Showing 1–2 of 2 results for author: Radchenko, I
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Tailoring electronic properties of multilayer phosphorene by siliconization
Authors:
Oleksandr I. Malyi,
Kostiantyn V. Sopiha,
Ihor Radchenko,
** Wu,
Clas Persson
Abstract:
Controlling a thickness dependence of electronic properties for two-dimensional (2d) materials is among primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si interaction with multilayer phosphorene (2d-P) can result in the formation of highly stable 2d-SiP and 2d-SiP$_2$ compounds with a weak interlayer interaction. Our an…
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Controlling a thickness dependence of electronic properties for two-dimensional (2d) materials is among primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si interaction with multilayer phosphorene (2d-P) can result in the formation of highly stable 2d-SiP and 2d-SiP$_2$ compounds with a weak interlayer interaction. Our analysis demonstrates that these systems are semiconductors with band gap energies that can be governed by varying the thickness and stacking order. Specifically, siliconization of phosphorene allows to design 2d-SiP$_x$ materials with significantly weaker thickness dependence of electronic properties than that in 2d-P and to develop ways for their tailoring. We also reveal the spatial dependence of electronic properties for 2d-SiP$_x$ highlighting difference in effective band gaps for different layers. Particularly, our results show that central layers in the multilayer 2d systems determine overall electronic properties, while the role of the outermost layers is noticeably smaller.
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Submitted 4 December, 2017; v1 submitted 22 October, 2017;
originally announced October 2017.
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A crystal cleavage mechanism for UHV STM
Authors:
A. I. Oreshkin,
D. A. Muzychenko,
I. V. Radchenko,
V. N. Mantsevich,
V. I. Panov,
S. I. Oreshkin
Abstract:
A device for UHV cleavage of crystal specimens for the use with STM has been suggested and developed. We present a device suitable for the precise cleavage of semiconductors. The device needs only small space and can be easily mounted in a small and compact UHV chamber equipped with a wobble stick manipulator. In order to prove the technique UHV STM measurements on InAs(110) surfaces with differ…
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A device for UHV cleavage of crystal specimens for the use with STM has been suggested and developed. We present a device suitable for the precise cleavage of semiconductors. The device needs only small space and can be easily mounted in a small and compact UHV chamber equipped with a wobble stick manipulator. In order to prove the technique UHV STM measurements on InAs(110) surfaces with different bulk conductivities (p-and n-type) have been performed.
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Submitted 14 October, 2008;
originally announced October 2008.
