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Hydrogen is not necessary for superconductivity in topotactically reduced nickelates
Authors:
Purnima P. Balakrishnan,
Dan Ferenc Segedin,
Lin Er Chow,
P. Quarterman,
Shin Muramoto,
Mythili Surendran,
Ranjan K. Patel,
Harrison LaBollita,
Grace A. Pan,
Qi Song,
Yang Zhang,
Ismail El Baggari,
Koushik Jagadish,
Yu-Tsun Shao,
Berit H. Goodge,
Lena F. Kourkoutis,
Srimanta Middey,
Antia S. Botana,
Jayakanth Ravichandran,
A. Ariando,
Julia A. Mundy,
Alexander J. Grutter
Abstract:
A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a to…
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A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a topotactic reaction with a strongly reducing agent such as CaH$_2$. Recent studies, both experimental and theoretical, have introduced the possibility that the incorporation of hydrogen from the reducing agent into the nickelate lattice may be critical for the superconductivity. In this work, we use secondary ion mass spectrometry to examine superconducting La$_{1-x}$X$_x$NiO$_2$ / SrTiO$_3$ (X = Ca and Sr) and Nd$_6$Ni$_5$O$_{12}$ / NdGaO$_3$ films, along with non-superconducting NdNiO$_2$ / SrTiO$_3$ and (Nd,Sr)NiO$_2$ / SrTiO$_3$. We find no evidence for extensive hydrogen incorporation across a broad range of samples, including both superconducting and non-superconducting films. Theoretical calculations indicate that hydrogen incorporation is broadly energetically unfavorable in these systems, supporting our conclusion that hydrogen incorporation is not generally required to achieve a superconducting state in layered square-planar nickelates.
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Submitted 4 March, 2024;
originally announced March 2024.
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First-order phase transition vs. spin-state quantum-critical scenarios in strain-tuned epitaxial cobaltite thin films
Authors:
J. E. Dewey,
V. Chaturvedi,
T. A. Webb,
P. Sharma,
W. M. Postiglione,
P. Quarterman,
P. P. Balakrishnan,
B. J. Kirby,
L. Figari,
C. Korostynski,
A. Jacobson,
T. Birol,
R. M. Fernandes,
A. N. Pasupathy,
C. Leighton
Abstract:
Pr-containing perovskite cobaltites exhibit unusual valence transitions, coupled to coincident structural, spin-state, and metal-insulator transitions. Heteroepitaxial strain was recently used to control these phenomena in the model (Pr$_{1-y}$Y$_y$)$_{1-x}$Ca$_x$CoO$_{3-δ}$ system, stabilizing a nonmagnetic insulating phase under compression (with a room-temperature valence/spin-state/metal-insul…
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Pr-containing perovskite cobaltites exhibit unusual valence transitions, coupled to coincident structural, spin-state, and metal-insulator transitions. Heteroepitaxial strain was recently used to control these phenomena in the model (Pr$_{1-y}$Y$_y$)$_{1-x}$Ca$_x$CoO$_{3-δ}$ system, stabilizing a nonmagnetic insulating phase under compression (with a room-temperature valence/spin-state/metal-insulator transition) and a ferromagnetic metallic phase under tension, thus exposing a potential spin-state quantum critical point. The latter has been proposed in cobaltites and can be probed in this system as a function of a disorder-free variable (strain). We study this here via thickness-dependent strain relaxation in compressive SrLaAlO$_4$(001)/(Pr$_{0.85}$Y$_{0.15}$)$_{0.70}$Ca$_{0.30}$CoO$_{3-δ}$ epitaxial thin films to quasi-continuously probe structural, electronic, and magnetic behaviors across the nonmagnetic-insulator/ferromagnetic-metal boundary. High-resolution X-ray diffraction, electronic transport, magnetometry, polarized neutron reflectometry, and temperature-dependent magnetic force microscopy provide a detailed picture, including abundant evidence of temperature- and strain-dependent phase coexistence. This indicates a first-order phase transition as opposed to spin-state quantum-critical behavior, which we discuss theoretically via a phenomenological Landau model for coupled spin-state and magnetic phase transitions.
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Submitted 10 November, 2023;
originally announced November 2023.
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Nitrogen-Based Magneto-Ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures
Authors:
Christopher J. Jensen,
Alberto Quintana,
Patrick Quarterman,
Alexander J. Grutter,
Purnima P. Balakrishnan,
Huairuo Zhang,
Albert V. Davydov,
Xixiang Zhang,
Kai Liu
Abstract:
Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an a…
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Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an approach that combines the chemically induced magneto-ionic effect with the electric field driving of nitrogen in the Ta/Co$_{0.7}$Fe$_{0.3}$/MnN/Ta structure to electrically manipulate exchange bias. Upon field-cooling the heterostructure, ionic diffusion of nitrogen from MnN into the Ta layers occurs. A significant exchange bias of 618 Oe at 300 K and 1484 Oe at 10 K is observed, which can be further enhanced after a voltage conditioning by 5% and 19%, respectively. This enhancement can be reversed by voltage conditioning with an opposite polarity. Nitrogen migration within the MnN layer and into the Ta cap** layer cause the enhancement in exchange bias, which is observed in polarized neutron reflectometry studies. These results demonstrate an effective nitrogen-ion based magneto-ionic manipulation of exchange bias in solid-state devices.
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Submitted 25 March, 2023;
originally announced March 2023.
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Absence of magnetic interactions in Ni-Nb ferromagnet-superconductor bilayers
Authors:
Nathan Satchell,
P. Quarterman,
J. A. Borchers,
Gavin Burnell,
Norman O. Birge
Abstract:
Studies of ferromagnet-superconductor hybrid systems have uncovered magnetic interactions between the competing electronic orderings. The electromagnetic (EM) proximity effect predicts the formation of a spontaneous vector potential inside a superconductor placed in proximity to a ferromagnet. In this work, we use a Nb superconducting layer and Ni ferromagnetic layer to test for such magnetic inte…
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Studies of ferromagnet-superconductor hybrid systems have uncovered magnetic interactions between the competing electronic orderings. The electromagnetic (EM) proximity effect predicts the formation of a spontaneous vector potential inside a superconductor placed in proximity to a ferromagnet. In this work, we use a Nb superconducting layer and Ni ferromagnetic layer to test for such magnetic interactions. We use the complementary, but independent, techniques of polarised neutron reflectometry and detection Josephson junctions to probe the magnetic response inside the superconducting layer at close to zero applied field. In this condition, Meissner screening is negligible, so our measurements examine only additional magnetic and screening contributions from proximity effects. We report the absence of any signals originating from EM proximity effect in zero applied field. Our observations indicate that either EM proximity effect is below the detection resolution of both of our experiments or may indicate a new phenomenon that requires extension of current theory. From our measurements, we estimate a limit of the size of the zero field EM proximity effect in our Ni-Nb samples to be $\pm0.27$ mT.
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Submitted 15 February, 2023; v1 submitted 30 September, 2022;
originally announced September 2022.
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Exchange-biased quantum anomalous Hall effect
Authors:
Peng Zhang,
Purnima P. Balakrishnan,
Christopher Eckberg,
Peng Deng,
Tomohiro Nozaki,
Sukong Chong,
Patrick Quarterman,
Megan E. Holtz,
Brian B. Maranville,
Lei Pan,
Eve Emmanouilidou,
Ni Ni,
Masashi Sahashi,
Alexander Grutter,
Kang L. Wang
Abstract:
The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,S…
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The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr2O3. Through polarized neutron reflectometry (PNR), we find a strong exchange coupling between CBST and Al-Cr2O3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. We further demonstrate that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr2O3 layer. Our work demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.
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Submitted 7 May, 2022;
originally announced May 2022.
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Room-Temperature Valence Transition in a Strain-Tuned Perovskite Oxide
Authors:
Vipul Chaturvedi,
Supriya Ghosh,
Dominique Gautreau,
William M. Postiglione,
John E. Dewey,
Patrick Quarterman,
Purnima P. Balakrishnan,
Brian J. Kirby,
Hua Zhou,
Huikai Cheng,
Amanda Huon,
Timothy Charlton,
Michael R. Fitzsimmons,
Caroline Korostynski,
Andrew Jacobson,
Lucca Figari,
Javier Garcia Barriocanal,
Turan Birol,
K. Andre Mkhoyan,
Chris Leighton
Abstract:
Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transitio…
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Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). Here, we show that in thin films of the complex perovskite (Pr1-yYy)1-xCaxCoO3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.
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Submitted 9 June, 2022; v1 submitted 20 December, 2021;
originally announced December 2021.
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Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices
Authors:
Peng Chen,
Qi Yao,
Qiang Sun,
Alexander J. Grutter,
P. Quarterman,
Purnima P. Balakrishnan,
Christy J. Kinane,
Andrew J. Caruana,
Sean Langridge,
Baoshan Cui,
Lun Li,
Yuchen Ji,
Yong Zhang,
Zhongkai Liu,
** Zou,
Guoqiang Yu,
Yumeng Yang,
Xufeng Kou
Abstract:
The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic i…
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The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic interlayer coupling among the MBT layers through the exchange spring effect at the MBT/MnTe hetero-interfaces. Moreover, the precise control of the MnTe thickness enables the modulation of relative strengths among the constituent magnetic orders, leading to tunable magnetoelectric responses, while the superlattice periodicity serves as an additional tuning parameter to tailor the spin configurations of the synthesized multi-layers. Our results demonstrate the advantages of superlattice engineering for optimizing the magnetic interactions in MBT-family systems, and the ferromagnet-intercalated strategy opens up new avenues in magnetic topological insulator structural design and spintronic applications.
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Submitted 8 December, 2021;
originally announced December 2021.
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Spin and charge interconversion in Dirac semimetal thin films
Authors:
Wilson Yanez,
Yongxi Ou,
Run Xiao,
Jahyun Koo,
Jacob T. Held,
Supriya Ghosh,
Jeffrey Rable,
Timothy Pillsbury,
Enrique Gonzalez Delgado,
Kezhou Yang,
Juan Chamorro,
Alexander J. Grutter,
Patrick Quarterman,
Anthony Richardella,
Abhronil Sengupta,
Tyrel McQueen,
Julie A. Borchers,
K. Andre Mkhoyan,
Binghai Yan,
Nitin Samarth
Abstract:
We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pum**. Analysis of the symmetric and anti-symmetric compone…
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We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pum**. Analysis of the symmetric and anti-symmetric components of the mixing voltage in spin torque ferromagnetic resonance and the frequency and power dependence of the spin pum** signal show that the behavior of these processes is consistent with previously reported spin-charge interconversion mechanisms in heavy metals, topological insulators, and Weyl semimetals. We find that the efficiency of spin-charge interconversion in Cd3As2/permalloy bilayers can be comparable to that in heavy metals. We discuss the underlying mechanisms by comparing our results with first principles calculations.
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Submitted 28 February, 2021;
originally announced March 2021.
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Observation of anti-dam** spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
Authors:
Mahendra DC,
Ding-Fu Shao,
Vincent D. -H. Hou,
P. Quarterman,
Ali Habiboglu,
Brooks Venuti,
Masashi Miura,
Brian Kirby,
Arturas Vailionis,
Chong Bi,
Xiang Li,
Fen Xue,
Yen-Lin Huang,
Yong Deng,
Shy-Jay Lin,
Wilman Tsai,
Serena Eley,
Weigang Wang,
Julie A. Borchers,
Evgeny Y. Tsymbal,
Shan X. Wang
Abstract:
High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic…
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High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic fields. However, an external magnetic field is required to switch the magnetization along x and z-axes via SOT generated by y-spin polarization. Here, we present that the above limitation can be circumvented by unconventional SOT in magnetron-sputtered thin film MnPd3. In addition to the conventional in-plane anti-dam**-like torque due to the y-spin polarization, out-of-plane and in-plane anti-dam**-like torques originating from z-spin and x-spin polarizations, respectively have been observed at room temperature. The spin torque efficiency corresponding to the y-spin polarization from MnPd3 thin films grown on thermally oxidized silicon substrate and post annealed at 400 Deg C is 0.34 - 0.44. Remarkably, we have demonstrated complete external magnetic field-free switching of perpendicular Co layer via unconventional out-of-plane anti-dam**-like torque from z-spin polarization. Based on the density functional theory calculations, we determine that the observed x- and z- spin polarizations with the in-plane charge current are due to the low symmetry of the (114) oriented MnPd3 thin films. Taken together, the new material reported here provides a path to realize a practical spin channel in ultrafast magnetic memory and logic devices.
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Submitted 16 December, 2020;
originally announced December 2020.
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Manipulation of coupling and magnon transport in magnetic metal-insulator hybrid structures
Authors:
Yabin Fan,
Patrick Quarterman,
Joseph Finley,
Jiahao Han,
Pengxiang Zhang,
Justin T. Hou,
Mark D. Stiles,
Alexander J. Grutter,
Luqiao Liu
Abstract:
Ferromagnetic metals and insulators are widely used for generation, control and detection of magnon spin signals. Most magnonic structures are based primarily on either magnetic insulators or ferromagnetic metals, while heterostructures integrating both of them are less explored. Here, by introducing a Pt/yttrium iron garnet (YIG)/permalloy (Py) hybrid structure grown on Si substrate, we studied t…
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Ferromagnetic metals and insulators are widely used for generation, control and detection of magnon spin signals. Most magnonic structures are based primarily on either magnetic insulators or ferromagnetic metals, while heterostructures integrating both of them are less explored. Here, by introducing a Pt/yttrium iron garnet (YIG)/permalloy (Py) hybrid structure grown on Si substrate, we studied the magnetic coupling and magnon transmission across the interface of the two magnetic layers. We found that within this structure, Py and YIG exhibit an antiferromagnetic coupling field as strong as 150 mT, as evidenced by both the vibrating-sample magnetometry and polarized neutron reflectometry measurements. By controlling individual layer thicknesses and external fields, we realize parallel and antiparallel magnetization configurations, which are further utilized to control the magnon current transmission. We show that a magnon spin valve with an ON/OFF ratio of ~130% can be realized out of this multilayer structure at room temperature through both spin pum** and spin Seebeck effect experiments. Thanks to the efficient control of magnon current and the compatibility with Si technology, the Pt/YIG/Py hybrid structure could potentially find applications in magnon-based logic and memory devices.
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Submitted 19 February, 2020;
originally announced February 2020.
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Distortions to the penetration depth and coherence length of superconductor/normal-metal superlattices
Authors:
P. Quarterman,
Nathan Satchell,
B. J. Kirby,
Reza Loloee,
Gavin Burnell,
Norman O. Birge,
J. A. Borchers
Abstract:
Superconducting ($S$) thin film superlattices composed of Nb and a normal metal spacer ($N$) have been extensively utilized in Josephson junctions given their favorable surface roughness compared to Nb films of comparable thickness. In this work, we characterize the London penetration depth and Ginzburg-Landau coherence lengths of $S/N$ superlattices using polarized neutron reflectometry and elect…
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Superconducting ($S$) thin film superlattices composed of Nb and a normal metal spacer ($N$) have been extensively utilized in Josephson junctions given their favorable surface roughness compared to Nb films of comparable thickness. In this work, we characterize the London penetration depth and Ginzburg-Landau coherence lengths of $S/N$ superlattices using polarized neutron reflectometry and electrical transport. Despite the normal metal spacer layers being only approximately 8% of the total superlattice thickness, we surprisingly find that the introduction of these thin $N$ spacers between $S$ layers leads to a dramatic increase in the measured London penetration depth compared to that of a single Nb film of comparable thickness. Using the measured values for the effective in- and out-of-plane coherence lengths, we quantify the induced anisotropy of the superlattice samples and compare to a single Nb film sample. From these results, we find that that the superlattices behave similarly to layered 2D superconductors.
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Submitted 9 July, 2020; v1 submitted 25 January, 2020;
originally announced January 2020.
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Ferromagnetic van der Waals compound MnSb$_{1.8}$Bi$_{0.2}$Te$_4$
Authors:
Yangyang Chen,
Ya-Wen Chuang,
Seng Huat Lee,
Yanglin Zhu,
Kevin Honz,
Yingdong Guan,
Yu Wang,
Ke Wang,
Zhiqiang Mao,
Colin Heikes,
P. Quarterman,
Pawel Zajdel,
Julie A. Borchers,
William Ratcliff II,
Jun Zhu
Abstract:
The intersection of topology and magnetism represents a new playground to discover novel quantum phenomena and device concepts. In this work, we show that a van der Waals compound MnSb$_{1.8}$Bi$_{0.2}$Te$_4$ exhibits a ferromagnetic ground state with a Curie temperature of 26 K, in contrast to the antiferromagnetic order previously found for other members of the Mn(Sb, Bi)$_2$Te$_4$ family. We em…
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The intersection of topology and magnetism represents a new playground to discover novel quantum phenomena and device concepts. In this work, we show that a van der Waals compound MnSb$_{1.8}$Bi$_{0.2}$Te$_4$ exhibits a ferromagnetic ground state with a Curie temperature of 26 K, in contrast to the antiferromagnetic order previously found for other members of the Mn(Sb, Bi)$_2$Te$_4$ family. We employ magneto-transport, bulk magnetization and neutron scattering studies to illustrate the magnetic and electrical properties of MnSb$_{1.8}$Bi$_{0.2}$Te$_4$ and report on the observation of an unusual anomalous Hall effect. Our results are an important step in the synthesis and understanding of ferromagnetic topological insulators.
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Submitted 28 October, 2019;
originally announced October 2019.
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Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material
Authors:
Mahendra DC,
Mahdi Jamali,
Jun-Yang Chen,
Danielle Reifsnyder Hickey,
Delin Zhang,
Zhengyang Zhao,
Hongshi Li,
P. Quarterman,
Yang Lv,
Mo Li,
K. Andre Mkhoyan,
Jian-** Wang
Abstract:
The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is…
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The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.
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Submitted 10 March, 2017;
originally announced March 2017.
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Spin Triplet Supercurrent in Co/Ni Multilayer Josephson Junctions with Perpendicular Anisotropy
Authors:
E. C. Gingrich,
P. Quarterman,
Y. Wang,
R. Loloee,
W. P. Pratt Jr,
N. O. Birge
Abstract:
We have measured spin-triplet supercurrent in Josephson junctions of the form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer with in-plane magnetization, and F is a Ni/[Co/Ni]n multilayer with out-of-plane magnetization. The supercurrent in these junctions decays very slowly with F-layer thickness, and is much larger than in similar junctions not containing the two F' layers. Th…
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We have measured spin-triplet supercurrent in Josephson junctions of the form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer with in-plane magnetization, and F is a Ni/[Co/Ni]n multilayer with out-of-plane magnetization. The supercurrent in these junctions decays very slowly with F-layer thickness, and is much larger than in similar junctions not containing the two F' layers. Those two features are the characteristic signatures of spin-triplet supercurrent, which is maximized by the orthogonality of the magnetizations in the F and F' layers. Magnetic measurements confirm the out-of-plane anisotropy of the Co/Ni multilayers. These samples have their critical current optimized in the as-prepared state, which will be useful for future applications.
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Submitted 15 August, 2012;
originally announced August 2012.
