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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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An rf Quantum Capacitance Parametric Amplifier
Authors:
A. El Kass,
C. T. **,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype narrowband amplifier exhibits a gain greater than 20 dB up to an input power of - 66 dBm (1 dB compression), and a noise temperature TN of 1.3 K at 370 MHz. In contra…
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We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype narrowband amplifier exhibits a gain greater than 20 dB up to an input power of - 66 dBm (1 dB compression), and a noise temperature TN of 1.3 K at 370 MHz. In contrast to superconducting amplifiers, the quantum capacitance parametric amplifier (QCPA) is operable at tesla-scale magnetic fields and temperatures ranging from milli kelvin to a few kelvin. These attributes, together with its low power (microwatt) operation when compared to conventional transistor amplifiers, suggest the QCPA may find utility in enabling on-chip integrated readout circuits for semiconductor qubits or in the context of space transceivers and radio astronomy instruments.
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Submitted 25 April, 2023;
originally announced April 2023.
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Local and Non-local Microwave Impedance of a Three-Terminal Hybrid Device
Authors:
B. Harlech-Jones,
S. J. Waddy,
J. D. S. Witt,
D. Govender,
L. Casparis,
E. Martinez,
R. Kallaher,
S. Gronin,
G. Gardner,
M. J. Manfra,
D. J. Reilly
Abstract:
We report microwave impedance measurements of a superconductor-semiconductor hybrid nanowire device with three terminals (3T). Our technique makes use of transmission line resonators to acquire the nine complex scattering matrix parameters (S-parameters) of the device on fast timescales and across a spectrum of frequencies spanning 0.3 - 7 GHz. Via comparison with dc-transport measurements, we exa…
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We report microwave impedance measurements of a superconductor-semiconductor hybrid nanowire device with three terminals (3T). Our technique makes use of transmission line resonators to acquire the nine complex scattering matrix parameters (S-parameters) of the device on fast timescales and across a spectrum of frequencies spanning 0.3 - 7 GHz. Via comparison with dc-transport measurements, we examine the utility of this technique for probing the local and non-local response of 3T devices where capacitive and inductive contributions can play a role. Such measurements require careful interpretation but may be of use in discerning true Majorana zero modes from trivial states arising from disorder.
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Submitted 25 July, 2022;
originally announced July 2022.
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Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures
Authors:
J. D. S. Witt,
S. J. Pauka,
G. C. Gardner,
S. Gronin,
T. Wang,
C. Thomas,
M. J. Manfra,
D. J. Reilly,
M. C. Cassidy
Abstract:
The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the Iordanskii--Lyanda-Geller--Pikus model and two distinct transport regimes were identified which correspond to the first and second sub-bands of the quantum well. The spi…
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The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the Iordanskii--Lyanda-Geller--Pikus model and two distinct transport regimes were identified which correspond to the first and second sub-bands of the quantum well. The spin-orbit interaction splitting energy is extracted from the fits to the data, which also displays two distinct regimes. The different sub-band regimes exhibit different spin-scattering mechanisms, the identification of which, is of relevance for device platforms of reduced dimensionality which utilise the spin-orbit interaction.
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Submitted 6 December, 2021; v1 submitted 30 November, 2021;
originally announced November 2021.
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Josephson Junctions Via Anodization of Epitaxial Al on an InAs Heterostructure
Authors:
A. Jouan,
J. D. S. Witt,
G. C. Gardner,
C. Thomas,
T. Lindemann,
S. Gronin,
M. J. Manfra,
D. J. Reilly
Abstract:
We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique to define Josephson junctions in proximity induced superconducting Al-InAs heterostructures, we observe multiple Andreev reflections in transport expe…
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We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique to define Josephson junctions in proximity induced superconducting Al-InAs heterostructures, we observe multiple Andreev reflections in transport experiments, indicative of a high quality junction. We further compare the mobility and density of Hall-bars defined via wet etching and anodization. These results may find utility in uncovering new fabrication approaches to junction-based qubit platforms.
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Submitted 23 May, 2021;
originally announced May 2021.
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Spin-orbit Energies in Etch-Confined Superconductor-Semiconductor Nanowires
Authors:
J. D. S. Witt,
G. C. Gardner,
C. Thomas,
T. Lindemann,
S. Gronin,
M. J. Manfra,
D. J. Reilly
Abstract:
We report magneto-transport measurements of quasi-1-dimensional (1D) Al-InAs nanowires produced via etching of a hybrid superconductor-semiconductor two-dimensional electron gas (2DEG). Tunnel spectroscopy measurements above the superconducting gap provide a means of identifying the 1D sub-bands associated with the confined 1D region. Fitting the data to a model that includes the different compone…
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We report magneto-transport measurements of quasi-1-dimensional (1D) Al-InAs nanowires produced via etching of a hybrid superconductor-semiconductor two-dimensional electron gas (2DEG). Tunnel spectroscopy measurements above the superconducting gap provide a means of identifying the 1D sub-bands associated with the confined 1D region. Fitting the data to a model that includes the different components of the spin-orbit interaction (SOI) reveals their strength, of interest for evaluating the suitability of superconductor-semiconductor 2DEG for realizing Majorana qubits.
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Submitted 24 November, 2021; v1 submitted 15 March, 2021;
originally announced March 2021.
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Roadmap on quantum nanotechnologies
Authors:
Arne Laucht,
Frank Hohls,
Niels Ubbelohde,
M Fernando Gonzalez-Zalba,
David J Reilly,
Søren Stobbe,
Tim Schröder,
Pasquale Scarlino,
Jonne V Koski,
Andrew Dzurak,
Chih-Hwan Yang,
Jun Yoneda,
Ferdinand Kuemmeth,
Hendrik Bluhm,
Jarryd Pla,
Charles Hill,
Joe Salfi,
Akira Oiwa,
Juha T Muhonen,
Ewold Verhagen,
Matthew D LaHaye,
Hyun Ho Kim,
Adam W Tsen,
Dimitrie Culcer,
Attila Geresdi
, et al. (4 additional authors not shown)
Abstract:
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu…
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Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.
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Submitted 19 January, 2021;
originally announced January 2021.
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Microwaves in Quantum Computing
Authors:
Joseph C. Bardin,
Daniel H. Slichter,
David J. Reilly
Abstract:
Quantum information processing systems rely on a broad range of microwave technologies and have spurred development of microwave devices and methods in new operating regimes. Here we review the use of microwave signals and systems in quantum computing, with specific reference to three leading quantum computing platforms: trapped atomic ion qubits, spin qubits in semiconductors, and superconducting…
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Quantum information processing systems rely on a broad range of microwave technologies and have spurred development of microwave devices and methods in new operating regimes. Here we review the use of microwave signals and systems in quantum computing, with specific reference to three leading quantum computing platforms: trapped atomic ion qubits, spin qubits in semiconductors, and superconducting qubits. We highlight some key results and progress in quantum computing achieved through the use of microwave systems, and discuss how quantum computing applications have pushed the frontiers of microwave technology in some areas. We also describe open microwave engineering challenges for the construction of large-scale, fault-tolerant quantum computers.
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Submitted 2 November, 2020;
originally announced November 2020.
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Dispersive readout of Majorana qubits
Authors:
Thomas B. Smith,
Maja C. Cassidy,
David J. Reilly,
Stephen D. Bartlett,
Arne L. Grimsmo
Abstract:
We analyze a readout scheme for Majorana qubits based on dispersive coupling to a resonator. We consider two variants of Majorana qubits: the Majorana transmon and the Majorana box qubit. In both cases, the qubit-resonator interaction can produce sizeable dispersive shifts in the MHz range for reasonable system parameters, allowing for submicrosecond readout with high fidelity. For Majorana transm…
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We analyze a readout scheme for Majorana qubits based on dispersive coupling to a resonator. We consider two variants of Majorana qubits: the Majorana transmon and the Majorana box qubit. In both cases, the qubit-resonator interaction can produce sizeable dispersive shifts in the MHz range for reasonable system parameters, allowing for submicrosecond readout with high fidelity. For Majorana transmons, the light-matter interaction used for readout manifestly conserves Majorana parity, which leads to a notion of quantum nondemolition (QND) readout that is stronger than for conventional charge qubits. In contrast, Majorana box qubits only recover an approximately QND readout mechanism in the dispersive limit where the resonator detuning is large. We also compare dispersive readout to longitudinal readout for the Majorana box qubit. We show that the latter gives faster and higher fidelity readout for reasonable parameters, while having the additional advantage of being manifestly QND, and so may prove to be a better readout mechanism for these systems.
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Submitted 10 November, 2020; v1 submitted 31 August, 2020;
originally announced September 2020.
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Challenges in Scaling-up the Control Interface of a Quantum Computer
Authors:
D. J. Reilly
Abstract:
Challenges at the quantum-classical interface are examined with the goal of architecting a scaled-up quantum computer comprising many thousands of qubits in the solid-state. Separating the distinct sub-systems of the interface that perform readout and control, general arguments are given for why distributing the components of these sub-systems over significant distances and across large temperatur…
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Challenges at the quantum-classical interface are examined with the goal of architecting a scaled-up quantum computer comprising many thousands of qubits in the solid-state. Separating the distinct sub-systems of the interface that perform readout and control, general arguments are given for why distributing the components of these sub-systems over significant distances and across large temperature gradients presents a major challenge to scaling-up the technology. Largely addressing these issues, an architecture for the interface that leverages cryo-CMOS circuits proximal to the quantum plane is motivated in addition to protocols that enable massively parallel readout of qubits via frequency multiplexing.
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Submitted 10 December, 2019;
originally announced December 2019.
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A Cryogenic Interface for Controlling Many Qubits
Authors:
S. J. Pauka,
K. Das,
R. Kalra,
A. Moini,
Y. Yang,
M. Trainer,
A. Bousquet,
C. Cantaloube,
N. Dick,
G. C. Gardner,
M. J. Manfra,
D. J. Reilly
Abstract:
A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementations are usually held at millikelvin (mK) temperatures. Advanced CMOS technology, tightly integrated with the quantum system, would be ideal for implementing such a control interface but is generally discounted on the b…
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A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementations are usually held at millikelvin (mK) temperatures. Advanced CMOS technology, tightly integrated with the quantum system, would be ideal for implementing such a control interface but is generally discounted on the basis of its power dissipation that leads to heating of the fragile qubits. Here, we demonstrate an ultra low power, CMOS-based quantum control platform that takes digital commands as input and generates many parallel qubit control signals. Realized using 100,000 transistors operating near 100 mK, our platform alleviates the need for separate control lines to every qubit by exploiting the low leakage of transistors at cryogenic temperatures to store charge on floating gate structures that are used to tune-up quantum devices. This charge can then be rapidly shuffled between on-chip capacitors to generate the fast voltage pulses required for dynamic qubit control. We benchmark this architecture on a quantum dot test device, showing that the control of thousands of gate electrodes is feasible within the cooling power of commercially available dilution refrigerators.
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Submitted 3 December, 2019;
originally announced December 2019.
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Cryo-CMOS Band-gap Reference Circuits for Quantum Computing
Authors:
Yuanyuan Yang,
Kushal Das,
Alireza Moini,
David J. Reilly
Abstract:
The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here, we report the low-temperature performance of custom cryo-CMOS band-gap reference circuits designed to provide stable voltages and currents on-chip, independent of local temperature fluctuations. Our circuits are fabr…
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The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here, we report the low-temperature performance of custom cryo-CMOS band-gap reference circuits designed to provide stable voltages and currents on-chip, independent of local temperature fluctuations. Our circuits are fabricated in 0.35 um silicon Germanium (SiGe) BiCMOS and 28 nm Fully Depleted Silicon On Insulator (FDSOI) CMOS processes, and we compare the performance of each. Beyond their specific application as low-power references, these circuits are ideal test-vehicles for develo** design approaches that mitigate the adverse effects of cryogenic temperatures on circuit performance.
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Submitted 2 October, 2019;
originally announced October 2019.
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Tailored nanodiamonds for hyperpolarized 13C MRI
Authors:
T. Boele,
D. E. J. Waddington,
T. Gaebel,
E. Rej,
A. Hasija,
L. J. Brown,
D. R. McCamey,
D. J. Reilly
Abstract:
Nanodiamond is poised to become an attractive material for hyperpolarized 13C MRI if large nuclear polarizations can be achieved without the accompanying rapid spin-relaxation driven by paramagnetic species. Here we report enhanced and long-lived 13C polarization in synthetic nanodiamonds tailored by acid-cleaning and air-oxidation protocols. Our results separate the contributions of different par…
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Nanodiamond is poised to become an attractive material for hyperpolarized 13C MRI if large nuclear polarizations can be achieved without the accompanying rapid spin-relaxation driven by paramagnetic species. Here we report enhanced and long-lived 13C polarization in synthetic nanodiamonds tailored by acid-cleaning and air-oxidation protocols. Our results separate the contributions of different paramagnetic species on the polarization behavior, identifying the importance of substitutional nitrogen defect centers in the nanodiamond core. These results are likely of use in the development of nanodiamond-based imaging agents with size distributions of relevance for examining biological processes.
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Submitted 11 September, 2019;
originally announced September 2019.
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Repairing the Surface of InAs-based Topological Heterostructures
Authors:
S. J. Pauka,
J. D. S. Witt,
C. N. Allen,
B. Harlech-Jones,
A. Jouan,
G. C. Gardner,
S. Gronin,
T. Wang,
C. Thomas,
M. J. Manfra,
D. J. Reilly,
M. C. Cassidy
Abstract:
Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped $p$-wave superconducting state often subjects them to fabrication-induced damag…
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Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped $p$-wave superconducting state often subjects them to fabrication-induced damage, limiting their mobility. Here we examine scattering mechanisms in processed InAs 2DEG quantum wells and demonstrate a means of increasing their mobility via repairing the semiconductor-dielectric interface. Passivation of charged impurity states with an argon-hydrogen plasma results in a significant increase in the measured mobility and reduction in its variance relative to untreated samples, up to 45300 cm$^2$/(V s) in a 10 nm deep quantum well.
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Submitted 23 August, 2019;
originally announced August 2019.
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Characterising Quantum Devices at Scale with Custom Cryo-CMOS
Authors:
S. J. Pauka,
K. Das,
J. M. Hornibrook,
G. C. Gardner,
M. J. Manfra,
M. C. Cassidy,
D. J. Reilly
Abstract:
We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum devices to be characterized in a single cool-down of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a hot-swappable, parallel device test platform, we describe how this setup takes a standard wiring configuration as input and expands the capability for batch-char…
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We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum devices to be characterized in a single cool-down of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a hot-swappable, parallel device test platform, we describe how this setup takes a standard wiring configuration as input and expands the capability for batch-characterization of quantum devices at milli-Kelvin temperatures and high magnetic fields. The architecture of the cryo-CMOS multiplexer is discussed and performance benchmarked using few-electron quantum dots and Hall mobility-map** measurements.
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Submitted 20 August, 2019;
originally announced August 2019.
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Dispersive Gate Sensing the Quantum Capacitance of a Point Contact
Authors:
M. C. Jarratt,
A. Jouan,
A. C. Mahoney,
S. J. Waddy,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that t…
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The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that the technique can resolve the Van Hove singularities of a one-dimensional ballistic system, and also probe aspects of the potential landscape that are not easily accessed with dc transport. Beyond readout, these results suggest that gate-sensing can also be of use in tuning-up qubits or probing the charge configuration of open quantum devices in the regime where electrons are delocalized.
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Submitted 18 March, 2019;
originally announced March 2019.
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Transmission Lines and Meta-Materials based on Quantum Hall Plasmonics
Authors:
Stefano Bosco,
David P. DiVincenzo,
David J. Reilly
Abstract:
The characteristic impedance of a microwave transmission line is typically constrained to a value $Z_0$ = 50 $ Ω$, in-part because of the low impedance of free space and the limited range of permittivity and permeability realizable with conventional materials. Here we suggest the possibility of constructing high-impedance transmission lines by exploiting the plasmonic response of edge states assoc…
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The characteristic impedance of a microwave transmission line is typically constrained to a value $Z_0$ = 50 $ Ω$, in-part because of the low impedance of free space and the limited range of permittivity and permeability realizable with conventional materials. Here we suggest the possibility of constructing high-impedance transmission lines by exploiting the plasmonic response of edge states associated with the quantum Hall effect in gated devices. We analyze various implementations of quantum Hall transmission lines based on distributed networks and lumped-element circuits, including a detailed account of parasitic capacitance and Coulomb drag effects, which can modify device performance. We additionally conceive of a meta-material structure comprising arrays of quantum Hall droplets and analyze its unusual properties. The realization of such structures holds promise for efficiently wiring-up quantum circuits on chip, as well as engineering strong coupling between semiconductor qubits and microwave photons.
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Submitted 7 December, 2018;
originally announced December 2018.
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Enhancement of nuclear spin coherence times by driving dynamic nuclear polarization at defect centers in solids
Authors:
Gargee Sharma,
Torsten Gaebel,
Ewa Rej,
David J. Reilly,
Sophia E. Economou,
Edwin Barnes
Abstract:
The hyperpolarization of nuclear spins can enable powerful imaging and sensing techniques provided the hyperpolarization is sufficiently long-lived. Recent experiments on nanodiamond $^{13}$C nuclear spins demonstrate that relaxation times can be extended by three orders of magnitude by building up dynamic nuclear polarization (DNP) through the driving of electron-nuclear flip-flop processes at…
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The hyperpolarization of nuclear spins can enable powerful imaging and sensing techniques provided the hyperpolarization is sufficiently long-lived. Recent experiments on nanodiamond $^{13}$C nuclear spins demonstrate that relaxation times can be extended by three orders of magnitude by building up dynamic nuclear polarization (DNP) through the driving of electron-nuclear flip-flop processes at defect centers. This finding raises the question of whether the nuclear spin coherence times are also impacted by this hyperpolarization process. Here, we theoretically examine the effect of DNP on the nuclear spin coherence times as a function of the hyperpolarization drive time. We do this by develo** a microscopic theory of DNP in a nuclear spin ensemble coupled to microwave-driven defect centers in solids and subject to spin diffusion mediated by internuclear dipolar interactions. We find that, similarly to relaxation times, the nuclear spin coherence times can be increased substantially by a few orders of magnitude depending on the driving time. Our theoretical model and results will be useful for current and future experiments on enhancing nuclear spin coherence times via DNP.
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Submitted 8 May, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
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Gate-based single-shot readout of spins in silicon
Authors:
A. West,
B. Hensen,
A. Jouan,
T. Tanttu,
C. H. Yang,
A. Rossi,
M. F. Gonzalez-Zalba,
F. E. Hudson,
A. Morello,
D. J. Reilly,
A. S. Dzurak
Abstract:
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the f…
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Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots. This can be achieved using radio-frequency reflectometry on a single gate electrode defining the quantum dot itself, significantly reducing gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor.
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Submitted 1 October, 2018; v1 submitted 6 September, 2018;
originally announced September 2018.
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Phase-Encoded Hyperpolarized Nanodiamond for Magnetic Resonance Imaging
Authors:
David E. J. Waddington,
Thomas Boele,
Ewa Rej,
Dane R. McCamey,
Nicholas J. C. King,
Torsten Gaebel,
David J. Reilly
Abstract:
Surface-functionalized nanomaterials can act as theranostic agents that detect disease and track biological processes using hyperpolarized magnetic resonance imaging (MRI). Candidate materials are sparse however, requiring spinful nuclei with long spin-lattice relaxation (T1) and spin-dephasing times (T2), together with a reservoir of electrons to impart hyperpolarization. Here, we demonstrate the…
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Surface-functionalized nanomaterials can act as theranostic agents that detect disease and track biological processes using hyperpolarized magnetic resonance imaging (MRI). Candidate materials are sparse however, requiring spinful nuclei with long spin-lattice relaxation (T1) and spin-dephasing times (T2), together with a reservoir of electrons to impart hyperpolarization. Here, we demonstrate the versatility of the nanodiamond material system for hyperpolarized 13C MRI, making use of its intrinsic paramagnetic defect centers, hours-long nuclear T1 times, and T2 times suitable for spatially resolving millimeter-scale structures. Combining these properties, we enable a new imaging modality that exploits the phase-contrast between spins encoded with a hyperpolarization that is aligned, or anti-aligned with the external magnetic field. The use of phase-encoded hyperpolarization allows nanodiamonds to be tagged and distinguished in an MRI based on their spin-orientation alone, and could permit the action of specific bio-functionalized complexes to be directly compared and imaged.
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Submitted 30 August, 2017;
originally announced September 2017.
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Device Architecture for Coupling Spin Qubits Via an Intermediate Quantum State
Authors:
X. G. Croot,
S. J. Pauka,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on…
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We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on indirect exchange, the architecture permits precise control over tunnel rates between the singlet-triplet qubits and the intermediate state. We show that by separating qubits by 1 um, the residual capacitive coupling between them is reduced to 7 ueV.
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Submitted 20 July, 2017;
originally announced July 2017.
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Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment
Authors:
X. G. Croot,
S. J. Pauka,
H. Lu,
A. C. Gossard,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and…
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We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits.
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Submitted 29 June, 2017;
originally announced June 2017.
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Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator
Authors:
A. C. Mahoney,
J. I. Colless,
L. Peeters,
S. J. Pauka,
E. J. Fox,
X. Kou,
Lei Pan,
K. L. Wang,
D. Goldhaber-Gordon,
D. J. Reilly
Abstract:
Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, eve…
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Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, even at zero magnetic field. To date, the QAHE has been investigated using low-frequency transport measurements. However, transport requires contacting the sample and results can be difficult to interpret due to the presence of parallel conductive paths, via either the bulk or surface, or because additional non-chiral edge channels may exist. Here, we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb)2Te3. We identify features associated with chiral edge magnetoplasmons (EMPs), a signature that robust edge-channels are indeed intrinsic to this material system. Our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for a new, on-chip circuit element of practical importance: the TI, zero-field microwave circulator.
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Submitted 8 March, 2017;
originally announced March 2017.
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Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
Authors:
L. M. K. Vandersypen,
H. Bluhm,
J. S. Clarke,
A. S. Dzurak,
R. Ishihara,
A. Morello,
D. J. Reilly,
L. R. Schreiber,
M. Veldhorst
Abstract:
Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circ…
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Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual DC, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long spin coherence times, and the rich options for integration with classical electronics based on the same technology.
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Submitted 18 December, 2016;
originally announced December 2016.
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Nanodiamond-enhanced MRI
Authors:
David E. J. Waddington,
Mathieu Sarracanie,
Huiliang Zhang,
Najat Salameh,
David R. Glenn,
Ewa Rej,
Torsten Gaebel,
Thomas Boele,
Ronald L. Walsworth,
David J. Reilly,
Matthew S. Rosen
Abstract:
Nanodiamonds are of interest as nontoxic substrates for targeted drug delivery and as highly biostable fluorescent markers for cellular tracking. Beyond optical techniques however, options for noninvasive imaging of nanodiamonds in vivo are severely limited. Here, we demonstrate that the Overhauser effect, a proton-electron double resonance technique developed to detect free radicals in vivo, can…
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Nanodiamonds are of interest as nontoxic substrates for targeted drug delivery and as highly biostable fluorescent markers for cellular tracking. Beyond optical techniques however, options for noninvasive imaging of nanodiamonds in vivo are severely limited. Here, we demonstrate that the Overhauser effect, a proton-electron double resonance technique developed to detect free radicals in vivo, can enable high contrast magnetic resonance imaging (MRI) of nanodiamonds in water at room temperature and ultra-low magnetic field. The technique transfers spin polarization from paramagnetic impurities at nanodiamond surfaces to $^1$H spins in the surrounding water solution, creating MRI contrast on-demand. We further examine the conditions required for maximum enhancement as well as the ultimate sensitivity of the technique. The ability to perform continuous hyperpolarization via the Overhauser mechanism, in combination with excellent in vivo stability, raises the possibility of performing noninvasive tracking of nanodiamonds over indefinitely long periods of time.
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Submitted 16 November, 2016;
originally announced November 2016.
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Hyperpolarized Nanodiamond Surfaces
Authors:
Ewa Rej,
Torsten Gaebel,
David E. J. Waddington,
David J. Reilly
Abstract:
The widespread use of nanodiamond as a biomedical platform for drug-delivery, imaging, and sub-cellular tracking applications stems from their non-toxicity and unique quantum mechanical properties. Here, we extend this functionality to the domain of magnetic resonance, by demonstrating that the intrinsic electron spins on the nanodiamond surface can be used to hyperpolarize adsorbed liquid compoun…
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The widespread use of nanodiamond as a biomedical platform for drug-delivery, imaging, and sub-cellular tracking applications stems from their non-toxicity and unique quantum mechanical properties. Here, we extend this functionality to the domain of magnetic resonance, by demonstrating that the intrinsic electron spins on the nanodiamond surface can be used to hyperpolarize adsorbed liquid compounds at room temperature. By combining relaxation measurements with hyperpolarization, spins on the surface of the nanodiamond can be distinguished from those in the bulk liquid. These results are likely of use in signaling the controlled release of pharmaceutical payloads.
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Submitted 22 June, 2016;
originally announced June 2016.
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Flexible superconducting Nb transmission lines on thin film polyimide for quantum computing applications
Authors:
David B. Tuckerman,
Michael C. Hamilton,
David J. Reilly,
Rujun Bai,
George A. Hernandez,
John M. Hornibrook,
John A. Sellers,
Charles D. Ellis
Abstract:
We describe progress and initial results achieved towards the goal of develo** integrated multi-conductor arrays of shielded controlled-impedance flexible superconducting transmission lines with ultra-miniature cross sections and wide bandwidths (dc to >10 GHz) over meter-scale lengths. Intended primarily for use in future scaled-up quantum computing systems, such flexible thin-film Nb/polyimide…
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We describe progress and initial results achieved towards the goal of develo** integrated multi-conductor arrays of shielded controlled-impedance flexible superconducting transmission lines with ultra-miniature cross sections and wide bandwidths (dc to >10 GHz) over meter-scale lengths. Intended primarily for use in future scaled-up quantum computing systems, such flexible thin-film Nb/polyimide ribbon cables provide a physically compact and ultra-low thermal conductance alternative to the rapidly increasing number of discrete coaxial cables that are currently used by quantum computing experimentalists to transmit signals between the low-temperature stages (from ~ 4 K down to ~ 20 mK) of a dilution refrigerator. S-parameters are presented for 2-metal layer Nb microstrip structures with lengths ranging up to 550 mm. Weakly coupled open-circuit microstrip resonators provided a sensitive measure of the overall transmission line loss as a function of frequency, temperature, and power. Two common polyimide dielectrics, one conventional and the other photo-definable (PI-2611 and HD-4100, respectively) were compared. Our most striking result, not previously reported to our knowledge, was that the dielectric loss tangents of both polyimides are remarkably low at deep cryogenic temperatures, typically 100$\times$ smaller than corresponding room temperature values. This enables fairly long-distance transmission of microwave signals without excessive attenuation and permits usefully high rf power levels to be transmitted without creating excessive dielectric heating. We observed loss tangents as low as 2.2$\times$10$^{-5}$ at 20 mK. Our fabrication techniques could be extended to more complex structures such as multiconductor, multi-layer stripline or rectangular coax, and integrated attenuators and thermalization structures.
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Submitted 14 June, 2016;
originally announced June 2016.
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On-Chip Microwave Quantum Hall Circulator
Authors:
A. C. Mahoney,
J. I. Colless,
S. J. Pauka,
J. M. Hornibrook,
J. D. Watson,
G. C. Gardner,
M. J. Manfra,
A. C. Doherty,
D. J. Reilly
Abstract:
Circulators are non-reciprocal circuit elements integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their non-reciprocity arises from the interference of microwaves over the centimetre-scale of the signal wavelength in the presence of bulky magnetic media that break time-reversal symmetry. Here we realize a complet…
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Circulators are non-reciprocal circuit elements integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their non-reciprocity arises from the interference of microwaves over the centimetre-scale of the signal wavelength in the presence of bulky magnetic media that break time-reversal symmetry. Here we realize a completely passive on-chip microwave circulator with size one-thousandth the wavelength by exploiting the chiral, slow-light response of a 2-dimensional electron gas (2DEG) in the quantum Hall regime. For an integrated GaAs device with 330 um diameter and 1 GHz centre frequency, a non-reciprocity of 25 dB is observed over a 50 MHz bandwidth. Furthermore, the direction of circulation can be selected dynamically by varying the magnetic field, an aspect that may enable reconfigurable passive routing of microwave signals on-chip.
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Submitted 4 January, 2016;
originally announced January 2016.
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Hyperpolarized Nanodiamond with Long Spin Relaxation Times
Authors:
Ewa Rej,
Torsten Gaebel,
Thomas Boele,
David E. J. Waddington,
David J. Reilly
Abstract:
The use of hyperpolarized agents in magnetic resonance (MR), such as 13C-labeled compounds, enables powerful new imaging and detection modalities that stem from a 10,000-fold boost in signal. A major challenge for the future of the hyperpolarizaton technique is the inherently short spin relaxation times, typically < 60 seconds for 13C liquid-state compounds, which limit the time that the signal re…
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The use of hyperpolarized agents in magnetic resonance (MR), such as 13C-labeled compounds, enables powerful new imaging and detection modalities that stem from a 10,000-fold boost in signal. A major challenge for the future of the hyperpolarizaton technique is the inherently short spin relaxation times, typically < 60 seconds for 13C liquid-state compounds, which limit the time that the signal remains boosted. Here, we demonstrate that 1.1% natural abundance 13C spins in synthetic nanodiamond (ND) can be hyperpolarized at cryogenic and room temperature without the use of toxic free- radicals, and, owing to their solid-state environment, exhibit relaxation times exceeding 1 hour. Combined with the already established applications of NDs in the life-sciences as inexpensive fluorescent markers and non-cytotoxic substrates for gene and drug delivery, these results extend the theranostic capabilities of nanoscale diamonds into the domain of hyperpolarized MR.
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Submitted 22 February, 2015;
originally announced February 2015.
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Cryogenic Control Architecture for Large-Scale Quantum Computing
Authors:
J. M. Hornibrook,
J. I. Colless,
I. D. Conway Lamb,
S. J. Pauka,
H. Lu,
A. C. Gossard,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experim…
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Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experiments. Here, we report a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm such as an error correcting code. We demonstrate the basic principles of this architecture in a configuration that distributes components of the control system across different temperature stages of a dilution refrigerator, as determined by the available cooling power. The combined setup includes a cryogenic field-programmable gate array (FPGA) controlling a switching matrix at 20 millikelvin which, in turn, manipulates a semiconductor qubit.
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Submitted 8 September, 2014;
originally announced September 2014.
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Modular Cryogenic Interconnects for Multi-Qubit Devices
Authors:
J. I. Colless,
D. J. Reilly
Abstract:
We have developed a modular interconnect platform for the control and readout of multiple solid-state qubits at cryogenic temperatures. The setup provides 74 filtered dc-bias connections, 32 control and readout connections with a bandwidth above 5 GHz, and 4 microwave feed lines that allow operation to above 10 GHz. The incorporation of a radio-frequency (rf) interposer enables the platform to be…
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We have developed a modular interconnect platform for the control and readout of multiple solid-state qubits at cryogenic temperatures. The setup provides 74 filtered dc-bias connections, 32 control and readout connections with a bandwidth above 5 GHz, and 4 microwave feed lines that allow operation to above 10 GHz. The incorporation of a radio-frequency (rf) interposer enables the platform to be separated into two printed circuit boards, decoupling the simple board that is bonded to the qubit chip from the multilayer board that incorporates expensive connectors and components. This modular approach lifts the burden of duplicating complex interconnect circuits for every prototype device. We report the performance of this platform at milli-Kelvin temperatures, including signal transmission and crosstalk measurements.
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Submitted 14 May, 2014;
originally announced May 2014.
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Frequency Multiplexing for Readout of Spin Qubits
Authors:
J. M. Hornibrook,
J. I. Colless,
A. C. Mahoney,
X. G. Croot,
S. Blanvillain,
H. Lu,
A. C. Gossard,
D. J. Reilly
Abstract:
We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum…
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We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum dot in the few-electron regime, and further demonstrate operation of a 10-channel multiplexing device. Limitations for scaling spin qubit readout to large numbers of multiplexed channels is discussed.
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Submitted 18 December, 2013;
originally announced December 2013.
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Microwave Absorption by a Mesoscopic Quantum Hall Droplet
Authors:
Jennifer Cano,
Andrew C. Doherty,
Chetan Nayak,
David J. Reilly
Abstract:
We consider the absorption of microwaves by a quantum Hall droplet. We show that the number and velocities of charged edge modes can be directly measured from a droplet of known shape. In contrast to standard transport measurements, different edge equilibration regimes can be accessed in the same device. If there is a quantum point contact in the droplet, then quasiparticle properties, including b…
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We consider the absorption of microwaves by a quantum Hall droplet. We show that the number and velocities of charged edge modes can be directly measured from a droplet of known shape. In contrast to standard transport measurements, different edge equilibration regimes can be accessed in the same device. If there is a quantum point contact in the droplet, then quasiparticle properties, including braiding statistics, can be observed. Their effects are manifested as modulations of the microwave absorption spectrum that are, notably, first-order in the tunneling amplitude at the point contact.
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Submitted 3 July, 2013;
originally announced July 2013.
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Dynamical Steady-States in Driven Quantum Systems
Authors:
T. M. Stace,
A. C. Doherty,
D. J. Reilly
Abstract:
We derive dynamical equations for a driven, dissipative quantum system in which the environment- induced relaxation rate is comparable to the Rabi frequency, avoiding assumptions on the frequency dependence of the environmental coupling. When the environmental coupling varies significantly on the scale of the Rabi frequency, secular or rotating wave approximations break down. Our approach avoids t…
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We derive dynamical equations for a driven, dissipative quantum system in which the environment- induced relaxation rate is comparable to the Rabi frequency, avoiding assumptions on the frequency dependence of the environmental coupling. When the environmental coupling varies significantly on the scale of the Rabi frequency, secular or rotating wave approximations break down. Our approach avoids these approximations, yielding dynamical, periodic steady-states. This is important for the qualitative and quantitative description of the interaction between driven quantum dots and their phonon environment. The theory agrees well with recent experiments, describing the transition from asymmetric unsaturated resonances at weak driving to population inversion at strong driving.
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Submitted 7 June, 2013; v1 submitted 4 June, 2013;
originally announced June 2013.
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Stimulated Phonon Emission in a Driven Double Quantum Dot
Authors:
J. I. Colless,
X. G. Croot,
T. M. Stace,
A. C. Doherty,
S. D. Barrett,
H. Lu,
A. C. Gossard,
D. J. Reilly
Abstract:
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential…
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The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential hindrance for quantum computing architectures that can be charge-sensitive during certain operations. Here we examine phonon generation in a GaAs double dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analog of the Raman effect, stimulated phonon emission is shown to produce population inversion of a two-level system and provides spectroscopic signatures of the phononic environment created by the nanoscale device geometry.
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Submitted 25 May, 2013;
originally announced May 2013.
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Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
Authors:
J. I. Colless,
A. C. Mahoney,
J. M. Hornibrook,
A. C. Doherty,
D. J. Reilly,
H. Lu,
A. C. Gossard
Abstract:
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersi…
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We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersive gate-sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays.
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Submitted 17 October, 2012;
originally announced October 2012.
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Suppressing On-Chip EM Crosstalk for Spin Qubit Devices
Authors:
S. Blanvillain,
J. I. Colless,
D. J. Reilly,
H. Lu,
A. C. Gossard
Abstract:
We report the development and performance of on-chip interconnects designed to suppress electromagnetic (EM) crosstalk in spin qubit device architectures with the large number of gate electrodes needed for multi- qubit operation. Our design improves the performance of typical device interconnects via the use of minia- turised ohmic contacts and interspersed ground guards. Low temperature measureme…
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We report the development and performance of on-chip interconnects designed to suppress electromagnetic (EM) crosstalk in spin qubit device architectures with the large number of gate electrodes needed for multi- qubit operation. Our design improves the performance of typical device interconnects via the use of minia- turised ohmic contacts and interspersed ground guards. Low temperature measurements and numerical simulation confirm that control and readout signal crosstalk can be suppressed to levels of order 1%, from dc to 1 GHz.
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Submitted 17 May, 2012;
originally announced May 2012.
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Superconducting Resonators with Parasitic Electromagnetic Environments
Authors:
J. M. Hornibrook,
E. E. Mitchell,
D. J. Reilly
Abstract:
Parasitic electromagnetic fields are shown to strongly suppress the quality (Q)-factor of superconducting coplanar waveguide resonators via non-local dissipation in the macroscopic environment. Numerical simulation and low temperature measurements demonstrate how this parasitic loss can be reduced, establishing a Lorentzian lineshape in the resonator frequency response and yielding a loaded Q-fact…
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Parasitic electromagnetic fields are shown to strongly suppress the quality (Q)-factor of superconducting coplanar waveguide resonators via non-local dissipation in the macroscopic environment. Numerical simulation and low temperature measurements demonstrate how this parasitic loss can be reduced, establishing a Lorentzian lineshape in the resonator frequency response and yielding a loaded Q-factor of 2.4 x 10^5 for niobium devices on sapphire substrates. In addition, we report the dependence of the Q and resonance frequency shift Delta f_0 with input power and temperature in the limit where loss from two-level systems in the dielectric dominate.
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Submitted 20 March, 2012;
originally announced March 2012.
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Cryogenic High-Frequency Readout and Control Platform for Spin Qubits
Authors:
J. I. Colless,
D. J. Reilly
Abstract:
We have developed a cryogenic platform for the control and readout of spin qubits that comprises a high density of dc and radio frequency sample interconnects based on a set of coupled printed circuit boards. The modular setup incorporates 24 filtered dc lines, 14 control and readout lines with bandwidth from dc to above 6 GHz, and 2 microwave connections for excitation to 40 GHz. We report the pe…
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We have developed a cryogenic platform for the control and readout of spin qubits that comprises a high density of dc and radio frequency sample interconnects based on a set of coupled printed circuit boards. The modular setup incorporates 24 filtered dc lines, 14 control and readout lines with bandwidth from dc to above 6 GHz, and 2 microwave connections for excitation to 40 GHz. We report the performance of this platform, including signal integrity and crosstalk measurements and discuss design criteria for constructing sample interconnect technology needed for multi-qubit devices.
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Submitted 29 November, 2011; v1 submitted 28 November, 2011;
originally announced November 2011.
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Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
Authors:
C. Barthel,
D. J. Reilly,
C. M. Marcus,
M. P. Hanson,
A. C. Gossard
Abstract:
We report repeated single-shot measurements of the two-electron spin state in a GaAs double quantum dot. The readout scheme allows measurement with fidelity above 90% with a 7 microsecond cycle time. Hyperfine-induced precession between singlet and triplet states of the two-electron system are directly observed, as nuclear Overhauser fields are quasi-static on the time scale of the measurement c…
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We report repeated single-shot measurements of the two-electron spin state in a GaAs double quantum dot. The readout scheme allows measurement with fidelity above 90% with a 7 microsecond cycle time. Hyperfine-induced precession between singlet and triplet states of the two-electron system are directly observed, as nuclear Overhauser fields are quasi-static on the time scale of the measurement cycle. Repeated measurements on millisecond to second time scales reveal evolution of the nuclear environment.
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Submitted 18 October, 2009; v1 submitted 2 February, 2009;
originally announced February 2009.
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Suppressing Spin Qubit Dephasing by Nuclear State Preparation
Authors:
D. J. Reilly,
J. M. Taylor,
J. R. Petta,
C. M. Marcus,
M. P. Hanson,
A. C. Gossard
Abstract:
Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are the dominant source of spin decoherence. We report a method of preparing the nuclear spin environment that suppresses the relevant component…
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Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are the dominant source of spin decoherence. We report a method of preparing the nuclear spin environment that suppresses the relevant component of nuclear spin fluctuations below its equilibrium value by a factor of ~ 70, extending the inhomogeneous dephasing time for the two-electron spin state beyond 1 microsecond. The nuclear state can be readily prepared by electrical gate manipulation and persists for > 10 seconds.
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Submitted 9 July, 2008;
originally announced July 2008.
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Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot
Authors:
D. J. Reilly,
J. M. Taylor,
J. R. Petta,
C. M. Marcus,
M. P. Hanson,
A. C. Gossard
Abstract:
Coherent two-level systems, or qubits, based on electron spins in GaAs quantum dots are strongly coupled to the nuclear spins of the host lattice via the hyperfine interaction. Realizing nuclear spin control would likely improve electron spin coherence and potentially enable the nuclear environment to be harnessed for the long-term storage of quantum information. Toward this goal, we report expe…
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Coherent two-level systems, or qubits, based on electron spins in GaAs quantum dots are strongly coupled to the nuclear spins of the host lattice via the hyperfine interaction. Realizing nuclear spin control would likely improve electron spin coherence and potentially enable the nuclear environment to be harnessed for the long-term storage of quantum information. Toward this goal, we report experimental control of the relaxation of nuclear spin polarization in a gate-defined two-electron GaAs double quantum dot. A cyclic gate-pulse sequence transfers the spin of an electron pair to the host nuclear system, establishing a local nuclear polarization that relaxes on a time scale of seconds. We find nuclear relaxation depends on magnetic field and gate-controlled two-electron exchange, consistent with a model of electron mediated nuclear spin diffusion.
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Submitted 20 March, 2008;
originally announced March 2008.
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Measurement of Temporal Correlations of the Overhauser Field in a Double Quantum Dot
Authors:
D. J. Reilly,
J. M. Taylor,
E. A. Laird,
J. R. Petta,
C. M. Marcus,
M. P. Hanson,
A. C. Gossard
Abstract:
In quantum dots made from materials with nonzero nuclear spins, hyperfine coupling creates a fluctuating effective Zeeman field (Overhauser field) felt by electrons, which can be a dominant source of spin qubit decoherence. We characterize the spectral properties of the fluctuating Overhauser field in a GaAs double quantum dot by measuring correlation functions and power spectra of the rate of s…
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In quantum dots made from materials with nonzero nuclear spins, hyperfine coupling creates a fluctuating effective Zeeman field (Overhauser field) felt by electrons, which can be a dominant source of spin qubit decoherence. We characterize the spectral properties of the fluctuating Overhauser field in a GaAs double quantum dot by measuring correlation functions and power spectra of the rate of singlet-triplet mixing of two separated electrons. Away from zero field, spectral weight is concentrated below 10 Hz, with 1/f^2 dependence on frequency, f. This is consistent with a model of nuclear spin diffusion, and indicates that decoherence can be largely suppressed by echo techniques.
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Submitted 20 October, 2008; v1 submitted 24 December, 2007;
originally announced December 2007.
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Fast Single-Charge Sensing with an rf Quantum Point Contact
Authors:
D. J. Reilly,
C. M. Marcus,
M. P. Hanson,
A. C. Gossard
Abstract:
We report high-bandwidth charge sensing measurements using a GaAs quantum point contact embedded in a radio frequency impedance matching circuit (rf-QPC). With the rf-QPC biased near pinch-off where it is most sensitive to charge, we demonstrate a conductance sensitivity of 5x10^(-6) e^(2)/h Hz^(-1/2) with a bandwidth of 8 MHz. Single-shot readout of a proximal few-electron double quantum dot is…
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We report high-bandwidth charge sensing measurements using a GaAs quantum point contact embedded in a radio frequency impedance matching circuit (rf-QPC). With the rf-QPC biased near pinch-off where it is most sensitive to charge, we demonstrate a conductance sensitivity of 5x10^(-6) e^(2)/h Hz^(-1/2) with a bandwidth of 8 MHz. Single-shot readout of a proximal few-electron double quantum dot is investigated in a mode where the rf-QPC back-action is rapidly switched.
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Submitted 28 August, 2007; v1 submitted 19 July, 2007;
originally announced July 2007.
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Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
Authors:
Yongjie Hu,
Hugh H. O. Churchill,
David J. Reilly,
Jie Xiang,
Charles M. Lieber,
Charles M. Marcus
Abstract:
Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis…
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Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.
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Submitted 15 June, 2007;
originally announced June 2007.
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Current Noise in Quantum Point Contacts
Authors:
L. DiCarlo,
Yiming Zhang,
D. T. McClure,
D. J. Reilly,
C. M. Marcus,
L. N. Pfeiffer,
K. W. West,
M. P. Hanson,
A. C. Gossard
Abstract:
We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias, shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature…
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We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias, shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus (where shot noise vanishes), agrees quantitatively with a model of bias-dependent electron heating.
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Submitted 30 April, 2007;
originally announced April 2007.
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Shot-Noise Signatures of 0.7 Structure and Spin in a Quantum Point Contact
Authors:
L. DiCarlo,
Y. Zhang,
D. T. McClure,
D. J. Reilly,
C. M. Marcus,
L. N. Pfeiffer,
K. W. West
Abstract:
We report simultaneous measurement of shot noise and dc transport in a quantum point contact as a function of source-drain bias, gate voltage, and in-plane magnetic field. Shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison…
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We report simultaneous measurement of shot noise and dc transport in a quantum point contact as a function of source-drain bias, gate voltage, and in-plane magnetic field. Shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement.
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Submitted 8 June, 2006; v1 submitted 1 April, 2006;
originally announced April 2006.
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Ion implanted Si:P double-dot with gate tuneable interdot coupling
Authors:
V. C. Chan,
T. M. Buehler,
A. J. Ferguson,
D. R. McCamey,
D. J. Reilly,
A. S. Dzurak,
R. G. Clark,
C. Yang,
D. N. Jamieson
Abstract:
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned fr…
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We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned from weak to strong coupling. In the weak interdot coupling regime, the system exhibits well-defined double-dot charging behavior. By contrast, in the strong interdot coupling regime, the system behaves as a single-dot.
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Submitted 23 February, 2006;
originally announced February 2006.
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Phenomenology of the 0.7 conductance feature
Authors:
D. J. Reilly,
Y. Zhang,
L. DiCarlo
Abstract:
We describe a phenomenological model for the conductance feature near $0.7 \times 2e^2/h$ that occurs in quantum point contacts. We focus on the transconductance at finite source-drain bias and contrast our model with the results expected from a single-particle picture. Good agreement is seen in comparing the model with experimental data, taken on ultra-low-disorder GaAs induced electron systems…
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We describe a phenomenological model for the conductance feature near $0.7 \times 2e^2/h$ that occurs in quantum point contacts. We focus on the transconductance at finite source-drain bias and contrast our model with the results expected from a single-particle picture. Good agreement is seen in comparing the model with experimental data, taken on ultra-low-disorder GaAs induced electron systems. Although simple, our phenomenology suggests important boundary conditions for an underlying microscopic theory.
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Submitted 6 January, 2006;
originally announced January 2006.
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Charge sensing in carbon nanotube quantum dots on microsecond timescales
Authors:
M. J. Biercuk,
D. J. Reilly,
T. M. Buehler,
V. C. Chan,
J. M. Chow,
R. G. Clark,
C. M. Marcus
Abstract:
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows fast measurement of transport through the nanotube dot. Charge stabilit…
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We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows fast measurement of transport through the nanotube dot. Charge stability diagrams for the nanotube dot in the Coulomb blockade regime show extended Coulomb diamonds into the high-bias regime, as well as even-odd filling effects, revealed in charge sensing data.
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Submitted 20 October, 2005;
originally announced October 2005.