Showing 1–50 of 250 results for author: Ritchie, D A

Statistical study and parallelisation of multiplexed single-electron sources

Authors: S. Norimoto, P. See, N. Schoinas, I. Rungger, T. O. Boykin II, M. D. Stewart Jr, J. P. Griffiths, C. Chen, D. A. Ritchie, M. Kataoka

Abstract: Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a… ▽ More Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Comments: 5 pages, 3 figures

Landau Level Single-Electron Pum**

Authors: E. Pyurbeeva, M. D. Blumenthal, J. A. Mol, H. Howe, H. E. Beere, T. Mitchell, D. A. Ritchie, M. Pepper

Abstract: We present the first detailed study of the effect of a strong magnetic field on single-electron pum** in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pum** from Landau levels in the leads, where the measurements exhibit pronounced oscillations in the lengths of the pum** plateaus with the magnetic field, reminiscent of Shubnik… ▽ More We present the first detailed study of the effect of a strong magnetic field on single-electron pum** in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pum** from Landau levels in the leads, where the measurements exhibit pronounced oscillations in the lengths of the pum** plateaus with the magnetic field, reminiscent of Shubnikov-de Haas oscillations. This similarity indicates that the pum** process is dependent on the density of states of the 2D electron gas over a narrow energy window. Based on these observations, we develop a new theoretical description of the operation of single-electron pumps which for the first time allows for the determination of the physical parameters of the experiment; such as the capture energy of the electrons, the broadening of the quantised Landau levels in the leads, and the quantum lifetime of the electrons. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Comments: 8 pages, 4 figures

Photon emission by hot electron injection across a lateral \textit{pn} junction

Authors: S. Norimoto, R. Saxena, P. See, A. Nasir, J. P. Griffiths, C. Chen, D. A. Ritchie, M. Kataoka

Abstract: We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is crea… ▽ More We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: 8 pages, 4 figures

Fast characterization of multiplexed single-electron pumps with machine learning

Authors: N. Schoinas, Y. Rath, S. Norimoto, W. Xie, P. See, J. P. Griffiths, C. Chen, D. A. Ritchie, M. Kataoka, A. Rossi, I. Rungger

Abstract: We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease… ▽ More We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Comments: 6 pages, 3 figures

Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing

Authors: Pengcheng Ma, Kaveh Delfanazari, Reuben K. Puddy, Jiahui Li, Moda Cao, Teng Yi, Jonathan P. Griffiths, Harvey E. Beere, David A. Ritchie, Michael J. Kelly, Charles G. Smith

Abstract: The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and… ▽ More The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas

Authors: Daisy Q. Wang, Zeb Krix, Oleg P. Sushkov, Ian Farrer, David A. Ritchie, Alexander R. Hamilton, Oleh Klochan

Abstract: In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties differen… ▽ More In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties. △ Less

Submitted 11 March, 2024; originally announced March 2024.

Comments: 19 pages, 6 figures

Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy

Authors: Bikash C. Barik, Himadri Chakraborti, Aditya K. Jain, Buddhadeb Pal, H. E. Beere, D. A. Ritchie, K. Das Gupta

Abstract: A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance… ▽ More A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance of a two-amplifier cross-correlation technique for semiconductors and thin films commonly encountered. We show that by using home-built amplifiers costing less than $10$ USD/piece one can measure spectral densities as low as $\sim 10^{-18}-10^{-19}~ {\rm {V^2}{Hz^{-1}}}$. We apply this method to an ionic liquid gated Ga:ZnO channel and show that the glass transition of the ionic liquid brings about a change in the exponent of the low frequency resistance fluctuations. Our analysis suggests that a log-normal distribution of the Debye relaxation times of the fluctuations and an increased weight of the long timescale relaxations can give a semi-quantitative explanation of the observed change in the exponent. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Comments: 6 pages, 5 figures, supplementary material attached. Comments are welcome

Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells

Authors: Daisy Q. Wang, Zeb Krix, Olga A. Tkachenko, Vitaly A. Tkachenko, Chong Chen, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton, Oleh Klochan

Abstract: The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w… ▽ More The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hop** that drive collective phenomena in real crystals. Solid state approaches support long range hop** and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Comments: 30 pages, 11 figures

Achieving 100% amplitude modulation depth in a graphene-based tuneable capacitance metamaterial

Authors: Ruqiao Xia, Nikita W. Almond, Stephen J. Kindness, Sergey A. Mikhailov, Wadood Tadbier, Riccardo Degl'Innocenti, Yuezhen Lu, Abbie Lowe, Ben Ramsay, Lukas A. Jakob, James Dann, Stephan Hofmann, Harvey E. Beere, David A. Ritchie, Wladislaw Michailow

Abstract: Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly… ▽ More Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly effective solution for THz modulation. However, whilst the graphene conductivity can be tuned over a wide range, it cannot be reduced to zero due to the gapless nature of graphene, which directly limits the maximum achievable modulation depth for single-layer metamaterial modulators. Here, we demonstrate two novel solutions to circumvent this restriction: Firstly, we excite the modulator from the back of the substrate, and secondly, we incorporate air gaps into the graphene patches. This results in a ground-breaking graphene-metal metamaterial terahertz modulator, operating at 2.0-2.5 THz, which demonstrates a 99.01 % amplitude and a 99.99 % intensity modulation depth at 2.15 THz, with a reconfiguration speed in excess of 3 MHz. Our results open up new frontiers in the area of terahertz technology. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Comments: 16 pages, 5 figures

Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems

Authors: Kaveh Delfanazari, Jiahui Li, Yusheng Xiong, Pengcheng Ma, Reuben K. Puddy, Teng Yi, Ian Farrer, Sachio Komori, Jason W. A. Robinson, Llorenc Serra, David A. Ritchie, Michael J. Kelly, Hannah J. Joyce, Charles G. Smith

Abstract: Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a C… ▽ More Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a Cooper pairs QPC analogue known as superconducting quantum point contact (SQPC). The technological development of such quantum devices has been prolonged due to the challenges of maintaining their geometrical requirement and near-unity superconductor-semiconductor interface transparency. Here, we develop advanced nanofabrication, material and device engineering techniques and report on an innovative realisation of nanoscale SQPC arrays with split gate technology in semiconducting 2D electron systems, exploiting the special gate tunability of the quantum wells, and report the first experimental observation of conductance quantization in hybrid InGaAs-Nb SQPCs. We observe reproducible quantized conductance at zero magnetic fields in multiple quantum nanodevices fabricated in a single chip and systematically investigate the quantum transport of SQPCs at low and high magnetic fields for their potential applications in quantum metrology, for extremely accurate voltage standards, and fault-tolerant quantum technologies. △ Less

Submitted 18 December, 2023; originally announced December 2023.

Probing Fermi surface parity with spin resolved transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, S. Bladwell, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, O. P. Sushkov, A. R. Hamilton

Abstract: Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k… ▽ More Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k $\neq$ -k). Here, we show that transverse magnetic focussing can be used to detect such changes, because focussing only measures a well defined section of the Fermi surface and does not average over +k and -k. Furthermore, our results show that focussing is an order of magnitude more sensitive to changes in the Fermi surface than other 2D techniques, and could be used to investigate similar Fermi surface changes in other 2D systems. △ Less

Submitted 7 March, 2024; v1 submitted 6 October, 2023; originally announced October 2023.

Exciton-polaritons in GaAsbased slab waveguide photonic crystals

Authors: C. E. Whittaker, T. Isoniemi, S. Lovett, P. M. Walker, S. Kolodny, V. Kozin, I. V. Iorsh, I. Farrer, D. A. Ritchie, M. S. Skolnick, D. N. Krizhanovskii

Abstract: We report the observation of band gaps for low loss exciton-polaritons propagating outside the light cone in GaAs-based planar waveguides patterned into two-dimensional photonic crystals. By etching square lattice arrays of shallow holes into the uppermost layer of our structure, we open gaps on the order of 10 meV in the photonic mode dispersion, whose size and light-matter composition can be tun… ▽ More We report the observation of band gaps for low loss exciton-polaritons propagating outside the light cone in GaAs-based planar waveguides patterned into two-dimensional photonic crystals. By etching square lattice arrays of shallow holes into the uppermost layer of our structure, we open gaps on the order of 10 meV in the photonic mode dispersion, whose size and light-matter composition can be tuned by proximity to the strongly coupled exciton resonance. We demonstrate gaps ranging from almost fully photonic to highly excitonic. Opening a gap in the exciton-dominated part of the polariton spectrum is a promising first step towards the realization of quantum-Hall-like states arising from topologically nontrivial hybridization of excitons and photons. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Comments: published in Appl. Phys. Lett. in 2021

Journal ref: Appl. Phys. Lett. 119, 181101 (2021)

Large-scale on-chip integration of gate-voltage addressable hybrid superconductor-semiconductor quantum wells field effect nano-switch arrays

Authors: Kaveh Delfanazari, Jiahui Li, Peng Ma, Reuben K. Puddy, Teng Yi, Yusheng Xiong, Ian Farrer, Sachio Komori, Jason Robinson, David A. Ritchie, Michael J. Kelly, Hannah J. Joyce, Charles G. Smith

Abstract: Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on… ▽ More Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on 2D semiconducting electron systems. Here, we experimentally demonstrate a novel realisation of large-scale scalable, and gate voltage controllable hybrid field effect quantum chips. Each chip contains arrays of split gate field effect hybrid junctions, that work as conductance switches, and are made from In0.75Ga0.25As quantum wells integrated with Nb superconducting electronic circuits. Each hybrid junction in the chip can be controlled and addressed through its corresponding source-drain and two global split gate contact pads that allow switching between their (super)conducting and insulating states. We fabricate a total of 18 quantum chips with 144 field effect hybrid Nb- In0.75Ga0.25As 2DEG-Nb quantum wires and investigate the electrical response, switching voltage (on/off) statistics, quantum yield, and reproducibility of several devices at cryogenic temperatures. The proposed integrated quantum device architecture allows control of individual junctions in a large array on a chip useful for the development of emerging cryogenic nanoelectronics circuits and systems for their potential applications in fault-tolerant quantum technologies. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Identifying Many-Body Localization in Realistic Dot Arrays

Authors: Alexander Nico-Katz, Gulzat Jaliel, Paola Atkinson, Thomas A. Mitchell, David A. Ritchie, Charles G. Smith, Sougato Bose

Abstract: We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our exper… ▽ More We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our experimental system, we find that many-body localization can potentially be detected in current-generation quantum dot arrays. A pitfall that we identify is that the freezing of a system due to strong interactions yields signatures similar to conventional localization. We find that the most widely-used experimental signature of localization - the imbalance - is not sensitive to this fact, and may be unsuitable as the lone identifier of the many-body localized regime. △ Less

Submitted 19 January, 2023; originally announced January 2023.

Comments: 13 pages, 7 figures

Time-resolved Coulomb collision of single electrons

Authors: J. D. Fletcher, W. Park, S. Ryu, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, H. -S. Sim, M. Kataoka

Abstract: Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function… ▽ More Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we explore the Coulomb collision of two high energy electrons in counter-propagating ballistic edge states. We show that, in this kind of unscreened device, the partitioning probabilities at different electron arrival times and barrier height are shaped by Coulomb repulsion between the electrons. This prevents the wavepacket overlap required for the manifestation of fermionic exchange statistics but suggests a new class of devices for studying and manipulating interactions of ballistic single electrons. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally assoc… ▽ More In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally associated with a change in the spin polarisation. We instead show that in hole systems with a $k^3$ spin-orbit interaction, this peak suppression is due to a change in the scattering of one spin state, not a change in spin polarisation. We also show that the change in scattering length extracted from magnetic focussing is consistent with results obtained from measurements of Shubnikov-de Haas oscillations. This result suggests that scattering must be considered when relating focussing peak amplitude to spin polarisation in hole systems △ Less

Submitted 7 October, 2022; originally announced October 2022.

Coherent light scattering from a telecom C-band quantum dot

Authors: L. Wells, T. Müller, R. M. Stevenson, J. Skiba-Szymanska, D. A. Ritchie, A. J. Shields

Abstract: Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is fundamental for fibre-based network implementations, but Fourier-limited emission and subnatural linewidth photons have so far only been reported from systems operating… ▽ More Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is fundamental for fibre-based network implementations, but Fourier-limited emission and subnatural linewidth photons have so far only been reported from systems operating in the visible to near-infrared wavelength range. Here, we use InAs/InP quantum dots to demonstrate photons with coherence times much longer than the Fourier limit at telecom wavelength. Evidence of the responsible elastic laser scattering mechanism is observed in a distinct signature in two-photon interference measurements, and is confirmed using a direct measurement of the emission coherence. Further, we show that even the inelastically scattered photons have coherence times within the error bars of the Fourier limit. Finally, we make direct use of the minimal attenuation in fibre for these photons by measuring two-photon interference after 25 km of fibre, thereby demonstrating indistinguishability of photons emitted about 100 000 excitation cycles apart. △ Less

Submitted 1 June, 2022; v1 submitted 16 May, 2022; originally announced May 2022.

Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term… ▽ More Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term allows the spatial separation of spins to be changed in-situ using a voltage applied to an overall top gate. Here we demonstrate that this can be used to control the splitting of the magnetic focussing peaks. Additionally, we compare the focussing peak splitting to that predicted by Shubnikov-de Haas oscillations and k.p bandstructure calculations. We find that the focussing peak splitting is consistently larger than expected, suggesting further work is needed on understanding spin dependent magnetic focussing. △ Less

Submitted 3 April, 2022; originally announced April 2022.

Two-particle time-domain interferometry in the Fractional Quantum Hall Effect regime

Authors: I. Taktak, M. Kapfer, J. Nath, P. Roulleau, M. Acciai, J. Splettstoesser, I. Farrer, D. A. Ritchie, D. C. Glattli

Abstract: Quasi-particles are elementary excitations of condensed matter quantum phases. Demonstrating that they keep quantum coherence while propagating is a fundamental issue for their manipulation for quantum information tasks. Here, we consider anyons, the fractionally charged quasi-particles 20 of the Fractional Quantum Hall Effect occurring in two-dimensional electronic conductors in high magnetic fie… ▽ More Quasi-particles are elementary excitations of condensed matter quantum phases. Demonstrating that they keep quantum coherence while propagating is a fundamental issue for their manipulation for quantum information tasks. Here, we consider anyons, the fractionally charged quasi-particles 20 of the Fractional Quantum Hall Effect occurring in two-dimensional electronic conductors in high magnetic fields. They obey anyonic statistics, intermediate between fermionic and bosonic. Surprisingly, anyons show large quantum coherence when transmitted through the localized states of electronic Fabry-Pérot interferometers, but almost no quantum interference when transmitted via the propagating states of Mach-Zehnder interferometers. Here, using a novel interferometric 25 approach, we demonstrate that anyons do keep quantum coherence while propagating. Performing two-particle time-domain interference measurements sensitive to the two-particle Hanbury Brown Twiss phase, we find 53% and 60% visibilities for anyons with charges e/5 and e/3. Our results give a positive message for the challenge of performing controlled quantum coherent braiding of anyons. △ Less

Submitted 2 September, 2022; v1 submitted 24 January, 2022; originally announced January 2022.

Comments: Main text and supplementary materials, 24 pages, 11 figures

MSC Class: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph)

Journal ref: Nat Commun 13, 5863 (2022)

Theory of the in-plane photoelectric effect in two-dimensional electron systems

Authors: S. A. Mikhailov, W. Michailow, H. E. Beere, D. A. Ritchie

Abstract: A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has been recently discovered at terahertz (THz) frequencies in a GaAs/Al$_x$Ga$_{1-x}$As heterostructure with a two-dimensional (2D) electron gas (W. Michailow et al., Sci. Adv. \textbf{8}, eabi8398 (2022)). In contrast to the conventional PE phenomena, the IPPE effect is observed at normal incidence of radiation, the height… ▽ More A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has been recently discovered at terahertz (THz) frequencies in a GaAs/Al$_x$Ga$_{1-x}$As heterostructure with a two-dimensional (2D) electron gas (W. Michailow et al., Sci. Adv. \textbf{8}, eabi8398 (2022)). In contrast to the conventional PE phenomena, the IPPE effect is observed at normal incidence of radiation, the height of the in-plane potential step, which electrons overcome after absorption of a THz photon, is electrically tunable by gate voltages, and the effect is maximal at a negative electron ``work function'', when the Fermi energy lies above the potential barrier. Based on the discovered phenomenon, efficient detection of THz radiation has been demonstrated. In this work we present a detailed theory of the IPPE effect providing analytical results for the THz wave generated photocurrent, the quantum efficiency, and the internal responsivity of the detector, in dependence on the frequency, the gate voltages, and the geometrical parameters of the detector. The calculations are performed for macroscopically wide samples at zero temperature. Results of the theory are applicable to any semiconductor systems with 2D electron gases, including III-V structures, silicon-based field effect transistors, and the novel 2D layered, graphene-related materials. △ Less

Submitted 23 August, 2022; v1 submitted 29 October, 2021; originally announced October 2021.

Comments: 22 pages, 15 figures, accepted for publication version

Journal ref: Physical Review B 106, 075411 (2022)

Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality

Authors: P. M. T. Vianez, Y. **, W. K. Tan, Q. Liu, J. P. Griffiths, I. Farrer, D. A. Ritchie, O. Tsyplyatyev, C. J. B. Ford

Abstract: Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore… ▽ More Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore separating the interaction effects from $m_0$. Measuring the spectral function of gated quantum wires formed in GaAs by means of magnetotunnelling spectroscopy and interpreting them using the 1D Fermi-Hubbard model, we obtain $m_0=(0.0525\pm0.0015)m_\textrm{e}$ in this material, where $m_\textrm{e}$ is the free-electron mass. By varying the density in the wires, we change the interaction parameter $r_\textrm{s}$ in the range from $\sim$1-4 and show that $m_0$ remains constant. The determined value of $m_0$ is $\sim 22$% lighter than observed in GaAs in geometries of higher dimensionality $D$ ($D>1$), consistent with the quasi-particle picture of a Fermi liquid that makes electrons heavier in the presence of interactions. △ Less

Submitted 14 March, 2023; v1 submitted 27 October, 2021; originally announced October 2021.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. B 107, 115128 (2023)

Cooling low-dimensional electron systems into the microkelvin regime

Authors: Lev V. Levitin, Harriet van der Vliet, Terje Theisen, Stefanos Dimitriadis, Marijn Lucas, Antonio D. Corcoles, Ján Nyéki, Andrew J. Casey, Graham Creeth, Ian Farrer, David A. Ritchie, James T. Nicholls, John Saunders

Abstract: Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be further controlled by surface gates to create quasi-one dimensional systems, with potential spintronic applications. Here we address the long-standing challenge of co… ▽ More Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be further controlled by surface gates to create quasi-one dimensional systems, with potential spintronic applications. Here we address the long-standing challenge of cooling such electrons to below 1$\,$mK, potentially important for identification of topological phases and spin correlated states. The 2DEG device was immersed in liquid $^3$He, cooled by the nuclear adiabatic demagnetization of copper. The temperature of the 2D electrons was inferred from the electronic noise in a gold wire, connected to the 2DEG by a metallic ohmic contact. With effective screening and filtering, we demonstrate a temperature of 0.9$\,\pm\,$0.1$\,$mK, with scope for significant further improvement. This platform is a key technological step, paving the way to observing new quantum phenomena, and develo** new generations of nanoelectronic devices exploiting correlated electron states. △ Less

Submitted 17 February, 2022; v1 submitted 5 October, 2021; originally announced October 2021.

Comments: 9 pages, 5 figures plus 5 pages of supplementary information

Journal ref: Nature Commun. 13, 667 (2022)

Geometric control of universal hydrodynamic flow in a two dimensional electron fluid

Authors: Aydın Cem Keser, Daisy Q. Wang, Oleh Klochan, Derek Y. H. Ho, Olga A. Tkachenko, Vitaly A. Tkachenko, Dimitrie Culcer, Shaffique Adam, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton

Abstract: Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion… ▽ More Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous `electron fluid'. The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it only affects the resistance through interactions with the sample boundaries, whose roughness is not only unknown but also varies from device to device. Here we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive both in molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters, and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the Random Phase Approximation. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. X 11, 031030 (2021)

Microscopic metallic air-bridge arrays for connecting quantum devices

Authors: Y. **, M. Moreno, P. M. T. Vianez, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford

Abstract: We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining q… ▽ More We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining quantum wires, where the air-bridges are used as suspended connections for the surface gates. This technique enables us to create a large array of uniform one-dimensional channels that are open at both ends. In this article, we outline the details of the fabrication process, together with a study and the solution of the challenges present in the development of the technique, which includes the use of water-IPA (isopropyl alcohol) developer, calibration of resist thickness and numerical simulation of the development. △ Less

Submitted 21 April, 2021; v1 submitted 11 February, 2021; originally announced February 2021.

Comments: 6 pages, 5 figures; This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing

Journal ref: Appl. Phys. Lett. 118, 162108 (2021)

Observing separate spin and charge Fermi seas in a strongly correlated one-dimensional conductor

Authors: P. M. T. Vianez, Y. **, M. Moreno, A. S. Anirban, A. Anthore, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, A. J. Schofield, O. Tsyplyatyev, C. J. B. Ford

Abstract: An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes… ▽ More An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes in 1D gated-wires using tunnelling spectroscopy. We observe two parabolic dispersions, indicative of separate Fermi seas at high energies, associated with spin and charge excitations, together with the emergence of two additional 1D 'replica' modes that strengthen with decreasing wire length. The effective interaction strength is varied by changing the amount of 1D inter-subband screening by over 45%. Our findings demonstrate the existence of spin-charge separation in the whole energy band outside the low-energy limit of validity of the Tomonaga-Luttinger model, and also set a constraint on the validity of the newer nonlinear Tomonaga-Luttinger theory. △ Less

Submitted 1 July, 2022; v1 submitted 10 February, 2021; originally announced February 2021.

Comments: 51 pages, 14 figures

Journal ref: Science Advances 8, eabm2781 (2022)

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Authors: A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I. Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, J. Baugh

Abstract: Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i… ▽ More Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed. △ Less

Submitted 21 December, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 18 pages, 13 figures; one paragraph rephrased on page 8

An in-plane photoelectric effect in two-dimensional electron systems for terahertz detection

Authors: Wladislaw Michailow, Peter Spencer, Nikita W. Almond, Stephen J. Kindness, Robert Wallis, Thomas A. Mitchell, Riccardo Degl'Innocenti, Sergey A. Mikhailov, Harvey E. Beere, David A. Ritchie

Abstract: The photoelectric effect consists in the photoexcitation of electrons above a potential barrier at a material interface and is exploited for photodetection over a wide frequency range. This three-dimensional process has an inherent inefficiency: photoexcited electrons gain momenta predominantly parallel to the interface, while to leave the material they have to move perpendicular to it. Here, we r… ▽ More The photoelectric effect consists in the photoexcitation of electrons above a potential barrier at a material interface and is exploited for photodetection over a wide frequency range. This three-dimensional process has an inherent inefficiency: photoexcited electrons gain momenta predominantly parallel to the interface, while to leave the material they have to move perpendicular to it. Here, we report on the discovery of an in-plane photoelectric effect occurring within a two-dimensional electron gas. In this purely quantum-mechanical, scattering-free process, photo-electron momenta are perfectly aligned with the desired direction of motion. The "work function" is artificially created and tunable in-situ. The phenomenon is utilized to build a direct terahertz detector, which yields a giant zero-bias photoresponse that exceeds the predictions by known mechanisms by more than 10-fold. This new aspect of light-matter interaction in two-dimensional systems paves the way towards a new class of highly efficient photodetectors covering the entire terahertz range. △ Less

Submitted 8 November, 2020; originally announced November 2020.

Comments: 18 pages, 5 figures

Improving reproducibility of quantum devices with completely undoped architectures

Authors: A. Srinivasan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally quantum devices have been fabricated from modulation doped heterostructures, where there is an intrinsic lack of reproducibility due to the random potential from ionized donors. Here we show that we can greatly improve reproducibility o… ▽ More The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally quantum devices have been fabricated from modulation doped heterostructures, where there is an intrinsic lack of reproducibility due to the random potential from ionized donors. Here we show that we can greatly improve reproducibility over modulation doped devices by using a completely undoped architecture, with superior uniformity in the confinement potential and more consistent operating voltages for both electron and hole devices. Our results demonstrate that undoped heterostructures have significant advantages over modulation do** for reproducible manufacturing of quantum devices. △ Less

Submitted 8 November, 2020; originally announced November 2020.

Journal ref: Appl. Phys. Lett. 117, 183101 (2020)

Experimental evidence for topological phases in the magnetoconductance of 2DEG-based hybrid junctions

Authors: Kaveh Delfanazari, Llorenc Serra, Pengcheng Ma, Reuben K. Puddy, Teng Yi, Moda Cao, Yilmaz Gul, Ian Farrer, David A. Ritchie, Hannah J. Joyce, Michael J. Kelly, Charles G. Smith

Abstract: While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid… ▽ More While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid junctions based on two-dimensional electron gases (2DEG) under fully out-of-plane magnetic fields. The large transverse Rashba spin-orbit interaction in 2DEG, together with a strong magneto-orbital effect, yield topological phase transitions to nontrivial phases hosting Majorana modes. Such Majorana modes are formed at the ends of 2DEG-based wires with a hybrid superconductor-semiconductor integrity. Here, we report on the experimental observation of such topological phases in Josephson junctions, based on In0.75Ga0.25As 2DEG, by swee** out-of-plane magnetic fields of as small as 0 < B(mT) < 100 and probing the conductance to highlight the characteristic quantized magnetoconductance plateaus. Our approaches towards (i) creation and detection of topological phases in small out-of-plane magnetic fields, and (ii) integration of an array of topological Josephson junctions on a single chip pave the ways for the development of scalable quantum integrated circuits for their potential applications in fault-tolerant quantum processing and computing. △ Less

Submitted 8 August, 2020; v1 submitted 4 July, 2020; originally announced July 2020.

Comments: 32 pages, 12 figures

Active reset of a radiative cascade for superequilibrium entangled photon generation

Authors: Jonathan R. A. Müller, R. Mark Stevenson, Joanna Skiba-Szymanska, Ginny Shooter, Jan Huwer, Ian Farrer, David A. Ritchie, Andrew J. Shields

Abstract: The generation rate of entangled photons emitted from cascaded few-level systems is intrinsically limited by the lifetime of the radiative transitions. Here, we overcome this limit for entangled photon pairs from quantum dots via a novel driving regime based on an active reset of the radiative cascade. We show theoretically and experimentally the driving regime to enable the generation of entangle… ▽ More The generation rate of entangled photons emitted from cascaded few-level systems is intrinsically limited by the lifetime of the radiative transitions. Here, we overcome this limit for entangled photon pairs from quantum dots via a novel driving regime based on an active reset of the radiative cascade. We show theoretically and experimentally the driving regime to enable the generation of entangled photon pairs with higher fidelity and intensity compared to the optimum continuously driven equilibrium state. Finally, we electrically generate entangled photon pairs with a total fidelity of $(79.5 \pm 1.1)\%$ at a record clock rate of 1.15GHz. △ Less

Submitted 17 January, 2020; originally announced January 2020.

Comments: 6 pages, 4 figures

Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions

Authors: Yousun Chung, Hangtian Hou, Seok-Kyun Son, Tzu-Kan Hsiao, Ateeq Nasir, Antonio Rubino, Jonathan P. Griffiths, Ian Farrer, David A. Ritchie, Christopher J. B. Ford

Abstract: Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have… ▽ More Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have developed a method of creating lateral p-n junctions in an undoped heterostructure containing a quantum well, with the expected advantages of having reduced charge noise and increased spin-coherence lifetimes due to the lack of dopant scattering centres. We present experimental observations of SAW-driven single-electron quantised current in an undoped GaAs/AlGaAs heterostructure, where single electrons were transported between regions of induced electrons. We also demonstrate pum** of electrons by a SAW across the sub-micron depleted channel between regions of electrons and holes, and observe light emission at such a lateral p-n junction. Improving the lateral confinement in the junction should make it possible to produce a quantised electron-to-hole current and hence SAW-driven emission of single photons. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 100, 245401 (2019)

A tuneable telecom-wavelength entangled light emitting diode

Authors: Z. -H. Xiang, J. Huwer, J. Skiba-Szymanska, R. M. Stevenson, D. J. P. Ellis, I. Farrer, M. B. Ward, D. A. Ritchie, A. J. Shields

Abstract: Entangled light emitting diodes based on semiconductor quantum dots are promising devices for security sensitive quantum network applications, thanks to their natural lack of multi photon-pair generation. Apart from telecom wavelength emission, network integrability of these sources ideally requires electrical operation for deployment in compact systems in the field. For multiplexing of entangled… ▽ More Entangled light emitting diodes based on semiconductor quantum dots are promising devices for security sensitive quantum network applications, thanks to their natural lack of multi photon-pair generation. Apart from telecom wavelength emission, network integrability of these sources ideally requires electrical operation for deployment in compact systems in the field. For multiplexing of entangled photons with classical data traffic, emission in the telecom O-band and tuneability to the nearest wavelength channel in compliance with coarse wavelength division multiplexing standards (20 nm channel spacing) is highly desirable. Here we show the first fully electrically operated telecom entangled light emitting diode with wavelength tuneability of more than 25nm, deployed in an installed fiber network. With the source tuned to 1310.00 nm, we demonstrate multiplexing of true single entangled photons with classical data traffic and achieve entanglement fidelities above 95% on an installed fiber in a city. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Comments: 15 pages, 7 figures

Journal ref: Commun Phys 3, 121 (2020)

Non-linear spin filter for non-magnetic materials at zero magnetic field

Authors: E. Marcellina, A. Srinivasan, F. Nichele, P. Stano, D. A. Ritchie, I. Farrer, Dimitrie Culcer, A. R. Hamilton

Abstract: The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasi… ▽ More The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasive detection of spin accumulation without the need for a magnetic field. We demonstrate the operation of this technique with ballistic GaAs holes as a model system with strong spin-orbit coupling, in which a quantum point contact provides the non-linear energy filter. This approach is generally applicable to electron and hole systems with strong spin orbit coupling. △ Less

Submitted 22 October, 2020; v1 submitted 2 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 102, 140406 (2020)

Orientation of hole quantum Hall nematic phases in an out-of-plane electric field

Authors: A. F. Croxall, F. Sfigakis, J. Waldie, I. Farrer, D. A. Ritchie

Abstract: We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$,… ▽ More We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$, and hence the symmetry of the confining potential. For $p\approx2\times10^{11}$~cm$^{-2}$ and $E_\perp \approx -2 \times10^{5}$~V/m, the magnetoresistance along $\langle01\bar1\rangle$ greatly exceeds that along $\langle011\rangle$, suggesting the formation of a quantum Hall nematic or `stripe' phase. Reversing the sign of $E_\perp$ rotates the stripes by $90^{\circ}$. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects. △ Less

Submitted 14 May, 2019; v1 submitted 7 March, 2019; originally announced March 2019.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 99, 195420 (2019)

Continuous-Variable Tomography of Solitary Electrons

Authors: J. D. Fletcher, N. Johnson, E. Locane, P. See, J. P. Griffiths, I. Farrer, D. A. Ritchie, P. W. Brouwer, V. Kashcheyevs, M. Kataoka

Abstract: A method for characterising the wave-function of freely-propagating particles would provide a useful tool for develo** quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband t… ▽ More A method for characterising the wave-function of freely-propagating particles would provide a useful tool for develo** quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level. △ Less

Submitted 20 January, 2020; v1 submitted 30 January, 2019; originally announced January 2019.

Comments: Updated to published text

Journal ref: Nature Communications 10, 5298 (2019)

Experimental realization of a quantum dot energy harvester

Authors: G. Jaliel, R. K. Puddy, R. Sánchez, A. N. Jordan, B. Sothmann, I. Farrer, J. P. Griffiths, D. A. Ritchie, C. G. Smith

Abstract: We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons… ▽ More We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons on the other side of the hot reservoir. The quantum dots thus act as energy filters and allow for the conversion of heat from the cavity into electrical power. This energy harvester device, measured at an estimated base temperature of 75 mK in a He3/He4 dilution refrigerator, can generate a thermal power of 0.13 fW when the temperature difference across each dot is about 67 mK. △ Less

Submitted 1 October, 2019; v1 submitted 29 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Lett. 123, 117701 (2019)

Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode

Authors: Tzu-Kan Hsiao, Antonio Rubino, Yousun Chung, Seok-Kyun Son, Hangtian Hou, Jorge Pedrós, Ateeq Nasir, Gabriel Éthier-Majcher, Megan J. Stanley, Richard T. Phillips, Thomas A. Mitchell, Jonathan P. Griffiths, Ian Farrer, David A. Ritchie, Christopher J. B. Ford

Abstract: Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectr… ▽ More Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network. △ Less

Submitted 10 January, 2019; originally announced January 2019.

Journal ref: Nature Communications 11, 917 (2020)

Momentum-dependent power law measured in an interacting quantum wire beyond the Luttinger limit

Authors: Y. **, O. Tsyplyatyev, M. Moreno, A. Anthore, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, L. I. Glazman, A. J. Schofield, C. J. B. Ford

Abstract: Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the… ▽ More Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the length scale. We present the first experimental example of this new type of power law in the spectral function of interacting electrons in a quantum wire using a transport-spectroscopy technique. The observed momentum dependence of the power law in the high-energy region matches the theoretical predictions, supporting not only the 1D theory of interacting particles beyond the linear regime but also the existence of a new type of universality that emerges at finite energy and momentum. △ Less

Submitted 8 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2821 (2019)

Zero-Magnetic Field Fractional Quantum States

Authors: S. Kumar, M. Pepper, S. N. Holmes, H. Montagu, Y. Gul, D. A. Ritchie, I. Farrer

Abstract: Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing magnetic field. Although various situations have been theoretically envisaged, particularly lattice models in which band flattening resembles Landau levels, the predic… ▽ More Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing magnetic field. Although various situations have been theoretically envisaged, particularly lattice models in which band flattening resembles Landau levels, the predicted fractions have never been observed. In this Letter, we show that odd and even denominator fractions can be observed, and manipulated, in the absence of a quantizing magnetic field, when a low-density electron system in a GaAs based one-dimensional quantum wire is allowed to relax in the second dimension. It is suggested that such a relaxation results in formation of a zig-zag array of electrons with ring paths which establish a cyclic current and a resultant lowering of energy. The behavior has been observed for both symmetric and asymmetric confinement but increasing the asymmetry of the confinement potential, to result in a flattening of confinement, enhances the appearance of new fractional states. We find that an in-plane magnetic field induces new even denominator fractions possibly indicative of electron pairing. The new quantum states described here have implications both for the physics of low dimensional electron systems and also for quantum technologies. This work will enable further development of structures which are designed to electrostatically manipulate the electrons for the formation of particular configurations. In turn, this could result in a designer tailoring of fractional states to amplify particular properties of importance in future quantum computation. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Comments: 4 figures, 16 pages including supplementary material

Journal ref: Phys. Rev. Lett. 122, 086803 (2019)

Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier

Authors: F. J. Schupp, F. Vigneau, Y. Wen, A. Mavalankar, J. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, C. G. Smith, L. C. Camenzind, L. Yu, D. M. Zumbühl, G. A. D. Briggs, N. Ares, E. A. Laird

Abstract: Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The… ▽ More Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time. △ Less

Submitted 29 June, 2020; v1 submitted 12 October, 2018; originally announced October 2018.

Journal ref: Journal of Applied Physics 127 244503 (2020)

Rectification in mesoscopic AC-gated semiconductor devices

Authors: S. P. Giblin, M. Kataoka, J. D. Fletcher, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum… ▽ More We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Comments: 7 pages, 5 figures

Journal ref: Journal of Applied Physics vol. 114, 164505 (2013)

High-resolution error detection in the capture process of a single-electron pump

Authors: S. P. Giblin, P. See, A. Petrie, T. J. B. M. Janssen, I. Farrer, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie, M. Kataoka

Abstract: The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pum**. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC curre… ▽ More The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pum**. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 5 pages, 4 figures

Journal ref: Applied Physics Letters vol. 108, 023502 (2016)

Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices

Authors: H. Hou, Y. Chung, G. Rughoobur, T. K. Hsiao, A. Nasir, A. J. Flewitt, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford

Abstract: In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of su… ▽ More In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of surface charge, together with a very deep back boundary. Experimentally, we find a 0.2V offset in pinch-off characteristics of one-dimensional channels in a doped heterostructure before and after etching off a ZnO overlayer, as predicted by the model. Also, we observe a clear quantised current driven by a surface acoustic wave through a lateral induced n-i-n junction in an undoped heterostructure. In the model, the ability to pump electrons in this type of device is highly sensitive to the back BC. Using the improved boundary conditions, it is straightforward to model quantum devices quite accurately using standard software. △ Less

Submitted 24 June, 2018; originally announced June 2018.

Comments: 8 pages, 3 figures

Journal ref: J. Phys. D: Appl. Phys. 51 (2018) 244004 (6pp)

A Josephson frequency for fractionally charged anyons

Authors: M. Kapfer, P. Roulleau, M. Santin, I. Farrer, D. A. Ritchie, D. C. Glattli

Abstract: Anyons occur in two-dimensional electron systems as excitations with fractional charge in the topologically ordered states of the Fractional Quantum Hall Effect (FQHE). Their dynamics are of utmost importance for topological quantum phases and possible decoherence free quantum information approaches, but observing these dynamics experimentally is challenging. Here we report on a dynamical property… ▽ More Anyons occur in two-dimensional electron systems as excitations with fractional charge in the topologically ordered states of the Fractional Quantum Hall Effect (FQHE). Their dynamics are of utmost importance for topological quantum phases and possible decoherence free quantum information approaches, but observing these dynamics experimentally is challenging. Here we report on a dynamical property of anyons: the long predicted Josephson relation fJ=e*V/h for charges e*=e/3 and e/5, where e is the charge of the electron and h is Planck's constant. The relation manifests itself as marked signatures in the dependence of Photo Assisted Shot Noise (PASN) on voltage V when irradiating contacts at microwaves frequency fJ. The validation of FQHE PASN models indicates a path towards realizing time-resolved anyon sources based on levitons. △ Less

Submitted 15 March, 2019; v1 submitted 8 June, 2018; originally announced June 2018.

Comments: Main text and supplementary material, 26 pages, 11 figures, published in Science 363 (2019) 846-849

MSC Class: primary: cond-mat.mes-hall; secondary: quant-ph

Journal ref: Science 363 (2019) 846-849

Controllable photonic time-bin qubits from a quantum dot

Authors: J. P. Lee, L. M. Wells, B. Villa, S. Kalliakos, R. M. Stevenson, D. J. P. Ellis, I. Farrer, D. A. Ritchie, A. J. Bennett, A. J. Shields

Abstract: Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete con… ▽ More Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete control over the phase, $φ$. We show that this photon generation process can be performed deterministically, with only a moderate loss in coherence. Finally, we encode different qubits in different energies of the Raman scattered light, demonstrating wavelength division multiplexing at the single photon level. △ Less

Submitted 2 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. X 8, 021078 (2018)

Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures

Authors: Shun-Tsung Lo, Chin-Hung Chen, Ju-Chun Fan, L. W. Smith, G. L. Creeth, Che-Wei Chang, M. Pepper, J. P. Griffiths, I. Farrer, H. E. Beere, G. A. C. Jones, D. A. Ritchie, Tse-Ming Chen

Abstract: The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a t… ▽ More The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a time. Here we demonstrate that the spatial spin splitting of a coherent beam of electrons can be achieved and controlled using the interplay between an external magnetic field and Rashba spin-orbit interaction in semiconductor nanostructures. The technique of transverse magnetic focusing is used to detect this spin separation. More notably, our ability to engineer the spin-orbit interactions enables us to simultaneously manipulate and probe the coherent spin dynamics of both spin species and hence their correlation, which could open a route towards spintronics and spin-based quantum information processing. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Comments: 15 pages, 4 figures

Journal ref: Nature Communications 8, 15997 (2017)

LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure

Authors: N. Johnson, C. Emary, S. Ryu, H. -S. Sim, P. See, J. D. Fletcher, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen, M. Kataoka

Abstract: Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a tw… ▽ More Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications. △ Less

Submitted 25 December, 2017; originally announced December 2017.

Comments: 5 pages and supplementary

Journal ref: Phys. Rev. Lett. 121, 137703 (2018)

A quantum light emitting diode for the standard telecom window around 1550 nm

Authors: T. Müller, J. Skiba-Szymanska, A. Krysa, J. Huwer, M. Felle, M. Anderson, R. M. Stevenson, J. Heffernan, D. A. Ritchie, A. J. Shields

Abstract: For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region with multiphoton events suppressed down to 0.11$\pm$0.… ▽ More For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region with multiphoton events suppressed down to 0.11$\pm$0.02. Using the biexciton cascade mechanism, they further produce entangled photons with a fidelity of 87$\pm$4%, sufficient for the application of one-way error correction protocols. The new material allows for entangled photon generation up to an operating temperature of 93 K, reaching a regime accessible by electric coolers. The quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems and provides a new material platform for develo** future quantum network hardware. △ Less

Submitted 10 October, 2017; originally announced October 2017.

Comments: 7 pages, 4 figures

Surface Acoustic wave modulation of a coherently driven quantum dot in a pillar microcavity

Authors: B. Villa, A. J. Bennett, D. J. P. Ellis, J. P. Lee, J. Skiba-Szymanska, T. A. Mitchell, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford, A. J. Shields

Abstract: We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of sing… ▽ More We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of single-photon emission. Multiple phonon sidebands are resolved in the emission spectrum, due to the absorption and emission of vibrational quanta in each scattering event. △ Less

Submitted 4 July, 2017; originally announced July 2017.

Comments: To be published in Applied Physics Letters

Journal ref: Applied Physics Letters, vol. 111, no. 1, p. 011103, Jul. 2017

Dark Solitons in Waveguide Polariton Fluids Shed Light on Interaction Constants

Authors: P. M. Walker, L. Tinkler, B. Royall, D. V. Skryabin, I. Farrer, D. A. Ritchie, M. S. Skolnick, D. N. Krizhanovskii

Abstract: We study exciton-polariton nonlinear optical fluids in a high momentum regime for the first time. Defects in the fluid develop into dark solitons whose healing length decreases with increasing density. We deduce interaction constants for continuous wave polaritons an order of magnitude larger than with picosecond pulses. Time dependent measurements show a 100ps time for the buildup of the interact… ▽ More We study exciton-polariton nonlinear optical fluids in a high momentum regime for the first time. Defects in the fluid develop into dark solitons whose healing length decreases with increasing density. We deduce interaction constants for continuous wave polaritons an order of magnitude larger than with picosecond pulses. Time dependent measurements show a 100ps time for the buildup of the interaction strength suggesting a self-generated excitonic reservoir as the source of the extra nonlinearity. The experimental results agree well with a model of coupled photons, excitons and the reservoir. △ Less

Submitted 24 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. Lett. 119, 097403 (2017)