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Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
Authors:
E. Cheah,
D. Z. Haxell,
R. Schott,
P. Zeng,
E. Paysen,
S. C. ten Kate,
M. Coraiola,
M. Landstetter,
A. B. Zadeh,
A. Trampert,
M. Sousa,
H. Riel,
F. Nichele,
W. Wegscheider,
F. Krizek
Abstract:
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures a…
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In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. We present a study of Al films on shallow InAs two-dimensional electron gas systems grown by molecular beam epitaxy, with focus on control of the Al crystal structure. We identify the dominant grain types present in our Al films and show that the formation of grain boundaries can be significantly reduced by controlled roughening of the epitaxial interface. Finally, we demonstrate that the implemented roughening does not negatively impact either the electron mobility of the two-dimensional electron gas or the basic superconducting properties of the proximitized system.
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Submitted 17 January, 2023;
originally announced January 2023.
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Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots
Authors:
S. C. ten Kate,
M. F. Ritter,
A. Fuhrer,
J. Jung,
S. G. Schellingerhout,
E. P. A. M. Bakkers,
H. Riel,
F. Nichele
Abstract:
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-o…
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PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.
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Submitted 13 May, 2022;
originally announced May 2022.
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Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs
Authors:
D. Z. Haxell,
E. Cheah,
F. Křížek,
R. Schott,
M. F. Ritter,
M. Hinderling,
W. Belzig,
C. Bruder,
W. Wegscheider,
H. Riel,
F. Nichele
Abstract:
We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature…
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We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature $T^{*}$ is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate dam**, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, $T^*$ is also tuned by a magnetic flux.
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Submitted 21 November, 2022; v1 submitted 12 April, 2022;
originally announced April 2022.
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Semiconductor Epitaxy in Superconducting Templates
Authors:
M. F. Ritter,
H. Schmid,
M. Sousa,
P. Staudinger,
D. Z. Haxell,
M. A. Mueed,
B. Madon,
A. Pushp,
H. Riel,
F. Nichele
Abstract:
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characteriz…
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Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
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Submitted 12 August, 2021;
originally announced August 2021.
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On the Role of Out-of-Equilibrium Phonons in Gated Superconducting Switches
Authors:
M. F. Ritter,
N. Crescini,
D. Z. Haxell,
M. Hinderling,
H. Riel,
C. Bruder,
A. Fuhrer,
F. Nichele
Abstract:
Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric…
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Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric field and electron-current flow can be clearly separated. Our results show that suppression of superconductivity does not depend on the presence or absence of an electric field at the surface of the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained also when electrons are passed between two remote electrodes at a distance $d$ to the nanowire (with $d$ in excess of $1~\mathrm{μm}$). In the latter case, high-energy electrons decay into phonons which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. We show that this process involves a non-thermal phonon distribution, with marked differences from the loss of superconductivity due to Joule heating near the nanowire or an increase in the bath temperature.
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Submitted 3 June, 2021;
originally announced June 2021.
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A superconducting switch actuated by injection of high energy electrons
Authors:
M. F. Ritter,
A. Fuhrer,
D. Z. Haxell,
S. Hart,
P. Gumann,
H. Riel,
F. Nichele
Abstract:
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting…
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Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting devices. Here we present an electrically controlled superconducting switch based on a metallic nanowire. Transition from superconducting to resistive state is realized by tunneling of high-energy electrons from a gate contact through an insulating barrier. Operating gate currents are several orders of magnitude smaller than the nanowire critical source-drain current, effectively resulting in a voltage-controlled device. This superconducting switch is fast, self-resets from normal to superconducting state, and can operate in large magnetic fields, making it an ideal component for low-power cryogenic applications and quantum computing architectures.
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Submitted 1 May, 2020;
originally announced May 2020.
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An open-source platform to study uniaxial stress effects on nanoscale devices
Authors:
G. Signorello,
M. Schraff,
P. Zellekens,
U. Drechsler,
M. Buerge,
H. R. Steinauer,
R. Heller,
M. Tschudy,
H. Riel
Abstract:
We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the plat…
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We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.
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Submitted 5 April, 2017;
originally announced April 2017.
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Heat transport through atomic contacts
Authors:
Nico Mosso,
Ute Drechsler,
Fabian Menges,
Peter Nirmalraj,
Siegfried Karg,
Heike Riel,
Bernd Gotsmann
Abstract:
Metallic atomic junctions pose the ultimate limit to the scaling of electrical contacts. They serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects occurring in one-dimensional systems. Charge transport in atomic junctions has been studied intensively in the last two decades. However, heat transport remains poorly characterized because…
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Metallic atomic junctions pose the ultimate limit to the scaling of electrical contacts. They serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects occurring in one-dimensional systems. Charge transport in atomic junctions has been studied intensively in the last two decades. However, heat transport remains poorly characterized because of significant experimental challenges. Specifically the combination of high sensitivity to small heat fluxes and the formation of stable atomic contacts has been a major hurdle for the development of this field. Here we report on the realization of heat transfer measurements through atomic junctions and analyze the thermal conductance of single atomic gold contacts at room temperature. Simultaneous measurements of charge and heat transport reveal the proportionality of electrical and thermal conductance, quantized with the respective conductance quanta. This constitutes an atomic scale verification of the well-known Wiedemann-Franz law. We anticipate that our findings will be a major advance in enabling the investigation of heat transport properties in molecular junctions, with meaningful implications towards the manipulation of heat at the nanoscale
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Submitted 14 December, 2016;
originally announced December 2016.
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Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition
Authors:
Fabian Menges,
Matthias Dittberner,
Lukas Novotny,
Donata Passarello,
Stuart Parkin,
Martin Spieser,
Heike Riel,
Bernd Gotsmann
Abstract:
The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titaniu…
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The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, the sphere temperatures were varied in a range between 100 and 200 Celsius. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.
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Submitted 20 January, 2016; v1 submitted 30 December, 2015;
originally announced December 2015.
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High-Conductive Organometallic Molecular Wires with Delocalized Electron Systems Strongly Coupled to Metal Electrodes
Authors:
Florian Schwarz,
Georg Kastlunger,
Franziska Lissel,
Heike Riel,
Koushik Venkatesan,
Heinz Berke,
Robert Stadler,
Emanuel Lörtscher
Abstract:
Besides active, functional molecular building blocks such as diodes or switches, passive components as, e.g., molecular wires, are required to realize molecular-scale electronics. Incorporating metal centers in the molecular backbone enables the molecular energy levels to be tuned in respect to the Fermi energy of the electrodes. Furthermore, by using more than one metal center and sp-bridging lig…
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Besides active, functional molecular building blocks such as diodes or switches, passive components as, e.g., molecular wires, are required to realize molecular-scale electronics. Incorporating metal centers in the molecular backbone enables the molecular energy levels to be tuned in respect to the Fermi energy of the electrodes. Furthermore, by using more than one metal center and sp-bridging ligands, a strongly delocalized electron system is formed between these metallic "dopants", facilitating transport along the molecular backbone. Here, we study the influence of molecule--metal coupling on charge transport of dinuclear X(PP)$_2$FeC$_4$Fe(PP)$_2$X molecular wires (PP = Et$_2$PCH$_2$CH$_2$PEt$_2$); X = CN (1), NCS (2), NCSe (3), C$_4$SnMe$_3$ (4) and C$_2$SnMe$_3$ (5)) under ultra-high vacuum and variable temperature conditions. In contrast to 1 which showed unstable junctions at very low conductance ($8.1\cdot10^{-7}$ G$_0$), 4 formed a Au-C$_4$FeC$_4$FeC$_4$-Au junction 4' after SnMe$_3$ extrusion which revealed a conductance of $8.9\cdot10^{-3}$ G$_0$, three orders of magnitude higher than for 2 ($7.9\cdot10^{-6}$ G$_0$) and two orders of magnitude higher than for 3 ($3.8\cdot10^{-4}$ G$_0$). Density functional theory (DFT) confirmed the experimental trend in the conductance for the various anchoring motifs. The strong hybridization of molecular and metal states found in the C--Au coupling case enables the delocalized electronic system of the organometallic Fe$_2$ backbone to be extended over the molecule-metal interfaces to the metal electrodes to establish high-conductive molecular wires.
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Submitted 5 November, 2015;
originally announced November 2015.
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Single photon emission and detection at the nanoscale utilizing semiconductor nanowires
Authors:
Michael E. Reimer,
Maarten P. van Kouwen,
Maria Barkelid,
Moira Hocevar,
Maarten. H. M. van Weert,
Rienk E. Algra,
Erik P. A. M. Bakkers,
Mikael T. Bjork,
Heinz Schmid,
Heike Riel,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical…
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We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.
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Submitted 2 September, 2010;
originally announced September 2010.
