas A. Blumenschein,
Yi-Jan Leo Sun,
Jennifer E. DeMell,
Sharmila Shirodkar,
Pratibha Dev,
Patrick J. Taylor,
Jeremy T. Robinson,
Paul M. Campbell,
Aubrey T. Hanbicki,
Adam L. Friedman
Abstract:
While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.7…
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While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20,000 cm2/Vs and a magnetoresistance approaching 100 percent, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/non-polar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of remarkable behaviors in these novel materials.
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Submitted 17 October, 2022; v1 submitted 27 July, 2022;
originally announced July 2022.
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Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from nanoARPES
Authors:
Alfred J. H. Jones,
Ryan Muzzio,
Paulina Majchrzak,
Sahar Pakdel,
Davide Curcio,
Klara Volckaert,
Deepnarayan Biswas,
Jacob Gobbo,
Simranjeet Singh,
Jeremy T. Robinson,
Kenji Watanabe,
Takashi Taniguchi,
Timur K. Kim,
Cephise Cacho,
Nicola Lanata,
Jill A. Miwa,
Philip Hofmann,
Jyoti Katoch,
Søren Ulstrup
Abstract:
The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi ener…
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The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{\circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The do** dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and do** where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene.
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Submitted 1 June, 2020;
originally announced June 2020.
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Unexpected Near-Infrared to Visible Non-linear Optical Properties from Two-Dimensional Polar Metals
Authors:
Megan A. Steves,
Yuanxi Wang,
Natalie Briggs,
Tian Zhao,
Hesham El-Sherif,
Brian Bersch,
Shruti Subramanian,
Chengye Dong,
Timothy Bowen,
Ana De La Fuente Duran,
Katharina Nisi,
Margaux Lassaunière,
Ursula Wurstbauer,
Nabil Bassim,
Jose J. Fonseca,
Jeremy T. Robinson,
Vincent Crespi,
Joshua Robinson,
Kenneth L. Knappenberger Jr
Abstract:
Near-infrared-to-visible second harmonic generation from air-stable two-dimensional polar gallium and indium metals is described. The photonic properties of 2D metals - including the largest second-order susceptibilities reported for metals (approaching 10nm$^2$/V) - are determined by the atomic-level structure and bonding of two-to-three-atom-thick crystalline films. The bond character evolved fr…
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Near-infrared-to-visible second harmonic generation from air-stable two-dimensional polar gallium and indium metals is described. The photonic properties of 2D metals - including the largest second-order susceptibilities reported for metals (approaching 10nm$^2$/V) - are determined by the atomic-level structure and bonding of two-to-three-atom-thick crystalline films. The bond character evolved from covalent to metallic over a few atomic layers, changing the out-of-plane metal-metal bond distances by approximately ten percent (0.2 $\unicode{x212B}$), resulting in symmetry breaking and an axial electrostatic dipole that mediated the large nonlinear response. Two different orientations of the crystalline metal atoms, corresponding to lateral displacements < 2 $\unicode{x212B}$, persisted in separate micron-scale terraces to generate distinct harmonic polarizations. This strong atomic-level structure-property interplay suggests metal photonic properties can be controlled with atomic precision.
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Submitted 24 August, 2020; v1 submitted 3 April, 2020;
originally announced April 2020.
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Enabling remote quantum emission in 2D semiconductors via porous metallic networks
Authors:
Jose J. Fonseca,
Andrew L. Yeats,
Brandon Blue,
Maxim Zalalutdinov,
Todd Brintlinger,
Blake S. Simpkins,
Daniel C. Ratchford,
James C. Culbertson,
Joel Q. Grim,
Samuel G. Carter,
Masa Ishigami,
Rhonda M. Stroud,
Cory Cress,
Jeremy T. Robinson
Abstract:
The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in…
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The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a 'reverse epitaxial' process where initially nanocrystalline Au films become highly textured and in close crystallographic registry to the 2D crystal overlayer. With continued annealing, the metal underlayer dewets to form an oriented pore enabled network (OPEN) film in which the 2DC overlayer remains suspended above or coats the inside of the metal pores. This OPEN film geometry supports SPPs launched by either direct laser excitation or by light emitted from the TMD semiconductor itself, where energy in-coupling and out-coupling occurs at the metal pore sites such that dielectric spacers between the metal and 2DC layer are unnecessary. At low temperatures a high density of single-photon emitters (SPEs) is present across an OPEN-WSe2 film, and we demonstrate non-local excitation of SPEs at a distance of 17 μm with minimal loss of photon purity. Our results suggest the OPEN film geometry is a versatile platform that could facilitate the use of layered materials in quantum optics systems.
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Submitted 16 December, 2019;
originally announced December 2019.
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Prominent room temperature valley polarization in WS2/graphene heterostructures grown by chemical vapor deposition
Authors:
Ioannis Paradisanos,
Kathleen M. McCreary,
Davoud Adinehloo,
Leonidas Mouchliadis,
Jeremy T. Robinson,
Hsun-Jen Chuang,
Aubrey T. Hanbicki,
Vasili Perebeinos,
Berend T. Jonker,
Emmanuel Stratakis,
George Kioseoglou
Abstract:
We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature depe…
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We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature dependent depolarization (i.e. decrease of polarization with increasing temperature), with polarization degrees reaching 24% at room temperature under near-resonant excitation. This contrasts to hBN- encapsulated WS2, which exhibits a room temperature polarization degree of only 11%. The observed low depolarization rate in WS2/Gr heterostructure is attributed to the nearly temperature independent scattering rate due to phonons and fast charge and energy transfer processes from WS2 to graphene. Significant variations in the degree of polarization are also observed at 4K between the different heterostructure configurations. Intervalley hole scattering in the valence band proximity between the K and Γ points of WS2 is sensitive to the immediate environment, leading to the observed variations.
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Submitted 1 December, 2020; v1 submitted 11 October, 2019;
originally announced October 2019.
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Direct observation of minibands in twisted heterobilayers
Authors:
Søren Ulstrup,
Roland J. Koch,
Simranjeet Singh,
Kathleen M. McCreary,
Berend T. Jonker,
Jeremy T. Robinson,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Jyoti Katoch,
Jill A. Miwa
Abstract:
Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed…
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Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, have remained elusive and no such features have been reported for heterobilayers comprised of a TMD and another type of 2D material. Here, we introduce a new X-ray capillary technology for performing micro-focused angle-resolved photoemission spectroscopy (microARPES) with a spatial resolution on the order of 1 $μ$m, enabling us to map the momentum-dependent quasiparticle dispersion of heterobilayers consisting of graphene on WS$_2$ at variable interlayer twist angles ($θ$). Minibands are directly observed for $θ= 2.5^{\circ}$ in multiple mini Brillouin zones (mBZs), while they are absent for a larger twist angle of $θ= 26.3^{\circ}$. These findings underline the possibility to control quantum states via the stacking configuration in 2D heterostructures, opening multiple new avenues for generating materials with enhanced functionality such as tunable electronic correlations [11] and tailored selection rules for optical transitions [12].
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Submitted 14 April, 2019;
originally announced April 2019.
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Oxygen-induced in-situ manipulation of the interlayer coupling and exciton recombination in Bi2Se3/MoS2 2D heterostructures
Authors:
Zachariah Hennighausen,
Christopher Lane,
Abdelkrim Benabbas,
Kevin Mendez,
Monika Eggenberger,
Paul M. Champion,
Jeremy T. Robinson,
Arun Bansil,
Swastik Kar
Abstract:
2D heterostructures are more than a sum of the parent 2D materials, but are also a product of the interlayer coupling, which can induce new properties. In this paper we present a method to tune the interlayer coupling in Bi2Se3/MoS2 2D heterostructures by regulating the oxygen presence in the atmosphere, while applying laser or thermal energy. Our data suggests the interlayer coupling is tuned thr…
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2D heterostructures are more than a sum of the parent 2D materials, but are also a product of the interlayer coupling, which can induce new properties. In this paper we present a method to tune the interlayer coupling in Bi2Se3/MoS2 2D heterostructures by regulating the oxygen presence in the atmosphere, while applying laser or thermal energy. Our data suggests the interlayer coupling is tuned through the diffusive intercalation and de-intercalation of oxygen molecules. When one layer of Bi2Se3 is grown on monolayer MoS2, an influential interlayer coupling is formed that quenches the signature photoluminescence (PL) peaks. However, thermally annealing in the presence of oxygen disrupts the interlayer coupling, facilitating the emergence of the MoS2 PL peak. DFT calculations predict intercalated oxygen increases the interlayer separation ~17%, disrupting the interlayer coupling and inducing the layers to behave more electronically independent. The interlayer coupling can then be restored by thermally annealing in N2 or Ar, where the peaks will re-quench. Hence, this is an interesting oxygen-induced switching between "non-radiative" and "radiative" exciton recombination. This switching can also be accomplished locally, controllably, and reversibly using a low-power focused laser, while changing the environment from pure N2 to air. This allows for the interlayer coupling to be precisely manipulated with submicron spatial resolution, facilitating site-programmable 2D light-emitting pixels whose emission intensity could be precisely varied by a factor exceeding 200x. Our results show that these atomically-thin 2D heterostructures may be excellent candidates for oxygen sensing.
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Submitted 4 January, 2019;
originally announced January 2019.
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Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene
Authors:
A. Nath,
M. Currie,
V. D. Wheeler,
M. J. Tadjer,
A. D. Koehler,
Z. R. Robinson,
K. Sridhara,
S. C. Hernandez,
J. A. Wollmershauser,
J. T Robinson,
R. L. Myers-Ward,
C. R. Eddy, Jr.,
M. V. Rao,
D. K. Gaskill
Abstract:
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist resid…
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Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled do** and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit.
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Submitted 19 November, 2014;
originally announced November 2014.
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Ultrafast THz Faraday Rotation in Graphene
Authors:
J. N. Heyman,
R. F. Foo Kune,
B. A. Alebachew,
M. D. Nguyen,
J. T. Robinson
Abstract:
Terahertz (THz) Faraday rotation measurements were performed to investigate carrier dynamics in p-type CVD graphene. We used static and time-resolved polarization-sensitive THz transmission measurements in a magnetic field to probe free carriers in GaAs, InP and Graphene. Static measurements probe the equilibrium carrier density and momentum scattering rate. Time-resolved (optical pump/THz probe)…
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Terahertz (THz) Faraday rotation measurements were performed to investigate carrier dynamics in p-type CVD graphene. We used static and time-resolved polarization-sensitive THz transmission measurements in a magnetic field to probe free carriers in GaAs, InP and Graphene. Static measurements probe the equilibrium carrier density and momentum scattering rate. Time-resolved (optical pump/THz probe) measurements probe the change in these quantities following photoexcitation. In a typical CVD graphene sample we found that 0.5ps following photoexcitation with 1*10^13 photons/cm2 pulses at 800nm the effective hole scattering time decreased from 37fs to 34.5fs, while the carrier concentration increased from 2.0*10^12/cm2 to 2.04*10^12/cm2, leading to a transient decrease in the conductivity of the film.
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Submitted 27 October, 2014;
originally announced October 2014.
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Carrier Heating and Negative Photoconductivity in Graphene
Authors:
J. N. Heyman,
J. D. Stein,
Z. S. Kaminski,
A. R. Banman,
A. M. Massari,
J. T. Robinson
Abstract:
We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz photoconductivity measurements using a tunable mid-infrared pump probed these samples at photon energies between 0.35eV to 1.55eV, approximately one half to thr…
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We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz photoconductivity measurements using a tunable mid-infrared pump probed these samples at photon energies between 0.35eV to 1.55eV, approximately one half to three times the Fermi energy of the samples. Although interband optical transitions in graphene are blocked for pump photon energies less than twice the Fermi energy, we observe negative photoconductivity at all pump photon energies investigated, indicating that interband excitation is not required to observe this effect. Our results are consistent with a thermalized free carrier population that cools by electron-phonon scattering, but inconsistent with models of negative photoconductivity based on population inversion.
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Submitted 27 October, 2014;
originally announced October 2014.
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Electronic Hybridization of Large-Area Stacked Graphene Films
Authors:
Jeremy T. Robinson,
Scott W. Schmucker,
C. Bogdan Diaconescu,
James P. Long,
James C. Culbertson,
Taisuke Ohta,
Adam L. Friedman,
Thomas E. Beechem
Abstract:
Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and characterization of large-area (> cm^2), coupled bilayer graphene on SiO2/Si substrates. Stacking two graphene films leads to direct electronic intera…
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Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and characterization of large-area (> cm^2), coupled bilayer graphene on SiO2/Si substrates. Stacking two graphene films leads to direct electronic interactions between layers, where the resulting film properties are determined by the local twist angle. Polycrystalline bilayer films have a "stained-glass window" appearance explained by the emergence of a narrow absorption band in the visible spectrum that depends on twist angle. Direct measurement of layer orientation via electron diffraction, together with Raman and optical spectroscopy, confirms the persistence of clean interfaces over large areas. Finally, we demonstrate that interlayer coupling can be reversibly turned off through chemical modification, enabling optical-based chemical detection schemes. Together, these results suggest that individual 2D crystals can be individually assembled to form electronically coupled systems suitable for large-scale applications.
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Submitted 2 January, 2013;
originally announced January 2013.
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Low-energy Electron Reflectivity from Graphene
Authors:
R. M. Feenstra,
N. Srivastava,
Qin Gao,
M. Widom,
Bogdan Diaconescu,
Taisuke Ohta,
G. L. Kellogg,
J. T. Robinson,
I. V. Vlassiouk
Abstract:
Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy range of 0 - 8 eV are found, with the number of minima depending on the number of graphene layers. Using first-principles computations, it is demonstrated that a free standing n-layer graphene slab produces n-1 reflecti…
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Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy range of 0 - 8 eV are found, with the number of minima depending on the number of graphene layers. Using first-principles computations, it is demonstrated that a free standing n-layer graphene slab produces n-1 reflectivity minima. This same result is also found experimentally for graphene supported on SiO2. For graphene bonded onto other substrates it is argued that a similar series of reflectivity minima is expected, although in certain cases an additional minimum occurs, at an energy that depends on the graphene-substrate separation and the effective potential in that space.
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Submitted 31 January, 2013; v1 submitted 28 November, 2012;
originally announced November 2012.
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Graphene-Wrapped Sulfur Particles as a Rechargeable Lithium-Sulfur-Battery Cathode Material with High Capacity and Cycling Stability
Authors:
Hailiang Wang,
Yuan Yang,
Yongye Liang,
Joshua Tucker Robinson,
Yanguang Li,
Ariel Jackson,
Yi Cui,
Hongjie Dai
Abstract:
We report the synthesis of a graphene-sulfur composite material by wrap** polyethyleneglycol (PEG) coated submicron sulfur particles with mildly oxidized graphene oxide sheets decorated by carbon black nanoparticles. The PEG and graphene coating layers are important to accommodating volume expansion of the coated sulfur particles during discharge, trap** soluble polysulfide intermediates and r…
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We report the synthesis of a graphene-sulfur composite material by wrap** polyethyleneglycol (PEG) coated submicron sulfur particles with mildly oxidized graphene oxide sheets decorated by carbon black nanoparticles. The PEG and graphene coating layers are important to accommodating volume expansion of the coated sulfur particles during discharge, trap** soluble polysulfide intermediates and rendering the sulfur particles electrically conducting. The resulting graphene-sulfur composite showed high and stable specific capacities up to ~600mAh/g over more than 100 cycles, representing a promising cathode material for rechargeable lithium batteries with high energy density.
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Submitted 1 July, 2011;
originally announced July 2011.
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Low Energy Electron Point Projection Microscopy of Suspended Graphene, the Ultimate "Microscope Slide"
Authors:
J. Y. Mutus,
L. Livadaru,
J. T. Robinson,
R. Urban,
M. H. Salomons,
M. Cloutier,
P. E. Sheehan,
R. A. Wolkow
Abstract:
Point Projection Microscopy (PPM) is used to image suspended graphene using low-energy electrons (100-200eV). Because of the low energies used, the graphene is neither damaged or contaminated by the electron beam. The transparency of graphene is measured to be 74%, equivalent to electron transmission through a sheet as thick as twice the covalent radius of sp^2-bonded carbon. Also observed is ripp…
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Point Projection Microscopy (PPM) is used to image suspended graphene using low-energy electrons (100-200eV). Because of the low energies used, the graphene is neither damaged or contaminated by the electron beam. The transparency of graphene is measured to be 74%, equivalent to electron transmission through a sheet as thick as twice the covalent radius of sp^2-bonded carbon. Also observed is rippling in the structure of the suspended graphene, with a wavelength of approximately 26 nm. The interference of the electron beam due to the diffraction off the edge of a graphene knife edge is observed and used to calculate a virtual source size of 4.7 +/- 0.6 Angstroms for the electron emitter. It is demonstrated that graphene can be used as both anode and substrate in PPM in order to avoid distortions due to strong field gradients around nano-scale objects. Graphene can be used to image objects suspended on the sheet using PPM, and in the future, electron holography.
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Submitted 15 February, 2011; v1 submitted 8 February, 2011;
originally announced February 2011.
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Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils
Authors:
Grant Buchowicz,
Peter R. Stone,
Jeremy T. Robinson,
Cory D. Cress,
Jeffrey W. Beeman,
Oscar D. Dubon
Abstract:
Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging from 10^12 cm^-2 to 10^15 cm^-2 indicate that the structure of graphene evolves from a highly ordered layer, to a patchwork of disordered domains, to an essent…
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Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging from 10^12 cm^-2 to 10^15 cm^-2 indicate that the structure of graphene evolves from a highly ordered layer, to a patchwork of disordered domains, to an essentially amorphous film. These structural changes result in a dramatic decrease in the Hall mobility by orders of magnitude while, remarkably, the Hall concentration remains almost unchanged, suggesting that the Fermi level is pinned at a hole concentration near 1x10^13 cm^-2. A model for scattering by resonant scatterers is in good agreement with mobility measurements up to an ion fluence of 1x10^14 cm^-2.
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Submitted 18 December, 2010;
originally announced December 2010.
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Mn3O4-Graphene Hybrid as a High Capacity Anode Material for Lithium Ion Batteries
Authors:
Hailiang Wang,
Li-Feng Cui,
Yuan Yang,
Hernan Sanchez Casalongue,
Joshua Tucker Robinson,
Yongye Liang,
Yi Cui,
Hongjie Dai
Abstract:
We developed two-step solution-phase reactions to form hybrid materials of Mn3O4 nanoparticles on reduced graphene oxide (RGO) sheets for lithium ion battery applications. Mn3O4 nanoparticles grown selectively on RGO sheets over free particle growth in solution allowed for the electrically insulating Mn3O4 nanoparticles wired up to a current collector through the underlying conducting graphene net…
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We developed two-step solution-phase reactions to form hybrid materials of Mn3O4 nanoparticles on reduced graphene oxide (RGO) sheets for lithium ion battery applications. Mn3O4 nanoparticles grown selectively on RGO sheets over free particle growth in solution allowed for the electrically insulating Mn3O4 nanoparticles wired up to a current collector through the underlying conducting graphene network. The Mn3O4 nanoparticles formed on RGO show a high specific capacity up to ~900mAh/g near its theoretical capacity with good rate capability and cycling stability, owing to the intimate interactions between the graphene substrates and the Mn3O4 nanoparticles grown atop. The Mn3O4/RGO hybrid could be a promising candidate material for high-capacity, low-cost, and environmentally friendly anode for lithium ion batteries. Our growth-on-graphene approach should offer a new technique for design and synthesis of battery electrodes based on highly insulating materials.
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Submitted 20 September, 2010;
originally announced September 2010.
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Nanocrystal Growth on Graphene with Various Degrees of Oxidation
Authors:
Hailiang Wang,
Joshua Tucker Robinson,
Georgi Diankov,
Hongjie Dai*
Abstract:
We show a general two-step method to grow hydroxide and oxide nanocrystals of the iron family elements (Ni, Co, Fe) on graphene with two degrees of oxidation. Drastically different nanocrystal growth behaviors were observed on low-oxidation graphene sheets (GS) and highly oxidized graphite oxide (GO) in hydrothermal reactions. Small particles pre-coated on GS with few oxygen-containing surface g…
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We show a general two-step method to grow hydroxide and oxide nanocrystals of the iron family elements (Ni, Co, Fe) on graphene with two degrees of oxidation. Drastically different nanocrystal growth behaviors were observed on low-oxidation graphene sheets (GS) and highly oxidized graphite oxide (GO) in hydrothermal reactions. Small particles pre-coated on GS with few oxygen-containing surface groups diffused and recrystallized into single-crystalline nickel hydroxide Ni(OH)2 hexagonal nanoplates or iron oxide Fe2O3 nanorods with well defined morphologies. In contrast, particles pre-coated on GO were pinned by the high-concentration oxygen groups and defects on GO without recrystallization into well-defined shapes. Adjusting reaction temperature can be combined to further control materials grown on graphene. For materials with weak interactions with graphene, increasing the reaction temperature can lead to diffusion and recrystallization of surface species into larger crystals even on highly oxidized and defective GO. Our results suggest an interesting new approach to controlling the morphology of nanomaterials grown on graphene by tuning the surface chemistry of graphene as substrates for crystal nucleation and growth.
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Submitted 18 February, 2010;
originally announced February 2010.
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Simultaneous Nitrogen-Do** and Reduction of Graphene Oxide
Authors:
Xiaolin Li,
Hailiang Wang,
Joshua T. Robinson,
Hernan Sanchez,
Georgi Diankov,
Hongjie Dai
Abstract:
We develop a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction temperatures reveals that N-do** occurs at a temperature as low as 300C, while the highest do** level of ~5% N is achieved at 500C. N-do** is accompanie…
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We develop a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction temperatures reveals that N-do** occurs at a temperature as low as 300C, while the highest do** level of ~5% N is achieved at 500C. N-do** is accompanied by the reduction of GO with decreases in oxygen levels from ~28% in as-made GO down to ~2% in 1100C NH3 reacted GO. XPS analysis of the N binding configurations of doped GO finds pyridinic N in the doped samples, with increased quaternary N (N that replaced the carbon atoms in the graphene plane) in GO annealed at higher temperatures (>900C). Oxygen groups in GO were found responsible for reactions with NH3 and C-N bond formation. Pre-reduced GO with fewer oxygen groups by thermal annealing in H2 exhibits greatly reduced reactivity with NH3 and lower N-do** level. Electrical measurements of individual GO sheet devices demonstrate that GO annealed in NH3 exhibits higher conductivity than those annealed in H2, suggesting more effective reduction of GO by annealing in NH3 than in H2, consistent with XPS data. The N-doped reduced GO shows clearly n-type electron do** behavior with Dirac point (DP) at negative gate voltages in three terminal devices. Our method could lead to the synthesis of bulk amounts of N-doped, reduced GO sheets useful for various practical applications.
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Submitted 5 October, 2009;
originally announced October 2009.
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Instability of two dimensional graphene: Breaking sp2 bonds with soft X-rays
Authors:
S. Y. Zhou,
C. O. Girit,
A. Scholl,
C. J. Jozwiak,
D. A. Siegel,
P. Yu,
J. T. Robinson,
F. Wang,
A. Zettl,
A. Lanzara
Abstract:
We study the stability of various kinds of graphene samples under soft X-ray irradiation. Our results show that in single layer exfoliated graphene (a closer analogue to two dimensional material), the in-plane carbon-carbon bonds are unstable under X-ray irradiation, resulting in nanocrystalline structures. As the interaction along the third dimension increases by increasing the number of graphe…
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We study the stability of various kinds of graphene samples under soft X-ray irradiation. Our results show that in single layer exfoliated graphene (a closer analogue to two dimensional material), the in-plane carbon-carbon bonds are unstable under X-ray irradiation, resulting in nanocrystalline structures. As the interaction along the third dimension increases by increasing the number of graphene layers or through the interaction with the substrate (epitaxial graphene), the effect of X-ray irradiation decreases and eventually becomes negligible for graphite and epitaxial graphene. Our results demonstrate the importance of the interaction along the third dimension in stabilizing the long range in-plane carbon-carbon bonding, and suggest the possibility of using X-ray to pattern graphene nanostructures in exfoliated graphene.
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Submitted 21 September, 2009;
originally announced September 2009.
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Solvothermal Reduction of Chemically Exfoliated Graphene Sheets
Authors:
Hailiang Wang,
Joshua Tucker Robinson,
Xiaolin Li,
Hongjie Dai
Abstract:
Graphene has attracted much attention due to its interesting properties and potential applications. Chemical exfoliation methods have been developed to make graphene recently, aimed at large-scale assembly and applications such as composites and Li ion batteries. Although efficient, the chemical exfoliation methods involve oxidation of graphene and introduce defects in the as-made sheets. Hydraz…
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Graphene has attracted much attention due to its interesting properties and potential applications. Chemical exfoliation methods have been developed to make graphene recently, aimed at large-scale assembly and applications such as composites and Li ion batteries. Although efficient, the chemical exfoliation methods involve oxidation of graphene and introduce defects in the as-made sheets. Hydrazine reduction at 100 has shown to partially restore the structure and conductance of graphite oxide. However, the reduced GO still shows strong defect peaks in Raman spectra with higher resistivity than pristine graphene by 2 to 3 orders of magnitude. It is important to produce much less defective graphene sheets than GO, and develop more effective graphene reduction. Recently, we reported a mild exfoliation-reintercalation-expansion method to form high-quality GS with higher conductivity and lower oxidation degree than GO.5 Here, we present a 180 solvothermal reduction method for our GS and GO. The solvothermal reduction is more effective than the earlier reduction methods in lowering the oxygen and defect levels in GS, increasing the graphene domains, and bringing the conductivity of GS close to pristine graphene. The reduced GS possess the highest degree of pristinity among chemically derived graphene.
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Submitted 30 July, 2009;
originally announced July 2009.
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Nano-Graphene Oxide for Cellular Imaging and Drug Delivery
Authors:
Xiaoming Sun,
Zhuang Liu,
Kevin Welsher,
Joshua Tucker Robinson,
Andrew Goodwin,
Sasa Zaric,
Hongjie Dai
Abstract:
Two-dimensional graphene offers interesting electronic, thermal and mechanical properties that are currently explored for advanced electronics, membranes and composites. Here we synthesize and explore the biological application of nano-graphene oxide NGO, single-layer graphene oxide sheets down to a few nanometers in lateral width. We develop functionalization chemistry to impart solubility and…
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Two-dimensional graphene offers interesting electronic, thermal and mechanical properties that are currently explored for advanced electronics, membranes and composites. Here we synthesize and explore the biological application of nano-graphene oxide NGO, single-layer graphene oxide sheets down to a few nanometers in lateral width. We develop functionalization chemistry to impart solubility and compatibility of NGO in biological environments. We obtain size separated pegylated NGO sheets that are soluble in buffers and serum without agglomeration. The NGO sheets are found to be photoluminescent in the visible and infrared regions. The intrinsic photoluminescence of NGO is used for live cell imaging in the near-infrared with little background. We found that simple physisorption via pi-stacking can be used for loading doxorubicin, a widely used cancer drug onto NGO functionalized with antibody for selective cancer cell killing in vitro. Owing to the small size, intrinsic optical properties, large specific surface area,low cost, and useful non-covalent interactions with aromatic drug molecules, NGO is a promising new material for biological and medical applications.
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Submitted 25 August, 2008;
originally announced August 2008.
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PEGylated Nano-Graphene Oxide for Delivery of Water Insoluble Cancer Drugs
Authors:
Zhuang Liu,
Joshua T. Robinson,
Xiaoming Sun,
Hongjie Dai
Abstract:
It is known that many potent, often aromatic drugs are water insoluble, which has hampered their use for disease treatment. In this work, we functionalized nano-graphene oxide (NGO), a novel graphitic material, with branched polyethylene glycol (PEG) to obtain a biocompatible NGO-PEG conjugate stable in various biological solutions, and used them for attaching hydrophobic aromatic molecules incl…
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It is known that many potent, often aromatic drugs are water insoluble, which has hampered their use for disease treatment. In this work, we functionalized nano-graphene oxide (NGO), a novel graphitic material, with branched polyethylene glycol (PEG) to obtain a biocompatible NGO-PEG conjugate stable in various biological solutions, and used them for attaching hydrophobic aromatic molecules including a camptothecin (CPT) analog, SN38 non-covalently via pi-pi stacking. The resulting NGO-PEG-SN38 complex exhibited excellent water solubility while maintaining its high cancer cell killing potency similar to that of the free SN38 molecules in organic solvents. The efficacy of NGO-PEG-SN38 was far higher than that of irinotecan (CPT-11), a FDA approved water soluble SN38 prodrug used for the treatment of colon cancer. Our results showed that graphene is a novel class of material promising for biological applications including future in vivo cancer treatment with various aromatic, low-solubility drugs.
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Submitted 30 July, 2008;
originally announced July 2008.
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Chemical nanomachining of silicon by gold-catalyzed oxidation
Authors:
J. T. Robinson,
J. A. Liddle,
P. G. Evans,
O. D. Dubon
Abstract:
A chemical nanomachining process for the rapid, scalable production of nanostructure assemblies from silicon-on-insulator is demonstrated. The process is based on the spontaneous, local oxidation of Si induced by Au, which is selectively evaporated onto the Si surface. The Au-catalyzed oxide forms a pattern that serves as a robust mask for the underlying Si, enabling the use of simple wet chemis…
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A chemical nanomachining process for the rapid, scalable production of nanostructure assemblies from silicon-on-insulator is demonstrated. The process is based on the spontaneous, local oxidation of Si induced by Au, which is selectively evaporated onto the Si surface. The Au-catalyzed oxide forms a pattern that serves as a robust mask for the underlying Si, enabling the use of simple wet chemistry to sculpt arrays of nanostructures of diverse shapes including rings, pillars, wires, and nanopores. The remarkable simplicity of this chemical nanomachining process makes it widely accessible as an enabling technique for applications from photonics to biotechnology.
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Submitted 23 July, 2007;
originally announced July 2007.
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Sculpting the shape of semiconductor heteroepitaxial islands: from dots to rods
Authors:
J. T. Robinson,
D. A. Walko,
D. A. Arms,
D. S. Tinberg,
P. G. Evans,
Y. Cao,
J. A. Liddle,
A. Rastelli,
O. G. Schmidt,
O. D. Dubon
Abstract:
In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations w…
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In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.
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Submitted 31 January, 2007;
originally announced February 2007.
