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Ferrimagnetism induced by thermal vibrations in oxygen-deficient manganite heterostructures
Authors:
Moloud Kaviani,
Chiara Ricca,
Ulrich Aschauer
Abstract:
Super-exchange most often leads to antiferromagnetim in transition-metal perovskite oxides, yet ferromagnetism or ferrimagnetism would be preferred for many applications, for example in data storage. While alloying, epitaxial strain and defects were shown to lead to ferromagnetism, engineering this magnetic order remains a challenge. We propose, based on density functional theory calculations, a n…
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Super-exchange most often leads to antiferromagnetim in transition-metal perovskite oxides, yet ferromagnetism or ferrimagnetism would be preferred for many applications, for example in data storage. While alloying, epitaxial strain and defects were shown to lead to ferromagnetism, engineering this magnetic order remains a challenge. We propose, based on density functional theory calculations, a novel route to defect-engineer ferrimagnetism, which is based on preferential displacements of oxygen vacancies due to finite temperature vibrations. This mechanism has an unusual temperature dependence, as it is absent at 0K, strengthens with increasing temperature before vanishing once oxygen vacancies disorder, giving it a unique experimentally detectable signature.
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Submitted 7 May, 2024;
originally announced May 2024.
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Combined theoretical and experimental study of the Moiré dislocation network at the SrTiO$_3$-(La,Sr)(Al,Ta)O$_3$ interface
Authors:
Chiara Ricca,
Elizabeth Skoropata,
Marta D. Rossell,
Rolf Erni,
Urs Staub,
Ulrich Aschauer
Abstract:
Recently a highly ordered Moiré dislocation lattice was identified at the interface between a \ce{SrTiO3} (STO) thin film and the (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrate. A fundamental understanding of the local ionic and electronic structure around the dislocation cores is crucial to further engineer the properties of these complex multifunctional heterostructures. Here we c…
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Recently a highly ordered Moiré dislocation lattice was identified at the interface between a \ce{SrTiO3} (STO) thin film and the (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrate. A fundamental understanding of the local ionic and electronic structure around the dislocation cores is crucial to further engineer the properties of these complex multifunctional heterostructures. Here we combine experimental characterization via analytical scanning transmission electron microscopy with results of molecular dynamics and density functional theory calculations to gain insights into the structure and defect chemistry of these dislocation arrays. Our results show that these dislocations lead to undercoordinated Ta/Al cations at the dislocation core, where oxygen vacancies can easily be formed, further facilitated by the presence of cation vacancies. The reduced Ti$^{3+}$ observed experimentally at the dislocations by electron energy-loss spectroscopy are a consequence of both the structure of the dislocation itself, as well as of the electron-do** due to oxygen vacancy formation. Finally, the experimentally observed Ti diffusion into LSAT around the dislocation core occurs only together with cation-vacancy formation in LSAT or Ta diffusion into STO.
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Submitted 24 July, 2023;
originally announced July 2023.
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Conversion of La$_2$Ti$_2$O$_7$ to LaTiO$_2$N via Ammonolysis: An ab-initio Investigation
Authors:
Chiara Ricca,
Tristan Blandenier,
Valérie Werner,
Xing Wang,
Simone Pokrant,
Ulrich Aschauer
Abstract:
Perovskite oxynitrides are, due to their reduced band gap compared to oxides, promising materials for photocatalytic applications. They are most commonly synthesized from {110} layered Carpy-Galy (A$_2$B$_2$O$_7$}) perovskites via thermal ammonolysis, i.e. the exposure to a flow of ammonia at elevated temperature. The conversion of the layered oxide to the non-layered oxynitride must involve a com…
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Perovskite oxynitrides are, due to their reduced band gap compared to oxides, promising materials for photocatalytic applications. They are most commonly synthesized from {110} layered Carpy-Galy (A$_2$B$_2$O$_7$}) perovskites via thermal ammonolysis, i.e. the exposure to a flow of ammonia at elevated temperature. The conversion of the layered oxide to the non-layered oxynitride must involve a complex combination of nitrogen incorporation, oxygen removal and ultimately structural transition by elimination of the interlayer shear plane. Despite the process being commonly used, little is known about the microscopic mechanisms and hence factors that could ease the conversion. Here we aim to derive such insights via density functional theory calculations of the defect chemistry of the oxide and the oxynitride as well as the oxide's surface chemistry. Our results point to the crucial role of surface oxygen vacancies in forming clusters of NH$_3$ decomposition products and in incorporating N, most favorably substitutionally at the anion site. N then spontaneously diffuses away from the surface, more easily parallel to the surface and in interlayer regions, while diffusion perpendicular to the interlayer plane is somewhat slower. Once incorporation and diffusion lead to a local N concentration of about 70% of the stoichiometric oxynitride composition, the nitridated oxide spontaneously transforms to a nitrogen-deficient oxynitride.
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Submitted 2 May, 2023; v1 submitted 21 April, 2023;
originally announced April 2023.
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Photochemical Anisotropy and Direction-dependent Optical Absorption in Semiconductors
Authors:
Chiara Ricca,
Ulrich Aschauer
Abstract:
Photochemical reactions on semiconductors are anisotropic, since they occur with different rates on surfaces of different orientation. Understanding the origin of this anisotropy is crucial to engineering more efficient photocatalysts. In this work, we use hybrid density functional theory (DFT) to identify the surfaces associated with the largest number of photo-generated carriers in different sem…
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Photochemical reactions on semiconductors are anisotropic, since they occur with different rates on surfaces of different orientation. Understanding the origin of this anisotropy is crucial to engineering more efficient photocatalysts. In this work, we use hybrid density functional theory (DFT) to identify the surfaces associated with the largest number of photo-generated carriers in different semiconductors. For each material we create a spherical heat map of the probability of optical transitions at different wave vectors. These maps allow to identify the directions associated with the majority of the photo-generated carriers and can thus be used to make predictions about the most reactive surfaces for photochemical applications. Results indicate that it is generally possible to correlate the heat maps with the anisotropy of the bands observed in conventional band-structure plots, as previously suggested. However, we also demonstrate that conventional bands-structure plots do not always provide all the informations and that taking into account the contribution of all possible transitions weighted by their transition dipole moments is crucial to obtain a complete picture.
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Submitted 2 February, 2022;
originally announced February 2022.
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Interplay between polarization, strain and defect-pairs in Fe-doped SrMnO$_{3-δ}$
Authors:
Chiara Ricca,
Ulrich Aschauer
Abstract:
Defect chemistry, strain, and structural, magnetic and electronic degrees of freedom constitute a rich space for the design of functional properties in transition metal oxides. Here, we show that it is possible to engineer polarity and ferroelectricity in non-polar perovskite oxides via polar defect pairs formed by anion vacancies coupled to substitutional cations. We use a self-consistent site-de…
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Defect chemistry, strain, and structural, magnetic and electronic degrees of freedom constitute a rich space for the design of functional properties in transition metal oxides. Here, we show that it is possible to engineer polarity and ferroelectricity in non-polar perovskite oxides via polar defect pairs formed by anion vacancies coupled to substitutional cations. We use a self-consistent site-dependent DFT+$U$ approach that accounts for local structural and chemical changes upon defect creation and which is crucial to reconcile predictions with the available experimental data. Our results for Fe-doped oxygen-deficient SrMnO$_3$ show that substitutional Fe and oxygen vacancies can promote polarity due to an off-center displacement of the defect charge resulting in a net electric dipole moment, which polarizes the lattice in the defect neighborhood. The formation of these defects and the resulting polarization can be tuned by epitaxial strain, resulting in enhanced polarization also for strain values lower than the ones necessary to induce a polar phase transition in undoped SrMnO$_3$. For high enough defect concentrations, these defect dipoles couple in a parallel fashion, thus enabling defect- and strain-based engineering of ferroelectricity in SrMnO$_3$.
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Submitted 25 June, 2021;
originally announced June 2021.
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Ferroelectricity promoted by cation/anion divacancies in SrMnO$_3$
Authors:
Chiara Ricca,
Danielle Berkowitz,
Ulrich Aschauer
Abstract:
We investigate the effect of polar Sr-O vacancy pairs on the electric polarization of SrMnO$_3$ (SMO) thin films using density functional theory (DFT) calculations. This is motivated by indications that ferroelectricity in complex oxides can be engineered by epitaxial strain but also \textit{via} the defect chemistry. Our results suggest that intrinsic do** by cation and anion divacancies can in…
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We investigate the effect of polar Sr-O vacancy pairs on the electric polarization of SrMnO$_3$ (SMO) thin films using density functional theory (DFT) calculations. This is motivated by indications that ferroelectricity in complex oxides can be engineered by epitaxial strain but also \textit{via} the defect chemistry. Our results suggest that intrinsic do** by cation and anion divacancies can induce a local polarization in unstrained non-polar SMO thin films and that a ferroelectric state can be stabilized below the critical strain of the stoichiometric material. This polarity is promoted by the electric dipole associated with the defect pair and its coupling to the atomic relaxations upon defect formation that polarize a region around the defect. This suggests that polar defect pairs affect the strain-dependent ferroelectricity in semiconducting antiferromagnetic SMO. For metallic ferromagnetic SMO we find a much weaker coupling between the defect dipole and the polarization due to much stronger electronic screening. Coupling of defect-pair dipoles at high enough concentrations along with their switchable orientation thus makes them a promising route to affect the ferroelectric transition in complex transition metal oxide thin films.
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Submitted 19 May, 2021;
originally announced May 2021.
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Importance of surface oxygen vacancies for ultrafast hot carrier relaxation and transport in Cu$_2$O
Authors:
Chiara Ricca,
Lisa Grad,
Matthias Hengsberger,
Jürg Osterwalder,
Ulrich Aschauer
Abstract:
Cu$_2$O has appealing properties as an electrode for photo-electrochemical water splitting, yet its practical performance is severely limited by inefficient charge extraction at the interface. Using hybrid DFT calculations, we investigate carrier capture processes by oxygen vacancies (V$_\mathrm{O}$) in the experimentally observed ($\sqrt{3} \times \sqrt{3}$)R30$^{\circ}$ reconstruction of the dom…
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Cu$_2$O has appealing properties as an electrode for photo-electrochemical water splitting, yet its practical performance is severely limited by inefficient charge extraction at the interface. Using hybrid DFT calculations, we investigate carrier capture processes by oxygen vacancies (V$_\mathrm{O}$) in the experimentally observed ($\sqrt{3} \times \sqrt{3}$)R30$^{\circ}$ reconstruction of the dominant (111) surface. Our results show that these V$_\mathrm{O}$ are doubly ionized and that associated defects states strongly suppress electron transport. In particular, the excited electronic state of a singly charged V$_\mathrm{O}$ plays a crucial role in the non-radiative electron capture process with a capture coefficient of about 10$^{-9}$~cm$^3$/s and a lifetime of 0.04~ps, explaining the experimentally observed ultrafast carrier relaxation. These results highlight that engineering the surface V$_\mathrm{O}$ chemistry will be a crucial step in optimizing Cu$_2$O for photoelectrode applications.
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Submitted 8 March, 2021; v1 submitted 4 March, 2021;
originally announced March 2021.
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Local polarization in oxygen-deficient LaMnO$_3$ induced by charge localization in the Jahn-Teller distorted structure
Authors:
Chiara Ricca,
Nicolas Niederhauser,
Ulrich Aschauer
Abstract:
The functional properties of transition metal perovskite oxides are known to result from a complex interplay of magnetism, polarization, strain, and stoichiometry. Here, we show that for materials with a cooperative Jahn-Teller distortion, such as LaMnO$_3$ (LMO), the orbital order can also couple to the defect chemistry and induce novel material properties. At low temperatures, LMO exhibits a str…
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The functional properties of transition metal perovskite oxides are known to result from a complex interplay of magnetism, polarization, strain, and stoichiometry. Here, we show that for materials with a cooperative Jahn-Teller distortion, such as LaMnO$_3$ (LMO), the orbital order can also couple to the defect chemistry and induce novel material properties. At low temperatures, LMO exhibits a strong Jahn-Teller distortion that splits the $e_g$ orbitals of the high-spin Mn$^{3+}$ ions and leads to alternating long, short, and intermediate Mn--O bonds. Our DFT+$U$ calculations show that, as a result of this orbital order, the charge localization in LMO upon oxygen vacancy formation differs from other manganites, like SrMnO$_3$, where the two extra electrons reduce the two Mn sites adjacent to the vacancy. In LMO, relaxations around the defect depend on which type of Mn--O bond is broken, affecting the $d$-orbital energies and leading to asymmetric and hence polar excess-electron localization with respect to the vacancy. Moreover, we show that the Mn--O bond lengths, orbital order and consequently the charge localization and polarity are tunable via strain.
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Submitted 23 February, 2020;
originally announced February 2020.
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Self-consistent DFT+$U$+$V$ study of oxygen vacancies in SrTiO$_3$
Authors:
Chiara Ricca,
Iurii Timrov,
Matteo Cococcioni,
Nicola Marzari,
Ulrich Aschauer
Abstract:
Contradictory theoretical results for oxygen vacancies in SrTiO$_3$ (STO) were often related to the peculiar properties of STO, which is a $d^0$ transition metal oxide with mixed ionic-covalent bonding. Here, we apply, for the first time, density functional theory (DFT) within the extended Hubbard DFT+$U$+$V$ approach, including on-site as well as inter-site electronic interactions, to study oxyge…
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Contradictory theoretical results for oxygen vacancies in SrTiO$_3$ (STO) were often related to the peculiar properties of STO, which is a $d^0$ transition metal oxide with mixed ionic-covalent bonding. Here, we apply, for the first time, density functional theory (DFT) within the extended Hubbard DFT+$U$+$V$ approach, including on-site as well as inter-site electronic interactions, to study oxygen-deficient STO with Hubbard $U$ and $V$ parameters computed self-consistently via density-functional perturbation theory. Our results demonstrate that the extended Hubbard functional is a promising approach to study defects in materials with electronic properties similar to STO. Indeed, DFT+$U$+$V$ provides a better description of stoichiometric STO compared to standard DFT or DFT+$U$, the band gap and crystal field splitting being in good agreement with experiments. In turn, also the description of the electronic properties of oxygen vacancies in STO is improved, with formation energies in excellent agreement with experiments as well as results obtained with the most frequently used hybrid functionals, however at a fraction of the computational cost. While our results do not fully resolve the contradictory findings reported in literature, our systematic approach leads to a deeper understanding of their origin, which stems from different cell sizes, STO phases, the exchange-correlation functional, and the treatment of structural relaxations and spin-polarization.
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Submitted 23 January, 2020; v1 submitted 17 January, 2020;
originally announced January 2020.
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Self-consistent site-dependent DFT+$U$ study of stoichiometric and defective SrMnO$_3$
Authors:
Chiara Ricca,
Iurii Timrov,
Matteo Cococcioni,
Nicola Marzari,
Ulrich Aschauer
Abstract:
We propose a self-consistent site-dependent Hubbard $U$ approach for DFT+$U$ calculations of defects in complex transition-metal oxides, using Hubbard parameters computed via linear-response theory. The formation of a defect locally perturbs the chemical environment of Hubbard sites in its vicinity, resulting in different Hubbard $U$ parameters for different sites. Using oxygen vacancies in SrMnO…
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We propose a self-consistent site-dependent Hubbard $U$ approach for DFT+$U$ calculations of defects in complex transition-metal oxides, using Hubbard parameters computed via linear-response theory. The formation of a defect locally perturbs the chemical environment of Hubbard sites in its vicinity, resulting in different Hubbard $U$ parameters for different sites. Using oxygen vacancies in SrMnO$_3$ as a model system, we investigate the dependence of $U$ on the chemical environment and study its influence on the structural, electronic, and magnetic properties of defective bulk and strained thin-film structures. Our results show that a self-consistent $U$ improves the description of stoichiometric bulk SrMnO$_3$ with respect to GGA or GGA+$U$ calculations using an empirical $U$. For defective systems, $U$ changes as a function of the distance of the Hubbard site from the defect, its oxidation state and the magnetic phase of the bulk structure. Taking into account this dependence, in turn, affects the computed defect formation energies and the predicted strain- and/or defect-induced magnetic phase transitions, especially when occupied localized states appear in the band gap of the material upon defect creation.
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Submitted 3 April, 2019; v1 submitted 27 November, 2018;
originally announced November 2018.
