High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Authors:
Fuyou Liao,
Zhongxun Guo,
Yin Wang,
Yufeng Xie,
Simeng Zhang,
Yaochen Sheng,
Hongwei Tang,
Zihan Xu,
Antoine Riaud,
Peng Zhou,
**g Wan,
Michael S. Fuhrer,
Xiangwei Jiang,
David Wei Zhang,
Yang Chai,
Wenzhong Bao
Abstract:
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structu…
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In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics.
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Submitted 17 December, 2019;
originally announced December 2019.
On-demand contact line pinning during droplet evaporation
Authors:
Wei Wang,
Qi Wang,
Kaidi Zhang,
Xubo Wang,
Antoine Riaud,
Jia Zhou
Abstract:
Depending on the contact line motion, colloid-rich drolets evaporation can leave a ring-like or a spot-like residue. Herein, we determine this outcome by controlling the contact line motion using coplanar direct current electrowetting-on-dielectrics (DC-EWOD). Combined with theoretical calculations of the droplet shape and its evaporation rate, the time-dependent actuation voltage is first derived…
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Depending on the contact line motion, colloid-rich drolets evaporation can leave a ring-like or a spot-like residue. Herein, we determine this outcome by controlling the contact line motion using coplanar direct current electrowetting-on-dielectrics (DC-EWOD). Combined with theoretical calculations of the droplet shape and its evaporation rate, the time-dependent actuation voltage is first derived from experiments and simulations. Thanks to the additional control over the contact angle, the contact line can be maintained in pinned state even on surfaces that exhibit little contact angle hysteresis such as homogenous flat Teflon coatings. In the absence of EWOD control, polystyrene particles and Escherichia coli suspended in the droplet formed a dot-like pattern at the center of the initial contact, whereas application of the mechanism resulted in ring-like patterns of a controllable radius. Unlike chemically or structurally patterned substrates, the contact line could recover its mobility at any preset time before reaching the control limit, which is useful to accurately and consistently fabricate self-assembled nanostructures of desired patterns on different surfaces.
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Submitted 15 May, 2019;
originally announced May 2019.
