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Effect of Co Substitution on Ferrimagnetic Heusler compound Mn3Ga
Authors:
Quynh Anh T. Nguyen,
Thi H. Ho,
Myung-Hwa Jung,
Sonny H. Rhim
Abstract:
Effect of Co substitution on Mn$_3$Ga is investigated using first-principles study for structural and magnetic properties. Without Co, ferrimagnetic Heusler compound Mn3Ga is in tetragonal phase. With Co substitution, depending on Co concentration (x) Mn$_3$Ga prefers tetragonal (cubic) phase when x \leq 0.5 (x \geq 0.5). Ferrimagnetism is robust regardless of x in both phases. While magnetic mome…
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Effect of Co substitution on Mn$_3$Ga is investigated using first-principles study for structural and magnetic properties. Without Co, ferrimagnetic Heusler compound Mn3Ga is in tetragonal phase. With Co substitution, depending on Co concentration (x) Mn$_3$Ga prefers tetragonal (cubic) phase when x \leq 0.5 (x \geq 0.5). Ferrimagnetism is robust regardless of x in both phases. While magnetic moments of two Mn do not vary significantly with x, Co magnetic moment in two phases exhibit different behaviors, leading to distinct features in total magnetic moment (M_{tot}). When x \leq 0.5, in tetragonal phase, Co magnetic moment is vanishingly small, resulting in a decrease of M_{tot} with x. In contrast, when x \geq 0.5, in cubic phase, Co magnetic moment is roughly 1$μ_B$, which is responsible for an increase of Mtot. Electronic structure is analyzed with partial density of states for various x. To elucidate the counterintuitively small Co moment, the magnetic exchange interaction is investigated where exchange coefficient between Co and Mn is much smaller in x \leq 0.5 case than x \geq 0.5 one.
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Submitted 21 September, 2022;
originally announced September 2022.
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Spin-Orbit Torque Engineering in β-W/CoFeB Heterostructures via Ta and V Alloying at Interfaces
Authors:
Gyu Won Kim,
Do Duc Cuong,
Yong ** Kim,
In Ho Cha,
Taehyun Kim,
Min Hyeok Lee,
OukJae Lee,
Hionsuck Baik,
Soon Cheol Hong,
Sonny H. Rhim,
Young Keun Kim
Abstract:
Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice, materials with a high spin Hall angle, i.e., a charge-to-spin conversion efficiency, are indispensable. To date, very few approaches have been made to devise new nonma…
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Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice, materials with a high spin Hall angle, i.e., a charge-to-spin conversion efficiency, are indispensable. To date, very few approaches have been made to devise new nonmagnetic metal alloys. Moreover, new materials need to be compatible with semiconductor processing. Here we introduce W-Ta and W-V alloys and deploy them at the interface between $β$-W/CoFeB layers. First, spin Hall conductivities of W-Ta and W-V structures with various compositions are carried out by first-principles band calculations, which predict the spin Hall conductivity of the W-V alloy is improved from $-0.82 \times 10^3$ S/cm that of W to $-1.98 \times 10^3$ S/cm. Subsequently, heterostructure fabrication and spin-orbit torque properties are characterized experimentally. By alloying $β$-W with V at a concentration of 20 at%, we observe a large enhancement of the absolute value of spin Hall conductivity of up to $-(2.77 \pm 0.31) \times 10^3$ S/cm. By employing X-ray diffraction and scanning transmission electron microscopy, we further explain the enhancement of spin-orbit torque efficiency is stemmed from W-V alloy between W and CoFeB.
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Submitted 9 June, 2021;
originally announced June 2021.
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Enhanced voltage-controlled magnetic anisotropy via magneto-elasticity in FePt/MgO(001)
Authors:
Qurat-ul-ain,
Dorj Odkhuu,
S. H. Rhim,
Soon Cheol Hong
Abstract:
The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal electric field in the heterostructure. As a prototype, FePt/MgO(001) is visited, where the behavior of two interfaces are drastically different: one exhibits switch…
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The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal electric field in the heterostructure. As a prototype, FePt/MgO(001) is visited, where the behavior of two interfaces are drastically different: one exhibits switching the other does not. Whether an external electric field ($E_{ext}$) is present or not, we found VCMA coefficient larger than 1 pJ/V$\cdot$m, as a consequence of the rearrangement of $d$ orbitals with $m=\pm1$ and $\pm2$ in response to an external electric field. In addition, magneto-crystalline anisotropy (MA) is analyzed with strain taken into account, where non-linear feature is presented only accountable by invoking second-order MEL.
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Submitted 6 January, 2020;
originally announced January 2020.
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Tunability of Magnetic Anisotropy of Co on Two-Dimensional Materials by Tetrahedral Bonding
Authors:
D. Odkhuu,
T. Tsevelmaa,
P. Taivansaikhan,
N. Park,
S. C. Hong,
S. H. Rhim
Abstract:
Pairing of $π$ electronic state structures with functional or metallic atoms makes them possible to engineer physical and chemical properties. Herein, we predict the reorientation of magnetization of Co on hexagonal BN (h-BN) and graphene multilayers. The driving mechanism is the formation of the tetrahedral bonding between sp$^3$ and d orbitals at the interface. More specifically, the intrinsic…
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Pairing of $π$ electronic state structures with functional or metallic atoms makes them possible to engineer physical and chemical properties. Herein, we predict the reorientation of magnetization of Co on hexagonal BN (h-BN) and graphene multilayers. The driving mechanism is the formation of the tetrahedral bonding between sp$^3$ and d orbitals at the interface. More specifically, the intrinsic $π$-bonding of h-BN and graphene is transformed to sp$^3$ as a result of strong hybridization with metallic $d_{z^2}$ orbital. The different features of these two tetrahedral bondings, sp$^2$ and sp$^3$, are well manifested in charge density and density of states in the vicinity of the interface, along with associated band structure near the $\bar{K}$ valley. Our findings provide a novel approach to tailoring magnetism by means of degree of the interlayer hybrid bonds in 2D layered materials.
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Submitted 11 January, 2019;
originally announced January 2019.
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Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3
Authors:
Yongsu Kwak,
Woojoo Han,
Thach D. N. Ngo,
Dorj Odkhuu,
Jihwan Kim,
Young Heon Kim,
Noejung Park,
Sonny H. Rhim,
Myung-Hwa Jung,
Junho Suh,
Seung-Bo Shim,
Mahn-Soo Choi,
Yong-Joo Doh,
Joon Sung Lee,
Jonghyun Song,
**hee Kim
Abstract:
To form a conducting layer at the interface between the oxide insulators LaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at least four unit-cells-thick. The LaAlO3 SrTiO3 heterointerface thus formed exhibits various intriguing phenomena such as ferromagnetism and superconductivity. It has been widely studied for being a low-dimensional ferromagnetic oxide superconducting system…
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To form a conducting layer at the interface between the oxide insulators LaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at least four unit-cells-thick. The LaAlO3 SrTiO3 heterointerface thus formed exhibits various intriguing phenomena such as ferromagnetism and superconductivity. It has been widely studied for being a low-dimensional ferromagnetic oxide superconducting system with a strong gate-tunable spin-orbit interaction. However, its lack of stability and environmental susceptiveness have been an obstacle to its further experimental investigations and applications. Here, we demonstrate that cap** the bilayer with SrTiO3 relieves this thickness limit, while enhancing the stability and controllability of the interface. In addition, the SrTiO3-capped LaAlO3 exhibits unconventional superconductivity; the critical current dramatically increases under a parallel magnetic field, and shows a reversed hysteresis contrary to the conventional hysteresis of magnetoresistance. Its superconducting energy gap of $Δ\sim 1.31k_BT_c$ also deviates from conventional BCS-type superconductivity. The oxide trilayer could be a robust platform for studying the extraordinary interplay of superconductivity and ferromagnetism at the interface electron system between LaAlO3 and SrTiO3.
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Submitted 24 January, 2018;
originally announced January 2018.
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Giant Enhancement of Intrinsic Spin Hall Conductivity in $β$ Tungsten via Substitutional Do**
Authors:
Xuelei Sui,
Chong Wang,
**woong Kim,
Jianfeng Wang,
S. H. Rhim,
Wenhui Duan,
Nicholas Kioussis
Abstract:
A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure calculations reveal that the intrinsic spin Hall conductivity (SHC) for pristine $β$-W is about sixty percent larger than that of $α$-W. More importantly, we demonstrate…
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A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure calculations reveal that the intrinsic spin Hall conductivity (SHC) for pristine $β$-W is about sixty percent larger than that of $α$-W. More importantly, we demonstrate that the SHC of $β$-W can be enhanced via Ta alloying. This is corroborated by spin Berry curvature calculations of W$_{1-x}$Ta$_x$ ($x$ $\sim$ 12.5%) alloys which show a giant enhancement of spin Hall angle of up to $\approx$ $-0.5$. The underlying mechanism is the synergistic behavior of the SHC and longitudinal conductivity with Fermi level position. These findings, not only pave the way for enhancing the intrinsic spin Hall effect in $β$-W, but also provide new guidelines to exploit substitutional alloying to tailor the spin Hall effect in various materials.
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Submitted 14 December, 2017;
originally announced December 2017.
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Inducing and Manipulating Magnetization in Two-Dimensional ZnO by Strain and External Gating
Authors:
P. Taivansaikhan,
T. Tsevelmaa,
S. H. Rhim,
S. C. Hong,
D. Odkhuu
Abstract:
Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In…
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Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We further predict that the direction of magnetization easy axis reverses from an in-plane to perpendicular orientation under a practically achieved biaxial compressive strain of $\sim$1--2\% or applying an electric-field by means of the charge density modulation. This magnetization reversal is driven by the strain- and electric-field-induced changes in the spin-orbit coupled \emph{d} states of the first-neighbor Zn atom to the Zn-vacancy. These findings open interesting prospects for exploiting strain and electric-field engineering to manipulate magnetism and magnetization orientation of two-dimensional materials.
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Submitted 5 December, 2017;
originally announced December 2017.
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Density Functional Theory study on the electronic structure and thermoelectric properties of strained Mn4Si7
Authors:
Do Duc Cuong,
**Sik Park,
S. H. Rhim,
Soon Cheol Hong
Abstract:
The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the tensile strain attempts to reduce the band gap while the compressive strain not much affect to band gap. The Seebeck coeficient was found to be increased with in…
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The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the tensile strain attempts to reduce the band gap while the compressive strain not much affect to band gap. The Seebeck coeficient was found to be increased with increasing temperature, which is very consistent to experiments. The electrical conductivity and power factor show highly degree of anisotropy, where in-plane direction is more dominant. The different behavior of electrical conductivity along in-plane and outof plane direction was explained due to the change of band dispersion in the valence band maximum (VBM).
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Submitted 12 May, 2016;
originally announced May 2016.
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Superconductivity in CuCl/Si: possible excitonic pairing?
Authors:
S. H. Rhim,
Rolando Saniz,
M. Weinert,
A. J. Freeman
Abstract:
The search for superconductivity with higher transition temperature ($T_C$) has long been a challenge in research efforts ever since its first discovery in 1911. The effort has led to the discovery of various kinds of superconductors and progress in the understanding of this intriguing phenomenon. The increase of $T_C$ has also evolved; however, the dream of realizing room-temperature superconduct…
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The search for superconductivity with higher transition temperature ($T_C$) has long been a challenge in research efforts ever since its first discovery in 1911. The effort has led to the discovery of various kinds of superconductors and progress in the understanding of this intriguing phenomenon. The increase of $T_C$ has also evolved; however, the dream of realizing room-temperature superconductivity is far from reality. For superconductivity to emerge, the effective quasiparticle interaction should overcome the repulsive Coulomb interaction. This can be realized via lattice or spin degrees of freedom. An alternative pairing mechanism, the excitonic mechanism, was proposed 50 years ago, ho** to achieve higher $T_C$ than by phonon mediation. As none of physics principles has ever prevented excitonic pairing, the excitonic pairing mechanism is revisited here and we show that the effective quasiparticle interaction without lattice and spin can be attractive solely electronically.
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Submitted 6 October, 2016; v1 submitted 13 October, 2015;
originally announced October 2015.
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Theory of perpendicular magnetocrystalline anisotropy in Fe/MgO (001)
Authors:
Dorj Odkhuu,
Won Seok Yun,
S. H. Rhim,
Soon-Cheol Hong
Abstract:
The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the large PMCA as claimed in previous study. Instead, perfect epitaxy of Fe on the MgO is more important to achieve such large PMCA. As an evidence, we show that th…
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The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the large PMCA as claimed in previous study. Instead, perfect epitaxy of Fe on the MgO is more important to achieve such large PMCA. As an evidence, we show that the surface layer in a clean free-standing Fe (001) dominantly contributes to $E_{MCA}$, while in the Fe/MgO, those by the surface and the interface Fe layers contribute almost equally. The presence of MgO does not change positive contribution from $\langle xz|\ell_Z|yz\rangle$, whereas it reduces negative contribution from $\langle z^2|\ell_X|yz\rangle$ and $\langle xy|\ell_X|xz,yz\rangle$.
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Submitted 24 July, 2015;
originally announced July 2015.
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External Modulation and Switching of Acoustic Phonons: Comparative Roles of Potential Distributions
Authors:
H. Jeong,
Y. D. Jho,
S. H. Rhim,
K. J. Yee,
J. P. Shim,
D. S. Lee,
J. W. Ju,
J. H. Baek,
C. J. Stanton
Abstract:
Acoustic phonons can be coherently generated by ultrafast displacive screening of potential gradients, often enhanced by the strong built-in piezoelectric fields, in wurtzite semiconductors. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and only longitudinal acoustic (LA) mode is generated. We show that e…
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Acoustic phonons can be coherently generated by ultrafast displacive screening of potential gradients, often enhanced by the strong built-in piezoelectric fields, in wurtzite semiconductors. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and only longitudinal acoustic (LA) mode is generated. We show that even for c-GaN, the application of asymmetric potential distributions in the c plane can break the symmetry and selection rules, thus switching on the normally forbidden TA mode. This is in contrast to the LA mode, the strength of which varies with the symmetric potential distributions. By comparing transient differential reflectivity spectra in structures with and without asymmetric potential distributions, the role of the electrically attained anisotropy was further revealed by the digitized appearance of the TA mode, in clear contrast to the monotonic LA mode, and by modulations in the propagation velocities, optical birefringence, and geometrically varying sensitivities, the underlying mechanisms of which are modeled by electric-field-dependent perturbations of the dielectric tensors, incorporating the results of elastic modulations.
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Submitted 25 June, 2015;
originally announced June 2015.
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Surface-termination dependent magnetism and strong perpendicular magnetocrystalline anisotropy of a FeRh (001) thin film: A density-functional study
Authors:
Soyoung Jekal,
S. H. Rhim,
Soon Cheol Hong,
Won-joon Son,
Alexander B. Shick
Abstract:
Magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While magnetic ground state of bulk FeRh is G-type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular MCA whose energy +2.1 meV/$\Box$ is two orders of magnitude greater than 3$d$ magnetic metals, where $\Box$ is area of two-dimensional unit cell. While Goodenough-Ka…
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Magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While magnetic ground state of bulk FeRh is G-type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular MCA whose energy +2.1 meV/$\Box$ is two orders of magnitude greater than 3$d$ magnetic metals, where $\Box$ is area of two-dimensional unit cell. While Goodenough-Kanamori-Anderson rule on the superexchange interaction is crucial in determining the magnetic ground phases of FeRh bulk and thin films, the magnetic phases are results of interplay and competition between three mechanisms - the superexchange interaction, the Zener direct-interaction, and magnetic energy gain.
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Submitted 17 May, 2015; v1 submitted 28 April, 2015;
originally announced April 2015.
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Strain-induced Giant Second-harmonic Generation in Monolayered $2H$-MoX$_2$ (X=S,Se,Te)
Authors:
S. H. Rhim,
Yong Soo Kim,
A. J. Freeman
Abstract:
Dynamic second-order nonlinear susceptibilities, $χ^{(2)}(2ω,ω,ω)\equiv χ^{(2)}(ω)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $χ^{(2)}(ω)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $χ^{(2)}(0)\sim$ 140 pm/V for MoTe…
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Dynamic second-order nonlinear susceptibilities, $χ^{(2)}(2ω,ω,ω)\equiv χ^{(2)}(ω)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $χ^{(2)}(ω)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $χ^{(2)}(0)\sim$ 140 pm/V for MoTe$_2$ in the static limit. Under this uniform in-plane stress, $2H$-MoX$_2$ can undergo direct-to-indirect transition of band gaps, which in turn substantially affects $χ^{(2)}(ω)$. The tunability of $χ^{(2)}(ω)$ by either compressive or tensile strain is demonstrated especially for two important experimental wavelengths, 1064 nm and 800 nm, where resonantly enhanced non-linear effects can be exploited: $χ^{(2)}$ of MoSe$_2$ and MoTe$_2$ approach $\sim$800 pm/V with -2\% strain at 1064 nm.
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Submitted 3 November, 2015; v1 submitted 20 April, 2015;
originally announced April 2015.
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La displacement driven Double-exchange like mediation in Titanium $d_{xy}$ ferromagnetism at the LaAlO$_3$/SrTiO$_3$
Authors:
Dorj Odkhuu,
S. H. Rhim,
Dongbin Shin,
Noejung Park
Abstract:
The epitaxial atomistic interfaces of two insulating oxides, LaAlO$_3$ (LAO)/SrTiO$_3$ (STO), have attracted great interest owing to rich emergent phenomena \cite{hwang12:nmat,coey13:mrs,ohtomo04:} such as interface metallicity \cite{ohtomo04:,nakagawa06:}, thickness dependent insulator-metal transition \cite{huijben06:nmat}, superconductivity \cite{N.Reyren08312007}, ferromagnetism \cite{brinkman…
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The epitaxial atomistic interfaces of two insulating oxides, LaAlO$_3$ (LAO)/SrTiO$_3$ (STO), have attracted great interest owing to rich emergent phenomena \cite{hwang12:nmat,coey13:mrs,ohtomo04:} such as interface metallicity \cite{ohtomo04:,nakagawa06:}, thickness dependent insulator-metal transition \cite{huijben06:nmat}, superconductivity \cite{N.Reyren08312007}, ferromagnetism \cite{brinkman.07:natmat}, and even their coexistence \cite{bert11:nphys,li11:nphys,dikin11:prl}. However, the physics origin of ferromagnetic ordering in the $n$-type LAO/STO interface is in debate. Here we propose that the polar distortion of La atom can ignite the ferromagnetism at the interface even without oxygen vacancy. The induced hybridization between La $d_{z^2}$ and O $p_{x,y}$ states can mediate double-exchange like interaction between Ti $d_{xy}$ electrons. We further suggest that the structural and electrical modification of the outermost surface of LAO or switching the polarization direction of ferroelectric overlayers on LAO/STO can promote such La displacement.
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Submitted 16 January, 2015;
originally announced January 2015.
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Jahn-Teller driven perpendicular magnetocrystalline anisotropy in metastable Ruthenium
Authors:
Dorj Odkhuu,
S. H. Rhim,
N. Park,
Kohji Nakamura,
S. C. Hong
Abstract:
A new metastable phase of the body-centered-tetragonal ruthenium ({\em bct}--Ru) is identified to exhibit a large perpendicular magnetocrystalline anisotropy (PMCA), whose energy, $E_{MCA}$, is as large as 150 $μ$eV/atom, two orders of magnitude greater than those of 3$d$ magnetic metals. Further investigation over the range of tetragonal distortion suggests that the appearance of the magnetism in…
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A new metastable phase of the body-centered-tetragonal ruthenium ({\em bct}--Ru) is identified to exhibit a large perpendicular magnetocrystalline anisotropy (PMCA), whose energy, $E_{MCA}$, is as large as 150 $μ$eV/atom, two orders of magnitude greater than those of 3$d$ magnetic metals. Further investigation over the range of tetragonal distortion suggests that the appearance of the magnetism in the {\em bct}--Ru is governed by the Jahn-Teller spit $e_g$ orbitals. Moreover, from band analysis, MCA is mainly determined by an interplay between two $e_g$ states, $d_{x^2-y^2}$ and $d_{z^2}$ states, as a result of level reversal associated with tetragonal distortion.
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Submitted 16 January, 2015; v1 submitted 2 May, 2014;
originally announced May 2014.
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Role of spin-orbit coupling on the electronic structure and properties of SrPtAs
Authors:
S. J. Youn,
S. H. Rhim,
D. F. Agterberg,
M. Weinert,
A. J. Freeman
Abstract:
The effect of spin-orbit coupling on the electronic structure of the layered iron-free pnictide superconductor, SrPtAs, has been studied using the full potential linearized augmented plane wave method. The anisotropy in Fermi velocity, conductivity and plasma frequency stemming from the layered structure are found to be enhanced by spin-orbit coupling. The relationship between spin-orbit interacti…
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The effect of spin-orbit coupling on the electronic structure of the layered iron-free pnictide superconductor, SrPtAs, has been studied using the full potential linearized augmented plane wave method. The anisotropy in Fermi velocity, conductivity and plasma frequency stemming from the layered structure are found to be enhanced by spin-orbit coupling. The relationship between spin-orbit interaction and the lack of two-dimensional inversion in the PtAs layers is analyzed within a tight-binding Hamiltonian based on the first-principles calculations. Finally, the band structure suggests that electron do** could increase $T_c$.
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Submitted 8 February, 2012;
originally announced February 2012.
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Hexagonal pnictide SrPtAs: superconductivity with locally broken inversion symmetry
Authors:
S. J. Youn,
M. H. Fischer,
S. H. Rhim,
M. Sigrist,
D. F. Agterberg
Abstract:
Unlike other pnictides, SrPtAs has a hexagonal structure, containing layers with As-Pt atoms that form a honeycomb lattice. These layers lack inversion symmetry which allows for a spin-orbit coupling that we show has a dramatic effect on superconductivity in this material. In particular, for conventional s-wave superconductivity in SrPtAs, both the spin susceptibility and the paramagnetic limiting…
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Unlike other pnictides, SrPtAs has a hexagonal structure, containing layers with As-Pt atoms that form a honeycomb lattice. These layers lack inversion symmetry which allows for a spin-orbit coupling that we show has a dramatic effect on superconductivity in this material. In particular, for conventional s-wave superconductivity in SrPtAs, both the spin susceptibility and the paramagnetic limiting field are enhanced significantly with respect to that usually expected for s-wave superconductors. SrPtAs provides a prime example of a superconductor with locally broken inversion symmetry.
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Submitted 21 November, 2011;
originally announced November 2011.
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Epitaxial graphene on SiC(0001): More than just honeycombs
Authors:
Y. Qi,
S. H. Rhim,
G. F. Sun,
M. Weinert,
L. Li
Abstract:
The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the…
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The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers.
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Submitted 21 May, 2010; v1 submitted 23 July, 2009;
originally announced July 2009.
