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Dynamical Geometry of the Haldane Model under a Quantum Quench
Authors:
Liwei Qiu,
Lih-King Lim,
Xin Wan
Abstract:
We explore the time evolution of a topological system when the system undergoes a sudden quantum quench within the same nontrivial phase. Using Haldane's honeycomb model as an example, we show that equilibrium states in a topological phase can be distinguished by geometrical features, such as the characteristic momentum at which the half-occupied edge modes cross, the associated edge-mode velocity…
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We explore the time evolution of a topological system when the system undergoes a sudden quantum quench within the same nontrivial phase. Using Haldane's honeycomb model as an example, we show that equilibrium states in a topological phase can be distinguished by geometrical features, such as the characteristic momentum at which the half-occupied edge modes cross, the associated edge-mode velocity, and the winding vector about which the normalized pseudospin magnetic field winds along a great circle on the Bloch sphere. We generalize these geometrical quantities for non-equilibrium states and use them to visualize the quench dynamics of the topological system. In general, we find the pre-quench equilibrium state relaxes to the post-quench equilibrium state in an oscillatory fashion, whose amplitude decay as $t^{1/2}$. In the process, however, the characteristic winding vector of the non-equilibrium system can evolve to regimes that are not reachable with equilibrium states.
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Submitted 20 May, 2024;
originally announced May 2024.
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Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics
Authors:
Bosai Lyu,
Jiajun Chen,
Sen Wang,
Shuo Lou,
Peiyue Shen,
**gxu Xie,
Lu Qiu,
Izaac Mitchell,
Can Li,
Cheng Hu,
Xianliang Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoqun Wang,
**feng Jia,
Qi Liang,
Guorui Chen,
Tingxin Li,
Shiyong Wang,
Wengen Ouyang,
Oded Hod,
Feng Ding,
Michael Urbakh,
Zhiwen Shi
Abstract:
Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unsca…
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Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unscalable. Here, we report on the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) within h-BN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow ( < 5 nm), and homochiral with zigzag edges. Our atomistic simulations reveal that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA'-stacked h-BN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600 $cm^{2} V^{-1} s^{-1}$ and on-off ratios of up to $10^{6}$. This paves the way to the bottom-up fabrication of high-performance electronic devices based on embedded layered materials.
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Submitted 18 March, 2024;
originally announced March 2024.
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Switching intrinsic magnetic skyrmions with controllable magnetic anisotropy in van der Waals multiferroic heterostructures
Authors:
Ze-quan Wang,
Feng Xue,
Liang Qiu,
Zhe Wang,
Ruqian Wu,
Yusheng Hou
Abstract:
Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic…
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Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic states can be achieved in two-dimensional van der Waals (vdW) multiferroic heterostructure CrSeI/In2Te3 by reversing the ferroelectric polarization of In2Te3. The core mechanism of this switching is traced to the controllable magnetic anisotropy of CrSeI influenced by the ferroelectric polarization of In2Te3. We propose a useful descriptor linking the presence of magnetic skyrmions to magnetic parameters, and validate this connection through studies of a variety of similar vdW multiferroic heterostructures. Our work demonstrates that manipulating magnetic skyrmions via tunable magnetic anisotropies in vdW multiferroic heterostructures represents a highly promising and energy-efficient strategy for future development of spintronics.
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Submitted 8 March, 2024;
originally announced March 2024.
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Mechanics and wrinkling patterns of pressurized bent tubes
Authors:
Cesar L. Pastrana,
Luyi Qiu,
John W. Hutchinson,
Ariel Amir,
Ulrich Gerland
Abstract:
Take a drinking straw and bend it from its ends. After sufficient bending, the tube buckles forming a kink, where the curvature is localized in a very small area. This instability, known generally as the Brazier effect, is inherent to thin-walled cylindrical shells, which are particularly ubiquitous in living systems, such as rod-shaped bacteria. However, tubular biological structures are often pr…
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Take a drinking straw and bend it from its ends. After sufficient bending, the tube buckles forming a kink, where the curvature is localized in a very small area. This instability, known generally as the Brazier effect, is inherent to thin-walled cylindrical shells, which are particularly ubiquitous in living systems, such as rod-shaped bacteria. However, tubular biological structures are often pressurized, and the knowledge of the mechanical response upon bending in this scenario is limited. In this work, we use a computational model to study the mechanical response and the deformations as a result of bending pressurized tubes. In addition, we employ tension-field theory to describe the mechanical behaviour before and after the wrinkling transition. Furthermore, we investigate the development and evolution of wrinkle patterns beyond the instability, showing different wrinkled configurations. We discover the existence of a multi-wavelength mode following the purely sinusoidal wrinkles and anticipating the kinked configuration of the tube.
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Submitted 10 April, 2024; v1 submitted 26 February, 2024;
originally announced February 2024.
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Hund's coupling driven interorbital entanglement in orbital-selective Mott phase
Authors:
Yuekun Niu,
Yu Ni,
Haishan Zhang,
Liang Qiu,
Jianli Wang,
Leiming Chen,
Yun Song,
Shi** Feng
Abstract:
We examine the orbital-selective Mott transition in the non-hybridized two-band Hubbard model using the dynamical mean-field theory. We find that the orbital-selective Mott transition could be depicted by the local quantum state fidelity. Additionally, within the orbital-selective Mott phase, the combined characteristics of the two orbitals lead to the presence of interorbital entanglement, which…
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We examine the orbital-selective Mott transition in the non-hybridized two-band Hubbard model using the dynamical mean-field theory. We find that the orbital-selective Mott transition could be depicted by the local quantum state fidelity. Additionally, within the orbital-selective Mott phase, the combined characteristics of the two orbitals lead to the presence of interorbital entanglement, which is characterized by the non-semi-integer values of local quantum state fidelity. It is demonstrated that this entanglement is driven by transverse Hund's coupling, and the mechanisms underlying the orbital-selective Mott transition show prominent variations depending on the presence or absence of Hund's coupling and its transverse terms.
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Submitted 10 December, 2023;
originally announced December 2023.
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Electrical contact properties between Yb and few-layer WS$_2$
Authors:
Shihao Ju,
Lipeng Qiu,
Jian Zhou,
Binxi Liang,
Wenfeng Wang,
Taotao Li,
Jian Chen,
Xinran Wang,
Yi Shi,
Songlin Li
Abstract:
Charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not well understood. Here, low-work-function metal ytterbium (Yb) was employed as contacts for tungsten disulfide (WS$_2$) to understand the realistic injection mechanism. The contact properties in WS$_2$ with variable tempe…
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Charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not well understood. Here, low-work-function metal ytterbium (Yb) was employed as contacts for tungsten disulfide (WS$_2$) to understand the realistic injection mechanism. The contact properties in WS$_2$ with variable temperature (T) and channel thickness (tch) were synergetically characterized. It is found that the Yb/WS$_2$ interfaces exhibit a strong pinning effect between energy levels and a low contact resistance ($R_\rm{C}$) value down to $5\,kΩ\cdotμ$m. Cryogenic electrical measurements reveal that $R_\rm{C}$ exhibits weakly positive dependence on T till 77 K, as well as a weakly negative correlation with tch. In contrast to the non-negligible $R_\rm{C}$ values extracted, an unexpectedly low effective thermal injection barrier of 36 meV is estimated, indicating the presence of significant tunneling injection in subthreshold regime and the inapplicability of the pure thermionic emission model to estimate the height of injection barrier.
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Submitted 24 June, 2023;
originally announced June 2023.
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Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics
Authors:
Ning Xu,
Xudong Pei,
Lipeng Qiu,
Li Zhan,
Peng Wang,
Yi Shi,
Songlin Li
Abstract:
Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain completely uniform monolayer semiconductor wafers free of over-grown islands. Here, we report the observation of the energy funneling effect and ambient photodelamination phenomenon in inhomogeneous few-layer WS$_2$ flakes under…
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Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain completely uniform monolayer semiconductor wafers free of over-grown islands. Here, we report the observation of the energy funneling effect and ambient photodelamination phenomenon in inhomogeneous few-layer WS$_2$ flakes under low illumination fluencies down to several nW/$μ$m$^{2}$ and its potential as a non-invasive post-etching strategy for selectively strip** the local excessive overlying islands. Photoluminescent tracking on the photoetching traces reveals relatively fast etching rates around $0.3-0.8\,μ$m/min at varied temperatures and an activation energy of $1.7\,$eV. By using crystallographic and electronic characterization, we also confirm the non-invasive nature of the low-power photodelamination and the highly preserved lattice quality in the as-etched monolayer products, featuring a comparable average density of atomic defects (ca.$4.2\times 10^{13}\,$cm$^{-2}$) to pristine flakes and a high electron mobility up to $80\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$) at room temperature. This approach opens a non-invasive photoetching route for thickness uniformity management in 2D van der Waals semiconductor wafers for electronic applications.
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Submitted 24 June, 2023;
originally announced June 2023.
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Interplay of trapped species and absence of electron capture in Moiré heterobilayers
Authors:
Arnab Barman Ray,
Arunabh Mukherjee,
Liangyu Qiu,
Renee Sailus,
Sefaattin Tongay,
Anthony Nickolas Vamivakas
Abstract:
Moiré heterobilayers host interlayer excitons in a natural, periodic array of trap** potentials. Recent work has elucidated the structure of the trapped interlayer excitons and the nature of photoluminescence (PL) from trapped and itinerant charged complexes such as interlayer trions in these structures. In this paper, our results serve to add to the understanding of the nature of PL emission an…
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Moiré heterobilayers host interlayer excitons in a natural, periodic array of trap** potentials. Recent work has elucidated the structure of the trapped interlayer excitons and the nature of photoluminescence (PL) from trapped and itinerant charged complexes such as interlayer trions in these structures. In this paper, our results serve to add to the understanding of the nature of PL emission and explain its characteristic blueshift with increasing carrier density, along with demonstrating a significant difference between the interlayer exciton-trion conversion efficiency as compared to both localized and itinerant intra-layer species in conventional monolayers. Our results show the absence of optical generation of trions in these materials, which we suggest arises from the highly localized, near sub-nm confinement of trapped species in these Moiré potentials.
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Submitted 28 March, 2023;
originally announced March 2023.
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Electrically tunable Gilbert dam** in van der Waals heterostructures of two-dimensional ferromagnetic metals and ferroelectrics
Authors:
Liang Qiu,
Zequan Wang,
Xiao-Sheng Ni,
Dao-Xin Yao,
Yusheng Hou
Abstract:
Tuning the Gilbert dam** of ferromagnetic (FM) metals via a nonvolatile way is of importance to exploit and design next-generation novel spintronic devices. Through systematical first-principles calculations, we study the magnetic properties of the van der Waals heterostructure of two-dimensional FM metal CrTe2 and ferroelectric (FE) In2Te3 monolayers. The ferromagnetism of CrTe2 is maintained i…
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Tuning the Gilbert dam** of ferromagnetic (FM) metals via a nonvolatile way is of importance to exploit and design next-generation novel spintronic devices. Through systematical first-principles calculations, we study the magnetic properties of the van der Waals heterostructure of two-dimensional FM metal CrTe2 and ferroelectric (FE) In2Te3 monolayers. The ferromagnetism of CrTe2 is maintained in CrTe2/In2Te3 and its magnetic easy axis can be switched from in-plane to out-of-plane by reversing the FE polarization of In2Te3. Excitingly, we find that the Gilbert dam** of CrTe2 is tunable when the FE polarization of In2Te3 is reversed from upward to downward. By analyzing the k-dependent contributions to the Gilbert dam**, we unravel that such tunability results from the changed intersections between the bands of CrTe2 and Fermi level on the reversal of the FE polarizations of In2Te3 in CrTe2/In2Te3. Our work provides an appealing way to electrically tailor Gilbert dam**s of two-dimensional FM metals by contacting them with ferroelectrics.
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Submitted 7 March, 2023;
originally announced March 2023.
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Coexistence of zigzag antiferromagnetic order and superconductivity in compressed NiPSe3
Authors:
Hualei Sun,
Liang Qiu,
Yifeng Han,
Enkui Yi,
Junlong Li,
Mengwu Huo,
Chaoxin Huang,
Hui Liu,
Manrong Li,
Weiliang Wang,
Dao-Xin Yao,
Benjamin A. Frandsen,
Bing Shen,
Yusheng Hou,
Meng Wang
Abstract:
NiPSe3 is regarded as a bandwidth-controlled Mott insulator, distinct from the widely studied Mott insulating magnetic graphene MPSe3 (M = Mn and Fe) family. By employing high-pressure synchrotron X-ray diffraction, we observe two structural transitions as a function of pressure. With the help of first-principles calculations, we discover the antiferromagnetic (AFM) moment directions of NiPSe3 swi…
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NiPSe3 is regarded as a bandwidth-controlled Mott insulator, distinct from the widely studied Mott insulating magnetic graphene MPSe3 (M = Mn and Fe) family. By employing high-pressure synchrotron X-ray diffraction, we observe two structural transitions as a function of pressure. With the help of first-principles calculations, we discover the antiferromagnetic (AFM) moment directions of NiPSe3 switch from out-of-plane to in-plane and the honeycomb layers slide relative to each other at the first structural transition. The in-plane AFM order persists until the second structural transition, whereupon the two-dimensional (2D) structure assumes a more three-dimensional (3D) character. A bandwidth-controlled Mott insulator-metal transition (IMT) occurs between the two structural transitions at 8.0 GPa, concomitant with the emergence of superconductivity with 4.8 K. The superconductivity in NiPSe3 emerging in the 2D monoclinic phase coexists with the in-plane AFM order and continues into the 3D trigonal phase. Our electronic structure calculations reveal that the Mott IMT and superconductivity in NiPSe3 are both closely related to the enhanced Se2- 4p and Ni2+ 3d electronic hybridizations under pressure. From these results, we construct the temperature-pressure electronic phase diagram of NiPSe3, revealing rich physics and many similarities with copper oxide and iron-based superconductors.
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Submitted 11 January, 2023;
originally announced January 2023.
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Microwave-optics Entanglement via Cavity Optomagnomechanics
Authors:
Zhi-Yuan Fan,
Liu Qiu,
Simon Gröblacher,
Jie Li
Abstract:
Microwave-optics entanglement is a vital component for building hybrid quantum networks. Here, a new mechanism for preparing stationary entanglement between microwave and optical cavity fields in a cavity optomagnomechanical system is proposed. It consists of a magnon mode in a ferrimagnetic crystal that couples directly to a microwave cavity mode via the magnetic dipole interaction, and indirectl…
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Microwave-optics entanglement is a vital component for building hybrid quantum networks. Here, a new mechanism for preparing stationary entanglement between microwave and optical cavity fields in a cavity optomagnomechanical system is proposed. It consists of a magnon mode in a ferrimagnetic crystal that couples directly to a microwave cavity mode via the magnetic dipole interaction, and indirectly to an optical cavity through the deformation displacement of the crystal. The mechanical displacement is induced by the magnetostrictive force and coupled to the optical cavity via radiation pressure. Both the opto- and magnomechanical couplings are dispersive. Magnon-phonon entanglement is created via magnomechanical parametric down-conversion, which is further distributed to optical and microwave photons via simultaneous optomechanical beamsplitter interaction and electromagnonic state-swap interaction, yielding stationary microwave-optics entanglement. The microwave-optics entanglement is robust against thermal noise, which will find broad potential applications in quantum networks and quantum information processing with hybrid quantum systems.
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Submitted 29 September, 2023; v1 submitted 22 August, 2022;
originally announced August 2022.
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Expansion dynamics of a shell-shaped Bose-Einstein condensate
Authors:
Fan Jia,
Zerong Huang,
Liyuan Qiu,
Rongzi Zhou,
Yangqian Yan,
Dajun Wang
Abstract:
Bose-Einstein condensates (BECs) confined on shell-shaped surfaces have been proposed as a platform for exploring many nontrivial quantum phenomena on curved spaces. However, as the shell-shaped trap** potential generated with the conventional radio frequency dressing method is very sensitive to gravity, so far experimental studies of shell BECs can only be performed in micro-gravity environment…
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Bose-Einstein condensates (BECs) confined on shell-shaped surfaces have been proposed as a platform for exploring many nontrivial quantum phenomena on curved spaces. However, as the shell-shaped trap** potential generated with the conventional radio frequency dressing method is very sensitive to gravity, so far experimental studies of shell BECs can only be performed in micro-gravity environments. Here, we overcome this difficulty and create a shell BEC in the presence of Earth's gravity with immiscible dual-species BECs of sodium and rubidium atoms. After minimizing the displacement between the centers of mass of the two BECs with a magic-wavelength optical dipole trap, the interspecies repulsive interaction ensures the formation of a closed shell of sodium atoms with its center filled by rubidium atoms. Releasing the double BEC together from the trap, we observe explosion of the filled shell accompanied by energy transfer from the inner BEC to the shell BEC. With the inner BEC removed, we obtain a hollow shell BEC which shows self-interference as a manifestation of implosion. Our results pave an alternative way for investigating many of the intriguing physics offered by shell BECs.
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Submitted 2 August, 2022;
originally announced August 2022.
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Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2
Authors:
Hualei Sun,
Liang Qiu,
Yifeng Han,
Yunwei Zhang,
Weiliang Wang,
Chaoxin Huang,
Naitian Liu,
Mengwu Huo,
Lisi Li,
Hui Liu,
Zengjia Liu,
Peng Cheng,
Hongxia Zhang,
Hongliang Wang,
Lijie Hao,
Man-Rong Li,
Dao-Xin Yao,
Yusheng Hou,
Pengcheng Dai,
Meng Wang
Abstract:
We report high pressure studies on the C-type antiferromagnetic semiconductor EuTe2 up to 36.0 GPa. A structural transition from the I4/mcm to C2/m space group is identified at ~16 GPa. Superconductivity is discovered above ~5 GPa in both the I4/mcm and C2/m space groups. In the low-pressure phase (< 16 GPa), the antiferromagnetic transition temperature is enhanced with increasing pressure due to…
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We report high pressure studies on the C-type antiferromagnetic semiconductor EuTe2 up to 36.0 GPa. A structural transition from the I4/mcm to C2/m space group is identified at ~16 GPa. Superconductivity is discovered above ~5 GPa in both the I4/mcm and C2/m space groups. In the low-pressure phase (< 16 GPa), the antiferromagnetic transition temperature is enhanced with increasing pressure due to the enhanced magnetic exchange interactions. Magnetoresistance measurements indicate an interplay between the local moments of Eu2+ and the conduction electrons of Te 5p orbits. The upper critical field of the superconductivity is well above the Pauli limit. Across the structural transition to the high-pressure phase (> 16 GPa), EuTe2 becomes nonmagnetic and the superconducting transition temperature evolves smoothly with the upper critical field below the Pauli limit. Therefore, the high upper critical field of EuTe2 in the low-pressure phase is due to the exchange field compensation effect of the Eu magnetic order and the superconductivity in both structures may arise in the framework of the BCS theory.
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Submitted 6 July, 2022; v1 submitted 14 June, 2022;
originally announced June 2022.
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Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Authors:
Bosai Lyu,
Jiajun Chen,
Shuo Lou,
Can Li,
Lu Qiu,
Wengen Ouyang,
**gxu Xie,
Izaac Mitchell,
Tongyao Wu,
Aolin Deng,
Cheng Hu,
Xianliang Zhou,
Peiyue Shen,
Saiqun Ma,
Zhenghan Wu,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoqun Wang,
Qi Liang,
**feng Jia,
Michael Urbakh,
Oded Hod,
Feng Ding,
Shiyong Wang,
Zhiwen Shi
Abstract:
Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge.…
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Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalysed chemical vapor deposition (CVD). Ultra-narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming one-dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ~1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. Our study provides a scalable, single-step method for growing micrometre-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices.
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Submitted 27 May, 2022;
originally announced May 2022.
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Pressure-induced Shape-shifting of Helical Bacteria
Authors:
Cesar L. Pastrana,
Luyi Qiu,
Shahaf Armon,
Ulrich Gerland,
Ariel Amir
Abstract:
Many bacterial species are helical in form, including the widespread pathogen H. pylori. Motivated by recent experiments on H. pylori showing that cell wall synthesis is not uniform, we investigate the possible formation of helical cell shape induced by elastic heterogeneity. We show, experimentally and theoretically, that helical morphogenesis can be produced by pressurizing an elastic cylindrica…
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Many bacterial species are helical in form, including the widespread pathogen H. pylori. Motivated by recent experiments on H. pylori showing that cell wall synthesis is not uniform, we investigate the possible formation of helical cell shape induced by elastic heterogeneity. We show, experimentally and theoretically, that helical morphogenesis can be produced by pressurizing an elastic cylindrical vessel with helical reinforced lines. The properties of the pressurized helix are highly dependent on the initial helical angle of the reinforced region. We find that steep angles result in crooked helices with, surprisingly, reduced end-to-end distance upon pressurization. This work helps to explain the possible mechanisms for the generation of helical cell morphologies and may inspire the design of novel pressure-controlled helical actuators.
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Submitted 21 February, 2023; v1 submitted 19 May, 2022;
originally announced May 2022.
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Multifunctional Two-dimensional van der Waals Janus Magnet Cr-based Dichalcogenide Halides
Authors:
Yusheng Hou,
Feng Xue,
Liang Qiu,
Zhe Wang,
Ruqian Wu
Abstract:
Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y=S, Se, Te; X=Cl, Br, I), we find that CrSX (X=Cl, Br, I) are the very desirable high TC ferromagnetic semiconductors with an out-of-p…
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Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y=S, Se, Te; X=Cl, Br, I), we find that CrSX (X=Cl, Br, I) are the very desirable high TC ferromagnetic semiconductors with an out-of-plane magnetization. Excitingly, by the benefit of the large magnetic moments on ligand S2- anions, the sought-after large-gap quantum anomalous Hall effect and sizable valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi2Se3/CrSBr and MoTe2/CrSBr, respectively. Additionally, we show that large Dzyaloshinskii-Moriya interactions give rise to skyrmion states in CrTeX (X=Cl, Br, I) under external magnetic fields. Our work reveals that two-dimensional Janus magnet Cr-based dichalcogenide halides have appealing multifunctionalities in the applications of topological electronic and valleytronic devices.
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Submitted 9 May, 2022;
originally announced May 2022.
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Observation of topological Euler insulators with a trapped-ion quantum simulator
Authors:
W. -D. Zhao,
Y. -B. Yang,
Y. Jiang,
Z. -C. Mao,
W. -X. Guo,
L. -Y. Qiu,
G. -X. Wang,
L. Yao,
L. He,
Z. -C. Zhou,
Y. Xu,
L. -M. Duan
Abstract:
Symmetries play a crucial role in the classification of topological phases of matter. Although recent studies have established a powerful framework to search for and classify topological phases based on symmetry indicators, there exists a large class of fragile topology beyond the description. The Euler class characterizing the topology of two-dimensional real wave functions is an archetypal fragi…
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Symmetries play a crucial role in the classification of topological phases of matter. Although recent studies have established a powerful framework to search for and classify topological phases based on symmetry indicators, there exists a large class of fragile topology beyond the description. The Euler class characterizing the topology of two-dimensional real wave functions is an archetypal fragile topology underlying some important properties, such as non-Abelian braiding of crossing nodes and higher-order topology. However, as a minimum model of fragile topology, the two-dimensional topological Euler insulator consisting of three bands remains a significant challenge to be implemented in experiments. Here, we experimentally realize a three-band Hamiltonian to simulate a topological Euler insulator with a trapped-ion quantum simulator. Through quantum state tomography, we successfully evaluate the Euler class, Wilson loop flow and entanglement spectra to show the topological properties of the Hamiltonian. We also measure the Berry phases of the lowest energy band, illustrating the existence of four crossing points protected by the Euler class. The flexibility of the trapped-ion quantum simulator further allows us to probe dynamical topological features including skyrmion-antiskyrmion pairs and Hopf links in momentum-time space from quench dynamics. Our results show the advantage of quantum simulation technologies for studying exotic topological phases and open a new avenue for investigating fragile topological phases in experiments.
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Submitted 23 January, 2022;
originally announced January 2022.
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Glue-Assisted Grinding Exfoliation of Large-Size 2D Materials for Insulating Thermal Conduction and Large-Current-Density Hydrogen Evolution
Authors:
Liusi Yang,
Dashuai Wang,
Minsu Liu,
Heming Liu,
Junyang Tan,
Heyuan Zhou,
Zhongyue Wang,
Qiangmin Yu,
**gyun Wang,
Junhao Lin,
Xiaolong Zou,
Ling Qiu,
Hui-Ming Cheng,
Bilu Liu
Abstract:
Two-dimensional (2D) materials have many promising applications, but their scalable production remains challenging. Herein, we develop a glue-assisted grinding exfoliation (GAGE) method in which the adhesive polymer acts as a glue to massively produce 2D materials with large lateral sizes, high quality, and high yield. Density functional theory simulation shows that the exfoliation mechanism invol…
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Two-dimensional (2D) materials have many promising applications, but their scalable production remains challenging. Herein, we develop a glue-assisted grinding exfoliation (GAGE) method in which the adhesive polymer acts as a glue to massively produce 2D materials with large lateral sizes, high quality, and high yield. Density functional theory simulation shows that the exfoliation mechanism involves the competition between the binding energy of selected polymers and the 2D materials which is larger than the exfoliation energy of the layered materials. Taking h-BN as an example, the GAGE produces 2D h-BN with an average lateral size of 2.18 μm and thickness of 3.91 nm. The method is also extended to produce various other 2D materials, including graphene, MoS2, Bi2O2Se, vermiculite, and montmorillonite. Two representative applications of thus-produced 2D materials have been demonstrated, including h-BN/polymer composites for insulating thermal conduction and MoS2 electrocatalysts for large-current-density hydrogen evolution, indicating the great potential of massively produced 2D materials.
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Submitted 30 August, 2021;
originally announced August 2021.
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Bending Instability of Rod-shaped Bacteria
Authors:
Luyi Qiu,
John W. Hutchinson,
Ariel Amir
Abstract:
A thin-walled tube, e.g., a drinking straw, manifests an instability when bent by localizing the curvature change in a small region. This instability has been extensively studied since the seminal work of Brazier nearly a century ago. However, the scenario of pressurized tubes has received much less attention. Motivated by rod-shaped bacteria such as E. coli, whose cell walls are much thinner than…
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A thin-walled tube, e.g., a drinking straw, manifests an instability when bent by localizing the curvature change in a small region. This instability has been extensively studied since the seminal work of Brazier nearly a century ago. However, the scenario of pressurized tubes has received much less attention. Motivated by rod-shaped bacteria such as E. coli, whose cell walls are much thinner than their radius and are subject to a substantial internal pressure, we study, theoretically, how this instability is affected by this internal pressure. In the parameter range relevant to the bacteria, we find that the internal pressure significantly postpones the onset of the instability, while the bending stiffness of the cell wall has almost no influence. This study suggests a new method to infer turgor pressure in rod-shaped bacteria from bending experiments.
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Submitted 5 August, 2021;
originally announced August 2021.
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Observation of heat scaling across a first-order quantum phase transition in a spinor condensate
Authors:
Haiyu Liang,
Liyuan Qiu,
Yanbin Yang,
Haoxiang Yang,
Tian Tian,
Yong Xu,
Luming Duan
Abstract:
Heat generated as a result of the breakdown of an adiabatic process is one of the central concepts of thermodynamics. In isolated systems, the heat can be defined as an energy increase due to transitions between distinct energy levels. Across a second-order quantum phase transition (QPT), the heat is predicted theoretically to exhibit a power-law scaling, but it is a significant challenge for an e…
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Heat generated as a result of the breakdown of an adiabatic process is one of the central concepts of thermodynamics. In isolated systems, the heat can be defined as an energy increase due to transitions between distinct energy levels. Across a second-order quantum phase transition (QPT), the heat is predicted theoretically to exhibit a power-law scaling, but it is a significant challenge for an experimental observation. In addition, it remains elusive whether a power-law scaling of heat can exist for a first-order QPT. Here we experimentally observe a power-law scaling of heat in a spinor condensate when a system is linearly driven from a polar phase to an antiferromagnetic phase across a first-order QPT. We experimentally evaluate the heat generated during two non-equilibrium processes by probing the atom number on a hyperfine energy level. The experimentally measured scaling exponents agree well with our numerical simulation results. Our work therefore opens a new avenue to experimentally and theoretically exploring the properties of heat in non-equilibrium dynamics.
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Submitted 20 March, 2021;
originally announced March 2021.
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Angstrom-wide conductive channels in black phosphorus by Cu intercalation
Authors:
Suk Woo Lee,
Lu Qiu,
Jong Chan Yoon,
Yohan Kim,
Da Li,
Inseon Oh,
Gil-Ho Lee,
Jung-Woo Yoo,
Hyung-Joon Shin,
Feng Ding,
Zonghoon Lee
Abstract:
Intercalation is an effective method to improve and modulate properties of two-dimensional materials. Even so, spatially controlled intercalation at atomic scale, which is important to introduce and modulated properties, has not been successful due to difficulties in controlling the diffusion of intercalants. Here, we show formation of angstrom-wide conductive channels (~4.3 A) in black phosphorus…
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Intercalation is an effective method to improve and modulate properties of two-dimensional materials. Even so, spatially controlled intercalation at atomic scale, which is important to introduce and modulated properties, has not been successful due to difficulties in controlling the diffusion of intercalants. Here, we show formation of angstrom-wide conductive channels (~4.3 A) in black phosphorus by Cu intercalation. The atomic structure, resultant microstructural effects, intercalation mechanism, and local variations of electronic properties modulated in black phosphorus by Cu intercalation were investigated extensively by transmission electron microscopy including in situ observation, DFT calculation, and conductive atomic force microscopy.
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Submitted 21 January, 2021;
originally announced January 2021.
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Incipient Formation of the Reentrant Insulating Phase in a Dilute 2D Hole System with Strong Interactions
Authors:
Richard L. J. Qiu,
Chieh-Wen Liu,
Andrew J. Woods,
Alessandro Serafin,
Jian-Sheng Xia,
Loren N. Pfeiffer,
Ken W. West,
Xuan P. A. Gao
Abstract:
A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction paramet…
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A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction parameter $r_s$ (~20-30) in GaAs quantum wells. Instead of a sharp transition, increasing density (or lowering $r_s$) drives the RIP into a state where an incipient RIP coexists with the metallic 2D hole liquid. The non-trivial temperature dependent resistivity and the in-plane magnetic field induced enhancement of the RIP highlight the competition between two phases and the essential role of spin in this mixture phase, and are consistent with the Pomeranchuk effect in a mixture of Wigner crystal and Fermi liquid.
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Submitted 24 December, 2020;
originally announced December 2020.
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Dynamics of ferromagnetic bimerons driven by spin currents and magnetic fields
Authors:
Laichuan Shen,
Xiaoguang Li,
**g Xia,
Lei Qiu,
Xichao Zhang,
Oleg A. Tretiakov,
Motohiko Ezawa,
Yan Zhou
Abstract:
Magnetic bimeron composed of two merons is a topological counterpart of magnetic skyrmion in in-plane magnets, which can be used as the nonvolatile information carrier in spintronic devices. Here we analytically and numerically study the dynamics of ferromagnetic bimerons driven by spin currents and magnetic fields. Numerical simulations demonstrate that two bimerons with opposite signs of topolog…
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Magnetic bimeron composed of two merons is a topological counterpart of magnetic skyrmion in in-plane magnets, which can be used as the nonvolatile information carrier in spintronic devices. Here we analytically and numerically study the dynamics of ferromagnetic bimerons driven by spin currents and magnetic fields. Numerical simulations demonstrate that two bimerons with opposite signs of topological numbers can be created simultaneously in a ferromagnetic thin film via current-induced spin torques. The current-induced spin torques can also drive the bimeron and its speed is analytically derived, which agrees with the numerical results. Since the bimerons with opposite topological numbers can coexist and have opposite drift directions, two-lane racetracks can be built in order to accurately encode the data bits. In addition, the dynamics of bimerons induced by magnetic field gradients and alternating magnetic fields are investigated. It is found that the bimeron driven by alternating magnetic fields can propagate along a certain direction. Moreover, combining a suitable magnetic field gradient, the Magnus-force-induced transverse motion can be completely suppressed, which implies that there is no skyrmion Hall effect. Our results are useful for understanding of the bimeron dynamics and may provide guidelines for building future bimeron-based spintronic devices.
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Submitted 29 July, 2020; v1 submitted 25 May, 2020;
originally announced May 2020.
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Observation of generalized Kibble-Zurek mechanism across a first-order quantum phase transition in a spinor condensate
Authors:
L. -Y. Qiu,
H. -Y. Liang,
Y. -B. Yang,
H. -X. Yang,
T. Tian,
Y. Xu,
L. -M. Duan
Abstract:
The Kibble-Zurek mechanism provides a unified theory to describe the universal scaling laws in the dynamics when a system is driven through a second-order quantum phase transition. However, for first-order quantum phase transitions, the Kibble-Zurek mechanism is usually not applicable. Here, we experimentally demonstrate and theoretically analyze a power-law scaling in the dynamics of a spin-1 con…
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The Kibble-Zurek mechanism provides a unified theory to describe the universal scaling laws in the dynamics when a system is driven through a second-order quantum phase transition. However, for first-order quantum phase transitions, the Kibble-Zurek mechanism is usually not applicable. Here, we experimentally demonstrate and theoretically analyze a power-law scaling in the dynamics of a spin-1 condensate across a first-order quantum phase transition when a system is slowly driven from a polar phase to an antiferromagnetic phase. We show that this power-law scaling can be described by a generalized Kibble-Zurek mechanism. Furthermore, by experimentally measuring the spin population, we show the power-law scaling of the temporal onset of spin excitations with respect to the quench rate, which agrees well with our numerical simulation results. Our results open the door for further exploring the generalized Kibble-Zurek mechanism to understand the dynamics across first-order quantum phase transitions.
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Submitted 22 May, 2020; v1 submitted 28 January, 2020;
originally announced January 2020.
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Observation of Dynamical Quantum Phase Transition with Correspondence in Excited State Phase Diagram
Authors:
T. Tian,
H. -X. Yang,
L. -Y. Qiu,
H. -Y. Liang,
Y. -B. Yang,
Y. Xu,
L. -M. Duan
Abstract:
Dynamical quantum phase transitions are closely related to equilibrium quantum phase transitions for ground states. Here, we report an experimental observation of a dynamical quantum phase transition in a spinor condensate with correspondence in an excited state phase diagram, instead of the ground state one. We observe that the quench dynamics exhibits a non-analytical change with respect to a pa…
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Dynamical quantum phase transitions are closely related to equilibrium quantum phase transitions for ground states. Here, we report an experimental observation of a dynamical quantum phase transition in a spinor condensate with correspondence in an excited state phase diagram, instead of the ground state one. We observe that the quench dynamics exhibits a non-analytical change with respect to a parameter in the final Hamiltonian in the absence of a corresponding phase transition for the ground state there. We make a connection between this singular point and a phase transition point for the highest energy level in a subspace with zero spin magnetization of a Hamiltonian. We further show the existence of dynamical phase transitions for finite magnetization corresponding to the phase transition of the highest energy level in the subspace with the same magnetization. Our results open a door for using dynamical phase transitions as a tool to probe physics at higher energy eigenlevels of many-body Hamiltonians.
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Submitted 19 February, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
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Antiferromagnetic Skyrmion-Based Logic Gates Controlled by Electric Currents and Fields
Authors:
Xue Liang,
**g Xia,
Xichao Zhang,
Motohiko Ezawa,
Oleg A. Tretiakov,
Xiaoxi Liu,
Lei Qiu,
Guo** Zhao,
Yan Zhou
Abstract:
Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive interest in recent years. In this work, we investigate the dynamics of isolated skyrmions in an antiferromagnetic nanotrack with a voltage-gated region. It is found t…
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Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive interest in recent years. In this work, we investigate the dynamics of isolated skyrmions in an antiferromagnetic nanotrack with a voltage-gated region. It is found that the skyrmion can be jointly controlled by the driving current and the voltage-controlled magnetic anisotropy gradient. We further propose a design of logic computing gates based on the manipulation of antiferromagnetic skyrmions, which is numerically realized combining several interactions and phenomena, including the spin Hall effect, voltage-controlled magnetic anisotropy effect, skyrmion-skyrmion interaction, and skyrmion-edge interaction. The proposed logic gates can perform the basic Boolean operations of the logic AND, OR, NOT, NAND and NOR gates. Our results may have a great impact on fundamental physics, and be useful for designing future non-volatile logic computing devices with ultra-low energy consumption and ultra-high storage density.
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Submitted 28 July, 2021; v1 submitted 24 September, 2019;
originally announced September 2019.
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Magnon transport in quasi-two-dimensional van der Waals antiferromagnets
Authors:
Wenyu Xing,
Luyi Qiu,
Xirui Wang,
Yunyan Yao,
Yang Ma,
Ranran Cai,
Shuang Jia,
X. C. Xie,
Wei Han
Abstract:
The recent emergence of 2D van der Waals magnets down to atomic layer thickness provides an exciting platform for exploring quantum magnetism and spintronics applications. The van der Waals nature stabilizes the long-range ferromagnetic order as a result of magnetic anisotropy. Furthermore, giant tunneling magnetoresistance and electrical control of magnetism have been reported. However, the poten…
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The recent emergence of 2D van der Waals magnets down to atomic layer thickness provides an exciting platform for exploring quantum magnetism and spintronics applications. The van der Waals nature stabilizes the long-range ferromagnetic order as a result of magnetic anisotropy. Furthermore, giant tunneling magnetoresistance and electrical control of magnetism have been reported. However, the potential of 2D van der Waals magnets for magnonics, magnon-based spintronics, has not been explored yet. Here, we report the experimental observation of long-distance magnon transport in quasi-twodimensional van der Waals antiferromagnet MnPS3, which demonstrates the 2D magnets as promising material candidates for magnonics. As the 2D MnPS3 thickness decreases, a shorter magnon diffusion length is observed, which could be attributed to the surface-impurity-induced magnon scattering. Our results could pave the way for exploring quantum magnonics phenomena and designing future magnonics devices based on 2D van der Waals magnets.
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Submitted 12 February, 2019;
originally announced February 2019.
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Size dependence of the Graphene Islands Moving on Cu (111) Surface during the CVD Growth
Authors:
Ziwei Xu,
Changshuai Shi,
Lu Qiu,
Feng Ding
Abstract:
The graphene islands, formed as different sizes, are crucial for the final quality of the formed graphene during the CVD growth either as the nucleation seeds or as the build blocks for larger graphene domains. Extensive efforts had been devoted to the size or the morphology control while fewer works were reported on the moving dynamics of these graphene islands as well as the associate influences…
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The graphene islands, formed as different sizes, are crucial for the final quality of the formed graphene during the CVD growth either as the nucleation seeds or as the build blocks for larger graphene domains. Extensive efforts had been devoted to the size or the morphology control while fewer works were reported on the moving dynamics of these graphene islands as well as the associate influences to their coalescence during the CVD Growth of graphene. In this study, based on the self-developed C-Cu empirical potential, we performed systematic molecular dynamics simulations on the surface moving of three typical graphene islands CN (N = 24, 54 and 96) on the Cu (111) surface and discovered their different behaviors in sinking, lateral translation and rotation at the atomic scale owning to their different sizes, which were proved to bring forth significant impacts to their coalescences and the final quality of the as-formed larger domains of graphene. This study would deepen our atomistic insights into the mechanisms of the graphene CVD growth and provide significant theoretical guidelines to its controlled synthesis.
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Submitted 24 August, 2018;
originally announced August 2018.
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Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$
Authors:
San-Dong Guo,
Liang Qiu
Abstract:
Recently, $\mathrm{BaSn_2}$ is predicted to be a strong topological insulator by the first-principle calculations. It is well known that topological insulator has a close connection to thermoelectric material, such as $\mathrm{Bi_2Te_3}$ family. In this work, we investigate thermoelectric properties of $\mathrm{BaSn_2}$ by the first-principles combined with Boltzmann transport theory. The electron…
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Recently, $\mathrm{BaSn_2}$ is predicted to be a strong topological insulator by the first-principle calculations. It is well known that topological insulator has a close connection to thermoelectric material, such as $\mathrm{Bi_2Te_3}$ family. In this work, we investigate thermoelectric properties of $\mathrm{BaSn_2}$ by the first-principles combined with Boltzmann transport theory. The electronic part is carried out by a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC), while the phonon part is performed using generalized gradient approximation (GGA). It is found that the electronic transport coefficients between the in-plane and cross-plane directions show the strong anisotropy, while lattice lattice thermal conductivities show an almost isotropy. Calculated results show a very low lattice thermal conductivity for $\mathrm{BaSn_2}$, and the corresponding average lattice thermal conductivity at room temperature is 1.69 $\mathrm{W m^{-1} K^{-1}}$, which is comparable or lower than those of lead chalcogenides and bismuth-tellurium systems as classic thermoelectric materials. Due to the complicated scattering mechanism, calculating scattering time $τ$ is challenging. By using a empirical $τ$=$10^{-14}$ s, the n-type figure of merit $ZT$ is greater than 0.40 in wide temperature range. Experimentally, it is possible to attain better thermoelectric performance, or to enhance one by strain or tuning size parameter. This work indicates that $\mathrm{BaSn_2}$ may be a potential thermoelectric material, which can stimulate further theoretical and experimental works.
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Submitted 20 August, 2016;
originally announced August 2016.
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Evidence for a New Intermediate Phase in a Strongly Correlated 2D System near Wigner Crystallization
Authors:
R. L. J. Qiu,
N. J. Goble,
A. Serafin,
L. Yin,
J. S. Xia,
N. S. Sullivan,
L. N. Pfeiffer,
K. W. West,
Xuan P. A. Gao
Abstract:
How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insul…
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How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insulating phase (RIP) which was interpreted as due to WC formation [Qiu et al, PRL 108, 106404 (2012)], in a strongly correlated 2D hole system with large interaction parameter $r_s$ ($\sim~$20-30) and high mobility. Instead of a sharp transition, we found that increasing density (or lowering $r_s$) drives the RIP into a state where the incipient RIP coexists with Fermi liquid. This apparent mixture phase intermediate between Fermi liquid and WC also exhibits a non-trivial temperature dependent resistivity behavior which may be qualitatively understood by the reversed melting of WC in the mixture, in analogy to the Pomeranchuk effect in the solid-liquid mixture of Helium-3.
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Submitted 24 September, 2015;
originally announced September 2015.
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Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets
Authors:
Chee Huei Lee,
Rui He,
ZhenHua Wang,
Richard L. J. Qiu,
Ajay Kumar,
Conor Delaney,
Ben Beck,
T. E. Kidd,
C. C. Chancey,
R. Mohan Sankaran,
Xuan P. A. Gao
Abstract:
Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3…
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Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-do** level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled do** can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.
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Submitted 15 March, 2013;
originally announced March 2013.
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Ambipolar Surface Conduction in Ternary Topological Insulator Bi_2(Te_{1-x}Se_x)_3 Nanoribbons
Authors:
ZhenHua Wang,
Richard L. J. Qiu,
Chee Huei Lee,
ZhiDong Zhang,
Xuan P. A. Gao
Abstract:
We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with…
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We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with x ~20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thickness around or larger than 100nm, indicating significantly enhanced contribution in transport from the gapless surface states.
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Submitted 15 March, 2013;
originally announced March 2013.
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One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires
Authors:
Yuan Tian,
Mohammed R. Sakr,
Jesse M. Kinder,
Dong Liang,
Michael J. MacDonald,
Richard L. J. Qiu,
Hong-Jun Gao,
Xuan P. A. Gao
Abstract:
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate…
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We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate voltage shifts the chemical potential of electrons in InAs nanowire through quasi-one-dimensional (1D) sub-bands. This work experimentally shows the possibility to modulate semiconductor nanowire's thermoelectric properties through the peaked 1D electronic density of states in the diffusive transport regime, a long-sought goal in nanostructured thermoelectrics research. Moreover, we point out the importance of scattering (or disorder) induced energy level broadening in smearing out the 1D confinement enhanced thermoelectric power factor at practical temperatures (e.g. 300K).
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Submitted 15 March, 2013;
originally announced March 2013.
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Evaluation of Scale-Invariance In Physiological Signals By Means Of Balanced Estimation Of Diffusion Entropy
Authors:
Wenqing Zhang,
Lu Qiu,
Qin Xiao,
Huijie Yang,
Qingjun Zhang,
Jianyong Wang
Abstract:
By means of the concept of balanced estimation of diffusion entropy we evaluate reliable scale-invariance embedded in different sleep stages and stride records. Segments corresponding to Wake, light sleep, REM, and deep sleep stages are extracted from long-term EEG signals. For each stage the scaling value distributes in a considerable wide range, which tell us that the scaling behavior is subject…
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By means of the concept of balanced estimation of diffusion entropy we evaluate reliable scale-invariance embedded in different sleep stages and stride records. Segments corresponding to Wake, light sleep, REM, and deep sleep stages are extracted from long-term EEG signals. For each stage the scaling value distributes in a considerable wide range, which tell us that the scaling behavior is subject- and sleep cycle- dependent. The average of the scaling exponent values for wake segments is almost the same with that for REM segments ($\sim 0.8$). Wake and REM stages have significant high value of average scaling exponent, compared with that for light sleep stages ($\sim 0.7$). For the stride series, the original diffusion entropy (DE) and balanced estimation of diffusion entropy (BEDE) give almost the same results for de-trended series. Evolutions of local scaling invariance show that the physiological states change abruptly, though in the experiments great efforts have been done to keep conditions unchanged. Global behaviors of a single physiological signal may lose rich information on physiological states. Methodologically, BEDE can evaluate with considerable precision scale-invariance in very short time series ($\sim 10^2$), while the original DE method sometimes may underestimate scale-invariance exponents or even fail in detecting scale-invariant behavior. The BEDE method is sensitive to trends in time series. Existence of trend may leads to a unreasonable high value of scaling exponent, and consequent mistake conclusions.
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Submitted 12 November, 2012;
originally announced November 2012.
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Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System
Authors:
Richard L. J. Qiu,
Xuan P. A. Gao,
L. N. Pfeiffer,
K. W. West
Abstract:
We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and th…
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We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and the zero field metallic state and is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density by transport and capacitance experiments, we show that the RIP is incompressible and continuously connected to the zero field insulator, suggesting a similar origin for these two phases.
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Submitted 24 September, 2011;
originally announced September 2011.
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Degenerate versus semi-degenerate transport in a correlated 2D hole system
Authors:
Richard L. J. Qiu,
Xuan P. A. Gao,
Loren N. Pfeiffer,
Ken W. West
Abstract:
It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear d…
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It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear density ($p$) dependent conductivity, $σ\approx eμ^*(p-p_0)$, in both the degenerate (T<<T_F) and semi-degenerate (T T_F) regimes. The $T$-dependence of $σ(p)$ suggests that the metallic conduction (d$σ$/d$T<$0) at low $T$ is associated with the increase in $μ^*$, the effective mobility of itinerant carriers. However, the resistivity decrease in the semi-degenerate regime ($T>T_F$) is originated from the reduced $p_0$, the density of immobile carriers in a two-phase picture.
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Submitted 25 April, 2011;
originally announced April 2011.
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Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons
Authors:
Hao Tang,
Dong Liang,
Richard L. J. Qiu,
Xuan P. A. Gao
Abstract:
We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semicon…
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We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications.
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Submitted 1 August, 2011; v1 submitted 11 January, 2011;
originally announced January 2011.
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Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons
Authors:
Hao Tang,
Dong Liang,
Richard L. J. Qiu,
Xuan P. A. Gao
Abstract:
Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increa…
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Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture.
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Submitted 29 April, 2010; v1 submitted 31 March, 2010;
originally announced March 2010.
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Preparation and transport properties of non-hydrated Na$_{0.5}$CoO$_2$ single crystals
Authors:
X. Z. Chen,
Z. A. Xu,
G. H. Cao,
J. Q. Shen,
L. M. Qiu,
Z. H. Gan
Abstract:
Single crystals of Na$_{0.5}$CoO$_2$ were obtained through a flux method followed by de-intercalation of sodium. The Na$_{0.5}$CoO$_2$ samples were found to be vulnerable to water in the air and a hydration process in which H$_2$O molecules fill oxygen vacancies in CoO$_2$ layers is suggested to be responsible for the unusual vulnerability to water. The transport properties, including resistivit…
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Single crystals of Na$_{0.5}$CoO$_2$ were obtained through a flux method followed by de-intercalation of sodium. The Na$_{0.5}$CoO$_2$ samples were found to be vulnerable to water in the air and a hydration process in which H$_2$O molecules fill oxygen vacancies in CoO$_2$ layers is suggested to be responsible for the unusual vulnerability to water. The transport properties, including resistivity (\emph{$ρ$}), thermopower (\emph{S}) and Hall coefficient (\emph{R$_H$}), were studied in a temperature range of 5-300 K. The compound shows a weak localization of carriers just below 200 K and Co$^{3+}$-Co$^{4+}$ charge ordering at about 30 K, a relatively lower temperature than previously reported. The results seem to be quite different from those previously reported for this system [Foo et al, Phys. Rev. Lett. 92 (2004) 247001]. Possible mechanism underlying this kind of inconsistency is discussed.
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Submitted 11 December, 2004;
originally announced December 2004.
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Effect of Na do** on flux pinning of YBa1.9Na0.1Cu3O7-d
Authors:
S. Y. Ding,
X. Leng,
L. Qiu,
Z. H. Wang,
H. Luo,
Y. Liu,
H. Zhang
Abstract:
We have prepared Na-doped YBa2Cu3Oy (YBa1.9Na0.1Cu3Oy +40mol%Y211) (YBNCO) and Na-free YBa2Cu3Oy (YBCO) samples by the Melt-Textured Growth (MTG) method to study the effect of doped Na ion on flux pinning. The ac susceptibility curves (acs) as well as the hysteresis loops were measured for the samples. Then the effective pinning energy (U(T,Hdc,J)), irreversibility line (Hirr(T)) and critical cu…
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We have prepared Na-doped YBa2Cu3Oy (YBa1.9Na0.1Cu3Oy +40mol%Y211) (YBNCO) and Na-free YBa2Cu3Oy (YBCO) samples by the Melt-Textured Growth (MTG) method to study the effect of doped Na ion on flux pinning. The ac susceptibility curves (acs) as well as the hysteresis loops were measured for the samples. Then the effective pinning energy (U(T,Hdc,J)), irreversibility line (Hirr(T)) and critical current density (jc(Hdc)) were determined, where T, Hdc and J are temperature, dc magnetic field and current density, respectively. We found that, with Na do**, the Hirr(T) line shifted to lower temperature while the Jc(Hdc) and U(T,Hdc,J) became smaller. It indicates that the Na ions play a negative role in the flux pinning of YBCO. The appearance of the second peak in the Jc(Hdc) curves and the enhancement of anisotropy in YBNCO further support this finding.
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Submitted 5 September, 2002;
originally announced September 2002.
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History effect in inhomogeneous superconductors
Authors:
Y. Liu,
H. Luo,
X. Leng,
L. Qiu,
Z. H. Wang,
S. Y. Ding,
L. Z. Lin
Abstract:
A model was proposed to account for a new kind of history effect in the transport measurement of a sample with inhomogeneous flux pinning coupled with flux creep. The inhomogeneity of flux pinning was described in terms of alternating weak pinning (lower jc) and strong pinning region (higher jc). The flux creep was characterized by logarithmic barrier. Based on this model, we numerically observe…
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A model was proposed to account for a new kind of history effect in the transport measurement of a sample with inhomogeneous flux pinning coupled with flux creep. The inhomogeneity of flux pinning was described in terms of alternating weak pinning (lower jc) and strong pinning region (higher jc). The flux creep was characterized by logarithmic barrier. Based on this model, we numerically observed the same clockwise V-I loops as reported in references. Moreover, we predicted behaviors of the V-I loop at different swee** rates of applied current dI/dt or magnetic fields Ba, etc. Electric transport measurement was performed in Ag-sheathed Bi2-xPbxSr2Ca2Cu3Oy tapes immersed in liquid nitrogen with and without magnetic fields. V-I loop at certain dI/dt and Ba was observed. It is found that the area of the loop is more sensitive to dI/dt than to Ba, which is in agreement well with our numerical results.
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Submitted 4 September, 2002;
originally announced September 2002.