Self-assembling of multilayered polymorphs with ion beams
Authors:
Alexander Azarov,
Cristian Radu,
Augustinas Galeckas,
Ionel Florinel Mercioniu,
Adrian Cernescu,
Vishnukanthan Venkatachalapathy,
Edouard Monakhov,
Flyura Djurabekova,
Corneliu Ghica,
Junlei Zhao,
Andrej Kuznetsov
Abstract:
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallizatio…
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Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; e.g. opting for step-like changes of temperature and/or pressure correlated with switching from one polymorph to another during synthesis is tricky, since it may cause degradation of the structural quality. In the present work, applying the disorder-induced ordering approach we fabricated such multilayered polymorph structures using ion beams. We show that during ion irradiation of gallium oxide, the dynamic annealing of disorder may be tuned towards self-assembling of several polymorph interfaces, consistently with theoretical modelling. Specifically, we demonstrated multilayers with two polymorph interface repetitions obtained in one ion beam assisted fabrication step. Importantly, single crystal structure of the polymorphs was maintained in between interfaces exhibiting repeatable crystallographic relationships, correlating with optical cross-sectional maps. This data paves the way for enhancing functionalities in materials with not previously thought capabilities of ion beam technology.
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Submitted 30 April, 2024;
originally announced April 2024.
Floquet topological transitions in 2D Su-Schrieffer-Heeger model: interplay between time reversal symmetry breaking and dimerization
Authors:
Adrian Pena,
Bogdan Ostahie,
Cristian Radu
Abstract:
We theoretically study the 2D Su-Schrieffer-Heeger model in the context of Floquet topological insulators (FTIs). FTIs are systems which undergo topological phase transitions, governed by Chern numbers, as a result of time reversal symmetry (TRS) breaking by a time periodic process. In our proposed model, the condition of TRS breaking is achieved by circularly polarized light irradiation. We analy…
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We theoretically study the 2D Su-Schrieffer-Heeger model in the context of Floquet topological insulators (FTIs). FTIs are systems which undergo topological phase transitions, governed by Chern numbers, as a result of time reversal symmetry (TRS) breaking by a time periodic process. In our proposed model, the condition of TRS breaking is achieved by circularly polarized light irradiation. We analytically show that TRS breaking is forbidden in the absence of second order neighbors hop**. In the absence of light irradiation, we identify a symmetry-protected degeneracy and prove the appearance of a flat band along a specific direction in the momentum space. Furthermore, we employ a novel method to show that the four unit cell atoms, in the absence of irradiation, can be interpreted as conserved spin states. With the breaking of TRS via light irradiation, these spin states are no longer conserved, leading to the emergence of chiral edge states. We also show how the interplay between the TRS breaking and dimerization leads to a complex phase diagram. The validity of our findings is substantiated through Chern numbers, spectral properties, localization of chiral edge states and simulations of quantum Hall transport. Our model is suitable not only for condensed matter (materials), but also for cold gases trapped in optical lattices or electric circuits.
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Submitted 3 April, 2024;
originally announced April 2024.
