Showing 1–41 of 41 results for author: Qiu, J

An antiferromagnetic diode effect in even-layered MnBi2Te4

Authors: Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien Bérubé, Thao Dinh, Houchen Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Arun Bansil, Hsin Lin, Tay-Rong Chang, Amir Yacoby , et al. (4 additional authors not shown)

Abstract: In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric supercondu… ▽ More In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Comments: 33+8 pages, 14+2 figures

An optimization-based equilibrium measure describes non-equilibrium steady state dynamics: application to edge of chaos

Authors: Junbin Qiu, Hai** Huang

Abstract: Understanding neural dynamics is a central topic in machine learning, non-linear physics and neuroscience. However, the dynamics is non-linear, stochastic and particularly non-gradient, i.e., the driving force can not be written as gradient of a potential. These features make analytic studies very challenging. The common tool is the path integral approach or dynamical mean-field theory, but the dr… ▽ More Understanding neural dynamics is a central topic in machine learning, non-linear physics and neuroscience. However, the dynamics is non-linear, stochastic and particularly non-gradient, i.e., the driving force can not be written as gradient of a potential. These features make analytic studies very challenging. The common tool is the path integral approach or dynamical mean-field theory, but the drawback is that one has to solve the integro-differential or dynamical mean-field equations, which is computationally expensive and has no closed form solutions in general. From the aspect of associated Fokker-Planck equation, the steady state solution is generally unknown. Here, we treat searching for the steady states as an optimization problem, and construct an approximate potential related to the speed of the dynamics, and find that searching for the ground state of this potential is equivalent to running an approximate stochastic gradient dynamics or Langevin dynamics. Only in the zero temperature limit, the distribution of the original steady states can be achieved. The resultant stationary state of the dynamics follows exactly the canonical Boltzmann measure. Within this framework, the quenched disorder intrinsic in the neural networks can be averaged out by applying the replica method, which leads naturally to order parameters for the non-equilibrium steady states. Our theory reproduces the well-known result of edge-of-chaos, and further the order parameters characterizing the continuous transition are derived, and the order parameters are explained as fluctuations and responses of the steady states. Our method thus opens the door to analytically study the steady state landscape of the deterministic or stochastic high dimensional dynamics. △ Less

Submitted 7 June, 2024; v1 submitted 18 January, 2024; originally announced January 2024.

Comments: 21 pages, 9 figures, revised version 2

Nonlinear optical diode effect in a magnetic Weyl semimetal

Authors: Christian Tzschaschel, Jian-Xiang Qiu, Xue-Jian Gao, Hou-Chen Li, Chunyu Guo, Hung-Yu Yang, Cheng-** Zhang, Ying-Ming Xie, Yu-Fei Liu, Anyuan Gao, Damien Bérubé, Thao Dinh, Sheng-Chin Ho, Yuqiang Fang, Fuqiang Huang, Johanna Nordlander, Qiong Ma, Fazel Tafti, Philip J. W. Moll, Kam Tuen Law, Su-Yang Xu

Abstract: Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimeta… ▽ More Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light. △ Less

Submitted 8 April, 2024; v1 submitted 28 July, 2023; originally announced July 2023.

Comments: 20 pages, 4 figures, SI included

Journal ref: Nat. Commun 15, 3017 (2024)

Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure

Authors: Anyuan Gao, Yu-Fei Liu, Jian-Xiang Qiu, Barun Ghosh, Thaís V. Trevisan, Yugo Onishi, Chaowei Hu, Tiema Qian, Hung-Ju Tien, Shao-Wen Chen, Mengqi Huang, Damien Bérubé, Houchen Li, Christian Tzschaschel, Thao Dinh, Zhe Sun, Sheng-Chin Ho, Shang-Wei Lien, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Hsin Lin, Tay-Rong Chang, Chunhui Rita Du , et al. (6 additional authors not shown)

Abstract: Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferroma… ▽ More Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics. △ Less

Submitted 23 July, 2023; v1 submitted 15 June, 2023; originally announced June 2023.

Comments: 19 pages, 4 figures and a Supplementary Materials with 66 pages, 4 figures and 3 tables. Originally submitted to Science on Oct. 5, 2022

Journal ref: Science 381, 181-186 (2023)

Axion optical induction of antiferromagnetic order

Authors: Jian-Xiang Qiu, Christian Tzschaschel, Junyeong Ahn, Anyuan Gao, Houchen Li, Xin-Yue Zhang, Barun Ghosh, Chaowei Hu, Yu-Xuan Wang, Yu-Fei Liu, Damien Bérubé, Thao Dinh, Zhenhao Gong, Shang-Wei Lien, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Hai-Zhou Lu, Arun Bansil, Hsin Lin, Tay-Rong Chang, Brian B. Zhou, Qiong Ma , et al. (3 additional authors not shown)

Abstract: Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics… ▽ More Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics. In this paper, we report the surprising observation of helicity-dependent optical control of fully-compensated antiferromagnetic (AFM) order in 2D even-layered MnBi$_2$Te$_4$, a topological Axion insulator with neither chirality nor $M$. We further demonstrate helicity-dependent optical creation of AFM domain walls by double induction beams and the direct reversal of AFM domains by ultrafast pulses. The control and reversal of AFM domains and domain walls by light helicity have never been achieved in any fully-compensated AFM. To understand this optical control, we study a novel type of circular dichroism (CD) proportional to the AFM order, which only appears in reflection but is absent in transmission. We show that the optical control and CD both arise from the optical Axion electrodynamics, which can be visualized as a Berry curvature real space dipole. Our Axion induction provides the possibility to optically control a family of $\mathcal{PT}$-symmetric AFMs such as Cr$_2$O$_3$, CrI$_3$ and possibly novel states in cuprates. In MnBi$_2$Te$_4$, this further opens the door for optical writing of dissipationless circuit formed by topological edge states. △ Less

Submitted 9 March, 2023; originally announced March 2023.

Journal ref: Nature Materials 22, 583-590 (2023)

A new alloy for Al-chalcogen system: AlSe surface alloy on Al (111)

Authors: En-Ze Shao, Kai Liu, Hao Xie, Kaiqi Geng, Keke Bai, **glan Qiu, **g Wang, Wen-Xiao Wang, Juntao Song

Abstract: Metal chalcogenide is a promising material for studying novel underlying physical phenomena and nanoelectronics applications. Here, we systematically investigate the crystal structure and electronic properties of the AlSe surface alloy on Al (111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometer, and first-principle calculations. We reveal that the AlSe surface alloy… ▽ More Metal chalcogenide is a promising material for studying novel underlying physical phenomena and nanoelectronics applications. Here, we systematically investigate the crystal structure and electronic properties of the AlSe surface alloy on Al (111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometer, and first-principle calculations. We reveal that the AlSe surface alloy possesses a hexagonal closed-packed structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with 1.16 A along the z direction. The dispersion shows two hole-like bands for AlSe surface alloy located at about -2.2 eV, far below the Fermi level, which is sharply different from other metal chalcogenide and binary alloys. These two bands mainly derive from the in-plane orbital of AlSe (px and py). These results provide implications for related Al-chalcogen interface. Meanwhile, AlSe alloy have an advantage of large-scale atomic flatness and a wide band gap near the Fermi level in serving as an interface for two-dimensional materials. △ Less

Submitted 17 October, 2022; originally announced October 2022.

Comments: 15 pages, 5 figures

Organic metallic epsilon-near-zero materials with large ultrafast optical nonlinearity

Authors: Qili Hu, Xinlan Yu, Hongqi Liu, Jiahuan Qiu, Wei Tang, Sen Liang, Linjun Li, Miao Du, Junjun Jia, Hui Ye

Abstract: Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT) films show metallic characteristics and a resultant ENZ wavelength near 1550nm through polar solvent treatment and annealing. The metallic PEDOT film exhibits an i… ▽ More Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT) films show metallic characteristics and a resultant ENZ wavelength near 1550nm through polar solvent treatment and annealing. The metallic PEDOT film exhibits an intrinsic optical nonlinear response that is comparable to gold and 100-fold higher than typical inorganic semiconductor ENZ materials due to π-conjugated delocalized electrons. Hot carriers generate a 22-fold increase in the optical nonlinearity coefficient of metallic PEDOT films at 1550 nm. Hot holes in metallic PEDOT films have a smaller enhancement multiple of carrier temperature and a longer relaxation time than hot electrons in inorganic ENZ materials due to the larger imaginary permittivity and hot-phonon bottleneck for carrier cooling. Our findings suggest that π-conjugated ENZ polymer may have unique ultrafast and nonlinear optical properties compared to inorganic ENZ materials, enabling new possibilities in on-chip nanophotonic devices, nonlinear optics, and plasmonics. △ Less

Submitted 5 October, 2022; v1 submitted 12 April, 2022; originally announced April 2022.

Comments: There is a mistake in our simulation part of two-temperature model. Thus we revise the parameter and reconstruct our idea. The new content is very different to this old one. Thus, we want to withdraw this paper and submit another new one

Exploring Native Atomic Defects in NiTe2

Authors: Wen-Xiao Wang, Kaihui Li, Xiaoshan Dong, Hao Xie, **glan Qiu, Chunqiang Xu, Kai Liu, Juntao Song, Yi-Wen Wei, Ke-Ke Bai, Xiaofeng Xu, Ying Liu

Abstract: Nickel ditelluride (NiTe2), a new discovered type-II Dirac semimetal whose Dirac node lies close to its Fermi level, is expected to exhibit exotic phenomena including Lifshitz transition and superconductivity. As we know, defects are inevitable for transition metal dichalcogenides and have significant impacts on the optical and electronic properties. However, the systematic study of defects in NiT… ▽ More Nickel ditelluride (NiTe2), a new discovered type-II Dirac semimetal whose Dirac node lies close to its Fermi level, is expected to exhibit exotic phenomena including Lifshitz transition and superconductivity. As we know, defects are inevitable for transition metal dichalcogenides and have significant impacts on the optical and electronic properties. However, the systematic study of defects in NiTe2 is still lack. Here, by using high-resolution scanning tunneling microscopy combined with first-principles calculations, the point defects including the vacancy, intercalation and antisite defects in NiTe2 are systematically investigated. We identified five main types native defects and revealed that the growth condition could affect the type of native defects. By controlling the ratio of ingredient during synthesis, the types of point defects are expected to be manipulated, especially antisite defects. Additionally, we find native defects could slightly dope the topological surface states. Our results provide a facile way to manipulate defects for future optimizing the electronic properties of NiTe2 and other related materials. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Comments: 17 pages, 4 figures, 1 table

Equivalence between algorithmic instability and transition to replica symmetry breaking in perceptron learning systems

Authors: Yang Zhao, Junbin Qiu, Mingshan Xie, Hai** Huang

Abstract: Binary perceptron is a fundamental model of supervised learning for the non-convex optimization, which is a root of the popular deep learning. Binary perceptron is able to achieve a classification of random high-dimensional data by computing the marginal probabilities of binary synapses. The relationship between the algorithmic instability and the equilibrium analysis of the model remains elusive.… ▽ More Binary perceptron is a fundamental model of supervised learning for the non-convex optimization, which is a root of the popular deep learning. Binary perceptron is able to achieve a classification of random high-dimensional data by computing the marginal probabilities of binary synapses. The relationship between the algorithmic instability and the equilibrium analysis of the model remains elusive. Here, we establish the relationship by showing that the instability condition around the algorithmic fixed point is identical to the instability for breaking the replica symmetric saddle point solution of the free energy function. Therefore, our analysis would hopefully provide insights towards other learning systems in bridging the gap between non-convex learning dynamics and statistical mechanics properties of more complex neural networks. △ Less

Submitted 7 March, 2022; v1 submitted 25 November, 2021; originally announced November 2021.

Comments: 24 pages, 2 figures, revision to journal

Journal ref: Phys. Rev. Research 4, 023023 (2022)

Layer Hall effect in a 2D topological Axion antiferromagnet

Authors: Anyuan Gao, Yu-Fei Liu, Chaowei Hu, Jian-Xiang Qiu, Christian Tzschaschel, Barun Ghosh, Sheng-Chin Ho, Damien Bérubé, Rui Chen, Haipeng Sun, Zhaowei Zhang, Xin-Yue Zhang, Yu-Xuan Wang, Naizhou Wang, Zumeng Huang, Claudia Felser, Amit Agarwal, Thomas Ding, Hung-Ju Tien, Austin Akey, Jules Gardener, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, Kenneth S. Burch , et al. (11 additional authors not shown)

Abstract: While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level… ▽ More While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential. △ Less

Submitted 21 July, 2021; originally announced July 2021.

Comments: A revised version of this article is published in Nature

Active gyrotactic stability of microswimmers using hydromechanical signals

Authors: **gran Qiu, Navid Mousavi, Lihao Zhao, Kristian Gustavsson

Abstract: Many plankton species undergo daily vertical migration to large depths in the turbulent ocean. To do this efficiently, the plankton can use a gyrotactic mechanism, aligning them with gravity to swim downwards, or against gravity to swim upwards. Many species show passive mechanisms for gyrotactic stability. For example, bottom-heavy plankton tend to align upwards. This is efficient for upward migr… ▽ More Many plankton species undergo daily vertical migration to large depths in the turbulent ocean. To do this efficiently, the plankton can use a gyrotactic mechanism, aligning them with gravity to swim downwards, or against gravity to swim upwards. Many species show passive mechanisms for gyrotactic stability. For example, bottom-heavy plankton tend to align upwards. This is efficient for upward migration in quiescent flows, but it is often sensitive to turbulence which upsets the alignment. Here we suggest a simple, robust active mechanism for gyrotactic stability, which is only lightly affected by turbulence and allows alignment both along and against gravity. We use a model for a plankton that swims with a constant speed and can actively steer in response to hydrodynamic signals encountered in simulations of a turbulent flow. Using reinforcement learning, we identify the optimal steering strategy. By using its setae to sense its settling velocity transversal to its swimming direction, the swimmer can deduce information about the direction of gravity, allowing it to actively align upwards. The mechanism leads to a rate of upward migration in a turbulent flow that is of the same order as in quiescent flows, unless the turbulence is very vigorous. In contrast, passive swimmers with typical parameters of copepods show much smaller upward velocity in turbulence. Settling may even cause them to migrate downwards in vigorous turbulence. △ Less

Submitted 16 December, 2021; v1 submitted 25 May, 2021; originally announced May 2021.

Navigation of micro-swimmers in steady flow: the importance of symmetries

Authors: J. Qiu, N. Mousavi, K. Gustavsson, C. Xu, B. Mehlig, L. Zhao

Abstract: Marine microorganisms must cope with complex flow patterns and even turbulence as they navigate the ocean. To survive they must avoid predation and find efficient energy sources. A major difficulty in analysing possible survival strategies is that the time series of environmental cues in non-linear flow is complex, and that it depends on the decisions taken by the organism. One way of determining… ▽ More Marine microorganisms must cope with complex flow patterns and even turbulence as they navigate the ocean. To survive they must avoid predation and find efficient energy sources. A major difficulty in analysing possible survival strategies is that the time series of environmental cues in non-linear flow is complex, and that it depends on the decisions taken by the organism. One way of determining and evaluating optimal strategies is reinforcement learning. In a proof-of-principle study, Colabrese et al. [Phys. Rev. Lett. (2017)] used this method to find out how a micro-swimmer in a vortex flow can navigate towards the surface as quickly as possible, given a fixed swimming speed. The swimmer measured its instantaneous swimming direction and the local flow vorticity in the laboratory frame, and reacted to these cues by swimming either left, right, up, or down. However, usually a motile microorganism measures the local flow rather than global information, and it can only react in relation to the local flow, because in general it cannot access global information (such as up or down in the laboratory frame). Here we analyse optimal strategies with local signals and actions that do not refer to the laboratory frame. We demonstrate that symmetry-breaking is required in order to learn vertical migration in a meaningful way. Using reinforcement learning we analyse the emerging strategies for different sets of environmental cues that microorganisms are known to measure. △ Less

Submitted 22 April, 2021; originally announced April 2021.

Comments: 20 pages, 5 figures

Journal ref: J. Fluid Mech. 932 (2022) A10

Incipient Formation of the Reentrant Insulating Phase in a Dilute 2D Hole System with Strong Interactions

Authors: Richard L. J. Qiu, Chieh-Wen Liu, Andrew J. Woods, Alessandro Serafin, Jian-Sheng Xia, Loren N. Pfeiffer, Ken W. West, Xuan P. A. Gao

Abstract: A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction paramet… ▽ More A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction parameter $r_s$ (~20-30) in GaAs quantum wells. Instead of a sharp transition, increasing density (or lowering $r_s$) drives the RIP into a state where an incipient RIP coexists with the metallic 2D hole liquid. The non-trivial temperature dependent resistivity and the in-plane magnetic field induced enhancement of the RIP highlight the competition between two phases and the essential role of spin in this mixture phase, and are consistent with the Pomeranchuk effect in a mixture of Wigner crystal and Fermi liquid. △ Less

Submitted 24 December, 2020; originally announced December 2020.

Comments: arXiv admin note: text overlap with arXiv:1509.07463

A flux tunable superconducting quantum circuit based on Weyl semimetal MoTe2

Authors: K. L. Chiu, D. G. Qian, J. W. Qiu, W. Y. Liu, D. Tan, V. Mosallanejad, S. Liu, Z. T. Zhang, Y. Zhao, D. P. Yu

Abstract: Weyl semimetals for their exotic topological properties have drawn considerable attention in many research fields. When in combination with s-wave superconductors, the supercurrent can be carried by their topological surface channels, forming junctions mimic the behavior of Majorana bound states. Here, we present a transmon-like superconducting quantum intereference device (SQUID) consists of late… ▽ More Weyl semimetals for their exotic topological properties have drawn considerable attention in many research fields. When in combination with s-wave superconductors, the supercurrent can be carried by their topological surface channels, forming junctions mimic the behavior of Majorana bound states. Here, we present a transmon-like superconducting quantum intereference device (SQUID) consists of lateral junctions made of Weyl semimetal Td-MoTe2 and superconducting leads niobium nitride (NbN). The SQUID is coupled to a readout cavity made of molybdenum rhenium (MoRe), whose response at high power reveal the existence of the constituting Josephson junctions (JJs). The loop geometry of the circuit allows the resonant frequency of the readout cavity to be tuned by the magnetic flux. We demonstrate a JJ made of MoTe2 and a flux-tunable transmon-like circuit based on Weyl materials. Our study provides a platform to utilize topological materials in SQUID-based quantum circuits for potential applications in quantum information processing. △ Less

Submitted 27 October, 2020; originally announced October 2020.

Electrical properties of thermal oxide scales on pure iron in liquid lead-bismuth eutectic

Authors: Jie Qiu, Junsoo Han, Ryan Schoell, Miroslav Popovic, Elmira Ghanbari, Djamel Kaoumi, John R Scully, Digby D Macdonald, Peter Hosemann

Abstract: The impedance behavior of pre-oxidized iron in liquid lead-bismuth eutectic (LBE) at 200 oC is studied using electrochemical impedance spectroscopy. The structures and resistance of oxide grown on iron oxidized in air at different temperatures and durations are compared. The results show that the resistance of the oxide film increases with increasing oxidizing temperature, due to the formation of… ▽ More The impedance behavior of pre-oxidized iron in liquid lead-bismuth eutectic (LBE) at 200 oC is studied using electrochemical impedance spectroscopy. The structures and resistance of oxide grown on iron oxidized in air at different temperatures and durations are compared. The results show that the resistance of the oxide film increases with increasing oxidizing temperature, due to the formation of a thicker scale and fewer defects. At the same temperature (600 oC), increasing the oxidation time can also reduce the defect concentration in the oxide film and improve the impedance of the oxide scale in LBE. △ Less

Submitted 11 October, 2020; originally announced October 2020.

Fast gate-based readout of silicon quantum dots using Josephson parametric amplification

Authors: S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C. -M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-… ▽ More Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $μ$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed. △ Less

Submitted 23 July, 2019; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: Wrong figure reference corrected

Journal ref: Phys. Rev. Lett. 124, 067701 (2020)

Enhanced nonlinear interaction effects in a four-mode optomechanical ring

Authors: Li-**g **, **g Qiu, Stefano Chesi, Ying-Dan Wang

Abstract: With a perturbative treatment based on the Keldysh Green's function technique, we study the resonant enhancement of nonlinear interaction effects in a four-mode optomechanical ring. In such a system, we identify five distinct types of resonant scattering between unperturbed polariton modes, induced by the nonlinear optomechanical interaction. By computing the cavity density of states and optomecha… ▽ More With a perturbative treatment based on the Keldysh Green's function technique, we study the resonant enhancement of nonlinear interaction effects in a four-mode optomechanical ring. In such a system, we identify five distinct types of resonant scattering between unperturbed polariton modes, induced by the nonlinear optomechanical interaction. By computing the cavity density of states and optomechanical induced transparency signal, we find that the largest nonlinear effects are induced by a decay process involving the two phonon-like polaritons. In contrast to the conventional two-mode optomechanical system, our proposed system can exhibit prominent nonlinear features even in the regime when the single-photon coupling is much smaller than the cavity dam**. △ Less

Submitted 16 May, 2018; originally announced May 2018.

Comments: 16 pages, 11 figures, 1 table

Journal ref: Phys. Rev. A 98, 033836 (2018)

Dark State Polarizing a Nuclear Spin in the Vicinity of a Nitrogen-Vacancy Center

Authors: Yang-Yang Wang, **g Qiu, Ying-Qi Chu, Mei Zhang, Jianming Cai, Qing Ai, Fu-Guo Deng

Abstract: The nuclear spin in the vicinity of a nitrogen-vacancy (NV) center possesses of long coherence time and convenient manipulation assisted by the strong hyperfine interaction with the NV center. It is suggested for the subsequent quantum information storage and processing after appropriate initialization. However, current experimental schemes are either sensitive to the inclination and magnitude of… ▽ More The nuclear spin in the vicinity of a nitrogen-vacancy (NV) center possesses of long coherence time and convenient manipulation assisted by the strong hyperfine interaction with the NV center. It is suggested for the subsequent quantum information storage and processing after appropriate initialization. However, current experimental schemes are either sensitive to the inclination and magnitude of the magnetic field or require thousands of repetitions to achieve successful realization. Here, we propose polarizing a 13C nuclear spin in the vicinity of an NV center via a dark state. We demonstrate theoretically that it is robust to polarize various nuclear spins with different hyperfine couplings and noise strengths. △ Less

Submitted 28 August, 2017; v1 submitted 17 August, 2017; originally announced August 2017.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. A 97, 042313 (2018)

Exploiting ITO colloidal nanocrystals for ultrafast pulse generation

Authors: Qiangbing Guo, Yudong Cui, Yunhua Yao, Yuting Ye, Yue Yang, Xueming Liu, Shian Zhang, Xiaofeng Liu, Jianrong Qiu, Hideo Hosono

Abstract: Dynamical materials that capable of responding to optical stimuli have always been pursued for designing novel photonic devices and functionalities, of which the response speed and amplitude as well as integration adaptability and energy effectiveness are especially critical. Here we show ultrafast pulse generation by exploiting the ultrafast and sensitive nonlinear dynamical processes in tunably… ▽ More Dynamical materials that capable of responding to optical stimuli have always been pursued for designing novel photonic devices and functionalities, of which the response speed and amplitude as well as integration adaptability and energy effectiveness are especially critical. Here we show ultrafast pulse generation by exploiting the ultrafast and sensitive nonlinear dynamical processes in tunably solution-processed colloidal epsilon-near-zero (ENZ) transparent conducting oxide (TCO) nanocrystals (NCs), of which the potential respond response speed is >2 THz and modulation depth is ~23% pumped at ~0.7 mJ/cm2, benefiting from the highly confined geometry in addition to the ENZ enhancement effect. These ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices. △ Less

Submitted 5 February, 2017; v1 submitted 26 January, 2017; originally announced January 2017.

Journal ref: Advanced Materials 2017, 29 (27), 1700754

Sonication-assisted synthesis of semiconducting atomic crystals of germanium monoselenide: An isostructural and isoelectronic analog of black phosphorous

Authors: Yuting Ye, Qiangbing Guo, Xiaofeng Liu, Chang Liu, Junjie Wang, Yi Liu, Jianrong Qiu

Abstract: Monochalcogenides of germanium (or tin) are considered as stable isoelectronic and isostructural analogue of black phosphorous. Their two-dimensional (2D) forms have been just predicted to shown strong thickness-dependent physical properties, and even indirect to direct band gap crossover at the monolayer limit. Here, we demonstrate the synthesis of atomically thin GeSe by direct sonication-assist… ▽ More Monochalcogenides of germanium (or tin) are considered as stable isoelectronic and isostructural analogue of black phosphorous. Their two-dimensional (2D) forms have been just predicted to shown strong thickness-dependent physical properties, and even indirect to direct band gap crossover at the monolayer limit. Here, we demonstrate the synthesis of atomically thin GeSe by direct sonication-assisted exfoliation of bulk microcrystalline powders in solvents. The exfoliated few-layer GeSe sheets characterize high crystallinity with lateral sizes over 100 nm and, importantly, strong resistance against oxidation and degradation in ambient conditions. Density functional theory calculation combined with optical characterizations confirm the layer-number dependent optical bandgap, which, for few-layer sheets, is optimal for solar light harvesting, and promising for relevant applications, such as optoelectronics and photonics. △ Less

Submitted 6 February, 2017; v1 submitted 23 January, 2017; originally announced January 2017.

On the quantum spin Hall gap of monolayer 1T'-WTe2

Authors: Feipeng Zheng, Chaoyi Cai, Shaofeng Ge, Xuefeng Zhang, Xin Liu, Hong Lu, Yudao Zhang, Jun Qiu, Takashi Taniguchi, Kenji Watanabe, Shuang Jia, **gshan Qi, Jian-Hao Chen, Dong Sun, Ji Feng

Abstract: Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons can propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum c… ▽ More Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons can propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum computations. Presently, realization of such QSH-based devices are limited to complicated heterostructures. Monolayer 1T'-WTe2 was predicted to be semimetallic QSH materials, though with a negative band gap. The quasi-particle spectrum obtained using hybrid functional approach shows directly that the quantum spin Hall gap is positive for monolayer 1T'-WTe2. Optical measurement shows a systematic increase in the interband relaxation time with decreasing number of layers, whereas transport measurement reveals Schottcky barrier in ultrathin samples, which is absent for thicker samples. These three independent pieces of evidence indicate that monolayer 1T'-WTe2 is likely a truly 2-dimensional quantum spin Hall insulator. △ Less

Submitted 11 June, 2016; v1 submitted 16 May, 2016; originally announced May 2016.

Comments: 21 pages, 6 figures; Has been published online by Advanced Materials (2016)

Journal ref: Advanced Materials 28 (24), 4845-4851 (2016)

Evidence for a New Intermediate Phase in a Strongly Correlated 2D System near Wigner Crystallization

Authors: R. L. J. Qiu, N. J. Goble, A. Serafin, L. Yin, J. S. Xia, N. S. Sullivan, L. N. Pfeiffer, K. W. West, Xuan P. A. Gao

Abstract: How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insul… ▽ More How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insulating phase (RIP) which was interpreted as due to WC formation [Qiu et al, PRL 108, 106404 (2012)], in a strongly correlated 2D hole system with large interaction parameter $r_s$ ($\sim~$20-30) and high mobility. Instead of a sharp transition, we found that increasing density (or lowering $r_s$) drives the RIP into a state where the incipient RIP coexists with Fermi liquid. This apparent mixture phase intermediate between Fermi liquid and WC also exhibits a non-trivial temperature dependent resistivity behavior which may be qualitatively understood by the reversed melting of WC in the mixture, in analogy to the Pomeranchuk effect in the solid-liquid mixture of Helium-3. △ Less

Submitted 24 September, 2015; originally announced September 2015.

GHz Laser-free Time-resolved Transmission Electron Microscopy: a Stroboscopic High-duty-cycle Method

Authors: Jiaqi Qiu, Gwanghui Ha, Chunguang **g, Sergey V. Baryshev, Bryan W. Reed, Yimei Zhu, June W. Lau

Abstract: A device and a method for producing ultrashort electron pulses with GHz repetition rates via pulsing an input direct current (dc) electron beam are provided. The device and the method are based on an electromagnetic-mechanical pulser (EMMP) that consists of a series of transverse deflecting cavities and magnetic quadrupoles. The EMMP modulates and chops the incoming dc electron beam and converts i… ▽ More A device and a method for producing ultrashort electron pulses with GHz repetition rates via pulsing an input direct current (dc) electron beam are provided. The device and the method are based on an electromagnetic-mechanical pulser (EMMP) that consists of a series of transverse deflecting cavities and magnetic quadrupoles. The EMMP modulates and chops the incoming dc electron beam and converts it into pico- and sub-pico-second (100 fs to 10 ps) electron pulse sequences at >1 GHz repetition rates. Applying the EMMP to a transmission electron microscope (TEM) with any dc electron source, a GHz stroboscopic high-duty-cycle TEM can be realized. Unlike in many recent developments in time-resolved TEM that rely on a sample pum** laser paired with a laser launching electrons from a photocathode to probe the sample, there is no laser in the presented experimental set-up. This is expected to be a significant relief for electron microscopists who are not familiar with laser systems. The EMMP and the sample are externally driven by a radiofrequency (RF) source synchronized through a delay line. With no laser pum** the sample, the problem of the laser induced residual heating/damaging the sample is eliminated. As many RF-driven processes can be cycled indefinitely, sampling rates of 1-50 GHz become accessible. Such a GHz stroboscopic TEM would open up a new paradigm for in situ and in operando experiments to study samples externally driven electromagnetically. Complementary to the lower (MHz) repetition rates experiments enabled by laser photocathode TEM, new experiments in the high rep-rate multi-GHz regime will be enabled by the proposed RF design. In this article, we report an optimal design of the EMMP and an analytical generalized matrix approach in the thin lens approximation, along with detailed beam dynamics taking actual realistic dc beam parameters in a TEM operating at 200 keV. △ Less

Submitted 16 August, 2015; originally announced August 2015.

From Silicene to Half-Silicane by Hydrogenation

Authors: **glan Qiu, Huixia Fu, Yang Xu, Qing Zhou, Sheng Meng, Hui Li, Lan Chen, Kehui Wu

Abstract: Graphane is graphene fully hydrogenated from both sides, forming a 1x1 structure, where all C atoms are in sp3 configuration. In silicene, the Si atoms are in a mix-sp2/sp3 configuration, it is therefore natural to imagine silicane in analogue to graphane. However, monoatomic silicene sheet grown on substrates generally reconstructs into different phases, and only partially hydrogenated silicene w… ▽ More Graphane is graphene fully hydrogenated from both sides, forming a 1x1 structure, where all C atoms are in sp3 configuration. In silicene, the Si atoms are in a mix-sp2/sp3 configuration, it is therefore natural to imagine silicane in analogue to graphane. However, monoatomic silicene sheet grown on substrates generally reconstructs into different phases, and only partially hydrogenated silicene with reconstructions had been reported before. In this report we produce half-silicane, where one Si sublattice is fully H-saturated and the other sublattice is intact, forming a perfect 1x1 structure. By hydrogenating various silicene phases on Ag(111) substrate, we found that only the (2r3x2r3)R30° phase can produce half-silicane. Interestingly, this phase was previous considered to be a highly defective or incomplete silicene structure. Our results indicate that the structure of (2r3x2r3)R30° phase involves a complete silicene-1x1 lattice instead of defective fragments, and the formation mechanism of half-silicane was discussed with the help of first principles calculations. △ Less

Submitted 15 July, 2015; v1 submitted 6 June, 2015; originally announced June 2015.

Comments: We think more discusses about the adsorption mechanism are needed

Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation

Authors: Shaofeng Ge, Chaokai Li, Zhimin Zhang, Chenlong Zhang, Yudao Zhang, Jun Qiu, Qinsheng Wang, Junku Liu, Shuang Jia, Ji Feng, Dong Sun

Abstract: Black phosphorus has recently emerged as a promising material for high performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap and anisotropic electronic properties. Dynamical evolution of photo excited carriers and its induced change of transient electronic properties are critical for materials' high field performance, but remains to be explored for bl… ▽ More Black phosphorus has recently emerged as a promising material for high performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap and anisotropic electronic properties. Dynamical evolution of photo excited carriers and its induced change of transient electronic properties are critical for materials' high field performance, but remains to be explored for black phosphorus. In this work, we perform angle resolved transient reflection spectroscopy to study the dynamical evolution of anisotropic properties of black phosphorus under photo excitation. We find that the anisotropy of reflectivity is enhanced in the pump induced quasi-equilibrium state, suggesting an extraordinary enhancement of the anisotropy in dynamical conductivity in hot carrier dominated regime. These results raise enormous possibilities of creating high field, angle sensitive electronic, optoelectronic and remote sensing devices exploiting the dynamical electronic anisotropic with black phosphorus. △ Less

Submitted 29 March, 2015; originally announced March 2015.

Comments: 22 pages,10 figures

Variable Coupling Strength of Silicene on Ag(111)

Authors: Baojie Feng, Wenbin Li, **glan Qiu, Peng Cheng, Lan Chen, Kehui Wu

Abstract: We performed a scanning tunneling microscopy and spectroscopy (STM/STS) study on the electronic structures of of root(3)Xroot(3)-silicene on Ag(111). We find that the coupling strength of root(3)Xroot(3)-silicene with Ag(111) substrate is variable at different regions, giving rise to notable effects in experiments. These evidences of decoupling or variable interaction of silicene with the substrat… ▽ More We performed a scanning tunneling microscopy and spectroscopy (STM/STS) study on the electronic structures of of root(3)Xroot(3)-silicene on Ag(111). We find that the coupling strength of root(3)Xroot(3)-silicene with Ag(111) substrate is variable at different regions, giving rise to notable effects in experiments. These evidences of decoupling or variable interaction of silicene with the substrate are helpful to in-depth understanding of the structure and electronic properties of silicene. △ Less

Submitted 15 March, 2015; originally announced March 2015.

Comments: 10 pages, 4 figures

Journal ref: Chinese Physics Letters Vol. 32, No. 3 (2015) 037302

Ultrafast Terahertz Probe of Transient Evolution of Charged and Neutral Phase of Photoexcited Electron-hole Gas in Monolayer Semiconductor

Authors: Xuefeng Liu, Qingqing Ji, Zhihan Gao, Shaofeng Ge, Jun Qiu, Zhongfan Liu, Yanfeng Zhang, Dong Sun

Abstract: We investigate the dynamical formation of excitons from photoexcited electron-hole plasma and its subsequent decay dynamics in monolayer MoS2 grown by chemical vapor deposition using ultrafast pump and terahertz probe spectroscopy. Different photoexcited electron-hole states are resolved based on their distinct responses to THz photon and decay lifetime. The observed transient THz transmission can… ▽ More We investigate the dynamical formation of excitons from photoexcited electron-hole plasma and its subsequent decay dynamics in monolayer MoS2 grown by chemical vapor deposition using ultrafast pump and terahertz probe spectroscopy. Different photoexcited electron-hole states are resolved based on their distinct responses to THz photon and decay lifetime. The observed transient THz transmission can be fit with two decay components: a fast component with decay lifetime of 20 ps, which is attributed to exciton life time including the exciton formation and subsequent intraexciton relaxation; a slow component with extremely long decay lifetime of several ns due to either localized exciton state or a long live dark exciton state which is uncovered for the first time. The relaxation dynamics is further verified by temperature and pump fluence dependent studies of the decay time constants. △ Less

Submitted 10 October, 2014; originally announced October 2014.

Comments: 11 pages,4 figues

Persistent Dirac Fermion State on Bulk-like Si(111) Surface

Authors: Jian Chen, Wenbin Li, Baojie Feng, Peng Cheng, **glan Qiu, Lan Chen, Kehui Wu

Abstract: The "multilayer silicene" films were grown on Ag(111), with increasing thickness above 30 monolayers (ML). We found that the "multilayer silicene" is indeed a bulk Si(111) film. Such Si film on Ag(111) always exhibits a root(3)xroot(3) honeycomb superstructure on surface. Delocalized surface state as well as linear energy-momentum dispersion was revealed by quasiparticle interference patterns (QPI… ▽ More The "multilayer silicene" films were grown on Ag(111), with increasing thickness above 30 monolayers (ML). We found that the "multilayer silicene" is indeed a bulk Si(111) film. Such Si film on Ag(111) always exhibits a root(3)xroot(3) honeycomb superstructure on surface. Delocalized surface state as well as linear energy-momentum dispersion was revealed by quasiparticle interference patterns (QPI) on the surface, which proves the existence of Dirac fermions state. Our results indicate that bulk silicon with diamond structure can also host Dirac fermions, which makes the system even more attractive for further applications compared with monolayer silicene. △ Less

Submitted 29 May, 2014; originally announced May 2014.

Comments: 3 figures

Domain wall motions in perpendicularly magnetized CoFe/Pd multilayer nanowire

Authors: Zhaoliang Meng, Manoj Kumar, **jun Qiu, Guchang Han, Kie Leong Teo, Duc-The Ngo

Abstract: Current induced domain wall (DW) motion has been investigated in a 600-nm wide nanowire using multilayer film with a structure of Ta(5 nm)/Pd(5 nm)/[CoFe(0.4 nm)/Pd(1.2 nm)]$_{15}$/Ta(5 nm)in terms of anomalous Hall effect measurements. It is found that motion of DWs can be driven by a current density as low as 1.44$\times$10$^{11}$ A.m$^{-2}$. The effect of the Oersted field ($H_{Oe}$) and spin t… ▽ More Current induced domain wall (DW) motion has been investigated in a 600-nm wide nanowire using multilayer film with a structure of Ta(5 nm)/Pd(5 nm)/[CoFe(0.4 nm)/Pd(1.2 nm)]$_{15}$/Ta(5 nm)in terms of anomalous Hall effect measurements. It is found that motion of DWs can be driven by a current density as low as 1.44$\times$10$^{11}$ A.m$^{-2}$. The effect of the Oersted field ($H_{Oe}$) and spin transfer torque field ($H_{ST}$), which are considered as effective fields for DW motion, has been quantitatively separated from the dependence of depinning fields on the current. The results show that the motion of the walls was essentially dominated by the non-adiabaticity with a high non-adiabatic factor $β$ up to 0.4. △ Less

Submitted 28 May, 2014; originally announced May 2014.

Comments: 14 pages, 4 figures, original research article (Accepted for publication in Journal of Physics D: Applied Physics)

MSC Class: 81.15.Cd; 81.07.Gf; 85.70.Kh; 75.60.Ch; 75.70.Kw; 75.78.Fg

Journal ref: Journal of Physics D: Applied Physics 47, 345001 (2014)

Valley Carrier Dynamics in Monolayer Molybdenum Disulphide from Helicity Resolved Ultrafast Pump-probe Spectroscopy

Authors: Qinsheng Wang, Shaofeng Ge, Xiao Li, Jun Qiu, Yanxin Ji, Ji Feng, Dong Sun

Abstract: We investigate the valley related carrier dynamics in monolayer MoS2 using helicity resolved non-degenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Monolayer MoS2 shows remarkable transient reflection signals, in stark contrast to bilayer and bulk MoS2 due to the enhancement of many-body effect at reduced dimensionality. Th… ▽ More We investigate the valley related carrier dynamics in monolayer MoS2 using helicity resolved non-degenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Monolayer MoS2 shows remarkable transient reflection signals, in stark contrast to bilayer and bulk MoS2 due to the enhancement of many-body effect at reduced dimensionality. The helicity resolved ultrafast time-resolved result shows that the valley polarization is preserved for only several ps before scattering process makes it undistinguishable. We suggest that the dynamical degradation of valley polarization is attributable primarily to the exciton trap** by defect states in the exfoliated MoS2 samples. Our experiment and a tight-binding model analysis also show that the perfect valley CD selectivity is fairly robust against disorder at the K point, but quickly decays from the high-symmetry point in the momentum space in the presence of disorder. △ Less

Submitted 14 November, 2013; originally announced November 2013.

Comments: 15 pages,Accepted by ACS Nano

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Authors: Chee Huei Lee, Rui He, ZhenHua Wang, Richard L. J. Qiu, Ajay Kumar, Conor Delaney, Ben Beck, T. E. Kidd, C. C. Chancey, R. Mohan Sankaran, Xuan P. A. Gao

Abstract: Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3… ▽ More Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-do** level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled do** can be a tunable platform for fundamental studies and electronic applications of topological insulator systems. △ Less

Submitted 15 March, 2013; originally announced March 2013.

Comments: accepted for publication in Nanoscale. See http://gaogroup.case.edu/index.php/Publications for related papers from our lab

Journal ref: Nanoscale, 5, 4337-4343 (2013)

Ambipolar Surface Conduction in Ternary Topological Insulator Bi_2(Te_{1-x}Se_x)_3 Nanoribbons

Authors: ZhenHua Wang, Richard L. J. Qiu, Chee Huei Lee, ZhiDong Zhang, Xuan P. A. Gao

Abstract: We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with… ▽ More We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with x ~20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thickness around or larger than 100nm, indicating significantly enhanced contribution in transport from the gapless surface states. △ Less

Submitted 15 March, 2013; originally announced March 2013.

Comments: ACS Nano, in press. See http://gaogroup.case.edu/index.php/Publications for related papers from our lab

Journal ref: ACS Nano, 7, 2126-2131 (2013)

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Authors: Yuan Tian, Mohammed R. Sakr, Jesse M. Kinder, Dong Liang, Michael J. MacDonald, Richard L. J. Qiu, Hong-Jun Gao, Xuan P. A. Gao

Abstract: We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate… ▽ More We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate voltage shifts the chemical potential of electrons in InAs nanowire through quasi-one-dimensional (1D) sub-bands. This work experimentally shows the possibility to modulate semiconductor nanowire's thermoelectric properties through the peaked 1D electronic density of states in the diffusive transport regime, a long-sought goal in nanostructured thermoelectrics research. Moreover, we point out the importance of scattering (or disorder) induced energy level broadening in smearing out the 1D confinement enhanced thermoelectric power factor at practical temperatures (e.g. 300K). △ Less

Submitted 15 March, 2013; originally announced March 2013.

Journal ref: Nano Letters, 12, 6492 (2012)

Spontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene

Authors: Lan Chen, Hui Li, Baojie Feng, Zi**g Ding, **glan Qiu, Peng Cheng, Kehui Wu, Sheng Meng

Abstract: The (r3xr3)R30° honeycomb of silicene monolayer on Ag(111) was found to undergo a phase transition to two types of mirror-symmetric boundary-separated rhombic phases at temperatures below 40 K by scanning tunneling microscopy. The first-principles calculations reveal that weak interactions between silicene and Ag(111) drive the spontaneous ultra buckling in the monolayer silicene, forming two ener… ▽ More The (r3xr3)R30° honeycomb of silicene monolayer on Ag(111) was found to undergo a phase transition to two types of mirror-symmetric boundary-separated rhombic phases at temperatures below 40 K by scanning tunneling microscopy. The first-principles calculations reveal that weak interactions between silicene and Ag(111) drive the spontaneous ultra buckling in the monolayer silicene, forming two energy-degenerate and mirror-symmetric (r3xr3)R30° rhombic phases, in which the linear band dispersion near Dirac point (DP) and a significant gap opening (150 meV) at DP were induced. The low transition barrier between these two phases enables them interchangeable through dynamic flip-flop motion, resulting in the (r3xr3)R30° honeycomb structure observed at high temperature. △ Less

Submitted 15 December, 2012; originally announced December 2012.

Comments: 12 pages, 4 figures

Photoluminescence from Bi5(GaCl4)3 molecular crystal

Authors: Hong-Tao Sun, Beibei Xu, Tetsu Yonezawa, Yoshio Sakka, Naoto Shirahata, Minoru Fujii, Jianrong Qiu, Hong Gao

Abstract: Bi5(GaCl4)3 sample has been synthesized through the oxidation of Bi metal by gallium chloride (GaCl3) salt. Powder X-ray diffraction as well as micro-Raman scattering results revealed that, in addition to crystalline Bi5(GaCl4)3 in the product, amorphous phase containing [GaCl4]- and [Ga2Cl7]- units also exist. The thorough comparison of steady-state and time-resolved photoluminescent behaviors be… ▽ More Bi5(GaCl4)3 sample has been synthesized through the oxidation of Bi metal by gallium chloride (GaCl3) salt. Powder X-ray diffraction as well as micro-Raman scattering results revealed that, in addition to crystalline Bi5(GaCl4)3 in the product, amorphous phase containing [GaCl4]- and [Ga2Cl7]- units also exist. The thorough comparison of steady-state and time-resolved photoluminescent behaviors between Bi5(GaCl4)3 product and Bi5(AlCl4)3 crystal leads us to conclude that Bi53+ is the dominant emitter in the product, which gives rise to the ultrabroad emission ranging from 1 to 2.7 micrometer. Detailed quantum chemistry calculation helps us assign the observed excitations to some electronic transitions of Bi53+ polycation, especially at shorter wavelengths. It is believed that our work shown here not only is helpful to solve the confusions on the luminescent origin of bismuth in other material systems, but also serves to develop novel broadband tunable laser materials. △ Less

Submitted 6 September, 2012; v1 submitted 31 May, 2012; originally announced May 2012.

Journal ref: Dalton Transactions, 2012, 41, 11055 -11061

Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System

Authors: Richard L. J. Qiu, Xuan P. A. Gao, L. N. Pfeiffer, K. W. West

Abstract: We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and th… ▽ More We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and the zero field metallic state and is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density by transport and capacitance experiments, we show that the RIP is incompressible and continuously connected to the zero field insulator, suggesting a similar origin for these two phases. △ Less

Submitted 24 September, 2011; originally announced September 2011.

Comments: pdf with higher resolution figures and other related papers can be found at http://gaogroup.case.edu

Journal ref: Physical Review Letters, 108, 106404 (2012)

Degenerate versus semi-degenerate transport in a correlated 2D hole system

Authors: Richard L. J. Qiu, Xuan P. A. Gao, Loren N. Pfeiffer, Ken W. West

Abstract: It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear d… ▽ More It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear density ($p$) dependent conductivity, $σ\approx eμ^*(p-p_0)$, in both the degenerate (T<<T_F) and semi-degenerate (T T_F) regimes. The $T$-dependence of $σ(p)$ suggests that the metallic conduction (d$σ$/d$T<$0) at low $T$ is associated with the increase in $μ^*$, the effective mobility of itinerant carriers. However, the resistivity decrease in the semi-degenerate regime ($T>T_F$) is originated from the reduced $p_0$, the density of immobile carriers in a two-phase picture. △ Less

Submitted 25 April, 2011; originally announced April 2011.

Comments: accepted for publication in Phys. Rev. B

Journal ref: Physical Review B, 83, 193301 (2011)

Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Authors: Hao Tang, Dong Liang, Richard L. J. Qiu, Xuan P. A. Gao

Abstract: We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semicon… ▽ More We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications. △ Less

Submitted 1 August, 2011; v1 submitted 11 January, 2011; originally announced January 2011.

Comments: ACS Nano, in press

Journal ref: ACS Nano 5, 7510-7516 (2011)

Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Authors: Hao Tang, Dong Liang, Richard L. J. Qiu, Xuan P. A. Gao

Abstract: Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increa… ▽ More Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture. △ Less

Submitted 29 April, 2010; v1 submitted 31 March, 2010; originally announced March 2010.

Comments: comments are welcome

Journal ref: ACS Nano, 5, 7510-7516 (2011)

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

Authors: H. M. Wang, Z. Zheng, Y. Y. Wang, J. J. Qiu, Z. B. Guo, Z. X. Shen, T. Yu

Abstract: We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It… ▽ More We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage characteristics are governed by the space-charge-limited flow of current at low biases while the FN model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics. △ Less

Submitted 27 December, 2009; originally announced December 2009.

Comments: 12 pages,3 figures. to appear in APL

Journal ref: Appl. Phys. Lett. 96, 023106 (2010)

Giant spin-orbit splitting in a HgTe quantum well

Authors: Y. S. Gui, C. R. Becker, N. Dai, J. Liu, Z. J. Qiu, E. G. Novik, M. Schaefer, X. Z. Shu, J. H. Chu, H. Buhmann, L. W. Molenkamp

Abstract: We have investigated beating patterns in Shubnikov-de Haas oscillations for HgTe/Hg_{0.3}Cd_{0.7}Te(001) quantum wells with electron densities of 2 to 3 X 10^{12} cm^{-2}. Up to 12 beating nodes have been observed at magnetic fields between 0.9 and 6 T. Zero magnetic field spin-orbit splitting energies up to 30 meV have been directly determined from the node positions as well as from the interse… ▽ More We have investigated beating patterns in Shubnikov-de Haas oscillations for HgTe/Hg_{0.3}Cd_{0.7}Te(001) quantum wells with electron densities of 2 to 3 X 10^{12} cm^{-2}. Up to 12 beating nodes have been observed at magnetic fields between 0.9 and 6 T. Zero magnetic field spin-orbit splitting energies up to 30 meV have been directly determined from the node positions as well as from the intersection of self-consistently calculated Landau levels. These values, which exceed the thermal broadening of Landau levels, k_B T, at room temperature, are in good agreement with Rashba spin-orbit splitting energies calculated by means of an 8 X 8 kp Kane model. The experimental Shubnikov-de Haas oscillations are also in good agreement with numerical simulations based on this model. △ Less

Submitted 22 June, 2004; originally announced June 2004.

Comments: 5 pages, 6 figures