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Two-tone spectroscopy of high-frequency quantum circuits with a Josephson emitter
Authors:
A. Peugeot,
H. Riechert,
S. Annabi,
L. Balembois,
M. Villiers,
E. Flurin,
J. Griesmar,
E. Arrighi,
J. -D. Pillet,
L. Bretheau
Abstract:
We perform two-tone spectroscopy on quantum circuits, where high-frequency radiation is generated by a voltage-biased superconductor-normal-superconductor Josephson junction and detection is carried out by an ancillary microwave resonator. We implement this protocol on two different systems, a transmon qubit and a $λ/4$ resonator. We demonstrate that this two-tone Josephson spectroscopy operates w…
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We perform two-tone spectroscopy on quantum circuits, where high-frequency radiation is generated by a voltage-biased superconductor-normal-superconductor Josephson junction and detection is carried out by an ancillary microwave resonator. We implement this protocol on two different systems, a transmon qubit and a $λ/4$ resonator. We demonstrate that this two-tone Josephson spectroscopy operates well into the millimeter-wave band, reaching frequencies larger than 80 GHz, and is well-suited for probing highly coherent quantum systems.
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Submitted 12 June, 2024;
originally announced June 2024.
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Ultraclean carbon nanotube-based Josephson junctions
Authors:
S. Annabi,
E. Arrighi,
A. Peugeot,
H. Riechert,
J. Griesmar,
K. Watanabe,
T. Taniguchi,
L. Bretheau,
J. -D. Pillet
Abstract:
We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrod…
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We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrodes and a crystalline hBN substrate. Through transport measurements performed in both the normal and superconducting states, we demonstrate that our method yields high-quality junctions with Josephson energies suitable for quantum device applications, such as carbon nanotube-based superconducting qubits.
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Submitted 29 May, 2024;
originally announced May 2024.
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High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
Authors:
J. K. Zettler,
C. Hauswald,
P. Corfdir,
M. Musolino,
L. Geelhaar,
H. Riechert,
O. Brandt,
S. Fernández-Garrido
Abstract:
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) usin…
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In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy.
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Submitted 30 January, 2024;
originally announced February 2024.
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Josephson Diode Effect in Andreev Molecules
Authors:
J. -D. Pillet,
S. Annabi,
A. Peugeot,
H. Riechert,
E. Arrighi,
J. Griesmar,
L. Bretheau
Abstract:
We propose a new platform for observing the Josephson diode effect: the Andreev molecule. This nonlocal electronic state is hosted in circuits made of two closely spaced Josephson junctions, through the hybridization of the Andreev states. The Josephson diode effect occurs at the level of one individual junction while the other one generates the required time-reversal and spatial-inversion symmetr…
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We propose a new platform for observing the Josephson diode effect: the Andreev molecule. This nonlocal electronic state is hosted in circuits made of two closely spaced Josephson junctions, through the hybridization of the Andreev states. The Josephson diode effect occurs at the level of one individual junction while the other one generates the required time-reversal and spatial-inversion symmetry breaking. We present a microscopic description of this phenomenon based on fermionic Andreev states, focusing on single channels in the short limit, and we compute both supercurrent and energy spectra. We demonstrate that the diode efficiency can be tuned by magnetic flux and the junctions transmissions, and can reach $45~\%$. Going further, by analyzing the Andreev spectra, we demonstrate the key role played by the continuum, which consists of leaky Andreev states and is largely responsible for the critical current asymmetry. On top of proposing an experimentally accessible platform, this work elucidates the microscopic origin of the Josephson diode effect at the level of the fermionic Andreev states.
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Submitted 21 June, 2023;
originally announced June 2023.
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Engineering a U(1) lattice gauge theory in classical electric circuits
Authors:
Hannes Riechert,
Jad C. Halimeh,
Valentin Kasper,
Landry Bretheau,
Erez Zohar,
Philipp Hauke,
Fred Jendrzejewski
Abstract:
Lattice gauge theories are fundamental to such distinct fields as particle physics, condensed matter, and quantum information science. Their local symmetries enforce the charge conservation observed in the laws of physics. Impressive experimental progress has demonstrated that they can be engineered in table-top experiments using synthetic quantum systems. However, the challenges posed by the scal…
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Lattice gauge theories are fundamental to such distinct fields as particle physics, condensed matter, and quantum information science. Their local symmetries enforce the charge conservation observed in the laws of physics. Impressive experimental progress has demonstrated that they can be engineered in table-top experiments using synthetic quantum systems. However, the challenges posed by the scalability of such lattice gauge simulators are pressing, thereby making the exploration of different experimental setups desirable. Here, we realize a U(1) lattice gauge theory with five matter sites and four gauge links in classical electric circuits employing nonlinear elements connecting LC oscillators. This allows for probing previously inaccessible spectral and transport properties in a multi-site system. We directly observe Gauss's law, known from electrodynamics, and the emergence of long-range interactions between massive particles in full agreement with theoretical predictions. Our work paves the way for investigations of increasingly complex gauge theories on table-top classical setups, and demonstrates the precise control of nonlinear effects within metamaterial devices.
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Submitted 2 August, 2021;
originally announced August 2021.
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Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
Authors:
David van Treeck,
Johannes Ledig,
Gregor Scholz,
Jonas Lähnemann,
Mattia Musolino,
Abbes Tahraoui,
Oliver Brandt,
Andreas Waag,
Henning Riechert,
Lutz Geelhaar
Abstract:
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single…
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We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I-V characteristics are described well by the modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool.
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Submitted 23 August, 2019;
originally announced August 2019.
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Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Authors:
Hanno Küpers,
Ryan B. Lewis,
Abbes Tahraoui,
Mathias Matalla,
Olaf Krüger,
Faebian Bastiman,
Henning Riechert,
Lutz Geelhaar
Abstract:
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diameter evolution. In the first step, the growth parameters are optimized for the nucleation of vertically-oriented NWs. In the second step, the growth parameters are chosen to optimize the NW shape, allowing NWs with a thin…
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We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diameter evolution. In the first step, the growth parameters are optimized for the nucleation of vertically-oriented NWs. In the second step, the growth parameters are chosen to optimize the NW shape, allowing NWs with a thin diameter (45 nm) and an untapered morphology to be realized. This result is in contrast to the commonly observed thick, inversely tapered shape of SAG NWs. We quantify the flux dependence of radial vapour-solid (VS) growth and build a model that takes into account diffusion on the NW sidewalls to explain the observed VS growth rates. Combining this model for the radial VS growth with an existing model for the droplet dynamics at the NW top, we achieve full understanding of the diameter of NWs over their entire length and the evolution of the diameter and tapering during growth. We conclude that only the combination of droplet dynamics and VS growth results in an untapered morphology. This result enables NW shape engineering and has important implications for do** of NWs.
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Submitted 18 August, 2017;
originally announced August 2017.
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Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Authors:
Hanno Küpers,
Abbes Tahraoui,
Ryan B. Lewis,
Sander Rauwerdink,
Mathias Matalla,
Olaf Krüger,
Faebian Bastiman,
Henning Riechert,
Lutz Geelhaar
Abstract:
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact on NW growth by molecular beam epitaxy. We show that boiling the substrate in ultrapure water leads to a significant improvement in the vertical yield of NWs (realizing 80%) grown on substrates patterne…
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The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact on NW growth by molecular beam epitaxy. We show that boiling the substrate in ultrapure water leads to a significant improvement in the vertical yield of NWs (realizing 80%) grown on substrates patterned by electron-beam lithography (EBL). Tentatively, we attribute this improvement to a reduction in atomic roughness of the substrate in the mask opening. On this basis, we transfer our growth results to substrates processed by a technique that enables the efficient patterning of large arrays, nano imprint lithography (NIL). In order to obtain hole sizes below 50 nm, we combine the conventional NIL process with an indirect pattern transfer (NIL-IPT) technique. Thereby, we achieve smaller hole sizes than previously reported for conventional NIL and growth results that are comparable to those achieved on EBL patterned substrates.
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Submitted 8 August, 2017;
originally announced August 2017.
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Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
Authors:
Kirill V. Mitrofanov,
Paul Fons,
Kotaro Makino,
Ryo Terashima,
Toru Shimada,
Alexander V. Kolobov,
Junji Tominaga,
Valeria Bragaglia,
Alessandro Giussani,
Raffaella Calarco,
Henning Riechert,
Takahiro Sato,
Tetsuo Katayama,
Kanade Ogawa,
Tadashi Togashi,
Makina Yabashi,
Simon Wall,
Dale Brewe,
Muneaki Hase
Abstract:
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived ($>$100 ps) transient met…
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Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived ($>$100 ps) transient metastable state of Ge$_{2}$Sb$_{2}$Te$_{5}$ with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.
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Submitted 26 May, 2017;
originally announced May 2017.
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In/GaN(0001)-$\boldsymbol{{\mathsf{\left(\!\sqrt{3}\times\!\sqrt{3}\right)\!R30^{\circ}}}}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices
Authors:
C. Chèze,
F. Feix,
M. Anikeeva,
T. Schulz,
M. Albrecht,
H. Riechert,
O. Brandt,
R. Calarco
Abstract:
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 mo…
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We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures.
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Submitted 17 January, 2017;
originally announced January 2017.
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A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
Authors:
M. Musolino,
D. van Treeck,
A. Tahraoui,
L. Scarparo,
C. De Santi,
M. Meneghini,
E. Zanoni,
L. Geelhaar,
H. Riechert
Abstract:
We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the prese…
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We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of $570\pm20$ and $840\pm30$ meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hop** and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.
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Submitted 11 November, 2015;
originally announced November 2015.
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Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Authors:
Johannes K. Zettler,
Pierre Corfdir,
Lutz Geelhaar,
Henning Riechert,
Oliver Brandt,
Sergio Fernández-Garrido
Abstract:
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire en…
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We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN nanowires at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time.
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Submitted 25 August, 2015;
originally announced August 2015.
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Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
Authors:
S. Nakhaie,
J. M. Wofford,
T. Schumann,
U. Jahn,
M. Ramsteiner,
M. Hanke,
J. M. J. Lopes,
H. Riechert
Abstract:
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morpholog…
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Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.
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Submitted 28 May, 2015; v1 submitted 26 January, 2015;
originally announced January 2015.
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Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN
Authors:
Hong Li,
Lutz Geelhaar,
Henning Riechert,
Claudia Draxl
Abstract:
Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this context. It is determined by surface energies, which are hard to access experimentally but can generally be well predicted by first-principles methods. Unfortunately, this is not necessarily so for polar and semipolar s…
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Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this context. It is determined by surface energies, which are hard to access experimentally but can generally be well predicted by first-principles methods. Unfortunately, this is not necessarily so for polar and semipolar surfaces of wurtzite crystals. By extending the concept of Wulff construction, we demonstrate that the ECSs can nevertheless be obtained for this class of materials. For the example of GaN, we identify different crystal shapes depending on the chemical potential, shedding light on experimentally observed GaN nanostructures.
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Submitted 25 August, 2015; v1 submitted 18 November, 2014;
originally announced November 2014.
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Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Authors:
Mattia Musolino,
Abbes Tahraoui,
Sergio Fernández-Garrido,
Oliver Brandt,
Achim Trampert,
Lutz Geelhaar,
Henning Riechert
Abstract:
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these laye…
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AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with short nucleation time. Such an AlN buffer layer was successfully employed, together with a patterned SiOx mask, for the selective-area growth (SAG) of vertical GaN NWs. In addition, we fabricated light-emitting diodes (LEDs) from NW ensembles that were grown by means of self-organization phenomena on bare and on AlN-buffered Si substrates. A careful characterization of the optoelectronic properties of the two devices showed that the performance of NW-LEDs on bare and AlN-buffered Si is similar. Electrical conduction across the AlN buffer is facilitated by a high number of grain boundaries that were revealed by transmission electron microscopy. These results demonstrate that grainy AlN buffer layers on Si are compatible both with the SAG of GaN NWs and LED operation. Therefore, this study is a first step towards the fabrication of LEDs on Si substrates based on homogeneous NW ensembles.
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Submitted 28 October, 2014;
originally announced October 2014.
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Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Authors:
Mattia Musolino,
Abbes Tahraoui,
Friederich Limbach,
Jonas Lähnemann,
Uwe Jahn,
Oliver Brandt,
Lutz Geelhaar,
Henning Riechert
Abstract:
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices fabricated with either Ni/Au or indium tin oxide (ITO) top contact. The NW-LEDs with ITO exhibit a number density of NWs emitting electroluminescence about ten tim…
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We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices fabricated with either Ni/Au or indium tin oxide (ITO) top contact. The NW-LEDs with ITO exhibit a number density of NWs emitting electroluminescence about ten times higher, significantly lower turn-on voltage and series resistance, and a relative external quantum efficiency more than one order of magnitude higher than the sample with Ni/Au. These results show that limitations in the performance of such devices reported so far can be overcome by improving the p-type top-contact.
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Submitted 14 October, 2014;
originally announced October 2014.
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Picosecond strain dynamics in Ge$_{2}$Sb$_{2}$Te$_{5}$ monitored by time-resolved x-ray diffraction
Authors:
Paul Fons,
Peter Rodenbach,
Kirill V. Mitrofanov,
Alexander V. Kolobov,
Junji Tominaga,
Roman Shayduk,
Alessandro Giussani,
Raffaella Calarco,
Michael Hanke,
Henning Riechert,
Robert E. Simpson,
Muneaki Hase
Abstract:
Coherent phonons (CP) generated by laser pulses on the femtosecond scale have been proposed as a means to achieve ultrafast, non-thermal switching in phase-change materials such as Ge$_{2}$Sb$_{2}$Te$_{5}$(GST). Here we use ultrafast optical pump pulses to induce coherent acoustic phonons and stroboscopically measure the corresponding lattice distortions in GST using 100 ps x-ray pulses from the E…
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Coherent phonons (CP) generated by laser pulses on the femtosecond scale have been proposed as a means to achieve ultrafast, non-thermal switching in phase-change materials such as Ge$_{2}$Sb$_{2}$Te$_{5}$(GST). Here we use ultrafast optical pump pulses to induce coherent acoustic phonons and stroboscopically measure the corresponding lattice distortions in GST using 100 ps x-ray pulses from the ESRF storage ring. A linear-chain model provides a good description of the observed changes in the diffraction signal, however, the magnitudes of the measured shifts are too large to be explained by thermal effects alone implying the presence of transient non-equilibrium electron heating in addition to temperature driven expansion. The information on the movement of atoms during the excitation process can lead to greater insight into the possibilities of using CP-induced phase-transitions in GST.
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Submitted 24 September, 2014;
originally announced September 2014.
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The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
Authors:
Timo Schumann,
Martin Dubslaff,
Myriano H. Oliveira Jr.,
Michael Hanke,
J. Marcelo J. Lopes,
Henning Riechert
Abstract:
Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\sqrt{3})$R30$^\circ$ periodicity, a monolayer graphene (MLG) on top of the BL, and a bilayer graphene (BLG). The GID analysis was complemented by Raman spectroscopy. The lattice parameter of each layer was measured with…
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Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\sqrt{3})$R30$^\circ$ periodicity, a monolayer graphene (MLG) on top of the BL, and a bilayer graphene (BLG). The GID analysis was complemented by Raman spectroscopy. The lattice parameter of each layer was measured with high precision by GID. The BL possesses a different lattice parameter and corrugation when it is uncovered or beneath MLG. Our results demonstrate that the interfacial BL is the main responsible for the strain in MLG. By promoting its decoupling from the substrate via intercalation, it turns into graphene, leading to a simultaneous relaxation of the MLG and formation of a quasi-free-standing BLG.
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Submitted 24 June, 2014;
originally announced June 2014.
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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Authors:
F. Fromm,
M. H. Oliveira Jr,
A. Molina-Sánchez,
M. Hundhausen,
J. M. J. Lopes,
H. Riechert,
L. Wirtz,
T. Seyller
Abstract:
We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon…
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We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.
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Submitted 12 December, 2012; v1 submitted 7 December, 2012;
originally announced December 2012.
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Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
Authors:
Martin Wölz,
Jonas Lähnemann,
Oliver Brandt,
Vladimir M. Kaganer,
Manfred Ramsteiner,
Carsten Pfüller,
Christian Hauswald,
C. N. Huang,
Lutz Geelhaar,
Henning Riechert
Abstract:
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminesce…
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GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range from 2.2 eV to 2.5 eV depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.
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Submitted 29 October, 2012;
originally announced October 2012.
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Current path in light emitting diodes based on nanowire ensembles
Authors:
Friederich Limbach,
Christian Hauswald,
Jonas Lähnemann,
Martin Wölz,
Oliver Brandt,
Achim Trampert,
Michael Hanke,
Uwe Jahn,
Raffaella Calarco,
Lutz Geelhaar,
Henning Riechert
Abstract:
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased $μ$-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescen…
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Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased $μ$-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In,Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect.
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Submitted 26 October, 2012;
originally announced October 2012.
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Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
Authors:
Uwe Jahn,
Jonas Lähnemann,
Carsten Pfüller,
Oliver Brandt,
Steffen Breuer,
Bernd Jenichen,
Manfred Ramsteiner,
Lutz Geelhaar,
Henning Riechert
Abstract:
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that optical emission of such NWs occurs either predominantly above or below the band gap energy of ZB GaAs [E(g,ZB)]. This result is consistent with the assumption that the band gap energy of wurtzite GaAs [E(g,WZ)] is larger t…
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GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that optical emission of such NWs occurs either predominantly above or below the band gap energy of ZB GaAs [E(g,ZB)]. This result is consistent with the assumption that the band gap energy of wurtzite GaAs [E(g,WZ)] is larger than E(g,ZB) and that GaAs NWs with alternating ZB and WZ segments along the wire axis establish a type II band alignment, where electrons captured within the ZB segments recombine with holes of the neighboring WZ segments. Thus, the corresponding transition energy depends on the degree of confinement of the electrons, and transition energies exceeding E(g,ZB) are possible for very thin ZB segments. At low temperatures, the incorporation of carbon acceptors plays a major role in determining the spectral profile as these can effectively bind holes in the ZB segments. From cathodoluminescence measurements of single GaAs NWs performed at room temperature, we deduce a lower bound of 55 meV for the difference E(g,WZ)-E(g,ZB).
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Submitted 31 January, 2012;
originally announced January 2012.
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Silicon Nanowires, Catalytic Growth and Electrical Characterization
Authors:
Walter M. Weber,
Georg S. Duesberg,
Andrew P. Graham,
Maik Liebau,
Eugen Unger,
Caroline Cheze,
Lutz Geelhaar,
Paolo Lugli,
Henning Riechert,
Franz Kreupl
Abstract:
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field…
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Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 10 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 micrometer gate-length delivers as much as 0.15 microA on-current at 1 volt bias voltage and has an on/off current ratio of 10^7. This is in contrast to recent reports of low conductance in undoped Si.
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Submitted 13 September, 2006;
originally announced September 2006.
