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Design of linear block copolymers and ABC star terpolymers that produce two length scales at phase separation
Authors:
Merin Joseph,
Daniel J. Read,
Alastair M. Rucklidge
Abstract:
Quasicrystals (materials with long range order but without the usual spatial periodicity of crystals) were discovered in several soft matter systems in the last twenty years. The stability of quasicrystals has been attributed to the presence of two prominent length scales in a specific ratio, which is 1.93 for the twelve-fold quasicrystals most commonly found in soft matter. We propose design crit…
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Quasicrystals (materials with long range order but without the usual spatial periodicity of crystals) were discovered in several soft matter systems in the last twenty years. The stability of quasicrystals has been attributed to the presence of two prominent length scales in a specific ratio, which is 1.93 for the twelve-fold quasicrystals most commonly found in soft matter. We propose design criteria for block copolymers such that quasicrystal-friendly length scales emerge at the point of phase separation from a melt, basing our calculations on the Random Phase Approximation. We consider two block copolymer families: linear chains containing two different monomer types in blocks of different lengths, and ABC star terpolymers. In all examples, we are able to identify parameter windows with the two length scales having a ratio of 1.93. The models that we consider that are simplest for polymer synthesis are, first, a monodisperse A_L B A_S B melt and, second, a model based on random reactions from a mixture of A_L, A_S and B chains: both feature the length scale ratio of 1.93 and should be relatively easy to synthesise.
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Submitted 11 October, 2023; v1 submitted 27 April, 2023;
originally announced April 2023.
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Tuning the Band Topology of GdSb by Epitaxial Strain
Authors:
Hadass S. Inbar,
Dai Q. Ho,
Shouvik Chatterjee,
Aaron N. Engel,
Shoaib Khalid,
Connor P. Dempsey,
Mihir Pendharkar,
Yu Hao Chang,
Shinichi Nishihaya,
Alexei V. Fedorov,
Donghui Lu,
Makoto Hashimoto,
Dan Read,
Anderson Janotti,
Christopher J. Palmstrøm
Abstract:
Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in b…
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Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.
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Submitted 18 April, 2023; v1 submitted 28 November, 2022;
originally announced November 2022.
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Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
Authors:
Hadass S. Inbar,
Dai Q. Ho,
Shouvik Chatterjee,
Mihir Pendharkar,
Aaron N. Engel,
Jason T. Dong,
Shoaib Khalid,
Yu Hao Chang,
Taozhi Guo,
Alexei V. Fedorov,
Donghui Lu,
Makoto Hashimoto,
Dan Read,
Anderson Janotti,
Christopher J. Palmstrøm
Abstract:
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin…
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Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study map** the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.
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Submitted 25 October, 2022; v1 submitted 4 August, 2022;
originally announced August 2022.
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Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
Authors:
Shouvik Chatterjee,
Felipe Crasto de Lima,
John A. Logan,
Yuan Fang,
Hadass Inbar,
Aranya Goswami,
Connor Dempsey,
Shoaib Khalid,
Tobias Brown-Heft,
Yu-Hao Chang,
Taozhi Guo,
Daniel Pennacchio,
Nathaniel Wilson,
Jason Dong,
Shalinee Chikara,
Alexey Suslov,
Alexei V. Fedorov,
Dan Read,
Jennifer Cano,
Anderson Janotti,
Christopher J. Palmstrom
Abstract:
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controll…
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Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.
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Submitted 3 January, 2022; v1 submitted 23 December, 2020;
originally announced December 2020.
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Fluctuating viscoelasticity based on a finite number of dumbbells
Authors:
Markus Hütter,
Peter D. Olmsted,
Daniel J. Read
Abstract:
Two alternative routes are taken to derive, on the basis of the dynamics of a finite number of dumbbells, viscoelasticity in terms of a conformation tensor with fluctuations. The first route is a direct approach using stochastic calculus only, and it serves as a benchmark for the second route, which is guided by thermodynamic principles. In the latter, the Helmholtz free energy and a generalized r…
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Two alternative routes are taken to derive, on the basis of the dynamics of a finite number of dumbbells, viscoelasticity in terms of a conformation tensor with fluctuations. The first route is a direct approach using stochastic calculus only, and it serves as a benchmark for the second route, which is guided by thermodynamic principles. In the latter, the Helmholtz free energy and a generalized relaxation tensor play a key role. It is shown that the results of the two routes agree only if a finite-size contribution to the Helmholtz free energy of the conformation tensor is taken into account. Using statistical mechanics, this finite-size contribution is derived explicitly in this paper for a large class of models; this contribution is non-zero whenever the number of dumbbells in the volume of observation is finite. It is noted that the generalized relaxation tensor for the conformation tensor does not need any finite-size correction.
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Submitted 5 November, 2020;
originally announced November 2020.
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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
Authors:
Shouvik Chatterjee,
Shoaib Khalid,
Hadass S. Inbar,
Taozhi Guo,
Yu-Hao Chang,
Elliot Young,
Alexei V. Fedorov,
Dan Read,
Anderson Janotti,
Christopher J. Palmstrøm
Abstract:
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturat…
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Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole gas and is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultra-thin limit. Our work lays out a general strategy of utilizing confined thin film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously, provides insights into its origin.
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Submitted 5 January, 2022; v1 submitted 14 February, 2020;
originally announced February 2020.
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Combined force-torque spectroscopy of proteins by means of multiscale molecular simulation
Authors:
Thijs W. G. van der Heijden,
Daniel J. Read,
Oliver G. Harlen,
Paul van der Schoot,
Sarah A. Harris,
Cornelis Storm
Abstract:
Assessing the structural properties of large proteins is important to gain an understanding of their function in, e.g., biological systems or biomedical applications. We propose a method to examine the mechanical properties of proteins subject to applied forces by means of multiscale simulation. We consider both stretching and torsional forces, which can be applied independently of each other. We…
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Assessing the structural properties of large proteins is important to gain an understanding of their function in, e.g., biological systems or biomedical applications. We propose a method to examine the mechanical properties of proteins subject to applied forces by means of multiscale simulation. We consider both stretching and torsional forces, which can be applied independently of each other. We apply torsional forces to a coarse-grained continuum model of the antibody protein immunoglobulin G (IgG) using Fluctuating Finite Element Analysis and identify the area of strongest deformation. This region is essential to the torsional properties of the molecule as a whole, as it represents the softest, most deformable domain. We subject this part of the molecule to torques and stretching forces on an atomistic level, using molecular dynamics simulations, in order to investigate its torsional properties. We calculate the torsional resistance as a function of the rotation of the domain, while subjecting it to various stretching forces. We learn how these obtained torsion profiles evolve with increasing stretching force and show that they exhibit torsion stiffening, which is in qualitative agreement with experimental findings. We argue that combining the torsion profiles for various stretching forces effectively results in a combined force-torque spectroscopy analysis, which may serve as a mechanical signature for the examined molecule.
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Submitted 7 October, 2019;
originally announced October 2019.
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Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
Authors:
Shouvik Chatterjee,
Shoaib Khalid,
Hadass S. Inbar,
Aranya Goswami,
Felipe Crasto de Lima,
Abhishek Sharan,
Fernando P. Sabino,
Tobias L. Brown-Heft,
Yu-Hao Chang,
Alexei V. Fedorov,
Dan Read,
Anderson Janotti,
Christopher J. Palmstrøm
Abstract:
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation i…
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Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.
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Submitted 25 March, 2019; v1 submitted 31 January, 2019;
originally announced February 2019.
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Two-photon Lithography for 3D Magnetic Nanostructure Fabrication
Authors:
Gwilym Williams,
Matthew Hunt,
Benedikt Boehm,
Andrew May,
Michael Taverne,
Daniel Ho,
Sean Giblin,
Dan Read,
John Rarity,
Rolf Allenspach,
Sam Ladak
Abstract:
Ferromagnetic materials have been utilised as recording media within data storage devices for many decades. Confinement of the material to a two dimensional plane is a significant bottleneck in achieving ultra-high recording densities and this has led to the proposition of three dimensional (3D) racetrack memories that utilise domain wall propagation along nanowires. However, the fabrication of 3D…
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Ferromagnetic materials have been utilised as recording media within data storage devices for many decades. Confinement of the material to a two dimensional plane is a significant bottleneck in achieving ultra-high recording densities and this has led to the proposition of three dimensional (3D) racetrack memories that utilise domain wall propagation along nanowires. However, the fabrication of 3D magnetic nanostructures of complex geometry is highly challenging and not easily achievable with standard lithography techniques. Here, by using a combination of two-photon lithography and electrochemical deposition, we show a new approach to construct 3D magnetic nanostructures of complex geometry. The magnetic properties are found to be intimately related to the 3D geometry of the structure and magnetic imaging experiments provide evidence of domain wall pinning at a 3D nanostructured junction.
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Submitted 11 July, 2017;
originally announced July 2017.
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Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotracks
Authors:
J. Sampaio,
L. O'Brien,
D. Petit,
D. E. Read,
E. R. Lewis,
H. T. Zeng,
L. Thevenard,
S. Cardoso,
R. P. Cowburn
Abstract:
The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, b…
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The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, but that a travelling DW can also induce the depinning of DWs in near-by tracks. These effects may have great implications for some proposed high density magnetic devices (e.g. racetrack memory, DW logic circuits, or DW-based MRAM).
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Submitted 18 March, 2013;
originally announced March 2013.
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Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices
Authors:
A. M. Gilbertson,
M. Fearn,
A. Kormányos,
D. E. Read,
C. J. Lambert,
M. T. Emeny,
T. Ashley,
S. A. Solin,
L. F. Cohen
Abstract:
We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental…
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We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.
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Submitted 20 September, 2010;
originally announced September 2010.
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Near-field interaction between domain walls in adjacent Permalloy nanowires
Authors:
Liam O'Brien,
D. Petit,
H. T. Zeng,
E. R. Lewis,
J. Sampaio,
A. V. Jausovec,
D. E. Read,
R. P. Cowburn
Abstract:
The magnetostatic interaction between two oppositely charged transverse domain walls (DWs)in adjacent Permalloy nanowires is experimentally demonstrated. The dependence of the pinning strength on wire separation is investigated for distances between 13 and 125 nm, and depinning fields up to 93 Oe are measured. The results can be described fully by considering the interaction between the full com…
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The magnetostatic interaction between two oppositely charged transverse domain walls (DWs)in adjacent Permalloy nanowires is experimentally demonstrated. The dependence of the pinning strength on wire separation is investigated for distances between 13 and 125 nm, and depinning fields up to 93 Oe are measured. The results can be described fully by considering the interaction between the full complex distribution of magnetic charge within rigid, isolated DWs. This suggests the DW internal structure is not appreciably disturbed by the pinning potential, and that they remain rigid although the pinning strength is significant. This work demonstrates the possibility of non-contact DW trap** without DW perturbation and full continuous flexibility of the pinning potential type and strength. The consequence of the interaction on DW based data storage schemes is evaluated.
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Submitted 6 March, 2009;
originally announced March 2009.
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Stochastic polarization formation in exciton-polariton Bose-Einstein condensates
Authors:
D. Read,
P. J. Membry,
T. C. H. Liew,
Yuri G. Rubo,
A. V. Kavokin
Abstract:
We demonstrate theoretically the spontaneous formation of a stochastic polarization in exciton-polariton Bose-Einstein condensates in planar microcavities under pulsed excitation. Below the threshold pum** intensity (dependent on the polariton life-time) the average polarization degree is close to zero, whilst above threshold the condensate acquires a polarization described by a (pseudospin) v…
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We demonstrate theoretically the spontaneous formation of a stochastic polarization in exciton-polariton Bose-Einstein condensates in planar microcavities under pulsed excitation. Below the threshold pum** intensity (dependent on the polariton life-time) the average polarization degree is close to zero, whilst above threshold the condensate acquires a polarization described by a (pseudospin) vector with random orientation, in general. We establish the link between second order coherence of the polariton condensate and the distribution function of its polarization. We examine also the mechanisms of polarization dephasing and relaxation.
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Submitted 7 July, 2008;
originally announced July 2008.
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Domain wall pinning and potential landscapes created by constrictions and protrusions in ferromagnetic nanowires
Authors:
Dorothee Petit,
Ana-Vanessa Jausovec,
Dan Read,
Russell P. Cowburn
Abstract:
The potential experienced by transverse domain walls (TDWs) in the vicinity of asymmetric constrictions or protrusions in thin Permalloy nanowires is probed using spatially resolved magneto-optical Kerr effect measurements. Both types of traps are found to act as pinning centers for DWs. The strength of pinning is found to depend on the trap type as well as on the chirality of the incoming DW; b…
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The potential experienced by transverse domain walls (TDWs) in the vicinity of asymmetric constrictions or protrusions in thin Permalloy nanowires is probed using spatially resolved magneto-optical Kerr effect measurements. Both types of traps are found to act as pinning centers for DWs. The strength of pinning is found to depend on the trap type as well as on the chirality of the incoming DW; both types of traps are seen to act either as potential wells or potential barriers, also depending on the chirality of the DW. Micromagnetic simulations have been performed that are in good qualitative agreement with the experimental results.
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Submitted 7 November, 2008; v1 submitted 30 November, 2007;
originally announced November 2007.
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Superconducting quantum phase transitions tuned by magnetic impurity and magnetic field in ultrathin a-Pb films
Authors:
J. S. Parker,
D. E. Read,
A. Kumar,
P. Xiong
Abstract:
Superconducting quantum phase transitions tuned by disorder (d), paramagnetic impurity (MI) and perpendicular magnetic field (B) have been studied in homogeneously disordered ultrathin a-Pb films. The MI-tuned transition is characterized by progressive suppression of the critical temperature to zero and a continuous transition to a weakly insulating normal state with increasing MI density. In al…
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Superconducting quantum phase transitions tuned by disorder (d), paramagnetic impurity (MI) and perpendicular magnetic field (B) have been studied in homogeneously disordered ultrathin a-Pb films. The MI-tuned transition is characterized by progressive suppression of the critical temperature to zero and a continuous transition to a weakly insulating normal state with increasing MI density. In all important aspects, the d-tuned transition closely resembles the MI-tuned transition and both appear to be fermionic in nature. The B-tuned transition is qualitatively different and probably bosonic. In the critical region it exhibits transport behavior that suggests a B-induced mesoscale phase separation and presence of Cooper pairing in the insulating state.
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Submitted 5 July, 2006;
originally announced July 2006.
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A model of hyphal tip growth involving microtubule-based transport
Authors:
K. E. P. Sugden,
M. R. Evans,
W. C. K. Poon,
N. D. Read
Abstract:
We propose a simple model for mass transport within a fungal hypha and its subsequent growth. Inspired by the role of microtubule-transported vesicles, we embody the internal dynamics of mass inside a hypha with mutually excluding particles progressing stochastically along a growing one-dimensional lattice. The connection between long range transport of materials for growth, and the resulting ex…
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We propose a simple model for mass transport within a fungal hypha and its subsequent growth. Inspired by the role of microtubule-transported vesicles, we embody the internal dynamics of mass inside a hypha with mutually excluding particles progressing stochastically along a growing one-dimensional lattice. The connection between long range transport of materials for growth, and the resulting extension of the hyphal tip has not previously been addressed in the modelling literature. We derive and analyse mean-field equations for the model and present a phase diagram of its steady state behaviour, which we compare to simulations. We discuss our results in the context of the filamentous fungus, Neurospora crassa.
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Submitted 29 March, 2007; v1 submitted 9 May, 2006;
originally announced May 2006.
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Dynamic scaling in entangled mean-field gelation polymers
Authors:
Chinmay Das,
Daniel J. Read,
Mark A. Kelmanson,
Tom C. B. McLeish
Abstract:
We present a simple reaction kinetics model to describe the polymer synthesis used by Lusignan et al. (PRE, 60, 5657, 1999) to produce randomly branched polymers in the vulcanization class. Numerical solution of the rate equations gives probabilities for different connections in the final product, which we use to generate a numerical ensemble of representative molecules. All structural quantitie…
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We present a simple reaction kinetics model to describe the polymer synthesis used by Lusignan et al. (PRE, 60, 5657, 1999) to produce randomly branched polymers in the vulcanization class. Numerical solution of the rate equations gives probabilities for different connections in the final product, which we use to generate a numerical ensemble of representative molecules. All structural quantities probed by Lusignan et al. are in quantitative agreement with our results for the entire range of molecular weights considered. However, with detailed topological information available in our calculations, our estimate of the `rheologically relevant' linear segment length is smaller than that estimated by them. We use a numerical method based on tube model of polymer melts to calculate the rheological properties of such molecules. Results are in good agreement with experiment, except that in the case of the largest molecular weight samples our estimate of the zero-shear viscosity is significantly lower than the experimental findings. Using acid concentration as an indicator for closeness to the gelation transition, we show that the high-molecular-weight polymers considered are at the limit of mean-field behavior - which possibly is the reason for this disagreement. For a truly mean-field gelation class of model polymers, we numerically calculate the rheological properties for a range of segment lengths. Our calculations show that the tube theory with dynamical dilation predicts that, very close to the gelation limit, contribution to viscosity for this class of polymers is dominated by the contribution from constraint-release Rouse motion and the final viscosity exponent approaches Rouse-like value.
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Submitted 10 May, 2006;
originally announced May 2006.
