Showing 1–50 of 106 results for author: Ramesh, R

Optical Control of Adaptive Nanoscale Domain Networks

Authors: Marc Zajac, Tao Zhou, Tiannan Yang, Sujit Das, Yue Cao, Burak Guzelturk, Vladimir Stoica, Mathew Cherukara, John W. Freeland, Venkatraman Gopalan, Ramamoorthy Ramesh, Lane W. Martin, Long-Qing Chen, Martin Holt, Stephan Hruszkewycz, Haidan Wen

Abstract: Adaptive networks can sense and adjust to dynamic environments to optimize their performance. Understanding their nanoscale responses to external stimuli is essential for applications in nanodevices and neuromorphic computing. However, it is challenging to image such responses on the nanoscale with crystallographic sensitivity. Here, the evolution of nanodomain networks in (PbTiO3)n/(SrTiO3)n supe… ▽ More Adaptive networks can sense and adjust to dynamic environments to optimize their performance. Understanding their nanoscale responses to external stimuli is essential for applications in nanodevices and neuromorphic computing. However, it is challenging to image such responses on the nanoscale with crystallographic sensitivity. Here, the evolution of nanodomain networks in (PbTiO3)n/(SrTiO3)n superlattices was directly visualized in real space as the system adapts to ultrafast repetitive optical excitations that emulate controlled neural inputs. The adaptive response allows the system to explore a wealth of metastable states that were previously inaccessible. Their reconfiguration and competition were quantitatively measured by scanning x-ray nanodiffraction as a function of the number of applied pulses, in which crystallographic characteristics were quantitatively assessed by assorted diffraction patterns using unsupervised machine-learning methods. The corresponding domain boundaries and their connectivity were drastically altered by light, holding promise for light-programmable nanocircuits in analogy to neuroplasticity. Phase-field simulations elucidate that the reconfiguration of the domain networks is a result of the interplay between photocarriers and transient lattice temperature. The demonstrated optical control scheme and the uncovered nanoscopic insights open opportunities for remote control of adaptive nanoscale domain networks. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Optimizing Off-Axis Fields for Two-Axis Magnetometry with Point Defects

Authors: N. M. Beaver, N. Voce, P. Meisenheimer, R. Ramesh, P. Stevenson

Abstract: Vector magnetometry is an essential tool in characterizing the distribution of currents and magnetization in a broad range of systems. Point defect sensors, like the nitrogen vacancy (NV) center in diamond, have demonstrated impressive sensitivity and spatial resolution for detecting these fields. Measuring the vector field at a single point in space using single defects, however, remains an outst… ▽ More Vector magnetometry is an essential tool in characterizing the distribution of currents and magnetization in a broad range of systems. Point defect sensors, like the nitrogen vacancy (NV) center in diamond, have demonstrated impressive sensitivity and spatial resolution for detecting these fields. Measuring the vector field at a single point in space using single defects, however, remains an outstanding challenge. We demonstrate that careful optimization of the static bias field can enable simultaneous measurement of multiple magnetic field components with enhanced sensitivity by leveraging the nonlinear Zeeman shift from transverse magnetic fields. This work quantifies the trade-off between the increased frequency shift from second-order Zeeman effects with decreasing contrast as off-axis field components increase, demonstrating the measurement of multiple components of the magnetic field from an exemplar antiferromagnet with a complex magnetic texture. △ Less

Submitted 7 June, 2024; v1 submitted 15 April, 2024; originally announced April 2024.

Non-volatile spin transport in a single domain multiferroic

Authors: Sajid Husain, Isaac Harris, Peter Meisenheimer, Sukriti Mantri, Xinyan Li, Maya Ramesh, Piush Behera, Hossein Taghinejad, Jaegyu Kim, Pravin Kavle, Shiyu Zhou, Tae Yeon Kim, Hongrui Zhang, Paul Stephenson, James G. Analytis, Darrell Schlom, Sayeef Salahuddin, Jorge Íñiguez-González, Bin Xu, Lane W. Martin, Lucas Caretta, Yimo Han, Laurent Bellaiche, Zhi Yao, Ramamoorthy Ramesh

Abstract: Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO$_3$ the coupling between antiferromagnetic and polar order imposes yet another boun… ▽ More Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO$_3$ the coupling between antiferromagnetic and polar order imposes yet another boundary condition on spin transport. Thus, understanding the fundamentals of spin transport in such systems requires a single domain, a single crystal. We show that through Lanthanum(La) substitution, a single ferroelectric domain can be engineered with a stable, single-variant spin cycloid, controllable by an electric field. The spin transport in such a single domain displays a strong anisotropy, arising from the underlying spin cycloid lattice. Our work shows a pathway to understand the fundamental origins of spin transport in such a single domain multiferroic. △ Less

Submitted 6 April, 2024; originally announced April 2024.

Comments: 15 pages, 9 figure

Designed spin-texture-lattice to control anisotropic magnon transport in antiferromagnets

Authors: Peter Meisenheimer, Maya Ramesh, Sajid Husain, Isaac Harris, Hyeon Woo Park, Shiyu Zhou, Hossein Taghinejad, Hongrui Zhang, Lane W. Martin, James Analytis, Paul Stevenson, Jorge Íñiguez-González, Se Kwon Kim, Darrell G. Schlom, Lucas Caretta, Zhi Yao, Ramamoorthy Ramesh

Abstract: Spin waves in magnetic materials are promising information carriers for future computing technologies due to their ultra-low energy dissipation and long coherence length. Antiferromagnets are strong candidate materials due, in part, to their stability to external fields and larger group velocities. Multiferroic aniferromagnets, such as BiFeO$_3$ (BFO), have an additional degree of freedom stemming… ▽ More Spin waves in magnetic materials are promising information carriers for future computing technologies due to their ultra-low energy dissipation and long coherence length. Antiferromagnets are strong candidate materials due, in part, to their stability to external fields and larger group velocities. Multiferroic aniferromagnets, such as BiFeO$_3$ (BFO), have an additional degree of freedom stemming from magnetoelectric coupling, allowing for control of the magnetic structure, and thus spin waves, with electric field. Unfortunately, spin-wave propagation in BFO is not well understood due to the complexity of the magnetic structure. In this work, we explore long-range spin transport within an epitaxially engineered, electrically tunable, one-dimensional (1D) magnonic crystal. We discover a striking anisotropy in the spin transport parallel and perpendicular to the 1D crystal axis. Multiscale theory and simulation suggests that this preferential magnon conduction emerges from a combination of a population imbalance in its dispersion, as well as anisotropic structural scattering. This work provides a pathway to electrically-reconfigurable magnonic crystals in antiferromagnets. △ Less

Submitted 19 February, 2024; originally announced February 2024.

Non-equilibrium pathways to emergent polar supertextures

Authors: Vladimir A. Stoica, Tiannan Yang, Sujit Das, Yue Cao, Huaiyu Wang, Yuya Kubota, Cheng Dai, Hari Padmanabhan, Yusuke Sato, Anudeep Mangu, Quynh L. Nguyen, Zhan Zhang, Disha Talreja, Marc E. Zajac, Donald A. Walko, Anthony D. DiChiara, Shigeki Owada, Kohei Miyanishi, Kenji Tamasaku, Takahiro Sato, James M. Glownia, Vincent Esposito, Silke Nelson, Matthias C. Hoffmann, Richard D. Schaller , et al. (9 additional authors not shown)

Abstract: Ultrafast stimuli can stabilize metastable states of matter inaccessible by equilibrium means. Establishing the spatiotemporal link between ultrafast excitation and metastability is crucial to understanding these phenomena. Here, we use single-shot optical-pump, X-ray-probe measurements to provide snapshots of the emergence of a persistent polar vortex supercrystal in a heterostructure that hosts… ▽ More Ultrafast stimuli can stabilize metastable states of matter inaccessible by equilibrium means. Establishing the spatiotemporal link between ultrafast excitation and metastability is crucial to understanding these phenomena. Here, we use single-shot optical-pump, X-ray-probe measurements to provide snapshots of the emergence of a persistent polar vortex supercrystal in a heterostructure that hosts a fine balance between built-in electrostatic and elastic frustrations by design. By perturbing this balance with photoinduced charges, a starting heterogenous mixture of polar phases disorders within a few picoseconds, resulting in a soup state composed of disordered ferroelectric and suppressed vortex orders. On the pico-to-nanosecond timescales, transient labyrinthine fluctuations form in this soup along with a recovering vortex order. On longer timescales, these fluctuations are progressively quenched by dynamical strain modulations, which drive the collective emergence of a single supercrystal phase. Our results, corroborated by dynamical phase-field modeling, reveal how ultrafast excitation of designer systems generates pathways for persistent metastability. △ Less

Submitted 18 February, 2024; originally announced February 2024.

Electrical control of magnetism by electric field and current-induced torques

Authors: Albert Fert, Ramamoorthy Ramesh, Vincent Garcia, Fèlix Casanova, Manuel Bibes

Abstract: While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferroma… ▽ More While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferromagnet. This discovery drove the development of spin-transfer-torque magnetic random-access memories (STT-MRAMs). More recent research unveiled spin-orbit-torques (SOTs) and will lead to a new generation of devices including SOT-MRAMs. Parallel to these advances, multiferroics and their magnetoelectric coupling experienced a renaissance, leading to novel device concepts for information and communication technology such as the MESO transistor. The story of the electrical control of magnetization is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO, microwave emitters, spin-diodes, skyrmion-based devices, components for neuromorphics, etc). This pas de deux led to major breakthroughs over the last decades (pure spin currents, magnetic skyrmions, spin-charge interconversion, etc). As a result, this field has propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, we cover recent advances in the control of magnetism by electric fields and by current-induced torques. We first review fundamental concepts in these two directions, then discuss their combination, and finally present various families of devices harnessing the electrical control of magnetic properties for various application fields. We conclude by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: Final version accepted for publication in Reviews of Modern Physics

Persistent anisotropy of the spin cycloid in BiFeO3 through ferroelectric switching

Authors: Peter Meisenheimer, Guy Moore, Shiyu Zhou, Hongrui Zhang, Xiaoxi Huang, Sajid Husain, Xianzhe Chen, Lane W. Martin, Kristin A. Persson, Sinéad Griffin, Lucas Caretta, Paul Stevenson, Ramamoorthy Ramesh

Abstract: A key challenge in antiferromagnetic spintronics is the control of spin configuration on nanometer scales applicable to solid-state technologies. Bismuth ferrite (BiFeO3) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic momen… ▽ More A key challenge in antiferromagnetic spintronics is the control of spin configuration on nanometer scales applicable to solid-state technologies. Bismuth ferrite (BiFeO3) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic moments in BiFeO3 are arranged into a spin cycloid, resulting in unique magnetic properties which are tied to the ferroelectric order. Previous understanding of this coupling has relied on average, mesoscale measurements to infer behavior. Using nitrogen vacancy-based diamond magnetometry, we show that the spin cycloid can be deterministically controlled with an electric field. The energy landscape of the cycloid is shaped by both the ferroelectric degree of freedom and strain-induced anisotropy, restricting the magnetization changes to specific ferroelectric switching events. This study provides understanding of the antiferromagnetic texture in BiFeO3 and paves new avenues for designing magnetic textures and spintronic devices. △ Less

Submitted 16 November, 2023; originally announced November 2023.

Comments: 28 pages, 4 main text figures, 8 supp figures

Journal ref: Nature Communications 15, 2903 (2024)

Universal spin wavepacket transport in van der Waals antiferromagnets

Authors: Yue Sun, Fanhao Meng, Changmin Lee, Aljoscha Soll, Hongrui Zhang, Ramamoorthy Ramesh, Jie Yao, Zdenĕk Sofer, Joseph Orenstein

Abstract: Antiferromagnets (AFMs) are promising platforms for the transmission of quantum information via magnons (the quanta of spin waves), offering advantages over ferromagnets with regard to dissipation, speed of response, and immunity to external fields. Recently, it was shown that in the insulating van der Waals (vdW) semiconductor, CrSBr, strong spin-exciton coupling enables readout of magnon density… ▽ More Antiferromagnets (AFMs) are promising platforms for the transmission of quantum information via magnons (the quanta of spin waves), offering advantages over ferromagnets with regard to dissipation, speed of response, and immunity to external fields. Recently, it was shown that in the insulating van der Waals (vdW) semiconductor, CrSBr, strong spin-exciton coupling enables readout of magnon density and propagation using photons of visible light. This exciting observation came with a puzzle: photogenerated magnons were observed to propagate 10$^3$ times faster than the velocity inferred from neutron scattering, leading to a conjecture that spin wavepackets are carried along by coupling to much faster elastic modes. Here we show, through a combination of theory and experiment, that the propagation mechanism is, instead, coupling within the magnetic degrees of freedom through long range dipole-dipole coupling. This mechanism is an inevitable consequence of Maxwell's equations, and as such, will dominate the propagation of spin at long wavelengths in the entire class of vdW magnets currently under intense investigation. Moreover, identifying the mechanism of spin propagation provides a set of optimization rules, as well as caveats, that are essential for any future applications of these promising systems. △ Less

Submitted 6 September, 2023; originally announced September 2023.

Comments: 19 pages, 5 figures. arXiv admin note: text overlap with arXiv:2212.03261

The 4D Camera: an 87 kHz direct electron detector for scanning/transmission electron microscopy

Authors: Peter Ercius, Ian J. Johnson, Philipp Pelz, Benjamin H. Savitzky, Lauren Hughes, Hamish G. Brown, Steven E. Zeltmann, Shang-Lin Hsu, Cassio C. S. Pedroso, Bruce E. Cohen, Ramamoorthy Ramesh, David Paul, John M. Joseph, Thorsten Stezelberger, Cory Czarnik, Matthew Lent, Erin Fong, Jim Ciston, Mary C. Scott, Colin Ophus, Andrew M. Minor, and Peter Denes

Abstract: We describe the development, operation, and application of the 4D Camera -- a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at approximately 480 Gbit/s which is captured by dedicated receiver computers with a parallelized software infrastructure that has been implemented to process the resulting 10 - 700… ▽ More We describe the development, operation, and application of the 4D Camera -- a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at approximately 480 Gbit/s which is captured by dedicated receiver computers with a parallelized software infrastructure that has been implemented to process the resulting 10 - 700 Gigabyte-sized raw datasets. The back illuminated detector provides the ability to detect single electron events at accelerating voltages from 30 - 300 keV. Through electron counting, the resulting sparse data sets are reduced in size by 10 - 300x compared to the raw data, and open-source sparsity-based processing algorithms offer rapid data analysis. The high frame rate allows for large and complex 4D-STEM experiments to be accomplished with typical STEM scanning parameters. △ Less

Submitted 19 May, 2023; originally announced May 2023.

The Training Process of Many Deep Networks Explores the Same Low-Dimensional Manifold

Authors: Jialin Mao, Itay Griniasty, Han Kheng Teoh, Rahul Ramesh, Rubing Yang, Mark K. Transtrum, James P. Sethna, Pratik Chaudhari

Abstract: We develop information-geometric techniques to analyze the trajectories of the predictions of deep networks during training. By examining the underlying high-dimensional probabilistic models, we reveal that the training process explores an effectively low-dimensional manifold. Networks with a wide range of architectures, sizes, trained using different optimization methods, regularization technique… ▽ More We develop information-geometric techniques to analyze the trajectories of the predictions of deep networks during training. By examining the underlying high-dimensional probabilistic models, we reveal that the training process explores an effectively low-dimensional manifold. Networks with a wide range of architectures, sizes, trained using different optimization methods, regularization techniques, data augmentation techniques, and weight initializations lie on the same manifold in the prediction space. We study the details of this manifold to find that networks with different architectures follow distinguishable trajectories but other factors have a minimal influence; larger networks train along a similar manifold as that of smaller networks, just faster; and networks initialized at very different parts of the prediction space converge to the solution along a similar manifold. △ Less

Submitted 19 March, 2024; v1 submitted 2 May, 2023; originally announced May 2023.

Journal ref: Proceedings of the National Academy of Sciences 121.12 (2024)

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Authors: Diogo C. Vaz, Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young, Fèlix Casanova

Abstract: With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel… ▽ More With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Comments: 17 pages, 5 figures

Uncovering polar vortex structures by inversion of multiple scattering with a stacked Bloch wave model

Authors: Steven E Zeltmann, Shang-Lin Hsu, Hamish G Brown, Sandhya Susarla, Ramamoorthy Ramesh, Andrew M Minor, Colin Ophus

Abstract: Nanobeam electron diffraction can probe local structural properties of complex crystalline materials including phase, orientation, tilt, strain, and polarization. Ideally, each diffraction pattern from a projected area of a few unit cells would produce clear a Bragg diffraction pattern, where the reciprocal lattice vectors can be measured from the spacing of the diffracted spots, and the spot inte… ▽ More Nanobeam electron diffraction can probe local structural properties of complex crystalline materials including phase, orientation, tilt, strain, and polarization. Ideally, each diffraction pattern from a projected area of a few unit cells would produce clear a Bragg diffraction pattern, where the reciprocal lattice vectors can be measured from the spacing of the diffracted spots, and the spot intensities are equal to the square of the structure factor amplitudes. However, many samples are too thick for this simple interpretation of their diffraction patterns, as multiple scattering of the electron beam can produce a highly nonlinear relationship between the spot intensities and the underlying structure. Here, we develop a stacked Bloch wave method to model the diffracted intensities from thick samples with structure that varies along the electron beam. Our method reduces the large parameter space of electron scattering to just a few structural variables per probe position, making it fast enough to apply to very large fields of view. We apply our method to SrTiO$_3$/PbTiO$_3$/SrTiO$_3$ multilayer samples, and successfully disentangle specimen tilt from the mean polarization of the PbTiO$_3$ layers. We elucidate the structure of complex vortex topologies in the PbTiO$_3$ layers, demonstrating the promise of our method to extract material properties from thick samples. △ Less

Submitted 10 April, 2023; v1 submitted 10 November, 2022; originally announced November 2022.

Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale

Authors: Joel Martis, Sandhya Susarla, Archith Rayabharam, Cong Su, Timothy Paule, Philipp Pelz, Cassandra Huff, Xintong Xu, Hao-Kun Li, Marc Jaikissoon, Victoria Chen, Eric Pop, Krishna Saraswat, Alex Zettl, Narayana R. Aluru, Ramamoorthy Ramesh, Peter Ercius, Arun Majumdar

Abstract: Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously… ▽ More Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the electron charge density in monolayer MoS2. We find that both the core electrons and the valence electrons contribute to the derived electron charge density. However, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D STEM. △ Less

Submitted 31 July, 2023; v1 submitted 17 October, 2022; originally announced October 2022.

Journal ref: Nature Communications 14(1) (2023) 1-8

Controlled Ordering of Room-Temperature Magnetic Skyrmions in a Polar Van der Waals Magnet

Authors: Peter Meisenheimer, Hongrui Zhang, David Raftrey, Xiang Chen, Ying-Ting Chan, Rui Chen, Reed Yalisove, Mary C. Scott, Jie Yao, Weida Wu, Peter Fischer, Robert J. Birgeneau, Ramamoorthy Ramesh

Abstract: Control and understanding of ensembles of skyrmions is important for realization of future technologies. In particular, the order-disorder transition associated with the 2D lattice of magnetic skyrmions can have significant implications for transport and other dynamic functionalities. To date, skyrmion ensembles have been primarily studied in bulk crystals, or as isolated skyrmions in thin film de… ▽ More Control and understanding of ensembles of skyrmions is important for realization of future technologies. In particular, the order-disorder transition associated with the 2D lattice of magnetic skyrmions can have significant implications for transport and other dynamic functionalities. To date, skyrmion ensembles have been primarily studied in bulk crystals, or as isolated skyrmions in thin film devices. Here, we investigate the condensation of the skyrmion phase at room temperature and zero field in a polar, Van der Waals magnet. We demonstrate that we can engineer an ordered skyrmion crystal through structural confinement on the $μ$m scale, showing control over this order-disorder transition on scales relevant for device applications. △ Less

Submitted 5 October, 2022; originally announced October 2022.

Comments: 26 pages; 5 main text, 8 supplementary figures

Journal ref: Nat.Commun. 14, 3744 (2023)

Thermal cycling induced alteration of the stacking order and spin-flip in the room temperature van der Waals magnet Fe$_5$GeTe$_2$

Authors: Xiang Chen, Wei Tian, Yu He, Hongrui Zhang, Tyler L. Werner, Saul Lapidus, Jacob P. C. Ruff, Ramamoorthy Ramesh, Robert J. Birgeneau

Abstract: The magnetic properties of the quasi-two-dimensional van der Waals magnet Fe$_{5-δ}$GeTe$_2$ (F5GT), which has a high ferromagnetic ordering temperature $T_{\text{C}}$ $\sim$ 315 K, remains to be better understood. It has been demonstrated that the magnetization of F5GT is sensitive to both the Fe deficiency $δ$ and the thermal cycling history. Here, we investigate the structural and magnetic prop… ▽ More The magnetic properties of the quasi-two-dimensional van der Waals magnet Fe$_{5-δ}$GeTe$_2$ (F5GT), which has a high ferromagnetic ordering temperature $T_{\text{C}}$ $\sim$ 315 K, remains to be better understood. It has been demonstrated that the magnetization of F5GT is sensitive to both the Fe deficiency $δ$ and the thermal cycling history. Here, we investigate the structural and magnetic properties of F5GT with a minimal Fe deficiency ($|δ|$ $\le$ 0.1), utilizing combined x-ray and neutron scattering techniques. Our study reveals that the quenched F5GT single crystals experience an irreversible, first-order transition at $T_{\text{S}}$ $\sim$ 110 K upon first cooling, where the stacking order partly or entirely converts from ABC-stacking to AA-stacking order. Importantly, the magnetic properties, including the magnetic moment direction and the enhanced $T_{\text{C}}$ after the thermal cycling, are intimately related to the alteration of the stacking order. Our work highlights the significant influence of the lattice symmetry to the magnetism in F5GT. △ Less

Submitted 9 September, 2022; originally announced September 2022.

Comments: 7 pages with 5 figures. Comments are welcome

Journal ref: Phys. Rev. Mater. 7.044411 (2023)

Antiferromagnetic order in Co-doped Fe$_5$GeTe$_2$ probed by resonant magnetic x-ray scattering

Authors: Xiang Chen, Enrico Schierle, Yu He, Mayia Vranas, John William Freeland, Jessica. L. McChesney, Ramamoorthy Ramesh, Robert J. Birgeneau, Alex Frano

Abstract: The quasi-two-dimensional van der Waals magnet Fe$_{5-δ}$GeTe$_2$ has emerged as a promising platform for electronic and spintronic functionalities at room temperature, owing to its large ferromagnetic ordering temperature $T_{\text{C}}$ $\sim$ 315 K. Interestingly, by cobalt (Co) substitution of iron in F5GT, $i.e.$ $({\text{Fe}}_{1-x}{\text{Co}}_x)_{5-δ}{\text{GeTe}}_2$ (Co-F5GT), not only can i… ▽ More The quasi-two-dimensional van der Waals magnet Fe$_{5-δ}$GeTe$_2$ has emerged as a promising platform for electronic and spintronic functionalities at room temperature, owing to its large ferromagnetic ordering temperature $T_{\text{C}}$ $\sim$ 315 K. Interestingly, by cobalt (Co) substitution of iron in F5GT, $i.e.$ $({\text{Fe}}_{1-x}{\text{Co}}_x)_{5-δ}{\text{GeTe}}_2$ (Co-F5GT), not only can its magnetic transition temperature be further enhanced, but the magnetic and structural ground states can also be tuned. Specifically, an antiferromagnetic (AFM) order is induced beyond the Co do** level $x \ge 0.4$. Here, we investigate the magnetic properties of a Co-F5GT single crystal at $x = 0.45(1)$, by utilizing the element specific, resonant magnetic x-ray scattering technique. Our study reveals an A-type, Ising-like AFM ground state, with a transition temperature $T_{\text{N}}$ $\sim$ 340 K. In addition, our work unveils an important contribution from Co magnetic moments to the magnetic order. The application of the in-plane magnetic fields gradually polarize the spin moments along the field direction, but without inducing incommensurate spin texture(s). △ Less

Submitted 28 July, 2022; originally announced July 2022.

Comments: 7 pages with 5 figures. Submitted on June/2022

Journal ref: Physical Review MATERIALS 6, 094404 (2022)

Hyperspectral imaging of excitons within a moiré unit-cell with a sub-nanometer electron probe

Authors: Sandhya Susarla, Mit H. Naik, Daria D. Blach, Jonas Zipfel, Takashi Taniguchi, Kenji Watanabe, Libai Huang, Ramamoorthy Ramesh, Felipe H. da Jornada, Steven G. Louie, Peter Ercius, Archana Raja

Abstract: Electronic and optical excitations in two-dimensional moiré systems are uniquely sensitive to local atomic registries, leading to materials- and twist-angle specific correlated electronic ground states with varied degree of localization. However, there has been no direct experimental correlation between the sub-nanometer structure and emergent excitonic transitions, comprising tightly-bound pairs… ▽ More Electronic and optical excitations in two-dimensional moiré systems are uniquely sensitive to local atomic registries, leading to materials- and twist-angle specific correlated electronic ground states with varied degree of localization. However, there has been no direct experimental correlation between the sub-nanometer structure and emergent excitonic transitions, comprising tightly-bound pairs of photoexcited electrons and holes. Here, we use cryogenic transmission electron microscopy and spectroscopy to simultaneously image the structural reconstruction and associated localization of the lowest-energy intralayer exciton in a rotationally aligned heterostructure of WS2 and WSe2 monolayers. In conjunction with optical spectroscopy and ab initio calculations, we determine that the exciton center-of-mass wavefunction is strongly modulated in space, confined to a radius of ~ 2 nm around the highest-energy stacking site in the moiré unit-cell, forming a triangular lattice. Our results provide direct evidence that atomic reconstructions lead to the strongly confining moiré potentials and that engineering strain at the nanoscale will enable new types of excitonic lattices. △ Less

Submitted 27 July, 2022; originally announced July 2022.

Comments: 11 pages 3 figures

Journal ref: Science 378(6625) (2022) 1235-1239

Nonvolatile Electric Field Control of Thermal Magnons in the Absence of an Applied Magnetic Field

Authors: Eric Parsonnet, Lucas Caretta, Vikram Nagarajan, Hongrui Zhang, Hossein Taghinejad, Piush Behera, Xiaoxi Huang, Pravin Kavle, Abel Fernandez, Dmitri Nikonov, Hai Li, Ian Young, James Analytis, Ramamoorthy Ramesh

Abstract: Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong magnetic field to allow for deterministic control of magnetic order. Here, we make use of the well-known multiferroic magnetoelectric, BiFeO3, to demon… ▽ More Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong magnetic field to allow for deterministic control of magnetic order. Here, we make use of the well-known multiferroic magnetoelectric, BiFeO3, to demonstrate non-volatile, hysteretic, electric-field control of thermally excited magnon current in the absence of an applied magnetic field. These findings are an important step toward magnon-based devices, where electric-field-only control is highly desirable. △ Less

Submitted 23 August, 2022; v1 submitted 30 March, 2022; originally announced March 2022.

Comments: 34 pages, 4 figures, 9 supplemental figures

Journal ref: Phys. Rev. Lett. 129, 087601 (2022)

Pervasive beyond room-temperature ferromagnetism in a doped van der Waals magnet: Ni doped Fe$_5$GeTe$_2$ with $T_{\text{C}}$ up to 478 K

Authors: Xiang Chen, Yu-Tsun Shao, Rui Chen, Sandhya Susarla, Tom Hogan, Yu He, Hongrui Zhang, Siqi Wang, Jie Yao, Peter Ercius, David A. Muller, Ramamoorthy Ramesh, Robert J. Birgeneau

Abstract: The existence of long range magnetic order in low dimensional magnetic systems, such as the quasi-two-dimensional (2D) van der Waals (vdW) magnets, has attracted intensive studies of new physical phenomena. The vdW Fe$_N$GeTe$_2$ ($N$ = 3, 4, 5; FGT) family is exceptional owing to its vast tunability of magnetic properties. Particularly, a ferromagnetic ordering temperature ($T_{\text{C}}$) above… ▽ More The existence of long range magnetic order in low dimensional magnetic systems, such as the quasi-two-dimensional (2D) van der Waals (vdW) magnets, has attracted intensive studies of new physical phenomena. The vdW Fe$_N$GeTe$_2$ ($N$ = 3, 4, 5; FGT) family is exceptional owing to its vast tunability of magnetic properties. Particularly, a ferromagnetic ordering temperature ($T_{\text{C}}$) above room temperature at $N$ = 5 (F5GT) is observed. Here, our study shows that, by nickel (Ni) substitution of iron (Fe) in F5GT, a record high $T_{\text{C}}$ = 478(6) K is achieved. Importantly, pervasive, beyond-room-temperature ferromagnetism exists in almost the entire do** range of the phase diagram of Ni-F5GT. We argue that this striking observation in Ni-F5GT can be possibly due to several contributing factors, in which the structural alteration enhanced 3D magnetic couplings might be critical for enhancing the ferromagnetic order. △ Less

Submitted 26 May, 2022; v1 submitted 28 February, 2022; originally announced March 2022.

Comments: Submitted on 06-Dec-2021; Now online

Nonvolatile Electric-Field Control of Inversion Symmetry

Authors: Lucas Caretta, Yu-Tsun Shao, Jia Yu, Antonio B. Mei, Bastien F. Grosso, Cheng Dai, Piush Behera, Daehun Lee, Margaret McCarter, Eric Parsonnet, Harikrishnan K. P., Fei Xue, Ed Barnard, Steffen Ganschow, Archana Raja, Lane W. Martin, Long-Qing Chen, Manfred Fiebig, Keji Lai, Nicola A. Spaldin, David A. Muller, Darrell G. Schlom, Ramamoorthy Ramesh

Abstract: In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers con… ▽ More In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Comments: L Caretta and Y-T Shao contributed equally. 64 pages, 4 figures, 25 supplemental figures, 1 supplemental table

Noise Electrometry of Polar and Dielectric Materials

Authors: Rahul Sahay, Satcher Hsieh, Eric Parsonnet, Lane W. Martin, Ramamoorthy Ramesh, Norman Y. Yao, Shubhayu Chatterjee

Abstract: A qubit sensor with an electric dipole moment acquires an additional contribution to its depolarization rate when it is placed in the vicinity of a polar or dielectric material as a consequence of electrical noise arising from polarization fluctuations in the material. Here, we characterize this relaxation rate as a function of experimentally tunable parameters such as sample-probe distance, probe… ▽ More A qubit sensor with an electric dipole moment acquires an additional contribution to its depolarization rate when it is placed in the vicinity of a polar or dielectric material as a consequence of electrical noise arising from polarization fluctuations in the material. Here, we characterize this relaxation rate as a function of experimentally tunable parameters such as sample-probe distance, probe-frequency, and temperature, and demonstrate that it offers a window into dielectric properties of insulating materials over a wide range of frequencies and length scales. We discuss the experimental feasibility of our proposal and illustrate its ability to probe a variety of phenomena, ranging from collective polar excitations to phase transitions and disorder-dominated physics in relaxor ferroelectrics. Our proposal paves the way for a novel table-top probe of polar and dielectric materials in a parameter regime complementary to existing tools and techniques. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 5 + 2 + 15 pages; 2 figures

Erbium-Implanted Materials for Quantum Communication Applications

Authors: Paul Stevenson, Christopher M Phenicie, Isaiah Gray, Sebastian P Horvath, Sacha Welinski, Austin M Ferrenti, Alban Ferrier, Philippe Goldner, Sujit Das, Ramamoorthy Ramesh, Robert J Cava, Nathalie P de Leon, Jeff D Thompson

Abstract: Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion im… ▽ More Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via do** during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing. △ Less

Submitted 10 October, 2021; originally announced October 2021.

Order-disorder transitions in a polar vortex lattice

Authors: Linming Zhou, Cheng Dai, Peter Meisenheimer, Sujit Das, Yongjun Wu, Fernando Gómez-Ortiz, Pablo García-Fernández, Yuhui Huang, Javier Junquera, Long-Qing Chen, Ramamoorthy Ramesh, Zijian Hong

Abstract: Order-disorder transitions are widely explored in various vortex structures in condensed matter physics, i.e., in the type-II superconductors and Bose-Einstein condensates. In this study, we have investigated the ordering of the polar vortex phase in the (PZT)n/(STO)n superlattice systems through phase-field simulations. An antiorder state is discovered for short periodicity superlattice on an SSO… ▽ More Order-disorder transitions are widely explored in various vortex structures in condensed matter physics, i.e., in the type-II superconductors and Bose-Einstein condensates. In this study, we have investigated the ordering of the polar vortex phase in the (PZT)n/(STO)n superlattice systems through phase-field simulations. An antiorder state is discovered for short periodicity superlattice on an SSO substrate, owing to the huge interfacial coupling between PZT and STO as well as the giant in-plane polarization in STO layers due to the large tensile strain. Increasing the periodicity leads to the anti-order to disorder transition, resulting from the loss of interfacial coupling and disappearance of the polarization in STO layers. On the other hand, for short periodicity superlattices, order-disorder-antiorder transition can be engineered by mediating the substrate strain, due to the delicate competition between the depoling effect, interfacial coupling, and strain effect. We envision this study to spur further interest towards the understanding of order-disorder transition in ferroelectric topological structures. △ Less

Submitted 2 November, 2021; v1 submitted 14 August, 2021; originally announced August 2021.

Comments: 20 Pages 5 figures

Journal ref: Adv. Funct. Mater. 2022, 2111392

A room temperature polar ferromagnetic metal

Authors: Hongrui Zhang, Yu-Tsun Shao, Rui Chen, Xiang Chen, Sandhya Susarla, Jonathan T. Reichanadter, Lucas Caretta, Xiaoxi Huang, Nicholas S. Settineri, Zhen Chen, **gcheng Zhou, Edith Bourret-Courchesne, Peter Ercius, Jie Yao, Jeffrey B. Neaton, David A. Muller, Robert J. Birgeneau, Ramamoorthy Ramesh

Abstract: The advent of long-range magnetic order in non-centrosymmetric compounds has stimulated interest in the possibility of exotic spin transport phenomena and topologically protected spin textures for applications in next-generation spintronics. This work reports a novel wurtzite-structure polar magnetic metal, identified as AA'-stacked (Fe0.5Co0.5)5-xGeTe2, which exhibits a Neel-type skyrmion lattice… ▽ More The advent of long-range magnetic order in non-centrosymmetric compounds has stimulated interest in the possibility of exotic spin transport phenomena and topologically protected spin textures for applications in next-generation spintronics. This work reports a novel wurtzite-structure polar magnetic metal, identified as AA'-stacked (Fe0.5Co0.5)5-xGeTe2, which exhibits a Neel-type skyrmion lattice as well as a Rashba-Edelstein effect at room temperature. Atomic resolution imaging of the structure reveals a structural transition as a function of Co-substitution, leading to the polar phase at 50% Co. This discovery reveals an unprecedented layered polar magnetic system for investigating intriguing spin topologies and ushers in a promising new framework for spintronics. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Electric Field Control of Chirality

Authors: Piush Behera, Molly A. May, Fernando Gómez-Ortiz, Sandhya Susarla, Sujit Das, Christopher T. Nelson, Lucas Caretta, Shang-Lin Hsu, Margaret R. McCarter, Benjamin H. Savitzky, Edward S. Barnard, Archana Raja, Zijian Hong, Pablo García-Fernandez, Stephen W. Lovesey, Gerrit van der Laan, Colin Ophus, Lane W. Martin, Javier Junquera, Markus B. Raschke, Ramamoorthy Ramesh

Abstract: Polar textures have attracted significant attention in recent years as a promising analog to spin-based textures in ferromagnets. Here, using optical second harmonic generation based circular dichroism, we demonstrate deterministic and reversible control of chirality over mesoscale regions in ferroelectric vortices using an applied electric field. The microscopic origins of the chirality, the path… ▽ More Polar textures have attracted significant attention in recent years as a promising analog to spin-based textures in ferromagnets. Here, using optical second harmonic generation based circular dichroism, we demonstrate deterministic and reversible control of chirality over mesoscale regions in ferroelectric vortices using an applied electric field. The microscopic origins of the chirality, the pathway during the switching, and the mechanism for electric-field control are described theoretically via phase-field modeling and second-principles simulations, and experimentally by examination of the microscopic response of the vortices under an applied field. The emergence of chirality from the combination of non-chiral materials and subsequent control of the handedness with an electric field has far-reaching implications for new electronics based on chirality as a field controllable order parameter. △ Less

Submitted 28 May, 2021; originally announced May 2021.

Comments: 19 pages, 4 figures Supplement: 27 pages, 13 figures

Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices

Authors: Eric R. Hoglund, De-Liang Bao, Andrew O'Hara, Sara Makarem, Zachary T. Piontkowski, Joseph R. Matson, Ajay K. Yadav, Ryan C. Haisimaier, Roman Engel-Herbert, Jon F. Ihlefeld, Jayakanth Ravichandran, Ramamoorthy Ramesh, Joshua D. Caldwell, Thomas E. Beechem, John A. Tomko, Jordan A. Hachtel, Sokrates T. Pantelides, Patrick E. Hopkins, James M. Howe

Abstract: As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity… ▽ More As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses. △ Less

Submitted 4 October, 2021; v1 submitted 20 May, 2021; originally announced May 2021.

Comments: 38 pages, 3 figures, 10 supplemental figures

Journal ref: Nature 601, 556 (2022)

Local Manipulation of Polar Skyrmions and Topological Phase Transitions

Authors: Linming Zhou, Yongjun Wu, Sujit Das, Yunlong Tang, Cheng Li, Yuhui Huang, He Tian, Long-Qing Chen, Ramamoorthy Ramesh, Zijian Hong

Abstract: Topological phases such as polar skyrmions have been a fertile playground for ferroelectric oxide superlattices, with exotic physical phenomena such as negative capacitance. Herein, using phase-field simulations, we demonstrate the local control of the skyrmion phase with electric potential applied through a top electrode. Under a relatively small electric potential, the skyrmions underneath the e… ▽ More Topological phases such as polar skyrmions have been a fertile playground for ferroelectric oxide superlattices, with exotic physical phenomena such as negative capacitance. Herein, using phase-field simulations, we demonstrate the local control of the skyrmion phase with electric potential applied through a top electrode. Under a relatively small electric potential, the skyrmions underneath the electrode can be erased and recovered reversibly. A topologically protected transition from the symmetric to asymmetric skyrmion bubbles is observed at the edge of the electrode. While a topological transition to a labyrinthine domain requires a high applied potential, it can switch back to the skyrmion state with a relatively small electric potential. The topological transition from +1 to 0 occurs before the full destruction of the bubble state. It is shown that the shrinking and bursting of the skyrmions leads to a large reduction in the dielectric permittivity, the magnitude of which depends on the size of the electrode. △ Less

Submitted 6 August, 2021; v1 submitted 27 April, 2021; originally announced April 2021.

Comments: 17 Pages 4 figures

Journal ref: Matter, 5(3), 1031-1041 (2022)

Semiconductor-based selective emitter with sharp cutoff for thermophotovoltaic energy conversion

Authors: Qing Ni, Rajagopalan Ramesh, Cheng-An Chen, Li** Wang

Abstract: Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without do**. A germanium wafer based selective emitter with front-side antireflection and backside metal coating is studied here for thermophotovoltaic (TPV) energy conversion. Optical simulation predicts the spectral emittance above 0.9 in the waveleng… ▽ More Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without do**. A germanium wafer based selective emitter with front-side antireflection and backside metal coating is studied here for thermophotovoltaic (TPV) energy conversion. Optical simulation predicts the spectral emittance above 0.9 in the wavelengths from 1 to 1.85 um and below 0.2 in the sub-bandgap range with sharp cutoff around the bandgap, indicating superior spectral selectivity behavior. This is confirmed by excellent agreement with indirectly measured spectral emittance of the fabricated Ge-based selective emitter sample. Furthermore, the TPV efficiency by paring the Ge-based selective emitter with a GaSb cell is theoretically analyzed at different temperatures. This work will facilitate the development of the semiconductor-based selective emitters for enhancing TPV performance. △ Less

Submitted 24 April, 2021; originally announced April 2021.

Subterahertz collective dynamics of polar vortices

Authors: Qian Li, Vladimir A. Stoica, Marek Paściak, Yi Zhu, Yakun Yuan, Tiannan Yang, Margaret R. McCarter, Sujit Das, Ajay K. Yadav, Suji Park, Cheng Dai, Hyeon Jun Lee, Youngjun Ahn, Samuel D. Marks, Shukai Yu, Christelle Kadlec, Takahiro Sato, Matthias C. Hoffmann, Matthieu Chollet, Michael E. Kozina, Silke Nelson, Diling Zhu, Donald A. Walko, Aaron M. Lindenberg, Paul G. Evans , et al. (7 additional authors not shown)

Abstract: The collective dynamics of topological structures have been of great interest from both fundamental and applied perspectives. For example, the studies of dynamical properties of magnetic vortices and skyrmions not only deepened the understanding of many-body physics but also led to potential applications in data processing and storage. Topological structures constructed from electrical polarizatio… ▽ More The collective dynamics of topological structures have been of great interest from both fundamental and applied perspectives. For example, the studies of dynamical properties of magnetic vortices and skyrmions not only deepened the understanding of many-body physics but also led to potential applications in data processing and storage. Topological structures constructed from electrical polarization rather than spin have recently been realized in ferroelectric superlattices, promising for ultrafast electric-field control of topological orders. However, little is known about the dynamics of such complex extended nanostructures which in turn underlies their functionalities. Using terahertz-field excitation and femtosecond x-ray diffraction measurements, we observe ultrafast collective polarization dynamics that are unique to polar vortices, with orders of magnitude higher frequencies and smaller lateral size than those of experimentally realized magnetic vortices. A previously unseen soft mode, hereafter referred to as a vortexon, emerges as transient arrays of nanoscale circular patterns of atomic displacements, which reverse their vorticity on picosecond time scales. Its frequency is significantly reduced at a critical strain, indicating a condensation of structural dynamics. First-principles-based atomistic calculations and phase-field modeling reveal the microscopic atomic arrangements and frequencies of the vortex modes. The discovery of subterahertz collective dynamics in polar vortices opens up opportunities for applications of electric-field driven data processing in topological structures with ultrahigh speed and density. △ Less

Submitted 10 February, 2021; originally announced February 2021.

Emergent chirality in a polar meron to skyrmion phase transition

Authors: Yu-Tsun Shao, Sujit Das, Zijian Hong, Ruijuan Xu, Swathi Chandrika, Fernando Gómez-Ortiz, Pablo García-Fernández, Long-Qing Chen, Harold Y. Hwang, Javier Junquera, Lane W. Martin, Ramamoorthy Ramesh, David A. Muller

Abstract: Polar skyrmions are predicted to emerge from the interplay of elastic, electrostatic and gradient energies, in contrast to the key role of the anti-symmetric Dzyalozhinskii-Moriya interaction in magnetic skyrmions. With the discovery of topologically-stable polar skyrmions, it is of both fundamental and practical interest to understand the microscopic nature and the possibility of temperature- and… ▽ More Polar skyrmions are predicted to emerge from the interplay of elastic, electrostatic and gradient energies, in contrast to the key role of the anti-symmetric Dzyalozhinskii-Moriya interaction in magnetic skyrmions. With the discovery of topologically-stable polar skyrmions, it is of both fundamental and practical interest to understand the microscopic nature and the possibility of temperature- and strain-driven phase transitions in ensembles of such polar skyrmions. Here, we explore the reversible transition from a skyrmion state (topological charge of -1) to a two-dimensional, tetratic lattice of merons (with topological charge of -1/2) upon varying the temperature and elastic boundary conditions in [(PbTiO3)16/(SrTiO3)16]8 lifted-off membranes. This topological phase transition is accompanied by a change in chirality, from zero-net chirality (in meronic phase) to net-handedness (in skyrmionic phase). To map these changes microscopically required develo** new imaging methods. We show how scanning convergent beam electron diffraction provides a robust measure of the local polarization simultaneously with the strain state at sub-nm resolution, while also directly map** the chirality of each skyrmion. Using this, we demonstrate strain as a crucial order parameter to drive isotropic-to-anisotropic structural transitions of chiral polar skyrmions to non-chiral merons, validated with X-ray reciprocal space map** and theoretical phase-field simulations. These results revealed by our new measurement methods provide the first illustration of systematic control of rich variety of topological dipole textures by altering the mechanical boundary conditions, which may offer a promising way to control their functionalities in ferroelectric nanodevices using the local and spatial distribution of chirality and order. △ Less

Submitted 2 January, 2023; v1 submitted 12 January, 2021; originally announced January 2021.

Comments: 39 pages, 5 figures, 14 supporting figures

Transferring Orbital Angular Momentum to an Electron Beam Reveals Toroidal and Chiral Order

Authors: Kayla X. Nguyen, Yi Jiang, Michael C. Cao, Prafull Purohit, Ajay K. Yadav, Pablo García-Fernández, Mark W. Tate, Celesta S. Chang, Pablo Aguado-Puente, Jorge Íñiguez, Fernando Gomez-Ortiz, Sol M. Gruner, Javier Junquera, Lane W. Martin, Ramamoorthy Ramesh, D. A. Muller

Abstract: Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not coupl… ▽ More Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not couple directly to linear external fields. To develop a mechanism that can control switching in polarization vortices, we utilize a high-energy electron beam and show that transverse currents are generated by polar order in the ballistic limit. We find that the presence of an electric toroidal moment in a ferro-rotational phase transfers a measurable torque and orbital angular momentum to the electron beam. Furthermore, we find that the complex polarization patterns, observed in these heterostructures, are microscopically chiral with a non-trivial axial component of the polarization. This chirality opens the door for the coupling of ferroelectric and optical properties. △ Less

Submitted 9 December, 2020; v1 submitted 7 December, 2020; originally announced December 2020.

A single-projection three-dimensional reconstruction algorithm for scanning transmission electron microscopy data

Authors: Hamish G. Brown, Philipp M. Pelz, Shang-Lin Hsu, Zimeng Zhang, Ramamoorthy Ramesh, Katherine Inzani, Evan Sheridan, Sinéad M. Griffin, Marcel Schloz, Thomas C. Pekin, Christoph T. Koch, Scott D. Findlay, Leslie J. Allen, Mary C. Scott, Colin Ophus, Jim Ciston

Abstract: Increasing interest in three-dimensional nanostructures adds impetus to electron microscopy techniques capable of imaging at or below the nanoscale in three dimensions. We present a reconstruction algorithm that takes as input a focal series of four-dimensional scanning transmission electron microscopy (4D-STEM) data. We apply the approach to a lead iridate, Pb$_2$Ir$_2$O$_7$, and yttrium-stabiliz… ▽ More Increasing interest in three-dimensional nanostructures adds impetus to electron microscopy techniques capable of imaging at or below the nanoscale in three dimensions. We present a reconstruction algorithm that takes as input a focal series of four-dimensional scanning transmission electron microscopy (4D-STEM) data. We apply the approach to a lead iridate, Pb$_2$Ir$_2$O$_7$, and yttrium-stabilized zirconia,Y$_{0.095}$Zr$_{0.905}$O$_2$ , heterostructure from data acquired with the specimen in a single plan-view orientation, with the epitaxial layers stacked along the beam direction. We demonstrate that Pb-Ir atomic columns are visible in the uppermost layers of the reconstructed volume. We compare this approach to the alternative techniques of depth sectioning using differential phase contrast scanning transmission electron microscopy (DPC-STEM) and multislice ptychographic reconstruction. △ Less

Submitted 16 February, 2022; v1 submitted 15 November, 2020; originally announced November 2020.

Comments: 27 pages, 6 figures in main manuscript. 6 pages, 5 figures in supplementary. All computer code for electron microscopy simulation and reconstruction included in directory anc. Submitted to Microscopy & Microanalysis

Unified Framework for Charge-Spin Interconversion in Spin-Orbit Materials

Authors: Shehrin Sayed, Seokmin Hong, Xiaoxi Huang, Lucas Caretta, Arnoud S. Everhardt, Ramamoorthy Ramesh, Sayeef Salahuddin, Supriyo Datta

Abstract: Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied, including topological insulators, transition metals, Kondo insulators, semimetals, semiconductors, and oxides; however, there is no unifying physical framework for… ▽ More Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied, including topological insulators, transition metals, Kondo insulators, semimetals, semiconductors, and oxides; however, there is no unifying physical framework for understanding the physics and therefore designing a material system and devices with the desired properties. We present a model that binds together the experimental data observed on the wide variety of materials in a unified manner. We show that in a material with a given spin-momentum locking, the density of states plays a crucial role in determining the charge-spin interconversion efficiency, and a simple inverse relationship can be obtained. Remarkably, experimental data obtained over the last decade on many different materials closely follow such an inverse relationship. We further deduce two figure-of-merits of great current interest: the spin-orbit torque (SOT) efficiency (for the direct effect) and the inverse Rashba-Edelstein effect length (for the inverse effect), which statistically show good agreement with the existing experimental data on wide varieties of materials. Especially, we identify a scaling law for the SOT efficiency with respect to the carrier concentration in the sample, which agrees with existing data. Such an agreement is intriguing since our transport model includes only Fermi surface contributions and fundamentally different from the conventional views of the SOT efficiency that includes contributions from all the occupied states. △ Less

Submitted 30 April, 2021; v1 submitted 4 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Applied 15, 054004 (2021)

Antiferromagnetic Switching Driven by the Collective Dynamics of a Coexisting Spin Glass

Authors: Eran Maniv, Nityan Nair, Shannon C. Haley, Spencer Doyle, Caolan John, Stefano Cabrini, Ariel Maniv, Sanath K. Ramakrishna, Yun-Long Tang, Peter Ercius, Ramamoorthy Ramesh, Yaroslav Tserkovnyak, Arneil P. Reyes, James G. Analytis

Abstract: The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bere… ▽ More The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. In this study, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe$_{1/3+δ}$NbS$_2$, which is rooted in the electrically-stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. The use of a spin glass' collective dynamics to electrically manipulate antiferromagnetic spin textures has never been applied before, opening the field of antiferromagnetic spintronics to many more material platforms with complex magnetic textures. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Comments: 7 pages, 4 Figures, supplement available on reasonable request

Journal ref: Science Advances 08 Jan 2021: Vol. 7, no. 2, eabd8452

Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall

Authors: Yen-Lin Huang, Lu Zheng, Peng Chen, Xiaoxing Cheng, Shang-Lin Hsu, Tiannan Yang, Xiaoyu Wu, Louis Ponet, Ramamoorthy Ramesh, Long-Qing Chen, Sergey Artyukhin, Ying-Hao Chu, Keji Lai

Abstract: Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103… ▽ More Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103 S/m is observed in certain BiFeO3 DWs, which is about 100,000 times greater than the carrier-induced dc conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the ac conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for RF applications. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Imaging uncompensated moments and exchange-biased emergent ferromagnetism in FeRh thin films

Authors: Isaiah Gray, Gregory M. Stiehl, John T. Heron, Antonio B. Mei, Darrell G. Schlom, Ramamoorthy Ramesh, Daniel C. Ralph, Gregory D. Fuchs

Abstract: Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1… ▽ More Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1st-order phase transition to a ferromagnetic state near 100~$^\circ$C. FeRh provides the unique opportunity to study both uncompensated moments in the antiferromagnetic phase and the interaction of uncompensated moments with emergent ferromagnetism within a relatively broad (10-15~$^\circ$C) temperature range near $T_C$. In the AF phase below $T_C$, we image both pinned UMs, which cause local vertical exchange bias, and unpinned UMs, which exhibit an enhanced coercive field that reflects exchange-coupling to the AF bulk. Near $T_C$, where AF and FM order coexist, we find that the emergent FM order is exchange-coupled to the bulk Néel order. This exchange coupling leads to the nucleation of unusual configurations in which different FM domains are pinned parallel, antiparallel, and perpendicular to the applied magnetic field before suddenly collapsing into a state uniformly parallel to the field. △ Less

Submitted 17 June, 2019; originally announced June 2019.

Comments: 29 pages and 16 figures with appendix

Journal ref: Phys. Rev. Materials 3, 124407 (2019)

Tunable Giant Exchange Bias in an Intercalated Transition Metal Dichalcogenide

Authors: Spencer Doyle, Caolan John, Eran Maniv, Ryan A. Murphy, Ariel Maniv, Sanath K. Ramakrishna, Yun-Long Tang, Ramamoorthy Ramesh, Jeffrey R. Long, Arneil P. Reyes, James G. Analytis

Abstract: The interplay of symmetry and quenched disorder leads to some of the most fundamentally interesting and technologically important properties of correlated materials. It also poses the most vexing of theoretical challenges. Nowhere is this more apparent than in the study of spin glasses. A spin glass is characterized by an ergodic landscape of states - an innumerable number of possibilities that ar… ▽ More The interplay of symmetry and quenched disorder leads to some of the most fundamentally interesting and technologically important properties of correlated materials. It also poses the most vexing of theoretical challenges. Nowhere is this more apparent than in the study of spin glasses. A spin glass is characterized by an ergodic landscape of states - an innumerable number of possibilities that are only weakly distinguished energetically, if at all. We show in the material Fe$_x$NbS$_2$, this landscape of states can be biased by coexisitng antiferromagnetic order. This process leads to a phenomenon of broad technological importance: giant, tunable exchange bias. We observe exchange biases that exceed those of conventional materials by more than two orders of magnitude. This work illustrates a novel route to giant exchange bias by leveraging the interplay of frustration and disorder in exotic materials. △ Less

Submitted 11 April, 2019; originally announced April 2019.

Comments: 18 pages, 4 figures

Journal ref: Nature Physics, volume 17, pages 525-530 (2021)

A high-energy density antiferroelectric made by interfacial electrostatic engineering

Authors: Julia A. Mundy, Colin A. Heikes, Bastien F. Grosso, Dan Ferenc Segedin, Zhe Wang, Berit H. Goodge, Quintin N. Meier, Christopher T. Nelson, Bhagwati Prasad, Lena F. Kourkoutis, William D. Ratcliff, Nicola A. Spaldin, Ramamoorthy Ramesh, Darrell G. Schlom

Abstract: Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the low storage capacity of conventional dielectric materials. To mitigate this issue, antiferroelectric materials have been proposed, but relatively few families of… ▽ More Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the low storage capacity of conventional dielectric materials. To mitigate this issue, antiferroelectric materials have been proposed, but relatively few families of antiferroelectric materials have been identified to date. Here, we propose a new design strategy for the construction of lead-free antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. We show that by confining atomically-precise thin layers of BiFeO3 in a dielectric matrix that we can induce a metastable antiferroelectric structure. Application of an electric field reversibly switches between this new phase and a ferroelectric state, in addition, tuning of the dielectric layer causes coexistence of the ferroelectric and antiferroelectric states. Precise engineering of the structure generates an antiferroelectric phase with energy storage comparable to that of the best lead-based materials. The use of electrostatic confinement provides a new pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses. △ Less

Submitted 22 December, 2018; originally announced December 2018.

Comments: 17 pages, 4 figures

Discovery of Ordered Vortex Phase in Multiferroic Oxide Superlattices

Authors: Antonio B. Mei, Ramamoorthy Ramesh, Darrell G. Schlom

Abstract: Ferroics, characterized by a broken symmetry state with nonzero elastic, polar, or magnetic order parameters $\vec{u}$, are recognized platforms for staging and manipulating topologically-protected structures as well as for detecting unconventional topological phenomena. The unrealized possibility of producing ordered topological phases in magnetoelectric multiferroics, exhibiting coupled magnetic… ▽ More Ferroics, characterized by a broken symmetry state with nonzero elastic, polar, or magnetic order parameters $\vec{u}$, are recognized platforms for staging and manipulating topologically-protected structures as well as for detecting unconventional topological phenomena. The unrealized possibility of producing ordered topological phases in magnetoelectric multiferroics, exhibiting coupled magnetic and polar order parameters, is anticipated to engender novel functionality and open avenues for manipulating topological features. Here, we report the discovery of an ordered $π_1$-$S_\infty$ vortex phase within single-phase magnetoelectric multiferroic BiFeO$_3$. The phase, characterized by positive topological charge and chiral staggering, is realized in coherent TbScO$_3$ and BiFeO$_3$ superlattices and established via the combination of direct- and Fourier-space analyses. Observed order-parameter morphologies are reproduced with a field model describing the local order-parameter stiffness and competing non-local dipole-dipole interactions. Anisotropies canting the order parameter towards $\left<100\right>$ suppress chiral staggering and produced a competing $π_1$-$C_{\infty v}$ vortex phase in which cores are centered. △ Less

Submitted 30 October, 2018; originally announced October 2018.

Comments: 4 pages, 3 figures

Voltage Control of Uni-directional Anisotropy in Ferromagnet-Multiferroic System

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Chia-Ching Lin, Prasad Bhagwati, Yen Lin Huang, Anoop R. Damodaran, Zuhuang Chen, Ramamoorthy Ramesh, Ian A. Young

Abstract: Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., ~ 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic… ▽ More Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., ~ 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic (AFM) and FE orders is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as CoFe or LSMO. While previous work has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field, several puzzling issues remain. Perhaps the most intriguing among them is that the BiFeO3-CoFe bilayer did not demonstrate any electrically controlled directional anisotropy, i.e., an exchange bias, which is a potential mechanism for 180o magnetic reversal and is independent of switching kinetics. However, what is needed/preferred for logic and memory is a magneto-electric mechanism that works analogous to an applied field, i.e a uni-directional anisotropy that is voltage modulated. Here, we present the evidence of electrical control of exchange bias of a laterally scaled spin valve that is exchange-coupled to BiFeO3 at room temperature. We show that the exchange bias in this bilayer is thermally robust, electrically controlled and reversible. We anticipate that magneto-electricity at such scaled dimensions provides a powerful pathway for computing beyond the modern nanoelectronics transistors by enabling a new class of non-volatile, ultra-low energy computing elements. △ Less

Submitted 25 January, 2018; originally announced January 2018.

Unexpected Termination Switching and Polarity Compensation in LaAlO3/SrTiO3 heterostructures

Authors: Guneeta Singh-Bhalla, Pim B. Rossen, Gunnar K. Palsson, Jaganatha S. Suresha, Di Yi, Abhigyan Dasgupta, David Doenning, Victor G. Ruiz, Ajay K. Yadav, Morgan Trassin, John T. Heron, Charles S. Fadley, Rossitza Pentcheva, Jayakanth Ravichandran, Ramamoorthy Ramesh

Abstract: Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulati… ▽ More Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulating. Here, we observe evidence for an asymmetry in the surface chemical termination for nominally stoichiometric LaAlO3 films in contact with the two different surface layers of SrTiO3 crystals, TiO2 and SrO. Using several element specific probes, we find that the surface termination of LaAlO3 remains AlO2 irrespective of the starting termination of SrTiO3 substrate surface. We use a combination of cross-plane tunneling measurements and first principles calcula- tions to understand the effects of this unexpected termination on band alignments and polarity compensation of LaAlO3/SrTiO3 heterostructures. An asymmetry in LaAlO3 polarity compensation and resulting electronic properties will fundamentally limit atomic level control of oxide heterostructures. △ Less

Submitted 18 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. Materials 2, 112001 (2018)

Differential voltage amplification from ferroelectric negative capacitance

Authors: Asif I. Khan, Michael Hoffmann, Korok Chatterjee, Zhongyuan Lu, Ruijuan Xu, Claudy Serrao, Samuel Smith, Lane W. Martin, Chenming C. Hu, Ramamoorthy Ramesh, Sayeef Salahuddin

Abstract: It is well known that one needs an external source of energy to provide voltage amplification. Because of this, conventional circuit elements such as resistors, inductors or capacitors cannot provide amplification all by themselves. Here, we demonstrate that a ferroelectric can cause a differential amplification without needing such an external energy source. As the ferroelectric switches from one… ▽ More It is well known that one needs an external source of energy to provide voltage amplification. Because of this, conventional circuit elements such as resistors, inductors or capacitors cannot provide amplification all by themselves. Here, we demonstrate that a ferroelectric can cause a differential amplification without needing such an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. {This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only, has fundamental ramifications for next generation electronics. △ Less

Submitted 29 September, 2017; originally announced September 2017.

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Authors: Zhongyuan Lu, Claudy Serrao, Asif I. Khan, James D. Clarkson, Justin C. Wong, Ramamoorthy Ramesh, Sayeef Salahuddin

Abstract: We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor made of thin film MoS$_2$. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is ob… ▽ More We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor made of thin film MoS$_2$. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is observed. Importantly, when the gate voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS$_2$ in its original phase, thereby providing a non-volatile state. Thus a metallic or insulating phase can be written, erased or retained simply by applying a gate voltage to the transistor. △ Less

Submitted 24 July, 2017; v1 submitted 17 May, 2017; originally announced May 2017.

Atomically flat single terminated oxide substrate surfaces

Authors: Abhijit Biswas, Chan Ho Yang, Ramamoorthy Ramesh, Yoon H Jeong

Abstract: To achieve high quality epitaxial thin films and heterostructures of transition metal oxides with atomically controlled interfaces, one critical requirement is the use of atomically flat single terminated oxide substrates since the atomic arrangements and the reaction chemistry of the topmost surface layer of substrates determine the growth and consequent properties of the overlying films. Achievi… ▽ More To achieve high quality epitaxial thin films and heterostructures of transition metal oxides with atomically controlled interfaces, one critical requirement is the use of atomically flat single terminated oxide substrates since the atomic arrangements and the reaction chemistry of the topmost surface layer of substrates determine the growth and consequent properties of the overlying films. Achieving the atomically flat and chemically single terminated surface state of commercially available substrates, however, requires judicious efforts because the surface of as-received substrates is of chemically mixed nature and also often polar. In this review, we summarize the surface treatment procedures to accomplish atomically flat surfaces with single terminating layer for various metal oxide substrates. We particularly focus on the substrates with lattice constant ranging from 4.00 to 3.70 angstrom, as the lattice constant of most perovskite materials falls into this range. For materials outside the range, one can utilize the substrates to induce compressive or tensile strain on the films and explore new states not available in bulk. The substrates covered in this review, which have been chosen with commercial availability and, most importantly, experimental practicality as a criterion, are KTaO3, REScO3 (RE = Rare-earth elements), SrTiO3, La0.18Sr0.82Al0.59Ta0.41O3 (LSAT), NdGaO3, LaAlO3, SrLaAlO4, and YAlO3. Analyzing all the established procedures, we conclude that atomically flat surfaces with selective A- or B-site single termination would be obtained for most commercially available oxide substrates. We further note that this topmost surface layer selectivity would provide an additional degree of freedom in searching for unforeseen emergent phenomena and functional applications in epitaxial oxide thin films and heterostructures with atomically controlled interfaces. △ Less

Submitted 29 May, 2017; v1 submitted 9 May, 2017; originally announced May 2017.

Comments: A review article

Journal ref: Progress in Surface Science 92 (2017) 117

Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy

Authors: Z. Q. Liu, L. Li, Z. Gai, J. D. Clarkson, S. L. Hsu, A. T. Wong, L. S. Fan, M. -W. Lin, C. M. Rouleau, T. Z. Ward, H. N. Lee, A. S. Sefat, H. M. Christen, R. Ramesh

Abstract: We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by… ▽ More We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by tetragonality modulation in FeRh thin films, which is in contrast to the large volume expansion in the conventional temperature-driven magnetic phase transition in FeRh. Moreover, all the experimental results in this work illustrate FeRh as a mixed-phase model system well similar to phase-separated colossal magnetoresistance systems with phase instability therein. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Comments: 6 pages, 3 figures

Journal ref: Physical Review Letters 116, 097203 (2016)

Electric-field Induced Reversible Switching of the Magnetic Easy-axis in Co/BiFeO3/SrRuO3/SrTiO3 Heterostructures

Authors: T. R. Gao, X. H. Zhang, W. Ratcliff II, S. Maruyama, M. Murakami, V. Anbusathaiah, Z. Yamani, P. J. Chen, R. Shull, R. Ramesh, I. Takeuchi

Abstract: Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at room temperature has only been demonstrated using BiFeO3 (BFO) films grown on DyScO3 (refs 1 and 2), a unique and expensive substrate, which gives rise to a par… ▽ More Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at room temperature has only been demonstrated using BiFeO3 (BFO) films grown on DyScO3 (refs 1 and 2), a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BFO. Here, we demonstrate reversible E-field-induced switching of the magnetic state of the Co layer in Co/BFO (001) thin film heterostructures fabricated on SrTiO3 substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches by 45° back and forth between the (100) and the (110) crystallographic directions of SrTiO3 as a result of alternating application of positive and negative voltage pulses on BFO. The coercivity of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. To explain the observation, we have also measured the exact canting angle of the antiferromagnetic G-type domain in BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and non-volatile magnetoelectronic devices. △ Less

Submitted 22 November, 2016; originally announced November 2016.

Revealing the Hidden Structural Phases of FeRh

Authors: **woong Kim, R. Ramesh, Nicholas Kioussis

Abstract: ${\it Ab}$ ${\it initio}$ electronic structure calculations reveal that tetragonal distortion has a dramatic effect on the relative stability of the various magnetic structures (C-, A-, G-, A$'$-AFM, and FM) of FeRh giving rise to a wide range of novel stable/metastable structures and magnetic phase transitions between these states. We predict that the ${\it cubic}… ▽ More ${\it Ab}$ ${\it initio}$ electronic structure calculations reveal that tetragonal distortion has a dramatic effect on the relative stability of the various magnetic structures (C-, A-, G-, A$'$-AFM, and FM) of FeRh giving rise to a wide range of novel stable/metastable structures and magnetic phase transitions between these states. We predict that the ${\it cubic}$ G-AFM structure, which was believed thus far to be the ground state, is metastable and that the ${\it tetragonally}$ expanded G-AFM is the stable structure. The low energy barrier separating these states suggests phase coexistence at room temperature. We propose a novel A$'$-AFM phase to be the ${\it global}$ ground state among all magnetic phases which arises from the strain-induced tuning of the exchange interactions. The results elucidate the underlying mechanism for the recent experimental findings of electric-field control of magnetic phase transition driven via tetragonal strain. The novel magnetic phase transitions open interesting prospects for exploiting strain engineering for the next-generation memory devices. △ Less

Submitted 3 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. B 94, 180407 (2016)

An invisible non-volatile solid-state memory

Authors: J. Clarkson, C. Frontera, Z. Q. Liu, Y. Lee, J. Kim, K. Cordero, S. Wizotsky, F. Sanchez, J. Sort, S. L. Hsu, C Ko, J. Wu, H. M. Christen, J. T. Heron, D. G. Schlom, S. Salahuddin, L. Aballe, M. Foerster, N. Kioussis, J. Fontcuberta, I. Fina, R. Ramesh, X. Marti

Abstract: Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable res… ▽ More Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory. △ Less

Submitted 7 September, 2016; v1 submitted 12 April, 2016; originally announced April 2016.

Comments: 14 pages, 4 figures

Atomic-scale control of magnetic anisotropy via novel spin-orbit coupling effect in La2/3Sr1/3MnO3/SrIrO3 superlattices

Authors: Di Yi, Jian Liu, Shang-Lin Hsu, Lipeng Zhang, Yongseong Choi, Jong-Woo Kim, Zuhuang Chen, James Clarkson, Claudy R. Serrao, Elke Arenholz, Philip J. Ryan, Haixuan Xu, Robert J. Birgeneau, Ramamoorthy Ramesh

Abstract: Magnetic anisotropy (MA) is one of the most important material properties for modern spintronic devices. Conventional manipulation of the intrinsic MA, i.e. magnetocrystalline anisotropy (MCA), typically depends upon crystal symmetry. Extrinsic control over the MA is usually achieved by introducing shape anisotropy or exchange bias from another magnetically ordered material. Here we demonstrate a… ▽ More Magnetic anisotropy (MA) is one of the most important material properties for modern spintronic devices. Conventional manipulation of the intrinsic MA, i.e. magnetocrystalline anisotropy (MCA), typically depends upon crystal symmetry. Extrinsic control over the MA is usually achieved by introducing shape anisotropy or exchange bias from another magnetically ordered material. Here we demonstrate a pathway to manipulate MA of 3d transition metal oxides (TMOs) by digitally inserting non-magnetic 5d TMOs with pronounced spin-orbit coupling (SOC). High quality superlattices comprised of ferromagnetic La2/3Sr1/3MnO3 (LSMO) and paramagnetic SrIrO3 (SIO) are synthesized with the precise control of thickness at atomic scale. Magnetic easy axis reorientation is observed by controlling the dimensionality of SIO, mediated through the emergence of a novel spin-orbit state within the nominally paramagnetic SIO. △ Less

Submitted 23 May, 2016; v1 submitted 11 March, 2016; originally announced March 2016.

Comments: Proceedings of the National Academy of Sciences, May 2016

Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Ramamoorthy Ramesh, Huichu Li, Ian A. Young

Abstract: As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technolo… ▽ More As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technology has remained elusive. Here, we propose a scalable spintronic logic device which operates via spin-orbit transduction combined with magneto-electric switching. The proposed Magneto-Electric Spin Orbit (MESO) logic enables a new paradigm to continue scaling of logic performance to near thermodynamic limits for GHz logic (100 kT switching energy at 100 ps delay). The proposed MESO devices scale strongly and favorably with critical dimensions of the device, showing a cubic dependence of switching energy on size, (E_m proportional to W^3), and square dependence on voltage (E_m proportional to V^2). The excellent scaling is obtained thanks to the properties of the spin orbit effects (e.g. Inverse Spin Hall Effect (ISHE) and Inverse Rashba-Edelstein Effect (IREE)) and the dependence of capacitance on size. The operating voltages for these devices are predicted to be < 100 mV allowing a significant jump ahead of historic trends of scaling voltage with size and corresponding reduction of energy. Interconnect resistance is a critical obstacle for scaling beyond 10 nm dimensions. We project a less detrimental impact of interconnect resistance and show that MESO logic is amenable for highly resistive interconnects (100 uOhm.cm-1 mOhm.cm) which opens a possibility to use nano-metallic (width < bulk electron mean free path) or doped semiconducting wires (width<5 nm). A scalable, CMOS compatible, non-volatile logic family proposed here may enable the next multi-generational scaling of computing devices. △ Less

Submitted 5 March, 2017; v1 submitted 16 December, 2015; originally announced December 2015.

Comments: (60 pages, including supplementary) Updated Figure 3B. Contains expanded energy calculations, effect of SOC resistivity, supported with device simulations in supplementary Sections F,G