Showing 1–7 of 7 results for author: Riedl, T

Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics

Authors: Jarla Thiesbrummel, Francisco Peña-Camargo, Kai Oliver Brinkmann, Emilio Gutierrez-Partida, Fengjiu Yang, Jonathan Warby, Steve Albrecht, Dieter Neher, Thomas Riedl, Henry J. Snaith, Martin Stolterfoht, Felix Lang

Abstract: All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will ac… ▽ More All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will accelerate advancement. Here, we perform extensive selective characterization of the individual sub-cells to disentangle the different losses and limiting factors in these tandem devices. We find that non-radiative losses in the high-gap subcell dominate the overall recombination losses in our baseline system as well as in the majority of literature reports. We consecutively improve the high-gap perovskite subcell through a multi-faceted approach, allowing us to enhance the open-circuit voltage ($V_{OC}$) of the subcell by up to 120 mV. Due to the (quasi) lossless indium oxide interconnect which we employ for the first time in all-perovskite tandems, the $V_{OC}$ improvements achieved in the high-gap perovskites translate directly to improved all-perovskite tandem solar cells with a champion $V_{OC}$ of 2.00 V and a stabilized efficiency of 23.7%. The efficiency potential of our optimized all-perovskite tandems reaches 25.2% and 27.0% when determined from electro- and photo-luminescence respectively, indicating significant transport losses as well as imperfect energy-alignment between the perovskite and the transport layers in the experimental devices. Further improvements to 28.4% are possible considering the bulk quality of both absorbers measured using photo-luminescence on isolated perovskite layers. Our insights therefore not only show an optimization example but a generalizable evidence-based strategy for optimization utilizing optical sub-cell characterization. △ Less

Submitted 20 July, 2022; originally announced July 2022.

Comments: Main text: 19 pages, 6 figures, supporting information: 17 pages, 18 figures

Microstructure manipulation by laser-surface remelting of a full-Heusler compound to enhance thermoelectric properties

Authors: Leonie Gomell, Tobias Haeger, Moritz Roscher, Hanna Bishara, Ralf Heiderhoff, Thomas Riedl, Christina Scheu, Baptiste Gault

Abstract: There is an increasing reckoning that the thermoelectric performance of a material is dependent on its microstructure. However, the microstructure-properties relationship often remains elusive, in part due to the complexity of the hierarchy and scales of features that influence transport properties. Here, we focus on the promising Heusler-Fe2VAl compound. We directly correlate microstructure and l… ▽ More There is an increasing reckoning that the thermoelectric performance of a material is dependent on its microstructure. However, the microstructure-properties relationship often remains elusive, in part due to the complexity of the hierarchy and scales of features that influence transport properties. Here, we focus on the promising Heusler-Fe2VAl compound. We directly correlate microstructure and local properties, using advanced scanning electron microscopy methods including in-situ four-point-probe technique for electron transport measurements. The local thermal conductivity is investigated by scanning thermal microscopy. Finally, atom probe tomography provides near-atomic scale compositional analysis. To locally manipulate the microstructure, we use laser surface remelting. The rapid quenching creates a complex microstructure with a high density of dislocations and small, elongated grains. We hence showcase that laser surface remelting can be employed to manipulate the microstructure to reduce the thermal conductivity and electrical resistivity, leading to a demonstrated enhancement of the thermoelectric performance at room temperature. △ Less

Submitted 15 July, 2021; originally announced July 2021.

Nonlinear refraction in CH$_3$NH$_3$PbBr$_3$ single crystals

Authors: Christian Kriso, Markus Stein, Tobias Haeger, Neda Pourdavoud, Marina Gerhard, Arash Rahimi-Iman, Thomas Riedl, Martin Koch

Abstract: Hybrid lead halide perovskites, such as CH$_3$NH$_3$PbX$_3$ (X=I, Br), are direct gap semiconductors that offer many superior optoelectronic properties combined with extremely simple solution-processing fabrication methods. This makes them very attractive for use in applications like solar cells or light-emitting devices. Recently, also their nonlinear optical properties have received increased at… ▽ More Hybrid lead halide perovskites, such as CH$_3$NH$_3$PbX$_3$ (X=I, Br), are direct gap semiconductors that offer many superior optoelectronic properties combined with extremely simple solution-processing fabrication methods. This makes them very attractive for use in applications like solar cells or light-emitting devices. Recently, also their nonlinear optical properties have received increased attention due to reports of high nonlinear refraction in thin films and nanoparticles. However, understanding of the underlying mechanisms is poor and limited by the lack of knowledge of fundamental parameters like the nonlinear refractive index of the bulk material. Here, we measure both nonlinear absorption and nonlinear refraction in a CH$_3$NH$_3$PbBr$_3$ single crystal using the Z-scan technique with femtosecond laser pulses. At 1000 nm, we obtain values of 5.2 cm/GW and 9.5$\cdot$10$^{-14}$ cm$^2$/W for nonlinear absorption and nonlinear refraction, respectively. Sign and magnitude of the observed refractive nonlinearity are reproduced well by the two-band model. To our knowledge, these measurements mark the first characterization of nonlinear refraction in any metal halide perovskite single crystal and thus will serve as an important reference for assessing the potential of this emerging material class for nonlinear optical applications. △ Less

Submitted 28 October, 2019; originally announced October 2019.

Applicability of molecular statics simulation to partial dislocations in GaAs

Authors: Thomas Riedl, Jörg K. N. Lindner

Abstract: The suitability of molecular statics (MS) simulations to model the structure of 90° glide set partial dislocation cores in GaAs is analyzed. In the MS simulations the atomic positions are iteratively relaxed by energy minimization, for which a Tersoff potential parametrization appropriate for nanostructures has been used. We show that for the Ga terminated partial the resulting bond lengths of the… ▽ More The suitability of molecular statics (MS) simulations to model the structure of 90° glide set partial dislocation cores in GaAs is analyzed. In the MS simulations the atomic positions are iteratively relaxed by energy minimization, for which a Tersoff potential parametrization appropriate for nanostructures has been used. We show that for the Ga terminated partial the resulting bond lengths of the atoms in the dislocation core agree within 5-10% with those of previous density functional theory studies, whereas a significant discrepancy appears in the case of the As terminated partial. △ Less

Submitted 19 September, 2019; originally announced September 2019.

Comments: 7 pages, 3 figures, 2 tables

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

Authors: V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. K. N. Lindner

Abstract: Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the… ▽ More Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks. △ Less

Submitted 18 September, 2019; originally announced September 2019.

Strain-driven InAs island growth on top of GaAs(111) nanopillars

Authors: T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. K. N. Lindner

Abstract: We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at posit… ▽ More We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at positions displaced from the center towards the pillar edge. Atomistic molecular statics simulations evidence that triangular-prismatic islands centered to the pillar axis with diameters smaller than that of the nanopillars are energetically favored. Moreover, we reveal the existence of minimum-energy states for off-axis island positions, in agreement with the experiment. These findings are interpreted by evaluating the spatial strain distributions and the number of broken bonds of surface atoms as a measure for the surface energy. The preferred off-axis island positions can be understood in terms of an increased compliancy of the GaAs nanopillar beneath the island because of the vicinity of free surfaces, leading to a reduction of strain energy. The influence of surface steps on the energy of the system is addressed as well. △ Less

Submitted 13 January, 2020; v1 submitted 17 September, 2019; originally announced September 2019.

Comments: 18 pages, 4 figures. Paper updated to match published version

Journal ref: Phys. Rev. Materials 4, 014602 (2020)

Stark Effect of Hybrid Charge Transfer States at Planar ZnO/Organic Interfaces

Authors: Ulrich Hörmann, Stefan Zeiske, Fortunato Piersimoni, Lukas Hoffmann, Raphael Schlesinger, Norbert Koch, Thomas Riedl, Denis Andrienko, Dieter Neher

Abstract: We investigate the bias-dependence of the hybrid charge transfer state emission at planar heterojunctions between the metal oxide acceptor ZnO and three donor molecules. The electroluminescence peak energy linearly increases with the applied bias, saturating at high fields. Variation of the organic layer thickness and deliberate change of the ZnO conductivity through controlled photo-do** allow… ▽ More We investigate the bias-dependence of the hybrid charge transfer state emission at planar heterojunctions between the metal oxide acceptor ZnO and three donor molecules. The electroluminescence peak energy linearly increases with the applied bias, saturating at high fields. Variation of the organic layer thickness and deliberate change of the ZnO conductivity through controlled photo-do** allow us to confirm that this bias-induced spectral shifts relate to the internal electric field in the organic layer rather than the filling of states at the hybrid interface. We show that existing continuum models overestimate the hole delocalization and propose a simple electrostatic model in which the linear and quadratic Stark effects are explained by the electrostatic interaction of a strongly polarizable molecular cation with its mirror image. △ Less

Submitted 1 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. B 98, 155312 (2018)