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MnRhBi3: A Cleavable Antiferromagnetic Metal
Authors:
Eleanor M. Clements,
Dmitry Ovchinnikov,
Parul R. Raghuvanshi,
Valentino R. Cooper,
Satoshi Okamoto,
Andrew D. Christianson,
Joseph A. M. Paddison,
Brenden R. Ortiz,
Stuart Calder,
Andrew F. May,
Xiaodong Xu,
Jiaqiang Yan,
Michael A. McGuire
Abstract:
Cleavable metallic antiferromagnets may be of use for low-dissipation spintronic devices; however, few are currently known. Here we present orthorhombic MnRhBi3 as one such compound and present a thorough study of its physical properties. Exfoliation is demonstrated experimentally, and the cleavage energy and electronic structure are examined by density functional theory calculations. It is conclu…
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Cleavable metallic antiferromagnets may be of use for low-dissipation spintronic devices; however, few are currently known. Here we present orthorhombic MnRhBi3 as one such compound and present a thorough study of its physical properties. Exfoliation is demonstrated experimentally, and the cleavage energy and electronic structure are examined by density functional theory calculations. It is concluded that MnRhBi3 is a van der Waals layered material that cleaves easily between neighboring Bi layers, and that the Bi atoms have lone pairs extending into the van der Waals gaps. A series of four phase transitions are observed below room temperature, and neutron diffraction shows that at least two of the transitions involve the formation of antiferromagnetic order. Anomalous thermal expansion points to a crystallographic phase transition and/or strong magnetoelastic coupling. This work reveals a complex phase evolution in MnRhBi3 and establishes this cleavable antiferromagnetic metal as an interesting material for studying the interplay of structure, magnetism, and transport in the bulk and ultrathin limits as well as the role of lone pair electrons in interface chemistry and proximity effects in van der Waals heterostructures.
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Submitted 30 June, 2024;
originally announced July 2024.
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A strategic high throughput search for identifying stable Li based half Heusler alloys for spintronics applications
Authors:
Rohit Pathak,
Parul R. Raghuvanshi,
Amrita Bhattacharya
Abstract:
In this work, high throughput DFT calculations are performed on the alkali metal-based half Heusler alloys; LiY$_p$Y$^\prime_{1-p}$S (Y, Y$^\prime$ = V, Cr, Mn, Fe, Co, Ni and $\mathit{p}$ = 0, 0.25, 0.5, 0.75, 1). Starting with 243 structural replica, systematic filters are designed to select the energetically and vibrationally favorable compositions by considering the contributions stemming from…
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In this work, high throughput DFT calculations are performed on the alkali metal-based half Heusler alloys; LiY$_p$Y$^\prime_{1-p}$S (Y, Y$^\prime$ = V, Cr, Mn, Fe, Co, Ni and $\mathit{p}$ = 0, 0.25, 0.5, 0.75, 1). Starting with 243 structural replica, systematic filters are designed to select the energetically and vibrationally favorable compositions by considering the contributions stemming from the magnetic alignments of the ions. Thereby, 26 dynamically stable magnetic compositions are identified, of which 10 are found to be ferromagnetic (FM), 4 antiferromagnetic (AFM) and 12 ferrimagnetic (FiM). 4 FM and 8 FiM ones are found to show 100 $\%$ spin polarization. Further, tetragonal distortion is found to be present in 4 FM, 3 FiM and 4 AFM compositions, which indicates the possibility of easy-axis magnetocrystalline anisotropy. The ferromagnetic LiFe$_{0.5}$Mn$_{0.5}$S and antiferromagnetic LiFeS are found to have the most prominent easy-axis magnetocrystalline anisotropy.
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Submitted 22 March, 2022;
originally announced March 2022.
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Self Do** for Synergistically Tuning the Electronic and Thermal Transport Coefficients in n-type Half-Heuslers
Authors:
Parul R. Raghuvanshi,
Dipanwita Bhattacharjee,
Amrita Bhattacharya
Abstract:
Ternary intermetallic half-Heusler (HH) compounds (XYZ) with 18 valence electron count viz. ZrCoSb, ZrNiSn, and ZrPdSn, have revealed promising thermoelectric properties. Exemplarily, it has been experimentally observed that a slight change in the content of Y-site atoms (by ~3-12.5% i.e., m =0.03, 0.125 in ZrY(1+m)Z) leads to drastic lowering in the lattice thermal conductivity (kL) by more than…
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Ternary intermetallic half-Heusler (HH) compounds (XYZ) with 18 valence electron count viz. ZrCoSb, ZrNiSn, and ZrPdSn, have revealed promising thermoelectric properties. Exemplarily, it has been experimentally observed that a slight change in the content of Y-site atoms (by ~3-12.5% i.e., m =0.03, 0.125 in ZrY(1+m)Z) leads to drastic lowering in the lattice thermal conductivity (kL) by more than 65-80% in many of these compounds. The present work aims at exploring the possibility of maximizing the electronic transport scenario after achieving the low kL limit in these compounds. By taking into account the full anharmonicity of the lattice dynamics, Boltzmann transport calculations are performed under the framework of density functional theory. Our results show that these excess atoms present in the vacant lattice site induce scattering by acting either as a rattling mode or by hybridizing with the acoustic modes of the host depending upon their mass and bonding chemistry, respectively. Furthermore, the introduction of these scattering centers may lead to the formation of a defect mid-gap state in the electronic band structure (detrimental for electronic transport) or lead to light do** of the host compound. The latter is found to be particularly conducive for attaining synergy in both thermal as well as electronic transport.
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Submitted 30 October, 2021;
originally announced November 2021.
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A high throughput search of efficient thermoelectric half-Heusler compounds
Authors:
Parul R. Raghuvanshi,
Suman Mondal,
Amrita Bhattacharya
Abstract:
Half-Heusler compounds have emerged as promising thermoelectric materials that offer huge compositional space to tune their thermoelectric performance. A class of stable half Heusler compounds formed from elements of three specific groups in the periodic table viz. X$_{p}$X$'_{1-p}$Y$_{q}$Y$'_{1-q}$Z$_{r}$Z$'_{1-r}$ (with X, X$'$= Ti, Zr, Hf, Y, Y$'$ = Ni, Pd, Pt and Z, Z$'$ = Ge, Sn, Pb and p, q,…
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Half-Heusler compounds have emerged as promising thermoelectric materials that offer huge compositional space to tune their thermoelectric performance. A class of stable half Heusler compounds formed from elements of three specific groups in the periodic table viz. X$_{p}$X$'_{1-p}$Y$_{q}$Y$'_{1-q}$Z$_{r}$Z$'_{1-r}$ (with X, X$'$= Ti, Zr, Hf, Y, Y$'$ = Ni, Pd, Pt and Z, Z$'$ = Ge, Sn, Pb and p, q, r = 0, 0.25, 0.75 and 1) via various stoichiometric isoelectronic elemental substitution at the X, Y and Z sites respectively is investigated. Intelligent filters are employed at each step of our high throughput density functional theory calculations to filter compounds with improved figure of merit. While confirming several known results, the calculations also reveal unknown pathways to improve the thermoelectric performance of the compound class. The 50% X as well as Z site substitution of the parent Heusler individually are found to marginally enhance the power factor for both the $p$- and $n$-type do**, while leading to considerable enhancement in the figure of merit (by $\sim$24 %) specifically due to lowering of the lattice thermal conductivity because of increase in lattice disorder in approximately the same cell volume. Furthermore, the present study confirms the experimental scenario that Y site substitution does not lead to enhancement of the powerfactor because of the breaking of band degeneracies at the high symmetry points. This work will serve as a consolidated cost effective guideline for experimentalist working with this compound class on enhancing the powerfactor and figure of merit of the compositions.
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Submitted 16 November, 2020;
originally announced November 2020.
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Formation and magnetic properties of spark plasma sintered Mn$_{3-δ}$ ($δ$ = 0, 1) alloys
Authors:
Sonam Perween,
A. Rathi,
R. P. Singh,
A. Bhattacharya,
Parul Rani Raghuvanshi,
P. V. Prakash Madduri,
P. K. Rout,
B. Sivaiah,
Ajay Dhar,
R. P. Pant,
B. Gahtori,
G. A. Basheed
Abstract:
We present the synthesis of D0$_{22}$ Mn$_{3 - δ}$Ga ($δ$ = 0, 1) Heusler alloys by Spark Plasma Sintering method. The single phase Mn$_3$Ga (T$_\mathrm{c}$ $\simeq$ 780 K) is synthesized, while Mn$_2$Ga (T$_\mathrm{c}$ $\simeq$ 710 K) is found to coexist with a near-stoichiometric room temperature paramagnetic Mn$_9$Ga$_5$~($\approx$ 15 \%) phase due to its lower formation energy, as confirmed fr…
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We present the synthesis of D0$_{22}$ Mn$_{3 - δ}$Ga ($δ$ = 0, 1) Heusler alloys by Spark Plasma Sintering method. The single phase Mn$_3$Ga (T$_\mathrm{c}$ $\simeq$ 780 K) is synthesized, while Mn$_2$Ga (T$_\mathrm{c}$ $\simeq$ 710 K) is found to coexist with a near-stoichiometric room temperature paramagnetic Mn$_9$Ga$_5$~($\approx$ 15 \%) phase due to its lower formation energy, as confirmed from our density functional theory (DFT) calculations. The alloys show hard magnetic behavior with large room temperature spontaneous magnetization m$_s$(80 kOe) = 1.63 (0.83) $μ_\mathrm{B}$/f.u. and coercivity H$_\mathrm{c}$ = 4.28 (3.35) kOe for Mn$_3$Ga (Mn$_2$Ga). The magnetic properties are further investigated till T$_\mathrm{c}$ and the H$_\mathrm{c}$ (T) analysis by Stoner-Wohlfarth model shows the nucleation mechanism for the magnetization reversal. The experimental results are well supported by DFT calculations, which reveal that the ground state of D0$_{22}$ Mn$_2$Ga is achieved by the removal of Mn-atoms from full Heusler Mn$_3$Ga structure in accordance with half Heusler alloy picture.
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Submitted 12 November, 2019;
originally announced November 2019.
