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Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers
Authors:
D. Lagarde,
M. Glazov,
V. **dal,
K. Mourzidis,
Iann Gerber,
A. Balocchi,
L. Lombez,
P. Renucci,
T. Taniguchi,
K. Watanabe,
C. Robert,
X. Marie
Abstract:
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is…
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In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $τ_s\sim10~$ps, driven by the interplay between $Γ$-valley chiral phonons and spin-orbit mixing.
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Submitted 9 July, 2024;
originally announced July 2024.
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Brightened emission of dark trions in transition-metal dichalcogenide monolayers
Authors:
V. **dal,
K. Mourzidis,
A. Balocchi,
C. Robert,
P. Li,
D. Van Tuan,
L. Lombez,
D. Lagarde,
P. Renucci,
T. Taniguchi,
K. Watanabe,
H. Dery,
X. Marie
Abstract:
The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions.…
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The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures.
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Submitted 4 June, 2024;
originally announced June 2024.
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Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction
Authors:
Hassan Lamsaadi,
Dorian Beret,
Ioannis Paradisanos,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Andrey Turchanin,
Laurent Lombez,
Nicolas Combe,
Vincent Paillard,
Jean-Marie Poumirol
Abstract:
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe…
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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Submitted 23 June, 2023;
originally announced June 2023.
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Interface engineering of charge-transfer excitons in 2D lateral heterostructures
Authors:
Roberto Rosati,
Ioannis Paradisanos,
Libai Huang,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Laurent Lombez,
Pierre Renucci,
Andrey Turchanin,
Bernhard Urbaszek,
Ermin Malic
Abstract:
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-enca…
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The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe$_2$-WSe$_2$ heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.
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Submitted 6 February, 2023;
originally announced February 2023.
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Non-linear diffusion of negatively charged excitons in WSe2 monolayer
Authors:
D. Beret,
L. Ren,
C. Robert,
L. Foussat,
P. Renucci,
D. Lagarde,
A. Balocchi,
T. Amand,
B. Urbaszek,
K. Watanabe,
T. Taniguchi,
X. Marie,
L. Lombez
Abstract:
We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (interv…
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We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (intervalley and intravalley trion) as well as the dark trion. The time evolution allows us to identify the interplay of different excitonic species: the trionic species appear after the neutral excitonic ones, consistent with a bimolecular formation mechanism. Using the experimental observations, we propose a phenomenological model suggesting the coexistence of two populations: a first one exhibiting a fast and efficient diffusion mechanism and a second one with a slower dynamics and a less efficient diffusion process. These two contributions could be attributed to hot and cold trion populations.
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Submitted 1 August, 2022;
originally announced August 2022.
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Magnetic imaging with spin defects in hexagonal boron nitride
Authors:
P. Kumar,
F. Fabre,
A. Durand,
T. Clua-Provost,
J. Li,
J. H. Edgar,
N. Rougemaille,
J. Coraux,
X. Marie,
P. Renucci,
C. Robert,
I. Robert-Philip,
B. Gil,
G. Cassabois,
A. Finco,
V. Jacques
Abstract:
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$,…
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Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$, a van der Waals ferromagnet with a Curie temperature slightly above $300$ K. Compared to other quantum sensors embedded in 3D materials, the advantages of the hBN-based magnetic sensor described in this work are its ease of use, high flexibility and, more importantly, its ability to be placed in close proximity to a target sample. Such a sensing unit will likely find numerous applications in 2D materials research by offering a simple way to probe the physics of van der Waals heterostructures.
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Submitted 21 July, 2022;
originally announced July 2022.
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Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Authors:
Dorian Beret,
Ioannis Paradisanos,
Ziyang Gan,
Emad Naja dehaghani,
Antony George,
Tibor Lehnert,
Johannes Biskupek,
Shivangi Shree,
Ana Estrada-Real,
Delphine Lagarde,
Jean-Marie Poumirol,
Vincent Paillard,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Ute Kaiser,
Pierre Renucci,
Laurent Lombez,
Andrey Turchanin,
Bernhard Urbaszek
Abstract:
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostruc…
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Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.
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Submitted 15 April, 2022;
originally announced April 2022.
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Optical detection of long electron spin transport lengths in a monolayer semiconductor
Authors:
Lei Ren,
Laurent Lombez,
Cedric Robert,
Dorian Beret,
Delphine Lagarde,
Bernhard Urbaszek,
Pierre Renucci,
Takashi Taniguchi,
Kenji Watanabe,
Scott A. Crooker,
Xavier Marie
Abstract:
Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be m…
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Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially-separated and linearly-polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 microns. Characteristic spin/valley diffusion lengths of 18 +/- 3 um are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pum** efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.
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Submitted 2 February, 2022;
originally announced February 2022.
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Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures
Authors:
H. Tornatzky,
C. Robert,
P. Renucci,
B. Han,
T. Blon,
B. Lassagne,
G. Ballon,
Y. Lu,
K. Watanabe,
T. Taniguchi,
B. Urbaszek,
J. M. J. Lopes,
X. Marie
Abstract:
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni i…
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We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results are interpreted in terms of a spin-dependent charge transfer between the MoSe2 monolayer and the Nickel film. The build-up of circular polarization is observed up to 120 K, mainly limited by the trion emission that vanishes with temperature.
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Submitted 25 October, 2021;
originally announced October 2021.
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Second harmonic generation control in twisted bilayers of transition metal dichalcogenides
Authors:
Ioannis Paradisanos,
Andres Manuel Saiz Raven,
Thierry Amand,
Cedric Robert,
Pierre Renucci,
Kenji Watanabe,
Takashi Taniguchi,
Iann C. Gerber,
Xavier Marie,
Bernhard Urbaszek
Abstract:
The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two…
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The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two monolayers can be measured directly on the assembled heterostructure. We show that the amplitude and polarization of the SHG signal from the heterostructure are determined by the twist angle between the layers and exciton resonances at the SH energy. For heterostructures with close to zero twist angle, we observe changes of exciton resonance energies and the appearance of new resonances in the linear and non-linear susceptibilities.
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Submitted 15 October, 2021;
originally announced October 2021.
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Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
Authors:
Ziqi Zhou,
Paul Marcon,
Xavier Devaux,
Philippe Pigeat,
Alexandre Bouché,
Sylvie Migot,
Abdallah Jaafar,
Remi Arras,
Michel Vergnat,
Lei Ren,
Hans Tornatzky,
Cedric Robert,
Xavier Marie,
Jean-Marie George,
Henri-Yves Jaffrès,
Mathieu Stoffel,
Hervé Rinnert,
Zhongming Wei,
Pierre Renucci,
Lionel Calmels,
Yuan Lu
Abstract:
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for develo** spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy…
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Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for develo** spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy energy of 0.975mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role to establish the large PMA. First principle calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from an indirect bandgap with 7ML-MgO to a direct bandgap with 3ML-MgO. Proximity effect induced by Fe results in a splitting of 10meV in the valence band at the Γ point for the 3ML-MgO structure while it is negligible for the 7ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices on 2D transition-metal dichalcogenide materials.
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Submitted 18 June, 2021;
originally announced June 2021.
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Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field
Authors:
Alaa E. Giba,
Xue Gao,
Mathieu Stoffel,
Xavier Devaux,
Bo Xu,
Xavier Marie,
Pierre Renucci,
Henri Jaffrès,
Jean-Marie George,
Guangwei Cong,
Zhanguo Wang,
Hervé Rinnert,
Yuan Lu
Abstract:
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and…
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We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin relaxation process. The first step occurs when electrons tunnel through the MgO barrier and travel across the GaAs depletion layer. The spin relaxation is dominated by the Dyakonov-Perel mechanism related to the kinetic energy of electrons, which is characterized by a bias dependent Pc. The second step occurs when electrons are captured into QDs prior to their radiative recombination with holes. The temperature dependence of Pc reflects the temperature induced modification of the QDs do**, together with the variation of the ratio between the charge carrier lifetime and the spin relaxation time inside the QDs. The understanding of these spin relaxation mechanisms is essential to improve the performance of spin LED for future spin optoelectronic applications at room temperature under zero applied magnetic field.
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Submitted 14 August, 2020;
originally announced August 2020.
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Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
Authors:
P. Barate,
S. Liang,
T. T. Zhang,
J. Frougier,
M. Vidal,
P. Renucci,
X. Devaux,
B. Xu,
H. Jaffrès,
J. M. George,
X. Marie,
M. Hehn,
S. Mangin,
Y. Zheng,
T. Amand,
B. Tao,
X. F. Han,
Z. Wang,
Y. Lu
Abstract:
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t…
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An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.
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Submitted 7 April, 2020;
originally announced April 2020.
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Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature
Authors:
Iann C. Gerber,
Emmanuel Courtade,
Shivangi Shree,
Cedric Robert,
Takashi Taniguchi,
Kenji Watanabe,
Andrea Balocchi,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek
Abstract:
Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculat…
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Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculated and measured spectra we find a strong interlayer exciton transition in energy between A and B intralayer excitons, observable for T$=4 -300$ K, whereas no such transition is observed for the monolayer in the same structure in this energy range. The interlayer excitons consist of an electron localized in one layer and a hole state delocalized over the bilayer, which results in the unusual combination of high oscillator strength and a static dipole moment. We also find signatures of interlayer excitons involving the second highest valence band (B) and compare absorption calculations for different bilayer stackings. For homotrilayer MoS$_2$ we also observe interlayer excitons and an energy splitting between different intralayer A-excitons originating from the middle and outer layers, respectively.
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Submitted 6 February, 2019; v1 submitted 15 November, 2018;
originally announced November 2018.
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Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy
Authors:
B. Han,
C. Robert,
E. Courtade,
M. Manca,
S. Shree,
T. Amand,
P. Renucci,
T. Taniguchi,
K. Watanabe,
X. Marie,
L. E. Golub,
M. M. Glazov,
B. Urbaszek
Abstract:
Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator…
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Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator strength and strong inhomogeneous broadening. Here we show that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV in our MoSe$_2$ and MoTe$_2$ monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1$s$ transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation and resonant Raman scattering confirming their origin as excited excitonic states in monolayer thin semiconductors.
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Submitted 11 May, 2018;
originally announced May 2018.
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Spectrally narrow exciton luminescence from monolayer MoS2 exfoliated onto epitaxially grown hexagonal BN
Authors:
E. Courtade,
B. Han,
S. Nakhaie,
C. Robert,
X. Marie,
P. Renucci,
T. Taniguchi,
K. Watanabe,
L. Geelhaar,
J. M. J. Lopes,
B. Urbaszek
Abstract:
The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal boron nitride (hBN) encapsulation, which drastically reduces the inhomogeneous contribution to the exciton linewidth. Most studies use exfoliated hBN f…
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The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal boron nitride (hBN) encapsulation, which drastically reduces the inhomogeneous contribution to the exciton linewidth. Most studies use exfoliated hBN from high quality flakes grown under high pressure. In this work, we show that hBN grown by molecular beam epitaxy (MBE) over a large surface area substrate has a similarly positive impact on the optical emission from TMD MLs. We deposit MoS$_2$ and MoSe$_2$ MLs on ultrathin hBN films (few MLs thick) grown on Ni/MgO(111) by MBE. Then we cover them with exfoliated hBN to finally obtain an encapsulated sample : exfoliated hBN/TMD ML/MBE hBN. We observe an improved optical quality of our samples compared to TMD MLs exfoliated directly on SiO$_2$ substrates. Our results suggest that hBN grown by MBE could be used as a flat and charge free substrate for fabricating TMD-based heterostructures on a larger scale.
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Submitted 18 April, 2018;
originally announced April 2018.
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Electronic structure of the Co(0001)/MoS2 interface, and its possible use for electrical spin injection in a single MoS2 layer
Authors:
Thomas Garandel,
Rémi Arras,
Xavier Marie,
Pierre Renucci,
Lionel Calmels
Abstract:
The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these materials. Here, the hcp Co(0001)/MoS2 interface electronic structure is investigated by first-principles calculations based on the density functiona…
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The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these materials. Here, the hcp Co(0001)/MoS2 interface electronic structure is investigated by first-principles calculations based on the density functional theory. In the lowest energy configuration of the hybrid system after optimization of the atomic coordinates, we show that interface sulfur atoms are covalently bound to one, two or three cobalt atoms. A decrease of the Co atom spin magnetic moment is observed at the interface, together with a small magnetization of S atoms. Mo atoms also hold small magnetic moments which can take positive as well as negative values. The charge transfers due to covalent bonding between S and Co atoms at the interface have been calculated for majority and minority spin electrons and the connections between these interface charge transfers and the induced magnetic properties of the MoS2 layer are discussed. Band structure and density of states of the hybrid system are calculated for minority and majority spin electrons, taking into account spin-orbit coupling. We demonstrate that MoS2 bound to the Co contact becomes metallic due to hybridization between Co d and S p orbitals. For this metallic phase of MoS2, a spin polarization at the Fermi level of 16 % in absolute value is calculated, that could allow spin injection into the semiconducting MoS2 monolayer channel. Finally, the symmetry of the majority and minority spin electron wave functions at the Fermi level in the Co-bound metallic phase of MoS2 and the orientation of the border between the metallic and semiconducting phases of MoS2 are investigated, and their impact on spin injection into the MoS2 channel is discussed.
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Submitted 28 March, 2018;
originally announced March 2018.
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Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
Authors:
F. Cadiz,
A. Djeffal,
D. Lagarde,
A. Balocchi,
B. S. Tao,
B. Xu,
S. H. Liang,
M. Stoffel,
X. Devaux,
H. Jaffres,
J. M. George,
M. Hehn,
S. Mangin,
H. Carrere,
X. Marie,
T. Amand,
X. F. Han,
Z. G. Wang,
B. Urbaszek,
Y. Lu,
P. Renucci
Abstract:
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi…
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The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.
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Submitted 12 March, 2018;
originally announced March 2018.
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Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field
Authors:
M. Manca,
G. Wang,
T. Kuroda,
S. Shree,
A. Balocchi,
P. Renucci,
X. Marie,
M. V. Durnev,
M. M. Glazov,
K. Sakoda,
T. Mano,
T. Amand,
B. Urbaszek
Abstract:
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear p…
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In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Δ$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $μ$eV (-22 %) to +10 $μ$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.
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Submitted 27 March, 2018; v1 submitted 2 February, 2018;
originally announced February 2018.
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Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures
Authors:
C. Robert,
M. A. Semina,
F. Cadiz,
M. Manca,
E. Courtade,
T. Taniguchi,
K. Watanabe,
H. Cai,
S. Tongay,
B. Lassagne,
P. Renucci,
T. Amand,
X. Marie,
M. M. Glazov,
B. Urbaszek
Abstract:
The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct…
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The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct comparison between transitions in optical spectra with different oscillator strength more challenging. Here we reveal in reflectivity and in photoluminescence excitation spectroscopy the presence of excited states of the A-exciton in MoS2 monolayers encapsulated in hBN layers of calibrated thickness, allowing to extrapolate an exciton binding energy of about 220 meV. We theoretically reproduce the energy separations and oscillator strengths measured in reflectivity by combining the exciton resonances calculated for a screened two-dimensional Coulomb potential with transfer matrix calculations of the reflectivity for the van der Waals structure. Our analysis shows a very different evolution of the exciton oscillator strength with principal quantum number for the screened Coulomb potential as compared to the ideal two-dimensional hydrogen model.
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Submitted 5 December, 2017;
originally announced December 2017.
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Charged excitons in monolayer WSe$_2$: experiment and theory
Authors:
E. Courtade,
M. Semina,
M. Manca,
M. M. Glazov,
C. Robert,
F. Cadiz,
G. Wang,
T. Taniguchi,
K. Watanabe,
M. Pierre,
W. Escoffier,
E. L. Ivchenko,
P. Renucci,
X. Marie,
T. Amand,
B. Urbaszek
Abstract:
Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X…
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Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X$^+$ and X$^-$ and the X$^-$ fine structure. We find in the charge neutral regime, the X$^0$ emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X$^0$ and an excited state of the X$^0$ are visible. In the $n$-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6~meV for X$^-$ is observed. We present a symmetry analysis of the different X$^+$ and X$^-$ trion states and results of the binding energy calculations. We compare the trion binding energy for the $n$-and $p$-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X$^+$ and X$^-$ trions as well as the fine structure of the X$^-$ state can be related to the short-range Coulomb exchange interaction between the charge carriers.
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Submitted 9 May, 2018; v1 submitted 5 May, 2017;
originally announced May 2017.
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Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
Authors:
F. Cadiz,
E. Courtade,
C. Robert,
G. Wang,
Y. Shen,
H. Cai,
T. Taniguchi,
K. Watanabe,
H. Carrere,
D. Lagarde,
M. Manca,
T. Amand,
P. Renucci,
S. Tongay,
X. Marie,
B. Urbaszek
Abstract:
The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contras…
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The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe2 and WSe2. In this work we show that encapsulation of ML MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T = 4K. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high quality samples. Among the new possibilities offered by the well-defined optical transitions we measure the homogeneous broadening induced by the interaction with phonons in temperature dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.
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Submitted 1 February, 2017;
originally announced February 2017.
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Enabling valley selective exciton scattering in monolayer WSe$_2$ through upconversion
Authors:
M. Manca,
M. M. Glazov,
C. Robert,
F. Cadiz,
T. Taniguchi,
K. Watanabe,
E. Courtade,
T. Amand,
P. Renucci,
X. Marie,
G. Wang,
B. Urbaszek
Abstract:
Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects.…
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Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional (2D) materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy, we also observe the excited A-excitons state $2s$. Detuning of the continuous wave, low power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal.
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Submitted 20 January, 2017;
originally announced January 2017.
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Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
Authors:
F. Cadiz,
D. Lagarde,
P. Renucci,
D. Paget,
T. Amand,
H. Carrère,
A. C. H. Rowe,
S. Arscott
Abstract:
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (…
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Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time.
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Submitted 22 November, 2016;
originally announced November 2016.
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Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Authors:
Fabian Cadiz,
Cedric Robert,
Gang Wang,
Wilson Kong,
Xi Fan,
Mark Blei,
Delphine Lagarde,
Maxime Gay,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Thierry Amand,
Xavier Marie,
Pierre Renucci,
Sefaattin Tongay,
Bernhard Urbaszek
Abstract:
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical…
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The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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Submitted 30 June, 2016;
originally announced June 2016.
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Excitonic properties of semiconducting monolayer and bilayer MoTe2
Authors:
C. Robert,
R. Picard,
D. Lagarde,
G. Wang,
J. P. Echeverry,
F. Cadiz,
P. Renucci,
A. Högele,
T. Amand,
X. Marie,
I. C. Gerber,
B. Urbaszek
Abstract:
MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indir…
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MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indirect) electronic band gap for the monolayer (bilayer). By solving the Bethe-Salpeter equation, we calculate similar energies for the direct excitonic states in monolayer and bilayer. We then study the optical properties by means of photoluminescence (PL) excitation, time-resolved PL and power dependent PL spectroscopy. We identify the same energy for the B exciton state in monolayer and bilayer. Following circularly polarized excitation, we do not find any exciton polarization for a large range of excitation energies. At low temperature (T=10 K), we measure similar PL decay times of the order of 4 ps for both monolayer and bilayer excitons with a slightly longer one for the bilayer. Finally, we observe a reduction of the exciton-exciton annihilation contribution to the non-radiative recombination in bilayer.
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Submitted 10 June, 2016;
originally announced June 2016.
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Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers
Authors:
G. Wang,
X. Marie,
B. L. Liu,
T. Amand,
C. Robert,
F. Cadiz,
P. Renucci,
B. Urbaszek
Abstract:
The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence…
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The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence in monolayer WSe2 by tuning the applied magnetic field perpendicular to the monolayer plane. We show rotation of this coherent superposition of valley states by angles as large as 30 degrees in applied fields up to 9 T. This exciton valley coherence control on ps time scale could be an important step towards complete control of qubits based on the valley degree of freedom.
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Submitted 7 June, 2016;
originally announced June 2016.
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Well separated trion and neutral excitons on superacid treated MoS2 monolayers
Authors:
Fabian Cadiz,
Simon Tricard,
Maxime Gay,
Delphine Lagarde,
Gang Wang,
Cedric Robert,
Pierre Renucci,
Bernhard Urbaszek,
Xavier Marie
Abstract:
Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here…
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Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here we show that in superacid treated MoS2 MLs the PL intensity increases by up to 60 times at room temperature. The neutral and charged exciton transitions are spectrally well separated in PL and reflectivity at T=4 K, with linewidth for the neutral exciton of 15 meV, but with similar intensities compared to the ones in as-exfoliated MLs at the same temperature. Time resolved experiments uncover picoseconds recombination dynamics analyzed separately for charged and neutral exciton emission. Using the chiral interband selection rules, we demonstrate optically induced valley polarization for both complexes and valley coherence for only the neutral exciton.
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Submitted 20 April, 2016;
originally announced April 2016.
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Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
Authors:
C. Robert,
D. Lagarde,
F. Cadiz,
G. Wang,
B. Lassagne,
T. Amand,
A. Balocchi,
P. Renucci,
S. Tongay,
B. Urbaszek,
X. Marie
Abstract:
We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenar…
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We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenario: at low temperature (T $\leq$ 50 K), the exciton oscillator strength is so large that the entire light can be emitted before the time required for the establishment of a thermalized exciton distribution. For higher lattice temperatures, the photoluminescence dynamics is characterized by two regimes with very different characteristic times. First the PL intensity drops drastically with a decay time in the range of the picosecond driven by the escape of excitons from the radiative window due to exciton- phonon interactions. Following this first non-thermal regime, a thermalized exciton population is established gradually yielding longer photoluminescence decay times in the nanosecond range. Both the exciton effective radiative recombination and non-radiative recombination channels including exciton-exciton annihilation control the latter. Finally the temperature dependence of the measured exciton and trion dynamics indicates that the two populations are not in thermodynamical equilibrium.
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Submitted 3 March, 2016; v1 submitted 1 March, 2016;
originally announced March 2016.
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Spin transport in molybdenum disulfide multilayer channel
Authors:
S. H. Liang,
Y. Lu,
B. S. Tao,
S. Mc-Murtry,
G. Wang,
X. Marie,
P. Renucci,
H. Jaffrès,
F. Montaigne,
D. Lacour,
J. -M. George,
S. Petit-Watelot,
M. Hehn,
A. Djeffal,
S. Mangin
Abstract:
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% h…
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Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hop** via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
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Submitted 15 December, 2015;
originally announced December 2015.
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Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
Authors:
S. Liang,
T. T. Zhang,
P. Barate,
J. Frougier,
M. Vidal,
P. Renucci,
B. Xu,
H. Jaffrès,
J. M. George,
X. Devaux,
M. Hehn,
X. Marie,
S. Mangin,
H. Yang,
A. Hallal,
M. Chshiev,
T. Amand,
H. Liu,
D. Liu,
X. Han,
Z. Wang,
Y. Lu
Abstract:
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence pola…
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We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.
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Submitted 17 April, 2014;
originally announced April 2014.
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L-valley Electron Spin Dynamics in GaAs
Authors:
T. Zhang,
P. Barate,
C. T. Nguyen,
A. Balocchi,
T. Amand,
P. Renucci,
H. Carrere,
B. Urbaszek,
X. Marie
Abstract:
Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the $Γ$ valley following an energy relaxation of several hundred…
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Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the $Γ$ valley following an energy relaxation of several hundreds of meV. Combining these high energy photo-excitation experiments with time-resolved photoluminescence spectroscopy of $Γ$ valley spin-polarized photogenerated electrons allows us to deduce a typical L valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.
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Submitted 25 July, 2012;
originally announced July 2012.
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Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells
Authors:
H. Q. Ye,
G. Wang,
B. L. Liu,
Z. W. Shi,
W. X. Wang,
C. Fontaine,
A. Balocchi,
T. Amand,
D. Lagarde,
P. Renucci,
X. Marie
Abstract:
The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A…
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The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.
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Submitted 14 May, 2012; v1 submitted 31 March, 2012;
originally announced April 2012.
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Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
Authors:
A. Balocchi,
Q. H. Duong,
P. Renucci,
B. Liu,
C. Fontaine,
T. Amand,
D. Lagarde,
X. Marie
Abstract:
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost van…
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The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.
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Submitted 28 July, 2011;
originally announced July 2011.
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Robust quantum dot state preparation via adiabatic passage with frequency-swept optical pulses
Authors:
C. -M. Simon,
T. Belhadj,
B. Chatel,
T. Amand,
P. Renucci,
A. Lemaitre,
O. Krebs,
P. A. Dalgarno,
R. J. Warburton,
X. Marie,
B. Urbaszek
Abstract:
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flop** of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust…
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The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flop** of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.
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Submitted 16 July, 2010;
originally announced July 2010.
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Exciton and hole spin dynamics in ZnO
Authors:
D. Lagarde,
A. Balocchi,
P. Renucci,
H. Carrère,
F. Zhao,
T. Amand,
X. Marie,
Z. X. Mei,
X. L. Du,
Q. K. Xue
Abstract:
The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and tempera…
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The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and temperature dependences of the photoluminescence polarization dynamics are well explained by the fast free exciton spin relaxation time and the ionization of bound excitons.
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Submitted 15 April, 2008;
originally announced April 2008.
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Room temperature Optical Orientation of Exciton Spin in cubic GaN/AlN quantum dots
Authors:
D. Lagarde,
A. Balocchi,
H. Carrere,
P. Renucci,
T. Amand,
X. Marie,
S. Founta,
H. Mariette
Abstract:
The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with c…
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The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with characteristic decay times longer than 10 ns.
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Submitted 28 November, 2007;
originally announced November 2007.
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Electron spin quantum beats in positively charged quantum dots: nuclear field effects
Authors:
L. Lombez,
P. -F. Braun,
X. Marie,
P. Renucci,
B. Urbaszek,
T. Amand,
O. Krebs,
P. Voisin
Abstract:
We have studied the electron spin coherence in an ensemble of positively charged InAs/GaAs quantum dots. In a transverse magnetic field, we show that two main contributions must be taken into account to explain the dam** of the circular polarization oscillations. The first one is due to the nuclear field fluctuations from dot to dot experienced by the electron spin. The second one is due to th…
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We have studied the electron spin coherence in an ensemble of positively charged InAs/GaAs quantum dots. In a transverse magnetic field, we show that two main contributions must be taken into account to explain the dam** of the circular polarization oscillations. The first one is due to the nuclear field fluctuations from dot to dot experienced by the electron spin. The second one is due to the dispersion of the transverse electron Lande g-factor, due to the inherent inhomogeneity of the system, and leads to a field dependent contribution to the dam**. We have developed a model taking into account both contributions, which is in good agreement with the experimental data. This enables us to extract the pure contribution to dephasing due to the nuclei.
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Submitted 12 April, 2007; v1 submitted 12 January, 2007;
originally announced January 2007.
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Electrical spin injection into p-doped quantum dots through a tunnel barrier
Authors:
L. Lombez,
P. Renucci,
P. Gallo,
P. F. Braun,
H. Carrere,
P. H. Binh,
X. Marie,
T. Amand,
B. Urbaszek,
J. L. Gauffier,
T. Camps,
A. Arnoult,
C. Fontaine,
C. Deranlot,
R. Mattana,
H. Jaffres,
J. M. George
Abstract:
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminesc…
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We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.
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Submitted 8 January, 2007; v1 submitted 16 October, 2006;
originally announced October 2006.
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Nonlinear effects in spin relaxation of cavity polaritons
Authors:
D. D. Solnyshkov,
I. A. Shelykh,
M. M. Glazov,
G. Malpuech,
T. Amand,
P. Renucci,
X. Marie,
A. V Kavokin
Abstract:
We present the general kinetic formalism for the description of spin and energy relaxation of the cavity polaritons in the framework of the Born-Markov approximation. All essential mechanisms of polaritons redistribution in reciprocal space together with final state bosonic stimulation are taken into account, from our point of view. The developed theory is applied to describe our experimental re…
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We present the general kinetic formalism for the description of spin and energy relaxation of the cavity polaritons in the framework of the Born-Markov approximation. All essential mechanisms of polaritons redistribution in reciprocal space together with final state bosonic stimulation are taken into account, from our point of view. The developed theory is applied to describe our experimental results on the polarization dynamics obtained in the polariton parametric amplifier geometry (pum** at so-called magic angle). We have experimentally confirmed that the anisotropy of the polariton-polariton interaction is responsible for the build up of the cross-linear polarisation of the signal. The long-living linear polarization is observed at zero detuning. Under elliptical pum**, we have directly measured in the time domain and modelled the effect of self-induced Larmor precession.
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Submitted 2 October, 2006;
originally announced October 2006.
