Showing 1–44 of 44 results for author: Ramanathan, S

Hydrogen-do** mediated solid state thermal switch

Authors: Ronald Warzoha, Brian Donovan, Yifei Sun, Elena Cimpoiasu, Shriram Ramanathan

Abstract: Recent reports reveal that isothermal chemical do** of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this work, we interrogate the magnitude change in temperature dependence of thermal conductivity upon chemical do** of hydrogen, as any changes to the thermal pro… ▽ More Recent reports reveal that isothermal chemical do** of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this work, we interrogate the magnitude change in temperature dependence of thermal conductivity upon chemical do** of hydrogen, as any changes to the thermal properties upon do** offer a route to solid-state thermal switches as well as another potential signal to monitor in a diverse set of sensing, electronic, and optical applications. Using frequency-domain thermoreflectance, we demonstrate that a large concentration of hydrogen (~ 0.1 - 0.5 H/unit cell) completely suppresses the electronic contribution to thermal conductivity in NdNiO3 thin films and reduces the phononic contribution by a factor of 2. These results are critical for the design of next-generation solid-state thermal switches, sensors, extreme environment electronics and neuromorphic memory architectures. △ Less

Submitted 14 May, 2024; originally announced May 2024.

Comments: preprint

Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals

Authors: B. Raju Naik, Yadu Chandran, Kakunuri Rohini, Divya Verma, Shriram Ramanathan, Viswanath Balakrishnan

Abstract: Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with non-trivial collective properties. Here, we report the discovery of discrete threshold switching voltages with constant threshold voltage difference between cycles… ▽ More Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with non-trivial collective properties. Here, we report the discovery of discrete threshold switching voltages with constant threshold voltage difference between cycles in vanadium oxide crystals. The observed threshold fields over 10000 cycles are ~100X lower than that noted for stoichiometric VO2 and show unique discrete behaviour. We correlate the observed discrete memristor behaviour with the valence change mechanism and fluctuations in the chemical composition of spatially distributed VO2-VnO2n-1 complex oxide phases. Design of chemical heterogeneity in Mott insulators, therefore, offers an intriguing path to realizing low-energy neuromorphic devices. △ Less

Submitted 10 January, 2024; originally announced January 2024.

Comments: 21 pages, 4 figures

High-speed sensing of RF signals with phase change materials

Authors: Ranjan Kumar Patel, Yifan Yuan, Ravindra Singh Bisht, Ivan Seskar, Narayan Mandayam, Shriram Ramanathan

Abstract: RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well a… ▽ More RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well as off-stoichiometric vanadium oxide films can be modulated with RF wave exposures from a distance. The response of the materials to the RF waves can be enhanced by either increasing the power received by the sample or reducing channel separation. We report a significant ~73% drop in resistance with a 5 μm channel gap of the VO2 film at a characteristic response time of 16 microseconds. The peak sensitivity is proximal to the phase transition temperature boundary that can be engineered via do** and crystal chemistry. Dynamic sensing measurements highlight the films' rapid response and broad-spectrum sensitivity. Engineering electronic phase boundaries in correlated electron systems could offer new capabilities in emerging communication technologies. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Comments: 16 pages, 5 figures

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Authors: Yifan Yuan, Michele Kotiuga, Tae Joon Park, Yuanyuan Ni, Arnob Saha, Hua Zhou, Jerzy T. Sadowski, Abdullah Al-Mahboob, Haoming Yu, Kai Du, Minning Zhu, Sunbin Deng, Ravindra S. Bisht, Xiao Lyu, Chung-Tse Michael Wu, Peide D. Ye, Abhronil Sengupta, Sang-Wook Cheong, Xiaoshan Xu, Karin M. Rabe, Shriram Ramanathan

Abstract: Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential ca… ▽ More Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trap** of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H do**. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion do**. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 13 pages, 5 figures

Temporal credit assignment for one-shot learning utilizing a phase transition material

Authors: Alessandro R. Galloni, Yifan Yuan, Minning Zhu, Haoming Yu, Ravindra S. Bisht, Chung-Tse Michael Wu, Christine Grienberger, Shriram Ramanathan, Aaron D. Milstein

Abstract: Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and var… ▽ More Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing phase transitions. Here we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically-relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to 4 fold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials, and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning. △ Less

Submitted 29 September, 2023; originally announced October 2023.

Comments: 37 pages, 5 figures, 6 supplementary figures

Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices

Authors: Sampath Gamage, Sukriti Manna, Marc Zajac, Steven Hancock, Qi Wang, Sarabpreet Singh, Mahdi Ghafariasl, Kun Yao, Tom Tiwald, Tae Joon Park, David P. Landau, Haidan Wen, Subramanian Sankaranarayanan, Pierre Darancet, Shriram Ramanathan, Yohannes Abate

Abstract: Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick… ▽ More Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function. △ Less

Submitted 29 August, 2023; originally announced September 2023.

Comments: 30 pages, 5 figures in the main text and 5 figures in the Supplementary Material

Electrically tunable VO2-metal metasurface for mid-infrared switching, limiting, and nonlinear isolation

Authors: Jonathan King, Chenghao Wan, Tae Joon Park, Sanket Despande, Zhen Zhang, Shriram Ramanathan, Mikhail A. Kats

Abstract: We demonstrate an electrically controlled metal-VO2 metasurface for the mid-wave infrared that simultaneously functions as a tunable optical switch, an optical limiter with a tunable limiting threshold, and a nonlinear optical isolator with a tunable operating range. The tunability is achieved via Joule heating through the metal comprising the metasurface, resulting in an integrated optoelectronic… ▽ More We demonstrate an electrically controlled metal-VO2 metasurface for the mid-wave infrared that simultaneously functions as a tunable optical switch, an optical limiter with a tunable limiting threshold, and a nonlinear optical isolator with a tunable operating range. The tunability is achieved via Joule heating through the metal comprising the metasurface, resulting in an integrated optoelectronic device. As an optical switch, the device has an experimental transmission ratio of ~100 when varying the bias current. Operating as an optical limiter, we demonstrated tunability of the limiting threshold from 20 mW to 180 mW of incident laser power. Similar degrees of tunability are also achieved for nonlinear optical isolation, which enables asymmetric (nonreciprocal) transmission. △ Less

Submitted 21 July, 2023; v1 submitted 15 March, 2023; originally announced March 2023.

Comments: Main text + supplementary

Efficient Probabilistic Computing with Stochastic Perovskite Nickelates

Authors: Tae Joon Park, Kemal Selcuk, Hai-Tian Zhang, Sukriti Manna, Rohit Batra, Qi Wang, Haoming Yu, Subramanian K. R. S. Sankaranarayanan, Hua Zhou, Kerem Y. Camsari, Shriram Ramanathan

Abstract: Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in electronic hardware. Here, we demonstrate intrinsic stochastic resistance switching controlled via electric fields in perovskite nickelates doped with hydrogen. The ability of hydrogen ions to reside in various metastable con… ▽ More Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in electronic hardware. Here, we demonstrate intrinsic stochastic resistance switching controlled via electric fields in perovskite nickelates doped with hydrogen. The ability of hydrogen ions to reside in various metastable configurations in the lattice leads to a distribution of transport gaps. With experimentally characterized p-bits, a shared-synapse p-bit architecture demonstrates highly-parallelized and energy-efficient solutions to optimization problems such as integer factorization and Boolean-satisfiability. The results introduce perovskite nickelates as scalable potential candidates for probabilistic computing and showcase the potential of light-element dopants in next-generation correlated semiconductors. △ Less

Submitted 30 August, 2022; originally announced August 2022.

Journal ref: Nano Letters (2022)

Quantum materials for energy-efficient neuromorphic computing

Authors: Axel Hoffmann, Shriram Ramanathan, Julie Grollier, Andrew D. Kent, Marcelo Rozenberg, Ivan K. Schuller, Oleg Shpyrko, Robert Dynes, Yeshaiahu Fainman, Alex Frano, Eric E. Fullerton, Giulia Galli, Vitaliy Lomakin, Shyue ** Ong, Amanda K. Petford-Long, Jonathan A. Schuller, Mark D. Stiles, Yayoi Takamura, Yimei Zhu

Abstract: Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, su… ▽ More Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems. △ Less

Submitted 4 April, 2022; originally announced April 2022.

Journal ref: APL Materials 10, 070904 (2022)

Wavelength-by-wavelength temperature-independent thermal radiation utilizing an insulator-metal transition

Authors: Jonathan King, Alireza Shahsafi, Zhen Zhang, Chenghao Wan, Yuzhe Xiao, Chengzi Huang, Yifei Sun, Patrick J. Roney, Shriram Ramanathan, Mikhail A. Kats

Abstract: Both the magnitude and spectrum of the blackbody-radiation distribution change with temperature. Here, we designed the temperature-dependent spectral emissivity of a coating to counteract all the changes in the blackbody-radiation distribution over a certain temperature range, enabled by the nonhysteretic insulator-to-metal phase transition of SmNiO3. At each wavelength within the long-wave infrar… ▽ More Both the magnitude and spectrum of the blackbody-radiation distribution change with temperature. Here, we designed the temperature-dependent spectral emissivity of a coating to counteract all the changes in the blackbody-radiation distribution over a certain temperature range, enabled by the nonhysteretic insulator-to-metal phase transition of SmNiO3. At each wavelength within the long-wave infrared atmospheric-transparency window, the thermal radiance of our coating remains nearly constant over a temperature range of at least 20 °C. Our approach can conceal thermal gradients and transient temperature changes from infrared imaging systems, including those that discriminate by wavelength, such as multispectral and hyperspectral cameras. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Comments: Main text + supplementary

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

Authors: Hongyan Mei, Alexander Koch, Chenghao Wan, Jura Rensberg, Zhen Zhang, Jad Salman, Martin Hafermann, Maximilian Schaal, Yuzhe Xiao, Raymond Wambold, Shriram Ramanathan, Carsten Ronning, Mikhail A. Kats

Abstract: We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subs… ▽ More We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable do** of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of do** or defect density are required. △ Less

Submitted 2 June, 2022; v1 submitted 3 February, 2022; originally announced February 2022.

Comments: Main text + supplementary. Updated manuscript with some more science

Proton distribution visualization in perovskite nickelate devices utilizing nanofocused X-rays

Authors: Ivan A. Zaluzhnyy, Peter O. Sprau, Richard Tran, Qi Wang, Hai-Tian Zhang, Zhen Zhang, Tae Joon Park, Nelson Hua, Boyan Stoychev, Mathew J. Cherukara, Martin V. Holt, Evgeny Nazarertski, Xiao**g Huang, Hanfei Yan, Ajith Pattammattel, Yong S. Chu, Shyue ** Ong, Shriram Ramanathan, Oleg G. Shpyrko, Alex Frano

Abstract: We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small latti… ▽ More We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small lattice distortion in the doped regions. Together, our results directly show that the knob which proton do** modifies is the electronic valency, and not the crystal lattice. The studies are relevant to on-going efforts to disentangle structural and electronic effects across metal-insulator phase transitions in correlated oxides. △ Less

Submitted 13 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. Materials 5, 095003 (2021)

Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect

Authors: Gaurab Rimal, Yiting Liu, Caleb Schmidt, Hussein Hijazi, Elizabeth Skoropata, Jason Lapano, Debangshu Mukherjee, Raymond R. Unocic, Matthew F. Chisholm, Yifei Sun, Haoming Yu, Cheng-Jun Sun, Hua Zhou, Matthew Brahlek, Leonard C. Feldman, Shriram Ramanathan, Seongshik Oh

Abstract: PdCoO2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals, and exhibits hydrodynamic electronic transport with extremely long mean free path at cryogenic temperatures. Nonetheless, it is nonmagnetic despite the presence of the cobalt ion. Here, we show that a mild hydrogenation p… ▽ More PdCoO2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals, and exhibits hydrodynamic electronic transport with extremely long mean free path at cryogenic temperatures. Nonetheless, it is nonmagnetic despite the presence of the cobalt ion. Here, we show that a mild hydrogenation process reduces PdCoO2 thin films to an atomically-mixed alloy of PdCo with strong out-of-plane ferromagnetism and sign-tunable anomalous Hall effect. Considering that many other compounds remain little affected under a similar hydrogenation condition, this discovery may provide a route to creating novel spintronic heterostructures combining strong ferromagnetism, involving oxides and other functional materials. △ Less

Submitted 27 April, 2021; originally announced April 2021.

Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction

Authors: Aditya Sood, Xiaozhe Shen, Yin Shi, Suhas Kumar, Su Ji Park, Marc Zajac, Yifei Sun, Long-Qing Chen, Shriram Ramanathan, Xijie Wang, William C. Chueh, Aaron M. Lindenberg

Abstract: Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements… ▽ More Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide switches. We discover an electrically-triggered, isostructural state that forms transiently on microsecond timescales, stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase bears striking similarity to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway across eight orders of magnitude of timescale. Our results establish a new route for uncovering non-equilibrium and metastable phases in correlated materials, and open avenues for engineering novel dynamical behavior in nanoelectronics. △ Less

Submitted 11 February, 2021; originally announced February 2021.

Journal ref: Science, Vol. 373, Issue 6552, pp. 352-355 (2021)

Sudden collapse of magnetic order in oxygen deficient nickelate films

Authors: Jiarui Li, Robert J. Green, Zhen Zhang, Ronny Sutarto, Jerzy T. Sadowski, Zhihai Zhu, Grace Zhang, Da Zhou, Yifei Sun, Feizhou He, Shriram Ramanathan, Riccardo Comin

Abstract: Oxygen vacancies play a crucial role in the control of the electronic, magnetic, ionic, and transport properties of functional oxide perovskites. Rare earth nickelates (RENiO$_{3-x}$) have emerged over the years as a rich platform to study the interplay between the lattice, the electronic structure, and ordered magnetism. In this study, we investigate the evolution of the electronic and magnetic s… ▽ More Oxygen vacancies play a crucial role in the control of the electronic, magnetic, ionic, and transport properties of functional oxide perovskites. Rare earth nickelates (RENiO$_{3-x}$) have emerged over the years as a rich platform to study the interplay between the lattice, the electronic structure, and ordered magnetism. In this study, we investigate the evolution of the electronic and magnetic structure in thin films of RENiO$_{3-x}$, using a combination of X-ray absorption spectroscopy and imaging, resonant X-ray scattering, and extended multiplet ligand field theory modeling. We find that oxygen vacancies modify the electronic configuration within the Ni-O orbital manifolds, leading to a dramatic evolution of long-range electronic transport pathways despite the absence of nanoscale phase separation. Remarkably, magnetism is robust to substantial levels of carrier do**, and only a moderate weakening of the $(1/4, 1/4, 1/4)_{pc}$ antiferromagnetic order parameter is observed, whereas the magnetic transition temperature is largely unchanged. Only at a certain point long-range magnetism is abruptly erased without an accompanying structural transition. We propose the progressive disruption of the 3D magnetic superexchange pathways upon introduction of point defects as the mechanism behind the sudden collapse of magnetic order in oxygen-deficient nickelates. Our work demonstrates that, unlike most other oxides, ordered magnetism in RENiO$_{3-x}$ is mostly insensitive to carrier do**. The sudden collapse of ordered magnetism upon oxygen removal may provide a new mechanism for solid-state magneto-ionic switching and new applications in antiferromagnetic spintronics. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 187602 (2021)

Nanoscale Thermal Imaging of VO$_2$ via Poole-Frenkel Conduction

Authors: Alyson Spitzig, Adam Pivonka, Alex Frenzel, Jeehoon Kim, Changhyun Ko, You Zhou, Kevin O'Connor, Eric Hudson, Shriram Ramanathan, Jennifer E. Hoffman, Jason Hoffman

Abstract: We present a method for nanoscale thermal imaging of insulating thin films using atomic force microscopy (AFM), and we demonstrate its utility on VO$_2$. We sweep the applied voltage $V$ to a conducting AFM tip in contact mode and measure the local current $I$ through the film. By fitting the $IV$ curves to a Poole-Frenkel conduction model at low $V$, we calculate the local temperature with spatia… ▽ More We present a method for nanoscale thermal imaging of insulating thin films using atomic force microscopy (AFM), and we demonstrate its utility on VO$_2$. We sweep the applied voltage $V$ to a conducting AFM tip in contact mode and measure the local current $I$ through the film. By fitting the $IV$ curves to a Poole-Frenkel conduction model at low $V$, we calculate the local temperature with spatial resolution better than 50 nm using only fundamental constants and known film properties. Our thermometry technique enables local temperature measurement of \textit{any} insulating film dominated by the Poole-Frenkel conduction mechanism, and can be extended to insulators that display other conduction mechanisms. △ Less

Submitted 13 April, 2022; v1 submitted 7 March, 2019; originally announced March 2019.

Journal ref: Appl. Phys. Lett. 120, 151602 (2022)

Temperature-independent thermal radiation

Authors: Alireza Shahsafi, Patrick Roney, You Zhou, Zhen Zhang, Yuzhe Xiao, Chenghao Wan, Raymond Wambold, Jad Salman, Zhaoning Yu, Jiarui Li, Jerzy T. Sadowski, Riccardo Comin, Shriram Ramanathan, Mikhail A. Kats

Abstract: Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases monotonically with temperature in a one-to-one relationship that enables applications such as infrared imaging and non-contact thermometry. Here, we demonstrate ultrathin t… ▽ More Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases monotonically with temperature in a one-to-one relationship that enables applications such as infrared imaging and non-contact thermometry. Here, we demonstrate ultrathin thermal emitters that violate this one-to-one relationship via the use of samarium nickel oxide (SmNiO3), a strongly correlated quantum material that undergoes a fully reversible, temperature-driven solid-state phase transition. The smooth and hysteresis-free nature of this unique insulator-to-metal (IMT) phase transition allows us to engineer the temperature dependence of emissivity to precisely cancel out the intrinsic blackbody profile described by the Stefan-Boltzmann law, for both heating and cooling. Our design results in temperature-independent thermally emitted power within the long-wave atmospheric transparency window (wavelengths of 8 - 14 um), across a broad temperature range of ~30 °C, centered around ~120 °C. The ability to decouple temperature and thermal emission opens a new gateway for controlling the visibility of objects to infrared cameras and, more broadly, new opportunities for quantum materials in controlling heat transfer. △ Less

Submitted 19 September, 2019; v1 submitted 1 February, 2019; originally announced February 2019.

Comments: Main text and supplementary

Strongly correlated proton-doped perovskite nickelate memory devices

Authors: Koushik Ramadoss, Fan Zuo, Yifei Sun, Zhen Zhang, Jianqiang Lin, Umesh Bhaskar, SangHoon Shin, Muhammad Ashraful Alam, Supratik Guha, Dana Weinstein, Shriram Ramanathan

Abstract: We demonstrate memory devices based on proton do** and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to… ▽ More We demonstrate memory devices based on proton do** and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing. △ Less

Submitted 1 May, 2018; originally announced May 2018.

Comments: 4 figures

Perovskite Quantum Organismoids

Authors: Fan Zuo, Priyadarshini Panda, Michele Kotiuga, Jiarui Li, Min Gu Kang, Claudio Mazzoli, Hua Zhou, Andi Barbour, Stuart Wilkins, Badri Narayanan, Mathew Cherukara, Zhen Zhang, Subramanian K. R. S. Sankaranarayanan, Riccardo Comin, Karin M. Rabe, Kaushik Roy, Shriram Ramanathan

Abstract: A central characteristic of living beings is the ability to learn from and respond to their environment leading to habit formation and decision making1-3. This behavior, known as habituation, is universal among forms of life with a central nervous system, and interestingly observed even in single cellular organisms that do not possess a brain4-5. Here, we report the discovery of habituation based… ▽ More A central characteristic of living beings is the ability to learn from and respond to their environment leading to habit formation and decision making1-3. This behavior, known as habituation, is universal among forms of life with a central nervous system, and interestingly observed even in single cellular organisms that do not possess a brain4-5. Here, we report the discovery of habituation based plasticity utilizing a perovskite quantum system by dynamical modulation of electron localization via reversible dopant incorporation. Microscopic mechanisms and pathways that enable this organismic collective charge-lattice interaction are elucidated by a combination of first-principles theory, synchrotron investigations, ab-initio dynamical simulations and in-situ environmental breathing studies. We implement a new learning algorithm inspired from the conductance relaxation behavior of perovskites that naturally incorporates habituation and demonstrate "learning to forget": a key feature of animal and human brains6. Most surprisingly, our results show that incorporating this elementary skill in learning dramatically boosts the capability of artificial cognitive systems. △ Less

Submitted 3 March, 2017; originally announced March 2017.

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

Authors: R. Jaramillo, Amanda Youssef, Austin Akey, Frank Schoofs, Shriram Ramanathan, Tonio Buonassisi

Abstract: We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface… ▽ More We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that Fermi level pinning is connected to the insulator-metal transition in doped ZnO, and that controlling this transition may be key to un-pinning the Fermi level in oxide / Si Schottky junctions. △ Less

Submitted 29 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. Applied 6, 034016 (2016)

Neuromimetic Circuits with Synaptic Devices based on Strongly Correlated Electron Systems

Authors: Sieu D. Ha, Jian Shi, Yasmine Meroz, L. Mahadevan, Shriram Ramanathan

Abstract: Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and… ▽ More Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and non-associative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogues may provide insight into biological processes such as decision making, learning and adaptation, while facilitating advanced parallel information processing in hardware. △ Less

Submitted 15 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. Applied 2, 064003 (2014)

Conductivity noise study of the insulator-metal transition and phase co-existence in epitaxial samarium nickelate thin films

Authors: Anindita Sahoo, Sieu D. Ha, Shriram Ramanathan, Arindam Ghosh

Abstract: Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is… ▽ More Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to co-existence of the metallic and insulating phases. Our experiment offers a new insight on the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates. △ Less

Submitted 3 August, 2014; originally announced August 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 90, 085116 (2014)

Reconfigurable anisotropy and functional transformations with VO$_{2}$-based metamaterial electric circuits

Authors: Salvatore Savo, You Zhou, Giuseppe Castaldi, Massimo Moccia, Vincenzo Galdi, Shriram Ramanathan, Yuki Sato

Abstract: We demonstrate an innovative multifunctional artificial material that combines exotic metamaterial properties and the environmentally responsive nature of phase change media. The tunable metamaterial is designed with the aid of two interwoven coordinate-transformation equations and implemented with a network of thin film resistors and vanadium dioxide ($VO_{2}$). The strong temperature dependence… ▽ More We demonstrate an innovative multifunctional artificial material that combines exotic metamaterial properties and the environmentally responsive nature of phase change media. The tunable metamaterial is designed with the aid of two interwoven coordinate-transformation equations and implemented with a network of thin film resistors and vanadium dioxide ($VO_{2}$). The strong temperature dependence of $VO_{2}$ electrical conductivity results in a relevant modification of the resistor network behavior, and we provide experimental evidence for a reconfigurable metamaterial electric circuit (MMEC) that not only mimics a continuous medium but is also capable of responding to thermal stimulation through dynamic variation of its spatial anisotropy. Upon external temperature change the overall effective functionality of the material switches between a "truncated-cloak" and "concentrator" for electric currents. Possible applications may include adaptive matching resistor networks, multifunctional electronic devices, and equivalent artificial materials in the magnetic domain. Additionally, the proposed technology could also be relevant for thermal management of integrated circuits △ Less

Submitted 29 May, 2014; originally announced May 2014.

Origins of bad metal conductivity and the insulator-metal transition in the rare-earth nickelates

Authors: R. Jaramillo, Sieu D. Ha, D. M. Silevitch, Shriram Ramanathan

Abstract: For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3… ▽ More For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low σwhile preserving the Drude model and without violating the uncertainty principle. △ Less

Submitted 27 September, 2013; originally announced September 2013.

Voltage-triggered Ultra-fast Metal-insulator Transition in Vanadium Dioxide Switches

Authors: You Zhou, Xiaonan Chen, Changhyun Ko, Zheng Yang, Chandra Mouli, Shriram Ramanathan

Abstract: Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM) structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between electrically-driven O… ▽ More Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM) structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between electrically-driven ON/OFF current ratio and thermally-induced resistance change during metal-insulator transition. It is also found that sharp metal-insulator transition could be triggered by external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance. △ Less

Submitted 14 July, 2013; originally announced July 2013.

Journal ref: IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 2, FEBRUARY 2013

Direct in-situ observation of structural transition driven actuation in VO2 utilizing electron transparent cantilevers

Authors: Viswanath Balakrishnan, Shriram Ramanathan

Abstract: Direct imaging and quantification of actuation in nanostructures that undergo structural phase transitions could advance our understanding of collective phenomena in the solid state. Here, we demonstrate visualization of structural phase transition induced actuation in a model correlated insulator vanadium dioxide by in-situ Fresnel contrast imaging of electron transparent cantilevers. We quantify… ▽ More Direct imaging and quantification of actuation in nanostructures that undergo structural phase transitions could advance our understanding of collective phenomena in the solid state. Here, we demonstrate visualization of structural phase transition induced actuation in a model correlated insulator vanadium dioxide by in-situ Fresnel contrast imaging of electron transparent cantilevers. We quantify abrupt, reversible cantilever motion occurring due to the stress relaxation across the structural transition from monoclinic to tetragonal phase with increasing temperature. Deflections measured in such nanoscale cantilevers can be directly correlated with macroscopic stress measurements by wafer curvature studies as well as temperature dependent electrical conduction allowing one to interrogate lattice dynamics across length scales. △ Less

Submitted 17 June, 2013; originally announced June 2013.

Comments: 23 pages, 8 figures, Nanoscale, 2013, Accepted Manuscript

GaN / VO2 heteroepitaxial p-n junctions: Band offset and minority carrier dynamics

Authors: You Zhou, Shriram Ramanathan

Abstract: We report on experimental realization of p-n heterojunctions based on p-type GaN, and an n-type correlated oxide, VO2. The band offsets are evaluated by current-voltage and capacitance voltage measurements at various temperatures. A band diagram based on the conventional band bending picture is proposed to explain the evolution of the apparent barier height from electrical measurements and it sugg… ▽ More We report on experimental realization of p-n heterojunctions based on p-type GaN, and an n-type correlated oxide, VO2. The band offsets are evaluated by current-voltage and capacitance voltage measurements at various temperatures. A band diagram based on the conventional band bending picture is proposed to explain the evolution of the apparent barier height from electrical measurements and it suggests that the work function of VO2 decreases by ~0.2 eV when it goes through the insulator to metal transtion, in qualitative agreement with Kelvin force microscopy measurements reported in literature. The frequency dependent capacitance measurements allows us to differentiate the miniority carrier effect from the interface states and series resistance contributions, and estimate the minority carrier lifetime in insulating phase of VO2 to be of the order of few microseconds. The nitride-oxide based p-n heterojunctions provide a new dimension △ Less

Submitted 4 June, 2013; originally announced June 2013.

Journal ref: J. Appl. Phys. 113, 213703 (2013)

Electrical switching dynamics and broadband microwave characteristics of VO2 RF devices

Authors: Sieu D. Ha, You Zhou, Christopher J. Fisher, Shriram Ramanathan, Jacob P. Treadway

Abstract: Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-M… ▽ More Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory dam** to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz. △ Less

Submitted 3 June, 2013; originally announced June 2013.

Journal ref: J. Appl. Phys. 113, 184501 (2013)

Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films

Authors: Sieu D. Ha, Ulrich Vetter, Jian Shi, Shriram Ramanathan

Abstract: The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 °C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed across both insulating and metallic phases with ~25% modulation at room temperature. We… ▽ More The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 °C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed across both insulating and metallic phases with ~25% modulation at room temperature. We show that resistance modulation is predominantly due to electrostatic charge accumulation and not electrochemical do** by control experiments in inert and air en-vironments. We model the resistance behavior and estimate the accumulated sheet density (~1-2 x 10^14 cm^-2) and EDL capacitance (~12 μF/cm^2). △ Less

Submitted 9 May, 2013; originally announced May 2013.

Journal ref: Appl. Phys. Lett. 102, 183102 (2013)

Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism

Authors: Sieu D. Ha, R. Jaramillo, D. M. Silevitch, Frank Schoofs, Kian Kerman, John D. Baniecki, Shriram Ramanathan

Abstract: The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with va… ▽ More The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation. △ Less

Submitted 5 March, 2013; v1 submitted 9 January, 2013; originally announced January 2013.

Comments: *Equally contributing first authors

Journal ref: Phys. Rev. B 87, 125150 (2013)

Correlated Electron Materials and Field Effect Transistors for Logic: A Review

Authors: You Zhou, Shriram Ramanathan

Abstract: Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic do** of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may co… ▽ More Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic do** of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing. △ Less

Submitted 11 December, 2012; originally announced December 2012.

Comments: 60 pages, 12 figures. Accepted for publication in Critical Reviews in Solid State and Materials Sciences. This is author's preprint copy

Journal ref: Critical Reviews in Solid State and Materials Sciences Volume 38, Issue 4, pages 286-317, 2013

Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films

Authors: Sieu D. Ha, Gulgun H. Aydogdu, Shriram Ramanathan

Abstract: The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperat… ▽ More The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically-driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices. △ Less

Submitted 18 January, 2011; originally announced January 2011.

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Authors: Dmitry Ruzmetov, Don Heiman, Bruce B. Claflin, Venkatesh Narayanamurti, Shriram Ramanathan

Abstract: Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electron… ▽ More Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured. △ Less

Submitted 22 June, 2010; originally announced June 2010.

Journal ref: Physical Review B 79, 153107 (2009)

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Authors: Dmitry Ruzmetov, Gokul Gopalakrishnan, Changhyun Ko, Venkatesh Narayanamurti, Shriram Ramanathan

Abstract: Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-te… ▽ More Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-terminal field effect transistor-like devices using thin film VO2 as the channel layer. The gate is separated from the channel through an insulating gate oxide layer, enabling true probing of the field effect with minimal or no interference from large leakage currents flowing directly from the electrode. The influence of the fabrication of multiple components of the device, including the gate oxide deposition, on the VO2 film characteristics is discussed. Further, we discuss the effect of the gate voltage on the device response, point out some of the unusual characteristics including temporal dependence. A reversible unipolar modulation of the channel resistance upon the gate voltage is demonstrated for the first time in optimally engineered devices. The results presented in this work are of relevance towards interpreting gate voltage response in such oxides as well as addressing challenges in advancing gate stack processing for oxide semiconductors. △ Less

Submitted 22 June, 2010; originally announced June 2010.

Journal ref: JOURNAL OF APPLIED PHYSICS 107, 114516 (2010)

Characterization of the Shell Structure in Coupled Quantum Dots through Resonant Optical Probing

Authors: Mauricio Garrido, Kushal C. Wijesundara, Swati Ramanathan, E. A. Stinaff, M. Scheibner, A. S. Bracker, D. Gammon

Abstract: Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial results from photoluminescence excitation studies of excited states in coupled quantum dots (CQDs). Due to the rich set of possible excitation and reco… ▽ More Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial results from photoluminescence excitation studies of excited states in coupled quantum dots (CQDs). Due to the rich set of possible excitation and recombination possibilities, a technique for visualizing photoluminescence excitation in coupled quantum dots is discussed, by which both the interaction between the dots and the type of absorption and emission that generated the photoluminescence is easily and clearly revealed. As an example, this technique is applied to characterize the shell structure of the hole in the top dot and the results are compared with those using Level Anti-Crossing Spectroscopy (LACS). △ Less

Submitted 12 March, 2009; v1 submitted 29 January, 2009; originally announced January 2009.

Comments: 6 pages, 4 figures

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

Authors: Kushal C. Wijesundara, Mauricio Garrido, Swati Ramanathan, E. A. Stinaff, M. Scheibner, A. S. Bracker, D. Gammon

Abstract: Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Polarization dependent photoluminescence (PL) spectra were used to investigate the spin dependent interactions in coupled quantum dot systems and by var… ▽ More Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Polarization dependent photoluminescence (PL) spectra were used to investigate the spin dependent interactions in coupled quantum dot systems and by varying an electric field, the ground state hole energy levels are brought into resonance, resulting in the formation of molecular orbitals observed as anticrossings between the direct and indirect transitions in the spectra. The indirect and direct transitions of the neutral exciton demonstrate high and low circular polarization memory respectively due to variation in the exchange interaction. The ratio between the polarization values as a function of electric field, and the barrier height was measured. These results indicate a possible method of tuning between indirect and direct configurations to control the degree of exchange interaction. △ Less

Submitted 29 January, 2009; originally announced January 2009.

Comments: 6 pages, 3 figures

Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ($VO_{2}$)

Authors: R. G. Mani, S. Ramanathan

Abstract: An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both sides of the structural transition, and (b) a history dependent hysteresis loop in $R$ upon thermal cycling. These features are attributed here to transport th… ▽ More An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both sides of the structural transition, and (b) a history dependent hysteresis loop in $R$ upon thermal cycling. These features are attributed here to transport through a granular network. △ Less

Submitted 5 July, 2007; originally announced July 2007.

Comments: 3 pages, 3 color figures

Chain motion and viscoelasticity in highly entangled solutions of semiflexible rods

Authors: Shriram Ramanathan, David C Morse

Abstract: Brownian dynamics simulations are used to study highly entangled solutions of semiflexible polymers. Bending fluctuations of semiflexible rods are signficantly affected by entanglement only above a concentration $c^{**}$, where $c^{**}\sim 10^{3}L^{-3}$ for chains of similar length $L$ and persistence length. For $c > c^{**}$, the tube radius $R_{e}$ approaches a dependence… ▽ More Brownian dynamics simulations are used to study highly entangled solutions of semiflexible polymers. Bending fluctuations of semiflexible rods are signficantly affected by entanglement only above a concentration $c^{**}$, where $c^{**}\sim 10^{3}L^{-3}$ for chains of similar length $L$ and persistence length. For $c > c^{**}$, the tube radius $R_{e}$ approaches a dependence $R_{e} \propto c^{-3/5}$, and the linear viscoelastic response develops an elastic contribution that is absent for $c < c^{**}$. Experiments on isotropic solutions of $F$-actin span concentrations near $c^{**}$ for which the predicted asymptotic scaling of the plateau modulus $G \propto c^{7/5}$ is not yet valid. △ Less

Submitted 6 February, 2007; originally announced February 2007.

Comments: 4 pages, 5 figures, submitted to PRL

A Brownian dynamics algorithm for entangled wormlike threads

Authors: Shriram Ramanathan, David C Morse

Abstract: We present a hybrid Brownian dynamics / Monte Carlo algorithm for simulating solutions of highly entangled semiflexible polymers or filaments. The algorithm combines a Brownian dynamics time-step** approach with an efficient scheme for rejecting moves that cause chains to cross or that lead to excluded volume overlaps. The algorithm allows simulation of the limit of infinitely thin but uncross… ▽ More We present a hybrid Brownian dynamics / Monte Carlo algorithm for simulating solutions of highly entangled semiflexible polymers or filaments. The algorithm combines a Brownian dynamics time-step** approach with an efficient scheme for rejecting moves that cause chains to cross or that lead to excluded volume overlaps. The algorithm allows simulation of the limit of infinitely thin but uncrossable threads, and is suitable for simulating the conditions obtained in experiments on solutions of long actin protein filaments. △ Less

Submitted 17 October, 2006; originally announced October 2006.

Comments: 31 pages

Dynamics of elastic boundaries

Authors: Sharad Ramanathan, Alexander Lobkovsky

Abstract: We study, both analytically and numerically, the dynamics of elastic boundaries such as crack fronts in fracture and surfaces of contact in solid on solid friction. The elastic waves in the solid give rise to kinks that move with a characteristic velocity along the boundary. As stop** kinks pass through they cause moving parts of the boundary to stop. Starting kinks cause stationary parts of t… ▽ More We study, both analytically and numerically, the dynamics of elastic boundaries such as crack fronts in fracture and surfaces of contact in solid on solid friction. The elastic waves in the solid give rise to kinks that move with a characteristic velocity along the boundary. As stop** kinks pass through they cause moving parts of the boundary to stop. Starting kinks cause stationary parts of the boundary to move. We study the interaction of these kinks with disorder that arises from the spatial variations of the friction constant or fracture energy. In the absence of elastic waves, elastic boundaries with disorder operate at a critical point leading to a power-law distribution of slip events and self-affine boundaries. Elastic waves result in relevant perturbations at this fixed point. Slip events beyond a critical size run away and the velocity of the boundary jumps to a nonzero value when the external load is increased above a threshold. We analyze in detail a class of simple models that capture the essential features of bulk vectorial elasticity and discuss the implications of our results for friction and fracture dynamics. △ Less

Submitted 6 January, 1999; originally announced January 1999.

Onset of Propagation of Planar Cracks in Heterogeneous Media

Authors: Sharad Ramanathan, Daniel S. Fisher

Abstract: The dynamics of planar crack fronts in hetergeneous media near the critical load for onset of crack motion are investigated both analytically and by numerical simulations. Elasticity of the solid leads to long range stress transfer along the crack front which is non-monotonic in time due to the elastic waves in the medium. In the quasistatic limit with instantaneous stress transfer, the crack fr… ▽ More The dynamics of planar crack fronts in hetergeneous media near the critical load for onset of crack motion are investigated both analytically and by numerical simulations. Elasticity of the solid leads to long range stress transfer along the crack front which is non-monotonic in time due to the elastic waves in the medium. In the quasistatic limit with instantaneous stress transfer, the crack front exhibits dynamic critical phenomenon, with a second order like transition from a pinned to a moving phase as the applied load is increased through a critical value. At criticality, the crack-front is self-affine, with a roughness exponent $ζ=0.34\pm 0.02$. The dynamic exponent $z$ is found to be equal to $ 0.74\pm 0.03$ and the correlation length exponent $ν=1.52\pm 0.02$. These results are in good agreement with those obtained from an epsilon expansion. Sound-travel time delays in the stress transfer do not change the static exponents but the dynamic exponent $z$ becomes exactly one. Real elastic waves, however, lead to overshoots in the stresses above their eventual static value when one part of the crack front moves forward. Simplified models of these stress overshoots are used to show that overshoots are relevant at the depinning transition leading to a decrease in the critical load and an apparent jump in the velocity of the crack front directly to a non-zero value. In finite systems, the velocity also shows hysteretic behaviour as a function of the loading. These results suggest a first order like transition. Possible implications for real tensile cracks are discussed. △ Less

Submitted 15 December, 1997; originally announced December 1997.

Comments: 51 pages + 20 figure

Statistics of Earthquakes in Simple Models of Heterogeneous Faults

Authors: Daniel S. Fisher, Karin Dahmen, Sharad Ramanathan, Yehuda Ben-Zion

Abstract: Simple models for ruptures along a heterogeneous earthquake fault zone are studied, focussing on the interplay between the roles of disorder and dynamical effects. A class of models are found to operate naturally at a critical point whose properties yield power law scaling of earthquake statistics. Various dynamical effects can change the behavior to a distribution of small events combined with… ▽ More Simple models for ruptures along a heterogeneous earthquake fault zone are studied, focussing on the interplay between the roles of disorder and dynamical effects. A class of models are found to operate naturally at a critical point whose properties yield power law scaling of earthquake statistics. Various dynamical effects can change the behavior to a distribution of small events combined with characteristic system size events. The studies employ various analytic methods as well as simulations. △ Less

Submitted 3 March, 1997; originally announced March 1997.

Comments: 4 pages, RevTex, 3 figures (eps-files), uses epsf

Dynamics and Instabilities of Planar Tensile Cracks in Heterogeneous Media

Authors: Sharad Ramanathan, Daniel S. Fisher

Abstract: The dynamics of tensile crack fronts restricted to advance in a plane are studied. In an ideal linear elastic medium, a propagating mode along the crack front with a velocity slightly less than the Rayleigh wave velocity, is found to exist. But the dependence of the effective fracture toughness $Γ(v)$ on the crack velocity is shown to destabilize the crack front if $(dΓ)/(dv)<0$. Short wavelengt… ▽ More The dynamics of tensile crack fronts restricted to advance in a plane are studied. In an ideal linear elastic medium, a propagating mode along the crack front with a velocity slightly less than the Rayleigh wave velocity, is found to exist. But the dependence of the effective fracture toughness $Γ(v)$ on the crack velocity is shown to destabilize the crack front if $(dΓ)/(dv)<0$. Short wavelength radiation due to weak random heterogeneities leads to this instability at low velocities. The implications of these results for the crack dynamics are discussed. △ Less

Submitted 23 January, 1997; originally announced January 1997.

Comments: 12 pages

Quasi-static crack propagation in heterogeneous media

Authors: Sharad Ramanathan, Deniz Ertaş, Daniel S. Fisher

Abstract: The dynamics of a single crack moving through a heterogeneous medium is studied in the quasi-static approximation. Equations of motion for the crack front are formulated and the resulting scaling behaviour analyzed. In a model scalar system and for mode III (tearing) cracks, the crack surface is found to be self affine with a roughness exponent of $ζ=1/2$. But in the usual experimental case of m… ▽ More The dynamics of a single crack moving through a heterogeneous medium is studied in the quasi-static approximation. Equations of motion for the crack front are formulated and the resulting scaling behaviour analyzed. In a model scalar system and for mode III (tearing) cracks, the crack surface is found to be self affine with a roughness exponent of $ζ=1/2$. But in the usual experimental case of mode I (tensile) cracks, local mode preference causes the crack surface to be only logarithmically rough, quite unlike those seen in experiments. The effects of residual stresses are considered and found, potentially, to lead to increased crack surface roughness. But it appears likely that elastic wave propagation effects may be needed to explain the very rough crack surfaces observed experimentally. △ Less

Submitted 25 November, 1996; originally announced November 1996.

Comments: 4 pages, 1 fig (eps file)